CN110862082A - Manufacturing method of graphene nanoribbon and graphene nanoribbon - Google Patents
Manufacturing method of graphene nanoribbon and graphene nanoribbon Download PDFInfo
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- CN110862082A CN110862082A CN201911097304.3A CN201911097304A CN110862082A CN 110862082 A CN110862082 A CN 110862082A CN 201911097304 A CN201911097304 A CN 201911097304A CN 110862082 A CN110862082 A CN 110862082A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 153
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 152
- 239000002074 nanoribbon Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 62
- 238000000576 coating method Methods 0.000 claims abstract description 49
- 239000011248 coating agent Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 23
- -1 polytetrafluoroethylene Polymers 0.000 claims description 13
- 239000004642 Polyimide Substances 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000005162 X-ray Laue diffraction Methods 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000011065 in-situ storage Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 20
- 238000001035 drying Methods 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 2
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- 238000009825 accumulation Methods 0.000 description 1
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- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- 229910021642 ultra pure water Inorganic materials 0.000 description 1
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- 238000001291 vacuum drying Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
Abstract
A method for manufacturing a graphene nanoribbon and the graphene nanoribbon are provided, wherein the method comprises the following steps: providing a substrate; coating a graphene precursor coating on the substrate, and curing the graphene precursor coating; and forming light and dark stripes on the graphene precursor coating by utilizing laser interference, and converting the graphene precursor coating into graphene at the bright stripes. The method can realize large-area in-situ preparation of the graphene nanoribbon.
Description
Technical Field
The invention relates to the field of graphene material preparation, in particular to a method for manufacturing a graphene nanoribbon and the graphene nanoribbon manufactured by the method.
Background
With the rapid development of microelectronic technology, semiconductor devices are continuously pushed to high integration, high performance and multiple functions, and numerous new materials, new processes and new devices are emerging to be researched and explored urgently.
Graphene, as a special two-dimensional nanomaterial, attracts much attention since discovery, has excellent electrical properties, thermal properties and chemical stability, and is one of the ideal materials for replacing silicon in the post-molar era. However, intrinsic graphene has the characteristic of zero band gap, a conduction band and a valence band of the intrinsic graphene intersect in a brillouin zone, and the energy band is difficult to open and cannot be directly applied to the field of semiconductors, so that how to open and regulate the band gap of the intrinsic graphene is of great significance and gradually becomes a research hotspot in the field. At present, the methods for opening the graphene band gap mainly include: 1) by adsorption or doping with other elements; 2) by breaking the symmetry of the bilayer graphene; 3) the band gap is formed by making special graphene nanostructures (e.g., nanoribbons) using quantum confinement effects and edge effects. Among them, the method of making graphene into a nanoribbon can stably exist an energy band gap, and the size of the graphene band gap can be adjusted by adjusting the size of the nanoribbon, which is a stable and effective method and has attracted much attention.
At present, methods for preparing graphene nanoribbons include electron beam lithography, anisotropic chemical etching, carbon nanotube cutting, silicon carbide-based epitaxy, metal template growth, and the like.
However, the above methods are difficult to realize large-area preparation, complicated to operate, and prone to defects.
Disclosure of Invention
In view of this, the invention provides a method for manufacturing a graphene nanoribbon and a graphene nanoribbon, and the method can realize large-area in-situ preparation of the graphene nanoribbon.
The invention provides a method for manufacturing a graphene nanoribbon, which comprises the following steps:
providing a substrate;
coating a graphene precursor coating on the substrate, and curing the graphene precursor coating;
and forming light and dark stripes on the graphene precursor coating by utilizing laser interference, and converting the graphene precursor coating into graphene at the bright stripes.
Further, the material of the substrate includes glass, quartz, ceramic, polyimide, polymethyl methacrylate, polycarbonate, polytetrafluoroethylene, or polyvinylidene fluoride.
Further, the method also comprises the steps of cleaning the substrate and carrying out hydrophilization treatment.
Further, the graphene precursor solution includes a graphene oxide solution or a gold-doped graphene oxide composite solution.
Further, the concentration of the graphene oxide solution is 0.1 mg/mL-100 mg/mL.
Further, the gold doping amount of the gold-doped graphene oxide composite solution is 0.1% -1%.
Further, when laser interference is carried out, the method comprises the following steps:
expanding and collimating the laser;
dividing the laser after beam expansion and collimation into two beams by a spectroscope;
and respectively enabling the two beams of laser after passing through the spectroscope to pass through a reflector and then to be incident on the graphene precursor coating, and enabling the two beams of laser to interfere with each other to form light and shade alternate stripes on the graphene precursor coating.
Further, when laser interference is carried out, the method comprises the following steps:
expanding and collimating the laser;
passing the laser after beam expansion and collimation through a pinhole filter;
and enabling a part of laser passing through the pinhole filter to be incident on the Laue lens interference device, enabling the other part of laser to be directly incident on the graphene precursor coating, and enabling the laser directly incident on the graphene precursor coating to interfere with the laser reflected by the Laue lens interference device to form light and shade alternative fringes on the graphene precursor coating.
Further, the laser light wave is less than 400 nm; the average laser power is 10 mW-10W; the laser scanning speed is 100 mm/s-3000 mm/s.
The invention also provides the graphene nanoribbon prepared by the method.
In summary, in the present invention, a laser interference method is used to irradiate a laser onto a graphene precursor coating for interference, and after the interference of the laser, light and dark stripes occur, and at the bright stripes, due to the strong intensity of the light, the light can break the C — O bond in the graphene precursor, so that the graphene precursor is changed into graphene; in the dark stripe, the intensity of light is weak, so that the light is not enough to change the graphene precursor, and the graphene nanoribbon can be prepared. By the method, the graphene nanoribbon can be directly formed on the substrate, the operation is simple and flexible, the cost is low, the pattern transfer process is not needed, the large-area in-situ preparation is directly realized, meanwhile, the laser is used for directly converting the graphene precursor, the intervention of corrosive and toxic chemical reagents and a high-temperature environment is avoided, and the graphene cannot be damaged.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a graphene nanoribbon according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of laser interference according to a first embodiment of the present invention.
Fig. 3 is a schematic structural diagram illustrating a structure of the interfered laser beam irradiated onto the substrate according to the first embodiment of the present invention.
Fig. 4 is a schematic structural diagram of laser interference according to a second embodiment of the present invention.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description is given with reference to the accompanying drawings and preferred embodiments.
The invention provides a method for manufacturing a graphene nanoribbon and the graphene nanoribbon, and the method can realize large-area in-situ preparation of the graphene nanoribbon.
Fig. 1 is a schematic flow diagram illustrating a method for manufacturing a graphene nanoribbon according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram illustrating laser interference according to a first embodiment of the present invention. Fig. 3 is a schematic structural diagram of the interfered laser beam irradiated onto the substrate according to the first embodiment of the present invention, as shown in fig. 1 to 3.
The method for manufacturing the graphene nanoribbon comprises the following steps:
providing a substrate 10;
coating a graphene precursor coating 20 on a substrate 10, and curing the graphene precursor coating 20;
and forming light and dark stripes on the graphene precursor coating 20 by utilizing laser interference, and converting the graphene precursor coating 20 into graphene at the bright stripes so as to form the graphene nanoribbons.
In the embodiment, laser is irradiated onto the graphene precursor coating 20 by using a laser interference method to generate interference, and after the interference of the laser, light and shade alternate fringes can appear, and at the bright fringes, because the intensity of light is strong, the light can break a C-O bond in the graphene precursor, so that the graphene precursor is changed into graphene; in the dark stripe, the intensity of light is weak, so that the light is not enough to change the graphene precursor, and the graphene nanoribbon can be prepared. By the method, the graphene nanoribbon can be directly formed on the substrate 10, the operation is simple and flexible, the cost is low, the pattern transfer process is not needed, the large-area in-situ preparation is directly realized, meanwhile, the laser is used for directly converting the graphene precursor, the intervention of corrosive and toxic chemical reagents and a high-temperature environment is avoided, and the graphene cannot be damaged.
In the present embodiment, the material of the substrate 10 includes, but is not limited to, glass, quartz, ceramic, Polyimide (PI), polymethyl methacrylate (PMMA), Polycarbonate (PC), Polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), and the like.
Before the substrate 10 is coated with the graphene precursor coating 20, the substrate 10 needs to be cleaned with acetone, absolute ethyl alcohol, ultra-pure water, and the like to remove impurities and oil stains from the substrate 10. For a substrate with low surface energy and hydrophobicity, the substrate needs to be subjected to hydrophilization treatment by methods such as oxygen plasma etching, soaking with a mixed solution of hydrogen peroxide and sulfuric acid, and the like.
The graphene precursor solution may include graphene oxide derivatives such as a graphene oxide solution and a gold-doped graphene oxide composite solution. The concentration of the graphene oxide solution is preferably in the range of 0.1-100 mg/mL, the concentration of the graphene oxide solution is lower than 0.1mg/mL, so that a coated film is not easy to form, and the solution with the concentration higher than 100mg/mL is not uniformly dispersed, so that the quality of the film is influenced. The gold-doped amount of the gold-doped graphene oxide composite solution is preferably 0.1-1%, the conductivity is not remarkably increased below 0.1%, and the film forming quality is influenced above 1%.
When the graphene precursor coating 20 is applied, spin coating, spray coating, brush coating, dip-coating, or the like may be used. After the graphene precursor coating 20 is coated, it may be dried and cured by hot plate drying, hot oven drying, vacuum drying, or the like. The preferable range of the drying temperature is 60-150 ℃, the preferable range of the drying time is 1-5 min, and the temperature is lower than 60 ℃, so that the drying time is too long, and the efficiency is reduced; the temperature higher than 150 ℃ is easy to cause the decomposition of the internal components of the film, and the quality of the film is influenced.
As shown in fig. 2, in this embodiment, during laser interference, a laser light source may be expanded and collimated by a beam expanding collimator 31, then divided into two beams by a beam splitter 32, and then incident on a graphene precursor coating 20 after passing through a reflector 33, respectively, and interference occurs, so that light and dark stripes are formed on the graphene precursor coating.
When laser interference is carried out, the laser light wave is preferably less than 400nm, and when the laser wavelength is greater than 400nm, the single photon energy cannot break C-O bonds in most of graphene oxide, so that the reduction process is insufficient; the optimal range of the average laser power is 10 mW-10W, when the laser power is less than 10mW, the energy is not enough to penetrate through the bottom layer of the graphene precursor coating 20, the graphene line cannot be completely reduced, and when the laser power is more than 10W, the graphene precursor coating 20 is easily vaporized and evaporated directly, and the surface of the substrate 10 is damaged; the scanning speed is 100 mm/s-3000 mm/s, when the scanning speed is less than 100mm/s, the laser spot coupling rate is high, energy accumulation causes the graphene precursor coating 20 to be vaporized and evaporated, and when the scanning speed is more than 3000mm/s, the laser spot coupling rate is low, so that the pattern circuit is easy to be discontinuous.
Fig. 4 is a schematic structural diagram of laser interference according to a second embodiment of the present invention, and as shown in fig. 4, a manufacturing method of a graphene nanoribbon according to the second embodiment of the present invention is substantially the same as that of the first embodiment, except that in this embodiment, a laser interference method is different, and the laser interference method includes: carry out the laser beam and expand the collimation earlier to laser light source, then pass through pinhole filter 34 with laser, then some laser incides to the laoeger lens on interfering device 35, another part laser direct incidence is to graphite alkene precursor coating 20 on, the laser of direct incidence on graphite alkene precursor coating 20 interferes the laser after device 35 reflects through the laoeger lens and interferes the laser mutual interference, form the alternate stripe of light and shade on graphite alkene precursor coating 20, in bright stripe department, become graphite alkene precursor graphite alkene, then form graphite alkene nano strip on base plate 10.
The following describes a method for fabricating the graphene nanoribbon with specific examples:
example 1:
(1) cleaning the surface of the glass by sequentially adopting acetone, absolute ethyl alcohol and deionized water, then drying the glass by blowing, and drying the glass;
(2) coating 0.1mg/mL of graphene oxide aqueous solution on the surface of glass at the spin-coating speed of 1000rpm by adopting a spin-coating method;
(3) placing the glass coated with the graphene oxide solution on a hot plate at 150 ℃ for baking for 1min, and curing to form a stable film with the thickness of 1 mu m;
(4) the method comprises the steps of dividing laser into two beams by a spectroscope in a laser irradiation mode, and then enabling the two beams to be incident to the surface of glass coated with a graphene precursor through a reflector to form light and dark interference fringes, wherein the light intensity of the light fringes enables the graphene precursor to be converted into conductive graphene, and the light intensity of the dark fringes is not enough to enable the graphene precursor to change, so that a graphene nano strip is obtained. The laser output wavelength was 355nm, the laser output power was set to 10W, and the scanning speed was 3000 mm/s.
Example 2:
(1) cleaning the ceramic surface by sequentially adopting acetone, absolute ethyl alcohol and deionized water, then blow-drying and drying;
(2) coating 1mg/mL of gold-doped (0.2%) graphene oxide composite solution on the surface of the ceramic by adopting a spraying method and using the atomization air pressure of 0.5 MPa;
(3) placing the ceramic coated with the gold-doped graphene oxide composite solution in a hot oven at 90 ℃ for drying for 3min, and curing to form a stable film with the thickness of 10 mu m;
(4) a laser irradiation mode is used, a Laue mirror interference device is utilized, a light and shade alternate interference system is formed on the surface of the ceramic coated with the graphene precursor, the graphene precursor is converted into conductive graphene by light intensity of bright stripes, the graphene is not changed by light intensity of dark stripes, and therefore the graphene nano-strips are obtained. The laser output wavelength was 248nm, the laser output power was set to 10mW, and the scanning speed was 100 mm/s.
Example 3:
(1) sequentially cleaning the surface of the polyimide by using acetone, absolute ethyl alcohol and deionized water, then drying the polyimide by blowing, and drying the polyimide;
(2) coating 10mg/mL of gold-doped (1%) graphene oxide composite solution on the surface of polyimide at the speed of 30mm/s by adopting a brush coating method;
(3) placing the polyimide coated with the gold-doped graphene oxide composite solution in a vacuum box at 100 ℃ for drying for 2min, and curing to form a stable film with the thickness of 10 mu m;
(4) the method comprises the steps of dividing laser into two beams by a spectroscope in a laser irradiation mode, and then enabling the two beams to be incident to the surface of polyimide coated with a graphene precursor through a reflector to form light and dark interference fringes, wherein the light intensity of the light fringes enables the graphene precursor to be converted into conductive graphene, and the light intensity of the dark fringes is not enough to enable the graphene precursor to change, so that a graphene nano strip is obtained. The laser output wavelength was 260nm, the laser output power was set to 1W, and the scanning speed was 1000 mm/s.
Example 4:
(1) sequentially cleaning the surface of polytetrafluoroethylene by using acetone, absolute ethyl alcohol and deionized water, then blow-drying, drying and carrying out hydrophilic treatment on the surface by using oxygen plasma;
(2) coating 100g/mL of graphene oxide solution on the surface of polytetrafluoroethylene by adopting a spin coating method at the speed of 500 rpm;
(3) placing the polytetrafluoroethylene coated with the graphene oxide solution on a hot plate at 100 ℃ for baking for 2min, and curing to form a stable film with the thickness of 20 micrometers;
(4) the method comprises the steps of dividing laser into two beams by a spectroscope in a laser irradiation mode, and then enabling the two beams to be incident to the surface of polytetrafluoroethylene coated with a graphene precursor through a reflector to form light and dark interference fringes, wherein the light intensity of the light fringes enables the graphene precursor to be converted into conductive graphene, and the light intensity of the dark fringes is not enough to enable the graphene precursor to change, so that a graphene nano strip is obtained. The laser output wavelength was 260nm, the laser output power was set to 1W, and the scanning speed was 1000 mm/s.
The present invention also provides a graphene nanoribbon, which is manufactured by the method for manufacturing a graphene nanoribbon, and for other technical features of the graphene nanoribbon, reference is made to the prior art, and details are not repeated herein.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method for manufacturing a graphene nanoribbon is characterized by comprising the following steps: the method comprises the following steps:
providing a substrate;
coating a graphene precursor coating on the substrate, and curing the graphene precursor coating;
and forming light and dark stripes on the graphene precursor coating by utilizing laser interference, and converting the graphene precursor coating into graphene at the bright stripes.
2. The method of manufacturing a graphene nanoribbon according to claim 1, wherein: the material of the substrate includes glass, quartz, ceramic, polyimide, polymethyl methacrylate, polycarbonate, polytetrafluoroethylene, or polyvinylidene fluoride.
3. The method of manufacturing a graphene nanoribbon according to claim 1, wherein: the method further comprises cleaning and hydrophilizing the substrate.
4. The method of manufacturing a graphene nanoribbon according to claim 1, wherein: the graphene precursor solution comprises a graphene oxide solution or a gold-doped graphene oxide composite solution.
5. The method of manufacturing a graphene nanoribbon according to claim 4, wherein: the concentration of the graphene oxide solution is 0.1 mg/mL-100 mg/mL.
6. The method of manufacturing a graphene nanoribbon according to claim 4, wherein: the gold doping amount of the gold-doped graphene oxide composite solution is 0.1-1%.
7. The method of manufacturing a graphene nanoribbon according to claim 1, wherein: when laser interference is carried out, the method comprises the following steps:
expanding and collimating the laser;
dividing the laser after beam expansion and collimation into two beams by a spectroscope;
and respectively enabling the two beams of laser after passing through the spectroscope to pass through a reflector and then to be incident on the graphene precursor coating, and enabling the two beams of laser to interfere with each other to form light and shade alternate stripes on the graphene precursor coating.
8. The method of manufacturing a graphene nanoribbon according to claim 1, characterized in that: when laser interference is carried out, the method comprises the following steps:
expanding and collimating the laser;
passing the laser after beam expansion and collimation through a pinhole filter;
and enabling a part of laser passing through the pinhole filter to be incident on the Laue lens interference device, enabling the other part of laser to be directly incident on the graphene precursor coating, and enabling the laser directly incident on the graphene precursor coating to interfere with the laser reflected by the Laue lens interference device to form light and shade alternative fringes on the graphene precursor coating.
9. The method of manufacturing a graphene nanoribbon according to claim 7 or 8, wherein: the laser light wave is less than 400 nm; the average laser power is 10 mW-10W; the laser scanning speed is 100 mm/s-3000 mm/s.
10. A graphene nanoribbon, characterized in that: the graphene nanoribbon is produced by the method for producing a graphene nanoribbon according to any one of claims 1 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101721196A (en) * | 2008-10-24 | 2010-06-09 | 南京理工大学 | Corneal topography optical measurement device based on radial shear interference |
| US20150362470A1 (en) * | 2014-06-11 | 2015-12-17 | Gwangju Institute Of Science And Technology | Method of preparing graphene nanoribbon arrays and sensor comprising the same |
| CN107388981A (en) * | 2016-05-04 | 2017-11-24 | 沃柯有限公司 | For the device for the 3D structures for determining object |
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2019
- 2019-11-11 CN CN201911097304.3A patent/CN110862082A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101721196A (en) * | 2008-10-24 | 2010-06-09 | 南京理工大学 | Corneal topography optical measurement device based on radial shear interference |
| US20150362470A1 (en) * | 2014-06-11 | 2015-12-17 | Gwangju Institute Of Science And Technology | Method of preparing graphene nanoribbon arrays and sensor comprising the same |
| CN107388981A (en) * | 2016-05-04 | 2017-11-24 | 沃柯有限公司 | For the device for the 3D structures for determining object |
Non-Patent Citations (2)
| Title |
|---|
| HAO-BO JIANG ET AL.: "Moisture-Responsive Graphene Actuators Prepared by Two-Beam Laser Interference of Graphene Oxide Paper", 《FRONTIERS IN CHEMISTRY》 * |
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