CN110854247B - Blue light micro LED device with controllable emission direction based on MEMS scanning micro-mirror and preparation method thereof - Google Patents
Blue light micro LED device with controllable emission direction based on MEMS scanning micro-mirror and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
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Abstract
The invention discloses a blue light micro LED device with controllable emission direction based on an MEMS scanning micro mirror and a manufacturing method thereof, wherein a carrier is a sapphire substrate nitride wafer and a silicon-on-insulator (SOI) wafer, the sapphire substrate nitride wafer comprises a top layer nitride and a sapphire substrate layer positioned at the lower part of the top layer nitride, the sapphire substrate layer is stripped by a laser stripping technology, the top layer nitride and a nickel/gold electrode form an array type micro LED device, the top layer of the SOI wafer is provided with the MEMS scanning micro mirror, and the scanning micro mirror and the micro LED are integrated by an anode bonding technology.
Description
Technical Field
The invention relates to an LED device, in particular to a micro LED device preparation method, and belongs to the technical field of information materials and devices.
Background
The LED light source is used as a cold light source, and has great advantages compared with the traditional fluorescent lamp and incandescent lamp in the aspects of working voltage, energy consumption, illumination, working life and the like. Based on six hours of daily electric energy consumption calculation, considering bulb cost, service life and electricity charge, the LED lamp has the lowest total cost in twenty years compared with incandescent lamps, halogen lamps and energy-saving lamps. And the longer the illumination time is, the more obvious the cost advantage of the LED light source is. The LED lamp is used as a novel illumination light source and has the characteristics of energy conservation, health, environmental protection, long service life and the like.
The visible light communication is a wireless optical communication technology based on an LED device, and the visible light is used as an information carrier to realize wireless communication by utilizing the high-speed response characteristics of output optical power and driving current of the visible light communication. The visible light communication technology is green and low-carbon, can realize nearly zero-energy-consumption communication, can effectively avoid the defects of leakage of radio communication electromagnetic signals and the like, and quickly constructs an anti-interference and anti-interception safety information space. In the spectral range of visible light, the blue band has a shorter wavelength and a wider spectral band.
The LED device can be used for intelligent illumination, and is used as a light source device for emitting light signals in visible light communication, and is a key device of an intelligent illumination system.
Micro-electro-Mechanical-Systems (MEMS) integrating Micro-nano processing technology with Mechanical, optical, electrical, magnetic and other technologies is a research hotspot field which is rising in recent decades. The micro-probe has the characteristics of low power consumption, small volume, high sensitivity and the like, and is widely applied to the fields of aerospace, biomedicine, micro-probes, environmental monitoring and the like. Micro-opto-electro-mechanical systems (MOEMS) are an important branch of MEMS technology generated by the combination of optical and micro-electromechanical technologies, wherein optical MEMS sensors implement various functions such as information acquisition, information processing and information execution in micro-opto-electro-mechanical systems. At present, a major bottleneck restricting the application of visible light wireless communication technology is the miniaturization and miniaturization of the transceiver and the signal processing module. The monolithic integration of the LED light source and the MEMS scanning micro mirror can control the emission direction of the coverage range of the emergent light of the LED device, thereby regulating and controlling the coverage range of visible light wireless communication, and can also be applied to the self-adaptive intelligent illumination technology. The chip integrated by the MEMS scanning micro-mirror and the array blue light micro-LED lays a foundation for developing miniaturized integrated devices for intelligent illumination and visible light wireless communication.
Disclosure of Invention
The invention aims to provide a blue light micro LED device with controllable emission direction based on an MEMS scanning micro-mirror, which can be used as a light source for visible light communication or illumination display; and can also be used as a photoelectric receiving module in visible light communication.
The purpose of the invention is realized as follows: a blue light micro LED device with controllable emission direction based on an MEMS scanning micro-mirror comprises a sapphire substrate nitride wafer and an SOI wafer which are used as carriers, wherein the sapphire substrate nitride wafer comprises a sapphire substrate layer and a top layer nitride which is positioned above the sapphire substrate layer, the sapphire substrate layer is stripped through a laser stripping technology, the top layer nitride and a nickel/gold electrode form an array type micro LED device, the top layer of the SOI wafer is provided with the MEMS scanning micro-mirror, a positive electrode and a negative electrode of the micro LED device and a positive electrode and a negative electrode of the scanning micro-mirror are used as bonding points, and the sapphire substrate nitride wafer of the prepared array type micro LED device is bonded on the SOI wafer of the prepared scanning micro-mirror by utilizing an anode bonding technology; the micro mirror surface is fixed by two torsion beams, be the cavity that supplies the micro mirror activity under the mirror surface, the both sides of mirror surface are perpendicular broach structure, wherein the broach divide into fixed broach and movable broach, fixed broach is fixed on the substrate, and movable broach and mirror surface are as an organic whole, when adding static between movable broach and fixed broach, movable broach will be downstream under the effect of electrostatic force, it twists reverse to drive the torsion beam, thereby the mirror surface takes place to twist reverse, through the direction of shining of scanning micro mirror control array formula little LED device emergent light, thereby adjust the space coverage of little LED device, the adjustable light source that can be used to visible light communication or illumination demonstration usefulness.
As a further limitation of the present invention, the blue micro LED is an independent array LED device.
As a further limitation of the invention, the positive and negative electrodes are both nickel/gold electrodes.
A preparation method of a blue light micro LED device with controllable emission direction based on an MEMS scanning micro-mirror comprises the following steps:
selecting a sapphire substrate wafer of an epitaxial growth nitride layer, wherein the structure of the sapphire substrate wafer sequentially comprises a sapphire substrate, a buffer layer, an N-type GaN layer, a quantum well layer and a P-type GaN layer from bottom to top;
performing optical photoetching on the upper surface of the top layer nitride of the sapphire substrate nitride wafer to define an LED light-emitting area, and performing III-V reactive ion etching to expose an N-type nitride material area in the LED layer for preparing a negative electrode;
step (3) performing optical lithography on the upper surface of the top layer nitride of the sapphire substrate nitride wafer to define the area of the whole micro LED device, performing III-V group reactive ion etching to the sapphire substrate, and separating out the independent micro LED device;
performing optical photoetching on the upper surface of the top layer nitride of the sapphire substrate nitride wafer, defining the pattern structure of the positive and negative electrodes of the array LED device, and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain positive and negative electrodes of the array LED device;
step (6), performing electron beam lithography on the top silicon upper surface of the SOI wafer to define the graphic structure of the MEMS scanning micro-mirror;
etching the top silicon layer of the SOI wafer by adopting a reactive ion etching technology and using the graphical electron beam photoresist layer as a mask to obtain the structure of the MEMS scanning micro-mirror;
performing optical photoetching on the top silicon upper surface of the SOI wafer, defining the graphic structure of the positive and negative electrodes of the MEMS scanning micro-mirror, and depositing an aluminum/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain a positive electrode and a negative electrode of the MEMS scanning micro-mirror;
step (10), taking positive and negative electrodes of the micro LED device and positive and negative electrodes of the scanning micro mirror as bonding points, and bonding the sapphire substrate nitride wafer of the prepared array type micro LED device on the SOI wafer of the prepared scanning micro mirror by utilizing an anodic bonding technology;
the method comprises the following steps of (11) peeling off the sapphire substrate by using a laser peeling technology;
and (12) removing the silicon dioxide sacrificial layer below the top silicon layer of the SOI wafer by using a hydrofluoric acid gas etching process, and releasing the scanning micro-mirror.
As a further limitation of the present invention, in step (5), the pattern structure of the positive and negative electrodes of the LED device is defined by: and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology, and stripping by using an organic reagent acetone in an ultrasonic cleaning environment to obtain a graph structure of the positive electrode and the negative electrode of the LED device which can be used as a bonding point.
As a further limitation of the present invention, the bonding point is defined in the steps (8) and (9) by: and depositing an aluminum/gold composite metal layer by adopting an electron beam evaporation technology, and stripping by using organic acetone in an ultrasonic cleaning environment to obtain a graph structure of the positive and negative electrodes of the MEMS scanning micro-mirror which can be used as a bonding point.
Compared with the prior art, the invention has the following advantages:
the LED is used as a core device of the lighting technology, and has the advantages of energy conservation, environmental protection, high brightness, low cost and the like. The blue light LED is a key device for realizing white light illumination, and the blue light has the characteristics of high penetrability and wide spectrum, so that the blue light LED has great significance for the development of visible light communication technology. With the development of intelligent illumination and visible light communication technologies, the light source is required to realize large-space coverage and automatically adjust the direction and the space range irradiated by the light source; the space range covered by the emergent light of a single LED device is usually smaller, and the direction of the emergent light is also fixed.
The invention comprises sapphire substrate nitride and SOI wafer which are used as carriers, wherein the sapphire substrate top layer nitride and a nickel/gold electrode form an array type micro LED, the top layer of the SOI wafer is provided with an MEMS scanning micro mirror, and the sapphire substrate nitride wafer of the prepared array type micro LED device is bonded on the SOI wafer of the prepared scanning micro mirror by using an anodic bonding technology with a positive electrode and a negative electrode of the micro LED device and a positive electrode and a negative electrode of the scanning micro mirror as bonding points. The micro mirror surface is fixed by two torsion beams, and a cavity for the micro mirror to move is arranged under the mirror surface. The two sides of the mirror surface are vertical comb tooth structures, wherein the comb teeth are divided into fixed comb teeth and movable comb teeth. The fixed comb teeth are fixed on the substrate. The movable comb teeth and the mirror surface are integrated, when static electricity is added between the movable comb teeth and the fixed comb teeth, the movable comb teeth can move downwards under the action of the static electricity to drive the torsion beam to twist, so that the mirror surface is twisted, and the irradiation direction of emergent light of the array type micro LED device is controlled through the scanning micro mirror.
The array blue light micro LED device is bonded on the movable scanning micro mirror, and the direction of emergent light of one or more LED devices and the space range covered by the emergent light can be automatically adjusted; compared with the traditional fixed LED device, the LED device has larger emergent light coverage range and flexibility, and can provide larger communication coverage range and communication speed particularly when being used as a signal source for indoor visible light communication.
Drawings
Fig. 1 is a schematic top view of a single blue micro LED device based on a MEMS scanning micro mirror.
Fig. 2 is a schematic cross-sectional view of a single blue micro LED device based on a MEMS scanning micro-mirror.
FIG. 3 is a schematic diagram of an array blue micro LED device based on MEMS scanning micro mirror.
FIG. 4 is a flow chart of the fabrication of the MEMS scanning micro-mirror based array blue light micro-LED device.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
as shown in fig. 1-3, the invention designs a blue light micro LED device with controllable emission direction based on an MEMS scanning micro mirror, the carrier is a sapphire substrate nitride wafer 1 and an SOI wafer 2, the sapphire substrate nitride wafer is stripped by a laser stripping technique, a top layer nitride and a nickel/gold electrode 3 constitute an array type micro LED device, and the top layer of the SOI wafer 2 is provided with an MEMS scanning micro mirror 4;
the sapphire substrate nitride wafer 1 and the SOI wafer 2 are bonded and connected through an anodic bonding technology;
the sapphire substrate nitride wafer 1 is used for completely stripping the sapphire substrate by a laser stripping technology, and the top layer of the wafer is provided with an array type micro LED;
the top layer of the SOI wafer 2 is provided with an MEMS scanning micro mirror 4 and is positioned below the LED blue light emitting device on the top layer of the sapphire substrate nitride wafer 1 in the vertical direction after bonding;
in a specific implementation scene, a micro LED and MEMS micro-mirror device is integrated, voltage is applied to the micro-mirror, the micro-mirror is twisted, the emergent angle of a light beam can be adjusted, and the micro-mirror can be used as a light source for visible light communication or display; and can also be used as a photoelectric receiving module in visible light communication.
As shown in fig. 4, the invention also discloses a method for preparing a space scanning type blue light micro LED based on the MEMS micro-mirror, which comprises the following steps:
selecting a sapphire substrate wafer 1 with an epitaxially grown nitride layer, wherein the structure of the sapphire substrate wafer 1 sequentially comprises a sapphire substrate, a buffer layer, an N-type GaN layer, a quantum well layer and a P-type GaN layer from bottom to top;
performing optical photoetching on the upper surface of the top layer nitride of the sapphire substrate nitride wafer 1 to define an LED light-emitting area, and performing III-V group reactive ion etching to expose an N-type nitride material area in the LED layer for preparing a negative electrode;
step (3) performing optical lithography on the upper surface of the top layer nitride of the sapphire substrate nitride wafer 1 to define the area of the whole micro LED device, performing III-V group reactive ion etching to the sapphire substrate, and separating out the independent micro LED device;
performing optical photoetching on the upper surface of the top layer nitride of the sapphire substrate nitride wafer 1, defining the pattern structure of the positive and negative electrodes of the array LED device, and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain positive and negative electrodes of the array LED device;
step (6) electron beam lithography is carried out on the top silicon upper surface of the SOI wafer 2, and the graphic structure of the MEMS scanning micro-mirror is defined;
step (7) etching the top silicon of the SOI wafer 2 by adopting a reactive ion etching technology and using the graphical electron beam photoresist layer as a mask to obtain the structure of the MEMS scanning micro-mirror;
step (8) performing optical lithography on the top silicon upper surface of the SOI wafer 2, defining the graphic structure of the positive and negative electrodes of the MEMS scanning micro-mirror, and depositing an aluminum/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain a positive electrode and a negative electrode of the MEMS scanning micro-mirror;
step (10), taking positive and negative electrodes of the micro LED device and positive and negative electrodes of the scanning micro mirror as bonding points, and bonding the sapphire substrate nitride wafer of the prepared array type micro LED device on the SOI wafer of the prepared scanning micro mirror by utilizing an anodic bonding technology;
the method comprises the following steps of (11) peeling off the sapphire substrate by using a laser peeling technology;
and (12) removing the silicon dioxide sacrificial layer below the top silicon layer of the SOI wafer 2 by using a hydrofluoric acid gas etching process, and releasing the scanning micro-mirror.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that the modifications or substitutions within the technical scope of the present invention are included in the scope of the present invention, and therefore, the scope of the present invention should be subject to the protection scope of the claims.
Claims (6)
1. The blue light micro LED device with the controllable emission direction based on the MEMS scanning micro-mirror is characterized by comprising a sapphire substrate nitride wafer and an SOI wafer which are used as carriers, wherein the sapphire substrate nitride wafer comprises a sapphire substrate layer and a top layer nitride positioned above the sapphire substrate layer, the sapphire substrate layer is stripped through a laser stripping technology, the top layer nitride and a nickel/gold electrode form an array type micro LED device, the top layer of the SOI wafer is provided with the MEMS scanning micro-mirror, a positive electrode and a negative electrode of the micro LED device and a positive electrode and a negative electrode of the scanning micro-mirror are used as bonding points, and the sapphire substrate nitride wafer of the prepared array type micro LED device is bonded on the SOI wafer of the prepared scanning micro-mirror by utilizing an anode bonding technology; the micro mirror surface is fixed by two torsion beams, be the cavity that supplies the micro mirror activity under the mirror surface, the both sides of mirror surface are perpendicular broach structure, wherein the broach divide into fixed broach and movable broach, fixed broach is fixed on the substrate, and movable broach and mirror surface are as an organic whole, when adding static between movable broach and fixed broach, movable broach will be downstream under the effect of electrostatic force, it twists reverse to drive the torsion beam, thereby the mirror surface takes place to twist reverse, through the direction of shining of scanning micro mirror control array formula little LED device emergent light, thereby adjust the space coverage of little LED device, the adjustable light source that can be used to visible light communication or illumination demonstration usefulness.
2. The MEMS scanning micro-mirror based blue micro-LED device with controllable emission direction of claim 1, wherein the blue micro-LED is a stand-alone array LED device.
3. The MEMS scanning micromirror based blue light micro LED device of claim 1 wherein the positive and negative electrodes are both nickel/gold electrodes.
4. A method of making a micro LED device according to any of claims 1 to 3, comprising the steps of:
selecting a sapphire substrate wafer of an epitaxial growth nitride layer, wherein the structure of the sapphire substrate wafer sequentially comprises a sapphire substrate, a buffer layer, an N-type GaN layer, a quantum well layer and a P-type GaN layer from bottom to top;
performing optical photoetching on the upper surface of the top layer nitride of the sapphire substrate nitride wafer to define an LED light-emitting area, and performing III-V reactive ion etching to expose an N-type nitride material area in the LED layer for preparing a negative electrode;
step (3) performing optical lithography on the upper surface of the top layer nitride of the sapphire substrate nitride wafer to define the area of the whole micro LED device, performing III-V group reactive ion etching to the sapphire substrate, and separating out the independent micro LED device;
performing optical photoetching on the upper surface of the top layer nitride of the sapphire substrate nitride wafer, defining the pattern structure of the positive and negative electrodes of the array LED device, and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain positive and negative electrodes of the array LED device;
step (6), performing electron beam lithography on the top silicon upper surface of the SOI wafer to define the graphic structure of the MEMS scanning micro-mirror;
etching the top silicon layer of the SOI wafer by adopting a reactive ion etching technology and using the graphical electron beam photoresist layer as a mask to obtain the structure of the MEMS scanning micro-mirror;
performing optical photoetching on the top silicon upper surface of the SOI wafer, defining the graphic structure of the positive and negative electrodes of the MEMS scanning micro-mirror, and depositing an aluminum/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain a positive electrode and a negative electrode of the MEMS scanning micro-mirror;
step (10), taking positive and negative electrodes of the micro LED device and positive and negative electrodes of the scanning micro mirror as bonding points, and bonding the sapphire substrate nitride wafer of the prepared array type micro LED device on the SOI wafer of the prepared scanning micro mirror by utilizing an anodic bonding technology;
the method comprises the following steps of (11) peeling off the sapphire substrate by using a laser peeling technology;
and (12) removing the silicon dioxide sacrificial layer below the top silicon layer of the SOI wafer by using a hydrofluoric acid gas etching process, and releasing the scanning micro-mirror.
5. The method for preparing a micro LED device according to claim 4, wherein the pattern structure of the positive and negative electrodes of the LED device is defined in the step (5) by: and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology, and stripping by using an organic reagent acetone in an ultrasonic cleaning environment to obtain a graph structure of the positive electrode and the negative electrode of the LED device which can be used as a bonding point.
6. The method for preparing a micro LED device according to claim 4, wherein the bonding points are defined in the steps (8) and (9) by: and depositing an aluminum/gold composite metal layer by adopting an electron beam evaporation technology, and stripping by using organic acetone in an ultrasonic cleaning environment to obtain a graph structure of the positive and negative electrodes of the MEMS scanning micro-mirror which can be used as a bonding point.
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