CN110808726B - Programmable capacitor array structure - Google Patents
Programmable capacitor array structure Download PDFInfo
- Publication number
- CN110808726B CN110808726B CN201911038924.XA CN201911038924A CN110808726B CN 110808726 B CN110808726 B CN 110808726B CN 201911038924 A CN201911038924 A CN 201911038924A CN 110808726 B CN110808726 B CN 110808726B
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- switch
- capacitor
- capacitor array
- branch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a programmable capacitor array structure, which comprises: the capacitor array comprises two-stage capacitor arrays distributed at two ends of the single-pole multi-throw switch, and corresponding capacitors of the two-stage capacitor arrays are reversely connected in series at two ends of the single-pole multi-throw switch and are used for providing different capacitors for each radio frequency switch branch of the single-pole multi-throw switch and combining the capacitors to obtain more different capacitance values; the single-pole multi-throw switch comprises a plurality of radio frequency switch branches, and is used for selectively connecting each capacitance branch of the capacitance array between a radio frequency input port and a radio frequency output port under the control of the control logic module so as to provide a radio frequency path; and the control logic module is used for generating grid voltage and source-drain control signals required by switching on and off each radio frequency switch branch of the single-pole multi-throw switch under the control of a system control signal.
Description
Technical Field
The present invention relates to a programmable capacitor array structure, and more particularly, to a programmable capacitor array circuit capable of improving power distribution of a capacitor array and a radio frequency switch, reducing harmonic nonlinearity, and improving quality factor.
Background
With the development of mobile devices, the antenna size is smaller and the application frequency band is wider, so that Aperture Tuning (Aperture Tuning) and Impedance Tuning (Impedance Tuning) are often required to be used together, and the antenna Impedance can be tuned in a large range by using the programmable capacitor array, so that multi-mode multi-frequency high-efficiency reuse of the antenna is realized. Fig. 1 is a schematic diagram of aperture tuning and impedance tuning, where an aperture tuning circuit is connected between an antenna ANT and ground, and an impedance tuning circuit is connected between the antenna ANT and a radio frequency front end RFFE, and aperture tuning and impedance tuning are typically implemented using a programmable capacitor array.
The programmable capacitor array, as a key component of the antenna tuner, can improve and realize the multi-mode multi-frequency high-efficiency reuse of the antenna. The programmable capacitor array is composed of a high-performance radio frequency switch control module SPnT and a capacitor array, and key performances of the programmable capacitor array include power capacity, linearity, capacitance adjustment ratio, step length, quality factor and the like.
Fig. 2 is a schematic diagram of a conventional programmable Capacitor Array, in which a radio frequency signal enters from a P1 port and is transmitted to a radio frequency output port P2 through n branches, each branch is formed by cascading a Capacitor Ci and a radio frequency switch branch SWi, i=1, 2, … …, n, wherein the capacitors C1 to Cn form a Capacitor Array (Capacitor Array), and the radio frequency switch branches SW1 to SWn form a single-pole multi-throw switch (SPnT).
Fig. 3 is a conventional programmable capacitor array circuit that includes a capacitor array 10, a single pole, multiple throw switch (SPnT) 20, and a control logic module 30. Wherein the capacitor array 10 is composed of capacitors C1-Cn, typically C1-Cn are arranged in power, e.g., ci=2 i-1 C, i=1, 2, … …, n for eachThe branches provide different capacitances; the single-pole multi-throw switch (SPnT) 20 is composed of radio frequency switch branches SW1 to SWn, and is used for selectively connecting capacitors C1 to Cn between a radio frequency input port T and a radio frequency output port ANT under the control of the control logic module 30; the Control Logic module 30 is composed of a low dropout regulator LDO, a Logic circuit (Logic), a Level shifter (Level shift) and a negative voltage generator NVG, and is configured to generate a bias positive voltage and a bias negative voltage required for turning on and off each radio frequency switch branch of the single pole multiple throw switch (SPnT) 20 under the Control of a system Control signal Control.
Fig. 4 is a schematic diagram of a radio frequency switch branch of a conventional programmable capacitor array circuit, which is formed by cascading a gate common resistor Rgc (i), a body common resistor Rbc (i) and Ki radio frequency switches, each radio frequency switch is formed by a switching tube M (i, j), a gate resistor Rg (i, j), a body resistor Rb (i, j) and a drain-source resistor Rsd (i, j), i=1, 2, … …, n, j=ki, ki-1, … …, 1. Fig. 4 shows rf switch branches of a conventional programmable capacitor array circuit, i.e. SWi, ki groups of rf switches in fig. 3 form 1 rf switch branch, n rf switch branches in total, ki=m, i=1, 2, … …, n, i.e. the lamination stages of all rf switch branches are identical.
The radio frequency switch branches shown in fig. 4 are cascaded in capacitance to form a programmable capacitance array branch, namely, the upper part of fig. 5, and the equivalent circuits of the radio frequency switch branches when being switched on and off are shown in the lower left part and the lower right part of fig. 5. The corresponding quality factor Q of the branch capacitor and the voltage Vsw born by the switch are respectively:
in FIG. 5 and the above, rsw is the total on-resistance of the RF switch branch when the RF switch is turned on, ron is the unit width on-resistance of the RF switch when the RF switch is turned on, C is the programmable capacitor array branch capacitance, V RF The radio frequency switch circuit is characterized in that the radio frequency switch circuit is a radio frequency voltage, csw is a distributed capacitance when a radio frequency switch branch is disconnected, m is the number Ki of radio frequency switches cascaded by the radio frequency switch branch, w is the width of a single radio frequency switch, and f is the working frequency.
However, as the traditional programmable capacitor array uses a single-stage capacitor, the cascade stages of the branch switches are consistent, the quality factor and the power capability cannot be optimized, and the radio frequency switch adopts negative pressure control, so that a potential shifter is needed, the digital structure is complex, and a large area is occupied.
Disclosure of Invention
In order to overcome the defects of the prior art, one of the purposes of the present invention is to provide a programmable capacitor array structure, which not only can increase the power withstand voltage capability of the capacitor array, improve the power distribution of the capacitor array and the radio frequency switch, reduce the power capability requirement of the radio frequency switch, thereby reducing the number of lamination stages, and further reduce the on-resistance and improve the design of quality factors.
The invention also aims to provide a programmable capacitor array structure which can form a tuning capacitor array and simultaneously can control DC blocking by a radio frequency switch, wherein the radio frequency switch adopts gate-source relative voltage control, a negative voltage generating circuit and a potential translator are not needed, and the digital control circuit structure and the digital radio frequency isolation requirement are simplified.
It is still another object of the present invention to provide a programmable capacitor array structure that improves harmonic nonlinearity of the circuit.
To achieve the above and other objects, the present invention provides a programmable capacitor array structure, comprising:
the capacitive array comprises two stages of capacitive arrays distributed at two ends of the single-pole multi-throw switch, and each capacitive branch of the two stages of capacitive arrays is connected in series at two ends of the single-pole multi-throw switch and is used for providing different capacitances for each radio frequency switch branch of the single-pole multi-throw switch and combining the different capacitances to obtain more different capacitance values;
the single-pole multi-throw switch comprises a plurality of radio frequency switch branches, and is used for selectively connecting each capacitance branch of the capacitance array between a radio frequency input port and a radio frequency output port under the control of the control logic module so as to provide a radio frequency path;
and the control logic module is used for generating grid voltage and source-drain control signals required by switching on and off each radio frequency switch branch of the single-pole multi-throw switch under the control of a system control signal.
Preferably, the two-stage capacitor array is respectively composed of two groups of capacitors C11-Cn 1 and C12-Cn 2, corresponding capacitors in the two groups of capacitors are reversely connected in series in the corresponding capacitor array branch circuit through the corresponding radio frequency switch branch circuit, and the capacitors Ci1 and Ci2 in reverse series and the radio frequency switch branch circuit SWi of the single-pole multi-throw switch form a programmable capacitor array branch circuit.
Preferably, the radio frequency input signal is connected to the positive/negative terminal of each capacitor of the first stage capacitor arrays C11 to Cn1 from the radio frequency input port, the negative/positive terminal of each capacitor Ci1 is connected to the input terminal of the corresponding radio frequency switch branch SWi, each output terminal P2i of the radio frequency switch branch SWi is connected to the negative/positive terminal of the corresponding capacitor Ci2 of the second stage capacitor arrays C12 to Cn2, and the positive/negative terminal of each capacitor of the second stage capacitor arrays C12 to Cn2 is connected to the radio frequency output port.
Preferably, each radio frequency switch branch SWi comprises sequentially cascaded switching tubes M (i, ki) -M (i, 1), the negative terminal of the capacitor Ci1 of the first stage capacitor array is connected to the drain of the switching tube M (i, ki), the source of the switching tube M (i, ki) is connected to the drain of the switching tube M (i, ki-1), …, and the source of the switching tube M (i, 2) is connected to the drain of the switching tube M (i, 1); the body electrode resistor Rb (i, j) is connected between one ends of the body electrode and the body electrode common resistor Rbc (i) of the switch tube M (i, j), the other end of the body electrode common resistor Rbc (i) is grounded, the drain-source resistor Rds (i, j) is connected between the drain electrode and the source electrode of the switch tube M (i, j), the grid resistor Rg (i, j) is connected between the grid electrode of the switch tube M (i, j) and one end of the grid electrode common resistor Rgc (i), the other end of the grid electrode common resistor Rgc (i) is connected with the grid voltage Vgi, the source electrode of the switch tube M (i, 1) is the output end P2i of the radio frequency switch branch SWi, the grid voltage Vgi is also connected to one end of the NAND gate NANDi, the switch array permission signal En is connected to the other end of the NAND gate NANDi, and the output end of the NAND gate NANDi is connected to the source electrode of the switch tube M (i, 1) through the isolation resistor Rc (i).
Preferably, the control logic module comprises a low dropout voltage regulator and a logic circuit, the system control signal is connected to an input end of the logic circuit, a power supply is connected to an input end of the low dropout voltage regulator, an output end of the low dropout voltage regulator is connected to a power supply end of the logic circuit, and an output end of the logic circuit is connected to a gate voltage and a source-drain control signal input end of each radio frequency switch branch SWi of the single pole multiple throw switch.
Preferably, the capacitors C11 to Cn1 of the first-stage capacitor array are arranged in power.
Preferably, the capacitors C12 to Cn2 of the second-stage capacitor array are arranged in power.
Preferably, the number of layers of each radio frequency switch branch SWi is different according to the capacitor array weight.
Preferably, the two-stage capacitor array series structure of the capacitor array adopts an inverse parallel array layout structure and then an inverse series array layout structure so as to improve harmonic nonlinearity.
Preferably, the two-stage capacitor array is respectively composed of two groups of capacitors C11 to Cn1 and C12 to Cn2, corresponding capacitors in the two groups of capacitors are reversely connected in series in the corresponding capacitor array branch through the corresponding radio frequency switch branch, the reversely connected capacitors Ci1 and Ci2 and the radio frequency switch branch SWi of the single-pole multi-throw switch form a programmable capacitor array branch, the capacitor Ci1 is connected in parallel by the capacitor Ci1a and the capacitor Ci1b in reverse parallel, the capacitor Ci2 is connected in parallel by the capacitor Ci2a and the capacitor Ci2b in reverse parallel, and then reversely connected in series at two ends of the corresponding radio frequency switch branch of the single-pole multi-throw switch.
Compared with the prior art, the programmable capacitor array structure has the advantages that the capacitor array power voltage resistance capability can be increased by adopting the two-stage capacitor array series connection, the capacitor array and radio frequency switch power distribution is improved, the radio frequency switch power capability requirement is reduced, the stacking level is reduced, the on resistance is reduced, and the design of the quality factor is improved.
Drawings
FIG. 1 is a schematic diagram of prior art antenna impedance matching and aperture tuning;
FIG. 2 is a schematic diagram of a conventional programmable capacitor array;
FIG. 3 is a schematic diagram of a conventional programmable capacitor array circuit;
FIG. 4 is a schematic diagram of a RF switch branch of a conventional programmable capacitor array circuit;
FIG. 5 is a schematic diagram of a conventional programmable capacitor array branch circuit;
FIG. 6 is a schematic circuit diagram of an embodiment of a programmable capacitor array structure according to the present invention;
FIG. 7a is a schematic diagram illustrating a structure of a branch circuit of the programmable capacitor array of FIG. 6 according to the present invention;
FIG. 7b is a schematic diagram of a specific circuit of the RF switch branch SWi according to the present invention;
FIG. 8 is a schematic circuit diagram of another embodiment of a programmable capacitor array structure according to the present invention;
FIG. 9a is a schematic diagram of a capacitive network of different combinations;
FIG. 9b is a schematic diagram of a series-parallel array according to the present invention;
FIG. 10a is a graph showing the Q value comparison between the present invention and the conventional technology;
FIG. 10b is a harmonic comparison of the present invention and the conventional art
Detailed Description
Other advantages and effects of the present invention will become readily apparent to those skilled in the art from the following disclosure, when considered in light of the accompanying drawings, by describing embodiments of the present invention with specific embodiments thereof. The invention may be practiced or carried out in other embodiments and details within the scope and range of equivalents of the various features and advantages of the invention.
Fig. 6 is a schematic circuit diagram of an embodiment of a programmable capacitor array structure according to the present invention. As shown in fig. 6, a programmable capacitor array structure of the present invention includes: a Capacitor array (Capacitor) 10, a single pole multiple throw switch (SPnT) 20, and a control logic module 30.
Wherein the capacitor array 10 comprises two-stage capacitor arrays distributed at two ends of a single-pole multi-throw switch (SPnT) 20, the two-stage capacitor arrays are serially distributed at two ends of a radio frequency switch to form a tuning capacitor array and simultaneously can also serve as the radio frequency switch to control DC blocking effect, the two-stage capacitor arrays respectively comprise two groups of capacitors C11-Cn 1 and C12-Cn 2, the corresponding capacitors of the two groups of capacitors are reversely serially connected in corresponding capacitor array branches, and the capacitors C11-Cn 1 and C12-Cn 2 are usually arranged in power order, for example, ci1=Ci2=2 i C, the total capacitance ci=2 of the branch i-1 C, i=1, 2, … …, n, the capacitors arranged in power are used to provide different capacitors for each branch and can be combined to obtain different capacitance values; the single pole multiple throw switch (SPnT) 20 is composed of radio frequency switch branches SW1 to SWn, and is used for selectively connecting capacitors C11 to Cn1 and C12 to Cn2 in series under the control of the control logic module 30, and then connecting the capacitors between a radio frequency input port T and a radio frequency output port ANT to provide a radio frequency path; the Control Logic module 30 is composed of a low dropout regulator LDO and a Logic circuit (Logic) for generating a gate voltage Vgi and a source-drain Control signal En, i=1, 2, … …, n required for turning on and off each radio frequency switching leg of the single pole multiple throw switch (SPnT) 20 under the Control of a system Control signal Control.
The capacitors Ci1 and Ci2 in reverse series and the radio frequency switch branch SWi form a programmable capacitor array branch, i=1, 2, … …, n, as shown in fig. 7a, the positive end of Ci1 is a radio frequency input port T, the negative end of Ci1 is connected to the input end of a switch SWi, namely the drain electrode of a switch tube M (i, ki), the output end P2i of the switch SWi, namely the source electrode of the switch tube M (i, 1), is connected to the negative end of the capacitor Ci2, and the positive end of Ci2 is connected to a radio frequency output port ANT; fig. 7b is a specific circuit configuration diagram of a radio frequency switch branch SWi according to the invention, the switch tubes M (i, ki) to M (i, 1) are cascaded in turn, i.e. the source of the switch tube M (i, ki) is connected to the drain of the switch tube M (i, ki-1), … …, and the source of the switch tube M (i, 2) is connected to the drain of the switch tube M (i, 1); the body electrode resistor Rb (i, j) is connected between one ends of the body electrode and the body electrode common resistor Rbc (i) of the switch tube M (i, j), the other end of the body electrode common resistor Rbc (i) is grounded, the drain-source resistor Rds (i, j) is connected between the drain electrode and the source electrode of the switch tube M (i, j), the grid resistor Rg (i, j) is connected between the grid electrode of the switch tube M (i, j) and one end of the grid electrode common resistor Rgc (i), the other end of the grid electrode common resistor Rgc (i) is connected with the grid voltage Vgi, j=Ki, ki-1, … …,1, and the source electrode of the switch tube M (i, 1) is namely the output end P2i of the radio frequency switch branch SWi; the gate voltage Vgi is also connected to one end of the nand gate NANDi, the source-drain control signal En is connected to the other end of the nand gate NANDi, and the output end of the nand gate NANDi is connected to the source of the switching transistor M (i, 1) through the isolation resistor Rc (i).
It should be noted that, in fig. 7a, the series capacitors may be reversed as a whole, i.e., the negative terminal of the capacitor Ci1 is connected to the rf input port T, the positive terminal of the capacitor Ci1 is connected to the input terminal of the switch SWi, i.e., the drain of the switch tube M (i, ki), the negative terminal of the other capacitor Ci2 is connected to the rf output port ANT, and the output terminal P2i of the switch SWi, i.e., the source of the switch tube M (i, 1), is connected to the positive terminal of the capacitor Ci 2.
Specifically, the radio frequency input signal is connected to the positive ends of C11-Cn 1 from the radio frequency input port T; the negative terminal of Ci1 is connected to the input of a switch SWi, the output P2i of which is connected to the negative terminal of Ci2, i=1, 2, … …, n; the positive ends of C12-Cn 2 are connected to the radio frequency output port ANT; the system Control signal Control is connected to an input terminal of a Logic circuit (Logic) of the Control Logic module 30, the power supply AVDD is connected to an input terminal of the low dropout regulator LDO, an output terminal of the low dropout regulator LDO is connected to a power supply terminal of the Logic circuit (Logic), and an output terminal of the Logic circuit (Logic) is connected to a gate voltage Vgi and a source-drain Control signal En input terminal of each radio frequency switch branch SWi of the single pole multiple throw switch (SPnT) 20, i=1, 2, … …, n.
Therefore, the capacitor array is connected in series by adopting the two-stage capacitor array, the structure can improve the power distribution of the capacitor array and the radio frequency switch, reduce the power capability requirement of the radio frequency switch, reduce the lamination level, reduce the on-resistance and improve the quality factor.
It should be noted that, in the present invention, the number of lamination stages of each rf switch branch SWi is different from each other according to the weight optimization design of the capacitor array, that is, K1, K2, … …, kn are not completely equal, kn=m, so as to optimize the quality factor as much as possible.
In another embodiment of the present invention, as shown in fig. 8, the two-stage capacitor array series structure of the capacitor array 10 adopts an inverse parallel-series array layout to improve harmonic nonlinearity.
The principle of this embodiment is explained first as follows:
in an integrated circuit, the capacitor has nonlinearity and the expression is as follows:
C(V)＝C 0 (1+b 1 V+b 2 V 2 )
wherein C is 0 Is static capacitance, b 1 Related to the second harmonic, b 2 Associated with the third harmonic.
The simulation results of the capacitor nonlinearity comparison are shown in table 1, and it can be seen that the same-direction parallel connection is worst, the same-direction parallel connection can reduce the second harmonic and the third harmonic to a certain extent, the parallel capacitor array adopts the reverse parallel connection to improve the even harmonic, and the series capacitor adopts the reverse parallel connection to improve the odd harmonic and the even harmonic, so the two-stage capacitor array adopts the first reverse parallel connection and then the reverse series connection array layout to improve the harmonic nonlinearity, as shown in fig. 9b.
TABLE 1 capacitive nonlinear contrast
| Individual ones | In parallel with the same direction | Antiparallel connection | In co-directional series connection | Reverse series connection | |
| H2 | b 1 | b 1 | 0 | b 1 /2 | 0 |
| H3 | b 2 | b 2 | b 2 | b 2 /4 | b 2 /4 |
The implementation of fig. 8 results from this, i.e. on the basis of fig. 7a and 7b, the capacitance Ci1 becomes Ci1a and Ci1b in parallel, i=1, 2, … …, n, and antiparallel; the capacitor Ci2 becomes Ci2a and Ci2b connected in parallel and in anti-parallel, i=1, 2, … …, s, and then in anti-series connection at two ends of the corresponding radio frequency switch branch of the single pole multi throw switch to improve harmonic nonlinearity.
FIG. 10a is a graph showing the Q value comparison between the present invention and the conventional technology, wherein the diamond-shaped point connection is an invention simulation curve, and the square-shaped point connection is a conventional technology simulation curve; FIG. 10b is a graph showing a harmonic comparison between the present invention and the conventional technology, wherein the circular dotted real line is the second harmonic simulation curve of the present invention, the diamond dotted real line is the third harmonic simulation curve of the present invention, the triangle dotted real line is the fourth harmonic simulation curve of the present invention, the circular dotted virtual line is the second harmonic simulation curve of the conventional technology, the diamond dotted virtual line is the third harmonic simulation curve of the conventional technology, and the triangle dotted virtual line is the fourth harmonic simulation curve of the conventional technology. Simulation results show that the Q value of the capacitor array is improved by more than 8, and the harmonic wave is improved by 3-6dB.
In summary, the two-stage capacitor array series connection is adopted to increase the power voltage-resisting capability of the capacitor array, improve the power distribution of the capacitor array and the radio frequency switch, reduce the power capability requirement of the radio frequency switch, thereby reducing the lamination level, further reducing the on-resistance and improving the design of the quality factor.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, the scope of the invention is to be indicated by the appended claims.
Claims (9)
1. A programmable capacitor array structure, comprising:
the capacitor array comprises two-stage capacitor arrays distributed at two ends of the single-pole multi-throw switch, and corresponding capacitors of the two-stage capacitor arrays are reversely connected in series at two ends of the single-pole multi-throw switch and are used for providing different capacitors for each radio frequency switch branch of the single-pole multi-throw switch and combining the capacitors to obtain more different capacitance values;
the two-stage capacitor array is composed of two groups of capacitors C11-Cn 1 and C12-Cn 2, corresponding capacitors in the two groups of capacitors are reversely connected in series in the corresponding capacitor array branch through the corresponding radio frequency switch branch, and the reversely connected capacitors Ci1 and Ci2 and the radio frequency switch branch SWi of the single-pole multi-throw switch form a programmable capacitor array branch;
the single-pole multi-throw switch comprises a plurality of radio frequency switch branches, and is used for selectively connecting each capacitance branch of the capacitance array between a radio frequency input port and a radio frequency output port under the control of the control logic module so as to provide a radio frequency path;
and the control logic module is used for generating grid voltage and source-drain control signals required by switching on and off each radio frequency switch branch of the single-pole multi-throw switch under the control of a system control signal.
2. A programmable capacitor array structure as claimed in claim 1, wherein: the radio frequency input signal is connected to the positive/negative end of each capacitor of the first-stage capacitor arrays C11-Cn 1 from the radio frequency input port, the negative/positive end of each capacitor Ci1 is connected to the input end of the corresponding radio frequency switch branch SWi, each output end P2i of the radio frequency switch branch SWi is connected to the negative/positive end of the corresponding capacitor Ci2 of the second-stage capacitor arrays C12-Cn 2, and the positive/negative end of each capacitor of the second-stage capacitor arrays C12-Cn 2 is connected to the radio frequency output port.
3. A programmable capacitor array structure as claimed in claim 2, wherein: each radio frequency switch branch SWi comprises sequentially cascaded switch tubes M (i, ki) to M (i, 1), wherein the negative end of a capacitor Ci1 of a first-stage capacitor array is connected to the drain electrode of the switch tube M (i, ki), the source electrode of the switch tube M (i, ki) is connected to the drain electrode of the switch tube M (i, ki-1), …, and the source electrode of the switch tube M (i, 2) is connected to the drain electrode of the switch tube M (i, 1); the body electrode resistor Rb (i, j) is connected between one ends of the body electrode and the body electrode common resistor Rbc (i) of the switch tube M (i, j), the other end of the body electrode common resistor Rbc (i) is grounded, the drain-source resistor Rds (i, j) is connected between the drain electrode and the source electrode of the switch tube M (i, j), the grid resistor Rg (i, j) is connected between the grid electrode of the switch tube M (i, j) and one end of the grid electrode common resistor Rgc (i), the other end of the grid electrode common resistor Rgc (i) is connected with the grid voltage Vgi, the source electrode of the switch tube M (i, 1) is the output end P2i of the radio frequency switch branch SWi, the grid voltage Vgi is also connected to one end of the NAND gate NANDi, the switch array permission signal En is connected to the other end of the NAND gate NANDi, and the output end of the NAND gate NANDi is connected to the source electrode of the switch tube M (i, 1) through the isolation resistor Rc (i).
4. A programmable capacitor array structure as claimed in claim 3, wherein: the control logic module comprises a low dropout voltage regulator and a logic circuit, wherein the system control signal is connected to the input end of the logic circuit, the power supply is connected to the input end of the low dropout voltage regulator, the output end of the low dropout voltage regulator is connected to the power supply end of the logic circuit, and the output end of the logic circuit is connected to the grid voltage and the source-drain control signal input end of each radio frequency switch branch SWi of the single-pole multi-throw switch.
5. A programmable capacitor array structure as claimed in claim 3, wherein: the capacitors C11-Cn 1 of the first-stage capacitor array are arranged in power.
6. A programmable capacitor array structure as claimed in claim 3, wherein: the capacitors C12-Cn 2 of the second-stage capacitor array are arranged in power.
7. A programmable capacitor array structure as claimed in claim 3, wherein: the number of layers of each radio frequency switch branch SWi is different according to the weight of the capacitor array.
8. A programmable capacitor array structure as claimed in claim 1, wherein: the two-stage capacitor array series structure of the capacitor array adopts an array layout structure of firstly antiparallel connection and then antiparallel connection so as to improve harmonic nonlinearity.
9. The programmable capacitor array structure of claim 8, wherein: the capacitor Ci1 is connected in parallel by a capacitor Ci1a and a capacitor Ci1b in inverse parallel, the capacitor Ci2 is connected in parallel by a capacitor Ci2a and a capacitor Ci2b in inverse parallel, and then the capacitors Ci1 and Ci2b are connected in inverse series at two ends of a radio frequency switch branch corresponding to the single-pole multi-throw switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911038924.XA CN110808726B (en) | 2019-10-29 | 2019-10-29 | Programmable capacitor array structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911038924.XA CN110808726B (en) | 2019-10-29 | 2019-10-29 | Programmable capacitor array structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110808726A CN110808726A (en) | 2020-02-18 |
| CN110808726B true CN110808726B (en) | 2023-06-02 |
Family
ID=69489489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911038924.XA Active CN110808726B (en) | 2019-10-29 | 2019-10-29 | Programmable capacitor array structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110808726B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115632645B (en) * | 2022-12-08 | 2023-04-14 | 杭州地芯科技有限公司 | Radio frequency switch assembly, operational amplification module and radio frequency communication equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106209048A (en) * | 2016-08-22 | 2016-12-07 | 江苏卓胜微电子有限公司 | A kind of Combinatorial resolution radio-frequency (RF) switch |
| CN107947775A (en) * | 2017-12-13 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | A kind of radio-frequency switch circuit for improving shut-off capacitance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2546188B (en) * | 2015-09-02 | 2019-07-03 | Skyworks Solutions Inc | Contour tuning circuit |
| CN108377151B (en) * | 2018-03-22 | 2019-11-08 | 上海唯捷创芯电子技术有限公司 | A kind of multimode multi-frequency radio frequency front-end module, chip and communication terminal |
-
2019
- 2019-10-29 CN CN201911038924.XA patent/CN110808726B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106209048A (en) * | 2016-08-22 | 2016-12-07 | 江苏卓胜微电子有限公司 | A kind of Combinatorial resolution radio-frequency (RF) switch |
| CN107947775A (en) * | 2017-12-13 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | A kind of radio-frequency switch circuit for improving shut-off capacitance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110808726A (en) | 2020-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7688158B2 (en) | Digitally tuned, integrated baluns with enhanced linearity for multi-band radio applications | |
| KR101700503B1 (en) | System and method for driving a radio frequency switch | |
| CN108111155B (en) | Radio frequency switch circuit for improving nonlinearity | |
| US7649407B2 (en) | Digitally tuned, integrated RF filters with enhanced linearity for multi-band radio applications | |
| US7764142B2 (en) | Series connected bit phase shifter having first and second impedance adjusting circuits | |
| CN105322933A (en) | System and Method for a Radio Frequency Switch | |
| WO2017092682A1 (en) | Multipath switch circuit, chip and communication terminal | |
| CN104158524A (en) | System and Method for a Switchable Capacitance | |
| US10771096B2 (en) | Antenna impedance tuner | |
| CN110808726B (en) | Programmable capacitor array structure | |
| CN109150122A (en) | A kind of restructural distributed amplifier circuit | |
| CN110808727B (en) | Programmable capacitor array circuit | |
| CN113572467A (en) | Radio frequency switch circuit for improving harmonic wave | |
| CN106911326A (en) | Radio frequency switch capable of reducing bias control signal | |
| US10270405B2 (en) | Radio frequency switch apparatus with improved harmonic attenuation characteristics | |
| JP6757502B2 (en) | Bidirectional switch circuit and switch device | |
| US20160156315A1 (en) | Parallel resonant circuit | |
| CN116979942A (en) | Antenna tuning switch circuit | |
| KR100842306B1 (en) | Compact 180 degree phase shifter | |
| CN114826230B (en) | Ultra-wideband single-pole multi-throw radio frequency switch applying reconfigurable filter network | |
| CN114039584A (en) | High-voltage-resistant SOI CMOS radio frequency switch | |
| CN111742491B (en) | Switching circuit, high-frequency front-end circuit, and communication device | |
| CN110995191A (en) | Filter network capable of switching frequency and signal processing system formed by filter network | |
| CN215773071U (en) | Radio frequency switch circuit for improving harmonic wave | |
| JP3246624B2 (en) | FET switch circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |