CN110911325A - Wafer conveying blade - Google Patents

Wafer conveying blade Download PDF

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Publication number
CN110911325A
CN110911325A CN201911206763.0A CN201911206763A CN110911325A CN 110911325 A CN110911325 A CN 110911325A CN 201911206763 A CN201911206763 A CN 201911206763A CN 110911325 A CN110911325 A CN 110911325A
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Prior art keywords
branch
wafer
leg
transfer blade
base
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CN201911206763.0A
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CN110911325B (en
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刘凯
金柱炫
俎世琦
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Xian Eswin Silicon Wafer Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to a wafer transfer blade, comprising: the first branch extends from a first position of the base part to a first direction far away from the base part; the second branch extends from the second position of the base part to a second direction far away from the base part, and the extending end of the first branch is intersected with the extending end of the second branch; the first direction is different from the second direction; the third branch extends from the intersection of the second branch and the first branch to a third direction away from the base; the fourth branch extends from the intersection of the second branch and the first branch in a fourth direction away from the base. This wafer transfer blade can make transfer blade and the minimum region of wafer bending deformation degree contact for the great region of wafer bending deformation degree is in unsettled state, has reduced the wafer when taking place bending deformation and transfer blade area of contact, thereby reduces the production of the granule on wafer surface and mar, has increased substantially the yields of wafer.

Description

Wafer conveying blade
Technical Field
The invention belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a wafer conveying blade.
Background
In the manufacturing process of semiconductor devices, semiconductor wafers are carried in/out of various process chambers. Since manufacturing a semiconductor device requires various processes to be performed on a semiconductor wafer in a plurality of processing chambers, transfer/pickup of the semiconductor wafer in each processing chamber needs to be performed by a dedicated wafer transfer apparatus.
During the epitaxial production process, the (100) plane silicon wafer 1 is vapor-phase grown in the epitaxial process chamber. Referring to fig. 1, fig. 1 is a schematic structural diagram of an epitaxial growth process chamber provided in the prior art; in fig. 1, the groove direction of the (100) plane silicon wafer 1 adopts a <010> crystal orientation, and the base 2 provides a supporting function for the growth process of the silicon wafer 1; the top bell jar 3 and the bottom bell jar 4 provide a proper closed environment for the growth of the silicon wafer 1; the wafer lift pins 5 are capable of placing the silicon wafer 1 from the transfer blade onto the susceptor 2; the lamp module 6 is a heating device for silicon wafer growth. The shape of the conventional transfer blade 7 generally adopts a trapezoidal design, please refer to fig. 2, fig. 2 is a schematic structural diagram of a trapezoidal transfer blade for transferring a wafer provided in the prior art; in fig. 2, the conveying direction (arrow direction) of the conveying blade 7 coincides with the groove direction <010>, the hatched portion is a contact area of the silicon wafer 1 and the conveying blade 7, and a portion of the silicon wafer 1 not contacting the conveying blade 7 is in a floating state.
However, when the silicon wafer 1 is transferred to the process chamber along with the transfer blade 7, the silicon wafer 1 is transferred from a space having a low temperature to the process chamber having a high temperature, and a sudden temperature rise may cause thermal deformation of the silicon wafer 1, resulting in a bowing phenomenon. When the silicon wafer 1 is bent, the surface of the transfer blade 7 moves and the silicon wafer 1 rubs against the transfer blade 7, so that many particles and scratches are generated on the surface of the silicon wafer 1, and the yield of the silicon wafer 1 is reduced.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a wafer transfer blade. The technical problem to be solved by the invention is realized by the following technical scheme:
an embodiment of the present invention provides a wafer transfer blade, including: a base, a first branch, a second branch, a third branch, and a fourth branch, wherein,
the first branch extends from a first location of the base portion to a first direction away from the base portion;
the second branch extends from the second position of the base part to a second direction far away from the base part, and the extending end of the first branch is intersected with the extending end of the second branch;
the first direction is different from the second direction;
the third branch extends from an intersection of the first branch and the second branch in a third direction away from the base;
the fourth branch extends from an intersection of the first branch and the second branch in a fourth direction away from the base.
In one embodiment of the invention, the first branch and the second branch are symmetrically distributed along an axis of symmetry of the base.
In one embodiment of the invention, the third branch and the fourth branch are symmetrically distributed along the symmetry axis of the base.
In one embodiment of the invention, the third branch extends from the intersection of the second branch and the first branch in the second direction, and the fourth branch extends from the intersection of the second branch and the first branch in the first direction.
In one embodiment of the present invention, the width between the inner edge and the outer edge of the first branch gradually increases along the extending direction thereof, the width between the inner edge and the outer edge of the second branch gradually increases along the extending direction thereof, the width between the inner edge and the outer edge of the third branch gradually decreases along the extending direction thereof, and the width between the inner edge and the outer edge of the fourth branch gradually decreases along the extending direction thereof.
In one embodiment of the invention, the width of the end of the first branch away from the intersection of the second branch and the first branch, the width of the end of the second branch away from the intersection of the second branch and the first branch, the width of the end of the third branch away from the intersection of the second branch and the first branch, and the width of the end of the fourth branch away from the intersection of the second branch and the first branch are all 25-40 mm.
In one embodiment of the invention, the length of the first branch, the length of the second branch, the length of the third branch and the length of the fourth branch are all equal.
In one embodiment of the invention, the included angle between the inner edge of the first branch and the inner edge of the second branch is 40-50 degrees.
In one embodiment of the invention, further comprising a transition portion disposed at an intersection of the first, second, third and fourth branches.
In one embodiment of the invention, the width of the transition part is 45-65 mm.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the wafer transmission blade is designed to be of a structure with four branches, and the combined design of the four branches can enable the transmission blade to be in contact with the region with the minimum bending deformation degree of the wafer, so that the region with the larger bending deformation degree of the wafer is in a suspended state, the contact area between the wafer and the transmission blade when the wafer is subjected to bending deformation is reduced, the generation of particles and scratches on the surface of the wafer is reduced, and the yield of the wafer is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial growth process chamber provided in the prior art;
FIG. 2 is a schematic view of a trapezoidal transfer blade for transferring a wafer according to the prior art;
FIG. 3 is a schematic view of a wafer bending deformation on a trapezoidal transfer blade according to the prior art;
FIG. 4 is a schematic view of a first wafer transfer blade according to an embodiment of the present invention;
FIG. 5 is a schematic view of a second wafer transfer blade according to an embodiment of the present invention;
FIG. 6 is a schematic view of a third wafer transfer blade according to an embodiment of the present invention;
FIG. 7 is a schematic view of a fourth wafer transfer blade according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a fifth wafer transfer blade according to an embodiment of the present invention;
fig. 9 a-9 b are schematic diagrams illustrating bending deformation of a silicon wafer on a conveying blade according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 2 and 3, fig. 3 is a schematic diagram illustrating a wafer bending deformation on a trapezoidal transfer blade according to the prior art. The Up region and the Down region in fig. 3 are regions where the wafer is bent to the maximum extent; the Up region is a peak position and represents a region with the maximum upward bending degree of the wafer; the Down region is the valley position and represents the region where the wafer bends the most downward. As can be seen from fig. 2 and 3, the edge of the trapezoidal transfer blade will contact with the valley position before the wafer is deformed, and the peak position is on the trapezoidal transfer blade; when the wafer is subjected to bending deformation, the bending deformation area and the trapezoidal transmission blade are subjected to friction; the wave crest position and the wave trough position of the wafer have larger degrees of bending deformation, so that the friction generated between the wafer and the trapezoidal conveying blade is relatively more, particularly the wave trough position bent downwards generates the most friction between the wafer and the trapezoidal conveying blade, and the particles and scratches at the position are the most.
Based on the above rule of the bending deformation of the wafer on the trapezoidal conveying blade, the embodiment designs a wafer conveying blade, so that the wafer conveying blade is prevented from contacting with the wafer at the position with larger bending deformation, especially the wave trough position, as far as possible, and the particles and scratches on the surface of the wafer are reduced by reducing the contact area between the wafer and the conveying blade.
Referring to fig. 4, fig. 4 is a schematic structural view of a first wafer transfer blade according to an embodiment of the present invention. The wafer transfer blade includes a base 10, a first branch 20, a second branch 30, a third branch 40, and a fourth branch 50. Wherein the first branch 20 extends from a first position of the base 10 to a first direction away from the base 10; the second branch 30 extends from a second position of the base 10 to a second direction far away from the base 10, and the extending end of the first branch 20 intersects with the extending end of the second branch 30, the first direction is different from the second direction; the third branch 40 extends from the intersection of the first branch 20 and the second branch 30 to a third direction away from the base 10; the fourth branch 50 extends from the intersection of the first branch 20 and the second branch 30 in a fourth direction away from the base 10.
Since the third branch 40 and the fourth branch 50 extend from the intersection of the first branch 20 and the second branch 30, and the first direction is different from the second direction, the four branches of the wafer transfer blade form an "X" or "X-like" shape. That is, a line l parallel to the outer edge 12 is drawn at the intersection of the first branch 20 and the second branch 301The straight line l1The area of the four branches is divided into an area close to the base 10 and an area far from the base 10, the first branch 20, the second branch 30 being in the area close to the base 10, the third branch 40 and the fourth branch 50 being in the area far from the base 10.
In one particular embodiment, the base 10, the first branch 20, the second branch 30, the third branch 40 and the fourth branch 50 may be fabricated to form a one-piece blade. In other embodiments, the base 10, the first branch 20, the second branch 30, the third branch 40 and the fourth branch 50 may be independent components, and the components are connected to each other to assemble the whole blade.
It should be noted that the first portion and the second portion refer to two positions that are located at the same edge of the base portion 10 and have a certain distance therebetween, for example, in the present embodiment, the first portion and the second portion of the base portion 10 are both located at the inner edge 11 of the base portion 10.
Referring to fig. 5, fig. 5 is a schematic structural view of a second wafer transfer blade according to an embodiment of the present invention, in which the first branch 20 may extend from an outer position of the inner edge 11, or may extend from an inner position of the inner edge 11, and similarly, the second branch 30 may extend from an outer position of the inner edge 11, or may extend from an inner position of the inner edge 11. The first leg 20 in fig. 5 extends from an outer position of the inner edge 11, i.e. the first location is located at the outer position of the inner edge 11, and the second leg 30 extends from an inner position of the inner edge 11, i.e. the second location is located at the inner position of the inner edge 11.
In the present embodiment, the direction away from the base 10 includes any direction that is in the same plane as the base 10 and faces away from the outer edge 12 of the base 10, including a direction perpendicular to the outer edge 12 and a direction forming an angle with the outer edge 12. Taking the first direction perpendicular to the outer edge 12 as an example, the second direction is different from the first direction, and therefore, the second direction forms a certain angle with the outer edge 12. The third direction may be perpendicular to the outer edge 12, or may form an angle with the outer edge 12; the fourth direction may be perpendicular to the outer edge 12 or may form an angle with the outer edge 12. The third direction and the fourth direction may be the same or different.
Referring to fig. 6, fig. 6 is a schematic structural view of a third wafer transfer blade according to an embodiment of the present invention, in fig. 6, an included angle is formed between an outer edge 12 of the base 10 and an outer edge 42 of the third branch 40 and an outer edge 52 of the fourth branch 50, wherein the first branch 20, the second branch 30, the third branch 40, and the fourth branch 50 are at an angle of 90 °; namely, a certain included angle is formed between the outer edge 12 and each of the first direction, the second direction, the third direction and the fourth direction, and the third direction is different from the fourth direction.
When the wafer is conveyed by adopting the wafer conveying blade, according to the <011> crystal direction and the <010> crystal direction of the wafer, a certain <011> crystal direction position which is easy to bend and deform downwards is in a suspended state, and the <011> crystal direction position which is opposite to the <011> crystal direction is also in a suspended state, and then the wafer is conveyed; when the conveying blade conveys the wafer into the epitaxial growth process chamber, the position which is easy to bend and deform downwards is in a suspended state and is not in contact with the conveying blade, so that the position which is easy to bend and deform downwards of the wafer and the conveying blade cannot generate friction, particles and scratches on the surface of the wafer are reduced, and the yield of the wafer is improved.
Referring to fig. 4 and 7, fig. 7 is a schematic structural diagram of a fourth wafer transfer blade according to an embodiment of the present invention. For the lengths of the four branches, the lengths of the first branch 20, the second branch 30, the third branch 40 and the fourth branch 50 may be the same or different, and two of the branches may have the same length or three of the branches may have the same length. That is, the intersection of the first branch 20 and the second branch 30 may have a shorter distance from the base 10, as shown in fig. 7, or a longer distance from the base 10, as shown in fig. 4; the intersection of the first branch 20 or the second branch 30 may be located at an axis of symmetry l of the base 10 perpendicular to the outer edge 122Above, also can be located at the symmetry axis l2On either side of the base. Preferably, the four branches have the same length, and the same length can ensure that the intersection of the four branches is located at the center of the wafer, and the center of the wafer is not easily bent or deformed and is not easily rubbed with the transfer blade, so that the defects such as particles, scratches and the like on the wafer can be reduced.
Further, the first branch 20 and the second branch 30 may be along the symmetry axis l2Symmetrical distribution, see fig. 4; or along the axis of symmetry l2See fig. 5 for an asymmetric distribution. The third branch 40 and the fourth branch 50 may be along the symmetry axis l2Symmetrical distribution, see fig. 4; or along the axis of symmetry l2See fig. 6 for an asymmetric distribution. Preferably, the first branch 20 and the second branch 30 are along the symmetry axis l because the peak positions and the valley positions of the wafer are sequentially alternated, and the distances and angles between the adjacent peak positions and the valley positions are equal2Symmetrically distributed, and the third branch 40 and the fourth branch 50 are along the array axis l2The symmetrical distribution ensures that when the transmission blades transmit the wafer, the transmission blades can avoid the position of downward bending deformation of the wafer and the position of upward bending deformation of the wafer, so that the transmission blades are contacted with the positions between the downward bending deformation area and the upward bending deformation area, the bending deformation degree of the wafer at the position is minimum, and the relative friction between the transmission blades is less, thereby reducing the friction between the transmission bladesThe generation of defects such as particles, scratches and the like on the wafer is reduced.
Further, referring to fig. 4, the first branch 20 and the third branch 40 are along a line l1Symmetrically distributed and along which the second branch 30 and the fourth branch 50 are also situated1Symmetrically distributed, i.e. the third branch 40 extends in the second direction from the intersection of the second branch 30 and the first branch 20, and the fourth branch 50 extends in the first direction from the intersection of the second branch 30 and the first branch 20; that is, the third direction coincides with the second direction, and the fourth direction coincides with the first direction, so that the four branches form central symmetry. The four branches are arranged to be centrosymmetric, the positions of the wafer, which are easy to bend upwards and bend downwards, are suspended when the wafer is placed, and the rest parts which are easy to bend and deform are suspended along with the positions; for example, the orientation of the crystal may be adjusted when the wafer is placed<010>Is placed between the third branch 40 and the fourth branch 50, while allowing a crystal orientation that is susceptible to downward bending deformation<011>The position is suspended, and the position of the wafer which is easy to bend and deform is centrosymmetric, and the center of the conveying blade is symmetric, so that the wafer is in the crystal direction<010>And crystal orientation<011>When the positions are all suspended, the other crystal directions<010>And crystal orientation<011>The position is also in unsettled state, is favorable to carrying out accurate quick location to the wafer, shortens the time of placing the wafer, and then improves transport blade's conveying efficiency, reduces the wafer simultaneously and takes place its deformation position and transport blade's area of contact when bending deformation, reduces the production of defects such as granule and mar on the wafer.
For the widths d of the four branches, the width d of each branch may be gradually varied (i.e., gradually increased or gradually decreased) along the extending direction thereof, or may be kept constant (i.e., equal width) along the extending direction thereof; if the conveying blade adopts four branches with equal width, the width d of each branch can be 25-40 mm, as shown in fig. 4. Preferably, the width of the end of each branch contacting the edge of the wafer is smaller than the width of the end contacting the center of the wafer, i.e. the width between the inner edge 21 and the outer edge 22 of the first branch 20 increases gradually with the extending direction thereof, the width between the inner edge 31 and the outer edge 32 of the second branch 30 increases gradually with the extending direction thereof, the width between the inner edge 41 and the outer edge 42 of the third branch 40 decreases gradually with the extending direction thereof, and the width between the inner edge 51 and the outer edge 52 of the fourth branch 50 decreases gradually with the extending direction thereof; further, the width of the end part of each branch contacting with the edge of the wafer (i.e. the end part far away from the intersection of the four branches) is 25-40 mm. Because the position of the wafer, which is easy to bend and deform, is located at the edge of the wafer, the width of the end part, which is in contact with the edge of the wafer, of each branch is set to be smaller than the width of the end part, which is in contact with the center of the wafer, so that the contact area between the deformed part and the conveying blade when the wafer bends and deforms can be reduced to the greatest extent, the friction between the wafer and the conveying blade is further reduced, and the generation of defects such as particles, scratches and the like on the wafer is reduced.
Further, referring to fig. 2 and 4, in the embodiment, the epitaxial growth process chamber is further provided with 3 wafer lifting pins 5 at positions where the wafers are placed, and an included angle formed between each two adjacent wafer lifting pins 5 and the circle center of each wafer is 120 °. Therefore, in order to ensure that the transfer blade does not collide with the wafer lift pins 5 during the transfer and the wafer lift pins 5 do not contact the transfer blade during the up and down movement, it is preferable to set the angle θ between the inner edge 21 of the first branch 20 and the inner edge 31 of the second branch 30 to 40 to 50 °.
Further, please refer to fig. 8 and fig. 9a to 9b, fig. 8 is a schematic structural view of a fifth wafer transferring blade according to an embodiment of the present invention, and fig. 9a to 9b are schematic structural views of a silicon wafer undergoing bending deformation on the transferring blade according to an embodiment of the present invention, wherein fig. 9a is a top view and fig. 9b is a side view. A transition 60 is provided at the intersection of the first, second, third and fourth branches 20, 30, 40, 50. The extending ends of the first branch 20 and the second branch 30 may intersect first and then continue to extend through the transition portion 60, and the third branch 40 and the fourth branch 50 extend from the extending end of the transition portion 60, so that the intersection point of the first branch 20 and the second branch 30 is located at the side of the transition portion 60, as shown in fig. 9 a. The first branch 20, the second branch 30, the third branch 40, and the fourth branch 50 may also intersect first, and then the transition portion 60 covers the intersection, so that the intersection point of the first branch 20 and the second branch 30 is located in the transition portion 60, as shown in fig. 8. Similarly, the intersection of the third branch 40 and the transition portion 60 and the intersection of the fourth branch 50 and the transition portion 60 may or may not be the same. The transition portion 60 is disposed to avoid friction caused by contact between the edge of the wafer and the blade, which is easy to deform, and to increase the contact area of the transfer blade at the center of the wafer, so as to improve the supporting force of the transfer blade on the wafer and improve the stability during transfer.
The shape of the transition portion 60 includes, but is not limited to, rectangular, circular, trapezoidal, triangular, etc., and the present embodiment is not further limited. The width w of the transition portion 60 is preferably smaller than the width of the base portion 10, and the width thereof may be in the range of 45-65 mm to avoid collision between the blade and the lift pin during transportation of the blade and during lifting of the lift pin. Further, the width of the transition portion 60 is not limited to the above parameters, and may be determined according to the structure of the epitaxial growth process chamber in practical use. It should be noted that the width of the transition portion 60 refers to the maximum distance in the direction parallel to the outer edge 12 of the base portion 10.
Referring to fig. 9a to 9b, the shaded portion in fig. 9a is the contact portion of the silicon wafer 1 and the transfer blade. Taking the silicon wafer 1 with four branches as center symmetry and equal width, and the inner edge 21 of the first branch 20 and the inner edge 31 of the second branch 30 form an included angle of 45 degrees, and the wafer transfer blade provided with the transition part 60 transfers the silicon wafer 1 with the diameter of 300mm, firstly, the crystal orientation of the groove <010> of the silicon wafer 1 is kept consistent with the transfer direction of the transfer blade, so that the four branches are all positioned at the middle position of the upward bending area and the downward bending area, the silicon wafer is placed on the transfer blade and transferred into the epitaxial growth process chamber, and when entering the process chamber, the silicon wafer is heated and bent and deformed. As can be seen from fig. 9a and 9b, both the Up region and the Down region where the maximum bending deformation of the silicon wafer 1 occurs are in a suspended state and are not in contact with the transfer blade, and the region where the transfer blade is in contact with the silicon wafer 1 is the region where the minimum bending deformation occurs; furthermore, the 3 wafer lift pins 5 do not collide with the transfer blade in the process of transferring the silicon wafer 1 by the transfer blade and in the process of lifting the silicon wafer 1 by the lift pins 5. Therefore, the region with the maximum bending deformation degree of the silicon wafer 1 does not generate friction with the conveying blade, and the defects of particles, scratches and the like are avoided; and the area where the silicon wafer 1 contacts the transfer blade is a position where the bending deformation of the silicon wafer 1 is minimized, and the friction generated between the position and the transfer blade is small, thereby reducing particles and scratches generated on the silicon wafer.
Further, referring to fig. 4 and 9b, the inner edge 11 side of the base 10 has a positioning portion 13 protruding relative to the first branch 20 and the second branch 30, and the extending end of the third branch 40 is provided with a positioning portion 43, and the extending end of the fourth branch 50 is provided with a positioning portion 53, which together form a shape matching the shape of the wafer for placing the wafer.
According to the invention, the wafer transmission blade is designed to be provided with the first branch 20, the second branch 30, the third branch 40 and the fourth branch 50, the four branches can avoid the region with the largest wafer bending deformation degree and only contact the region with the smallest wafer bending deformation degree, so that the region with the larger wafer bending deformation degree is in a suspended state, the contact area between the wafer and the transmission blade when the wafer is subjected to bending deformation is reduced, the generation of particles and scratches on the surface of the wafer is reduced, and the yield of the wafer is greatly improved. On the other hand, because the contact area between the wafer and the transmission blade is reduced, the pollution caused by the contact between the wafer and the blade is also reduced, and the yield of the wafer is further improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A wafer transfer blade, comprising: a base, a first branch, a second branch, a third branch, and a fourth branch, wherein,
the first branch extends from a first location of the base portion to a first direction away from the base portion;
the second branch extends from the second position of the base part to a second direction far away from the base part, and the extending end of the first branch is intersected with the extending end of the second branch;
the first direction is different from the second direction;
the third branch extends from an intersection of the first branch and the second branch in a third direction away from the base;
the fourth branch extends from an intersection of the first branch and the second branch in a fourth direction away from the base.
2. The wafer transfer blade of claim 1, wherein the first leg and the second leg are symmetrically distributed along an axis of symmetry of the base.
3. The wafer transfer blade of claim 1 or 2, wherein the third leg and the fourth leg are symmetrically distributed along an axis of symmetry of the base.
4. The wafer transfer blade of claim 3, wherein the third branch extends in the second direction from an intersection of the second branch and the first branch, and the fourth branch extends in the first direction from an intersection of the second branch and the first branch.
5. The wafer transfer blade of claim 1, wherein the first leg has a width between the inner edge and the outer edge that gradually increases along the extension direction, the second leg has a width between the inner edge and the outer edge that gradually increases along the extension direction, the third leg has a width between the inner edge and the outer edge that gradually decreases along the extension direction, and the fourth leg has a width between the inner edge and the outer edge that gradually decreases along the extension direction.
6. The wafer transfer blade of claim 5, wherein a width of the first leg away from an end of the second leg at the intersection with the first leg, a width of the second leg away from an end of the second leg at the intersection with the first leg, a width of the third leg away from an end of the third leg at the intersection with the first leg, and a width of the fourth leg away from an end of the second leg at the intersection with the first leg are each 25-40 mm.
7. The wafer transfer blade of claim 1, wherein the length of the first branch, the length of the second branch, the length of the third branch, and the length of the fourth branch are all equal.
8. The wafer transfer blade of claim 1, wherein an angle between an inner edge of the first leg and an inner edge of the second leg is 40-50 °.
9. The wafer transfer blade of claim 1, further comprising a transition portion disposed at an intersection of the first branch, the second branch, the third branch, and the fourth branch.
10. The wafer transfer blade of claim 9, wherein the transition portion has a width of 45 mm to 65 mm.
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