CN110850267A - Optical power monitoring unit and optical power monitoring device for ultra-high temperature aging test - Google Patents
Optical power monitoring unit and optical power monitoring device for ultra-high temperature aging test Download PDFInfo
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- CN110850267A CN110850267A CN201911280187.4A CN201911280187A CN110850267A CN 110850267 A CN110850267 A CN 110850267A CN 201911280187 A CN201911280187 A CN 201911280187A CN 110850267 A CN110850267 A CN 110850267A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 156
- 238000012544 monitoring process Methods 0.000 title claims abstract description 36
- 230000032683 aging Effects 0.000 title claims abstract description 29
- 238000012360 testing method Methods 0.000 title claims abstract description 29
- 238000012806 monitoring device Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000003780 insertion Methods 0.000 claims description 20
- 230000037431 insertion Effects 0.000 claims description 20
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 description 20
- 238000001514 detection method Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002431 foraging effect Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000010287 polarization Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
Abstract
The invention provides an optical power monitoring unit and an optical power monitoring device for ultra-high temperature aging test, wherein the optical power monitoring unit comprises a heating metal block, a semiconductor light-emitting chip, a collimator and a photoelectric sensor; the semiconductor light-emitting chip is placed above the heating metal block and can emit divergent light when being electrified, the collimator is arranged in a transmission path of the divergent light and changes the divergent light into collimated or near-collimated light beams, the photoelectric sensor receives the collimated light beams after a certain stroke and detects the optical power of the monitored semiconductor light-emitting chip. One or more mirrors may be provided in the transmission path of the collimated beam to alter the transmission path of the light. By adopting the collimator, the divergent light is changed into collimated or near-collimated light beams, so that the laser reaches the photodiode after a certain stroke, the heat radiation of the heating metal block to the photodiode is weakened, the photodiode supports ultra-high temperature aging monitoring, and the service life of the photodiode is effectively prolonged.
Description
Technical Field
The invention relates to the field of aging tests, in particular to an optical power monitoring unit and an optical power monitoring device for an ultrahigh-temperature aging test.
Background
All semiconductor elements need to be aged to a certain degree to screen out bad chips, so that invalid or variable components are screened out, and the time for the products leaving the factory to be tested is guaranteed. The aging test of laser or LED equipment usually needs to monitor the optical power, the wavelength performance is usually needed to be monitored in order to know the yield of chips, and the monitoring of the spectral performance has additional value for failure analysis. Most burn-in devices currently on the market provide voltage/current supply and measurement capabilities, some of which provide an optical power voltage/current test capability (LIV or sometimes referred to as PIV).
The temperature of high temperature aging is generally divided into three orders of magnitude depending on the form of the product: 85 degrees (device level), 125 degrees (chip operation level), and 175 degrees (chip memory level). However, the maximum operating temperature of a general photodiode is only about 80 ℃, and the photodiode cannot adapt to ultra-high temperature, namely, temperature above 85 ℃. And since the light divergence angle of a Laser Diode (LD) is typically a Numerical Aperture (NA) greater than 0.2, the monitor PD must be placed near a high temperature aging block to better capture the beam while also helping to reduce light scattering from neighboring LDs. However, radiation-induced local temperature increases sufficiently to affect the reliability of the monitored PD greatly reduce the lifetime of the monitored PD.
Disclosure of Invention
The technical problems solved by the invention are as follows: the optical power monitoring unit and the optical power monitoring device for the ultra-high temperature aging test are provided, and the problems that the photodiode does not support ultra-high temperature aging monitoring and is short in service life are solved.
The technical scheme provided by the invention for solving the technical problems is as follows:
an optical power monitoring unit for ultra-high temperature aging test comprises a heating metal block, a semiconductor light-emitting chip, a collimator and a photoelectric sensor; the semiconductor light-emitting chip is arranged above the heating metal block and can emit divergent light when electrified, the collimator is arranged in a transmission path of the divergent light and changes the divergent light into a collimated or near-collimated light beam, the photoelectric sensor receives the collimated light beam after a certain stroke, and the optical power of the monitored semiconductor light-emitting chip is detected.
According to the scheme, one or more reflecting mirrors can be arranged in the transmission path of the collimated light beam, and the collimated light beam reflected by the reflecting mirrors is transmitted to the photodiode.
According to the scheme, the collimator is a collimating lens, and the photoelectric sensor is a photodiode.
According to the scheme, a movable optical element inserting plate is arranged in the transmission path of the collimated light beam, at least one element hole is formed in the optical element inserting plate, and an optical attenuator, a linear transmissivity filter or a linear polarizer is arranged in the element hole. The optical element insertion plate may be further provided with a through hole through which the collimated light beam is incident on the photosensor. The through hole may be a through hole formed without placing an element hole of an element.
According to the scheme, the optical element inserting plate further comprises an optical element moving structure, wherein the optical element moving structure comprises a linear actuator, and the linear actuator drives the optical element inserting plate to move linearly. The alignment can be performed manually or automatically by the equipment:
the optical element moving structure further comprises a position sensor for performing closed-loop feedback to control the collimated beam to be directed at an optical attenuator, a linear transmittance filter or a linear polarizer on the optical element insertion plate according to the real-time position.
In order to facilitate industrial testing, the invention also provides an optical power monitoring device for the ultra-high temperature aging test, which comprises optical power monitoring units which are arranged in an array, wherein the optical power monitoring units are optical power monitoring units provided with at least one reflector or without reflectors.
According to the above scheme, the optical power monitoring device further comprises an optical element insertion plate and an optical element moving structure, wherein the optical element moving structure comprises a linear actuator and a position sensor, the optical element insertion plate is arranged in the transmission path of the collimated light beam, element hole groups corresponding to the optical power monitoring units are arranged on the optical element insertion plate in an array mode, each element hole group comprises at least one through hole and one element hole, an optical attenuator, a linear transmissivity filter or a linear polarizer is installed in each element hole, the linear actuator drives the optical element insertion plate to move relatively in a push or pull mode, the position sensor performs closed-loop feedback according to a real-time position, and the collimated light beam is controlled to align the through hole or the element hole in the optical element insertion plate according to requirements.
The invention has the beneficial effects that: the light power monitoring unit of the invention changes the diffused light into the collimated light beam by adopting the collimator, and can transmit a longer distance, thereby enlarging the distance from the semiconductor light-emitting chip to the photodiode, leading the laser to reach the photodiode after a certain stroke, being beneficial to weakening the heat radiation of the heating metal block to the photodiode, reducing the rising temperature of the photodiode, leading the photodiode to support the ultra-high temperature aging monitoring, and simultaneously effectively prolonging the service life of the photodiode. The optical power monitoring units are arranged in an array mode, a plurality of semiconductor light-emitting chips can be measured simultaneously, and time and efficiency are saved.
Further, by providing one or more mirrors, the transmission path of the light beam can be changed. The optical beam transmission path may be straight, or may be bent by 90 degrees, or even multi-path bent. Wherein, the straight transmission path can reduce the use number of the reflecting mirrors. Under the spatial constraint, a bending structure, for example, 90 degrees, is usually used to further reduce the heat radiation from the heater block to the photosensor, so as to minimize the temperature rise caused by the heat radiation and ensure the stability of the wavelength and power monitoring device of the semiconductor light-emitting chip in the ultra-high temperature aging test.
Different optical elements can be inserted into the optical path through the optical element insertion plate to measure different aging parameters: by controlling the collimated light beam to pass through the optical attenuator, the maximum detectable power can be enlarged, and meanwhile, the light power is prevented from exceeding the maximum measurement power of the photodiode to cause misdetection; the wavelength can be measured by controlling the collimated beam through a linear transmittance filter; polarization rotation aging characteristics can be measured by controlling a collimated beam through a linear polarizer. For ease of measurement, through holes may be provided in the optical element interposer board, thus eliminating the need to completely remove the interposer board to measure optical power that does not pass through the optical element. Meanwhile, an optical element moving structure can be introduced, and the collimated light beam is controlled to align the optical attenuator, the linear transmittance filter or the linear polarizer on the optical element inserting plate according to the measurement requirement.
Drawings
Fig. 1 is a schematic structural diagram of an optical power monitoring unit according to a first embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an optical power monitoring unit with a reflector and an optical element insertion plate according to a second embodiment of the present invention;
FIG. 3 is a diagram illustrating an optical element moving structure according to a third embodiment of the present invention;
FIG. 4 is a graph of transmittance versus wavelength for a linear transmittance filter of the present invention;
fig. 5 is a schematic diagram of an optical power monitoring apparatus according to a fourth embodiment of the present invention.
In the figure: 1-Photodiode (PD), 2-collimated beam, 3-semiconductor light emitting chip, 4-collimating lens, 5-heating metal block, 6-optical element insertion plate, 7-linear actuator, 8-position sensor, 9-element hole, 10-reflector.
Detailed Description
The invention is further illustrated with reference to the following specific embodiments and the accompanying drawings.
The embodiment of the invention discloses a specific structure of an optical power monitoring unit for ultra-high temperature aging test, which comprises a photodiode 1, a semiconductor light-emitting chip 3, a collimating lens 4 and a heater metal block 5, as shown in figure 1. The photodiode 1 is a semiconductor device composed of a PN junction, has a unidirectional conductivity, can convert an optical signal into an electrical signal, and can also use a photoelectric sensor, so that the optical power of the semiconductor light emitting chip 3 can be measured. And the heater metal block 5 adopts a heating device to heat the metal block according to different requirements so as to meet the temperature required by the aging of the semiconductor light-emitting chip. The semiconductor light emitting chip 3, such as a laser diode, is located near the heating metal block 5, and can emit light when energized, and the laser light also has a certain divergence angle, so the divergent light in this context includes laser light. The collimator lens 4 is an optical element made of a transparent substance (e.g., glass, crystal, etc.) and is disposed in a transmission path of the light emitted from the semiconductor light emitting chip 3 to change the divergent light into a collimated light beam, and other light collimating means may be used.
The divergent light is changed into a collimated light beam through different lenses or other optical elements, so that the distance from the semiconductor light-emitting chip to the photodiode can be enlarged, the light reaches the photodiode 1 after a certain stroke, and the heat radiation of the heating metal block 5 to the photodiode 1 is reduced; while allowing other optical elements such as attenuator filters, linear transmittance filters, etc. to be inserted into the test system for better screening of failed chips. For a laser diode, due to the limitation of acceptable optical power density in a unit area of the photodiode 1, requirements of a laser divergence angle on the type of a lens and other factors, a collimating lens with a micro-focusing function is required to convert an outgoing light beam of the laser into collimated light; meanwhile, other optical elements in the optical path, such as a linear filter, an attenuator and the like, can be prevented from being damaged. In addition, the transmitted light beam is mainly a collimated light beam or a collimated light beam with light focusing, so that the diameter difference of the light spots on the lens can be matched, and the numerical aperture of the laser diode and the focal length of the lens are matched with the light receiving area and the light receiving area of the photodiode in a practical sense.
The second embodiment of the invention discloses an optical power monitoring unit with a reflector. As shown in fig. 2, a mirror 10 is provided in the transmission path of the collimated light beam 2, thereby changing the transmission path of the light beam 2. One or more mirrors 10 may also be provided in the transmission path of the collimated light beam 2 as required. The beam propagation may be straight, bent 90 degrees, or multi-path bent. Under space constraints, a bent structure is typically used, as shown in fig. 2. The transmission of the light beam with the bent structure, for example, 90 degrees, can further reduce the heat radiation of the heater to the PD.
To better screen for failed chips, a variety of optical filters need to be used. As shown in fig. 2, a movable optical element insertion plate 6 may be provided in the transmission path of the collimated light beam, an element hole 9 may be provided in the optical element insertion plate 6, and an optical element such as an optical attenuator, a linear transmittance filter, or a linear polarizer may be provided in the element hole 9. A through hole may be provided in the optical element insertion plate so that the optical element insertion plate 6 does not need to be removed when the optical element is not required to be used. The through-hole may also be formed by an element hole 9 without an optical element.
The optical element provided on the optical element insertion plate functions as follows:
the optical power of the semiconductor light emitting chip can be directly detected through the through hole.
The optical power detection is increased to 1W or above using a typical 15-25dB attenuator by inserting an optical attenuation filter to measure high power above the maximum current conversion range of the photodiode. An optical attenuator is typically inserted to amplify the maximum detectable power while reducing false detections due to optical saturation
The wavelength can be measured by a linear transmittance filter. The optical power is measured by inserting a linear transmittance filter so that when the laser emits a single mode at a single wavelength, the relative power ratio of filtered and unfiltered can be used to determine the wavelength of the light. Linear transmittance filters may also be used for multiple modes having a pair of wavelengths. As shown in fig. 5, the Linear Transmittance Filter (LTF) has a transmittance that varies linearly with wavelength in a specific wavelength range, and the Linear Transmittance Filter (LTF) has a transmittance that varies linearly with wavelength in a specific wavelength range, which is applied to the identification of the wavelength. The transmission of the LTF must be monotonic to ensure that there is a one-to-one correspondence between the transmission of the filter and a given wavelength. Mathematically, the filter function can be described as a linear or second order polynomial equation. In practical applications, the transfer function in the graph can be generally segmented and truncated into several linear function ranges and linear interpolation by using computer-aided function calibration.
On the basis of a linear function, the wavelength of light corresponds to the transmittance one by one, and the wavelength detection is realized through the ratio of optical power readings, which is in accordance with the following equation:
wherein Trans is the transmittance of light, I0To pass the optical power before the linear transmittance filter, Ifilterλ is the wavelength of light, which is the optical power after passing through the linear transmittance filter.
The optical wavelength extraction is not limited to the linear format, and fitting functions such as a polynomial, a sine, an exponential, and the like may be used or may be truncated into multi-segment linear interpolation as long as the optical power dependence of the transmission is monotonic.
If the incident light has multiple wavelengths, multiple modes, the transmitted power is the sum of the transmitted powers at the multiple transmittances.
The polarization rotation aging characteristics of the semiconductor light emitting chip were measured by a linear polarizer.
The third embodiment of the invention discloses an optical power detection unit with an optical element moving structure. In order to pass the collimated beam accurately through the provided through-hole and the optical element, an automatic motion system is usually introduced to move the optical element insertion structure. As shown in fig. 3, the structure includes a linear actuator 7 and a position sensor 8, and an optical element insertion plate 6 connects the linear actuator 7 and the position sensor 8. The linear actuator 7 drives the optical element insertion plate 6 to move relatively in a pushing or pulling mode, and the position sensor 8 performs closed-loop feedback according to a real-time position, so that collimated light beams are accurately controlled to pass through the through hole, the optical attenuator, the linear transmittance filter or the linear polarizer according to measurement requirements, and the photodiode 1 can detect different optical characteristics.
The optical power detection device provided by the embodiment of the invention comprises a plurality of optical power detection units which are arranged in an array. The optical power detecting unit is the optical power detecting unit in the above embodiments, and is not described herein again.
As shown in fig. 5, in the fourth embodiment of the present invention, the optical power detection apparatus is composed of an array of optical power monitoring units for ultra-high temperature aging testing, which are provided with a reflector, and is suitable for industrial mass testing. To save resources, only one monolithic heating metal block may be used. In order to be taken out and used conveniently, the device can also be arranged in a drawer mode, a row of chip detection units are arranged on two sides of the drawer respectively, and a plurality of drawers are placed in a high-temperature aging box at the same time for aging test.
The optical power monitoring device can also comprise an optical element inserting plate 6 and an optical element moving structure, wherein the optical element moving structure comprises a linear actuator 7 and a position sensor 8, the optical element inserting plate 6 is arranged in a transmission path of the collimated light beam 2, element hole groups corresponding to the optical power monitoring unit are arranged on the optical element inserting plate 6 in an array mode, each element hole group comprises at least one through hole and an element hole 9, optical elements such as an optical attenuator, a linear transmissivity filter or a linear polarizer and the like are installed in the element holes 9, the linear actuator 7 drives the optical element inserting plate 6 to move relatively in a pushing or pulling mode, closed-loop feedback is carried out by the position sensor 8 according to a real-time position, and the collimated light beam 2 is controlled to align the through hole or the element hole 9 in the optical element inserting plate 6 as required.
In addition, there are two main ways of arranging the cell hole sets: the first arrangement is that the through holes and the optical elements are arranged in a horizontal row according to a certain sequence, and then the horizontal row is repeatedly arranged in the horizontal direction to form a long row; in this manner, the distance between adjacent semiconductor light emitting chips is equal to or greater than the length of the row. A second arrangement is to arrange the through holes and the optical elements in a row in a certain order, and then the row is repeated longitudinally. Thus, the linear actuator can move the optical insert plate to pass a plurality of collimated beams through the through-hole or a particular optical element simultaneously as required by the test.
The invention is suitable for aging FP, DFB/DML and EML laser chips, in particular to optical chips produced in large scale, including semiconductor laser chips for communication, such as FP type, DFB type and EML type, optical detector chips, such as PD and APD, optical waveguide chips, such as PLCS and the like, and aging test of VCSEL laser high-power LD.
The above embodiments and principles are merely illustrative of the design ideas and features of the present invention, and are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and the protection scope of the present invention is not limited to the above embodiments. Therefore, any simple modification, equivalent change and modification made according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. The utility model provides an optical power monitoring unit for ultra-high temperature aging testing which characterized in that: the device comprises a heating metal block, a semiconductor light-emitting chip, a collimator and a photoelectric sensor; the semiconductor light-emitting chip is arranged above the heating metal block and can emit divergent light when being electrified, the collimator is arranged in a transmission path of the divergent light and changes the divergent light into a collimated or near-collimated light beam, the photoelectric sensor receives the collimated light beam after a certain stroke and detects the monitored optical power of the semiconductor light-emitting chip.
2. The optical power monitoring unit for ultra-high temperature burn-in test of claim 1, wherein: one or more reflectors are arranged in the transmission path of the collimated or near-collimated light beam, and the collimated light beam reflected by the reflectors is transmitted to the photodiode.
3. The optical power monitoring unit for ultra-high temperature burn-in test of claim 1, wherein: the collimator is a collimating or near-collimating lens.
4. The optical power monitoring unit for ultra-high temperature burn-in test of claim 1, wherein: the photoelectric sensor is a photodiode.
5. The optical power monitoring unit for ultra-high temperature burn-in test of claim 1, wherein: the transmission path of the collimated light beam is internally provided with a movable optical element inserting plate, the optical element inserting plate is provided with at least one element hole, and an optical attenuator, a linear transmissivity filter or a linear polarizer is arranged in the element hole.
6. The optical power monitoring unit for ultra-high temperature aging testing according to claim 5, characterized in that: the optical element insertion plate is also provided with a through hole, and the collimated light beams are incident on the photoelectric sensor through the through hole.
7. The optical power monitoring unit for ultra-high temperature aging testing according to claim 5, characterized in that: the optical element moving structure comprises a linear actuator, and the linear actuator drives the optical element insertion plate to move linearly.
8. The optical power monitoring unit for ultra-high temperature aging testing according to claim 7, characterized in that: the optical element moving structure further comprises a position sensor, and the position sensor performs closed-loop feedback according to the real-time position to control the collimated light beam to align with an optical attenuator, a linear transmissivity filter or a linear polarizer on the optical element inserting plate.
9. The utility model provides an optical power monitoring devices for ultra-high temperature aging testing which characterized in that: the optical power monitoring device comprises optical power monitoring units arranged in an array, wherein the optical power monitoring units are the optical power monitoring units in claim 1 or 2.
10. The optical power monitoring device for ultra-high temperature aging testing according to claim 9, characterized in that: the optical power monitoring device also comprises an optical element inserting plate and an optical element moving structure, wherein the optical element moving structure comprises a linear actuator and a position sensor, the optical element inserting plate is arranged in a transmission path of the collimated light beam, element hole groups corresponding to the optical power monitoring unit are arranged on the optical element inserting plate in an array mode, each element hole group comprises at least one through hole and one element hole, an optical attenuator, a linear transmissivity filter or a linear polarizer is installed in each element hole, the linear actuator drives the optical element inserting plate to move relatively in a pushing or pulling mode, the position sensor carries out closed-loop feedback according to a real-time position, and the collimated light beam is controlled to align the through hole or the element hole in the optical element inserting plate according to requirements.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911280187.4A CN110850267A (en) | 2019-12-13 | 2019-12-13 | Optical power monitoring unit and optical power monitoring device for ultra-high temperature aging test |
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| CN201911280187.4A CN110850267A (en) | 2019-12-13 | 2019-12-13 | Optical power monitoring unit and optical power monitoring device for ultra-high temperature aging test |
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| CN110850267A true CN110850267A (en) | 2020-02-28 |
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| CN201911280187.4A Pending CN110850267A (en) | 2019-12-13 | 2019-12-13 | Optical power monitoring unit and optical power monitoring device for ultra-high temperature aging test |
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