CN110907087A - Pressure sensor and preparation method thereof - Google Patents
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- CN110907087A CN110907087A CN201811087878.8A CN201811087878A CN110907087A CN 110907087 A CN110907087 A CN 110907087A CN 201811087878 A CN201811087878 A CN 201811087878A CN 110907087 A CN110907087 A CN 110907087A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
Abstract
The invention provides a pressure sensor and a preparation method thereof, wherein the method comprises the following steps: uniformly stirring a main agent and an auxiliary agent of polydimethylsiloxane in a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing to obtain a polydimethylsiloxane film; photoetching the polydimethylsiloxane film by adopting laser to form a graphene conductive pattern; and placing the two graphene conductive patterns in face-to-face contact to obtain the pressure sensor. This application adopts laser irradiation PDMS to form graphite alkene conducting pattern, and laser decomposes PDMS and generates graphite alkene, forms the protruding electrically conductive channel in border, and the structure of recess, both sides triangular prism in the middle of the shape is similar becomes flat under the pressure effect to make area of contact grow, contact resistance reduces, makes pressure sensor have higher sensitivity under the little pressure scope promptly, and preparation method process is simple. The pressure sensor can be attached to the skin and can be used in the field of electronic skin.
Description
Technical Field
The invention belongs to the technical field of skin sensors, and particularly relates to a pressure sensor and a preparation method thereof.
Background
With the rise of wearable devices, researches on various pressure sensors have been receiving more and more attention in recent years, wherein the skin pressure sensor becomes a research hotspot. Because the skin can be naturally attached, the epidermal pressure sensor has more comfortable use experience than the traditional pressure sensor. The traditional pressure sensor is attached to the body and feels like the traditional pressure sensor is attached to the bundy, so that people feel uncomfortable in oppression. In addition, tearing them off is not only a bit painful, but can even cause damage to delicate skin (such as that of newborn babies). The use experience of the epidermis sensor is just like a tattoo patch played by children, the processes of adsorption and removal are not uncomfortable, and the skin is not damaged. The most attractive application of the epidermal pressure sensor is the in-situ pulse monitoring, which is called pulse feeling in traditional Chinese medicine. The difference is that the skin pressure sensor can naturally adsorb the skin, and pulse information is monitored all day long under the condition that a user does not feel. Real-time monitoring of heart rate is important not only for cardiac patients, but also for healthy people to prevent cardiovascular disease in advance. However, if a healthy person wants to wear the pressure sensor all day long, the healthy person must not feel any discomfort, and the superiority of the skin pressure sensor can be reflected in this respect.
Sensitivity and response time are two important parameters of a pressure sensor. The epidermal pressure sensor monitors the heart rate by detecting the minute movement of the skin caused by the blood passing through the blood vessels, which requires an extremely high sensitivity. Although the heart rate of a healthy person is generally 50-100 times/min, to obtain more important physiological signals (such as reflected wave enhancement index, pulse wave velocity and the like) from the pulse, a complete pulse waveform needs to be detected, which requires a response time in the order of milliseconds.
Currently, there are three main types of pressure sensors: capacitive, piezoelectric, and resistive. The resistance type pressure sensor has wide application prospect due to low production cost and simple measuring circuit. The materials required for a resistive skin pressure sensor are not only pressure sensitive, but are also flexible. The traditional materials can rarely meet the requirements of the two points at the same time. Two-dimensional graphene is popular in the field of skin pressure sensors because of excellent electrical and mechanical properties. Recently, a large number of pressure sensors based on graphene materials have been reported. Their sensitivity and response time still do not meet the requirements for real-time pulse monitoring.
Disclosure of Invention
In view of the above, the present invention is directed to a pressure sensor and a method for manufacturing the same, which is simple and has high sensitivity.
The invention provides a preparation method of a pressure sensor, which comprises the following steps:
uniformly stirring a main agent and an auxiliary agent of polydimethylsiloxane in a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing to obtain a polydimethylsiloxane film;
photoetching the polydimethylsiloxane film by adopting laser to form a graphene conductive pattern;
and placing the two graphene conductive patterns in face-to-face contact to obtain the pressure sensor.
Preferably, the graphene conductive pattern is a cube or a cuboid.
Preferably, the area of the surface-to-surface contact is equal to the length of the graphene conductive pattern × the width of the graphene conductive pattern.
Preferably, the wavelength of the laser is 405nm, and the power of the laser is 100-800 mW.
Preferably, the area of the surface-to-surface contact is 4-36 mm2。
The invention provides a pressure sensor which is characterized by comprising two layers of same graphene conductive films which are arranged in a stacked mode, wherein each layer of graphene conductive film comprises a graphene conductive pattern which is arranged in a stacked mode and a polydimethylsiloxane substrate which is far away from the end of the graphene conductive pattern;
the two graphene conductive patterns are placed in face-to-face contact.
Preferably, the graphene conductive pattern is in the shape of a cuboid or a cube.
The invention provides a preparation method of a pressure sensor, which comprises the following steps: uniformly stirring a main agent and an auxiliary agent of Polydimethylsiloxane (PDMS) according to a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing to obtain a polydimethylsiloxane film; photoetching the polydimethylsiloxane film by adopting laser to form a graphene conductive pattern; and placing the two graphene conductive patterns in face-to-face contact to obtain the pressure sensor. According to the method, the PDMS is irradiated by the laser to form the graphene conductive pattern, when the PDMS film is swept by the laser in the air, the PDMS is decomposed at high temperature to generate graphene, a conductive channel with protruding edges is formed, the shape of the conductive channel is similar to that of a middle groove and two triangular prisms, and the conductive channel is flattened under the action of pressure, so that the contact area is enlarged, the contact resistance is reduced, and the pressure sensor has sensitivity in a small pressure range; the special microstructure of the surface of the pressure sensor determines the sensitivity of the pressure sensor, so that the pressure sensor has higher sensitivity in a small pressure range, and the preparation method provided by the invention has a simple process. The pressure sensor provided by the application can be attached to the skin and can be used in the field of electronic skin. Experimental results show that the pressure sensor prepared by the invention has higher sensitivity when the pressure is less than 1 kPa.
Drawings
FIG. 1 is a schematic structural diagram of a pressure sensor provided in the present invention;
FIG. 2 is a Raman characterization plot of PDMS after and without laser irradiation;
FIG. 3 is a graph of the relative rate of change of conductance as a function of pressure for a pressure sensor prepared in example 1 of the present invention;
FIG. 4 is a graph of transient response characteristics of a pressure sensor prepared in example 1 of the present invention;
FIG. 5 is a graph of transient recovery characteristics of a pressure sensor prepared in example 1 of the present invention;
FIG. 6 is a graph showing the dynamic stability characteristics of the pressure sensor prepared in example 1 of the present invention;
FIG. 7 shows the result of measuring the pulse wave of the radial artery by attaching the pressure sensor prepared in example 1 of the present invention to the skin of the wrist;
FIG. 8 is a graph of the relative rate of change of conductance versus pressure for a pressure sensor made in accordance with example 2 of the present invention;
FIG. 9 is a graph of the relative rate of change of conductance versus pressure for a pressure sensor prepared in example 3 of the present invention.
Detailed Description
The invention provides a preparation method of a pressure sensor, which comprises the following steps:
uniformly stirring a main agent and an auxiliary agent of polydimethylsiloxane in a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing to obtain a polydimethylsiloxane film;
photoetching the polydimethylsiloxane film by adopting laser to form a graphene conductive pattern;
and placing the two graphene conductive patterns in face-to-face contact to obtain the pressure sensor.
According to the method, the PDMS is irradiated by the laser to form the graphene conductive pattern, when the PDMS film is swept by the laser in the air, the PDMS is decomposed at high temperature to generate graphene, a conductive channel with protruding edges is formed, the shape of the conductive channel is similar to that of a middle groove and two triangular prisms, and the conductive channel is flattened under the action of pressure, so that the contact area is enlarged, the contact resistance is reduced, and the pressure sensor has sensitivity in a small pressure range; the special microstructure of the surface of the pressure sensor determines the sensitivity of the pressure sensor, so that the pressure sensor has higher sensitivity in a small pressure range, and the preparation method provided by the invention has a simple process. The pressure sensor provided by the application can be attached to the skin and can be used in the field of electronic skin.
The polydimethylsiloxane film is prepared by uniformly stirring a polydimethylsiloxane main agent and an auxiliary agent in a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing the mixture. The present invention preferably employs a coating bar to uniformly disperse the mixture on the substrate. The substrate is preferably selected from PET film. The PET film is adopted in the invention, and firstly, the price is low; secondly, the PDMS film can be easily peeled off from the PET film; and thirdly, the cured PDMS can be cut into small pieces together with the PET film, so that the subsequent sensor is easy to manufacture. In the embodiment of the present invention, the Polydimethylsiloxane (PDMS) is dow corning SYLGARD 184. In the invention, the curing temperature is preferably 10-40 ℃; the curing time is preferably 20-40 h.
After the polydimethylsiloxane film is obtained, the laser is adopted to carry out photoetching on the polydimethylsiloxane film to form a graphene conductive pattern. The specific process of laser lithography in this application is well known to those skilled in the art, and in this application, PDMS material is selected as a reactant to be decomposed at high temperature to generate carbon to generate graphene. According to the invention, when a PDMS film is swept by laser in the air, PDMS is decomposed at high temperature to generate graphene, a conductive channel with a protruding edge is formed, the shape of the conductive channel is similar to that of a structure with a middle groove and triangular prisms on two sides, and a graphene conductive pattern is photoetched. The graphene conductive film obtained after laser photoetching comprises a graphene conductive pattern and a polydimethylsiloxane substrate far away from the end of the graphene conductive pattern; the microstructure of the photolithographically generated graphene conductive pattern determines the sensitivity of the pressure sensor. According to the invention, in the laser photoetching process, the wavelength of the laser must be in a PDMS absorption range, the power must be large enough, and the wavelength of the laser is preferably 405 nm; the power of the laser is preferably 100-800 mW. The number of the graphene conductive patterns photoetched on one PDMS film is not limited, a plurality of same patterns can be photoetched on the PDMS film at one time, and then the patterns are respectively cut off, so that a plurality of graphene conductive patterns are obtained.
After the graphene conductive patterns are obtained, the two graphene conductive patterns are placed in face-to-face contact to obtain the pressure sensor. In a specific example, two identical graphene conductive patterns are respectively cut off, and then the two graphene conductive patterns are placed in face-to-face contact with each other, so that the pressure sensor is obtained. According to the graphene conductive pattern, polydimethylsiloxane is used as a flexible substrate, the graphene conductive pattern and the polydimethylsiloxane flexible substrate are cut during cutting, and the graphene conductive pattern is placed in face-to-face contact to obtain the pressure sensor. In the present invention, the two graphene conductive patterns are placed "face to face", that is, the two graphene conductive patterns are in face contact with each other. In this process, the two patterns are placed in face-to-face contact, so long as it is ensured that the two graphene conductive patterns are placed in face-to-face contact, and the number of the obtained pressure sensors is mainly determined by the number of patterns previously subjected to photolithography. According to the present invention, the area of the surface-to-surface contact is equal to the length of the graphene conductive pattern × the width of the graphene conductive pattern. Face-to-face of two graphene patternsThe area is a pressure sensitive area, and the area of the area determines the initial contact conductance of the pressure sensor. The area of the surface-to-surface contact is preferably 4-36 mm2. In the present invention, the graphene conductive pattern is preferably cubic or rectangular parallelepiped in shape.
Sensitivity of pressure sensor d ((G-G)0)/G0) Dp, wherein the initial conductance G of the device is determined by the area of face-to-face contact of two graphene conductive patterns when the applied pressure is equal to 00(ii) a With the applied pressure p, the device conductance G. The sensor comprises two graphene conductive patterns with the same net structure. When the laser scans the PDMS film, the PDMS absorbs light to generate heat, the PDMS is decomposed at high temperature to form a groove, carbon generated by the decomposition of the PDMS on the surface of the groove and on two sides of the groove is orderly arranged at high temperature to generate graphene, and finally a conductive graphene strip with a double-peak structure with convex two sides and concave middle is formed. The sizes of the convex structures on the two sides are different due to thermal expansion. In the absence of applied pressure, when the two layers are assembled face-to-face, the larger conductive bump structure between the two layers contacts first to form a conductive path between the two layers, while the smaller bump structure is not yet in contact, which determines the initial conductance G of the device0. When external pressure is applied, the larger protrusions are compressed, resulting in more of the protrusion structures being interconnected. As the applied pressure increases, the total conductive contact area increases, which increases the overall conductance of the sensor. When the external force is eliminated, the elastic deformation of the convex structure is recovered, so that the conductivity of the sensor is recovered.
The invention also provides a pressure sensor, which comprises two layers of same graphene conductive films which are arranged in a superposition manner, wherein each layer of graphene conductive film comprises a graphene conductive pattern which is arranged in a superposition manner and a polydimethylsiloxane substrate which is far away from the end of the graphene conductive pattern;
the two graphene conductive patterns are placed in face-to-face contact.
In the present invention, the graphene conductive pattern has a rectangular parallelepiped or square shape.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a pressure sensor provided by the present invention, wherein black is graphene, and gray is polydimethylsiloxaneA siloxane substrate. The application performs Raman characterization on black and gray areas. The results are shown in fig. 2, fig. 2 is a raman characterization plot of PDMS after and without laser irradiation; as can be seen from fig. 2, the grey area shows the characteristic peaks of PDMS, and the black area shows three peaks: d peak-1350 cm-1G peak to 1580cm-1And 2D peak is-2700 cm-1These raman peaks are consistent with the graphene results reported in the literature, indicating the presence of few layers of graphene in the black regions.
The pressure sensor prepared by the invention realizes the detection of pressure by utilizing the change of contact conductance along with the pressure, the graphene generated by laser irradiation has a protruded microstructure, the shape of the graphene is similar to a triangular prism, the surface microstructure of the graphene conducting layer is flattened under the action of pressure, so that the contact area is enlarged, the contact conductance is increased, the pressure sensor has higher sensitivity to a small pressure range, and meanwhile, the pressure can generate the contact conductance under the effective contact area due to the face-to-face arrangement of two same graphene conducting layers, so that the pressure sensor realizes the detection of the pressure.
In order to further illustrate the present invention, a pressure sensor and a method for manufacturing the same according to the present invention will be described in detail with reference to the following examples, which should not be construed as limiting the scope of the present invention.
Example 1
1) Mixing a main agent of polymethyl siloxane (PDMS) and a curing agent according to a mass ratio of 10:1, and uniformly stirring. Then, about 10ml of the mixture was poured onto a polyethylene terephthalate (PET) film of a4 size, and PDMS was spread on the PET film using a coating rod. Curing at room temperature to obtain a PDMS film;
2) photoetching a graphene conductive pattern on a PDMS film by using 500mW laser, wherein the conductive pattern is a cuboid, and is 6mm long and 6mm wide; the graphene conductive pattern takes polydimethylsiloxane as a flexible substrate;
3) and cutting off the patterns, and placing two same conductive patterns in face-to-face contact to obtain the pressure sensor.
Electrode of pressure sensor and testerThe pressure sensor was connected and measured, and the results are shown in fig. 3, fig. 4, fig. 5, fig. 6 and fig. 7, in which fig. 3 is a graph of the relative change rate of conductance with respect to pressure of the pressure sensor prepared in this example 1, in which ■ is a curve of the relative change rate of resistance with respect to pressure detected, ﹉ is a fitted sensitivity curve from which the sensitivity in the first half was 480kPa-1Sensitivity of the middle half section is 34kPa-1Sensitivity of the second half of the test piece was 0.9kPa-1(ii) a Fig. 4 is a graph of transient response characteristic of the pressure sensor prepared in this example 1, fig. 5 is a graph of transient recovery characteristic of the pressure sensor prepared in this example 1, and fig. 6 is a graph of dynamic stability characteristic of the pressure sensor prepared in this example 1; fig. 7 shows the result of measuring the pulse wave of the radial artery by attaching the pressure sensor prepared in example 1 of the present invention to the skin of the wrist. As can be seen from fig. 7, the pressure sensor prepared in this embodiment has short response and recovery time and high stability, thereby achieving pressure sensing and detection and pulse monitoring.
Example 2
1) Mixing and uniformly stirring a polymethyl siloxane (PDMS) main agent and a curing agent according to a mass ratio of 10: 1. Then, about 10ml of the mixture was poured onto a polyethylene terephthalate (PET) film of a4 size, and PDMS was spread on the PET film using a coating rod. Curing at room temperature to obtain a PDMS film;
2) photoetching a graphene conductive pattern on a PDMS film by using 500mW laser, wherein the conductive pattern is a cuboid, and is 2mm long and 2mm wide; the graphene conductive pattern takes polydimethylsiloxane as a flexible substrate;
3) and cutting off the pattern, and contacting the two same conductive layers in a face-to-face manner to obtain the pressure sensor.
Connecting two graphene films of the pressure sensor with an extraction electrode of a test instrument, and measuring the pressure sensor, as shown in fig. 8, fig. 8 is a graph of the relative change rate of resistance of the pressure sensor prepared in this embodiment 2 with pressure, where ■ is a curve of the relative change rate of resistance with pressure, ﹉ is a fitted sensitivity curve, and the measurement can be performed according to the sensitivity curveThe sensitivity of the first half section is 280kPa-1Sensitivity of the second half of the test piece was 20kPa-1. As can be seen from fig. 8, the pressure sensor prepared in this embodiment has high sensitivity, and thus sensing detection of pressure is achieved.
Example 3
1) Mixing and uniformly stirring a polymethyl siloxane (PDMS) main agent and a curing agent according to a mass ratio of 10: 1. Then, about 10ml of the mixture was poured onto a polyethylene terephthalate (PET) film of a4 size, and PDMS was spread on the PET film using a coating rod. Curing at room temperature to obtain a PDMS film;
2) photoetching a graphene conductive pattern on the PDMS film by using 200mW laser, wherein the conductive pattern is a cuboid, and is 6mm long and 6mm wide; the graphene conductive pattern takes polydimethylsiloxane as a flexible substrate;
3) and cutting off the patterns, and contacting the two same conductive patterns in a surface-to-surface manner to obtain the pressure sensor.
Connecting two graphene films of the pressure sensor with extraction electrodes of a test instrument respectively, and measuring the pressure sensor, as shown in fig. 9, fig. 9 is a graph of the relative change rate of resistance with pressure change of the pressure sensor prepared in this embodiment 3, where ■ is a curve of the relative change rate of resistance with pressure change, ﹉ is a fitted sensitivity curve, which can be obtained from the sensitivity curve, and the sensitivity of the first half section is 200kPa-1Sensitivity of the second half of the test piece was 26kPa-1. As can be seen from fig. 9, the pressure sensor prepared in this embodiment has high sensitivity, and thus sensing detection of pressure is achieved.
From the above embodiments, the present invention provides a method for manufacturing a pressure sensor, including the following steps: uniformly stirring a main agent and an auxiliary agent of Polydimethylsiloxane (PDMS) according to a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing to obtain a polydimethylsiloxane film; photoetching the polydimethylsiloxane film by adopting laser to form a graphene conductive pattern; and placing the two graphene conductive patterns in face-to-face contact to obtain the pressure sensor. According to the method, a graphene conducting layer is prepared by irradiating PDMS with laser, when the PDMS film is scanned by the laser in the air, PDMS is decomposed at high temperature to generate graphene, a conducting channel with protruding edges is formed, the shape of the conducting channel is similar to that of a middle groove and two triangular prisms, and the conducting channel is flattened under the action of pressure, so that the contact area is enlarged, the contact resistance is reduced, and the pressure sensor has sensitivity in a small pressure range; the special microstructure of the surface of the pressure sensor determines the sensitivity of the pressure sensor, so that the pressure sensor has higher sensitivity in a small pressure range, and the preparation method provided by the invention has a simple process. The pressure sensor provided by the application can be attached to the skin and can be used in the field of electronic skin. Experimental results show that the pressure sensor prepared by the invention has higher sensitivity when the pressure is less than 1 kPa.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A method for preparing a pressure sensor comprises the following steps:
uniformly stirring a main agent and an auxiliary agent of polydimethylsiloxane in a mass ratio of 10:1, uniformly dispersing the obtained mixture on a substrate, and curing to obtain a polydimethylsiloxane film;
photoetching the polydimethylsiloxane film by adopting laser to form a graphene conductive pattern;
and placing the two graphene conductive patterns in face-to-face contact to obtain the pressure sensor.
2. The production method according to claim 1, wherein the graphene conductive pattern is a cube or a rectangular parallelepiped.
3. The method according to claim 1, wherein the area of the surface-to-surface contact is equal to the length of the graphene conductive pattern x the width of the graphene conductive pattern.
4. The preparation method according to claim 1, wherein the wavelength of the laser is 405nm, and the power of the laser is 100-800 mW.
5. The method of claim 1, wherein the area of the surface-to-surface contact is 4 to 36mm2。
6. The pressure sensor is characterized by comprising two layers of same graphene conductive films which are arranged in a stacked mode, wherein each layer of graphene conductive film comprises a graphene conductive pattern which is arranged in a stacked mode and a polydimethylsiloxane substrate far away from the end of the graphene conductive pattern;
the two graphene conductive patterns are placed in face-to-face contact.
7. The pressure sensor according to claim 6, wherein the graphene conductive pattern has a rectangular parallelepiped or square shape.
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