CN110854039A - Stack bonding wafer processing apparatus - Google Patents
Stack bonding wafer processing apparatus Download PDFInfo
- Publication number
- CN110854039A CN110854039A CN201910940808.0A CN201910940808A CN110854039A CN 110854039 A CN110854039 A CN 110854039A CN 201910940808 A CN201910940808 A CN 201910940808A CN 110854039 A CN110854039 A CN 110854039A
- Authority
- CN
- China
- Prior art keywords
- wafer
- edge
- glue
- stacked
- bonded wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
Abstract
A stack bonded wafer processing tool, comprising: the device comprises a glue injection unit and a reduction unit, wherein the glue injection unit is used for injecting glue to the edge of the stacked bonded wafer, and the reduction unit is used for simultaneously cutting and removing the edge of the stacked bonded wafer with partial width and the glue injected from the edge. When the stacked bonded wafer processing machine station processes the multilayer stacked bonded wafer, after glue injection and grinding are carried out on two bonded wafers each time, glue injection removing and cutting (cutting) steps are not needed, after the multilayer stacked bonded wafer is formed, the cutting unit is used for carrying out a further cutting process to simultaneously cut and remove the edge of the partial width of the stacked bonded wafer and glue injected into the edge, so that excessive wafer edge cutting caused by multiple times of cutting in the manufacturing process of the multilayer stacked wafer can be avoided, and further excessive yield loss is avoided.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a stacking bonding wafer processing device.
Background
With the advent of the stacked chip era, edge trimming (edge trimming) technology is becoming increasingly important. The wafer edge trimming is to trim a portion of the edge of the stacked wafer by using a blade (trimming blade) to remove the abnormal portion of the stacked wafer.
One existing abatement process includes: providing a first wafer and a second wafer; bonding the first wafer and the second wafer to form a stacked bonded wafer; thinning a second wafer in the stacked bonded wafers; and after thinning, removing the edge of the partial width of the stacked bonded wafer so as to remove the abnormal edge part in the stacked bonded wafer.
When there is a multi-layer wafer stack, the edge defect portion must be removed every wafer bonding stack and thinning process, so the edge defect portion is considerable after the multi-layer wafer stack, and the yield loss is caused.
Disclosure of Invention
The invention aims to solve the technical problem of how to improve the success rate of bonding resolution.
The invention provides a stacking and bonding wafer processing machine platform, which comprises:
the glue injection unit is used for injecting glue to the edge of the stacked bonded wafer;
and the cutting unit is used for simultaneously cutting and removing the edge of the partial width of the stacked bonded wafer and the colloid injected into the edge.
Optionally, the glue injection unit includes a glue injection module and a hardening module, the glue injection module is configured to inject fluid-like glue into an edge of the stacked bonded wafer, and the hardening module is configured to harden the injected glue to form a glue body.
Optionally, the hardening module is an infrared heating module, and the injected colloid is heated by thermal radiation so as to be hardened.
Optionally, the abatement unit comprises a blade module and a lubricant supply module, the blade module comprises a blade and a control module connected with the blade, the control module controls the blade to rotate to cut and remove the partial width edge of the stacked bonded wafer and the glue injected from the edge, and the lubricant supply module is used for supplying lubricant to the cutting position during cutting.
Optionally, the reducing unit further includes: and the wafer carrying platform is used for fixing the stacked bonded wafer and driving the stacked bonded wafer to rotate.
Optionally, the stacked bonded wafer includes at least two layers of wafers.
Optionally, the stacked bonded wafer includes three layers of wafers, where the three layers of wafers include a first wafer, a second wafer and a third wafer, the second wafer is located on the first wafer and bonded to the first wafer, and the third wafer is located on the second wafer and bonded to the second wafer.
Optionally, the stacked bonded wafer processing machine further comprises a grinding unit, wherein the grinding unit is used for thinning the stacked bonded wafer with the colloid injected into the edge, and the reducing unit is used for simultaneously cutting and removing the edge of the partial width of the thinned stacked bonded wafer and the colloid injected into the edge.
Optionally, after the glue injection unit bonds the first wafer and the second wafer to form a first stacked bonded wafer, a first glue is injected into the edge of the first bonded wafer, and the grinding unit thins the second wafer on the first bonded wafer with the edge injected with the first glue; after the glue injection unit bonds a third wafer on the thinned second wafer to form a second stacked bonded wafer, injecting a second glue body into the third wafer in the second stacked bonded wafer and the edge of the thinned second wafer; the grinding unit thins a third wafer on the second bonded wafer with the edge injected with the second colloid; and the reducing unit simultaneously cuts and removes the edge of the thinned second stacked bonded wafer with partial width and the first colloid and the second colloid injected into the edge.
Optionally, the stack bonding wafer processing machine further includes: and the conveying unit is used for conveying the stacked bonded wafers among the units.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the invention provides a stacking and bonding wafer processing machine, comprising: the glue injection unit is used for injecting glue to the edge of the stacked bonded wafer, and the reducing unit is used for simultaneously cutting and removing the edge of the stacked bonded wafer with partial width and the glue injected to the edge, so that when the reducing is performed, the edge of the stacked bonded wafer is filled with the glue, the edge of the stacked bonded wafer is not suspended or has a gap, the glue can stabilize the cutting process, the defects such as cracks and the like generated at the edge of the stacked bonded wafer in the cutting process are effectively reduced or prevented, and the defects such as cracks and the like can be prevented from being diffused to the center of the stacked bonded wafer. And when the injected colloid is also used for preventing cracks from being generated when thinning the wafer at the top in the stacked bonded wafer, the injected colloid is removed without an additional process after thinning, the edges of the stacked bonded wafer with partial width and the colloid injected at the edges can be simultaneously cut and removed through the cutting unit, the processing efficiency is improved, and the problems of colloid residue and cross contamination caused by the colloid can be prevented. Particularly, when the stacked bonded wafer processing machine station processes the multilayer stacked bonded wafer, after glue injection and grinding are carried out on two bonded wafers each time, glue removal and cutting (cutting) steps are not needed, after the multilayer stacked bonded wafer is formed, the edges of the partial width of the stacked bonded wafer and glue injected into the edges can be cut and removed simultaneously by carrying out a further cutting process through the cutting unit, so that excessive wafer edge cutting caused by multiple times of cutting in the manufacturing process of the multilayer stacked wafer can be avoided, and further excessive yield loss is avoided.
Further, after the glue injection unit bonds the first wafer and the second wafer to form a first stacked bonded wafer, injecting a first glue into the edge of the first bonded wafer, and thinning the second wafer on the first bonded wafer with the edge injected with the first glue by the grinding unit; after the glue injection unit bonds a third wafer on the thinned second wafer to form a second stacked bonded wafer, injecting a second glue body into the third wafer in the second stacked bonded wafer and the edge of the thinned second wafer; the grinding unit thins a third wafer on the second bonded wafer with the edge injected with the second colloid; and the reducing unit simultaneously cuts and removes the edge of the thinned second stacked bonded wafer with partial width and the first colloid and the second colloid injected into the edge. The stack bonding wafer processing machine station of the invention does not need to carry out the steps of removing glue and cutting (cutting) for a plurality of times in the process of processing the three-layer stack bonding wafer, after the three layers of stacked bonded wafers are formed, the edges of the stacked bonded wafers with partial width and the first colloid and the second colloid injected into the edges can be simultaneously cut and removed by performing a one-step reduction process through the reduction unit, thereby avoiding excessive wafer edge trimming caused by multiple trimming in the manufacturing process of the multi-layer stacked wafer, thereby avoiding excessive yield loss, and simultaneously ensuring that the existence of the first colloid and the second colloid ensures that in the process of cutting the edge of the three-layer stacked bonded wafer, the cutting process is kept stable, the defects such as cracks and the like generated at the edge of the three-layer stacking bonded wafer in the cutting process are effectively reduced or prevented, and the defects such as cracks and the like can be prevented from being diffused to the center of the three-layer stacking bonded wafer.
Drawings
FIG. 1 is a schematic diagram of a stacked bonded wafer processing tool according to an embodiment of the invention;
FIG. 2 is a flow chart illustrating a stacked bonded wafer processing method according to an embodiment of the present invention;
fig. 3-10 are schematic diagrams of stacked bonded wafer processing according to an embodiment of the present invention.
Detailed Description
As mentioned in the background, the edge-trimmed portion is considerable when stacking multiple layers of wafers, which results in the loss of yield.
Research shows that when stacking multiple layers of wafers, thinning operation is performed on the corresponding wafer after each wafer stacking, and after the thinning operation, an edge trimming process is correspondingly required, so that when stacking multiple layers of wafers, multiple times of thinning operation and multiple times of trimming process are required, and therefore, when stacking multiple layers of wafers, the edge trimming portion is considerable, and yield loss is caused. In addition, since defects such as cracks may be diffused toward the center of the wafer each time thinning is performed, the width to be thinned at the next edge thinning is wider, the amount of edge thinning of the stacked wafer is further increased, and yield loss is further caused. And the process is reduced for many times, so that the manufacturing efficiency is reduced.
To this end, the present invention provides a stack bonded wafer processing tool and a processing method, the processing tool comprising: the glue injection unit is used for injecting glue to the edge of the stacked bonded wafer, and the reducing unit is used for simultaneously cutting and removing the edge of the stacked bonded wafer with partial width and the glue injected to the edge, so that when the reducing is performed, the edge of the stacked bonded wafer is filled with the glue, the edge of the stacked bonded wafer is not suspended or has a gap, the glue can stabilize the cutting process, the defects such as cracks and the like generated at the edge of the stacked bonded wafer in the cutting process are effectively reduced or prevented, and the defects such as cracks and the like can be prevented from being diffused to the center of the stacked bonded wafer. And when the injected colloid is also used for preventing cracks from being generated when thinning the wafer at the top in the stacked bonded wafer, the injected colloid is removed without an additional process after thinning, the edges of the stacked bonded wafer with partial width and the colloid injected at the edges can be simultaneously cut and removed through the cutting unit, the processing efficiency is improved, and the problems of colloid residue and cross contamination caused by the colloid can be prevented. Particularly, when the stacked bonded wafer processing machine station processes the multilayer stacked bonded wafer, after glue injection and grinding are carried out on two bonded wafers each time, glue removal and cutting (cutting) steps are not needed, after the multilayer stacked bonded wafer is formed, the edges of the partial width of the stacked bonded wafer and glue injected into the edges can be cut and removed simultaneously by carrying out a further cutting process through the cutting unit, so that excessive wafer edge cutting caused by multiple times of cutting in the manufacturing process of the multilayer stacked wafer can be avoided, and further excessive yield loss is avoided.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In describing the embodiments of the present invention in detail, the drawings are not to be considered as being enlarged partially in accordance with the general scale, and the drawings are only examples, which should not be construed as limiting the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
Fig. 1 is a schematic structural diagram of a stacked bonded wafer processing tool according to an embodiment of the invention.
Referring to fig. 1, the stack bonding wafer processing tool includes:
the glue injection unit 101 is used for injecting glue to the edge of the stacked bonded wafer;
and the trimming unit 102 is used for simultaneously cutting and removing the edge of the partial width of the stacked bonded wafer and the edge-injected colloid.
Because the edges of the wafers are generally arc-shaped, when the two wafers are bonded to form the stacked bonded wafer, a gap exists at the edge of the stacked bonded wafer, and the position of the glue injection unit 101 where the glue is injected is the gap at the edge of the two bonded wafers. Specifically, referring to fig. 4, after the first wafer 301 and the second wafer 304 are bonded, a stacked bonded wafer is formed, the edge of the stacked bonded wafer has a gap (the boundary between the edges of the two wafers), and the glue injection unit 101 injects the glue 304 into the gap.
In an embodiment, the glue injection unit 101 includes a glue injection module and a hardening module, where the glue injection module is configured to inject fluid-like glue into an edge of the stacked bonded wafer, and the hardening module is configured to harden the injected glue to form a glue body.
The glue is a high-molecular organic material, the glue is fluid glue before hardening, the glue injection module can inject the fluid glue into the edge of the stacked bonded wafer through the spray head, and then the hardening module hardens the injected glue to form the glue.
With continued reference to fig. 1, the abatement unit 102 includes a blade module including a blade and a control module coupled to the blade that controls the rotation of the blade to cut away a partial width edge of the stacked bonded wafer and an edge-infused gel, and a lubricant supply module for supplying a lubricant to a cutting location during cutting. The control module at least comprises a power source, the power source is connected with the blade and used for providing power for the rotation and/or movement of the blade, and the power source comprises a motor.
The lubricant provided by the lubricant providing module is used for lubricating during cutting so as to facilitate the cutting.
The control module may also control the blade to move (in a direction towards the center of the stacked bonded wafers, the latter away from the center) to provide better cutting of the stacked wafers.
The abatement unit 102 further comprises: and the wafer carrying platform is used for fixing the stacked bonded wafer and driving the stacked bonded wafer to rotate. Specifically referring to fig. 9, after the glue 305 is injected to the edge of the stacked bonded wafer, the stacked bonded wafer is placed on the wafer stage of the abatement unit 102, the wafer stage fixes the stacked bonded wafer and drives the stacked bonded wafer to rotate, and the blade 340 in the abatement unit 102 crystallizes and rotates the edge of the stacked bonded wafer under the control of the control module 341 to cut the edge of the stacked bonded wafer and the filled glues 304 and 305.
The stacked bonded wafers that are edge diced in the abatement unit 102 comprise at least two layers of wafers.
In an embodiment, the stacked bonded wafer includes three layers of wafers, the filled glue includes a first glue and a second glue, and referring to fig. 7, the three layers of wafers include a first wafer 301, a second wafer 302 and a third wafer 303, the second wafer 302 is located on the first wafer 301 and bonded to the first wafer 301, a gap between edges of the first wafer 301 and the second wafer 302 is filled with a first glue 304, the third wafer 303 is located on the second wafer 302 and bonded to the second wafer 302, and a gap between the third wafer 303 and the second wafer 302 is filled with a second glue 304.
Continuing to refer to fig. 1, the stacked bonded wafer processing machine further includes a grinding unit 103, the grinding unit 103 is used for thinning the stacked bonded wafer with the glue injected into the edge, and correspondingly the reduction unit 102 is used for simultaneously cutting and removing the edge of the thinned stacked bonded wafer with the partial width and the glue injected into the edge, so that the thinning process, the glue injection process and the edge and glue injection cutting process can be performed in the same machine, and the processing efficiency of the stacked bonded wafer processing machine to the stacked bonded wafer is improved.
The stack bonded wafer processing tool further comprises: a transfer unit 104 for transfer of the stack bonded wafers between the units. Specifically, the transfer unit 104 is used for transferring the stacked bonded wafers among the glue injection unit 101, the polishing unit 103 and the trimming unit 102.
The stack bonded wafer processing tool further comprises: the wafer storage platform A is used for storing stacked bonded wafers to be processed, and the wafer storage platform B is used for storing the processed stacked bonded wafers. The conveying unit 104 is further configured to remove the stacked bonded wafer to be processed from the wafer storage stage a, convey the stacked bonded wafer to the glue injection unit 101 for glue injection, convey the glued stacked bonded wafer to the grinding unit 103 for grinding, convey the ground stacked bonded wafer to the trimming unit 102 for cutting and removing the edge of the stacked bonded wafer with a partial width and the glue injected into the edge, and convey the trimmed stacked bonded wafer to the wafer storage stage B.
When the machine of the present application is used to process a multi-layer stack bonded wafer, taking the multi-layer stack bonded wafer having a triple-layer wafer as an example, with reference to fig. 1 and fig. 3 to fig. 10, after a first wafer 301 (refer to fig. 4) and a second wafer 302 are bonded to form a first stack bonded wafer, the glue injection unit 101 injects a first glue 304 into an edge of the first bonded wafer, and the grinding unit 103 thins a second wafer 302 (refer to fig. 5) on the first bonded wafer whose edge is injected with the first glue 304; after the glue injection unit 101 bonds a third wafer 303 (refer to fig. 6) on the thinned second wafer 302 to form a second stacked bonded wafer, a second glue 305 (refer to fig. 7) is injected into the edges of the third wafer 303 and the thinned second wafer 302 in the second stacked bonded wafer; the polishing unit 103 thins the third wafer 303 on the second bonded wafer with the edge injected with the second glue 305 (refer to fig. 8); the trimming unit 102 cuts and removes the edge of the partial width of the thinned second stacked bonded wafer and the first glue 304 and the second glue 305 injected at the edge (refer to fig. 9 and 10) at the same time.
When the stacked bonded wafer processing machine station processes the stacked bonded wafer, the glue injection unit injects glue into the edge of the stacked bonded wafer, the reducing unit can simultaneously cut and remove the edge of the partial width of the stacked bonded wafer and the glue injected into the edge, therefore, when the reduction is carried out, the edge of the stacked bonded wafer is filled with the glue, so that the edge of the stacked bonded wafer is not suspended or has a gap, the glue can stabilize the cutting process, thereby effectively reducing or preventing the defects of cracks and the like generated at the edge of the stacked bonded wafer in the cutting process, preventing the defects of cracks and the like from diffusing to the center of the stacked bonded wafer, when the injected glue is also used for preventing the cracks from generating when the top wafer in the stacked bonded wafer is thinned, no extra process is needed to remove the injected glue after the thinning, and the edge of the partial width of the stacked bonded wafer can be simultaneously cut and removed by the reducing unit The colloid is injected along the edge, so that the treatment efficiency is improved, and the problems of colloid residue and cross contamination caused by the colloid can be prevented. Particularly, when the stacked bonded wafer processing machine station processes the multilayer stacked bonded wafer, after glue injection and grinding are carried out on two bonded wafers each time, glue removal and cutting (cutting) steps are not needed, after the multilayer stacked bonded wafer is formed, the edges of the partial width of the stacked bonded wafer and glue injected into the edges can be cut and removed simultaneously by carrying out a further cutting process through the cutting unit, so that excessive wafer edge cutting caused by multiple times of cutting in the manufacturing process of the multilayer stacked wafer can be avoided, and further excessive yield loss is avoided.
The present invention also provides a method for processing a stacked bonded wafer, referring to fig. 2, including:
step S201, injecting colloid to the edge of the stacked bonded wafer;
step S202, the edge of the stacked bonded wafer with a partial width and the colloid injected into the edge are cut and removed at the same time.
The foregoing process is described in detail below with reference to the accompanying drawings.
The number of wafers in the stacked bonded wafer is at least two, and the stacked bonded wafer with three layers is taken as an example for illustration.
Referring to fig. 3, a first wafer 301 and a second wafer 302 are provided, and the first wafer 301 and the second wafer 302 are bonded together.
The material of the first wafer 301 and the second wafer 302 may be silicon (Si), germanium (Ge), or silicon germanium (GeSi), silicon carbide (SiC); or silicon-on-insulator (SOI), germanium-on-insulator (GOI); or may be other materials such as group iii-v compounds such as gallium arsenide.
Integrated circuits are formed on the first wafer 301 and the second wafer 302 through a semiconductor integration manufacturing process. The functions of the integrated circuits formed on the first wafer 301 and the second wafer 302 may be different or the same.
The process of bonding the first wafer 301 and the second wafer 302 may be a direct bonding process, a eutectic bonding process, a metal diffusion bonding process, or other suitable bonding process.
Due to the curvature of the programming of the first wafer 301 and the second wafer 302, a gap may exist at the edge of the first stacked bonded wafer after the first wafer 301 and the second wafer 302 are bonded together to form the first stacked bonded wafer.
Referring to fig. 2, an edge of the stacked bonded wafers is implanted with a glue, specifically, a first glue 304 is implanted at the edge of the first bonded wafer.
On one hand, when the second wafer 302 is thinned subsequently, the first colloid 304 prevents the edge of the first bonded wafer from being suspended, so that the defects such as cracks and the like generated during thinning are prevented.
In an embodiment, the process of injecting the glue into the edge of the stacked bonded wafer (the first stacked bonded wafer) includes: injecting glue in a fluid state into the edge of the stacked bonded wafer (a first stacked bonded wafer); the injected glue is hardened to form a glue body (first glue body 304).
The hardening treatment is thermal radiation heating.
Referring to fig. 5, the second wafer 302 on the first bonded wafer with the edge implanted with the first glue 304 is thinned.
The thinning process is a chemical mechanical grinding process.
Referring to fig. 6, a third wafer 303 is bonded on the thinned second wafer 302 to form a second stacked bonded wafer.
The third wafer 303 may be silicon (Si), germanium (Ge), or silicon germanium (GeSi), silicon carbide (SiC); or silicon-on-insulator (SOI), germanium-on-insulator (GOI); or may be other materials such as group iii-v compounds such as gallium arsenide.
Integrated circuits are formed on the third wafer 303 through a semiconductor integration manufacturing process. The functionality of the integrated circuits formed on the third wafer 303 may be different from or the same as the functionality of the integrated circuits formed on the first wafer 301 and the second wafer 302.
Referring to fig. 7, a second glue 305 is injected into the edges of the third wafer 303 and the thinned second wafer 302 of the two stacked bonded wafers.
The formation process of the second colloid 305 is similar to that of the first colloid 304, and is not described herein again.
Referring to fig. 8, a third wafer 303 on the second bonded wafer with the edge implanted with the second glue 305 is thinned.
Referring to fig. 9 and 10, the edge of the thinned second stacked bonded wafer with a partial width and the first glue 304 and the second glue 305 injected at the edge are cut and removed at the same time (refer to fig. 9).
And the edge of the partial width of the stacked bonded wafer is removed by cutting through the rotation of the blade, and the colloid injected from the edge is removed, so that the lubricant is supplied to the cutting position during cutting. The stacked bonded wafer is rotated while dicing is performed.
The method for processing the stacked bonded wafer injects colloid to the edge of the stacked bonded wafer; and simultaneously cutting and removing the edge of the stacking bonded wafer with partial width and the colloid injected into the edge, wherein the colloid is filled at the edge of the stacking bonded wafer, so that the edge of the stacking bonded wafer is not suspended or has a gap, and the colloid can stabilize the cutting process, thereby effectively reducing or preventing the defects such as cracks and the like generated at the edge of the stacking bonded wafer in the cutting process, and preventing the defects such as cracks and the like from diffusing to the center of the stacking bonded wafer. And when the injected colloid is also used for preventing cracks from being generated when thinning the wafer at the top in the stacked bonded wafer, the injected colloid is removed without an additional process after thinning, the edge of the stacked bonded wafer with partial width and the colloid injected at the edge can be simultaneously cut and removed through a one-step reduction process, the processing efficiency is improved, and the problems of colloid residue and cross contamination caused by the colloid can be prevented. Particularly, when the multilayer stack bonded wafer is processed, after glue injection and grinding are carried out on two bonded wafers each time, glue injection removing and cutting (cutting) steps are not needed, after the multilayer stack bonded wafer is formed, the edge of the partial width of the stack bonded wafer and the glue injected into the edge can be cut and removed simultaneously through a cutting process, and therefore excessive wafer edge cutting caused by multiple times of cutting in the manufacturing process of the multilayer stack bonded wafer can be avoided, and further excessive yield loss is avoided.
It should be noted that, in this embodiment, definitions or descriptions of the same or similar parts as those in the foregoing embodiment are omitted, and specific reference is made to the definitions or descriptions of corresponding parts in the foregoing embodiment (stack bonded wafer processing apparatus).
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A stack bonded wafer processing tool, comprising:
the glue injection unit is used for injecting glue to the edge of the stacked bonded wafer;
and the cutting unit is used for simultaneously cutting and removing the edge of the partial width of the stacked bonded wafer and the colloid injected into the edge.
2. The machine of claim 1, wherein the glue injection unit comprises a glue injection module and a hardening module, the glue injection module is configured to inject fluid glue into an edge of the stacked bonded wafer, and the hardening module is configured to harden the injected glue to form a glue body.
3. The stack bonded wafer processing tool of claim 2, wherein the curing module is an infrared heating module that heats the injected glue by thermal radiation to cure the injected glue.
4. The stacked bonded wafer processing tool of claim 1, wherein the abatement unit comprises a blade module and a lubricant supply module, the blade module comprising a blade and a control module coupled to the blade, the control module controlling the rotation of the blade to cut away a partial width edge of the stacked bonded wafer and an edge-infused gel, the lubricant supply module for supplying a lubricant to a cutting location during the cutting.
5. The stack bonded wafer processing tool of claim 1 wherein the abatement unit further comprises: and the wafer carrying platform is used for fixing the stacked bonded wafer and driving the stacked bonded wafer to rotate.
6. The stack bonded wafer processing tool of claim 1, wherein the stack bonded wafers comprise at least two layers of wafers.
7. The stack bonded wafer processing tool of claim 6, wherein the stack bonded wafers comprise three wafers including a first wafer, a second wafer and a third wafer, the second wafer being bonded to the first wafer on the first wafer, the third wafer being bonded to the second wafer on the second wafer.
8. The apparatus of claim 6, further comprising a polishing unit configured to thin the stacked bonded wafer with the edge injected with the glue, wherein the trimming unit is configured to cut and remove the edge of the thinned stacked bonded wafer with a partial width and the glue injected into the edge at the same time.
9. The apparatus of claim 8, wherein the glue injection unit injects a first glue on an edge of the first bonded wafer after the first and second wafers are bonded to form the first stacked bonded wafer, and the polishing unit thins the second wafer on the first bonded wafer with the first glue injected on the edge; after the glue injection unit bonds a third wafer on the thinned second wafer to form a second stacked bonded wafer, injecting a second glue body into the third wafer in the second stacked bonded wafer and the edge of the thinned second wafer; the grinding unit thins a third wafer on the second bonded wafer with the edge injected with the second colloid; and the reducing unit simultaneously cuts and removes the edge of the thinned second stacked bonded wafer with partial width and the first colloid and the second colloid injected into the edge.
10. The stack bonded wafer processing tool of claim 1 or 8, further comprising: and the conveying unit is used for conveying the stacked bonded wafers among the units.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910940808.0A CN110854039A (en) | 2019-09-30 | 2019-09-30 | Stack bonding wafer processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910940808.0A CN110854039A (en) | 2019-09-30 | 2019-09-30 | Stack bonding wafer processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110854039A true CN110854039A (en) | 2020-02-28 |
Family
ID=69596244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910940808.0A Pending CN110854039A (en) | 2019-09-30 | 2019-09-30 | Stack bonding wafer processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110854039A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185807A (en) * | 2020-09-30 | 2021-01-05 | 武汉新芯集成电路制造有限公司 | Method for forming polycrystalline circle stacking structure |
| WO2023032552A1 (en) * | 2021-09-01 | 2023-03-09 | 株式会社荏原製作所 | Substrate processing method |
| WO2023042547A1 (en) * | 2021-09-14 | 2023-03-23 | 株式会社荏原製作所 | Substrate processing device and substrate processing method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4610079A (en) * | 1980-01-22 | 1986-09-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of dicing a semiconductor wafer |
| CN101327572A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Technique for thinning back side of silicon wafer |
| JP2012222310A (en) * | 2011-04-14 | 2012-11-12 | Disco Abrasive Syst Ltd | Method for processing wafer |
| CN103413772A (en) * | 2013-06-25 | 2013-11-27 | 上海华力微电子有限公司 | Wafer thinning method |
| CN104108139A (en) * | 2013-04-18 | 2014-10-22 | 中芯国际集成电路制造(上海)有限公司 | Method for cutting MEMS (micro-electromechanical system) wafers |
| CN104282590A (en) * | 2013-07-04 | 2015-01-14 | 南亚科技股份有限公司 | Semiconductor die, method for preparing same, and method for detecting crack in semiconductor die |
| CN104377223A (en) * | 2013-08-13 | 2015-02-25 | 三星显示有限公司 | Flexible display |
| CN105161410A (en) * | 2015-07-21 | 2015-12-16 | 武汉新芯集成电路制造有限公司 | Trimming method for trimming seam defect of bonded wafer |
| JP2017188599A (en) * | 2016-04-07 | 2017-10-12 | 株式会社ディスコ | Processing method |
| CN207282463U (en) * | 2017-08-23 | 2018-04-27 | 武汉新芯集成电路制造有限公司 | A kind of cleaning pipe structure and wafer deburring board |
-
2019
- 2019-09-30 CN CN201910940808.0A patent/CN110854039A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4610079A (en) * | 1980-01-22 | 1986-09-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of dicing a semiconductor wafer |
| CN101327572A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Technique for thinning back side of silicon wafer |
| JP2012222310A (en) * | 2011-04-14 | 2012-11-12 | Disco Abrasive Syst Ltd | Method for processing wafer |
| CN104108139A (en) * | 2013-04-18 | 2014-10-22 | 中芯国际集成电路制造(上海)有限公司 | Method for cutting MEMS (micro-electromechanical system) wafers |
| CN103413772A (en) * | 2013-06-25 | 2013-11-27 | 上海华力微电子有限公司 | Wafer thinning method |
| CN104282590A (en) * | 2013-07-04 | 2015-01-14 | 南亚科技股份有限公司 | Semiconductor die, method for preparing same, and method for detecting crack in semiconductor die |
| CN104377223A (en) * | 2013-08-13 | 2015-02-25 | 三星显示有限公司 | Flexible display |
| CN105161410A (en) * | 2015-07-21 | 2015-12-16 | 武汉新芯集成电路制造有限公司 | Trimming method for trimming seam defect of bonded wafer |
| JP2017188599A (en) * | 2016-04-07 | 2017-10-12 | 株式会社ディスコ | Processing method |
| CN207282463U (en) * | 2017-08-23 | 2018-04-27 | 武汉新芯集成电路制造有限公司 | A kind of cleaning pipe structure and wafer deburring board |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185807A (en) * | 2020-09-30 | 2021-01-05 | 武汉新芯集成电路制造有限公司 | Method for forming polycrystalline circle stacking structure |
| CN112185807B (en) * | 2020-09-30 | 2023-12-22 | 武汉新芯集成电路制造有限公司 | Method for forming multi-wafer stacking structure |
| WO2023032552A1 (en) * | 2021-09-01 | 2023-03-09 | 株式会社荏原製作所 | Substrate processing method |
| WO2023042547A1 (en) * | 2021-09-14 | 2023-03-23 | 株式会社荏原製作所 | Substrate processing device and substrate processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110854039A (en) | Stack bonding wafer processing apparatus | |
| CN110854011A (en) | Method for processing stacked bonded wafers | |
| CN105990208B (en) | Method for manufacturing laminated device | |
| CN102934217A (en) | Automated thermal slide debonder | |
| TW201717267A (en) | Wafer processing method | |
| CN107275234B (en) | Method for manufacturing package wafer and method for manufacturing device chip | |
| JP2011029450A (en) | Method of processing wafer | |
| JP6209047B2 (en) | Method for dividing circular plate | |
| JP6991656B2 (en) | How to make chips | |
| JP2005045149A (en) | Method for expansion | |
| JP6925721B2 (en) | Chip manufacturing method | |
| KR102578958B1 (en) | Method of manufacturing chip | |
| JP6855127B2 (en) | Chip manufacturing method | |
| JP6925717B2 (en) | Chip manufacturing method | |
| JP6925720B2 (en) | Chip manufacturing method | |
| JP6851690B2 (en) | Chip manufacturing method | |
| JP6851691B2 (en) | Chip manufacturing method | |
| JP2007005366A (en) | Method of manufacturing semiconductor device | |
| KR20150104041A (en) | Processing method | |
| JP7139037B2 (en) | Chip manufacturing method | |
| JP6925722B2 (en) | Chip manufacturing method | |
| JP2019059628A (en) | Method of manufacturing chip | |
| JP6925719B2 (en) | Chip manufacturing method | |
| JP6830739B2 (en) | How to make chips | |
| JP6851692B2 (en) | Chip manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200228 |