CN110890274A - Method for realizing low-resistance ohmic contact between metal and P-type GaN - Google Patents
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 85
- 239000002184 metal Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 53
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 33
- 239000011737 fluorine Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000009832 plasma treatment Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 description 10
- 238000000137 annealing Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000009351 contact transmission Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
The invention discloses a method for realizing low-resistance ohmic contact between metal and P-type GaN, belonging to the technical field of semiconductor device manufacturing. The method comprises the steps of treating the surface of a p-GaN epitaxial wafer by adopting a fluorine plasma treatment method before depositing a metal electrode on the surface of the p-GaN epitaxial wafer, depositing the metal electrode after treatment, repairing an interface state of the p-GaN surface by utilizing extremely strong electronegativity of fluorine, de-pinning a Fermi level, and realizing good ohmic contact between metal and p-GaN in a subsequent deposition process. As can be seen from measurement, the p-GaN material prepared by the method can realize about 10‑4Ω.cm2While the p-GaN material prepared by the prior art obtains a contact resistivity of about 10‑2～10‑3Ω.cm2Namely, the p-GaN material prepared by the method can reduce the ohmic contact resistivity by one to two orders of magnitude, and is beneficial to preparing high-quality semiconductor devices based on the p-GaN material.
Description
Technical Field
The invention relates to a method for realizing low-resistance ohmic contact between metal and P-type GaN, belonging to the technical field of semiconductor device manufacture.
Background
Group III nitrides, represented by GaN, are direct transition wide bandgap semiconductor materials, and GaN-based devices are increasingly widely used with the development of GaN-based semiconductor materials. However, many problems still remain to be solved in the device fabrication process, especially in the preparation of ohmic contact of P-type GaN (P-GaN).
Ohmic contact means that the contact surface of the metal with the semiconductor does not create significant additional resistance and does not significantly change the equilibrium carrier concentration within the semiconductor. Electrically, the contact resistance of an ideal ohmic contact should be small compared to the semiconductor sample or device, and when current flows through the ohmic contact, the voltage drop across it is much smaller than the voltage drop of the semiconductor sample or device itself, and the contact does not affect the current-voltage characteristics of the device.
In GaN-based devices, it is difficult to fabricate ohmic contact electrodes on P-type GaN for two reasons:
on one hand, it is difficult to grow heavily doped P-GaN material, and many P-type semiconductors realize a high concentration P-type layer by heavy doping to obtain ideal ohmic contact. In a p-GaN system, the method is difficult to realize, because the current approach for obtaining the p-GaN is mainly realized by doping Mg element which is a commonly used p-type acceptor doping element, but the ionization probability of Mg at room temperature is very small, so that the hole concentration is much smaller than the acceptor concentration, and the formed Mg-H complex compound enables the GaN to present a high resistance state and is usually not enough to cause holes to tunnel through a Schottky barrier, the current research has few p-GaN concentrations which can meet the requirement of tunnel current, and therefore the tunnel current between the p-GaN concentration and a metal electrode is difficult to manufacture.
On the other hand, p-GaN has a very high work function (about 7.5eV), the available metal electrode materials are limited, and the metal with the highest work function is Pt (about 5.65eV), which makes the schottky barrier between p-GaN and metal very large and makes it difficult to form ohmic contact.
Therefore, researchers have devised various ways to reduce the resistance of p-GaN ohmic contacts. In the selection of metal electrode materials, both Mori et al and Ishikawa et al believe that good ohmic contact can be obtained using metals with large work functions in contact with p-GaN; in the surface pretreatment scheme, because a natural insulating oxide layer is usually arranged on the surface of the GaN, the barrier height of about 0.2eV is increased, the surface oxide layer is removed by a chemical corrosion surface pretreatment method before metal deposition, but the effect is not obvious. In the alloying process, since the metal not alloyed with GaN is typically in schottky contact, the deposited material must be thermally annealed. Although the contact resistance can be reduced by high-temperature annealing, defects caused by annealing act as non-radiative recombination centers and carrier tunneling channels, so that phenomena such as electric leakage and the like can be caused, and the performance and reliability of the device are influenced.
The contact of p-GaN and metal involves complex physical processes such as the distribution of interface states and the distribution of interface carriers. Therefore, how to realize the low-resistance ohmic contact between the metal and the p-GaN surface still remains a problem to be solved.
Disclosure of Invention
In order to solve the problem that the ohmic contact resistivity of the metal and the surface of the P-GaN is overlarge in the manufacturing process of the semiconductor device at present, the invention provides a method for realizing low-resistance ohmic contact between the metal and the P-type GaN, which comprises the following steps: and (3) before depositing a metal electrode on the surface of the P-GaN epitaxial wafer, treating the surface of the P-GaN epitaxial wafer by adopting a fluorine plasma treatment method.
Specifically, the method for processing the surface of the P-GaN epitaxial wafer by using the fluorine plasma processing method includes:
and (3) placing the cleaned p-GaN epitaxial wafer into a fluorine plasma cavity for processing for 30-50 s, wherein the temperature of the fluorine plasma cavity is 200-300 ℃, and the power is 500-600W.
Specifically, before the surface of the P-GaN epitaxial wafer is treated by the fluorine plasma treatment method, the method further includes: and cleaning the surface of the P-GaN epitaxial wafer by using an HF solution and washing the surface of the P-GaN epitaxial wafer by using deionized water.
Specifically, the fluorine plasma is prepared by adopting an inductively coupled plasma source.
Specifically, the metal electrode adopts metal with work function higher than 4.5 eV.
Specifically, the metal includes Ni, Au, Al, and Pt.
Specifically, the thickness of the metal electrode is more than 5 nm.
The application also claims the application of the method for realizing the low-resistance ohmic contact between the metal and the P-type GaN in the process of depositing the metal electrode by the semiconductor material.
The present application also claims a semiconductor device that employs the above-described method of achieving low resistance ohmic contact between metal and P-type GaN to deposit a metal electrode during fabrication.
The application also claims the application of the method for realizing the low-resistance ohmic contact between the metal and the P-type GaN in the preparation of semiconductor devices.
The invention has the beneficial effects that:
the surface of the P-GaN epitaxial wafer is processed by adopting a fluorine plasma processing method before the metal electrode is deposited on the surface of the P-GaN epitaxial wafer, and then the metal electrode is deposited, so that good ohmic contact between metal and the P-GaN is realized. As can be seen from the measurements, the contact interface between the metal prepared by the method provided by the application and the p-GaN can realize about 10-4Ω.cm2While the prior art prepared metal and p-GaN material obtain an ohmic contact resistivity of about 10-2～10-3Ω.cm2. Therefore, the p-GaN material prepared by the method provided by the application reduces the ohmic contact resistivity of the p-GaN material by one to two orders of magnitude, namely, realizes good ohmic contact between metal and p-GaN.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart of depositing a metal electrode on the surface of a p-GaN epitaxial wafer.
FIG. 2 is a graph comparing the band diagram of a metal to p-GaN contact band after treatment by the method of the invention with the band diagram of a metal to p-GaN contact band without treatment by the method of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The technical terms are first explained as follows:
fermi level: the highest energy level of electrons filled in a solid energy band at the absolute zero temperature is referred to, and for metals, the highest energy level occupied by electrons at the absolute zero temperature is the Fermi level.
Fermi level pinning effect: the effect that the fermi level does not change in position with doping or the like is called a pinning effect of the fermi level.
The Fermi level de-pinning is that when the density of p-GaN interface states is high, the Fermi surface cannot rise or fall, and the Fermi level of metal is pinned at a fixed position.
Interface state: the interface state is generally classified into two types, i.e., a donor state and an acceptor state.
Donor state: the energy level is electrically neutral when occupied by an electron and positively charged when released, and is called a donor-type surface state (donor state); the donor state corresponds to an acceptor state, which is a surface state called an acceptor type, in which the energy level is electrically neutral when empty and negatively charged when accepting electrons.
Contact barrier: the contact barrier, also called the contact potential difference, prevents electrons from continuing to diffuse toward each other, and only when a forward voltage is applied does this "diffusion" continue to produce current. The contact barrier between metal and semiconductor is a "schottky barrier". As with the contact between semiconductors, PN junctions, space charge regions (depletion layers), and contact barriers can form between metals and semiconductors; unlike the contacts between semiconductors: the space charge region (depletion layer) of the "schottky barrier" is particularly thin on one side of the metal.
Conduction band: free electrons or valence electrons.
The first embodiment is as follows:
the embodiment provides a method for realizing low-resistance ohmic contact between metal and P-type GaN, which is characterized in that in the process of contacting the metal and the P-GaN, fluorine plasma is adopted to treat the surface of the P-GaN, the interface state of the surface of the P-GaN is repaired by utilizing the extremely strong electronegativity of fluorine, the Fermi level is de-pinned, and good ohmic contact between the metal and the P-GaN is realized in the subsequent deposition process, namely, the low-resistance ohmic contact is realized.
Before the p-GaN surface is treated with fluorine plasma, the fermi level of the metal is pinned about one third below the conduction band due to the high density of donor states present on the GaN surface. After the p-GaN surface is treated by the fluorine plasma, fluorine positive ions rapidly obtain electrons on the GaN surface by utilizing the strong electronegativity of the fluorine plasma, so that a depletion layer is widened and the Fermi level is de-pinned and is lower than the Fermi level of the p-GaN surface, thereby reducing the contact potential barrier between metal and the p-GaN surface and forming good ohmic contact. As shown in FIG. 2, EFm1Is a metal Fermi level which is not treated by plasma and is pinned at a higher position, namely a higher barrier difference, and EFm2The Fermi level formed by metal contact after plasma treatment reduces contact potential barrier due to de-pinning effect, and good ohmic contact is easy to form.
Referring to fig. 1, a method for realizing low-resistance ohmic contact between metal and P-type GaN includes the following specific steps:
s1, cleaning the surface of a P-GaN epitaxial wafer of a metal electrode to be deposited by using an HF solution and washing with deionized water;
s2, the P-GaN epitaxial wafer with the cleaned surface is placed into a fluorine plasma cavity for treatment for 30-50 s, wherein the temperature of the fluorine plasma cavity is 200-300 ℃, and the power is 500-600W.
Wherein, the fluorine plasma is prepared by adopting an inductively coupled plasma source.
S3, preparing a metal electrode with a certain size on the surface of the p-GaN epitaxial wafer treated by the fluorine plasma through a mask or a photoetching technology by using an electron beam evaporation technology, and carrying out thermal annealing to form ohmic contact between metal and p-GaN;
wherein, the electrode metal is metal with higher work function such as Ni, Au, etc., and the thickness of the metal electrode is more than 5 nm.
And (3) performing thermal annealing in a nitrogen atmosphere after evaporating the metal electrode by adopting an electron beam evaporation technology, wherein the annealing time is 10min, and the annealing temperature is 550 ℃.
In order to verify that the method provided by the application can realize low-resistance ohmic contact between metal and P-type GaN, the application also prepares a Ti/Al/Ni/Au ohmic contact transmission line model test structure, researches the square resistance and the specific contact resistivity by testing the variable temperature current-voltage characteristic between the metal and the P-type GaN, measures the contact resistivity of the P-type GaN material obtained by processing, and obtains the ohmic contact resistivity of about 10 by actually measuring the P-type GaN material prepared by different processes in the prior art-2～10-3Ω.cm2The P-type GaN material treated by the method can realize about 10-4Ω.cm2Contact resistivity of (2).
As known to those skilled in the art, it is very important to implement a low-resistance ohmic contact for a device such as a laser diode that operates at a high injection current density, and in other electronic devices, a good ohmic contact can also effectively reduce the power consumption of the device.
The ohmic contact resistivity of the semiconductor device prepared by the existing P-type GaN material is high, so that the tunnel current of the semiconductor device is small, and the semiconductor device cannot be applied to the scene needing high-current injection density.
Example two
The embodiment provides a method for realizing low-resistance ohmic contact between metal and P-type GaN, which is characterized in that before a metal electrode is deposited on the surface of a P-GaN epitaxial wafer, the surface of the P-GaN epitaxial wafer is processed by adopting a fluorine plasma processing method, and then the metal electrode is deposited after the processing, so that the low-resistance ohmic contact between the metal and the P-type GaN is realized.
Specifically, an epitaxial wafer is cleaned, and is patterned by photoetching by adopting a positive photoresist mask technology to form a P-pad pattern, an N-pad pattern or a source/drain electrode pattern.
And then, the P-GaN epitaxial wafer with the P-pad and N-pad patterns or the source/drain electrode patterns is placed into a fluorine plasma cavity for treatment for 30s, wherein the temperature of the fluorine plasma cavity is 240 ℃, and the power is 500W.
And then, preparing a metal electrode with a certain size on the surface of the p-GaN epitaxial wafer treated by the fluorine plasma through a mask or a photoetching technology by utilizing an electron beam evaporation technology, and carrying out thermal annealing to form ohmic contact between metal and the p-GaN material.
Wherein the certain size is a circular electrode with the diameter of 55 microns.
The temperature-variable current-voltage characteristic is tested through a Ti/Al/Ni/Au ohmic contact transmission line model test structure to study the square resistance and the specific contact resistivity, and the ohmic contact resistivity is measured to be 7.2 multiplied by 10-4Ω.cm2。
EXAMPLE III
The embodiment provides a method for realizing low-resistance ohmic contact between metal and P-type GaN, which is characterized in that before a metal electrode is deposited on the surface of a P-GaN epitaxial wafer, the surface of the P-GaN epitaxial wafer is processed by adopting a fluorine plasma processing method, and then the metal electrode is deposited after the processing, so that the low-resistance ohmic contact between the metal and the P-type GaN is realized.
The difference from the second embodiment is that the P-GaN epitaxial wafer with the P-pad and N-pad patterns or the source/drain electrode patterns formed thereon is placed in a fluorine plasma chamber for processing for 30s, wherein the temperature of the fluorine plasma chamber is 300 ℃, and the power is 550W.
The obtained p-GaN-based material is used for preparing a Ti/Al/Ni/Au ohmic contact transmission line model test structure, and the ohmic contact resistivity of the Ti/Al/Ni/Au ohmic contact transmission line model test structure is measured by a method for testing the variable temperature current-voltage characteristic to research the square resistance and the specific contact resistivity of the Ti/Al/Ni/Au ohmic contact transmission line model test structure-4Ω.cm2。
The method for realizing the low-resistance ohmic contact between the metal and the P-type GaN adopts the fluorine plasma processing method to process the surface of the P-GaN epitaxial wafer before the metal electrode is deposited on the surface of the P-GaN epitaxial wafer,and depositing a metal electrode after treatment to realize low-resistance ohmic contact between metal and the P-type GaN. As can be seen from measurement, the p-GaN material prepared by the method can realize about 10-4Ω.cm2While the p-GaN material prepared by the prior art obtains a contact resistivity of about 10-2～10-3Ω.cm2That is, the p-GaN material prepared by the method can reduce the ohmic contact resistivity by one to two orders of magnitude, which is helpful for preparing high quality p-based materials
A semiconductor device of GaN material.
Some steps in the embodiments of the present invention may be implemented by software, and the corresponding software program may be stored in a readable storage medium, such as an optical disc or a hard disk.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A method for achieving low resistance ohmic contact between a metal and P-type GaN, the method comprising: and (3) before depositing a metal electrode on the surface of the P-GaN epitaxial wafer, treating the surface of the P-GaN epitaxial wafer by adopting a fluorine plasma treatment method.
2. The method of claim 1, wherein the fluorine plasma treatment is used for treating the surface of the P-GaN epitaxial wafer, and comprises the following steps:
and (3) placing the cleaned p-GaN epitaxial wafer into a fluorine plasma cavity for processing for 30-50 s, wherein the temperature of the fluorine plasma cavity is 200-300 ℃, and the power is 500-600W.
3. The method according to claim 1 or 2, wherein before the surface of the P-GaN epitaxial wafer is treated by the fluorine plasma treatment method, the method further comprises: and cleaning the surface of the P-GaN epitaxial wafer by using an HF solution and washing the surface of the P-GaN epitaxial wafer by using deionized water.
4. The method according to any one of claims 1 to 3, wherein the fluorine plasma is produced using an inductively coupled plasma source.
5. The method according to any one of claims 1 to 4, wherein the metal electrode is a metal having a work function higher than 4.5 eV.
6. The method of claim 5, wherein the metal comprises Ni, Au, Al, and Pt.
7. The method of any of claims 1-6, wherein the metal electrode is greater than 5nm thick.
8. Use of a method according to any one of claims 1 to 7 for achieving a low resistance ohmic contact between a metal and P-type GaN in the deposition of a metal electrode on a semiconductor material.
9. A semiconductor device characterized in that during the fabrication process of said semiconductor device, a metal electrode is deposited by the method for realizing low resistance ohmic contact between metal and P-type GaN as claimed in any one of claims 1 to 7.
10. Use of a method according to any of claims 1 to 7 for achieving a low resistance ohmic contact between a metal and P-type GaN in the manufacture of a semiconductor device.
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Application publication date: 20200317 |