CN110838335B - Electric leakage test method for Nand type flash memory - Google Patents
Electric leakage test method for Nand type flash memory Download PDFInfo
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- CN110838335B CN110838335B CN201810940068.6A CN201810940068A CN110838335B CN 110838335 B CN110838335 B CN 110838335B CN 201810940068 A CN201810940068 A CN 201810940068A CN 110838335 B CN110838335 B CN 110838335B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Abstract
The invention discloses a method for testing electric leakage of a Nand type flash memory. The Nand type flash memory comprises a memory cell and a sensing amplifier, wherein a first end of a high-voltage tube of the sensing amplifier is electrically connected with a first end of a pre-charging capacitor, a second end of the high-voltage tube and the first end of the memory cell are electrically connected with a bit line, a second end of the pre-charging capacitor is grounded, and a second end of the memory cell is electrically connected with a source line. The leakage test method of the Nand type flash memory comprises the following steps: in the erasing verification stage of the Nand flash memory, the stable voltage of the first end of the high voltage tube is compared with the reference voltage; and judging whether the high-voltage tube leaks electricity or not according to the comparison result. The invention carries out the leakage test of the high-voltage tube by multiplexing the erasing verification process, so that the voltage difference loaded at the two ends of the high-voltage tube is larger, the leakage condition of the high-voltage tube in the sensing amplifier can be effectively detected, and the reliability of the Nand type flash memory is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of Nand type flash memories, in particular to a method for testing electric leakage of a Nand type flash memory.
Background
The Nand flash memory is a nonvolatile memory, stores data by performing read-write operation on a memory cell, has the advantages of high rewriting speed, large storage capacity and the like, and is widely used in electronic products. With the heavy use of Nand flash memory, the requirement for reliability is increasing.
When the Nand type flash memory works, the state of the high voltage tube in the sense amplifier directly affects the reliability of the Nand type flash memory. When the high voltage tube has a leakage condition, the data in the memory cell cannot be kept for a long time, and errors may occur when the memory cell performs read, write or erase operations, thereby reducing the reliability of the Nand type flash memory.
Disclosure of Invention
The invention provides a leakage test method of a Nand flash memory, which is used for effectively detecting the leakage condition of a high-voltage tube in a sensing amplifier, thereby improving the reliability of the Nand flash memory.
The embodiment of the invention provides a leakage test method of a Nand type flash memory, wherein the Nand type flash memory comprises a memory cell and a sense amplifier, the sense amplifier comprises a high-voltage tube and a pre-charging capacitor, the first end of the high-voltage tube is electrically connected with the first end of the pre-charging capacitor, the second end of the high-voltage tube and the first end of the memory cell are electrically connected with a bit line, the second end of the pre-charging capacitor is grounded, and the second end of the memory cell is electrically connected with a source line; the leakage test method of the Nand type flash memory comprises the following steps:
in the erasing verification stage of the Nand type flash memory, comparing the stable voltage of the first end of the high-voltage tube with the reference voltage;
and judging whether the high-voltage tube leaks electricity or not according to the comparison result.
Specifically, the judging whether the high-voltage tube leaks electricity according to the comparison result includes:
and if the stable voltage of the first end of the high-voltage tube is determined to be greater than the reference voltage, determining that the high-voltage tube leaks electricity.
Specifically, the sense amplifier further comprises an amplifying module, wherein the amplifying module comprises a first input end, a second input end and an output end, the first input end is connected with the reference voltage, and the second input end is electrically connected with the first end of the high-voltage tube;
the determining that the regulated voltage of the first end of the high voltage tube is greater than the reference voltage comprises:
waiting for a preset time when entering the erasing verification stage;
reading a logic value output by the output end of the amplifying module;
and if the logic value is 0, determining that the stable voltage of the first end of the high-voltage tube is greater than the reference voltage.
Specifically, the determining whether the high-voltage tube leaks current according to the comparison result further includes:
and if the logic value is 1, judging that the high-voltage tube does not leak electricity.
Specifically, the erase verification of the Nand type flash memory includes:
raising a voltage of the source line to a supply voltage, wherein the supply voltage is greater than 4V;
controlling the high-pressure pipe to be turned off and controlling the storage unit to be turned on;
the precharge capacitance is discharged to 0 by a bias voltage internal to the sense amplifier.
In the invention, the magnitude of the stable voltage of the first end of the high-voltage tube and the magnitude of the reference voltage are compared in the erasing verification stage of the Nand type flash memory, and whether the high-voltage tube leaks electricity or not is judged according to the comparison result. The high-voltage tube leakage test is carried out through the multiplexing erasing verification process, so that the voltage difference loaded at the two ends of the high-voltage tube is larger, the voltage difference loaded at the two ends of the high-voltage tube is better matched with the voltage difference loaded at the two ends of the high-voltage tube in practical application, the leakage condition of the high-voltage tube in the sensing amplifier can be effectively detected, and the reliability of the Nand type flash memory is improved.
Drawings
FIG. 1 is a schematic structural diagram of a Nand flash memory according to an embodiment of the present invention;
FIG. 2 is a flow chart of an exemplary method for testing leakage in a Nand type flash memory;
FIG. 3 is a flow chart of a method for testing leakage of a Nand-type flash memory according to an embodiment of the present invention;
fig. 4 is a flow chart of the erase verification phase of a Nand type flash memory according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a Nand flash memory according to an embodiment of the present invention, and fig. 2 is a flowchart of an exemplary leakage testing method for a Nand flash memory, where as shown in fig. 1, the Nand flash memory includes a memory cell 10 and a sense amplifier 20, the sense amplifier 20 includes a high voltage tube Tg and a precharge capacitor C, a first end of the high voltage tube Tg is electrically connected to a first end of the precharge capacitor C, a second end of the high voltage tube Tg and a first end a of the memory cell 10 are electrically connected to a bit line BL, a second end of the precharge capacitor C is grounded, and a second end of the memory cell 10 is electrically connected to a source line CSL. The memory cell 10 includes a plurality of memory cells, each of which may include a Metal Oxide Semiconductor (MOS) transistor, and control terminals of the different memory cells are electrically connected to different word lines, for example, control terminals of transistors T1 through Tn in the memory cell 10 in fig. 1 are electrically connected to word lines W1 through Wn, respectively, and each word line controls on or off states of the transistor electrically connected thereto. The first terminal of the first transistor T1 in the plurality of memory cells is electrically connected to the bit line BL as the first terminal a of the memory cell 10, the second terminal of the last transistor Tn in the plurality of memory cells is electrically connected to the source line CSL as the second terminal b of the memory cell 10, and the first terminals of the other transistors in the plurality of memory cells are electrically connected to the second terminal of the previous transistor, thereby realizing the series connection of the plurality of memory cells.
It should be noted that the Nand type flash memory includes a plurality of memory cells 10, and only one memory cell 10 is exemplarily shown in fig. 1. The plurality of memory cells 10 have the same structure, and each memory cell 10 is connected to a different bit line BL.
Fig. 2 shows a leakage test method for a Nand type flash memory, which includes:
s210, in the read operation stage of the Nand type flash memory, the stable voltage of the first end of the high voltage pipe Tg and the reference voltage are compared.
Specifically, the leakage of the high-voltage tube is tested by a read operation of the Nand type flash memory. In the read operation of Nand flash memory, the source line CSL provides a low voltage, typically 0V, as shown in fig. 1, and the transistors in the memory cell 10 are all P-type transistors, and the control terminal is turned on when the control terminal is low. Therefore, all the word lines are loaded with a low level, so that all the transistors in the memory cell 10 are turned on, the low voltage on the source line CSL is transmitted to the first terminal a of the memory cell 10, the first terminal a of the memory cell 10 is electrically connected to the second terminal of the high voltage transistor Tg, and the voltage at the second terminal of the high voltage transistor Tg is a low voltage. A first terminal of the high voltage pipe Tg is electrically connected to a first terminal of the precharge capacitor C. Before the reading operation, the pre-charging capacitor C stores electric energy to form stable voltage. And controlling the high-voltage tube Tg to be cut off, wherein the voltage difference between the first end and the second end of the high-voltage tube Tg is a stable voltage on the pre-charging capacitor C. When the high voltage tube Tg is not leak, the voltage difference between the first end and the second end of the high voltage tube Tg remains unchanged and remains as a stable voltage on the pre-charge capacitor C. When the high-voltage tube Tg leaks electricity, a certain path exists between the first end and the second end of the high-voltage tube Tg, the voltage of the first end of the high-voltage tube Tg is larger than that of the second end, the first end transmits the electric energy to the second end, the pre-charging capacitor C discharges electricity, the voltage difference between the two ends of the high-voltage tube Tg is smaller and smaller along with the time, and is smaller than the stable voltage, namely the voltage of the first end of the high-voltage tube Tg cannot be maintained.
And S220, judging whether the Tg of the high-voltage pipe leaks electricity or not according to the comparison result.
In the above process, whether the high-voltage tube Tg leaks electricity may be determined according to a voltage difference between the first and second ends of the high-voltage tube Tg. In order to determine the voltage difference between the first terminal and the second terminal of the high voltage tube Tg, the sense amplifier 20 further includes an amplifying module 201, the amplifying module 201 includes a first input terminal in1, a second input terminal in2, and an output terminal out, the first input terminal in1 is connected to the reference voltage Vref, and the second input terminal in2 is electrically connected to the first terminal of the high voltage tube Tg. For example, the amplifying block 201 may be an amplifier, the first input terminal in1 is a positive input terminal, and the second input terminal in2 is a negative input terminal. The power input end of the amplifier inputs a bidirectional power supply, namely, the voltage VDD input by the positive power input end is positive power voltage, and the voltage VEE input by the negative power input end is negative power voltage. The voltage of the reference voltage Vref is set to be less than or equal to the stable voltage on the pre-charge capacitor C. When the high-voltage tube Tg is not electrified, the first end and the second end of the high-voltage tube Tg are disconnected, the stable voltage on the pre-charging capacitor C cannot be changed, the voltage of the negative input end of the amplifier is greater than that of the positive input end, and therefore the logic value output by the amplifier is 0. When the high-voltage tube Tg leaks electricity, a certain path exists between the first end and the second end of the high-voltage tube Tg, and the voltage of the first end of the high-voltage tube Tg is larger than that of the second end, so that the high-voltage tube Tg can transmit the electric energy of the first end to the second end, the pre-charging capacitor C discharges at the moment, the voltage on the pre-charging capacitor C gradually decreases until the reference voltage Vref is larger than that of the pre-charging capacitor C, and the logic value output by the amplifier is 1 at the moment. Therefore, whether the high-voltage tube Tg leaks electricity can be judged through the logic value output by the amplifying module 201.
However, the applicant finds that, since the sense amplifier 20 is internally used with a low voltage tube, the bias voltage (the stable voltage of the pre-charge capacitor C) provided for the pre-charge capacitor C inside the sense amplifier 20 is also low, and the stable voltage on the pre-charge capacitor C does not exceed 2V at most, and the voltage value is relatively small, so that the voltage difference loaded between the first end and the second end of the high voltage tube Tg is relatively small, which is not consistent with the relatively large voltage difference loaded at the two ends of the high voltage tube Tg in practical application, and the leakage condition of the high voltage tube Tg cannot be effectively detected.
In view of the above problems, an embodiment of the present invention further provides a method for testing leakage of a Nand flash memory. Fig. 3 is a flowchart of a method for testing leakage of a Nand-type flash memory according to an embodiment of the present invention, and as shown in fig. 3, the method for testing leakage of a Nand-type flash memory includes:
s310, in the erasing verification stage of the Nand type flash memory, the stable voltage of the first end of the high voltage pipe Tg is compared with the reference voltage.
If the high-voltage tube Tg is not leaked, the stable voltage at the first end of the high-voltage tube Tg is the initial voltage of the pre-charging capacitor C, and is usually 0V (the pre-charging capacitor C is completely discharged); if the high voltage tube Tg leaks, the stable voltage at the first end of the high voltage tube Tg is the final voltage of the pre-charge capacitor C (the voltage at the time of charging is completed), and the final voltage of the pre-charge capacitor C in this embodiment can reach the voltage provided by the source line CSL. A reference voltage is used as a reference value for judging whether the high-voltage tube leaks electricity, and optionally, the reference voltage is larger than the initial voltage of the pre-charging capacitor C when the high-voltage tube Tg does not leak electricity and smaller than the final voltage (the voltage provided by the source line CSL) of the pre-charging capacitor C when the high-voltage tube Tg leaks electricity; in particular, when the unidirectional power is input to the power input terminal of the amplifier, the reference voltage may also be equal to the initial voltage of the pre-charge capacitor C when the high-voltage pipe Tg is not drained.
Specifically, in the erase verification stage of the Nand flash memory, the source line CSL supplies a voltage, typically a power supply voltage, and the P-type transistor in fig. 1 is also used as an example for description. Loading a low level to all the word lines to turn on all the transistors in the memory cell 10, transmitting the voltage on the source line CSL to the first terminal a of the memory cell 10, electrically connecting the first terminal a of the memory cell 10 with the second terminal of the high-voltage transistor Tg, where the voltage on the second terminal of the high-voltage transistor Tg is the voltage on the source line CSL; a first terminal of the high voltage pipe Tg is electrically connected to a first terminal of the precharge capacitor C. Before the erase verify phase, the pre-charge capacitor C is discharged, making its voltage zero. The high voltage tube Tg is controlled to be turned off, and the voltage difference between the first end and the second end of the high voltage tube Tg is the voltage provided by the source line CSL. When the high voltage tube Tg is not electrically leaked, the voltage difference between the first end and the second end of the high voltage tube Tg remains unchanged and is still the voltage provided to the source line CSL, and at this time, the voltage at the first end of the high voltage tube Tg is always 0. When the high-voltage tube Tg leaks electricity, a certain path exists between the first end and the second end of the high-voltage tube Tg, the voltage of the second end of the high-voltage tube Tg is larger than that of the first end, the second end transmits the electric energy to the first end, the pre-charging capacitor C is charged, the voltage difference between the two ends of the high-voltage tube Tg is smaller and smaller along with the time and smaller than the voltage provided by the source line CSL, the voltage of the first end of the high-voltage tube Tg gradually rises, and the voltage of the first end of the high-voltage tube Tg is equal to the voltage provided by the source line CSL.
And S320, judging whether the Tg of the high-voltage pipe leaks electricity or not according to the comparison result.
With continued reference to fig. 1, the amplifying module 201 of the sense amplifier 20 has a first input terminal in1 connected to the reference voltage Vref, and a second input terminal in2 electrically connected to the first terminal of the high voltage transistor Tg. The amplification module 201 may be an amplifier. The first input terminal in1 is a positive input terminal, and the second input terminal in2 is a negative input terminal. The power input end of the amplifier inputs a unidirectional power supply, namely, the voltage VDD input by the positive power input end is positive power voltage, and the voltage VEE input by the negative phase input end is zero. When the high-voltage tube Tg is not electrified, the first end and the second end of the high-voltage tube Tg are disconnected, the second end of the high-voltage tube Tg cannot transmit electric energy to the first end, the pre-charging capacitor C is charged, therefore, the voltage on the pre-charging capacitor C is still zero, the voltage of the positive input end of the amplifier is larger than that of the negative input end, and the logical value of a signal output by the amplifier is 1. When the high-voltage tube Tg leaks electricity, a certain path exists between the first end and the second end of the high-voltage tube Tg, the voltage of the second end of the high-voltage tube Tg is larger than that of the first end, the second end transmits electric energy to the first end to charge the pre-charging capacitor C, the stable voltage on the pre-charging capacitor C is larger than the reference voltage Vref, and at the moment, the logic value output by the amplifier is 0. Therefore, whether the high-voltage tube Tg leaks or not can be determined by the high-low level of the output signal of the amplifying module 201.
The voltage on the source line CSL may be raised to a supply voltage, typically greater than 4V. Therefore, the voltage difference loaded between the first end and the second end of the high-voltage tube Tg is larger, the voltage difference better conforms to the voltage difference loaded at the two ends of the high-voltage tube Tg in practical application, the electric leakage condition of the high-voltage tube in the sensing amplifier can be effectively detected, and the reliability of the Nand flash memory is improved.
According to the technical scheme of the embodiment, in the erasing verification stage of the Nand flash memory, the stable voltage of the first end of the high-voltage tube Tg is compared with the reference voltage, whether the high-voltage tube Tg leaks electricity or not is judged according to the comparison result, the high-voltage tube leakage test is carried out through the multiplexing erasing verification process, the voltage difference loaded at the two ends of the high-voltage tube Tg is larger, the voltage difference loaded at the two ends of the high-voltage tube Tg in practical application can be better matched with the voltage difference loaded at the two ends of the high-voltage tube Tg, the leakage condition of the high-voltage tube in the sensing amplifier can be effectively detected, and therefore the reliability of the Nand flash memory is improved.
On the basis of the above technical solution, fig. 4 is a flowchart of an erase verification phase of a Nand-type flash memory according to an embodiment of the present invention, where determining that a regulated voltage of a first end of a high voltage pipe is greater than a reference voltage includes:
s410, waiting for a preset time when entering the erasing verification stage.
Specifically, when the high voltage tube Tg leaks electricity, the second end of the high voltage tube Tg transmits the electric energy to the first end, and there is a charging process for charging the pre-charging capacitor C, in which the voltage of the first end of the high voltage tube gradually increases, and therefore it takes a certain time to reach a stable voltage. In the process that the voltage of the first end of the high-voltage tube rises to the stable voltage, the situation that the voltage of the first end of the high-voltage tube is smaller than the reference voltage inevitably exists, therefore, in order to avoid misdetection of whether the high-voltage tube leaks electricity and accurately read the logic value output by the output end of the amplification module, the preset time can be waited when the high-voltage tube enters the erasing verification stage, and the voltage of the first end of the high-voltage tube rises to be larger than the reference voltage when the high-voltage tube leaks electricity. Optionally, the preset time is set to 10us-150us, and when the high voltage tube Tg leaks electricity, the storage voltage after the pre-charge capacitor C is charged for a preset time is greater than the reference voltage Vref. In addition, the reference voltage Vref takes a value between the initial voltage and the final voltage of the pre-charge capacitor C, and the value of the reference voltage Vref should be as close as possible to the initial voltage of the pre-charge capacitor C, so as to reduce the preset time, that is, reduce the waiting time for reading the logic value, and further improve the leakage test efficiency.
And S420, reading the logic value output by the output end of the amplifying module.
The Nand type flash memory may further include a control unit electrically connected to the sense amplifier 20. The control unit is used to read the logic value output by the sense amplifier 20.
And S430, if the logic value is 0, determining that the stable voltage of the first end of the high-voltage tube is greater than the reference voltage.
When the logical value is 0, the high-voltage tube Tg leakage is indicated.
In addition, if the logical value is 1, it is determined that the regulated voltage of the first terminal of the high-voltage tube is less than the reference voltage.
When the logical value is 1, it can be said that the high-voltage tube Tg is not electrically leaked.
On the basis of the above technical solution, the control unit records the state of the memory cell 10 according to the read logical value output by the sense amplifier 20. When the high voltage pipe Tg leaks electricity, the control unit reads the logical value of the sense amplifier 20 as 0 and records. When the storage unit 10 is needed again to store data, the control unit rejects the chip with the electric leakage of the high-voltage tube Tg according to the recorded logic value so as to improve the reliability of the stored data.
In addition, the erasure verification process performs verification in units of pages, thus improving the efficiency of screening chips with low reliability.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (4)
1. A leakage test method of a Nand type flash memory comprises a memory cell and a sense amplifier, wherein the sense amplifier comprises a high-voltage tube and a pre-charging capacitor, a first end of the high-voltage tube is electrically connected with a first end of the pre-charging capacitor, a second end of the high-voltage tube and a first end of the memory cell are electrically connected with a bit line, a second end of the pre-charging capacitor is grounded, and a second end of the memory cell is electrically connected with a source line; the method for testing the electric leakage of the Nand type flash memory is characterized by comprising the following steps:
in the erasing verification stage of the Nand type flash memory, comparing the stable voltage of the first end of the high-voltage tube with the reference voltage;
judging whether the high-voltage tube leaks electricity according to the comparison result;
the erasing verification of the Nand type flash memory comprises the following steps:
raising a voltage of the source line to a supply voltage, wherein the supply voltage is greater than 4V;
controlling the high-pressure pipe to be turned off and controlling the storage unit to be turned on;
discharging the pre-charge capacitance to 0 by a bias voltage internal to the sense amplifier;
the reference voltage is used as a reference value for judging whether the high-voltage tube leaks electricity, and comprises the following steps:
the reference voltage is greater than the initial voltage of the pre-charging capacitor when the high-voltage tube does not leak electricity and is less than the final voltage of the pre-charging capacitor when the high-voltage tube leaks electricity; when the power input end of the amplifier inputs the unidirectional power, the reference voltage is equal to the initial voltage of the pre-charging capacitor when the high-voltage tube does not leak electricity.
2. A leakage test method for a Nand-type flash memory according to claim 1, wherein the judging whether the high-voltage tube leaks current according to the comparison result comprises:
and if the stable voltage of the first end of the high-voltage tube is determined to be greater than the reference voltage, determining that the high-voltage tube leaks electricity.
3. A leakage test method for a Nand-type flash memory according to claim 2, wherein the sense amplifier further comprises an amplifying module, the amplifying module comprises a first input terminal, a second input terminal and an output terminal, the first input terminal is connected to the reference voltage, the second input terminal is electrically connected to the first terminal of the high voltage tube;
the determining that the regulated voltage of the first end of the high voltage tube is greater than the reference voltage comprises:
waiting for a preset time when entering the erasing verification stage;
reading a logic value output by the output end of the amplifying module;
and if the logic value is 0, determining that the stable voltage of the first end of the high-voltage tube is greater than the reference voltage.
4. A leakage test method for a Nand-type flash memory according to claim 3, wherein the judging whether the high-voltage tube leaks current according to the comparison result further comprises:
and if the logic value is 1, judging that the high-voltage tube does not leak electricity.
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| CN105825889A (en) * | 2015-01-22 | 2016-08-03 | 力晶科技股份有限公司 | Transistor testing circuit and method thereof, semiconductor memory apparatus and semiconductor apparatus |
| CN107424650A (en) * | 2017-08-11 | 2017-12-01 | 北京芯思锐科技有限责任公司 | A kind of memory and its detection method and chip |
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