CN110854232A - Novel laminated silicon quantum dot heterojunction solar cell and preparation method thereof - Google Patents
Novel laminated silicon quantum dot heterojunction solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN110854232A CN110854232A CN201910965968.0A CN201910965968A CN110854232A CN 110854232 A CN110854232 A CN 110854232A CN 201910965968 A CN201910965968 A CN 201910965968A CN 110854232 A CN110854232 A CN 110854232A
- Authority
- CN
- China
- Prior art keywords
- silicon
- quantum dot
- thickness
- film
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 167
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 167
- 239000010703 silicon Substances 0.000 claims abstract description 167
- 239000002070 nanowire Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 18
- 150000003376 silicon Chemical class 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000001704 evaporation Methods 0.000 claims abstract description 11
- 238000005019 vapor deposition process Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 102
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 21
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 101710134784 Agnoprotein Proteins 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910004074 SiF6 Inorganic materials 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000005336 cracking Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 2
- 230000005622 photoelectricity Effects 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
- H01L31/03125—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a novel laminated silicon quantum dot heterojunction solar cell and a preparation method thereof, belonging to the technical field of photoelectricity. The method comprises the following steps: etching the n-type silicon nanowire, and growing a p-type laminated graded band gap silicon quantum dot multilayer film on the n-type silicon substrate and the n-type silicon nanowire by a plasma enhanced vapor deposition process; preparing a graphene layer on the p-type laminated graded band gap silicon quantum dot multilayer film by a vapor deposition process; evaporating an Au electrode layer on the graphene layer; and evaporating an Al electrode layer on the back surface of the n-type silicon substrate. The invention forms a heterojunction structure, the cost of silicon materials can be saved by 30%, the gradual change band gap of the laminated silicon quantum dot multilayer film is utilized to widen the photoresponse range in the absorption layer, improve the photoelectric performance of devices and improve the photoelectric conversion efficiency of the cell to 7.4%.
Description
Technical Field
The invention relates to a novel laminated silicon quantum dot heterojunction solar cell and a preparation method thereof, belonging to the technical field of photoelectricity.
Background
With the continuous development of the new generation of solar cells, the nano-silicon structure is considered as a material capable of better adjusting the forbidden bandwidth to realize a wide spectral response, wherein the heterojunction solar cell formed by the nano-silicon structure and the monocrystalline silicon substrate has been a research hotspot of people with wide attention. On the one hand, however, the absorption efficiency for light is low due to the small thickness of the active layer. Thereby leading to lower photoelectric conversion efficiency (5-6%) of the nano silicon-monocrystalline silicon heterojunction solar cell. On the other hand, increasing the thickness of the active layer introduces more surface states and defect states into the device, resulting in a decrease in device performance. Therefore, it is necessary to explore an effective way to realize the broad spectrum absorption and response of thin film batteries by using nanotechnology.
Disclosure of Invention
In order to solve the technical problems, the invention discloses a novel laminated silicon quantum dot heterojunction solar cell and a preparation method thereof, and particularly relates to an n-type silicon/n-type silicon nanowire/p-type laminated graded band gap silicon quantum dot/graphene heterojunction solar cell based on a silicon nanowire light trapping structure and a laminated silicon quantum dot structure with graded band gap and a preparation method thereof, wherein the specific technical scheme is as follows:
the laminated silicon quantum dot heterojunction solar cell comprises an Al electrode layer at the bottom and an Au electrode layer at the top, wherein the Al electrode layer is evaporated on the surface of one side of an n-type silicon substrate, a plurality of n-type silicon nanowires (3) which are vertically distributed are etched on the surface of the other side of the n-type silicon substrate, the n-type silicon substrate and the n-type silicon nanowires are of an integral structure with the same material, a p-type laminated graded band gap silicon quantum dot multilayer film is uniformly deposited on the surfaces of the n-type silicon substrate and the n-type silicon nanowires, a graphene layer is laid on the surface of the p-type laminated graded band gap silicon quantum dot multilayer film, and the Au electrode layer is evaporated on the surface of the graphene layer.
Furthermore, the p-type laminated graded band gap silicon quantum dot multilayer film comprises 6 layers of silicon quantum dot films, the thicknesses of every two layers of silicon quantum dot films are consistent, three thickness specifications are provided, a silicon carbide film is arranged between every two adjacent silicon quantum dot films, the thickness of the silicon quantum dot film close to the n-type silicon substrate and one surface of the n-type silicon nanowire is the largest, and the silicon quantum dot film with the smallest thickness is close to the graphene layer.
Further, the thicknesses of the silicon quantum dot film are 8 nm, 4 nm and 2 nm in sequence, and the thickness of the silicon carbide film is 2 nm.
Further, the thickness of the Al electrode layer is 20 nm-100 nm; the height of the n-type silicon nanowire is 700 nm; the thickness of the p-type laminated graded band gap silicon quantum dot multilayer film is 56 nm; the thickness of the graphene layer is 30 nm; the thickness of the Au electrode layer is 20 nm.
The preparation method of the laminated silicon quantum dot heterojunction solar cell comprises the following steps:
first, etching of n-type silicon nanowires
Etching the n-type silicon nanowire (3) with a cylindrical structure on the n-type silicon substrate by a metal ion assisted chemical etching method;
secondly, preparing the p-type laminated gradient band gap silicon quantum dot multilayer film
Growing a p-type laminated graded band gap silicon quantum dot multilayer film on an n-type silicon substrate and an n-type silicon nanowire by a plasma enhanced vapor deposition process;
step three, preparing a graphene layer
Preparing a graphene layer on the p-type laminated graded band gap silicon quantum dot multilayer film by a vapor deposition process;
fourthly, evaporating an Au electrode layer on the graphene layer;
and fifthly, evaporating an Al electrode layer on the back surface of the n-type silicon substrate.
Further, in the first step, the specific process of chemically etching the silicon nanowire with the assistance of metal ions is as follows:
(1) 5M/L hydrofluoric acid (HF) and 0.02M/L silver nitrate (AgNO) are arranged in a plastic beaker3) Soaking the cleaned n-type silicon wafer in the mixed solution, and etching at room temperature until the etching depth of the etched n-type silicon wafer reaches 700nm, wherein the chemical reaction equation of the etching is 4Ag+(aq)+Si0(s)+6F-(aq)→4Ag(s)+SiF62-(aq)；
(2) And (3) soaking the etched silicon wafer in dilute nitric acid until the tree-shaped reaction residues on the surface are removed, and then washing and drying the silicon wafer by using deionized water to obtain the nanowire array structure vertically distributed on the silicon substrate, wherein the height of the nanowire array structure is 700 +/-30 nm.
Further, in the second step, the preparation process of the p-type laminated graded bandgap silicon quantum dot multilayer film is as follows:
(1) introducing hydrogen with the flow of 20sccm into the n-type silicon substrate with the etched n-type silicon nanowires, and pretreating for 5 minutes under the condition that the radio-frequency power is 20W;
(2) the reaction chamber was evacuated and methane (CH) was added4) And Silane (SiH)4) The flow ratio of the reaction gas R = [ CH4 ] is fixed by using the mixed gas of (1) as the reaction gas]/[SiH4]5sccm, preparing an amorphous silicon carbide thin film, wherein the deposition time is 20s, and the thickness of the deposited thin film is 2 nm, namely the silicon carbide thin film; then, the reaction chamber is evacuated and Silane (SiH) is introduced4) And borane (B)2H6) The mixed gas is used as a reaction gas, and the flow ratio R = [ B ] of the reaction gas is fixed2H6]/[SiH4]5sccm, depositing a boron-doped amorphous silicon thin film for 80 s, wherein the thickness of the deposited thin film is 8 nm, namely a silicon quantum dot thin film, and performing two periods alternately to form a silicon carbide thin film with the thickness of 2 nm, a silicon quantum dot thin film with the thickness of 8 nm, a silicon carbide thin film with the thickness of 2 nm and a silicon quantum dot thin film with the thickness of 8 nm alternately;
changing the deposition time to 40 s, depositing the boron-doped amorphous silicon film with the thickness of 4 nm, and alternately performing two periods of the two processes without changing the other processes to form a silicon carbide film with the thickness of 2 nm, a silicon quantum dot film with the thickness of 4 nm, a silicon carbide film with the thickness of 2 nm and a silicon quantum dot film with the thickness of 4 nm alternately;
finally, changing the deposition time to 20s, depositing a boron-doped amorphous silicon film with the thickness of 2 nm, then depositing an amorphous silicon carbide film with the thickness of 2 nm, and alternately performing two periods of the two processes without changing the other processes to form a silicon carbide film with the thickness of 2 nm, a silicon quantum dot film with the thickness of 2 nm, a silicon carbide film with the thickness of 2 nm and a silicon quantum dot film with the thickness of 2 nm, so that a boron-doped amorphous silicon/amorphous silicon carbide gradient structure multilayer film with the thicknesses of 8 nm, 4 nm and 2 nm from bottom to top is deposited, the substrate temperature is maintained at 250 ℃ in the whole growth process, and the radio frequency power is 30W;
(3) in order to prevent the p-type laminated gradient band gap silicon quantum dot multilayer film from cracking in subsequent high-temperature annealing, firstly, a boron-doped amorphous silicon/amorphous silicon carbide gradient structure multilayer film sample prepared in the process is subjected to constant-temperature dehydrogenation treatment to enable a large amount of hydrogen contained in the multilayer film to stably escape from the film, the constant-temperature dehydrogenation treatment temperature is 450 ℃, the time is 1 hour,
then, carrying out high-temperature annealing treatment on the sample subjected to dehydrogenation treatment, wherein due to the restrictive crystallization principle, the boron-doped amorphous silicon sublayer is subjected to crystallization nucleation and is longitudinally limited by the silicon carbide layers on two sides to form silicon quantum dots with controllable size, the annealing temperature is 1000 ℃, the annealing time is 1 hour,
in order to ensure that the p-type laminated graded band gap silicon quantum dot multilayer film is not oxidized in the high-temperature treatment process, the dehydrogenation and annealing processes are carried out under the atmosphere of high-purity nitrogen.
Further, in the third step, a graphene layer is prepared on the p-type laminated graded band gap silicon quantum dot multilayer film by a chemical vapor deposition CVD method, and in the growth process, mixed gas of methane and hydrogen is introduced, and the gas flow ratio CH4:H210sccm, a vacuum degree of 3 Torr, and a growth temperature of 1000 ℃ until a graphene layer with a thickness of 30nm is obtained.
The invention has the beneficial effects that:
the n-type silicon, the n-type silicon nanowire, the p-type laminated graded band gap silicon quantum dot and the graphene layer form a heterojunction structure, and compared with the traditional silicon-based thin-film solar cell (the active layer is about 200 nm), the solar cell with the heterojunction structure has the advantage that the production cost (silicon material cost) can be saved by 30%.
The solar cell has simple design and preparation process and low material consumption, and can effectively reduce the production cost of the traditional silicon-based thin-film solar cell.
The method of the invention enhances the light absorption in the absorption layer by utilizing the light trapping effect of the nanowire structure, widens the light response range in the absorption layer by utilizing the gradual change band gap of the laminated silicon quantum dot multilayer film, improves the photoelectric performance of the device and improves the photoelectric conversion efficiency of the battery to 7.4 percent.
Drawings
Figure 1 is an enlarged perspective view of the present invention,
figure 2 is a cross-sectional view of the present invention,
figure 3 is a side cross-sectional view of the p-type stacked graded bandgap silicon quantum dot multilayer film of figure 2,
reference numerals: the silicon quantum dot structure comprises 1-Al electrode layer, 2-n type silicon substrate, 3-n type silicon nanowire, 4-p type laminated gradient band gap silicon quantum dot multilayer film, 5-graphene layer and 6-Au electrode layer.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
As shown in fig. 1, the laminated silicon quantum dot heterojunction solar cell includes an Al electrode layer 1 at the bottom and an Au electrode layer 6 at the top, the Al electrode layer 1 is evaporated on one side surface of an n-type silicon substrate 2, a plurality of n-type silicon nanowires 3 vertically distributed are etched on the other side surface of the n-type silicon substrate 2, the n-type silicon substrate 2 and the n-type silicon nanowires 3 are of an integral structure with the same material, a p-type laminated graded band gap silicon quantum dot multilayer film 4 is uniformly deposited on the surfaces of the n-type silicon substrate 2 and the n-type silicon nanowires 3, a graphene layer 5 is laid on the surface of the p-type laminated graded band gap silicon quantum dot multilayer film 4, and the Au electrode layer 6 is evaporated on the surface of the graphene layer 5.
As can be seen from fig. 1 and 2, the Al electrode layer 1, the n-type silicon substrate 2, the n-type silicon nanowire 3, the p-type laminated graded band gap silicon quantum dot multilayer film 4, the graphene layer 5, and the Au electrode layer 6 are sequentially stacked from bottom to top. The thickness of the Al electrode layer 1 is 20 nm-100 nm; the height of the n-type silicon nanowire 3 is 700 nm; the thickness of the p-type laminated gradient band gap silicon quantum dot multilayer film 4 is 56 nm; the thickness of the graphene layer 5 is 30 nm; the thickness of the Au electrode layer 6 was 20 nm.
As can be seen by combining the attached figure 3, the p-type laminated graded band gap silicon quantum dot multilayer film 4 comprises 6 layers of silicon quantum dot films, the upper two layers are 2 nm silicon quantum dot films, the middle two layers are 4 nm silicon quantum dot films, the lower two layers are 8 nm silicon quantum dot films, and a silicon-rich silicon carbide film with the thickness of 2 nm is arranged between the layers. The light absorption in the absorption layer is enhanced by utilizing the light trapping effect of the nanowire structure, the light response range in the absorption layer is widened by utilizing the gradually-changed band gap of the laminated silicon quantum dot multilayer film, and the photoelectric performance of the device is improved.
The invention relates to a preparation method of a laminated silicon quantum dot heterojunction solar cell, which comprises the following steps:
first, etching of n-type silicon nanowires 3
Etching an n-type silicon nanowire 3 with a cylindrical structure on an n-type silicon substrate 2 by a metal ion assisted chemical etching method, which comprises the following specific steps:
(1) 5M/L hydrofluoric acid (HF) and 0.02M/L silver nitrate (AgNO) are arranged in a plastic beaker3) Soaking the cleaned n-type silicon wafer in the mixed solution, and etching at room temperature for 5 min to obtain an etched n-type silicon wafer with an etching depth of 700nm and an etching chemical reaction equation of 4Ag+(aq)+Si0(s)+6F-(aq)→4Ag(s)+SiF62-(aq)；
(2) And (3) soaking the etched silicon wafer in dilute nitric acid for 15 min to remove 'tree-like' reaction residues on the surface, then washing with deionized water, and drying to obtain the vertically distributed nanowire array structure on the silicon substrate, wherein the height is about 700 +/-30 nm.
Secondly, preparing a p-type laminated gradient band gap silicon quantum dot multilayer film 4
A p-type laminated graded band gap silicon quantum dot multilayer film 4 grows on an n-type silicon substrate 2 and an n-type silicon nanowire 3 through a plasma enhanced vapor deposition process, and the preparation process is as follows:
(1) placing the n-type silicon substrate 2 with the etched n-type silicon nanowires 3 in Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, introducing hydrogen with the flow of 20sccm, and pretreating for 5 minutes under the condition that the radio-frequency power is 20W;
(2) the reaction chamber was evacuated and methane (CH) was added4) And Silane (SiH)4) The flow ratio of the reaction gas R = [ CH4 ] is fixed by using the mixed gas of (1) as the reaction gas]/[SiH4]5sccm, preparing an amorphous silicon carbide thin film, wherein the deposition time is 20s, and the thickness of the deposited thin film is 2 nm, namely the silicon carbide thin film; then, the reaction chamber is evacuated and Silane (SiH) is introduced4) And borane (B)2H6) The mixed gas is used as a reaction gas, and the flow ratio R = [ B ] of the reaction gas is fixed2H6]/[SiH4]5sccm, depositing a boron-doped amorphous silicon thin film for 80 s, wherein the thickness of the deposited thin film is 8 nm, namely a silicon quantum dot thin film, and performing two periods alternately to form a silicon carbide thin film with the thickness of 2 nm, a silicon quantum dot thin film with the thickness of 8 nm, a silicon carbide thin film with the thickness of 2 nm and a silicon quantum dot thin film with the thickness of 8 nm alternately;
changing the deposition time to 40 s, depositing the boron-doped amorphous silicon film with the thickness of 4 nm, and alternately performing two periods of the two processes without changing the other processes to form a silicon carbide film with the thickness of 2 nm, a silicon quantum dot film with the thickness of 4 nm, a silicon carbide film with the thickness of 2 nm and a silicon quantum dot film with the thickness of 4 nm alternately;
finally, changing the deposition time to 20s, depositing a boron-doped amorphous silicon film with the thickness of 2 nm, then depositing an amorphous silicon carbide film with the thickness of 2 nm, and alternately performing two periods of the two processes without changing the other processes to form a silicon carbide film with the thickness of 2 nm, a silicon quantum dot film with the thickness of 2 nm, a silicon carbide film with the thickness of 2 nm and a silicon quantum dot film with the thickness of 2 nm, so that a boron-doped amorphous silicon/amorphous silicon carbide gradient structure multilayer film with the thicknesses of 8 nm, 4 nm and 2 nm from bottom to top is deposited, the substrate temperature is maintained at 250 ℃ in the whole growth process, and the radio frequency power is 30W;
(3) in order to prevent the p-type laminated graded band gap silicon quantum dot multilayer film 4 from cracking in subsequent high-temperature annealing, firstly, the boron-doped amorphous silicon/amorphous silicon carbide graded structure multilayer film sample prepared in the process 2 is subjected to constant-temperature dehydrogenation treatment to enable a large amount of hydrogen contained in the multilayer film to stably escape from the film, the constant-temperature dehydrogenation treatment temperature is 450 ℃, the time is 1 hour,
then, carrying out high-temperature annealing treatment on the sample subjected to dehydrogenation treatment, wherein due to the restrictive crystallization principle, the boron-doped amorphous silicon sublayer is subjected to crystallization nucleation and is longitudinally limited by the silicon carbide layers on two sides to form silicon quantum dots with controllable size, the annealing temperature is 1000 ℃, the annealing time is 1 hour,
in order to ensure that the p-type laminated graded band gap silicon quantum dot multilayer film 4 is not oxidized in the high-temperature treatment process, the dehydrogenation and annealing processes are carried out under the atmosphere of high-purity nitrogen.
Thirdly, preparing the graphene layer 5
Preparing a graphene layer on the p-type laminated gradient band gap silicon quantum dot multilayer film 4 by a chemical vapor deposition CVD method, and introducing a mixed gas of methane and hydrogen in the growth process to obtain a gas flow ratio CH4: H210sccm in vacuum degree of 3 Torr, and the growth temperature is controlled at 1000 ℃ for 10 min until a graphene layer with a thickness of 30nm is obtained.
Fourthly, an Au electrode layer 6 is vapor-plated on the graphene layer 5, wherein the thickness of the Au electrode layer 6 is 20 nm; the evaporation process is a conventional evaporation method, pure Au is heated to be changed into steam, and the steam is evaporated on the surface of the graphene layer 5 in a vacuum environment or an inert protective gas environment.
And fifthly, evaporating an Al electrode layer 1 on the back surface of the n-type silicon substrate 2, wherein the thickness of the Al electrode layer 1 is 20-100 nm, the evaporation process is a conventional evaporation method, pure Al is heated to be changed into steam, and the steam is evaporated on the surface of the n-type silicon substrate 2 in a vacuum environment or an inert protective gas environment.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (8)
1. The laminated silicon quantum dot heterojunction solar cell is characterized in that: the graphene-based multilayer silicon quantum dot structure comprises an Al electrode layer (1) at the bottom and an Au electrode layer (6) at the top, wherein the Al electrode layer (1) is evaporated on the surface of one side of an n-type silicon substrate (2), a plurality of n-type silicon nanowires (3) which are vertically distributed are etched on the surface of the other side of the n-type silicon substrate (2), the n-type silicon substrate (2) and the n-type silicon nanowires (3) are of an integral structure with the same material, a p-type laminated gradient band gap silicon quantum dot multilayer film (4) is uniformly deposited on the surfaces of the n-type silicon substrate (2) and the n-type silicon nanowires (3), a graphene layer (5) is laid on the surface of the p-type laminated gradient band gap silicon quantum dot multilayer film (4), and the Au electrode layer (6) is evaporated on the surface.
2. The tandem silicon quantum dot heterojunction solar cell of claim 1, wherein: the p-type laminated graded band gap silicon quantum dot multilayer film (4) comprises 6 layers of silicon quantum dot films, the thicknesses of every two layers of silicon quantum dot films are consistent, three thickness specifications are provided, a silicon carbide film is arranged between every two adjacent silicon quantum dot films, the silicon quantum dot film with the largest thickness is arranged on one surface close to the n-type silicon substrate (2) and the n-type silicon nanowire (3), and the silicon quantum dot film with the smallest thickness is close to the graphene layer (5).
3. The tandem silicon quantum dot heterojunction solar cell of claim 2, wherein: the thickness of the silicon quantum dot film is 8 nm, 4 nm and 2 nm in sequence, and the thickness of the silicon carbide film is 2 nm.
4. The tandem silicon quantum dot heterojunction solar cell of claim 1, wherein: the thickness of the Al electrode layer (1) is 20 nm-100 nm; the height of the n-type silicon nanowire (3) is 700 nm; the thickness of the p-type laminated graded band gap silicon quantum dot multilayer film (4) is 56 nm; the thickness of the graphene layer (5) is 30 nm; the thickness of the Au electrode layer (6) is 20 nm.
5. The preparation method of the laminated silicon quantum dot heterojunction solar cell is characterized by comprising the following steps of: the method comprises the following steps:
first step, etching of n-type silicon nanowires (3)
Etching an n-type silicon nanowire (3) with a cylindrical structure on an n-type silicon substrate (2) by a metal ion assisted chemical etching method;
secondly, preparing a p-type laminated gradient band gap silicon quantum dot multilayer film (4)
Growing a p-type laminated graded band gap silicon quantum dot multilayer film (4) on an n-type silicon substrate (2) and an n-type silicon nanowire (3) by a plasma enhanced vapor deposition process;
thirdly, preparing a graphene layer (5)
Preparing a graphene layer (5) on the p-type laminated graded band gap silicon quantum dot multilayer film (4) by a vapor deposition process;
fourthly, evaporating an Au electrode layer (6) on the graphene layer (5);
and fifthly, evaporating an Al electrode layer (1) on the back surface of the n-type silicon substrate (2).
6. The method for preparing a tandem silicon quantum dot heterojunction solar cell according to claim 5, wherein:
in the first step, the specific process of chemically etching the silicon nanowire with the assistance of metal ions is as follows:
(1) in plastic burningThe cup is filled with 5M/L hydrofluoric acid (HF) and 0.02M/L silver nitrate (AgNO)3) Soaking the cleaned n-type silicon wafer in the mixed solution, and etching at room temperature until the etching depth of the etched n-type silicon wafer reaches 700nm, wherein the chemical reaction equation of the etching is 4Ag+(aq)+Si0(s)+6F-(aq)→4Ag(s)+SiF62-(aq)；
(2) And (3) soaking the etched silicon wafer in dilute nitric acid until the tree-shaped reaction residues on the surface are removed, and then washing and drying the silicon wafer by using deionized water to obtain the nanowire array structure vertically distributed on the silicon substrate, wherein the height of the nanowire array structure is 700 +/-30 nm.
7. The method for preparing a tandem silicon quantum dot heterojunction solar cell according to claim 5, wherein:
in the second step, the preparation process of the p-type laminated graded band gap silicon quantum dot multilayer film (4) is as follows:
(1) placing the n-type silicon substrate (2) with the etched n-type silicon nanowires (3) in a reaction chamber, introducing hydrogen with the flow of 20sccm, and pretreating for 5 minutes under the condition that the radio-frequency power is 20W;
(2) the reaction chamber was evacuated and methane (CH) was added4) And Silane (SiH)4) The flow ratio of the reaction gas R = [ CH4 ] is fixed by using the mixed gas of (1) as the reaction gas]/[SiH4]5sccm, preparing an amorphous silicon carbide thin film, wherein the deposition time is 20s, and the thickness of the deposited thin film is 2 nm, namely the silicon carbide thin film; then, the reaction chamber is evacuated and Silane (SiH) is introduced4) And borane (B)2H6) The mixed gas is used as a reaction gas, and the flow ratio R = [ B ] of the reaction gas is fixed2H6]/[SiH4]5sccm, depositing a boron-doped amorphous silicon thin film for 80 s, wherein the thickness of the deposited thin film is 8 nm, namely a silicon quantum dot thin film, and performing two periods alternately to form a silicon carbide thin film with the thickness of 2 nm, a silicon quantum dot thin film with the thickness of 8 nm, a silicon carbide thin film with the thickness of 2 nm and a silicon quantum dot thin film with the thickness of 8 nm alternately;
changing the deposition time to 40 s, depositing the boron-doped amorphous silicon film with the thickness of 4 nm, and alternately performing two periods of the two processes without changing the other processes to form a silicon carbide film with the thickness of 2 nm, a silicon quantum dot film with the thickness of 4 nm, a silicon carbide film with the thickness of 2 nm and a silicon quantum dot film with the thickness of 4 nm alternately;
finally, changing the deposition time to 20s, depositing a boron-doped amorphous silicon film with the thickness of 2 nm, then depositing an amorphous silicon carbide film with the thickness of 2 nm, and alternately performing two periods of the two processes without changing the other processes to form a silicon carbide film with the thickness of 2 nm, a silicon quantum dot film with the thickness of 2 nm, a silicon carbide film with the thickness of 2 nm and a silicon quantum dot film with the thickness of 2 nm, so that a boron-doped amorphous silicon/amorphous silicon carbide gradient structure multilayer film with the thicknesses of 8 nm, 4 nm and 2 nm from bottom to top is deposited, the substrate temperature is maintained at 250 ℃ in the whole growth process, and the radio frequency power is 30W;
(3) in order to prevent the p-type laminated graded band gap silicon quantum dot multilayer film (4) from cracking in subsequent high-temperature annealing, firstly, the boron-doped amorphous silicon/amorphous silicon carbide graded structure multilayer film sample prepared in the process (2) is subjected to constant-temperature dehydrogenation treatment to enable a large amount of hydrogen contained in the multilayer film to stably escape from the film, the constant-temperature dehydrogenation treatment temperature is 450 ℃, the time is 1 hour,
then, carrying out high-temperature annealing treatment on the sample subjected to dehydrogenation treatment, wherein due to the restrictive crystallization principle, the boron-doped amorphous silicon sublayer is subjected to crystallization nucleation and is longitudinally limited by the silicon carbide layers on two sides to form silicon quantum dots with controllable size, the annealing temperature is 1000 ℃, the annealing time is 1 hour,
in order to ensure that the p-type laminated graded band gap silicon quantum dot multilayer film (4) is not oxidized in the high-temperature treatment process, the dehydrogenation and annealing processes are carried out under the atmosphere of high-purity nitrogen.
8. The method for preparing a tandem silicon quantum dot heterojunction solar cell according to claim 5, wherein:
in the third step, a multilayer film of p-type laminated graded band gap silicon quantum dots is prepared by a chemical vapor deposition CVD method(4) Growing graphene layer on the substrate, introducing a mixed gas of methane and hydrogen in the growth process, wherein the gas flow ratio is CH4: H210sccm, a vacuum degree of 3 Torr, and a growth temperature of 1000 ℃ until a graphene layer with a thickness of 30nm is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910965968.0A CN110854232A (en) | 2019-10-12 | 2019-10-12 | Novel laminated silicon quantum dot heterojunction solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910965968.0A CN110854232A (en) | 2019-10-12 | 2019-10-12 | Novel laminated silicon quantum dot heterojunction solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110854232A true CN110854232A (en) | 2020-02-28 |
Family
ID=69598021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910965968.0A Pending CN110854232A (en) | 2019-10-12 | 2019-10-12 | Novel laminated silicon quantum dot heterojunction solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110854232A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157577A (en) * | 2011-01-31 | 2011-08-17 | 常州大学 | Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof |
| CN103000742A (en) * | 2012-12-04 | 2013-03-27 | 南京大学 | Solar battery with band gap gradual changing silicon quantum dot multilayer film and production method thereof |
| CN103219413A (en) * | 2013-04-10 | 2013-07-24 | 中国科学院微电子研究所 | Grapheme radial heterojunction solar cell and preparation method thereof |
| CN109037392A (en) * | 2018-06-05 | 2018-12-18 | 江苏华富储能新技术股份有限公司 | A kind of production technology of graphene/silicon structure solar battery |
-
2019
- 2019-10-12 CN CN201910965968.0A patent/CN110854232A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157577A (en) * | 2011-01-31 | 2011-08-17 | 常州大学 | Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof |
| CN103000742A (en) * | 2012-12-04 | 2013-03-27 | 南京大学 | Solar battery with band gap gradual changing silicon quantum dot multilayer film and production method thereof |
| CN103219413A (en) * | 2013-04-10 | 2013-07-24 | 中国科学院微电子研究所 | Grapheme radial heterojunction solar cell and preparation method thereof |
| CN109037392A (en) * | 2018-06-05 | 2018-12-18 | 江苏华富储能新技术股份有限公司 | A kind of production technology of graphene/silicon structure solar battery |
Non-Patent Citations (1)
| Title |
|---|
| JONG MIN KIM等: "Si-quantum-dot heterojunction solar cells with 16.2% efficiency achieved by employing doped-graphene transparent conductive electrodes", 《NANO ENERGY》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103000742B (en) | A kind of solar cell of band gap gradual change silicon quantum dot multilayer film and preparation method | |
| JP2008177539A5 (en) | ||
| JP2010517271A (en) | Multijunction solar cell and method and apparatus for forming the same | |
| WO2013086482A1 (en) | Metal silicide nanowire arrays for anti-reflective electrodes in photovoltaics | |
| US8207013B2 (en) | Method of fabricating silicon nanowire solar cell device having upgraded metallurgical grade silicon substrate | |
| CN101950762A (en) | Silicon-based solar cell and fabrication method thereof | |
| KR101100414B1 (en) | Solar cell and manufacturing method of the same | |
| CN105870253B (en) | A kind of WS2/ Si heterojunction solar battery preparation methods | |
| Liu et al. | Ge quantum-dot enhanced c-Si solar cell for improved light trapping efficiency | |
| KR101368808B1 (en) | Crystalline silicon solar cell comprising CNT layer and manufacturing method thereof | |
| CN109037392A (en) | A kind of production technology of graphene/silicon structure solar battery | |
| US9911892B2 (en) | Method for the low-temperature production of radial-junction semiconductor nanostructures, radial junction device, and solar cell including radial-junction nanostructures | |
| CN110854232A (en) | Novel laminated silicon quantum dot heterojunction solar cell and preparation method thereof | |
| CN112259631B (en) | Silicon carbide cell | |
| CN110416336B (en) | Novel nano-structure thin-film solar cell and preparation method thereof | |
| Pudasaini et al. | High performance nanopillars array silicon solar cells | |
| CN110120434A (en) | Cell piece and preparation method thereof | |
| CN110854215A (en) | P-type laminated gradient band gap silicon quantum dot multilayer film and preparation method and application thereof | |
| CN101245488A (en) | Method for growing nanocrystalline silicon in critical condition | |
| Wang et al. | Radial junction silicon nanowire photovoltaics with heterojunction with intrinsic thin layer (HIT) structure | |
| Kurokawa et al. | Observation of the photovoltaics effect from the solar cells using silicon quantum dots superlattice as a light absorption layer | |
| CN104919094B (en) | For photovoltaic device or similar etc. thick polysilicon film and the method for preparing it | |
| CN104393120B (en) | Preparation method and purpose of top cell P type layer of amorphous silicon germanium thin-film solar cell | |
| JP2000058889A (en) | Silicon base thin film and silicon base thin film photoelectric converter | |
| CN209981236U (en) | Silicon-based indium nitride solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |