CN110880550A - Coating equipment and method for precursor solution containing surfactant - Google Patents
Coating equipment and method for precursor solution containing surfactant Download PDFInfo
- Publication number
- CN110880550A CN110880550A CN201811028149.5A CN201811028149A CN110880550A CN 110880550 A CN110880550 A CN 110880550A CN 201811028149 A CN201811028149 A CN 201811028149A CN 110880550 A CN110880550 A CN 110880550A
- Authority
- CN
- China
- Prior art keywords
- coating
- polyoxyethylene
- polyoxyethylene ether
- ether
- die head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000000576 coating method Methods 0.000 title claims abstract description 306
- 239000011248 coating agent Substances 0.000 title claims abstract description 299
- 239000002243 precursor Substances 0.000 title claims abstract description 170
- 239000004094 surface-active agent Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000243 solution Substances 0.000 claims abstract description 129
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000010409 thin film Substances 0.000 claims abstract description 73
- 239000010408 film Substances 0.000 claims abstract description 62
- 239000011259 mixed solution Substances 0.000 claims abstract description 51
- 238000002347 injection Methods 0.000 claims abstract description 32
- 239000007924 injection Substances 0.000 claims abstract description 32
- 239000002994 raw material Substances 0.000 claims abstract description 31
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 213
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 213
- -1 cation halide Chemical class 0.000 claims description 105
- 229920001214 Polysorbate 60 Polymers 0.000 claims description 42
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 33
- 230000005525 hole transport Effects 0.000 claims description 32
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 31
- 150000002191 fatty alcohols Chemical class 0.000 claims description 30
- 239000002904 solvent Substances 0.000 claims description 27
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- 229910001507 metal halide Inorganic materials 0.000 claims description 10
- 150000005309 metal halides Chemical class 0.000 claims description 10
- 238000007664 blowing Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000007613 environmental effect Effects 0.000 claims description 6
- 229920001213 Polysorbate 20 Polymers 0.000 claims description 5
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 claims description 5
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 claims description 5
- 238000012805 post-processing Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- QLAJNZSPVITUCQ-UHFFFAOYSA-N 1,3,2-dioxathietane 2,2-dioxide Chemical compound O=S1(=O)OCO1 QLAJNZSPVITUCQ-UHFFFAOYSA-N 0.000 claims description 2
- IQDGSYLLQPDQDV-UHFFFAOYSA-N dimethylazanium;chloride Chemical compound Cl.CNC IQDGSYLLQPDQDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 41
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 20
- 235000014113 dietary fatty acids Nutrition 0.000 claims 20
- 239000000194 fatty acid Substances 0.000 claims 20
- 229930195729 fatty acid Natural products 0.000 claims 20
- 125000000217 alkyl group Chemical group 0.000 claims 19
- 229910052708 sodium Inorganic materials 0.000 claims 17
- 239000011734 sodium Substances 0.000 claims 17
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 14
- 150000004665 fatty acids Chemical class 0.000 claims 14
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 claims 14
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims 13
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims 13
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 claims 10
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims 8
- 229920001451 polypropylene glycol Polymers 0.000 claims 8
- 150000005215 alkyl ethers Chemical class 0.000 claims 7
- 239000002202 Polyethylene glycol Substances 0.000 claims 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims 6
- 229920001223 polyethylene glycol Polymers 0.000 claims 6
- 235000013162 Cocos nucifera Nutrition 0.000 claims 5
- 244000060011 Cocos nucifera Species 0.000 claims 5
- 229910019142 PO4 Inorganic materials 0.000 claims 5
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims 5
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 claims 5
- 239000010452 phosphate Substances 0.000 claims 5
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 4
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims 4
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims 4
- 150000001412 amines Chemical class 0.000 claims 4
- 235000019270 ammonium chloride Nutrition 0.000 claims 4
- 239000004359 castor oil Substances 0.000 claims 4
- 235000019438 castor oil Nutrition 0.000 claims 4
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims 4
- 229920000570 polyether Polymers 0.000 claims 4
- 239000000600 sorbitol Substances 0.000 claims 4
- 239000003760 tallow Substances 0.000 claims 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 3
- 229930006000 Sucrose Natural products 0.000 claims 3
- 229920001400 block copolymer Polymers 0.000 claims 3
- 150000002148 esters Chemical class 0.000 claims 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims 3
- 239000002736 nonionic surfactant Substances 0.000 claims 3
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 3
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims 3
- 229910052700 potassium Inorganic materials 0.000 claims 3
- 239000011591 potassium Substances 0.000 claims 3
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims 3
- 239000005720 sucrose Substances 0.000 claims 3
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 claims 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims 2
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims 2
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 claims 2
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 239000003570 air Substances 0.000 claims 2
- 150000003973 alkyl amines Chemical class 0.000 claims 2
- 125000002877 alkyl aryl group Chemical group 0.000 claims 2
- 150000008055 alkyl aryl sulfonates Chemical class 0.000 claims 2
- 150000004996 alkyl benzenes Chemical class 0.000 claims 2
- 239000002280 amphoteric surfactant Substances 0.000 claims 2
- 239000003945 anionic surfactant Substances 0.000 claims 2
- 229940077388 benzenesulfonate Drugs 0.000 claims 2
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 claims 2
- 229960003237 betaine Drugs 0.000 claims 2
- 239000003093 cationic surfactant Substances 0.000 claims 2
- SXPWTBGAZSPLHA-UHFFFAOYSA-M cetalkonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 SXPWTBGAZSPLHA-UHFFFAOYSA-M 0.000 claims 2
- 229960000228 cetalkonium chloride Drugs 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 claims 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims 2
- 229940055577 oleyl alcohol Drugs 0.000 claims 2
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 claims 2
- 229920000151 polyglycol Polymers 0.000 claims 2
- 239000010695 polyglycol Substances 0.000 claims 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims 2
- HOVAGTYPODGVJG-UVSYOFPXSA-N (3s,5r)-2-(hydroxymethyl)-6-methoxyoxane-3,4,5-triol Chemical compound COC1OC(CO)[C@@H](O)C(O)[C@H]1O HOVAGTYPODGVJG-UVSYOFPXSA-N 0.000 claims 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 claims 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 claims 1
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 claims 1
- QAQSNXHKHKONNS-UHFFFAOYSA-N 1-ethyl-2-hydroxy-4-methyl-6-oxopyridine-3-carboxamide Chemical compound CCN1C(O)=C(C(N)=O)C(C)=CC1=O QAQSNXHKHKONNS-UHFFFAOYSA-N 0.000 claims 1
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims 1
- CBJZFQUYNWMEMC-UHFFFAOYSA-N 18-methyl-N-octadecylnonadecan-1-amine Chemical compound CC(CCCCCCCCCCCCCCCCCNCCCCCCCCCCCCCCCCCC)C CBJZFQUYNWMEMC-UHFFFAOYSA-N 0.000 claims 1
- JKTAIYGNOFSMCE-UHFFFAOYSA-N 2,3-di(nonyl)phenol Chemical compound CCCCCCCCCC1=CC=CC(O)=C1CCCCCCCCC JKTAIYGNOFSMCE-UHFFFAOYSA-N 0.000 claims 1
- CYEJMVLDXAUOPN-UHFFFAOYSA-N 2-dodecylphenol Chemical compound CCCCCCCCCCCCC1=CC=CC=C1O CYEJMVLDXAUOPN-UHFFFAOYSA-N 0.000 claims 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 claims 1
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 claims 1
- LKKXDHVWTFAHLI-UHFFFAOYSA-N 2-methyloxirane;oxirane;propane-1,2-diol Chemical compound C1CO1.CC1CO1.CC(O)CO LKKXDHVWTFAHLI-UHFFFAOYSA-N 0.000 claims 1
- GCYHRYNSUGLLMA-UHFFFAOYSA-N 2-prop-2-enoxyethanol Chemical compound OCCOCC=C GCYHRYNSUGLLMA-UHFFFAOYSA-N 0.000 claims 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 claims 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- LVDKZNITIUWNER-UHFFFAOYSA-N Bronopol Chemical compound OCC(Br)(CO)[N+]([O-])=O LVDKZNITIUWNER-UHFFFAOYSA-N 0.000 claims 1
- ZDQWESQEGGJUCH-UHFFFAOYSA-N Diisopropyl adipate Chemical compound CC(C)OC(=O)CCCCC(=O)OC(C)C ZDQWESQEGGJUCH-UHFFFAOYSA-N 0.000 claims 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 claims 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 claims 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims 1
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 claims 1
- AOMUHOFOVNGZAN-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)dodecanamide Chemical compound CCCCCCCCCCCC(=O)N(CCO)CCO AOMUHOFOVNGZAN-UHFFFAOYSA-N 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- QDICUFOZXRJLMN-UHFFFAOYSA-N OCCN(CCO)CCO.CCCCCCCCCCCCCCCCCC(=O)OCCCCCCCCCCCC Chemical compound OCCN(CCO)CCO.CCCCCCCCCCCCCCCCCC(=O)OCCCCCCCCCCCC QDICUFOZXRJLMN-UHFFFAOYSA-N 0.000 claims 1
- 239000005642 Oleic acid Substances 0.000 claims 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims 1
- 239000004698 Polyethylene Substances 0.000 claims 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 claims 1
- HSROYTUBZOKEEV-UHFFFAOYSA-N S(=O)(=O)(OCCCCCCCCCCCC)O.C(CCCCCCCCCCC)[Na] Chemical compound S(=O)(=O)(OCCCCCCCCCCCC)O.C(CCCCCCCCCCC)[Na] HSROYTUBZOKEEV-UHFFFAOYSA-N 0.000 claims 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 claims 1
- 239000004147 Sorbitan trioleate Substances 0.000 claims 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 claims 1
- XZAGBDSOKNXTDT-UHFFFAOYSA-N Sucrose monopalmitate Chemical compound CCCCCCCCCCCCCCCC(O)=O.OC1C(O)C(CO)OC1(CO)OC1C(O)C(O)C(O)C(CO)O1 XZAGBDSOKNXTDT-UHFFFAOYSA-N 0.000 claims 1
- IJCWFDPJFXGQBN-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-octadecanoyloxyoxolan-2-yl]-2-octadecanoyloxyethyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCCCC IJCWFDPJFXGQBN-RYNSOKOISA-N 0.000 claims 1
- KGUHOFWIXKIURA-VQXBOQCVSA-N [(2r,3s,4s,5r,6r)-6-[(2s,3s,4s,5r)-3,4-dihydroxy-2,5-bis(hydroxymethyl)oxolan-2-yl]oxy-3,4,5-trihydroxyoxan-2-yl]methyl dodecanoate Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](COC(=O)CCCCCCCCCCC)O[C@@H]1O[C@@]1(CO)[C@@H](O)[C@H](O)[C@@H](CO)O1 KGUHOFWIXKIURA-VQXBOQCVSA-N 0.000 claims 1
- FOLJTMYCYXSPFQ-CJKAUBRRSA-N [(2r,3s,4s,5r,6r)-6-[(2s,3s,4s,5r)-3,4-dihydroxy-5-(hydroxymethyl)-2-(octadecanoyloxymethyl)oxolan-2-yl]oxy-3,4,5-trihydroxyoxan-2-yl]methyl octadecanoate Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](COC(=O)CCCCCCCCCCCCCCCCC)O[C@@H]1O[C@@]1(COC(=O)CCCCCCCCCCCCCCCCC)[C@@H](O)[C@H](O)[C@@H](CO)O1 FOLJTMYCYXSPFQ-CJKAUBRRSA-N 0.000 claims 1
- RKZXQQPEDGMHBJ-LIGJGSPWSA-N [(2s,3r,4r,5r)-2,3,4,5,6-pentakis[[(z)-octadec-9-enoyl]oxy]hexyl] (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC RKZXQQPEDGMHBJ-LIGJGSPWSA-N 0.000 claims 1
- DRGBEXMCRGJNGZ-UHFFFAOYSA-N [NH4+].[NH4+].[Cl-].[Cl-].CC(C)(C)C(C)(C)C Chemical compound [NH4+].[NH4+].[Cl-].[Cl-].CC(C)(C)C(C)(C)C DRGBEXMCRGJNGZ-UHFFFAOYSA-N 0.000 claims 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/06—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying two different liquids or other fluent materials, or the same liquid or other fluent material twice, to the same side of the work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention relates to a coating device of a precursor solution containing a surfactant, which comprises a coating platform and a conveying device, wherein a front coating device, a rear coating device, a front post-treatment device and a rear post-treatment device are sequentially arranged above the coating platform, the front coating device and the rear coating device respectively comprise a front coating die head, a rear coating die head lifting platform, a front injection pump, a rear injection pump, a front raw material bottle and a rear raw material bottle, a divalent precursor mixed solution containing the surfactant is contained in the front raw material bottle, and a monovalent precursor solution is contained in the rear raw material bottle; the substrate to be coated placed on the coating platform is coated by the front coating die head under the driving of the conveying device, and then is conveyed to the front post-treatment device, the rear coating die head and the rear post-treatment device by the conveying device in sequence. The invention also discloses a using method of the coating equipment. The invention improves the coverage rate of the coating film and the flatness of the surface of the coating film, and obtains the perovskite thin film with more uniform film thickness distribution.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to coating equipment and a coating method for a precursor solution containing a surfactant.
Background
At present, the perovskite solar cell is mainly prepared by a spraying method, a blade method, a slit coating method, an ink printing method, an ink-jet printing method and the like. Slit Die Coating (slit Die Coating) is one of the simplest methods for preparing perovskite solar cells in large scale in industrialization, and has the advantages of short preparation process period, raw material saving, simple process operation and the like. However, the perovskite solar cell prepared by the traditional slit coating has the defects of more holes, serious uneven film thickness of the thin film and the like, and the large-area preparation and the commercial application of the slit coating for the perovskite solar cell are seriously restricted.
The general perovskite solar cell fabrication process includes a one-step process and a two-step process. In the one-step perovskite solution film forming process, the crystallization speed of perovskite is high and the morphology of the perovskite film is difficult to control. Compared with a one-step method, the two-step method for preparing the perovskite thin film has more technological methods and adjusting means. The two-step process is to first prepare a divalent precursor thin film layer on a substrate by using a divalent precursor (also called divalent metal halide) solution of perovskite, and then prepare a monovalent precursor thin film layer by using a monovalent precursor (also called monovalent cation halide) solution on the basis. In the two-step method, the reaction degree of the perovskite thin film and the performance of the perovskite thin film can be effectively regulated and controlled by regulating and controlling the film forming process of the divalent metal halide and the deposition process of the monovalent cation halide on the divalent metal halide thin film.
In chinese patent publication No. CN106328813A entitled high stability cesium-doped perovskite type solar cell and method for manufacturing the same, a method for manufacturing a perovskite layer using a two-step process is disclosed. The patent adopts a spin-coating method to dope cesium into a perovskite light absorption layer, and obtains dry PbI by deposition2Coating the film with an isopropanol solution of cesium acetate and MAI, and heating with PbI2The reaction is carried out, and the problems that the crystallization and the film forming of the perovskite are influenced by byproducts generated by DMF decomposition are avoided. However, spin coating cannot be used to coat large areas of perovskite solar cells and is lacking in effectivenessSolvent content of the valence metal halide precursor is adjusted, and the valence metal halide precursor is not beneficial to reacting with monovalent cation halide to obtain the perovskite solar thin film cell with excellent performance.
As shown in fig. 1, a schematic cross-section of each layer of a conventional perovskite solution-coated battery is shown, in which 11 is a substrate, an oleophilic electron/hole transport layer 12-2 is prepared on the conductive layer 11, and the oleophilic electron/hole transport layer 12-2 is prepared using, for example, any one of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] (PTAA) and poly (3-hexylthiophene-2, 5-diyl) (P3 HT). 16 is a coating layer of the perovskite solution. Under normal coating conditions, the perovskite solution is hydrophilic, is difficult to infiltrate into an oleophilic electron/hole transport layer, cannot be paved on the surface of the electron/hole transport layer, and is easy to generate a lot of necking after being coated. If at higher preparation temperatures, for example: by the temperature of 100 ℃ and 180 ℃, a plurality of pinholes are easily generated, which not only seriously affects the quality of the perovskite battery, but also reduces the conversion efficiency of the perovskite battery.
Disclosure of Invention
The invention aims to provide a coating device and a coating method of a precursor solution containing a surfactant, which can improve the coverage rate of a coating film and the flatness of the surface of the coating film and obtain a perovskite thin film with more uniform film thickness distribution.
The invention is realized in such a way, and provides a coating device of a precursor solution containing a surfactant, which comprises a coating platform, a coating device, a post-treatment device and a conveying device, wherein the coating device comprises a front coating device and a rear coating device, the post-treatment device comprises a front post-treatment device and a rear post-treatment device, the front coating device, the front post-treatment device, the rear coating device and the rear post-treatment device are respectively arranged above the coating platform in sequence, the front coating device comprises a front coating die head, a front die head lifting platform, a front injection pump and a front raw material bottle, the rear coating device comprises a rear coating die head, a rear die head lifting platform, a rear injection pump and a rear raw material bottle, the front coating die head and the rear coating die head are respectively arranged on the front die head lifting platform and the rear die head lifting platform which correspond to the front coating die head and the rear die head lifting platform and are both, the front coating die head is communicated with a front injection pump through a front conduit, the front injection pump is communicated with a front raw material bottle through a front pipeline, the rear coating die head is communicated with a rear injection pump through a rear conduit, the rear injection pump is communicated with a rear raw material bottle through a rear pipeline, a divalent precursor mixed solution of perovskite containing a surfactant is contained in the front raw material bottle, and a monovalent precursor solution of perovskite is contained in the rear raw material bottle; the front die head lifting platform and the rear die head lifting platform are driven by the conveying device to move relative to the coating platform, and a substrate to be coated placed on the coating platform is coated by the front coating die head, conveyed to the front post-treatment device by the conveying device for post-treatment, then conveyed to the rear coating die head for coating, and conveyed to the rear post-treatment device for post-treatment.
The present invention is achieved by providing a method for using the apparatus for coating a precursor solution containing a surfactant as described above, including the steps of:
firstly, injecting a prepared divalent precursor mixed solution and a monovalent precursor solution into a front raw material bottle and a rear raw material bottle respectively;
secondly, placing the substrate to be coated on a coating platform, starting a front injection pump of a front coating device, starting a conveying device, conveying a divalent precursor mixed solution to a front coating die head through a front conduit, and performing relative movement between a front die head lifting platform and the coating platform under the driving of the conveying device, wherein the front coating die head performs first coating on the surface of the substrate;
thirdly, starting the front post-treatment device, and conveying the substrate coated with the wet film of the divalent precursor mixed solution to the front post-treatment device by the conveying device for post-treatment so as to prepare a semi-dry film containing the divalent precursor mixed solution on the surface of the substrate;
fourthly, a rear injection pump of the rear coating device is started, the monovalent precursor solution is conveyed to a rear coating die head through a rear conduit, the conveying device is started to convey the substrate coated with the divalent precursor mixed solution to the rear coating die head, meanwhile, the rear die head lifting platform and the coating platform move relatively under the driving of the conveying device, and the rear coating die head coats the surface of the substrate for the second time;
and fifthly, starting the rear post-treatment device, conveying the substrate coated with the monovalent precursor solution wet film to the rear post-treatment device by the conveying device for post-treatment, and preparing the perovskite thin film layer on the surface of the substrate.
The present invention is achieved in this way, and provides a method for manufacturing a perovskite solar cell, characterized in that the method for manufacturing a perovskite solar cell uses the coating apparatus for a precursor solution containing a surfactant as described above, and comprises the steps of:
s1, respectively injecting the prepared divalent precursor mixed solution and monovalent precursor solution into the front raw material bottle and the rear raw material bottle;
s2, placing the substrate with the conductive layer and the electron/hole transport layer prepared on the surface on a coating platform, starting a front injection pump of a front coating device, starting a conveying device, conveying a divalent precursor mixed solution to a front coating die head through a front conduit, and carrying out relative movement between a front die head lifting platform and the coating platform under the driving of the conveying device, wherein the front coating die head is used for carrying out first coating on the surface of the substrate;
s3, starting the front post-treatment device, and conveying the substrate coated with the wet film of the divalent precursor mixed solution to the front post-treatment device by the conveying device for post-treatment, so as to prepare a semi-dry film containing the divalent precursor mixed solution on the surface of the substrate;
s4, then, starting a rear injection pump of a rear coating device, conveying the monovalent precursor solution to a rear coating die head through a rear conduit, starting a conveying device to convey the substrate coated with the divalent precursor mixed solution to the rear coating die head, and simultaneously, under the driving of the conveying device, generating relative movement between a rear die head lifting platform and a coating platform, and performing secondary coating on the surface of the substrate by the rear coating die head;
s5, starting the post-treatment device, conveying the substrate coated with the monovalent precursor solution wet film to the post-treatment device by the conveying device for post-treatment, and preparing a perovskite thin film layer on the surface of the electron/hole transport layer of the substrate;
s6, continuously preparing a hole/electron transport layer and a back electrode layer on the surface of the perovskite thin film layer of the substrate until the perovskite solar cell is prepared.
The present invention has been achieved in such a manner as to provide a perovskite thin film layer, and is characterized in that the perovskite thin film layer is produced by using the apparatus for coating a precursor solution containing a surfactant as described above, or by using the method for producing a perovskite solar cell as described above.
Compared with the prior art, the coating equipment and the coating method of the precursor solution containing the surfactant, disclosed by the invention, have the advantages that the surfactant is added into the divalent precursor solution of the slit-type coated perovskite in the two-step method, so that the defects of shrinkage cavity caused by poor infiltration of the divalent precursor solution of the perovskite and the surface of the conveying layer of the substrate, pin holes caused by too fast volatilization of the solution, serious uneven film thickness caused by uneven distribution of the coating solution and the like are favorably reduced, the coverage rate of a coating film and the flatness of the surface of the coating film are improved, the perovskite thin film layer with more uniform film thickness distribution is obtained, and the efficiency of the perovskite solar cell is improved. The coating equipment and the method thereof are not only applied to the technical field of perovskite solar cells, but also widely applied to the technical field of organic solar cells, dye-sensitized solar cells and quantum dot solar cells.
Drawings
FIG. 1 is a schematic cross-sectional view of a prior art perovskite thin film layer after coating;
FIG. 2 is a schematic cross-sectional structure of a conventional perovskite solar cell;
FIG. 3 is a schematic perspective view of a preferred embodiment of an apparatus for coating a surfactant-containing perovskite solution according to the present invention;
FIG. 4 is a schematic view of the morphology of a perovskite thin film layer prepared by a prior art method;
FIG. 5 is a schematic cross-sectional view of a perovskite thin film layer produced after addition of a surfactant to a perovskite solution;
FIG. 6 is a topographical view of a first embodiment of a perovskite thin film layer prepared using the coating apparatus of the surfactant-containing perovskite solution of the present invention;
FIG. 7 is a topographical view of a second embodiment of a perovskite thin film layer prepared using the coating apparatus of the surfactant-containing perovskite solution of the present invention;
FIG. 8 is a topographical view of a third embodiment of a perovskite thin film layer of a coating apparatus employing a surfactant-containing perovskite solution of the present invention;
fig. 9 is a graph showing comparison of efficiencies after forming perovskite solar cells according to examples one to four of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 2 is a schematic cross-sectional structure diagram of a conventional perovskite solar cell. The conductive layer 11, the electron/hole transport layer 12, the perovskite thin film layer 13, the hole/electron transport layer 14 and the back electrode layer 15 are sequentially prepared on the substrate, wherein the most critical is the preparation of the perovskite thin film layer 13.
The present invention first discloses a coating apparatus for preparing a perovskite thin film layer 13, which is used to coat a surfactant-containing perovskite solution on an electron/hole transport layer 12 to make the perovskite thin film layer 13.
Referring to fig. 3, the preferred embodiment of the coating apparatus of the surfactant-containing precursor solution of the present invention comprises a coating platform 106, a coating device including a front coating device and a rear coating device, a post-treatment device including a front post-treatment device 105 and a rear post-treatment device 205, and a conveying device 107. A front coating device, a front post-treatment device 105, a rear coating device, and a rear post-treatment device 205 are respectively disposed in this order above the coating platform 106.
The front coating apparatus includes a front coating die 101, a front die lift 102, a front injection pump 104, and a front raw material bottle 109. The rear coating apparatus includes a rear coating die 201, a rear die lift 201, a rear injection pump 204, and a rear raw material bottle 209. The front coating die 101 and the rear coating die 201 are respectively arranged on the front die lifting platform 102 and the rear die lifting platform 202 corresponding to the front coating die 101 and the rear coating die 201 and are both positioned above the coating platform 106. The front die lift 102 and the rear die lift 202 are disposed on either side of the coating platform 106. The front coating die 101 communicates with a front injection pump 104 through a front conduit 103, and the front injection pump 104 communicates with a front stock bottle 109 through a front line 110. The rear coating die 201 is connected to a rear injection pump 204 through a rear duct 203, and the rear injection pump 204 is connected to a rear stock bottle 209 through a rear pipe 210.
The front raw material bottle 109 contains a divalent precursor mixed solution of a surfactant-containing perovskite, and the rear raw material bottle 209 contains a monovalent precursor solution of a perovskite. The front die lifting platform 102 and the rear die lifting platform 202 are driven by the conveying device 107 to move relative to the coating platform 106, and after a substrate 108 to be coated, which is placed on the coating platform 106, is coated by the front coating die 101, the substrate is conveyed to the front post-treatment device 105 by the conveying device 107 to be post-treated, then conveyed to the rear coating die 201 to be coated, and then conveyed to the rear post-treatment device 205 to be post-treated. The front and rear die lifters 102 and 202 adjust the height between the front and rear coating dies 101 and 201, respectively, and the substrate 208 to be coated.
Specifically, there are two assembly coupling relationships between the front and rear front die stages 102 and 202, the coating platform 106, and the conveyor 107. The first assembly coupling relationship is: the conveyor 107 drives the coating platform 106 to move, the front die head lifting platform 102 and the rear die head lifting platform 202 respectively keep static, and the front die head lifting platform 102 and the rear die head lifting platform 202 and the coating platform 106 are relatively moved. The second assembling connection relation is as follows: the conveyor 17 drives the front die lifting platform 102 and the rear die lifting platform 202 to move simultaneously, the coating platform 106 is kept static, and the front die lifting platform 102 and the rear die lifting platform 202 and the coating platform 106 move relatively.
Specifically, the front die head lifting table 102 and the rear die head lifting table 202 are respectively provided with a film forming device (not shown in the figure) for performing a film forming process on the wet film just coated on the surface of the substrate 108 within 0 to 60 seconds after the coating of the corresponding front coating die head 101 and rear coating die head 201 is finished. The film forming device comprises a heater, a blower or a suction fan, or a heater and a vacuum pump.
Specifically, the front and rear aftertreatment devices 105 and 205 each include a heater, a vacuum pump, and a closed chamber that facilitates opening and closing.
Specifically, the divalent precursor mixed solution of the surfactant-containing perovskite is a mixed solution obtained by mixing a divalent precursor solution with 0.05-5% by mass of a surfactant and stirring at a temperature of 10-100 ℃. The divalent precursor solution comprises a divalent metal halide BX2And a divalent precursor solvent; the monovalent precursor solution of the perovskite is obtained by mixing monovalent cation halide AX and a monovalent precursor solvent and stirring at the temperature of 10-100 ℃, wherein A is MA+、FA+、Cs+B is Pb2+、Sn2+、Ze2+At least one of (1), X is Cl-、Br-、I-At least one of (1). The concentration of the divalent precursor solution is 0.5-1.5mol/L, and the concentration of the monovalent precursor solution is 30-100 mg/ml.
Specifically, the divalent precursor solvent is at least one of N, N-Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), and γ -butyrolactone (GBL). The univalent precursor solvent is at least one of Isopropanol (IPA), ethanol (EtOH), gamma-butyrolactone (gamma-GBL) and propylene glycol monomethyl ether acetate (PMA).
Polyoxyethylene monooleate, dicocodioyl dimethyl ammonium chloride, dimethyl polyoxyethylene sorbitan methyl ammonium methosulfate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan fatty alcohol polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene sorbitan polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether.
The invention also discloses a use method of the coating equipment of the precursor solution containing the surfactant, which comprises the following steps:
in the first step, the prepared divalent precursor mixed solution and monovalent precursor solution are respectively injected into the front material bottle 109 and the rear material bottle 209.
In a second step, the substrate 108 to be coated is placed on the coating platform 106. The front injection pump 104 of the front coating apparatus is turned on, the transfer apparatus 107 is turned on, and the divalent precursor mixed solution is delivered to the front coating die 101 through the front conduit 103. Under the drive of the conveying device 107, relative movement is generated between the front die lifting platform 102 and the coating platform 106, and the front coating die 101 performs first coating on the surface of the substrate 108.
Third, the front post-treatment apparatus 105 is turned on, and the substrate 108 coated with the wet film of the divalent precursor mixed solution is transferred to the front post-treatment apparatus 105 by the transfer apparatus 107 to be post-treated, thereby preparing a semi-dry film containing the divalent precursor mixed solution on the surface of the substrate 108.
And fourthly, then, a rear injection pump 202 of the rear coating device is started, the monovalent precursor solution is conveyed to the rear coating die 201 through a rear conduit 203, the conveying device 107 is started to convey the substrate 108 coated with the divalent precursor mixed solution to the rear coating die 201, meanwhile, the rear die lifting platform 202 and the coating platform 106 are driven by the conveying device 107 to move relatively, and the rear coating die 201 performs secondary coating on the surface of the substrate 108.
In the fifth step, the post-treatment apparatus 205 is opened, and the substrate 108 coated with the wet film of the monovalent precursor solution is transported by the transport apparatus 107 to the post-treatment apparatus 205 for post-treatment, thereby preparing a perovskite thin film layer on the surface of the substrate 108.
The invention also discloses a preparation method of the perovskite solar cell, and the coating equipment of the precursor solution containing the surfactant is used in the preparation process of the perovskite solar cell, and comprises the following steps:
and S1, respectively injecting the prepared divalent precursor mixed solution and monovalent precursor solution into the front raw material bottle 109 and the rear raw material bottle 209.
S2, the substrate 108 with the conductive layer and the electron/hole transport layer already prepared on the surface is placed on the coating platform 106. The front injection pump 104 of the front coating apparatus is turned on, the transfer apparatus 107 is turned on, and the divalent precursor mixed solution is delivered to the front coating die 101 through the front conduit 103. Under the drive of the conveying device 107, relative movement is generated between the front die lifting platform 102 and the coating platform 106, and the front coating die 101 performs first coating on the surface of the substrate 108.
S3, the front post-treatment apparatus 105 is turned on, and the substrate 108 coated with the wet film of the divalent precursor mixed solution is transported by the conveyor 107 to the front post-treatment apparatus 105 for post-treatment, thereby preparing a semi-dry film containing the divalent precursor mixed solution on the surface of the substrate 108.
S4, then the rear injection pump 202 of the rear coating device is started, the monovalent precursor solution is delivered to the rear coating die 201 through the rear conduit 203, the conveyor 107 is started to deliver the substrate 108 coated with the divalent precursor mixed solution to the rear coating die 201, meanwhile, the rear die lifting platform 202 and the coating platform 106 are driven by the conveyor 107 to move relatively, and the rear coating die 201 performs a second coating on the surface of the substrate 108.
S5, starting the post-treatment device 205, and transporting the substrate 108 coated with the wet film of monovalent precursor solution to the post-treatment device 205 by the transport device 107 for post-treatment, so as to prepare a perovskite thin film layer on the surface of the electron/hole transport layer of the substrate 108.
S6, continuously preparing a hole/electron transport layer and a back electrode layer on the surface of the perovskite thin film layer of the substrate 108 until the perovskite solar cell is prepared.
Specifically, in S1, the divalent precursor mixed solution of the surfactant-containing perovskite is a mixed solution obtained by mixing a divalent precursor solution with 0.05 to 5% by mass of a surfactant and stirring at a temperature of 10 to 100 ℃. The divalent precursor solution comprises a divalent metal halide BX2And a divalent precursor solvent. The monovalent precursor solution of the perovskite is obtained by mixing monovalent cation halide AX and a monovalent precursor solvent and stirring at the temperature of 10-100 ℃, wherein A is MA+、FA+、Cs+B is Pb2+、Sn2+、Ze2+At least one of (1), X is Cl-、Br-、I-At least one of (1). The concentration of the divalent precursor solution is 0.5-1.5mol/L, and the concentration of the monovalent precursor solution is 30-100 mg/ml.
Specifically, the divalent precursor solvent is at least one of N, N-Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), and γ -butyrolactone (GBL). The univalent precursor solvent is at least one of Isopropanol (IPA), ethanol (EtOH), gamma-butyrolactone (gamma-GBL) and propylene glycol monomethyl ether acetate (PMA). The surfactant is nonionic, cationic, anionic or amphoteric.
Specifically, in S2 and S4, the operation setting parameter conditions of the front coating die 101 and the rear coating die 201 are: the width of the slit is 20-300um, and the amount of coating liquid is 0.2-2ul/cm2The coating speed is 0.5-50cm/s, the tapping temperature of the front coating die 101 is 15-150 ℃, the tapping temperature of the rear coating die 201 is 60-180 ℃, the coating temperature of the front coating device is 10-150 ℃, and the coating temperature of the rear coating device is 60-180 ℃. The front coating die 101 and the back coating die 201 also satisfy the following environmental conditions when coating, respectively: the environment temperature is 15-30 ℃, the environment humidity is 0-50% RH, and the device is in the common atmospheric environment or the environment of inert protective atmosphere.
Specifically, the front die head lifting table 102 and the rear die head lifting table 202 are respectively provided with a film forming device (not shown in the figure) for performing a film forming process on the wet film just coated on the surface of the substrate 108 within 0 to 60 seconds after the coating of the corresponding front coating die head 101 and rear coating die head 201 is finished. The film forming device comprises a heater, a blower or a suction fan, or a heater and a vacuum pump.
Specifically, the film formation process includes a heat treatment or a drying process. The heat treatment is to place the substrate 108 at the low vacuum pressure 10 after each coating is finished-5-105Pa and air temperature of 25-150 ℃, and placing for 10-600s for annealing treatment. The drying treatment is to rapidly dry the wet film on the surface of the substrate after each coating by air convection caused by blowing or air draft, wherein the air speed of the air flow caused by the blowing or air draft is 0.5-10m/s, and the temperature of the flowing air is 25-150 ℃.
Specifically, in S3 and S5, the post-processing procedures performed by the front post-processing device 105 and the rear post-processing device 205 include: the coated substrate 108 is placed in vacuum and driedAir, nitrogen, H2The environmental pressure is 10 under the action of at least one gas of O (water), DMF (N, N-dimethylformamide), DMSO (dimethyl sulfoxide), GBL (gamma-butyrolactone) and NMP (N-methylpyrrolidone)-5-106Pa, the ambient temperature is 100-150 ℃, and the standing time is 5-120min, so that the wet film is dried.
The invention also discloses a perovskite solar cell, which comprises a perovskite thin film layer, wherein the perovskite thin film layer is prepared by adopting the coating equipment of the precursor solution containing the surfactant, or the use method of the coating equipment of the precursor solution containing the surfactant, or the preparation method of the perovskite solar cell.
The technical solution of the present invention will be further described with reference to specific embodiments.
Example one
The perovskite thin film layer is prepared by adopting the prior two-step method technology. Firstly, a substrate prepared with a PTAA electron/hole transport layer is coated with 1mol/L PbI by a slit coating mode2The method comprises the following steps of (1) carrying out post-treatment on a coated substrate to obtain a divalent precursor solution containing the perovskite, wherein a divalent precursor solvent in the divalent precursor solution of the perovskite is DMF and DMSO, and the volume ratio of the DMF to the DMSO is 9:12A thin film layer.
Wherein, PbI2Slit coating conditions of the divalent precursor solution: the amount of the coating solution was 1ul/cm at a temperature of 25 ℃ and a humidity of 30% RH2The slit width was 100um, and the coating speed was 5 cm/s. Drying conditions after coating: drying with hot air blowing, wherein the wind speed near the substrate surface is 2m/s, the temperature near the substrate surface is 60 deg.C, and the coating contains PbI2The substrate of the thin film layer was annealed at 100 ℃ for 2 min.
Continuing to contain PbI2Slot-type coating of 65mg/mL MAI solution is carried out on the substrate surface of the thin film layer, post-treatment heating is carried out on the coated substrate, and the perovskite thin film layer is prepared on the substrate surface.
Wherein, the MAI monovalent precursor solutionSlit coating conditions: the amount of the coating solution was 2.5ul/cm at a temperature of 25 ℃ and a humidity of 30% RH2The slit width was 100um, and the coating speed was 5 cm/s. Drying conditions after coating: and (3) drying by hot air blowing, wherein the air speed of the accessory of the substrate surface is 2m/s, the temperature near the substrate surface is 60 ℃, and annealing the substrate containing the perovskite thin film layer at 100 ℃ for 60min after coating.
As shown in FIG. 4, many white pores are formed in the perovskite thin film layer due to the PbI coating2PbI which is hydrophilic in solution2The solution is difficult to infiltrate the surface of the lipophilic PTAA electron/hole transport layer, PbI2The cohesion of the solution is greater than the adhesion to the surface of the portion in contact with the PTAA electron/hole transport layer, resulting in PbI2The solution has a tendency to "shrink" and create many holes.
Example two
By adopting a two-step process, adding a surfactant into the divalent precursor solution for coating the perovskite, and coating the monovalent precursor solution after coating to obtain the perovskite thin film layer coated cross-sectional schematic diagram shown in fig. 5.
The conductive layer 11 and the electron/hole transport layer 12-2 are sequentially formed on the substrate, and the perovskite thin film layer 16 formed on the electron/hole transport layer 12-2 is coated with a divalent precursor solution of a perovskite containing a surfactant on the electron/hole transport layer 12-2, and the surface active agent 17 is provided on the lower surface of the perovskite thin film layer 16. In the figure, the small dots of the surfactant 17 are hydrophilic groups and the curve is lipophilic groups. The hydrophilic groups are distributed on the side near the perovskite thin film layer 16, while the lipophilic groups are distributed on the lipophilic electron/hole transport layer 12-2 and the air side of the perovskite thin film layer 16. The addition of the surfactant 17 effectively improves the wettability of the perovskite thin film layer 16 on the oleophilic electron/hole transport layer 12-2, improves the flatness of the surface of the perovskite solution in contact with air, and improves the coverage rate of the perovskite thin film on the electron/hole transport layer 12-2 and the uniformity of the film thickness of the thin film.
The first embodiment of the perovskite thin film layer is prepared by using the coating device of the precursor solution containing the surfactant, and comprises the following steps:
first, a divalent precursor mixed solution of a surfactant-containing perovskite is prepared. At 1mol/L PbI2Adding a Didodecyl Dimethyl Ammonium Bromide (DDAB) surfactant with the mass ratio of 1 per mill into a divalent precursor solution of the perovskite, and mixing and stirring at the temperature of 60 ℃ to obtain a divalent precursor mixed solution containing the surfactant. Wherein the divalent precursor solvent in the divalent precursor solution of the perovskite is DMF and DMSO, and the volume ratio of the DMF to the DMSO is 9: 1.
Secondly, coating the prepared divalent precursor mixed solution of the perovskite on the substrate with the prepared PTAA electron/hole transport layer by adopting a slit coating mode, and then carrying out post-treatment on the coated substrate to obtain the substrate containing PbI2A thin film layer.
Continuing to contain PbI2Slot-type coating of 65mg/mL MAI solution is carried out on the substrate surface of the thin film layer, post-treatment heating is carried out on the coated substrate, and the perovskite thin film layer is prepared on the substrate surface.
Wherein, PbI2And the slit coating conditions and post-treatment conditions of the MAI solution were the same as in example one.
Referring to fig. 6, it is clearly seen that, compared to the first embodiment, in addition to the existence of a small amount of shrinkage cavities, the coverage rate of the perovskite thin film layer of the present embodiment on the substrate of the oleophilic PTAA electron/hole transport layer is greatly improved, and the outer surface thereof is smoother and smoother.
The divalent precursor mixed solution is obtained by adding the surfactant into the divalent precursor solution of the perovskite, and in the slit type coating process by utilizing the coating equipment, the surfactant plays a role in leveling the divalent precursor solution of the perovskite, so that the defects of uneven film thickness and holes of the formed perovskite thin film are reduced, and the efficiency of the prepared perovskite solar cell is improved. Compared with the prior art, the invention also relates to the function of the surfactant in emulsifying, solubilizing and suspending in the perovskite solution.
EXAMPLE III
The second embodiment of the perovskite thin film layer is prepared by using the coating device of the precursor solution containing the surfactant, which comprises the following steps:
first, a divalent precursor mixed solution of a surfactant-containing perovskite is prepared. At 1mol/L PbI2Adding a Didodecyl Dimethyl Ammonium Bromide (DDAB) surfactant with the mass ratio of 1 per mill into a divalent precursor solution of the perovskite, and mixing and stirring at the temperature of 60 ℃ to obtain a divalent precursor mixed solution containing the surfactant. Wherein the divalent precursor solvent in the divalent precursor solution of the perovskite is DMF and DMSO, and the volume ratio of the DMF to the DMSO is 9: 1.
Secondly, coating the prepared divalent precursor mixed solution of the perovskite on the substrate with the tungsten oxide electron/hole transport layer by adopting a slit coating mode, and then carrying out post-treatment on the coated substrate to obtain the substrate containing PbI2A thin film layer.
Continuing to contain PbI2Slot-type coating of 65mg/mL MAI solution is carried out on the substrate surface of the thin film layer, post-treatment heating is carried out on the coated substrate, and the perovskite thin film layer is prepared on the substrate surface.
Wherein, PbI2And the slit coating conditions and post-treatment conditions of the MAI solution were the same as in example one.
As shown in fig. 7, it can be clearly seen from the figure that, compared with the second embodiment, the coverage rate of the perovskite thin film layer of the present embodiment on the substrate of the hydrophilic tungsten oxide electron/hole transport layer is greatly improved, the outer surface thereof is smoother and smoother, and the defects such as shrinkage cavities and pinholes are avoided.
Example four
A third embodiment of the perovskite thin film layer production using the coating apparatus of a precursor solution containing a surfactant of the present invention comprises the steps of:
the perovskite thin film layer is prepared by adopting the prior two-step method technology. Firstly, coating 1mol/L PbI on a substrate prepared with a tungsten oxide electron/hole transport layer by adopting a slit coating mode2The divalent precursor solution of the perovskite, wherein the divalent precursor solvent in the divalent precursor solution of the perovskite is DMF and DMSODMF and DMSO in a volume ratio of 9:1, and post-treating the coated substrate to obtain a composition containing PbI2A thin film layer.
Continuing to contain PbI2Slot-type coating of 65mg/mL MAI solution is carried out on the substrate surface of the thin film layer, post-treatment heating is carried out on the coated substrate, and the perovskite thin film layer is prepared on the substrate surface.
Wherein, PbI2And the slit coating conditions and post-treatment conditions of the MAI solution were the same as in example one.
Referring to fig. 8, it can be clearly seen that, compared with the third embodiment, the surface of the perovskite thin film layer of the present embodiment is distributed with dense pinholes. This defect is mainly caused by the solvent evaporating too fast. This is not the case in example three due to the addition of SDBS surfactant.
Fig. 9 is a graph showing the efficiency of the perovskite thin film layer of the first to fourth examples after being completely fabricated into a perovskite solar cell in the same manner. The perovskite solar cell structure made is: ITO/hole transport layer/perovskite layer/C60The effective cell area of the test is 1cm2. The test results show that the cell efficiencies of the first to fourth examples are respectively as follows: 9.4%, 15.9%, 15.0% and 14.3%.
As can be seen from fig. 9, the coverage of the perovskite layer on the electron/hole transport layer substrate is low due to the large number of shrinkage cavities in the perovskite thin film in example one, resulting in poor short circuit current density JSC and fill factor FF of the cell. The existence of the holes may also cause the leakage of electricity of the battery, resulting in poor open-circuit voltage VOC.
Compared with the first embodiment, after 1% of SDBS surfactant is added in the second embodiment, the coverage rate of the perovskite thin film on the substrate of the electron/hole transport layer is obviously greatly improved, so that the battery efficiency is greatly improved.
The VOC, JSC and FF of example three were slightly higher than those of example four, and the differences were not as significant as those of example one and example two. The reason for this is that the wettability of the hydrophilic perovskite precursor solution for the hydrophilic tungsten oxide electron/hole transport layer is significantly better than for the lipophilic PTAA electron/hole transport layer. On the premise of not adding a surfactant, the perovskite precursor solution has better coverage rate on the hydrophilic tungsten oxide electron/hole transport layer. However, in example four, since the surfactant was not contained, the solvent rapidly volatilized in a short time during the coating process to cause a large number of pinholes. The presence of these pinholes results in the efficiency of the resulting perovskite solar cell being slightly inferior to that of example three.
It can be seen that due to PbI in example one2The thin film has a large number of shrinkage holes, the coverage rate on the transmission layer substrate is low, and the battery efficiency is low due to the area loss of a light absorption layer and the local electric leakage condition in the perovskite solar battery after the perovskite solar battery is prepared by reaction. Compared with the first embodiment, the second embodiment adds 1 per mill of SDBS surfactant and PbI2The coverage rate of the film on the substrate of the transmission layer is obviously greatly improved, the surface of the film is smooth and flat, and the defects of shrinkage holes, pinholes and the like are basically avoided.
Hydrophilic PbI2The wettability of the solution on the hydrophilic tungsten oxide transmission layer is obviously better than that on the lipophilic transmission layer, and PbI is added under the condition of not adding a surfactant2The solution is coated on a hydrophilic substrate with a much better coverage than on an oleophilic substrate. However, in the fourth example, since the solution does not contain a surfactant, the solvent is rapidly volatilized in a short time during the coating process, and a large number of pinholes are caused. The presence of these pinholes results in a perovskite solar cell with significantly poorer efficiency than the three PbI example2The efficiency of the thin film prepared into the perovskite solar cell.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (19)
1. A coating device of a precursor solution containing a surfactant is characterized by comprising a coating platform, a coating device, a post-treatment device and a conveying device, wherein the coating device comprises a front coating device and a rear coating device, the post-treatment device comprises a front post-treatment device and a rear post-treatment device, the front coating device, the front post-treatment device, the rear coating device and the rear post-treatment device are respectively arranged above the coating platform in sequence, the front coating device comprises a front coating die head, a front die head lifting platform, a front injection pump and a front raw material bottle, the rear coating device comprises a rear coating die head, a rear die head lifting platform, a rear injection pump and a rear raw material bottle, the front coating die head and the rear coating die head are respectively arranged on the front die head lifting platform and the rear die head lifting platform corresponding to the front coating die head and the rear coating die head lifting platform and are both positioned above the coating platform, the front coating die head is communicated with a front injection pump through a front conduit, the front injection pump is communicated with a front raw material bottle through a front pipeline, the rear coating die head is communicated with a rear injection pump through a rear conduit, the rear injection pump is communicated with a rear raw material bottle through a rear pipeline, a divalent precursor mixed solution of perovskite containing a surfactant is contained in the front raw material bottle, and a monovalent precursor solution of perovskite is contained in the rear raw material bottle; the front die head lifting platform and the rear die head lifting platform are driven by the conveying device to move relative to the coating platform, and a substrate to be coated placed on the coating platform is coated by the front coating die head, conveyed to the front post-treatment device by the conveying device for post-treatment, then conveyed to the rear coating die head for coating, and conveyed to the rear post-treatment device for post-treatment.
2. The apparatus of claim 1, wherein the conveyor moves the coating platform, the front and rear die lifters remain stationary, and relative movement occurs between the front and rear die lifters and the coating platform.
3. The apparatus of claim 1, wherein the conveyor moves the front and back die lifts simultaneously, the coating platform remains stationary, and relative movement occurs between the front and back die lifts and the coating platform.
4. The apparatus for coating a surfactant-containing precursor solution according to claim 1, wherein a film-forming device for forming a film on the surface of the substrate in a period of 0 to 60 seconds after the coating of the front coating die and the rear coating die corresponding thereto is completed is further provided on each of the front die lifter and the rear die lifter, and the film-forming device includes a heater and a blower or a suction fan, or a heater and a vacuum pump.
5. The apparatus for coating a precursor solution containing a surfactant according to claim 1, wherein the front and rear post-treatment devices respectively comprise a heater, a vacuum pump, and a closed chamber for facilitating opening and closing.
6. The apparatus for coating a surfactant-containing precursor solution according to claim 1, wherein the surfactant-containing perovskite divalent precursor mixed solution is a mixed solution obtained by mixing a divalent precursor solution containing a divalent metal halide BX with 0.05 to 5% by mass of a surfactant and stirring at a temperature of 10 to 100 ℃2And a divalent precursor solvent, wherein the monovalent precursor solution of the perovskite is a solution obtained by mixing monovalent cation halide AX and the monovalent precursor solvent and stirring at the temperature of 10-100 ℃, and A is MA+、FA+、Cs+B is Pb2+、Sn2+、Ze2+At least one of (1), X is Cl-、Br-、I-At least one of; the concentration of the divalent precursor solution is 0.5-1.5mol/L, and the concentration of the monovalent precursor solutionThe divalent precursor solvent is at least one of N, N-dimethylformamide, dimethyl sulfoxide, N-methylpyrrolidone and gamma-butyrolactone, the monovalent precursor solvent is at least one of isopropanol, ethanol, gamma-butyrolactone and propylene glycol methyl ether acetate, the surfactant is polyethylene glycol monooleate, dicocodimethylammonium chloride, dimethyldihydrogenated tallow ammonium methosulfate, ditallow quaternary ammonium salt, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monooleate, cetyl dimethylbenzyl ammonium chloride, cetyl pyridinium bromide, cetyl pyridinium chloride, cetyl trimethyl ammonium bromide, cetyl trimethyl ammonium chloride, polyglyceryl fatty acid ester, polyglycerol polyricinoleate, trimethyl soybean oil ammonium chloride, dialkyl dimethyl ammonium chloride, dimethyl dihydrogenated tallow ammonium chloride, dimethyl dicococoal ammonium chloride, trimethyl tallow ammonium chloride, N-tallow pentamethyl propane diammonium chloride, L- α -phosphatidyl choline, lauryl sodium lauryl sulfate, didodecyl vinyl ether dimethyl ammonium bromide, polyoxyethylene ether, polyoxyethylene lauryl ether, polyoxyethylene lauryl ether fatty acid, polyoxyethylene lauryl ether fatty acid polyoxyethylene lauryl ether, polyoxyethylene lauryl ether fatty acid polyoxyethylene lauryl ether, polyoxyethylene lauryl ether fatty acidAmmonium, dicocoyldimethylammonium chloride, polyethylene glycol sorbitol laurate, polyoxyethylene sorbitol oleate, polyoxyethylene sorbitol tetraester, polyoxyethylene castor oil, polyoxyethylene allyl glycol monostearate, polyoxyethylene sorbitol ester, polyoxyethylene sorbitol tetraoleate, polyoxyethylene sorbitol hexaoleate, polyoxyethylene stearate, alkylphenol polyoxyethylene, fatty alcohol polyoxyethylene ether, polyoxyethylene fatty amine, coconut oil ethylene oxide adduct, polyoxyethylene castor oil, alkylphenol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, alkylaryl polyoxyethylene ether, alkyl polyoxyethylene ether, alkylphenol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, stearyl alcohol polyoxyethylene ether, fatty acid polyoxyethylene ester, polyoxyethylene fatty amine, 2-bromo-2-nitropropane-1, 3-diol, alkyl dimethyl benzyl ammonium chloride, N-tetradecyl dimethyl benzyl ammonium chloride, N-alkyl dimethyl-1-naphthylmethyl ammonium chloride, coconut fatty acid diethanolamide, sodium alkylaryl sulfonate, linear alkyl benzene sulfonate, propylene glycol mono fatty acid ester, carboxyl polymethylene compound, linear alcohol polyoxyethylene ether, lauryl alcohol polyoxyethylene ether sulfate ammonium salt, lauryl alcohol polyoxyethylene ether sulfate sodium salt, nonylphenol polyoxyethylene ether, lauryl alcohol polyoxyethylene ether, N-dimethyl hydroxyethyl octadecyl amido nitrate quaternary ammonium salt, N-dimethyl hydroxyethyl octadecyl amido phosphate quaternary ammonium salt, polyether, glucosyl aminopropyl dimethyl-2-hydroxyethyl ammonium chloride, N-alkyl dimethyl benzyl ammonium chloride, N-tetradecyl dimethyl benzyl ammonium chloride, N-alkyl dimethyl-1-naphthylmethyl ammonium chloride, coconut fatty acid diethanolamide, alkylaryl sulfonate, linear alkyl benzene sulfonate, cetyl trimethyl ammonium bromide, cetyl dimethyl benzyl ammonium chloride, alkyl trimethyl ammonium bromide, fatty alcohol polyoxyethylene ether, propylene glycol and fatty acid, polyethylene glycol stearate, polyoxyethylene castor oil, nonylphenol polyoxyethylene ether, polyoxyethylene stearate, nonylphenol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, sodium alkylnaphthalene sulfonate, potassium alkylnaphthalene sulfonate, calcium alkylaryl sulfonate monocalcium salt, tridecylmethoxysilicate, nonylphenol polyoxyethylene ether, C10-13 fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, sodium alkylbenzenesulfonate, polyoxyethylene alkylamine, coconut fatty acid polyoxyethyleneEsters, propylene glycol polyoxypropylene polyoxyethylene ether, alkylphenol-formaldehyde resin polyether, sucrose fatty acid esters, nonylphenol polyoxyethylene ether, sodium dodecyldiphenyloxide disulfonate, sodium N-decylphenyl diphenyloxide disulfonate, disodium 4-dodecyl-2, 3-oxo-diphenylsulfonate, propylene oxide ethylene oxide block copolymer, sodium alkylbenzenesulfonate, cocoyl-1, 3-propylenediamine diacetate, N-tallow-1, 3-propylenediamine diacetate, N-cocoyl-1, 3-propylenediamine, N-tallow-1, 3-propylenediamine, lauryl sulfate diethanolamine, alkyl polyglycol ether, fatty acid alkylamide sulfosuccinic acid monoester sodium, fatty alcohol polyoxyethylene ether sulfosuccinic acid monoester sodium, polyoxyethylene fatty acid alkanolamide sulfosuccinic acid monoester sodium, fatty alcohol phosphate, alkyl polyoxyethylene ether phosphate sodium salt, alkylaryl polyoxyethylene ether, alkyl phosphate sodium salt, sulfosuccinic acid disodium salt, sulfosuccinic acid dialkyl alcohol amide, alkylaryl sulfonate, alkyl dimethyl betaine, alkyl ethylene oxide, oleic acid polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene ether polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether polyoxyethylene ether, polyoxyethylene ether polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether polyoxyethylene ether polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether, polyoxyethylene ether polyoxyethylene ether, polyoxyethylene ether polyoxyethylene ether, polyoxyethylene etherFatty amine, alkyl dimethyl ammonium chloride, alkyl polyoxyethylene ether sulfate sodium salt, propylene glycol polyoxyethylene polyoxypropylene ether, imidazolidinyl urea, polyoxyethylene methyl glucoside sesquistearate, fatty alcohol phosphate, mixed organic phosphate, α -olefin sodium sulfonate, sodium secondary alkanesulfonate, fatty alcohol polyoxyethylene ether, polyoxyethylene diisobutylphenoxyethyl dimethyl benzyl ammonium chloride, linear fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, octylphenol polyoxyethylene ether, nonylphenol polyoxyethylene ether, dinonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether, sodium oleyl oxyethyl sulfonate, sodium N-palmitoyl-N-cyclohexyl taurate, sodium N-methyl-N-oleoyl sulfonate, fatty alcohol polyoxyethylene ether, 3-trifluoromethyl-4, 4' -dichloro-N, N-diphenylurea, polypropylene glycol, polyethylene glycol, N-alkyltrimethylammonium chloride, polyethylene glycol fatty acid ester, organic silicone, polyoxyethylene fatty amine, fatty acid polyglycol ester, alkylphenol polyglycol ether, cocoyl alkyl betaine, coconut acyl hydrolyzed animal protein potassium salt, propylene glycol fatty acid ester, castor oil, polyoxyethylene ether, polyoxyethylene alkyl polyoxyethylene ether sulfate, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene lauryl ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene lauryl ether polyoxyethylene ether, polyoxyethylene alkyl polyoxyethylene ether polyoxyethylene alkyl ether, polyoxyethylene lauryl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene lauryl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene ether polyoxyethylene alkyl ether, polyoxyethylene alkyl polyoxyethylene ether, polyoxyethylene alkyl ether, polyoxyethylene alkylPolyoxyethylene ether sulfate sodium salt, propylene oxide ethylene oxide block copolymer, cetyl polyoxyethylene ether, lauryl polyoxyethylene ether, oleyl polyoxyethylene ether, fatty alcohol polyoxyethylene ether diphosphate, nonylphenol polyoxyethylene ether, octylphenol polyoxyethylene ether, sucrose monolaurate, sucrose monooleate, sucrose monopalmitate, sucrose distearate, sucrose mono-distearate, polyethylene glycol distearate, nonylphenol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, oleyl alcohol/cetyl polyoxyethylene ether, nonylphenol polyoxyethylene ether, oleyl alcohol polyoxyethylene ether, eicosanoic acid polyoxyethylene ester, 4-tert-butyl-4' -methoxydibenzoylmethane, 2-ethylhexyl p-methoxylaurate, methyl ethyl acrylate, methyl methacrylate, ethyl methacrylate, methyl methacrylate, ethyl, Fatty alcohol polyoxyethylene ether, alkyl methyl polyoxyethylene ether quaternary ammonium salt, dimethyl polysiloxane polyether, nipagin methyl ester, nipagin propyl ester, potassium alkyl phosphate of ethyl monophenyl ether, potassium alkyl phosphate, propylene glycol polyoxyethylene polyoxypropylene ether, propylene glycol polyoxypropylene polyoxyethylene ether, ethylenediamine polyoxypropylene polyoxyethylene ether, a compound of stearyl alcohol polyoxyethylene ether and stearyl alcohol, glycerol polyoxypropylene polyoxyethylene ether, quaternary amino ether of ethoxylated cellulose, polyoxyethylene sorbitan fatty acid ester, polyoxyethylene ester of C16-20 fatty acid, fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, ethylenediamine polyoxyethylene polyoxypropylene ether, petroleum sulfonate, quaternized imidazoline, sodium stearyl lactate, nonylphenol polyoxyethylene ether, lauryl alcohol polyoxyethylene ether sulfate sodium salt, sodium lauryl alcohol polyoxyethylene ether sulfate, sodium stearyl alcohol polyoxyethylene ether, polyoxyethylene lauryl ether sulfate, polyoxyethylene lauryl ether, sodium lauryl ether, polyoxyethylene lauryl ether, sodium stearyl alcohol, polyoxyethylene lauryl ether, lanosterol derivatives, sodium dodecyl benzene sulfonate, dimer acid diisopropyl ester, alkyl amine oxide, alkyl diethanolamide, polyoxyethylene nonionic surfactant, propylene glycol propylene oxide ethylene oxide block copolymer, alkyl phenolic resin polyether, dimethyl siloxane, nonylphenol polyoxyethylene ether, octylphenol polyoxyethylene ether, cetyl polyoxyethylene ether, triethanolamine lauryl stearate, sodium lauryl polyoxyethylene ether sulfate, polyoxyethylene synthetic fatty acid monoethanolamide, primary alcohol polyoxyethylene ether, alkyl polyoxyethylene ether, fatty alcohol polyethylene glycolAn alkenyl ether mixture, a quaternary ammonium salt, dimethyl distearyl amine chloride, a polyoxyethylene fatty amide, polyoxyethylene stearate, neutral lecithin, sorbitan monolaurate, sorbitan monostearate, sorbitan tristearate, sorbitan monooleate, sorbitan trioleate, coconut acid diethanolamide, lauric acid diethanolamide, imidazole strange derivative, fatty acid polyoxyethylene ether, nonylphenol polyoxyethylene ether, sodium dodecyl benzene sulfonate, alkylbenzene sulfonate, secondary alkyl sodium sulfate, nonylphenol polyoxyethylene ether, ethylenediamine polyoxypropylene polyoxyethylene ether, tridecanol polyoxyethylene ether sulfate sodium salt, lauryl alcohol diethanolamide, alkylphenol polyoxyethylene ether, fatty alcohol polyoxypropylene polyoxyethylene ether and fatty alcohol polyoxypropylene polyoxyethylene ether succinate.
7. Use of a device for coating a precursor solution containing surfactants according to any of claims 1 to 6, characterized in that it comprises the following steps:
firstly, injecting a prepared divalent precursor mixed solution and a monovalent precursor solution into a front raw material bottle and a rear raw material bottle respectively;
secondly, placing the substrate to be coated on a coating platform, starting a front injection pump of a front coating device, starting a conveying device, conveying a divalent precursor mixed solution to a front coating die head through a front conduit, and performing relative movement between a front die head lifting platform and the coating platform under the driving of the conveying device, wherein the front coating die head performs first coating on the surface of the substrate;
thirdly, starting the front post-treatment device, and conveying the substrate coated with the wet film of the divalent precursor mixed solution to the front post-treatment device by the conveying device for post-treatment so as to prepare a semi-dry film containing the divalent precursor mixed solution on the surface of the substrate;
fourthly, a rear injection pump of the rear coating device is started, the monovalent precursor solution is conveyed to a rear coating die head through a rear conduit, the conveying device is started to convey the substrate coated with the divalent precursor mixed solution to the rear coating die head, meanwhile, the rear die head lifting platform and the coating platform move relatively under the driving of the conveying device, and the rear coating die head coats the surface of the substrate for the second time;
and fifthly, starting the rear post-treatment device, conveying the substrate coated with the monovalent precursor solution wet film to the rear post-treatment device by the conveying device for post-treatment, and preparing the perovskite thin film layer on the surface of the substrate.
8. The method of using a coating apparatus of a surfactant-containing precursor solution according to claim 7, wherein in the first step, the divalent precursor mixed solution of the surfactant-containing perovskite is a mixed solution obtained by mixing a divalent precursor solution including a divalent metal halide BX with a surfactant in an amount of 0.05 to 5% by mass and stirring at a temperature of 10 to 100 ℃2And a divalent precursor solvent, wherein the monovalent precursor solution of the perovskite is a solution obtained by mixing monovalent cation halide AX and the monovalent precursor solvent and stirring at the temperature of 10-100 ℃, and A is MA+、FA+、Cs+B is Pb2+、Sn2+、Ze2+At least one of (1), X is Cl-、Br-、I-At least one of; the concentration of the divalent precursor solution is 0.5-1.5mol/L, and the concentration of the monovalent precursor solution is 30-100 mg/ml; the divalent precursor solvent is at least one of N, N-dimethylformamide, dimethyl sulfoxide, N-methylpyrrolidone and gamma-butyrolactone, the monovalent precursor solvent is at least one of isopropanol, ethanol, gamma-butyrolactone and propylene glycol monomethyl ether acetate, and the surfactant is a nonionic surfactant, a cationic surfactant, an anionic surfactant and an amphoteric surfactant.
9. Use of a device for coating a precursor solution containing a surfactant according to claim 7, characterized in that in the second step andin the fourth step, the working setting parameter conditions of the front coating die head and the rear coating die head are respectively as follows: the width of the slit is 20-300um, and the amount of coating liquid is 0.2-2ul/cm2The coating speed is 0.5-50cm/s, the liquid outlet temperature of the front coating die head is 15-150 ℃, the liquid outlet temperature of the rear coating die head is 60-180 ℃, the coating temperature of the front coating device is 10-150 ℃, and the coating temperature of the rear coating device is 60-180 ℃; the front coating die head and the rear coating die head respectively meet the following environmental conditions when coating: the environment temperature is 15-30 ℃, the environment humidity is 0-50% RH, and the device is in the common atmospheric environment or the environment of inert protective atmosphere.
10. The method of using a coating apparatus for a surfactant-containing precursor solution according to claim 7, wherein a film-forming device for forming a film on a wet film just coated on the surface of a substrate within a period of 0 to 60 seconds after the coating of the corresponding front coating die and rear coating die is completed is further provided on each of the front die lift and rear die lift, and the film-forming device includes a heater and a blower or an exhaust fan, or a heater and a vacuum pump.
11. The method of using a coating apparatus of a surfactant-containing precursor solution according to claim 10, wherein the film forming process includes a heat treatment or a drying process, and the heat treatment is performed by placing the substrate after each coating at a low vacuum pressure of 10 degrees f-5-105Pa, air temperature 25-150 deg.C, placing for 10-600s for annealing treatment; the drying treatment is to rapidly dry the wet film on the surface of the substrate after each coating by air convection caused by blowing or air draft, wherein the air speed of the air flow caused by the blowing or air draft is 0.5-10m/s, and the temperature of the flowing air is 25-150 ℃.
12. Use of a device for coating a precursor solution containing surfactants according to claim 7, characterized in that in the third and fifth step, the front-end post-treatmentThe post-processing process performed by the device and the rear post-processing device includes: placing the coated substrate in an environment with the action of at least one gas of vacuum, dry air, nitrogen, water, N-dimethylformamide, dimethyl sulfoxide, gamma-butyrolactone and N-methylpyrrolidone, wherein the environmental pressure is 10-5-106Pa, the ambient temperature is 100-150 ℃, and the standing time is 5-120min, so that the wet film is dried.
13. A method for manufacturing a perovskite solar cell, characterized in that a coating apparatus of the surfactant-containing precursor solution as defined in any one of claims 1 to 6 is used in the process of manufacturing the perovskite solar cell, comprising the steps of:
s1, respectively injecting the prepared divalent precursor mixed solution and monovalent precursor solution into the front raw material bottle and the rear raw material bottle;
s2, placing the substrate with the conductive layer and the electron/hole transport layer prepared on the surface on a coating platform, starting a front injection pump of a front coating device, starting a conveying device, conveying a divalent precursor mixed solution to a front coating die head through a front conduit, and carrying out relative movement between a front die head lifting platform and the coating platform under the driving of the conveying device, wherein the front coating die head is used for carrying out first coating on the surface of the substrate;
s3, starting the front post-treatment device, and conveying the substrate coated with the wet film of the divalent precursor mixed solution to the front post-treatment device by the conveying device for post-treatment, so as to prepare a semi-dry film containing the divalent precursor mixed solution on the surface of the substrate;
s4, then, starting a rear injection pump of a rear coating device, conveying the monovalent precursor solution to a rear coating die head through a rear conduit, starting a conveying device to convey the substrate coated with the divalent precursor mixed solution to the rear coating die head, and simultaneously, under the driving of the conveying device, generating relative movement between a rear die head lifting platform and a coating platform, and performing secondary coating on the surface of the substrate by the rear coating die head;
s5, starting the post-treatment device, conveying the substrate coated with the monovalent precursor solution wet film to the post-treatment device by the conveying device for post-treatment, and preparing a perovskite thin film layer on the surface of the electron/hole transport layer of the substrate;
s6, continuously preparing a hole/electron transport layer and a back electrode layer on the surface of the perovskite thin film layer of the substrate until the perovskite solar cell is prepared.
14. The method for producing a perovskite solar cell as claimed in claim 13, wherein the divalent precursor mixed solution of the surfactant-containing perovskite is a mixed solution obtained by mixing a divalent precursor solution including a divalent metal halide BX with 0.05 to 5% by mass of a surfactant and stirring at a temperature of 10 to 100 ℃ in S12And a divalent precursor solvent, wherein the monovalent precursor solution of the perovskite is a solution obtained by mixing monovalent cation halide AX and the monovalent precursor solvent and stirring at the temperature of 10-100 ℃, and A is MA+、FA+、Cs+B is Pb2+、Sn2+、Ze2+At least one of (1), X is Cl-、Br-、I-At least one of; the concentration of the divalent precursor solution is 0.5-1.5mol/L, and the concentration of the monovalent precursor solution is 30-100 mg/ml; the divalent precursor solvent is at least one of N, N-dimethylformamide, dimethyl sulfoxide, N-methylpyrrolidone and gamma-butyrolactone, the monovalent precursor solvent is at least one of isopropanol, ethanol, gamma-butyrolactone and propylene glycol monomethyl ether acetate, and the surfactant is a nonionic surfactant, a cationic surfactant, an anionic surfactant and an amphoteric surfactant.
15. The method of manufacturing a perovskite solar cell as claimed in claim 13, wherein in S2 and S4, the operating setting parameters of the front coating die and the rear coating die are respectively: the width of the slit is 20-300um, and the amount of coating liquid is 0.2-2ul/cm2The coating speed was 0.5-50cm/s, the liquid outlet temperature of the front coating die head is 15-150 ℃, the liquid outlet temperature of the rear coating die head is 60-180 ℃, the coating temperature of the front coating device is 10-150 ℃, and the coating temperature of the rear coating device is 60-180 ℃; the front coating die head and the rear coating die head respectively meet the following environmental conditions when coating: the environment temperature is 15-30 ℃, the environment humidity is 0-50% RH, and the device is in the common atmospheric environment or the environment of inert protective atmosphere.
16. The method for producing a perovskite solar cell as claimed in claim 13, wherein a film forming device for performing a film forming process on the wet film just coated on the surface of the substrate within a time of 0 to 60s after the coating of the front coating die and the rear coating die corresponding thereto is completed is further provided on each of the front die lifter and the rear die lifter, and the film forming device includes a heater and a blower or a suction fan, or a heater and a vacuum pump.
17. The method of manufacturing the perovskite solar cell as claimed in claim 16, wherein the film forming process comprises a heat treatment or a drying process, wherein the heat treatment is performed by placing the substrate after each coating is finished under a low vacuum pressure of 10 degrees f-5-105Pa, air temperature 25-150 deg.C, placing for 10-600s for annealing treatment; the drying treatment is to rapidly dry the wet film on the surface of the substrate after each coating by air convection caused by blowing or air draft, wherein the air speed of the air flow caused by the blowing or air draft is 0.5-10m/s, and the temperature of the flowing air is 25-150 ℃.
18. The method of manufacturing a perovskite solar cell as claimed in claim 13, wherein the post-treatment process performed by the front and rear post-treatment devices in S3 and S5 comprises: placing the coated substrate in an environment with the action of at least one gas of vacuum, dry air, nitrogen, water, N-dimethylformamide, dimethyl sulfoxide, gamma-butyrolactone and N-methylpyrrolidone, wherein the environmental pressure is 10-5-106Pa, the ambient temperature is 100-150 ℃, and the standing time is 5-120min, so that the wet film is dried.
19. A perovskite solar cell comprising a perovskite thin film layer, characterized in that the perovskite thin film layer is produced using the coating apparatus of the surfactant-containing precursor solution as defined in any one of claims 1 to 6, or using the method of using the coating apparatus of the surfactant-containing precursor solution as defined in any one of claims 7 to 12, or using the method of producing a perovskite solar cell as defined in any one of claims 13 to 18.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111710784A (en) * | 2020-06-18 | 2020-09-25 | 浙江浙能技术研究院有限公司 | Perovskite suspension state precursor liquid and film forming method |
CN112993167A (en) * | 2021-02-07 | 2021-06-18 | 重庆大学 | Application of organic ammonium salt modified metal oxide nanoparticles in positive perovskite solar cell and preparation method of device |
Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0530751A1 (en) * | 1991-09-02 | 1993-03-10 | Fuji Photo Film Co., Ltd. | Coating method and apparatus |
CN1220673A (en) * | 1996-05-31 | 1999-06-23 | 美国3M公司 | Durable, low surface energy compounds and articles, apparatuses, and methods for using the same |
JP2000107668A (en) * | 1998-10-05 | 2000-04-18 | Konica Corp | Coater and coating method |
JP2004167365A (en) * | 2002-11-19 | 2004-06-17 | Seiko Epson Corp | Liquid feed device, liquid discharge device, liquid drop delivery device, electro-optical device, method for manufacturing electro-optical device and electronic unit |
US20120251726A1 (en) * | 2011-03-30 | 2012-10-04 | Kuniyasu Satoshi | Method of manufacturing film with coating |
WO2013105534A1 (en) * | 2012-01-11 | 2013-07-18 | コニカミノルタ株式会社 | Thin film-forming method and thin film-forming device |
CN103611653A (en) * | 2013-12-13 | 2014-03-05 | 厦门惟华光能有限公司 | Coating machine for experiments of organic solar batteries |
US20140154485A1 (en) * | 2011-07-29 | 2014-06-05 | 3M Innovative Properties Company | Multilayer film having at least one thin layer and continuous process for forming such a film |
WO2015016201A1 (en) * | 2013-07-31 | 2015-02-05 | 富士フイルム株式会社 | Photoelectric conversion element, production method for photoelectric conversion element, and solar cell |
WO2015181918A1 (en) * | 2014-05-27 | 2015-12-03 | 株式会社Sat | Coating device and coating method |
CN105390613A (en) * | 2015-10-22 | 2016-03-09 | 湖北科技学院 | Method for preparing perovskite/oxide thin film electrode |
KR20160038534A (en) * | 2014-09-30 | 2016-04-07 | 코오롱인더스트리 주식회사 | Slot die and method for manufacturing organic solar cell by using the slot die |
CN105489775A (en) * | 2015-12-21 | 2016-04-13 | 成都新柯力化工科技有限公司 | Photovoltaic material with thin-layer perovskite structure and preparation method for photovoltaic material |
CN105882120A (en) * | 2016-05-11 | 2016-08-24 | 武汉理工大学 | Printer for perovskite solar cell |
CN106033797A (en) * | 2015-03-13 | 2016-10-19 | 北京大学 | Perovskite solar energy battery having organic skeleton structure and preparation method for the same |
KR101746335B1 (en) * | 2016-03-29 | 2017-06-21 | 포항공과대학교 산학협력단 | Method of fabricating metal halide perovskite nanocrystal particle layer and optoelectronic device using the same |
JP2017133048A (en) * | 2016-01-25 | 2017-08-03 | 国立大学法人金沢大学 | Film deposition apparatus, and film deposition method using the same |
US20170358759A1 (en) * | 2014-11-06 | 2017-12-14 | Postech Academy-Industry Foundation | Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same |
JP2017222640A (en) * | 2016-06-08 | 2017-12-21 | 株式会社リコー | Tertiary amine compound, photoelectric conversion element, and solar cell |
US20180015501A1 (en) * | 2014-12-17 | 2018-01-18 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Coating system and coating method |
CN107785488A (en) * | 2016-08-25 | 2018-03-09 | 杭州纤纳光电科技有限公司 | The equipment and its application method of the low pressure chemical deposition of perovskite thin film and application |
CN207103057U (en) * | 2017-06-02 | 2018-03-16 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film coating apparatus |
CN108383151A (en) * | 2018-03-07 | 2018-08-10 | 西安交通大学 | A kind of iodate lead material of morphology controllable and preparation method thereof |
-
2018
- 2018-09-05 CN CN201811028149.5A patent/CN110880550A/en active Pending
Patent Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0530751A1 (en) * | 1991-09-02 | 1993-03-10 | Fuji Photo Film Co., Ltd. | Coating method and apparatus |
CN1220673A (en) * | 1996-05-31 | 1999-06-23 | 美国3M公司 | Durable, low surface energy compounds and articles, apparatuses, and methods for using the same |
JP2000107668A (en) * | 1998-10-05 | 2000-04-18 | Konica Corp | Coater and coating method |
JP2004167365A (en) * | 2002-11-19 | 2004-06-17 | Seiko Epson Corp | Liquid feed device, liquid discharge device, liquid drop delivery device, electro-optical device, method for manufacturing electro-optical device and electronic unit |
US20120251726A1 (en) * | 2011-03-30 | 2012-10-04 | Kuniyasu Satoshi | Method of manufacturing film with coating |
US20140154485A1 (en) * | 2011-07-29 | 2014-06-05 | 3M Innovative Properties Company | Multilayer film having at least one thin layer and continuous process for forming such a film |
WO2013105534A1 (en) * | 2012-01-11 | 2013-07-18 | コニカミノルタ株式会社 | Thin film-forming method and thin film-forming device |
WO2015016201A1 (en) * | 2013-07-31 | 2015-02-05 | 富士フイルム株式会社 | Photoelectric conversion element, production method for photoelectric conversion element, and solar cell |
CN103611653A (en) * | 2013-12-13 | 2014-03-05 | 厦门惟华光能有限公司 | Coating machine for experiments of organic solar batteries |
WO2015181918A1 (en) * | 2014-05-27 | 2015-12-03 | 株式会社Sat | Coating device and coating method |
KR20160038534A (en) * | 2014-09-30 | 2016-04-07 | 코오롱인더스트리 주식회사 | Slot die and method for manufacturing organic solar cell by using the slot die |
US20170358759A1 (en) * | 2014-11-06 | 2017-12-14 | Postech Academy-Industry Foundation | Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same |
US20180015501A1 (en) * | 2014-12-17 | 2018-01-18 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Coating system and coating method |
CN106033797A (en) * | 2015-03-13 | 2016-10-19 | 北京大学 | Perovskite solar energy battery having organic skeleton structure and preparation method for the same |
CN105390613A (en) * | 2015-10-22 | 2016-03-09 | 湖北科技学院 | Method for preparing perovskite/oxide thin film electrode |
CN105489775A (en) * | 2015-12-21 | 2016-04-13 | 成都新柯力化工科技有限公司 | Photovoltaic material with thin-layer perovskite structure and preparation method for photovoltaic material |
JP2017133048A (en) * | 2016-01-25 | 2017-08-03 | 国立大学法人金沢大学 | Film deposition apparatus, and film deposition method using the same |
KR101746335B1 (en) * | 2016-03-29 | 2017-06-21 | 포항공과대학교 산학협력단 | Method of fabricating metal halide perovskite nanocrystal particle layer and optoelectronic device using the same |
CN105882120A (en) * | 2016-05-11 | 2016-08-24 | 武汉理工大学 | Printer for perovskite solar cell |
JP2017222640A (en) * | 2016-06-08 | 2017-12-21 | 株式会社リコー | Tertiary amine compound, photoelectric conversion element, and solar cell |
CN107785488A (en) * | 2016-08-25 | 2018-03-09 | 杭州纤纳光电科技有限公司 | The equipment and its application method of the low pressure chemical deposition of perovskite thin film and application |
CN207103057U (en) * | 2017-06-02 | 2018-03-16 | 杭州纤纳光电科技有限公司 | A kind of perovskite thin film coating apparatus |
CN108383151A (en) * | 2018-03-07 | 2018-08-10 | 西安交通大学 | A kind of iodate lead material of morphology controllable and preparation method thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111710784A (en) * | 2020-06-18 | 2020-09-25 | 浙江浙能技术研究院有限公司 | Perovskite suspension state precursor liquid and film forming method |
CN111710784B (en) * | 2020-06-18 | 2023-04-07 | 浙江浙能技术研究院有限公司 | Perovskite suspension state precursor liquid and film forming method |
CN112993167A (en) * | 2021-02-07 | 2021-06-18 | 重庆大学 | Application of organic ammonium salt modified metal oxide nanoparticles in positive perovskite solar cell and preparation method of device |
CN112993167B (en) * | 2021-02-07 | 2023-04-07 | 重庆大学 | Application of organic ammonium salt modified metal oxide nanoparticles in positive perovskite solar cell and preparation method of device |
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