CN110907074A - Pressure sensor based on surface enhanced Raman scattering - Google Patents
Pressure sensor based on surface enhanced Raman scattering Download PDFInfo
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- CN110907074A CN110907074A CN201911233741.3A CN201911233741A CN110907074A CN 110907074 A CN110907074 A CN 110907074A CN 201911233741 A CN201911233741 A CN 201911233741A CN 110907074 A CN110907074 A CN 110907074A
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- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000002923 metal particle Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000001237 Raman spectrum Methods 0.000 abstract description 10
- 230000008859 change Effects 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 8
- 230000005672 electromagnetic field Effects 0.000 abstract description 5
- 238000001069 Raman spectroscopy Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention relates to a pressure sensor based on surface enhanced Raman scattering, which comprises a substrate layer, wherein a metal layer is arranged above the substrate layer, a cavity is formed between the metal layer and the substrate layer, periodically arranged holes are also formed in the metal layer, and periodically arranged micro-nano metal particle layers are arranged above the substrate layer at the vertical projection positions of the holes; the pressure sensor based on the surface enhanced Raman scattering can convert a pressure signal into an optical signal and detect the pressure by detecting the change of the Raman scattering of the optical signal; when pressure is applied to the sensor, the metal layer is extruded by the pressure, the height of the cavity is changed, an electromagnetic field generated between the metal layer and the micro-nano metal particle layer by incident light is changed, the intensity of a Raman spectrum characteristic peak is further changed, the pressure can be detected by detecting the change of the Raman spectrum characteristic peak, and the accuracy and the sensitivity are higher.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a pressure sensor based on surface enhanced Raman scattering.
Background
The sensor (english name: transducer/sensor) is a detection device, which can sense the measured information and convert the sensed information into electric signals or other information in required form according to a certain rule to output, so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like.
The sensor features include: miniaturization, digitalization, intellectualization, multifunction, systematization and networking. The method is the first link for realizing automatic detection and automatic control. The existence and development of the sensor enable the object to have the senses of touch, taste, smell and the like, and the object slowly becomes alive. Generally, the sensor is classified into ten categories, i.e., a thermosensitive element, a photosensitive element, a gas-sensitive element, a force-sensitive element, a magnetic-sensitive element, a humidity-sensitive element, a sound-sensitive element, a radiation-sensitive element, a color-sensitive element, and a taste-sensitive element, according to their basic sensing functions.
Pressure sensors are one of the most widely used. The traditional pressure sensor is mainly based on a mechanical structure type device, and indicates pressure by deformation of an elastic element, but the structure is large in size and heavy in weight, and cannot provide electrical output. With the development of semiconductor technology, semiconductor pressure sensors have come to be developed. Its advantages are small size, light weight, high accuracy and high temp. Particularly, with the development of MEMS technology, the semiconductor sensor is miniaturized, and has low power consumption and high reliability. In the prior art, when a pressure sensor is selected, the comprehensive precision and sensitivity of the pressure sensor need to be considered, and how to improve the precision and sensitivity of the pressure sensor is always an important direction for researching the pressure sensor.
Disclosure of Invention
Aiming at the problems, the invention aims to provide a pressure sensor based on surface enhanced Raman scattering, which comprises a substrate layer, wherein a metal layer is arranged above the substrate layer, a cavity is formed between the metal layer and the substrate layer, the metal layer is also provided with periodically arranged holes, and periodically arranged micro-nano metal particle layers are arranged above the substrate layer and positioned at the vertical projection positions of the holes.
The arrangement period of the holes is 500nm multiplied by 500 nm.
The holes are circular holes.
The diameter of the hole is 300 nm.
The height of the cavity is 50 nm-60 nm.
The micro-nano metal particle layer is cylindrical.
The holes are triangular holes.
The micro-nano metal particle layer is in a triangular prism shape.
The thickness of the metal layer is 30 nm-50 nm.
The thickness of the micro-nano metal particle layer is 30 nm-50 nm.
The invention has the beneficial effects that: the pressure sensor based on the surface enhanced Raman scattering provided by the invention can convert a pressure signal into an optical signal, and detect the pressure by detecting the change of the Raman scattering of the optical signal; when pressure is applied to the sensor, the metal layer is extruded by the pressure, so that the height of the cavity is changed, an electromagnetic field generated between the metal layer and the micro-nano metal particle layer by incident light is changed, the intensity of a Raman spectrum characteristic peak is further changed, the pressure can be detected by detecting the change of the Raman spectrum characteristic peak, and the pressure sensor based on the surface enhanced Raman scattering has higher accuracy and sensitivity.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic perspective view of a pressure sensor based on surface enhanced raman scattering.
Fig. 2 is a side schematic view one of a pressure sensor based on surface enhanced raman scattering.
Fig. 3 is a schematic side view of a second pressure sensor based on surface enhanced raman scattering.
Fig. 4 is a schematic top view of a pressure sensor based on surface enhanced raman scattering.
In the figure: 1. a base layer; 2. a metal layer; 3. a micro-nano metal particle layer; 4. a cavity; 5. and (4) holes.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The present embodiment provides a pressure sensor based on surface enhanced raman scattering as shown in fig. 1, which includes a substrate layer 1, wherein the substrate layer 1 mainly plays a supporting role and is capable of transmitting light, therefore, the substrate layer 1 can be made of silicon dioxide; a metal layer 2 is arranged above the substrate layer 1, a cavity 4 is formed between the metal layer 2 and the substrate layer 1, specifically, as shown in fig. 2 and fig. 3, the section of the metal layer 2 is trapezoidal, the left side and the right side of the metal layer are in contact with the substrate layer 1, and the middle part of the metal layer is not in contact with the substrate layer 1, so that the cavity 4 is formed between the metal layer 2 and the substrate layer 1; the metal layer 2 is also provided with periodically arranged holes 5, specifically, the holes 5 are positioned in the middle of the metal layer 2, and periodically arranged micro-nano metal particle layers 3 are arranged above the substrate layer 1 and at the vertical projection positions of the holes 5; in practical application, when the metal layer 2 is pressed by pressure, the height of the cavity 4 is changed, so that the electromagnetic field generated by the vertically incident light between the metal layer 2 and the micro-nano metal particle layer 3 is changed, the intensity of the Raman spectrum characteristic peak of the incident light is changed, the detection of the pressure can be realized by detecting the change of the Raman spectrum characteristic peak, and the pressure sensor can convert a pressure signal into an optical signal and has higher sensitivity and accuracy.
Furthermore, the arrangement period of the holes 5 is 500nm multiplied by 500nm, enough distance exists between the structures, interaction cannot occur, and the holes can be manufactured in a large area under the condition that the holes can be matched with the incident light length.
Further, hole 5 is circular hole, and hole 5's diameter is 300nm, and the shape that sets up in 5 vertical projection's of hole micro-nano metal grained layer 3 is cylindrical, and metal level 2 can pass through electron beam exposure etching preparation with micro-nano metal grained layer 3, and the preparation degree of difficulty is low, and the structure is little moreover, the precision is high, consequently can better improve the precision of sensor.
Further, the height of the cavity 4 is 50nm to 60nm, and preferably, the height of the cavity 4 is 60 nm.
Further, the thickness of the metal layer 2 is 30nm to 50nm, and preferably, the thickness of the metal layer 2 is 40 nm.
Further, the thickness of the micro-nano metal particle layer 3 is 30nm to 50nm, and preferably, the thickness of the micro-nano metal particle layer 3 is 40 nm.
Example 2
The present embodiment provides a pressure sensor based on surface enhanced raman scattering as shown in fig. 3, which includes a substrate layer 1, wherein the substrate layer 1 mainly plays a supporting role and is capable of transmitting light, therefore, the substrate layer 1 can be made of silicon dioxide; a metal layer 2 is arranged above the substrate layer 1, a cavity 4 is formed between the metal layer 2 and the substrate layer 1, specifically, as shown in fig. 3, the section of the metal layer 2 is trapezoidal, the left side and the right side of the metal layer are in contact with the substrate layer 1, and the middle part of the metal layer is not in contact with the substrate layer 1, so that the cavity 4 is formed between the metal layer 2 and the substrate layer 1; the metal layer 2 is further provided with holes 5 which are arranged periodically, specifically, the holes 5 are located in the middle of the metal layer 2, periodically arranged micro-nano metal particle layers 3 are arranged at the vertical projection positions of the holes 5 above the substrate layer 1, the micro-nano metal particle layers 3 are conical, and the bottom surfaces of the micro-nano metal particle layers 3 are circles with the diameter of 300 nm. The metal layer 2 and the micro-nano metal particle layer 3 can be manufactured through electron beam exposure etching, wherein when the micro-nano metal particle layer 3 is manufactured, the deposition angle needs to be changed, and the structure can regulate and control the intensity of a local electric field between the metal layer 2 and the micro-nano metal particle layer 3 and can also regulate and control the intensity of the local electric field between the left side and the right side. The regulation and control coupling distance is large, and the change range caused by measurement mechanics is large.
The height of the cavity 4 is 50 nm.
The thickness of the metal layer 2 is 45 nm.
The thickness of the micro-nano metal particle layer 3 is 35 nm.
The arrangement period of the holes 5 is 500nm multiplied by 500 nm.
In practical application, when the metal layer 2 is pressed by pressure, the height of the cavity 4 is changed, so that the electromagnetic field generated by the vertically incident light between the metal layer 2 and the micro-nano metal particle layer 3 is changed, the intensity of the Raman spectrum characteristic peak of the incident light is changed, the detection of the pressure can be realized by detecting the change of the Raman spectrum characteristic peak, and the pressure sensor can convert a pressure signal into an optical signal and has higher sensitivity and accuracy.
Example 3
On the basis of the embodiment 1, as shown in fig. 4, the holes 5 are triangular holes; the micro-nano metal particle layer 3 vertically projected from the hole 5 is in a triangular prism shape, so that large charges can be gathered at the tip of the triangle of the hole 5 and the micro-nano metal particle layer 3, the local strength of an electric field is higher, and the measuring accuracy is higher.
Example 4
On the basis of the embodiments 1, 2 and 3, biomolecules can be added into the cavities 4, and the coupling strength between the metal layer 2 and the micro-nano metal particle layer 3 can be influenced by changing the concentration of the biomolecules. The Raman signal is enhanced, the sensitivity and the accuracy of pressure detection are further improved, and the pressure measurement is facilitated.
Example 5
In examples 1, 2, 3, and 3, the shape of the hole 5 formed in the metal layer 2 does not correspond to the shape of the micro-nano metal particle layer 3, for example: the shape of the hole 5 is circular, and the shape of the micro-nano metal particle layer 3 is triangular prism-shaped, so that the coupling surface area of the metal layer 2 and the surface of the micro-nano metal particle layer 3 can be increased, and the coupling strength is enhanced, thereby improving the sensitivity and accuracy of pressure detection and being beneficial to pressure measurement.
In summary, the pressure sensor based on the surface enhanced raman scattering can convert a pressure signal into an optical signal, and detect the pressure by detecting the change of the raman scattering of the optical signal; when pressure is applied to the sensor, the metal layer 2 is extruded by the pressure, so that the height of the cavity 4 is changed, an electromagnetic field generated between the metal layer 2 and the micro-nano metal particle layer 3 by incident light is changed, the intensity of a Raman spectrum characteristic peak is further changed, the pressure detection can be realized by detecting the change of the Raman spectrum characteristic peak, and the pressure sensor based on the surface enhanced Raman scattering has higher accuracy and sensitivity.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A pressure sensor based on surface enhanced raman scattering, characterized by: the metal particle layer forming device comprises a substrate layer (1), wherein a metal layer (2) is arranged above the substrate layer (1), a cavity (4) is formed between the metal layer (2) and the substrate layer (1), holes (5) which are arranged periodically are further formed in the metal layer (2), and micro-nano metal particle layers (3) which are arranged periodically are arranged at the vertical projection positions of the holes (5) above the substrate layer (1).
2. A surface enhanced raman scattering based pressure sensor according to claim 1, wherein: the arrangement period of the holes (5) is 500nm multiplied by 500 nm.
3. A surface enhanced raman scattering based pressure sensor according to claim 1 or 2, wherein: the holes (5) are round holes.
4. A surface enhanced raman scattering based pressure sensor according to claim 3, wherein: the diameter of the hole (5) is 300 nm.
5. A surface enhanced raman scattering based pressure sensor according to claim 1, wherein: the height of the cavity (4) is 50 nm-60 nm.
6. A surface enhanced raman scattering based pressure sensor according to claim 1, wherein: the micro-nano metal particle layer (3) is cylindrical.
7. A surface enhanced raman scattering based pressure sensor according to claim 1 or 2, wherein: the holes (5) are triangular holes.
8. A surface enhanced raman scattering based pressure sensor according to claim 1, wherein: the micro-nano metal particle layer (3) is in a triangular prism shape.
9. A surface enhanced raman scattering based pressure sensor according to claim 1, wherein: the thickness of the metal layer (2) is 30 nm-50 nm.
10. A surface enhanced raman scattering based pressure sensor according to claim 1, wherein: the thickness of the micro-nano metal particle layer (3) is 30 nm-50 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911233741.3A CN110907074A (en) | 2019-12-05 | 2019-12-05 | Pressure sensor based on surface enhanced Raman scattering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911233741.3A CN110907074A (en) | 2019-12-05 | 2019-12-05 | Pressure sensor based on surface enhanced Raman scattering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110907074A true CN110907074A (en) | 2020-03-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911233741.3A Withdrawn CN110907074A (en) | 2019-12-05 | 2019-12-05 | Pressure sensor based on surface enhanced Raman scattering |
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| Country | Link |
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| CN (1) | CN110907074A (en) |
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2019
- 2019-12-05 CN CN201911233741.3A patent/CN110907074A/en not_active Withdrawn
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Application publication date: 20200324 |
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