CN110911511A - 一种高利用率的柔性薄膜太阳能电池 - Google Patents

一种高利用率的柔性薄膜太阳能电池 Download PDF

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CN110911511A
CN110911511A CN201911123040.4A CN201911123040A CN110911511A CN 110911511 A CN110911511 A CN 110911511A CN 201911123040 A CN201911123040 A CN 201911123040A CN 110911511 A CN110911511 A CN 110911511A
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马立云
姚婷婷
李刚
沈洪雪
彭赛奥
金克武
王天齐
杨扬
甘治平
彭寿
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • HELECTRICITY
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    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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Abstract

本发明公开一种高利用率的柔性薄膜太阳能电池,包括柔性基底,柔性基底顶面由下至上依次层叠有前电极、缓冲层、吸收层、背接触层与保护层,吸收层为CdTe薄膜;前电极包含由下至上依次层叠的下阻隔层、透明导电层与上阻隔层;透明导电层的顶面呈凹凸的绒面结构;下阻隔层的厚度为20~80nm、透明导电层的厚度为600~1000nm、上阻隔层的厚度为15~60nm;缓冲层的厚度为40~120nm;吸收层的厚度为1500~2500nm;背接触层的厚度为5~30nm;保护层的厚度为10~40nm;该薄膜太阳能电池能够提高对太阳能的吸收率,增强薄膜太阳能电池的整体性能。

Description

一种高利用率的柔性薄膜太阳能电池
技术领域
本发明涉及薄膜太阳能电池技术领域,具体是一种高利用率的柔性薄膜太阳能电池。
背景技术
目前,薄膜太阳能电池作为一种高效能源产品正迅速发展,由于其重量相对更轻、外表光滑且制造成本相对较低,已成为国际光伏市场发展的新热点、新趋势。
现阶段,可以大规模产业化生产的薄膜太阳能电池主要有3种:硅基薄膜太阳能电池、铜铟镓硒(CIGS)薄膜太阳能电池和碲化镉(CdTe)薄膜太阳能电池。其中,碲化镉薄膜太阳能电池结构相对最简单,可以容易制备单相CdTe晶体薄膜且制备方法较多。薄膜太阳能电池多数为玻璃基底,柔性薄膜太阳能电池刚刚开始,由于其质量轻,可折叠,可弯曲,便于携带,有利于实现大规模生产,且显著的降低成本,可大量应用于便携式应急充电背包,光伏帐篷,光伏窗帘,光伏屋顶,太阳能汽车等具有广阔的应用空间,研发柔性薄膜太阳能电池有利于我国光伏产业的持续健康发展。
但是,常规的碲化镉薄膜太阳能电池的吸收率不高,利用率低,制约了薄膜太阳能电池的发展。
发明内容
本发明的目的在于提供一种高利用率的柔性薄膜太阳能电池,该薄膜太阳能电池能够提高对太阳能的吸收率,即提高利用率,增强薄膜太阳能电池的整体性能。
本发明解决其技术问题所采用的技术方案是:
一种高利用率的柔性薄膜太阳能电池,包括柔性基底,柔性基底顶面由下至上依次层叠有前电极、缓冲层、吸收层、背接触层与保护层,吸收层为CdTe薄膜;所述前电极包含由下至上依次层叠的下阻隔层、透明导电层与上阻隔层;所述透明导电层的顶面呈凹凸的绒面结构;所述下阻隔层为TiO2、ZnO、Al2O3、SnO或In2O3薄膜;所述透明导电层为BZO、AZO、GZO、IGZO或ITO薄膜;所述上阻隔层为TiO2、ZnO、Al2O3、SnO或In2O3薄膜;
所述下阻隔层的厚度为20~80nm、透明导电层的厚度为600~1000nm、上阻隔层的厚度为15~60nm;
所述缓冲层的厚度为40~120nm;吸收层的厚度为1500~2500nm;背接触层的厚度为5~30nm;保护层的厚度为10~40nm。
进一步的,所述柔性基底采用聚合物基板或金属柔性基板。
进一步的,所述缓冲层为CdS、ZnS或InS薄膜。
进一步的,所述背接触层为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。
进一步的,所述保护层为Au、Zn、Pt、Zr或Ti薄膜。
进一步的,所述聚合物基板采用聚酰亚胺或聚苯并咪唑。
进一步的,所述金属柔性基板采用铁镍合金、不锈钢、铝箔、钛箔、钼箔或铜箔。
本发明的有益效果是:
一、采用聚合物基板或金属柔性基板作为柔性基底,质量轻、可折叠、可弯曲,便于携带,因此可以采用环绕式溅射沉积,有利于实现大规模生产,且显著的降低成本。
二、前电极采用多层膜的复合结构,下阻隔层可以有效防止薄膜太阳能电池漏电,增加前电极的透过率,并且能够阻隔来自衬底的污染、避免影响透明导电层的透光率和导电性能。
三、透明导电层的凹凸绒面结构能够减少前电极的反射率,进而有效增加前电极的透光率,增强太阳能电池吸收层对太阳光的吸收,提高光能利用率;并且透明导电层可采用不同的薄膜,可根据吸收层和缓冲层的材料来调整透明导电层的材料与制备方法,进而实现优良的光电性能及降低成本。
四、上阻隔层可以作为前电极与缓冲层的中间缓冲,减少前电极与缓冲层的界面态,增加前电极的透过率,有效防止吸收层中的元素向透明导电层扩散,并且能够阻隔来自衬底的污染、避免影响透明导电层的透光率和导电性能。
五、缓冲层采用CdS、ZnS或InS薄膜,使晶格常数介于前电极和吸收层中间,减少前电极和吸收层的界面态。
六、背接触层采用Cu、Zn、Mo、Ti、Al、Ag或Au薄膜,可与吸收层形成良好的欧姆接触并减少载流子界面复合。
七、保护层采用Au、Zn、Pt、Zr或Ti薄膜,保护太阳能电池不被酸碱腐蚀降低光电转换效率或发生漏电,提高电池的耐候性及使用寿命。
附图说明
下面结合附图和实施例对本发明进一步说明:
图1是本发明的结构示意图;
图2是本发明前电极的表面形貌图。
具体实施方式
如图1所示,本发明提供一种高利用率的柔性薄膜太阳能电池,包括柔性基底1,柔性基底1顶面由下至上依次层叠有前电极2、缓冲层3、吸收层4、背接触层5与保护层6,吸收层4为CdTe薄膜;结合图2所示,所述前电极2包含由下至上依次层叠的下阻隔层21、透明导电层22与上阻隔层23;所述透明导电层22的顶面呈凹凸的绒面结构;所述下阻隔层21为TiO2、ZnO、Al2O3、SnO或In2O3薄膜;所述透明导电层22为BZO、AZO、GZO、IGZO或ITO薄膜;所述上阻隔层23为TiO2、ZnO、Al2O3、SnO或In2O3薄膜;
所述下阻隔层21的厚度为20~80nm、透明导电层22的厚度为600~1000nm、上阻隔层23的厚度为15~60nm;
所述缓冲层3的厚度为40~120nm;吸收层4的厚度为1500~2500nm;背接触层5的厚度为5~30nm;保护层6的厚度为10~40nm。
作为优选的,柔性基底1采用聚合物基板或金属柔性基板,聚合物基板采用聚酰亚胺或聚苯并咪唑,金属柔性基板采用铁镍合金、不锈钢、铝箔、钛箔、钼箔或铜箔。缓冲层3为CdS、ZnS或InS薄膜。背接触层5为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。保护层6为Au、Zn、Pt、Zr或Ti薄膜。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制;任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰,均仍属于本发明技术方案保护的范围内。

Claims (7)

1.一种高利用率的柔性薄膜太阳能电池,包括柔性基底,柔性基底顶面由下至上依次层叠有前电极、缓冲层、吸收层、背接触层与保护层,吸收层为CdTe薄膜,其特征在于,所述前电极包含由下至上依次层叠的下阻隔层、透明导电层与上阻隔层;所述透明导电层的顶面呈凹凸的绒面结构;所述下阻隔层为TiO2、ZnO、Al2O3、SnO或In2O3薄膜;所述透明导电层为BZO、AZO、GZO、IGZO或ITO薄膜;所述上阻隔层为TiO2、ZnO、Al2O3、SnO或In2O3薄膜;
所述下阻隔层的厚度为20~80nm、透明导电层的厚度为600~1000nm、上阻隔层的厚度为15~60nm;
所述缓冲层的厚度为40~120nm;吸收层的厚度为1500~2500nm;背接触层的厚度为5~30nm;保护层的厚度为10~40nm。
2.根据权利要求1所述的一种高利用率的柔性薄膜太阳能电池,其特征在于,所述柔性基底采用聚合物基板或金属柔性基板。
3.根据权利要求1或2所述的一种高利用率的柔性薄膜太阳能电池,其特征在于,所述缓冲层为CdS、ZnS或InS薄膜。
4.根据权利要求1或2所述的一种高利用率的柔性薄膜太阳能电池,其特征在于,所述背接触层为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。
5.根据权利要求1或2所述的一种高利用率的柔性薄膜太阳能电池,其特征在于,所述保护层为Au、Zn、Pt、Zr或Ti薄膜。
6.根据权利要求2所述的一种高利用率的柔性薄膜太阳能电池,其特征在于,所述聚合物基板采用聚酰亚胺或聚苯并咪唑。
7.根据权利要求2所述的一种高利用率的柔性薄膜太阳能电池,其特征在于,所述金属柔性基板采用铁镍合金、不锈钢、铝箔、钛箔、钼箔或铜箔。
CN201911123040.4A 2019-11-16 2019-11-16 一种高利用率的柔性薄膜太阳能电池 Pending CN110911511A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114050191A (zh) * 2021-11-24 2022-02-15 中建材蚌埠玻璃工业设计研究院有限公司 一种柔性碲化镉薄膜太阳能电池结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114050191A (zh) * 2021-11-24 2022-02-15 中建材蚌埠玻璃工业设计研究院有限公司 一种柔性碲化镉薄膜太阳能电池结构

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