CN110808291A - Multifunctional device - Google Patents
Multifunctional device Download PDFInfo
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- CN110808291A CN110808291A CN201911026067.1A CN201911026067A CN110808291A CN 110808291 A CN110808291 A CN 110808291A CN 201911026067 A CN201911026067 A CN 201911026067A CN 110808291 A CN110808291 A CN 110808291A
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- 239000010410 layer Substances 0.000 claims abstract description 49
- 239000002346 layers by function Substances 0.000 claims abstract description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000009471 action Effects 0.000 claims abstract description 10
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- 239000005751 Copper oxide Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 5
- 239000011888 foil Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- LVYZJEPLMYTTGH-UHFFFAOYSA-H dialuminum chloride pentahydroxide dihydrate Chemical compound [Cl-].[Al+3].[OH-].[OH-].[Al+3].[OH-].[OH-].[OH-].O.O LVYZJEPLMYTTGH-UHFFFAOYSA-H 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
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Abstract
The invention relates to the field of microelectronic technology and electronic components and discloses a multifunctional device. The multifunctional device includes: the double-layer oxide film functional layer comprises an upper electrode, a lower electrode and a double-layer oxide film functional layer positioned between the upper electrode and the lower electrode; the upper electrode of the structure is a metal layer which is easily oxidized into metal ions under the action of an electric field, the middle functional layer is a double-layer stacked layer which is formed by an oxide film and a titanium oxide film and can effectively transmit the metal ions, and the lower electrode is a metal layer which can form good ohmic contact with the titanium oxide film. The multifunctional device provided by the invention has the characteristics of both diode and storage, breaks through the characteristic that only a single function can be realized by one traditional electronic component, realizes the multi-functionality of the single component, can effectively reduce the product cost, and has a great application prospect in the fields of microelectronic technology and electronic components.
Description
Technical Field
The invention belongs to the field of microelectronic technology and electronic components, and particularly relates to a multifunctional device with a diode and a stored multifunctional oxide thin film device.
Background
Basic electronic devices such as diodes, memories, etc. are common and indispensable electronic devices in human life. The diode is one of the most commonly used electronic components, and has the biggest characteristic of having one-way conductivity, namely, under the action of forward voltage, the on-resistance is very small; and the on-resistance is extremely large or infinite under the reverse voltage. Because the diode has the characteristics, current can only flow in one direction of the diode, the diode is generally used in circuits such as rectification, isolation, voltage stabilization, polarity protection, coding control, frequency modulation and noise suppression, and the diode has wide application in life electronics and can be used in almost all electronic circuits.
The memory is a device unit capable of storing binary information, plays an important role in the semiconductor industry, has huge market demand, and is an important component of products of various semiconductor enterprises and industries in China and China. Since the 21 st century, with the increasing popularity of portable personal devices such as mobile phones, notebook computers, etc., the high-speed development of computer technology, internet of things technology, 5G technology, and new and popular electronic products, memories have played an increasingly important role in the semiconductor industry.
In recent years, with the progress of digital high-tech technology, the development of the era and the continuous improvement of the demand of people for multi-functionalization of electronic products, electronic components have a diversified development trend. Therefore, versatility is one of the main targets sought for electronic components. Compared with the electronic component which can only realize single function, if one component has multiple functions, the application range of the component can be expanded.
Disclosure of Invention
The multifunctional device has the advantages of simple structure, simple manufacturing process and low manufacturing cost, has the characteristics of diodes and storage, and has a wide application prospect in the field of electronic components.
The invention adopts the following technical scheme:
a multifunctional device comprises a substrate, an upper electrode and a lower electrode which are arranged on the substrate, wherein the thicknesses of the upper electrode and the lower electrode are both 10-500nm, a middle functional layer is arranged between the upper electrode and the lower electrode, the middle functional layer is composed of a titanium oxide thin film layer and an oxide thin film layer, the oxide thin film layer is one of aluminum oxide, silicon oxide, hafnium oxide, zirconium oxide, tantalum oxide, zinc oxide, tungsten oxide and copper oxide, and the thicknesses of the titanium oxide thin film layer and the oxide thin film layer are both 5-100 nm.
The substrate is one of silicon dioxide, doped silicon dioxide, glass, plastic, metal foil, paper substrate and biological composite film substrate.
The material of the upper electrode is one of metal ions Ag, Cu or Ni which can be easily oxidized under the action of an electric field.
The lower electrode is made of one of Ti or W which can form good ohmic contact with the titanium oxide film.
The middle functional layer is formed by a double-layer film formed by stacking an oxide film layer and a titanium oxide film layer, wherein the oxide film layer can effectively transmit Ag, Cu or Ni metal ions under the action of an electric field.
The multifunctional device provided by the invention has the advantages of simple structure and manufacturing process, compatibility of the adopted materials and a standard semiconductor process, and low manufacturing cost. According to the invention, the active metal Ag, Cu or Ni is used as an upper electrode, after a forward voltage is applied, the active metal Ag, Cu or Ni is subjected to an oxidation reaction to form movable metal ions, the Ag, Cu or Ni metal ions can move in the oxide thin film layer under the action of an electric field, and when the ions move to the surface of the titanium oxide thin film layer, the ions are difficult to move in the titanium oxide thin film layer because the Ag, Cu or Ni and the titanium oxide thin film layer form Schottky contact, so that the ions are subjected to a reduction reaction to form atoms on the surface of the titanium oxide thin film layer. As the redox reaction proceeds, a conductive channel of metal can be formed in the oxide thin film layer, and the device becomes small with respect to the initial state, and a basic memory state can be realized. Further, since the conductive path made of Ag, Cu, or Ni metal forms schottky contact with the titanium oxide thin film layer, and Ti or W constituting the lower electrode forms ohmic contact with the titanium oxide thin film layer, the characteristics of the diode can be realized. Therefore, the multifunctional device provided by the invention has the characteristics of both diode and storage, breaks through the characteristic that only a single function can be realized by one traditional electronic component, effectively reduces the product cost while realizing the multi-functionality of the single device, and has a great application prospect in the fields of microelectronic technology and electronic components.
Drawings
FIG. 1 is a schematic structural view of a multifunction device of the present invention;
fig. 2 is a schematic view of a current-voltage characteristic curve of a multifunctional device having both diode and memory characteristics according to embodiment 2 of the present invention.
Detailed Description
In order that the objects, aspects and advantages of the present invention will become more apparent, the present invention will be described in detail with reference to the accompanying drawings in conjunction with specific embodiments. The drawings and their description provided herein are for purposes of illustrating the embodiments of the invention and are not intended to limit the scope of the invention. In the drawings of the embodiments of the present invention, the representation is only schematic and does not strictly reflect the true dimensional scale of the device.
As shown in fig. 1, a multifunctional device includes a substrate 101 and an upper electrode 104 and a lower electrode 102 on the substrate 101, wherein the material of the upper electrode 104 is one of Ag, Cu, or Ni. The lower electrode 102 is made of one of Ti or W, and the thicknesses of the upper electrode 104 and the lower electrode 102 are both 10nm-500 nm. The substrate 101 is one of silicon dioxide, doped silicon dioxide, glass, plastics, metal foil, paper substrate and biological composite film substrate, and the thickness of the substrate 101 is 1um-1 mm. An intermediate functional layer is arranged between the upper electrode 104 and the lower electrode 102, and the intermediate functional layer is formed by a double-layer film formed by stacking a titanium oxide film layer 103a and an oxide film layer 103b capable of effectively transmitting Ag, Cu or Ni metal ions under the action of an electric field, wherein the oxide film layer 103b forming the intermediate functional layer is one of aluminum oxide, silicon oxide, hafnium oxide, zirconium oxide, tantalum oxide, zinc oxide, tungsten oxide and copper oxide. The thickness of the titanium oxide thin film layer 103a and the thickness of the oxide thin film layer 103b constituting the intermediate functional layer are both 5nm to 100 nm.
Example 1
A multifunctional device comprises a substrate 101 and an upper electrode 104 and a lower electrode 102 on the substrate 101, wherein the material of the upper electrode 104 is one of Ag, Cu or Ni. The material of the lower electrode 102 is one of Ti or W, and the thickness of the upper electrode 104 and the lower electrode 102 is 500 nm. The substrate 101 is one of silicon dioxide, doped silicon dioxide, glass, plastics, metal foil, paper substrate and biological composite film substrate, and the thickness of the substrate 101 is 1 mm. An intermediate functional layer is arranged between the upper electrode 104 and the lower electrode 102, and the intermediate functional layer is formed by a double-layer film formed by stacking a titanium oxide film layer 103a and an oxide film layer 103b capable of effectively transmitting Ag, Cu or Ni metal ions under the action of an electric field, wherein the oxide film layer 103b forming the intermediate functional layer is one of aluminum oxide, silicon oxide, hafnium oxide, zirconium oxide, tantalum oxide, zinc oxide, tungsten oxide and copper oxide. The thickness of the titanium oxide thin film layer 103a and the oxide thin film layer 103b constituting the intermediate functional layer are both 100 nm.
Example 2
A multifunctional device comprises a substrate 101 and an upper electrode 104 and a lower electrode 102 on the substrate 101, wherein the material of the upper electrode 104 is Ag. The material of the lower electrode 102 is Ti, and the thickness of the upper electrode 104 and the lower electrode 102 are both 10 nm. The substrate 101 is one of silicon dioxide, doped silicon dioxide, glass, plastics, metal foil, paper substrate and biological composite film substrate, and the thickness of the substrate 101 is 1 um. An intermediate functional layer is arranged between the upper electrode 104 and the lower electrode 102, and the intermediate functional layer is formed by a double-layer film formed by stacking a titanium oxide film layer 103a and an oxide film layer 103b capable of effectively transmitting Ag metal ions under the action of an electric field, wherein the oxide film layer 103b forming the intermediate functional layer is one of aluminum oxide, silicon oxide, hafnium oxide, zirconium oxide, tantalum oxide, zinc oxide, tungsten oxide and copper oxide. The thickness of the titanium oxide thin film layer 103a and the thickness of the oxide thin film layer 103b constituting the intermediate functional layer are both 5 nm.
FIG. 2 is a schematic view of a current-voltage characteristic curve of a multifunctional device according to an embodiment of the present invention, in which Ag is used as an upper electrode, Ti is used as a lower electrode, and a dual-layer structure of oxide and zirconia is used as a functional layer; as shown in FIG. 2, the device manufactured by the invention has good diode rectification characteristics, and the rectification ratio is as high as 108 under the action of +/-2V voltage. In addition, in the positive voltage scanning mode, the resistance of the device is obviously changed in the process of scanning from 0V to 3V and from 3V to 0V, the change rate of the resistance value can reach 103 under the reading voltage of 1V, and the different resistance value changes can be respectively defined as '0' and '1' to realize the function of storing data.
Therefore, the device provided by the invention has the characteristics of both the diode and the memory, and the multifunctional device provided by the invention has the advantages of simple structure and manufacturing process and low manufacturing cost, thereby having industrial value.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A multifunction device comprising a substrate and an upper electrode and a lower electrode on the substrate, characterized in that: the thickness of the upper electrode (104) and the thickness of the lower electrode (102) are both 10-500nm, a middle functional layer (103) is arranged between the upper electrode (104) and the lower electrode (102), the middle functional layer is composed of a titanium oxide thin film layer (103 a) and an oxide thin film layer (103 b), the oxide thin film layer (103 b) is one of aluminum oxide, silicon oxide, hafnium oxide, zirconium oxide, tantalum oxide, zinc oxide, tungsten oxide and copper oxide, and the thickness of the titanium oxide thin film layer (103 a) and the thickness of the oxide thin film layer (103 b) are both 5-100 nm.
2. A multifunctional device according to claim 2, characterized in that: the substrate (101) is one of silicon dioxide, doped silicon dioxide, glass, plastic, metal foil, paper substrate and biological composite film substrate.
3. A multifunctional device as claimed in claim 1 or 2, characterized in that: the material of the upper electrode (104) is one of Ag, Cu or Ni.
4. A multifunctional device according to claim 3, characterized in that: the material of the lower electrode (102) is one of Ti or W.
5. A multifunctional device according to claim 1 or 4, characterized in that: the intermediate functional layer (103) is formed by a double-layer film formed by stacking an oxide film layer (103 b) and a titanium oxide film layer (103 a) which can effectively transmit Ag, Cu or Ni metal ions under the action of an electric field.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911026067.1A CN110808291A (en) | 2019-10-25 | 2019-10-25 | Multifunctional device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911026067.1A CN110808291A (en) | 2019-10-25 | 2019-10-25 | Multifunctional device |
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| CN110808291A true CN110808291A (en) | 2020-02-18 |
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2019
- 2019-10-25 CN CN201911026067.1A patent/CN110808291A/en active Pending
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