CN110853923A - RF MEMS digital variable capacitor array structure - Google Patents
RF MEMS digital variable capacitor array structure Download PDFInfo
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- CN110853923A CN110853923A CN201911298691.7A CN201911298691A CN110853923A CN 110853923 A CN110853923 A CN 110853923A CN 201911298691 A CN201911298691 A CN 201911298691A CN 110853923 A CN110853923 A CN 110853923A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 23
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 101150030164 PADI3 gene Proteins 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241000854350 Enicospilus group Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/38—Multiple capacitors, e.g. ganged
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Abstract
The invention relates to an RF MEMS digital variable capacitor array structure which comprises a substrate, wherein a plurality of groups of RF MEMS digital variable capacitor units based on a see-saw structure are distributed on the substrate, the RF MEMS digital variable capacitor units are distributed around an RF Pad after being grouped, an RF electrode of each group of RF MEMS digital variable capacitor units is connected with the RF Pad, the maximum capacitance values of each group of RF MEMS digital variable capacitor units are different, each group of RF MEMS digital variable capacitor units has two capacitance states and is controlled by a 5-bit binary digital driving signal, and GND pads are distributed on two sides of the RF Pad. Therefore, the variable capacitor units are few in number, the capacitance value of the variable capacitor is large in step, the adjusting range is wide, and the adjustability is strong. With 5 sets of cells, two capacitor states per set, there are 32 steps. With 5 sets of cells, three capacitive states per set, there are 243 steps. Controlled by digital signals, is compatible with the IC.
Description
Technical Field
The present invention relates to a capacitive array, and more particularly to an RF MEMS digital variable capacitive array structure.
Background
The greatest feature of the evolution from 1G to 5G is the increasing frequency and the increasing bandwidth. Nowadays, the miniaturization of equipment is pursued, and the traditional radio frequency front-end device is more and more difficult to satisfy the demand of broadband, therefore, the demand of radio frequency front-end to the adjustable frequency device is more and more strong, and variable capacitance is just the "governing valve" of the adjustable frequency device and plays a very important role. RF MEMS variable capacitors are receiving increasing attention due to their high Q value, high capacitance ratio, high linearity, high power capacity, low power consumption, low temperature sensitivity, etc.
In view of the above-mentioned defects and requirements, the applicant has made active research and innovation to create a digital variable capacitor array structure of RF MEMS that has high reliability, high controllability, wide tuning range and is compatible with IC, so that it has industrial value.
Disclosure of Invention
To solve the above technical problems, it is an object of the present invention to provide an RF MEMS digital variable capacitor array structure.
The invention relates to an RF MEMS digital variable capacitor array structure, which comprises a substrate, wherein: the substrate is distributed with a plurality of groups of RF MEMS digital variable capacitance units based on a warping plate type structure, the RF MEMS digital variable capacitance units are distributed around the RF Pad after being grouped, an RF electrode of each group of RF MEMS digital variable capacitance units is connected with the RF Pad, the maximum capacitance value of each group of RF MEMS digital variable capacitance units is different, each group of RF MEMS digital variable capacitance units has two capacitance states and is controlled by a 5-bit binary digital driving signal, and GND pads are distributed on two sides of the RF Pad.
Further, an RF MEMS digital variable capacitor array configuration as described above, wherein said substrate is a high resistance silicon substrate; or a glass substrate; or a ceramic substrate; or a gallium arsenide substrate.
Furthermore, the RF MEMS digital variable capacitor array structure is characterized in that the RF MEMS digital variable capacitor units are grouped into at least five groups, i.e. group one, group two, group three, group four and group five, and each group of variable capacitor units is composed of at least 1 RF MEMS digital variable capacitor unit.
Furthermore, the RF MEMS digital variable capacitor array structure is characterized in that the RF MEMS digital variable capacitor unit is formed by a basic cascade expansion of a see-saw structure unit, and a see-saw upper plate and an RF electrode form a first distance, a second distance and a third distance corresponding to three capacitor states; alternatively, the first and third distances are formed from the RF electrode, corresponding to two capacitive states.
Further, an RF MEMS digital variable capacitor array structure as described above, wherein the maximum capacitance value of each set of variable capacitor units should be increased in a double relation or a quadruple relation depending on whether the number of states of each set of variable capacitor units is two or three.
Further, an RF MEMS digital variable capacitor array structure as described above, wherein the RF MEMS digital variable capacitor array can be controlled by, but not limited to, 5-bit binary digital voltage signals, and the specific control bit is determined by the number of states of each group of RF MEMS digital variable capacitor units and the number of groups of RF MEMS digital variable capacitor units (2)Number of bitsNumber of states per groupNumber of groupsThe digit is an integer).
Still further, an RF MEMS digital variable capacitive array configuration as described above, wherein said individual RF MEMS digital variable capacitive units are grouped and distributed in a cross around the RF Pad.
By the scheme, the invention at least has the following advantages:
1. the variable capacitance units are small in number, and the capacitance value of the variable capacitance units is large in steps. With 5 sets of cells, two capacitor states per set, there are 32 steps. With 5 sets of cells, three capacitive states per set, there are 243 steps.
2. The seesaw type variable capacitor unit has a simple structure, the capacitance values of the variable capacitor in each step are distributed uniformly, the adjustable range is wide, and therefore the controllability of the capacitor is strong and the reliability is high.
3. Controlled by digital signals, is compatible with the IC.
4. The variable capacitance units are distributed in a cross-shape or a ring around the RF Pad to minimize the RF electrode length and thus reduce parasitic inductance.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of an RF MEMS digital variable capacitance array configuration.
Fig. 2 is a schematic structural diagram (of the simplest configuration) of an RF MEMS digital variable capacitance unit.
Fig. 3 is a schematic structural diagram of a cascaded development of the RF MEMS digital variable capacitance unit.
Fig. 4 is an operational schematic of the RF MEMS digital variable capacitance unit at a first distance.
Fig. 5 is an operational schematic of the RF MEMS digital variable capacitance unit at a third distance.
The meanings of the reference symbols in the drawings are as follows.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
An RF MEMS digital variable capacitance array configuration as in fig. 1-5, comprising a substrate 12, distinguished by: five groups of RF MEMS digital variable capacitance units based on a wane type structure are distributed on the substrate 12, wherein the five groups are a group I5, a group II 6, a group III 7, a group IV 8 and a group V9. The maximum capacitance value of each group of RF MEMS digital variable capacitance units is different. Specifically, each set of RF MEMS digital variable capacitance cells has two capacitance states, controllable by a 5-bit binary digital drive signal. 5 groups of RF MEMS digital variable capacitance units are distributed around the RF Pad3, and 2 GND pads 4 are distributed on two sides of the RF Pad 3.
In view of a preferred embodiment of the present invention, the RF MEMS digital variable capacitor array structure comprises 5 RF MEMS digital variable capacitor units. Wherein, group one 5, group two 6, group three 7, group four 8 each comprise an RF MEMS digital variable capacitance unit. Group five 9 contains 2 RF MEMS digital variable capacitance units. In connection with actual manufacturing, the substrate 12 is a high-resistance silicon substrate; or a glass substrate; or a ceramic substrate; or a gallium arsenide substrate.
Further, as shown in fig. 2 and fig. 3, each of the RF MEMS digital variable capacitance units used in the present invention is of a see-saw structure, and is formed by cascading extension of the simplest basic see-saw structure unit 2. Meanwhile, as shown in fig. 4 and 5, the upper plate of the rocker thereof may form a first distance 10 and a third distance 11 with the RF electrode, i.e., corresponding to two capacitive states.
In view of practical implementation, in order to realize that 5 groups of variable capacitance units are not repeated in capacitance value and ensure that the capacitance values of all the freely combined variable capacitance units are consistent in step order under the premise of free arrangement and combination, the maximum capacitance value of each group of variable capacitance units adopted by the invention is increased by two times. The array structure constructed by the invention can be controlled by 5-bit binary digital voltage signals, and each bit of binary digital signal can control one capacitance value. Of course, the control is not limited to the control of 5-bit binary digital voltage signal, and the specific control bit is determined by the number of states of each group of RF MEMS digital variable capacitive units and the number of groups of RF MEMS digital variable capacitive units (2)Number of bitsNumber of states per groupNumber of groupsThe digit is an integer).
In a further aspect, to ensure RF performance, the present invention employs 5 sets of RF MEMS digital variable capacitive units distributed in a cross shape around the RF Pad3, and the RF electrodes of each set of RF MEMS digital variable capacitive units are connected to the central RF Pad 3. Of course, a ring or other configuration may be used. The RF electrode as a whole can be guaranteed to be shortest and thus the parasitic inductance minimized. In addition, this layout also facilitates the two-sided distribution of GND Pad 4.
The working principle of the RF MEMS digital variable capacitance unit is as follows:
the digital signal of five bits, the first bit corresponds to group one, the second bit corresponds to group two, the third bit corresponds to group three, the fourth bit corresponds to group four, the fifth bit corresponds to group five. Wherein 1 represents the application of a positive voltage to the "C +" driving electrode of the corresponding variable capacitance unit; 0 represents a positive voltage applied to the "C-" driving electrode of the corresponding variable capacitance unit. Thus, the digital selection of the capacitance is achieved by selectively applying voltages to the corresponding sets of drive electrodes with different digital signals as shown in table 1.
Table 1 (digital signal to capacitor state control description)
The invention has the following advantages by the aid of the character expression and the accompanying drawings:
1. the variable capacitance units are small in number, and the capacitance value of the variable capacitance units is large in steps. With 5 sets of cells, two capacitor states per set, there are 32 steps. With 5 sets of cells, three capacitive states per set, there are 243 steps.
2. The seesaw type variable capacitor unit has a simple structure, the capacitance values of the variable capacitor in each step are distributed uniformly, the adjustable range is wide, and therefore the controllability of the capacitor is strong and the reliability is high.
3. Controlled by digital signals, is compatible with the IC.
4. The variable capacitance units are distributed in a cross-shape or a ring around the RF Pad to minimize the RF electrode length and thus reduce parasitic inductance.
Furthermore, the indication of the orientation or the positional relationship described in the present invention is based on the orientation or the positional relationship shown in the drawings, and is only for convenience of describing the present invention and simplifying the description, but does not indicate or imply that the indicated device or configuration must have a specific orientation or be operated in a specific orientation configuration, and thus, should not be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "connected" and "disposed" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (7)
1. An RF MEMS digital variable capacitor array structure, comprising a substrate, characterized in that: the substrate is distributed with a plurality of groups of RF MEMS digital variable capacitance units based on a warping plate type structure, the RF MEMS digital variable capacitance units are distributed around the RF Pad after being grouped, an RF electrode of each group of RF MEMS digital variable capacitance units is connected with the RF Pad, the maximum capacitance value of each group of RF MEMS digital variable capacitance units is different, each group of RF MEMS digital variable capacitance units has two capacitance states and is controlled by a 5-bit binary digital driving signal, and GND pads are distributed on two sides of the RF Pad.
2. An RF MEMS digital variable capacitance array configuration as claimed in claim 1 wherein: the substrate is a high-resistance silicon substrate; or a glass substrate; or a ceramic substrate; or a gallium arsenide substrate.
3. An RF MEMS digital variable capacitance array configuration as claimed in claim 1 wherein: the RFMEMS digital variable capacitance units at least form five groups, namely a group I, a group II, a group III, a group IV and a group V, and each group of variable capacitance units at least comprises 1 RF MEMS digital variable capacitance unit.
4. An RF MEMS digital variable capacitance array configuration as claimed in claim 1 wherein: the RFMEMS digital variable capacitor unit is formed by cascading and expanding basic warping plate type structural units, wherein a warping plate type upper polar plate and an RF electrode form a first distance, a second distance and a third distance which correspond to three capacitor states; alternatively, the first and third distances are formed from the RF electrode, corresponding to two capacitive states.
5. An RF MEMS digital variable capacitance array configuration as claimed in claim 3 wherein: the maximum capacitance value of each group of variable capacitance units should be increased in a twofold relationship or a fourfold relationship depending on whether the number of states of each group of variable capacitance units is two or three.
6. An RF MEMS digital variable capacitance array configuration as claimed in claim 1 wherein: the RF MEMS digital variable capacitor array can be controlled by a 5-bit binary digital voltage signal, but not limited to, and the specific control bit is determined by the state number of each group of RF MEMS digital variable capacitor units and the group number of the RF MEMS digital variable capacitor units (2)Number of bitsNumber of states per groupNumber of groupsThe digit is an integer).
7. An RF MEMS digital variable capacitance array configuration as claimed in claim 1 wherein: the individual RF MEMS digital variable capacitance units are grouped and distributed in a cross shape around the RF Pad.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911298691.7A CN110853923A (en) | 2019-12-17 | 2019-12-17 | RF MEMS digital variable capacitor array structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911298691.7A CN110853923A (en) | 2019-12-17 | 2019-12-17 | RF MEMS digital variable capacitor array structure |
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| CN110853923A true CN110853923A (en) | 2020-02-28 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413681A (en) * | 2013-07-30 | 2013-11-27 | 清华大学 | MEMS linear variable capacitor of symmetrical lever structure |
| CN103843090A (en) * | 2011-09-02 | 2014-06-04 | 卡文迪什动力有限公司 | Rf mems isolation, series and shunt DVC, and small MEMS |
| CN211208253U (en) * | 2019-12-17 | 2020-08-07 | 苏州希美微纳系统有限公司 | High-precision RF MEMS digital variable capacitor |
-
2019
- 2019-12-17 CN CN201911298691.7A patent/CN110853923A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103843090A (en) * | 2011-09-02 | 2014-06-04 | 卡文迪什动力有限公司 | Rf mems isolation, series and shunt DVC, and small MEMS |
| CN103413681A (en) * | 2013-07-30 | 2013-11-27 | 清华大学 | MEMS linear variable capacitor of symmetrical lever structure |
| CN211208253U (en) * | 2019-12-17 | 2020-08-07 | 苏州希美微纳系统有限公司 | High-precision RF MEMS digital variable capacitor |
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