CN110806674A - Laser light source module and projection display system - Google Patents

Laser light source module and projection display system Download PDF

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Publication number
CN110806674A
CN110806674A CN201810887278.3A CN201810887278A CN110806674A CN 110806674 A CN110806674 A CN 110806674A CN 201810887278 A CN201810887278 A CN 201810887278A CN 110806674 A CN110806674 A CN 110806674A
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CN
China
Prior art keywords
laser
array
light source
source module
stepped
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Pending
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CN201810887278.3A
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Chinese (zh)
Inventor
杨兴
许礼强
王瑞
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Shenzhen TCL High-Tech Development Co Ltd
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Shenzhen TCL High-Tech Development Co Ltd
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Priority to CN201810887278.3A priority Critical patent/CN110806674A/en
Publication of CN110806674A publication Critical patent/CN110806674A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2066—Reflectors in illumination beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a laser light source module and a projection display system, wherein the laser light source module comprises: a semiconductor laser array encapsulated on the heat-dissipating substrate; the step type reflecting mirror array is used for reflecting the laser beams emitted by the semiconductor laser array; an output surface disposed in the output direction of the reflected light; the semiconductor lasers in the semiconductor laser array are arranged in a staggered mode at preset intervals; the stepped reflectors in the stepped reflector array correspond to the semiconductor lasers and are arranged along the laser emitting direction of the semiconductor laser array in a staggered mode, so that laser beams emitted by the semiconductor lasers are reflected by the corresponding stepped reflectors for the first time and then output light spots to the output surface. The laser light source module only needs one-time reflection, reduces the line spacing and the column spacing between the light beams, obtains higher laser power density while ensuring smaller volume, and avoids energy loss and process complexity caused by secondary mirror reflection.

Description

Laser light source module and projection display system
Technical Field
The invention relates to the technical field of laser display, in particular to a laser light source module and a projection display system.
Background
In recent years, laser display technology has been widely used in various fields because of its advantages such as high brightness, wide color gamut, high color reproducibility, long life, energy saving, and environmental protection. In the laser display technology, semiconductor lasers are often used as laser light sources because of their advantages of high brightness, small size, long lifetime, low cost, high reliability, etc. However, due to the limitations of semiconductor technology level and the characteristics of the materials, the output optical power of a single semiconductor laser is low, and is mostly between hundreds of milliwatts and several watts. In order to meet the requirements of laser display products on high-power laser light sources, in practical application, multiple semiconductor lasers are often arranged in an array, and high-power laser output is realized by beam combination.
Laser light source's among the prior art technical scheme is mostly according to array package on a module with many semiconductor laser, then adopt and be 90 with laser propagation direction and carry out the dislocation and place the module, utilize the plane reflector strip to the beam deflection of one of them module, carry out the beam shrinkage through the beam shrinkage system at last, reach the purpose that promotes laser power density, but this scheme does not consider semiconductor laser's beam characteristic, only simple through arranging promotion laser power density in space, consequently, there is great clearance between the facula, power density is low, and the volume is great. Although the technical scheme of compressing the row spacing and the column spacing of a light beam array by considering the light beam characteristics of a semiconductor laser and adopting two groups of orthogonal reflector strips also exists in the prior art, and higher laser power density is realized, the scheme needs two times of reflection, so that higher energy loss is caused, and the difficulty of a later-stage assembly and adjustment process is increased by the two groups of orthogonal reflector strips.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The present invention provides a laser light source module and a projection display system, which aim to solve the problems of the prior art, such as large gap between laser light source spots, large overall size, and high energy loss due to the need of twice reflection to reduce the size of the laser output spot.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the utility model provides a laser light source module, wherein, laser light source module includes: a semiconductor laser array encapsulated on the heat-dissipating substrate;
the stepped reflecting mirror array is used for reflecting the laser beams emitted by the semiconductor laser array;
an output surface disposed in the output direction of the reflected light;
the semiconductor lasers in the semiconductor laser array are arranged at preset intervals in a staggered mode; the stepped reflectors in the stepped reflector array correspond to the semiconductor lasers and are arranged along the laser emitting direction of the semiconductor laser array at intervals in a staggered mode, so that laser beams emitted by the semiconductor lasers are reflected by the corresponding stepped reflectors for the first time and then output light spots to the output surface.
In the laser light source module, each step reflector is provided with a reflecting surface; the reflecting surface is a polished metal surface or a glass reflecting mirror surface plated with a dielectric film.
The laser light source module is characterized in that the semiconductor laser arrays are arranged into n groups, and the semiconductor lasers in each group are arranged in a rectangular array;
the groups in the semiconductor laser array are arranged in a staggered mode at preset intervals and are sequentially arranged along the long axis direction of the oval light spots of the semiconductor lasers after the semiconductor lasers are collimated by the collimating lens.
The stepped reflector array is divided into n groups, and corresponds to the semiconductor laser array; and the groups in the stepped reflector array are arranged at intervals along the laser emitting direction of the semiconductor laser array in a staggered manner.
In the laser light source module, the dislocation gap between groups in the semiconductor laser array is delta y/n; Δ y is the minor axis direction gap of the elliptical spots in each group, and n is the number of groups.
The laser light source module, wherein, each stepped reflector in the stepped reflector array includes first step and second step, the height of first step and second step is greater than the width of the oval facula of semiconductor laser after the collimating mirror collimation in major axis direction.
The laser light source module is characterized in that the semiconductor laser arrays are arranged into m large groups, and m are arranged in each large group1The small groups are arranged in a staggered mode at preset intervals;
and the large groups in the semiconductor laser array are sequentially arranged along the long axis direction of the elliptic light spots of the semiconductor lasers after the semiconductor lasers are collimated by the collimating lens.
The laser light source module, wherein the stepped reflector array is divided into m groups, and m are arranged in each large group1The small groups are arranged in a staggered mode at intervals and correspond to the semiconductor lasers; each step type reflector only has one step, and the step heights of the step type reflectors between the large groups are different;
and the large group in the stepped reflector array are arranged along the laser emitting direction of the semiconductor laser array.
The laser light source module is characterized in that the semiconductor laser arrays are arranged into k large groups, and k is arranged in each large group1The small groups are arranged in a staggered mode at preset intervals;
the large groups of the semiconductor laser arrays are sequentially arranged along the long axis direction of the elliptic light spots of the semiconductor lasers after being collimated by the collimating lens;
the stepped mirror array is divided into k large groups, and k is arranged in each large group1A subgroup, each of the step reflectors comprises a first step anda second step;
the large groups of the stepped reflector arrays are arranged in a staggered mode along the height direction, so that the heights of the large groups of the stepped reflector arrays are different. .
A projection display system comprises the laser light source module.
The invention has the beneficial effects that: the laser beam emitted by each semiconductor laser in the laser light source module only needs to be reflected once, so that the line spacing and the column spacing between the light beams are reduced, the smaller volume is ensured, the higher laser power density is obtained, and the energy loss and the process complexity caused by secondary specular reflection are avoided.
Drawings
Fig. 1 is a schematic diagram of a laser light source module according to a first preferred embodiment of the invention.
Fig. 2 is a schematic diagram of a laser light source module according to a second preferred embodiment of the invention.
Fig. 3 is a schematic three-dimensional structure diagram of a laser light source module according to a third preferred embodiment of the invention.
Fig. 4 is a three-dimensional schematic view of a step reflector in a third preferred embodiment of a laser light source module according to the invention.
Fig. 5 is a schematic diagram of a laser light source module according to a third preferred embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to solve the problems that the volume of the laser light source technology in the prior art is too large, or the loss of higher energy is caused by the fact that the laser light source needs to be reflected twice when higher laser power density is obtained, the invention provides a laser light source module, which comprises: a semiconductor laser array encapsulated on the heat-dissipating substrate; the stepped reflecting mirror array is used for reflecting the laser beams emitted by the semiconductor laser array; an output surface disposed in the output direction of the reflected light; the semiconductor lasers in the semiconductor laser array are arranged at preset intervals in a staggered mode; the stepped reflectors in the stepped reflector array correspond to the semiconductor lasers and are arranged along the laser emitting direction of the semiconductor laser array in a staggered mode, so that laser beams emitted by the semiconductor lasers are reflected by the corresponding stepped reflectors for the first time and then output light spots to the output surface.
Preferably, each step type reflector in the invention is provided with a reflecting surface; the reflecting surface is a polished metal surface or a glass reflecting mirror surface plated with a dielectric film.
In the laser light source module of the invention, the semiconductor laser array is arranged in a staggered mode, and the stepped reflecting mirror array is also arranged in a staggered mode, so that the semiconductor laser and the stepped reflecting mirror correspond to each other. Laser beams emitted by the semiconductor laser can be reflected by the corresponding stepped reflectors for the first time and then light spots can be output to the output surface, and energy loss caused by secondary reflection can be avoided. In addition, the semiconductor laser and the stepped reflector are arranged in a staggered mode, and the size of the laser light source module is effectively reduced.
Example one
As shown in fig. 1, in the present embodiment, all the semiconductor lasers are packaged on the same heat dissipation substrate, and the semiconductor laser array 100 is arranged into 3 groups, one group for each of 4 semiconductor lasers 110. Since the collimator does not have a cover plate in the direction of the laser beam emitted by the semiconductor laser 110, the distribution of the light spots collimated by the collimator can be regarded as the distribution of the semiconductor laser 110. Therefore, as can be seen from the distribution of the elliptical spots of the semiconductor laser 110 in fig. 1 after being collimated by the collimating lens (not shown in the figure), as can be seen from fig. 1, the line spacing Δ x (the distance between two adjacent semiconductor lasers 110) and the column spacing Δ y (the short-axis direction gap between two adjacent elliptical spots) of the spots of the original laser source are both relatively large, so that it is difficult to obtain a relatively good laser density, and the display effect of the laser source is affected.
In order to reduce the row spacing Δ x and the column spacing Δ y of the light spots, in this embodiment, the semiconductor lasers 110 in each group are arranged in a rectangular array, the groups in the semiconductor laser array 100 are arranged in a staggered manner at preset intervals, and the arrangement direction is sequentially arranged along the long axis direction of the elliptical light spots, so that all the elliptical light spots are ensured to be parallel to each other, and meanwhile, the long axis of the elliptical light spots is parallel to one side line of the rectangular array.
Specifically, LD01-LD12 in fig. 1 is a semiconductor laser 110, wherein LD01, LD02, LD07, and LD08 are in a group and form a rectangular array; the LD03, the LD04, the LD09 and the LD10 are in a group and form a rectangular array; LD05, LD06, LD11 and LD12 are in a group and form a rectangular array. With a certain spacing deltay between groups，Offset setting (in xy plane), Δ y，And = Δ y/n, where Δ y is the minor axis gap of the elliptical spots in each group and n is the number of groups.
Further, the stepped reflector array 200 in the present embodiment is also divided into 3 groups, and each 2 stepped reflectors 210 constitute one group. The stepped reflectors 210 in this embodiment each have a first step and a second step, each of which is a reflecting surface, so that the stepped reflector array 200 in this embodiment includes 12 reflecting surfaces (M01-M12 in fig. 1). In the present embodiment, the stepped reflector array 200 is also arranged in a staggered manner from group to group, and preferably, the staggered gap between groups in the stepped reflector array 200 is also Δ y，In addition, the heights of the first step and the second step in this embodiment are greater than the width of the elliptical spot of the semiconductor laser 110 collimated by the collimator lens in the major axis direction, so as to ensure that all laser beams can be properly reflected by the reflecting surface.
Since each step reflector 210 in the present embodiment has two reflecting surfaces, each step reflector 210 corresponds to two half partsA conductive laser 110. Specifically, laser beams emitted from the LD01 and the LD02 are reflected by two reflection surfaces, M01 and M02, respectively; laser beams emitted from the LD03 and the LD04 are reflected by two reflecting surfaces, M03 and M04, respectively; laser beams emitted from the LD05 and the LD06 are reflected by two reflecting surfaces, M05 and M06, respectively; laser beams emitted from the LD07 and the LD08 are reflected by two reflecting surfaces, M07 and M08, respectively; laser beams emitted from the LD09 and the LD10 are reflected by two reflecting surfaces, M09 and M10, respectively; laser beams emitted from the LD11 and the LD12 are reflected by two reflection surfaces, M11 and M12, respectively. In this embodiment, each reflecting surface forms an angle of 45 ° with the emitting direction of the semiconductor laser 210, all the laser beams output light spots to the output surface 300 after being reflected once, and as viewed from the light spot distribution of the output surface in fig. 1, the line spacing Δ x of the light spots of the laser beams reflected by the stepped reflecting mirror array 200，And column pitch Δ y，The row spacing Δ x and the column spacing Δ y are significantly reduced compared to the previous ones, so that a higher laser density is obtained. In addition, because all laser beams in the embodiment are reflected once, the energy loss is effectively reduced, the optical efficiency is improved, and meanwhile, the problems of complex later-stage assembly and adjustment process and low efficiency caused by multiple reflections are solved. In addition, no matter the laser light source module in the embodiment is the semiconductor laser 110 and the stepped reflector 210, the laser light source module is arranged in a staggered manner, so that the overall volume of the laser light source module is effectively reduced.
Example two
As shown in fig. 2, in the present embodiment, the semiconductor laser arrays 100 are arranged in 2 large groups, each of which is divided into 3 small groups, each of which has 2 semiconductor lasers 110, and thus 12 semiconductor laser arrays 100 are arranged in the present embodiment. In the semiconductor laser array in this embodiment, the large groups are sequentially arranged along the long axis direction of the elliptical light spots of the semiconductor laser after being collimated by the collimating lens, and are not arranged in a staggered manner. And the subgroups are separated by a certain interval delta y，The offset arrangement is shown in particular in fig. 2.
Correspondingly, the stepped mirror array 200 is also arranged into 2 groups, each group is divided into 3 groups, each group has 12 stepped mirrors 210, and each stepped mirror 210 has only one step (reflecting surface), so that the stepped mirrors 210 correspond to the semiconductor lasers 110 one to one. The stepped mirror array 200 in this embodiment is arranged between the large groups along the laser emission direction of the semiconductor laser array 100. In order to better output laser beams, the heights of the steps (i.e., the reflecting surfaces) of the step reflectors 210 between the large groups of the step reflector array 200 are different, so that the laser beams emitted by different semiconductor lasers 110 can be effectively prevented from being overlapped after being reflected, and the output of light spots is prevented from being influenced.
Similarly, from the output surface spot distribution in FIG. 2, the line spacing Δ x of the spots of the laser beam reflected by the stepped mirror array 200，And column pitch Δ y，The row spacing Δ x and the column spacing Δ y are significantly reduced compared to the previous ones, so that a higher laser density is obtained. In addition, because all laser beams in the embodiment are reflected once, the energy loss is effectively reduced, the optical efficiency is improved, and meanwhile, the problems of complex later-stage assembly and adjustment process and low efficiency caused by multiple reflections are solved. In addition, no matter the laser light source module in the embodiment is the semiconductor laser 110 and the stepped reflector 210, the laser light source module is arranged in a staggered manner, so that the overall volume of the laser light source module is effectively reduced.
EXAMPLE III
As shown in fig. 3 to 5, in the present embodiment, the semiconductor laser arrays 100 are arranged into 3 large groups, each of which is divided into 3 small groups, each of which is provided with 8 semiconductor lasers 110, and thus 72 semiconductor lasers 110 are provided in total in the present embodiment. As can be seen from fig. 5, in the semiconductor laser array 100 in this embodiment, the large groups are sequentially arranged along the major axis direction of the elliptical light spots of the semiconductor lasers after being collimated by the collimator, and are not arranged in a staggered manner. And the subgroups are separated by a certain interval delta y，And (5) dislocation setting.
Correspondingly, the stepped mirror arrays 200 in the present embodiment are also provided with 3 large groups, each large group is divided into 3 small groups, and each small group is provided with 4 stepped mirror arrays 210. Since all the stepped mirrors 210 in the present embodiment include two steps (i.e., two reflecting surfaces), each stepped mirror 210 corresponds to two semiconductor lasers 110. In order to better ensure the output of the laser beam and ensure that the volume of the laser light source is basically unchanged, the overall height of the step mirrors 210 in the step mirror array 200 is set to be different from one group to another group, as shown in fig. 4, and the height of each group is not consistent. The laser light source can effectively avoid the laser beams emitted by different semiconductor lasers 110 from overlapping after being reflected to influence the output of light spots, and the whole structure of the laser light source of the embodiment can be more compact.
Similarly, from the output surface spot distribution in fig. 5, the row pitch and the column pitch of the spots of the laser beam reflected by the stepped mirror array 200 are significantly reduced, thereby achieving higher laser density. In addition, because all laser beams in the embodiment are reflected once, the energy loss is effectively reduced, the optical efficiency is improved, and meanwhile, the problems of complex later-stage assembly and adjustment process and low efficiency caused by multiple reflections are solved. In addition, no matter the laser light source module in the embodiment is the semiconductor laser 110 and the stepped reflector 210, the laser light source module is arranged in a staggered manner, so that the overall volume of the laser light source module is effectively reduced.
It should be noted that the semiconductor laser array in the invention may be a single-color semiconductor laser array, or may also be a two-primary-color or three-primary-color semiconductor laser array arranged in a certain proportion, thereby forming a three-primary-color laser light source module.
Based on the above embodiment, the present invention further provides a projection display system, which includes the laser light source module in the above embodiment. The laser light source module in the projection display system only needs one-time reflection, reduces the line spacing and the column spacing between the light beams, obtains higher laser power density under the condition of ensuring that the volume is basically unchanged, and avoids energy loss caused by secondary mirror reflection.
In summary, the present invention provides a laser light source module and a projection display system, wherein the laser light source module includes: a semiconductor laser array encapsulated on the heat-dissipating substrate; the step type reflecting mirror array is used for reflecting the laser beams emitted by the semiconductor laser array; an output surface disposed in the output direction of the reflected light; the semiconductor lasers in the semiconductor laser array are arranged in a staggered mode at preset intervals; the stepped reflectors in the stepped reflector array correspond to the semiconductor lasers and are arranged along the laser emitting direction of the semiconductor laser array in a staggered mode, so that laser beams emitted by the semiconductor lasers are reflected by the corresponding stepped reflectors for the first time and then output light spots to the output surface. The laser light source module only needs one-time reflection, reduces the line spacing and the column spacing between the light beams, obtains higher laser power density under the condition of ensuring that the volume is basically unchanged, and avoids energy loss caused by secondary mirror reflection.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (10)

1. The utility model provides a laser light source module which characterized in that, laser light source module includes: a semiconductor laser array encapsulated on the heat-dissipating substrate;
the stepped reflecting mirror array is used for reflecting the laser beams emitted by the semiconductor laser array;
an output surface disposed in the output direction of the reflected light;
the semiconductor lasers in the semiconductor laser array are arranged at preset intervals in a staggered mode; the stepped reflectors in the stepped reflector array correspond to the semiconductor lasers and are arranged along the laser emitting direction of the semiconductor laser array at intervals in a staggered mode, so that laser beams emitted by the semiconductor lasers are reflected by the corresponding stepped reflectors for the first time and then output light spots to the output surface.
2. The laser light source module as claimed in claim 1, wherein each step reflector is provided with a reflecting surface; the reflecting surface is a polished metal surface or a glass reflecting mirror surface plated with a dielectric film.
3. The laser light source module as claimed in claim 2, wherein the semiconductor laser arrays are arranged in n groups, and the semiconductor lasers in each group are arranged in a rectangular array;
the groups in the semiconductor laser array are arranged in a staggered mode at preset intervals and are sequentially arranged along the long axis direction of the oval light spots of the semiconductor lasers after the semiconductor lasers are collimated by the collimating lens.
4. The laser light source module as claimed in claim 3, wherein the stepped reflector array is divided into n groups, and the stepped reflector array corresponds to the semiconductor laser array; and the groups in the stepped reflector array are arranged at intervals along the laser emitting direction of the semiconductor laser array in a staggered manner.
5. The laser light source module as claimed in claim 4, wherein the misalignment gap between groups in the semiconductor laser array is Δ y/n; Δ y is the minor axis direction gap of the elliptical spots in each group, and n is the number of groups.
6. The laser light source module as claimed in claim 5, wherein each of the stepped mirrors in the stepped mirror array includes a first step and a second step, and the heights of the first step and the second step are greater than the width of the elliptical light spot of the semiconductor laser collimated by the collimating mirror in the major axis direction.
7. The laser light source module as claimed in claim 2, wherein the light source module is disposed on the substrateThe semiconductor laser arrays are arranged in m large groups, m in each large group1The small groups are arranged in a staggered mode at preset intervals;
and the large groups in the semiconductor laser array are sequentially arranged along the long axis direction of the elliptic light spots of the semiconductor lasers after the semiconductor lasers are collimated by the collimating lens.
8. The laser light source module as claimed in claim 7, wherein the stepped mirror array is divided into m groups, and m in each large group1The small groups are arranged in a staggered mode at intervals and correspond to the semiconductor lasers; each step type reflector only has one step, and the step heights of the step type reflectors between the large groups are different;
and the large group in the stepped reflector array are arranged along the laser emitting direction of the semiconductor laser array.
9. The laser light source module as claimed in claim 2, wherein the semiconductor laser arrays are arranged in k large groups, k in each large group1The small groups are arranged in a staggered mode at preset intervals;
the large groups of the semiconductor laser arrays are sequentially arranged along the long axis direction of the elliptic light spots of the semiconductor lasers after being collimated by the collimating lens;
the stepped mirror array is divided into k large groups, and k is arranged in each large group1The step type reflectors in each group comprise a first step and a second step;
the large groups of the stepped reflector arrays are arranged in a staggered mode along the height direction, so that the heights of the large groups of the stepped reflector arrays are different.
10. A projection display system, comprising the laser light source module according to any one of claims 1 to 9.
CN201810887278.3A 2018-08-06 2018-08-06 Laser light source module and projection display system Pending CN110806674A (en)

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CN201810887278.3A CN110806674A (en) 2018-08-06 2018-08-06 Laser light source module and projection display system

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Application Number Priority Date Filing Date Title
CN201810887278.3A CN110806674A (en) 2018-08-06 2018-08-06 Laser light source module and projection display system

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060244922A1 (en) * 2005-05-02 2006-11-02 Asia Optical Co., Inc. Optical projecting system
CN103048792A (en) * 2011-10-11 2013-04-17 深圳市光峰光电技术有限公司 Light source system and laser light source
CN104769497A (en) * 2012-11-07 2015-07-08 松下知识产权经营株式会社 Light source and image projection apparatus
CN204807813U (en) * 2015-06-17 2015-11-25 南京先进激光技术研究院 Three -dimensional ladder mirror
CN205374887U (en) * 2016-01-27 2016-07-06 成都成亿光电科技有限公司 Laser plastic compressor arrangement
CN207301513U (en) * 2017-09-19 2018-05-01 北京速镭视激光科技有限公司 A kind of three-dimensional echelon prism laser beam compression device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060244922A1 (en) * 2005-05-02 2006-11-02 Asia Optical Co., Inc. Optical projecting system
CN103048792A (en) * 2011-10-11 2013-04-17 深圳市光峰光电技术有限公司 Light source system and laser light source
CN104769497A (en) * 2012-11-07 2015-07-08 松下知识产权经营株式会社 Light source and image projection apparatus
CN204807813U (en) * 2015-06-17 2015-11-25 南京先进激光技术研究院 Three -dimensional ladder mirror
CN205374887U (en) * 2016-01-27 2016-07-06 成都成亿光电科技有限公司 Laser plastic compressor arrangement
CN207301513U (en) * 2017-09-19 2018-05-01 北京速镭视激光科技有限公司 A kind of three-dimensional echelon prism laser beam compression device

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