CN110922959A - Quantum dot film and preparation method thereof - Google Patents
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 134
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000004005 microsphere Substances 0.000 claims abstract description 26
- 229920000620 organic polymer Polymers 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 14
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000007062 hydrolysis Effects 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- -1 polydimethylsiloxane Polymers 0.000 claims description 3
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 2
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 49
- 239000000126 substance Substances 0.000 abstract description 3
- 239000012788 optical film Substances 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 27
- 239000010409 thin film Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000005642 Oleic acid Substances 0.000 description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000012296 anti-solvent Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WLZGEDNSZCPRCJ-UHFFFAOYSA-M cesium;octadecanoate Chemical compound [Cs+].CCCCCCCCCCCCCCCCCC([O-])=O WLZGEDNSZCPRCJ-UHFFFAOYSA-M 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229940038384 octadecane Drugs 0.000 description 1
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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Abstract
本发明属于光学膜和封装领域，并具体公开了一种量子点薄膜及其制备方法，包括如下步骤：S1对量子点进行包覆得到量子点微球；S2将量子点微球混合在有机聚合物溶液中并固化成形，得到初始量子点薄膜；S3在初始量子点薄膜表面沉积氧化物层，得到量子点薄膜，完成量子点薄膜制备。本发明采用有机或无机物、有机聚合物、氧化物对量子点进行了三重包覆，制备得到的量子点薄膜均匀性好，且有效提高了量子点的稳定性，提高量子点的使用寿命。
The invention belongs to the field of optical films and packaging, and specifically discloses a quantum dot film and a preparation method thereof, comprising the following steps: S1, coating the quantum dots to obtain quantum dot microspheres; S2, mixing the quantum dot microspheres in an organic polymer S3, depositing an oxide layer on the surface of the initial quantum dot film to obtain a quantum dot film, and completing the preparation of the quantum dot film. In the invention, the quantum dots are triple-coated with organic or inorganic substances, organic polymers and oxides.
Description
Technical Field
The invention belongs to the field of optical films and packaging, and particularly relates to a quantum dot film and a preparation method thereof.
Background
Quantum dots are semiconductor nanocrystals that have received much attention due to their superior optoelectronic properties. The quantum dots have wide color gamut, high color purity and adjustable light-emitting wavelength, are ideal display materials, but are sensitive to water, oxygen, light, heat and the like, are easy to lose efficacy when exposed to natural environment, cannot be used independently and need to be coated and packaged.
Quantum dot electroluminescent devices have not been put into actual production really, but a quantum dot backlight display technology based on a photoluminescence principle appears in the market, and in the quantum dot backlight display technology, the problems of stability of a quantum dot film layer and thickness of a thin film are important points of concern.
Some studies on quantum dots have been made, such as patent CN108089369A, to provide a quantum dot film in which the size of a light scattering agent contained in a light conversion layer is adjusted, which improves color reproducibility and brightness of light emitted through the quantum dot film; patent CN107658385B provides a method for preparing quantum dot thin film, which is to add a flocculant into a ligand-modified quantum dot solution to prepare quantum dot ink, to form a compact quantum dot film layer without an insulating ligand, to eliminate the influence of the ligand on the photoelectric properties of the quantum dot thin film, and to improve the performance of the quantum dot light emitting diode. However, the above patent does not pay attention to the problem of how to further improve the stability of the quantum dots.
Disclosure of Invention
In view of the above defects or improvement requirements of the prior art, the present invention provides a quantum dot thin film and a preparation method thereof, and aims to effectively improve the stability of quantum dots and prolong the service life of quantum dots by triple coating of quantum dots with an organic or inorganic substance, an organic polymer and an oxide.
In order to achieve the above object, according to an aspect of the present invention, there is provided a method for preparing a quantum dot thin film, including the steps of:
s1, coating the quantum dots to obtain quantum dot microspheres;
s2, mixing the quantum dot microspheres in an organic polymer solution, and curing and forming to obtain an initial quantum dot film;
s3, depositing an oxide layer on the surface of the initial quantum dot film to obtain the quantum dot film, and finishing the preparation of the quantum dot film.
Further preferably, the quantum dots are coated with silica, cage polysilsesquioxane or inorganic salt.
Further preferably, the quantum dots are coated with silica produced by hydrolysis of tetramethoxysilane.
More preferably, the organic polymer solution is obtained by dissolving an organic polymer in toluene or chloroform.
More preferably, when the quantum dot microspheres are mixed in the organic polymer solution, the volume ratio of the quantum dot microspheres to the organic polymer is 1: 1-1: 3.
Further preferably, the organic polymer is polymethyl methacrylate or polydimethylsiloxane.
More preferably, the oxide layer is preferably an aluminum oxide layer.
As a further preferred, an oxide layer is deposited on the surface of the initial quantum dot thin film by using an atomic layer deposition method.
Further preferably, when the oxide layer is deposited on the surface of the initial quantum dot thin film, the deposition temperature is 30 ℃ to 50 ℃.
According to another aspect of the present invention, there is provided a quantum dot thin film, which is prepared by the above method.
Generally, compared with the prior art, the above technical solution conceived by the present invention mainly has the following technical advantages:
1. according to the preparation method of the quantum dot film, the quantum dots are coated by the organic or inorganic substance, the organic polymer and the oxide in a triple mode, so that the stability of the quantum dots is effectively improved, and the service life of the quantum dots is prolonged.
2. According to the invention, silicon dioxide generated by hydrolysis of tetramethoxysilane is adopted to coat the quantum dots, the hydrolysis rate of tetramethoxysilane is high, and the stability is good after coating is completed.
3. According to the preparation method of the quantum dot film, the quantum dot microspheres are uniformly dispersed in the organic polymer solution, so that the prepared quantum dot film is good in uniformity, the thickness of the film is easy to control, and meanwhile, the light transmittance of the quantum dot film is ensured by controlling the proportion of the quantum dot microspheres to the organic polymer.
4. According to the invention, the nano-scale oxide layer is deposited on the surface of the initial quantum dot film by adopting an atomic layer deposition technology, the film is completely coated, the water and oxygen barrier property of the quantum dot film is further improved, the deposition temperature is controlled to be 30-50 ℃, the quantum dot structure cannot be damaged due to high temperature, and the luminous property of the quantum dot film is ensured.
Drawings
Fig. 1 is a schematic view of a quantum dot thin film prepared according to an embodiment of the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: 1-quantum dot microspheres, 2-oxide layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The preparation method of the quantum dot film provided by the embodiment of the invention comprises the following steps:
s1 quantum dots are obtained by adopting a hot injection or room temperature synthesis mode, and are dissolved in toluene, Tetramethoxysilane (TMOS) or Tetraethoxysilane (TEOS) is injected into the toluene by an injector under the condition of rapid stirring, and the mixture is fully stirred, so that silicon dioxide generated by hydrolysis of the mixture coats the quantum dots to form quantum dot microspheres 1, and quantum dot microsphere solution is obtained;
s2, mixing the quantum dot microsphere solution with the organic polymer solution, fully stirring to uniformly disperse the quantum dot microspheres 1 in the organic polymer solution to obtain a mixture, then injecting the mixture onto a clean glass sheet, and placing the glass sheet in a vacuum drying oven to solidify the glass sheet into a film to obtain an initial quantum dot film;
s3 depositing an oxide layer 2 on the surface of the initial quantum dot film by a low temperature atomic layer deposition method, specifically, placing the initial quantum dot film in an atomic layer deposition cavity, where the atomic layer deposition cavity is hollow and rotatable, so that each surface of the initial quantum dot film is completely coated with an oxide by the deposited oxide, and obtaining the quantum dot film, as shown in fig. 1, completing the preparation of the quantum dot film.
Further, the organic polymer solution is obtained by dissolving an organic polymer in toluene or chloroform, wherein the organic polymer is preferably polymethyl methacrylate (PMMA) or Polydimethylsiloxane (PDMS); specifically, the thickness of the initial quantum dot film is controlled by controlling the amount of the mixture injected onto the glass sheet, and the light transmittance of the film is controlled by the volume ratio of the quantum dot microspheres 1 to the organic polymer in the mixture, wherein the ratio is preferably 1: 1-1: 3, and more preferably 1: 2.
Further, the thickness of the deposited oxide layer 2 can be controlled by changing the cycle number of the low-temperature atomic layer deposition, wherein the oxide layer 2 is preferably an aluminum oxide layer; the deposition temperature when the oxide layer 2 is deposited on the surface of the initial quantum dot thin film is 30 to 50 ℃, and more preferably 40 ℃.
The following are specific examples:
example 1
Adopting green light CsPbBr3The quantum dot film is prepared from (green perovskite) quantum dots, wherein the particle size of the quantum dots is less than 10nm, an emission peak is positioned at 508nm, and an organic ligand exists on the surface of the quantum dots, and the preparation method specifically comprises the following steps:
s1 preparation of quantum dots: mixing cesium stearate with octadecane and oleic acid, and heating and dissolving at 100 ℃ to obtain a Cs precursor for later use; adding lead bromide, oleic acid, oleylamine and octadecene into a four-neck flask, heating to 100 ℃ under vacuum, carrying out magnetic stirring at the speed of 700r/min while heating, keeping the temperature at 100 ℃ and continuously heating for 30min, then gradually heating to 155 ℃ under the nitrogen atmosphere, quickly injecting the prepared Cs precursor into the flask, staying for about 3s, and putting the flask into an ice-water bath for cooling; cooling to 25 ℃, taking out and placing into a centrifuge tube, adding ethyl acetate as an anti-solvent according to the proportion of 2:1, then centrifuging at 7000r/min for 10min, pouring out supernatant, and dissolving the precipitate with toluene to obtain a quantum dot solution;
s2, preparing quantum dot microspheres: putting the quantum dot solution into a flask, quickly injecting TMOS at the rotating speed of 1500r/min, and then fully stirring at room temperature for 20 hours to obtain a quantum dot microsphere solution;
s3 preparation of initial quantum dot thin film: adding PMMA into toluene, dissolving at 80 ℃, heating while stirring at a stirring speed of 1500r/min until PMMA is completely dissolved; after cooling the PMMA and toluene solution to room temperature, mixing the quantum dot microsphere solution with the PMMA and toluene solution in a ratio of 1:2, and fully stirring to uniformly disperse the quantum dot microspheres in the PMMA and toluene solution to obtain a mixture; then, injecting the mixture into a clean glass sheet, and placing the glass sheet in a vacuum drying oven to cure the wet film to obtain an initial quantum dot film;
s4 preparation of quantum dot film: and after the pulse is adjusted, placing the initial quantum dot film in a hollowed deposition cavity, and depositing an aluminum oxide layer on the surface of the initial quantum dot film to finish the preparation of the quantum dot film, wherein the emission peak of the quantum dot film is positioned at 520 nm.
Example 2
Synthesis of CsPbBr at room temperature3The quantum dot film is prepared from (green perovskite) quantum dots, wherein the particle size of the quantum dots is less than 10nm, an emission peak is positioned at 518nm, and an organic ligand exists on the surface of the quantum dots, and the preparation method specifically comprises the following steps:
s1 preparation of quantum dots: reacting CsBr, PbBr2Oleic acid and oleylamine are added into N, N-Dimethylformamide (DMF), the mixed solution is magnetically stirred for 2 hours at the temperature of 90 ℃ to obtain a clear solution, and then the clear solution is taken and rapidly injected into toluene to obtain green light quantum dots;
s2, preparing quantum dot microspheres: putting the quantum dot solution into a flask, quickly injecting TMOS at the rotating speed of 1500r/min, and then fully stirring at room temperature for 20 hours to obtain a quantum dot microsphere solution;
s3 preparation of initial quantum dot thin film: adding PMMA into toluene, dissolving at 80 ℃, heating while stirring at a stirring speed of 1500r/min until PMMA is completely dissolved; after cooling the PMMA and toluene solution to room temperature, mixing the quantum dot microsphere solution with the PMMA and toluene solution in a ratio of 1:1, and fully stirring to uniformly disperse the quantum dot microspheres in the PMMA and toluene solution to obtain a mixture; then, injecting the mixture into a clean glass sheet, and placing the glass sheet in a vacuum drying oven to cure the wet film to obtain an initial quantum dot film;
s4 preparation of quantum dot film: after the pulse is adjusted, the initial quantum dot film is placed in a hollowed deposition cavity, the temperature is controlled to be 50 ℃, an aluminum oxide layer is deposited on the surface of the initial quantum dot film, the preparation of the quantum dot film is completed, and the emission peak of the quantum dot film is located at the position of 525 nm.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A preparation method of a quantum dot film is characterized by comprising the following steps:
s1, coating the quantum dots to obtain quantum dot microspheres (1);
s2, mixing the quantum dot microspheres (1) in an organic polymer solution, and curing and forming to obtain an initial quantum dot film;
s3, depositing an oxide layer (2) on the surface of the initial quantum dot film to obtain the quantum dot film, and finishing the preparation of the quantum dot film.
2. The method of claim 1, wherein the quantum dots are coated with silica, cage polysilsesquioxane, or inorganic salt.
3. The method of claim 2, wherein the quantum dots are coated with silica produced by hydrolysis of tetramethoxysilane.
4. The method for preparing a quantum dot film according to claim 1, wherein the organic polymer solution is obtained by dissolving an organic polymer in toluene or chloroform.
5. The preparation method of the quantum dot film as claimed in claim 4, wherein when the quantum dot microspheres (1) are mixed in the organic polymer solution, the volume ratio of the quantum dot microspheres (1) to the organic polymer is 1: 1-1: 3.
6. The method of claim 4, wherein the organic polymer is polymethyl methacrylate or polydimethylsiloxane.
7. The method for preparing a quantum dot film according to claim 1, wherein the oxide layer (2) is preferably an aluminum oxide layer.
8. The method for preparing a quantum dot film according to claim 1, wherein an oxide layer (2) is deposited on the surface of the initial quantum dot film by using an atomic layer deposition method.
9. The method for preparing a quantum dot film according to claim 8, wherein the deposition temperature is 30 ℃ to 50 ℃ when the oxide layer (2) is deposited on the surface of the initial quantum dot film.
10. A quantum dot film, prepared by the method of any one of claims 1 to 9.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111793495A (en) * | 2020-06-29 | 2020-10-20 | 南京理工大学 | A method to enhance the performance of CsPbI3 quantum dot LEDs by chlorine doping |
| CN112608403A (en) * | 2020-11-20 | 2021-04-06 | 西安交通大学 | Preparation method and application of high-stability polymer microsphere @ all-inorganic lead-halogen perovskite quantum dot |
| CN113956867A (en) * | 2021-10-11 | 2022-01-21 | 佛山安亿纳米材料有限公司 | Quantum dot composite light conversion material and preparation method thereof |
| CN115247060A (en) * | 2022-07-29 | 2022-10-28 | 厦门大学 | Quantum dot light-emitting film, preparation and application thereof in white light Mini-LED device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105779968A (en) * | 2016-03-16 | 2016-07-20 | 华中科技大学 | Preparation method of quantum dot film |
| CN109796714A (en) * | 2017-11-17 | 2019-05-24 | Tcl集团股份有限公司 | A kind of polymer material and its preparation method and application |
-
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- 2019-11-08 CN CN201911086601.8A patent/CN110922959B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105779968A (en) * | 2016-03-16 | 2016-07-20 | 华中科技大学 | Preparation method of quantum dot film |
| CN109796714A (en) * | 2017-11-17 | 2019-05-24 | Tcl集团股份有限公司 | A kind of polymer material and its preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| XIANG QINYONG等: "Bottom up Stabilization of CsPbBr3 Quantum Dots-Silica Sphere with Selective Surface Passivation via Atomic Layer Deposition", 《CHEMISTRY OF MATERIALS》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111793495A (en) * | 2020-06-29 | 2020-10-20 | 南京理工大学 | A method to enhance the performance of CsPbI3 quantum dot LEDs by chlorine doping |
| CN112608403A (en) * | 2020-11-20 | 2021-04-06 | 西安交通大学 | Preparation method and application of high-stability polymer microsphere @ all-inorganic lead-halogen perovskite quantum dot |
| CN112608403B (en) * | 2020-11-20 | 2022-02-22 | 西安交通大学 | Preparation method and application of high-stability polymer microsphere @ all-inorganic lead-halogen perovskite quantum dot |
| CN113956867A (en) * | 2021-10-11 | 2022-01-21 | 佛山安亿纳米材料有限公司 | Quantum dot composite light conversion material and preparation method thereof |
| CN115247060A (en) * | 2022-07-29 | 2022-10-28 | 厦门大学 | Quantum dot light-emitting film, preparation and application thereof in white light Mini-LED device |
| CN115247060B (en) * | 2022-07-29 | 2024-06-04 | 厦门大学 | Quantum dot luminescent film, preparation and application thereof in white light Mini-LED device |
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