CN110850159A - Device for reducing influence of temperature on diode detector - Google Patents
Device for reducing influence of temperature on diode detector Download PDFInfo
- Publication number
- CN110850159A CN110850159A CN201911169766.1A CN201911169766A CN110850159A CN 110850159 A CN110850159 A CN 110850159A CN 201911169766 A CN201911169766 A CN 201911169766A CN 110850159 A CN110850159 A CN 110850159A
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- resistor
- diode
- amplifier
- resistance
- temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/14—Compensating for temperature change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/44—Modifications of instruments for temperature compensation
Abstract
The invention discloses a device for reducing the influence of temperature on a diode detector, which belongs to the field of power measurement and comprises a diode pair and an amplifier N1～N3Resistance R1～R12And a capacitor C1(ii) a A diode pair comprising two diodes packaged together; resistance R1And a resistance R2Configured for matching the diode input to 50 Ω; a resistor R3 and a resistor R4 which are configured as current limiting resistors for providing direct current bias for the diode pair, wherein the resistor R3 and the resistor R4 are respectively connected with the positive input end of the detector and the 1V precision reference through lines; resistance R5And a capacitor C1Forming a detection matching network; amplifier N1～N3And a resistance R6～R12Suppressor diode with completely symmetrical composition structureA temperature responsive amplifying circuit. The real-time property is good, and the influence of temperature change on the detection diode can be corrected in real time; good temperature compensation effect and temperature coefficient in small power measurement<0.12％/℃。
Description
Technical Field
The invention belongs to the field of power measurement, and particularly relates to a device for reducing the influence of temperature on a diode detector.
Background
The diode detector is widely applied to microwave and millimeter wave power measurement. Because the diode is a temperature sensitive device, the temperature response of the diode needs to be compensated in the microwave and millimeter wave power measurement.
Most of the currently adopted compensation methods are digital compensation, namely, the temperature change of the diode is monitored through a temperature sensor, the corresponding relation between the temperature and the detection voltage is established, and the detection voltage of the diode is digitally compensated according to the temperature change.
The existing digital temperature compensation scheme has certain disadvantages:
(1) the real-time performance is poor. The temperature change of the temperature sensor and the detection diode has certain time lag, and the temperature change of the detection diode cannot be reflected in real time;
(2) the temperature compensation effect is poor under low power. Under low power (minus 30dBm), the detection diode is affected more severely by temperature, and even after software compensation, the temperature coefficient of the detection diode exceeds 0.20%/DEG C, so that the measurement accuracy of a low-power signal is difficult to ensure.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides the device for reducing the influence of temperature on the diode detector, which is reasonable in design, overcomes the defects in the prior art and has a good effect.
In order to achieve the purpose, the invention adopts the following technical scheme:
a device for reducing the influence of temperature on a diode detector comprises a diode pair,Amplifier N1～N312 resistors R1～R12And a capacitor C1；
A diode pair comprising two diodes D1 and D2 packaged together, the diode pair being packaged on a wafer with highly uniform demodulation characteristics;
resistance R1And a resistance R2A resistance of 50 Ω configured for matching the diode input to 50 Ω;
the resistor R3 and the resistor R4 are configured as current limiting resistors for providing direct current bias for the diode pair, the resistance values of the resistor R3 and the resistor R4 are 330 kOmega, the resistor R3 and the resistor R4 are respectively connected with the positive input end of the detector and the 1V precision reference through lines, and 3 muA positive conducting current is provided for the diode;
resistance R5And a capacitor C1Forming a detection matching network;
amplifier N1～N3And a resistance R6～R12The temperature response amplifying circuit of the suppression diode with a completely symmetrical structure is formed;
the cathode of the diode D1 is connected with one end of the resistor R1, and the other end of the resistor R1 is grounded; the anode of the diode D1 and one end of the resistor R3 form a common terminal connected to the amplifier N1The other end of the resistor R3 is connected with 1V voltage; the cathode of the diode D2 and one end of the resistor R2 form a common end connected to the signal input end, the anode of the diode D2 and one end of the resistor R4, one end of the resistor R5 and one end of the resistor C1 form a common end connected to the amplifier N2The positive input terminal of (1); the other end of the resistor R4 is connected with 1V voltage, and the other end of the resistor R5 and the other end of the resistor C1 are respectively grounded; one end of the resistor R6 and one end of the resistor R7 form a common end which is connected to the amplifier N1The negative input terminal of (1); the other end of the resistor R7 and one end of the resistor R9 form a common end which is connected to the amplifier N2An output terminal of (a); the other end of the resistor R9 and one end of the resistor R10 form a common end which is connected to the amplifier N3The other end of the resistor R10 is grounded; the other end of the resistor R6 and one end of the resistor R8 form a common end which is connected to the amplifier N2Negative input terminal ofThe other end of the resistor R8 and one end of the resistor R11 form a common end which is connected to the amplifier N2An output terminal of (a); the other end of the resistor R11 and one end of the resistor R12 form a common end which is connected to the amplifier N3The other end of the resistor R12 is connected to the amplifier N3To the output terminal of (a).
Preferably, N1～N3Is an amplifier of the same type, a resistor R7And a resistance R8Have the same resistance value, the resistance R6For gain adjustment of the resistor, amplifier N1And amplifier N2Gain of
The invention has the following beneficial technical effects:
(1) the real-time property is good, and the influence of temperature change on the detection diode can be corrected in real time;
(2) the temperature compensation effect is good when the power is small, and the temperature coefficient is less than 0.12%/DEG C.
Drawings
Fig. 1 is a schematic circuit diagram of the apparatus of the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and detailed description:
as shown in figure 1, the device for reducing the influence of temperature on the diode detector comprises a diode pair and an amplifier N1～N312 resistors R1～R12And a capacitor C1；
A diode pair comprising two diodes D1 and D2 packaged together, the diode pair being packaged on a wafer with highly uniform demodulation characteristics;
resistance R1And a resistance R2A resistance of 50 Ω configured for matching the diode input to 50 Ω;
the resistor R3 and the resistor R4 are configured as current limiting resistors for providing direct current bias for the diode pair, the resistance values of the resistor R3 and the resistor R4 are 330 kOmega, the resistor R3 and the resistor R4 are respectively connected with the positive input end of the detector and the 1V precision reference through lines, and 3 muA positive conducting current is provided for the diode;
resistance R5And a capacitor C1Forming a detection matching network;
amplifier N1～N3And a resistance R6～R12The temperature response amplifying circuit of the suppression diode with a completely symmetrical structure is formed;
the cathode of the diode D1 is connected with one end of the resistor R1, and the other end of the resistor R1 is grounded; the anode of the diode D1 and one end of the resistor R3 form a common terminal connected to the amplifier N1The other end of the resistor R3 is connected with 1V voltage; the cathode of the diode D2 and one end of the resistor R2 form a common end connected to the signal input end, the anode of the diode D2 and one end of the resistor R4, one end of the resistor R5 and one end of the resistor C1 form a common end connected to the amplifier N2The positive input terminal of (1); the other end of the resistor R4 is connected with 1V voltage, and the other end of the resistor R5 and the other end of the resistor C1 are respectively grounded; one end of the resistor R6 and one end of the resistor R7 form a common end which is connected to the amplifier N1The negative input terminal of (1); the other end of the resistor R7 and one end of the resistor R9 form a common end which is connected to the amplifier N2An output terminal of (a); the other end of the resistor R9 and one end of the resistor R10 form a common end which is connected to the amplifier N3The other end of the resistor R10 is grounded; the other end of the resistor R6 and one end of the resistor R8 form a common end which is connected to the amplifier N2The other end of the resistor R8 and one end of the resistor R11 form a common end which is connected to the amplifier N2An output terminal of (a); the other end of the resistor R11 and one end of the resistor R12 form a common end which is connected to the amplifier N3The other end of the resistor R12 is connected to the amplifier N3To the output terminal of (a).
N1～N3Is an amplifier of the same type, a resistor R7And a resistance R8Have the same resistance value, the resistance R6For gain adjustment of the resistor, amplifier N1And amplifier N2Gain of
Anode voltage V for diode pair when RFIN is not inputD1、VD2Since the two diodes of diode pair D have nearly identical characteristics, both have V at different temperaturesD1≈VD2＝VDWherein V is under a fixed DC biasDIs affected by temperature; due to the amplifier N1Amplifier N2Has the same gain as
According to amplifier principle, for amplifier N3Comprises the following steps:
to ensure good common mode rejection ratio, R is set9～R12The resistances are the same, so equation (2) translates to:
Vout＝VN1-VN2(3)；
when formula (1) is taken into formula (3), it is found that when no signal is input to RFIN, V is different depending on the temperatureD1、VD2The value remains the same, V can be guaranteedoutIs always zero.
When the RFIN has signal input, the voltage value of the signal after passing through the diode is assumed to be VRFIs provided with
VD1＝VD+VRF(4)；
Since the other diode has no signal input, there is
VD2＝VD(5)；
Bringing the formulae (1), (4) and (5) into (3), there are
From the formula (6), V is influenced by temperatureDIs eliminated, only the input signal VRFIs amplified, so that the influence of temperature change on the diode can be effectively reduced.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art may make modifications, alterations, additions or substitutions within the spirit and scope of the present invention.
Claims (2)
1. An apparatus for reducing the effect of temperature on a diode detector, comprising: comprising a diode pair, an amplifier N1～N312 resistors R1～R12And a capacitor C1；
The diode pair comprises two diodes D1 and D2 which are packaged together, and the diode pair is packaged on a wafer and has a wave detection characteristic;
resistance R1And a resistance R2A resistance of 50 Ω configured for matching the diode input to 50 Ω;
the resistor R3 and the resistor R4 are configured as current limiting resistors for providing direct current bias for the diode pair, the resistance values of the resistor R3 and the resistor R4 are 330 kOmega, the resistor R3 and the resistor R4 are respectively connected with the positive input end of the detector and the 1V precision reference through lines, and 3 muA positive conducting current is provided for the diode;
resistance R5And a capacitor C1Forming a detection matching network;
amplifier N1～N3And a resistance R6～R12The temperature response amplifying circuit of the suppression diode with a completely symmetrical structure is formed;
the cathode of the diode D1 is connected with one end of the resistor R1, and the other end of the resistor R1 is grounded; the anode of the diode D1 and one end of the resistor R3 form a common terminal connected to the amplifier N1The other end of the resistor R3 is connected with 1V voltage; the cathode of the diode D2 and one end of the resistor R2 form a common end connected to the signal input end, the anode of the diode D2 and one end of the resistor R4, one end of the resistor R5 and one end of the resistor C1 form a common end connected to the amplifier N2The positive input terminal of (1); another of the resistors R4One end of the resistor R5 is connected with 1V voltage, and the other end of the resistor R5 and the other end of the resistor C1 are respectively grounded; one end of the resistor R6 and one end of the resistor R7 form a common end which is connected to the amplifier N1The negative input terminal of (1); the other end of the resistor R7 and one end of the resistor R9 form a common end which is connected to the amplifier N2An output terminal of (a); the other end of the resistor R9 and one end of the resistor R10 form a common end which is connected to the amplifier N3The other end of the resistor R10 is grounded; the other end of the resistor R6 and one end of the resistor R8 form a common end which is connected to the amplifier N2The other end of the resistor R8 and one end of the resistor R11 form a common end which is connected to the amplifier N2An output terminal of (a); the other end of the resistor R11 and one end of the resistor R12 form a common end which is connected to the amplifier N3The other end of the resistor R12 is connected to the amplifier N3To the output terminal of (a).
2. The apparatus for reducing the effect of temperature on a diode detector as set forth in claim 1, wherein: n is a radical of1～N3Is an amplifier of the same type, a resistor R7And a resistance R8Have the same resistance value, the resistance R6For gain adjustment of the resistor, amplifier N1And amplifier N2Gain of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911169766.1A CN110850159A (en) | 2019-11-26 | 2019-11-26 | Device for reducing influence of temperature on diode detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911169766.1A CN110850159A (en) | 2019-11-26 | 2019-11-26 | Device for reducing influence of temperature on diode detector |
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| Publication Number | Publication Date |
|---|---|
| CN110850159A true CN110850159A (en) | 2020-02-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911169766.1A Pending CN110850159A (en) | 2019-11-26 | 2019-11-26 | Device for reducing influence of temperature on diode detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113419107A (en) * | 2021-06-04 | 2021-09-21 | 上海华虹宏力半导体制造有限公司 | Power detector and power amplifier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04284708A (en) * | 1991-03-13 | 1992-10-09 | Fujitsu Ltd | Diode detector |
| CN1367951A (en) * | 1999-06-04 | 2002-09-04 | 艾利森电话股份有限公司 | Improved diode detector |
| CN102840920A (en) * | 2012-08-03 | 2012-12-26 | 中国科学院空间科学与应用研究中心 | Biasing circuit and temperature compensation low-frequency amplification circuit for microwave radiometer |
| CN104076859A (en) * | 2014-06-30 | 2014-10-01 | 成都赛英科技有限公司 | Microwave temperature compensation detector |
| CN203930567U (en) * | 2014-06-30 | 2014-11-05 | 成都赛英科技有限公司 | Microwave temperature-compensated detector |
-
2019
- 2019-11-26 CN CN201911169766.1A patent/CN110850159A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04284708A (en) * | 1991-03-13 | 1992-10-09 | Fujitsu Ltd | Diode detector |
| CN1367951A (en) * | 1999-06-04 | 2002-09-04 | 艾利森电话股份有限公司 | Improved diode detector |
| CN102840920A (en) * | 2012-08-03 | 2012-12-26 | 中国科学院空间科学与应用研究中心 | Biasing circuit and temperature compensation low-frequency amplification circuit for microwave radiometer |
| CN104076859A (en) * | 2014-06-30 | 2014-10-01 | 成都赛英科技有限公司 | Microwave temperature compensation detector |
| CN203930567U (en) * | 2014-06-30 | 2014-11-05 | 成都赛英科技有限公司 | Microwave temperature-compensated detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113419107A (en) * | 2021-06-04 | 2021-09-21 | 上海华虹宏力半导体制造有限公司 | Power detector and power amplifier |
| CN113419107B (en) * | 2021-06-04 | 2024-01-23 | 上海华虹宏力半导体制造有限公司 | Power detector and power amplifier |
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Application publication date: 20200228 |