CN110798171B - Hybrid broadband high-precision phase shifter integrated circuit - Google Patents

Hybrid broadband high-precision phase shifter integrated circuit Download PDF

Info

Publication number
CN110798171B
CN110798171B CN201910978618.8A CN201910978618A CN110798171B CN 110798171 B CN110798171 B CN 110798171B CN 201910978618 A CN201910978618 A CN 201910978618A CN 110798171 B CN110798171 B CN 110798171B
Authority
CN
China
Prior art keywords
transistor
terminal
capacitor
port
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910978618.8A
Other languages
Chinese (zh)
Other versions
CN110798171A (en
Inventor
徐志伟
王绍刚
李娜雨
厉敏
高会言
张梓江
宋春毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yantai Xin Yang Ju Array Microelectronics Co ltd
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN201910978618.8A priority Critical patent/CN110798171B/en
Publication of CN110798171A publication Critical patent/CN110798171A/en
Application granted granted Critical
Publication of CN110798171B publication Critical patent/CN110798171B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/16—Networks for phase shifting

Abstract

The invention discloses a hybrid broadband high-precision phase shifter integrated circuit, which belongs to the technical field of radio frequency integrated circuits and is formed by cascading a pi-shaped L-C phase shifting unit, a 22.5-degree switch-type phase shifting unit, a 45-degree switch-type phase shifting unit, a broadband orthogonal signal generator, a quadrant selection unit and a transformer. The phase shifting units realize 5.625-degree and 11.25-degree phase shifting states, the two switch-type phase shifting units respectively realize 22.5-degree and 45-degree phase shifting states, the orthogonal signal generator is used for synthesizing a pair of orthogonal differential signals, and the quadrant selection unit switches the positive polarity and the negative polarity of the orthogonal signals through a switch to realize a 360-degree phase shifting range. Compared with the traditional switch type phase shifter, the hybrid phase shifter has the advantages of wide band, low insertion loss, high precision and the like.

Description

Hybrid broadband high-precision phase shifter integrated circuit
Technical Field
The invention relates to the field of radio frequency integrated circuits, in particular to a hybrid broadband high-precision phase shifter integrated circuit.
Background
The phase shifter is a core module in an analog phased array system, and broadband high-precision phase shifting is also a design difficulty of a phased array transceiver chip. The phase of the traditional switch-type phase shifter depends on the frequency, the phase shifting precision of the band edge is difficult to guarantee, and the design requirement of the broadband high-precision phase shifter is difficult to meet. At high frequencies, such as Ka band, the large insertion loss requires additional amplifiers to compensate for the gain, so the chip with integrated passive phase shifter does not take significant advantage of the total power consumption compared to the active structure.
Disclosure of Invention
On the basis of the prior art, the invention innovatively provides a hybrid broadband high-precision phase shifter integrated circuit, which can effectively expand the phase shift bandwidth, improve the phase shift precision and reduce the insertion loss.
The purpose of the invention is realized by the following technical scheme:
a hybrid broadband high-precision phase shifter integrated circuit is characterized in that the integrated circuit is formed by sequentially cascading a pi-type L-C phase shift unit, a 22.5-degree switch-type phase shift unit, a 45-degree switch-type phase shift unit, a broadband orthogonal signal generator, a quadrant selection unit and a transformer; the phase shifting unit comprises a pi-type L-C phase shifting unit, a 22.5-degree and 45-degree switch-type phase shifting unit, an orthogonal signal generator, a quadrant selection unit and a transformer, wherein the pi-type L-C phase shifting unit generates two phase shifting states of 5.625 degrees and 11.25 degrees by controlling a 2-bit capacitor array, the 22.5-degree and 45-degree switch-type phase shifting units are respectively used for generating 22.5-degree and 45-degree phase shifting states, the orthogonal signal generator is used for synthesizing a pair of orthogonal differential signals, the quadrant selection unit realizes a 360-degree phase shifting range by switching the positive polarity and the negative polarity of the orthogonal signals, and the transformer with a center tap couples the signals to output ends OP and ON.
Furthermore, the pi-type L-C phase shift unit comprises IP, IN and OP1、ON1Four ports, L1、L2Two inductances and Ca1、Ca2Two capacitor arrays; IP end connection capacitor array Ca1PLUS terminal and inductor L1One terminal of (1), inductance L1The other end of the capacitor is connected with a capacitor array Ca2PLUS terminal and output terminal OP1. The IN terminal is connected with a capacitor array Ca1MINUS terminal and inductor L2One terminal of (1), inductance L2The other end of the capacitor is connected with a capacitor array Ca2MINUS terminal and output terminal ON1；
Said Ca1、Ca2The two capacitor arrays are 2-bit adjustable capacitor arrays which comprise PLUS, MINUS and Vca1、Vca2Four ports, Mca1、Mca2Two are providedSwitching transistor, Cca1～Cca5Five capacitors and Rca1、Rca2、Rb1、Rb2、Rb3、Rb4Six resistors; PLUS termination capacitor Cca1、Cca3、Cca5One terminal of (C), a capacitorca1Is connected to the other terminal transistor MCa1Drain electrode of (2) and resistor Rb1One terminal of (C), a capacitorca3Is connected to the other terminal transistor Mca2Drain electrode of (2) and resistor Rb3One end of (a); MINUS termination capacitor Cca2、Cca4One terminal of and a capacitor Cca5Another terminal of (1), a capacitor Cca2Is connected to the other terminal transistor Mca1Source and resistor R ofb2One terminal of (C), a capacitorca4Is connected to the other terminal transistor Mca2Source and resistor R ofb4One end of (a); resistance Rb1、Rb2、Rb3、Rb4The other end of the first and second terminals is grounded; port Vca1To Rca1One end of (A) Rca1Is connected to the other terminal transistor Mca1Gate of (2), port Vca2To Rca2One end of (A) Rca2Is connected to the other terminal transistor Mca2A gate electrode of (1).
Furthermore, in the pi-type L-C phase shift unit, an inductor L1、L2The values are the same, marked as L, and the capacitance array Ca1、Ca2The values are the same, and the theoretical value calculation formula marked as C, L and C is as follows:
Figure BDA0002234463970000021
Figure BDA0002234463970000022
wherein Z is0The characteristic impedance of the system, typically 50 ohms,
Figure BDA0002234463970000023
is the amount of phase shift, ω0＝2πf0，f0Is a workerThe center frequency of the frequency band.
Further, the 22.5 degree switch type phase shift unit comprises IP2、IN2、OP2、ON2、VC1、VC2、VC3Seven ports, M1、M2、M3Three switching transistors, CP1、CP2、CP3、CP4Four capacitors, LS1、LS2、LP1Three inductors, RC1、RC2、RC3Three resistors, Port IP2Connecting inductor LS1One terminal of (1), transistor M1Source electrode and capacitor CP1One end of (1), port OP2Connecting inductor LS1Another terminal of (1), transistor M1Drain electrode of (1), capacitor CP2One end of (a); capacitor CP1Another terminal of the capacitor CP2Another end of (1), inductance LP1One terminal of (1), transistor M2A source electrode of (a); port IN2Connecting inductor LS2One terminal of (1), transistor M3Source electrode and capacitor CP3One end of (1), port ON2Connecting inductor LS2Another terminal of (1), transistor M3Drain electrode of (1), capacitor CP4One end of (a); capacitor CP3Another terminal of the capacitor CP4Another end of (1), inductance LP1Another terminal of (1), transistor M2A drain electrode of (1); port VC1Connecting resistor RC1One end of (A) RC1Is connected to the other terminal transistor M1Gate of (2), port VC2Connecting resistor RC2One end of (A) RC2Is connected to the other terminal transistor M2Gate of (2), port VC3Connecting resistor RC3One end of (A) RC3Is connected to the other terminal transistor M3A gate electrode of (1).
Further, in the 22.5 ° switch type phase shifter unit, the inductor LS1、LS2The same value is marked as LSParallel inductance LP1The value is recorded as LPCapacitor CP1～CP4The same value is marked as CPTransistor M1、M2、M3The capacitance at turn-off is denoted COFF，LS、CP、LRThe theoretical calculation formula is
Figure BDA0002234463970000024
Figure BDA0002234463970000025
Figure BDA0002234463970000026
Further, the 45-degree switch type phase shift unit comprises IP3、IN3、OP3、ON3、VC4、VC5、VC6Seven ports, M4、M5、M6Three switching transistors, CP5、CP6、CP7、CP8Four capacitors, LS3、LS4、LP2Three inductors, RC4、RC5、RC6Three resistors;
port IP3Connecting inductor LS3One terminal of (1), transistor M4Source electrode and capacitor CP5One end of (1), port OP3Connecting inductor LS3Another terminal of (1), transistor M4Drain electrode of (1), capacitor CP6One end of (a); capacitor CP5Another terminal of the capacitor CP6Another end of (1), inductance LP2One terminal of (1), transistor M5A source electrode of (a);
port IN3Connecting inductor LS4One terminal of (1), transistor M6Source electrode and capacitor CP7One end of (1), port ON3Connecting inductor LS4Another terminal of (1), transistor M6Drain electrode of (1), capacitor CP8One end of (a); capacitor CP7Another terminal of the capacitor CP8Another end of (1), inductance LP2Another terminal of (1), transistor M5A drain electrode of (1); port VC4Connecting resistor RC4One end of (A) RC4At the other end ofTransistor M4A gate electrode of (1); port VC5Connecting resistor RC5One end of (A) RC5Is connected to the other terminal transistor M5A gate electrode of (1); port VC6Connecting resistor RC6One end of (A) RC6Is connected to the other terminal transistor M6A gate electrode of (1).
Further, the broadband orthogonal signal generator comprises IP4、IN4、VIP、VIN、VQP、VQNSix ports, LS5、LS6Two inductors, CS1、CS2Two capacitors and RS1、RS2、RP1、RP2Four resistors;
port IP4Connecting resistor RS1One terminal of (1), a capacitor CS1One end of (V), port VIPA capacitor CS1Another terminal of (1), a resistor RP1One end of (a); port IN4Connecting resistor RS2One terminal of (1), a capacitor CS2One end of (V), port VINA capacitor CS2Another terminal of (1), a resistor RP2One end of (a); port VQNConnecting inductor LS6One terminal of (1), resistance RP1The other end of (V), port VQPConnecting inductor LS5One terminal of (1), resistance RP2The other end of (a); resistance RS1Another end of the inductor L is connected withS5The other end of (1), the resistance RS2Another end of the inductor L is connected withS6And the other end of the same.
Further, the quadrant selection unit comprises VIP、VIN、VQP、VQN、VOP、VONSix radio frequency ports, VSIP、VSIN、VSQP、VSQNFour control ports, one offset port VB、MI1～MI6And MQ1～MQ6Twelve transistors in total, C1～C4Four blocking capacitors and RIP、RIN、RQP、RQNFour bias resistors;
port VBConnected with four bias resistors RIP、RIN、RQP、RQNOne end of (V), port VIPDirect current connection and blocking capacitor C1One end of (A), C1Is connected to the other terminal transistor MI1Gate and bias resistor RIPThe other end of (V), port VINDirect current connection and blocking capacitor C2One end of (A), C2Is connected to the other terminal transistor MI2Gate and bias resistor RINThe other end of (a); transistor MI1Source and transistor MI2The source of (2) is grounded; transistor MI1Drain electrode of (2) is connected with the transistor MI3、MI4Source of (1), transistor MI2Drain electrode of (2) is connected with the transistor MI5、MI6A source electrode of (a); port VSIPTransistor MI3、MI6Gate of (2), port VSINTransistor MI4、MI5A gate electrode of (1); port VQPDirect current connection and blocking capacitor C3One end of (A), C3Is connected to the other terminal transistor MQ1Gate and bias resistor RQPThe other end of (V), port VQNDirect current connection and blocking capacitor C4One end of (A), C4Is connected to the other terminal transistor MQ2Gate and bias resistor RQNThe other end of (a); transistor MQ1Source and transistor MQ2The source of (2) is grounded; transistor MQ1Drain electrode of (2) is connected with the transistor MQ3、MQ4Source of (1), transistor MQ2Drain electrode of (2) is connected with the transistor MQ5、MQ6Source of (2), port VSQPTransistor MQ3、MQ6Gate of (2), port VSQNTransistor MQ4、MQ5A gate electrode of (1); port VOPTransistor MI3、MI5、MQ3、MQ5Drain electrode of (1), port VONTransistor MI4、MI6、MQ4、MQ6Of the substrate.
Further, the transformer comprises VOP、VONOP, ON four RF ports and a DC port VDD, port VOPIs connected with one end of the primary coil of the transformer, a port VONConnected with the other end of the primary coil of the transformer, the center tap of the primary coil is connected with a direct current port VDD, and a port OP is connected with a secondary line of the transformerOne end of the coil is connected with the other end of the secondary coil of the transformer through an ON port.
The invention has the following beneficial effects:
the invention integrates two phase-shifting states of 5.625 degrees and 11.25 degrees based on the pi-type L-C phase-shifting unit, thereby reducing the area of a chip; the parallel inductance structure of the switch type phase shifter improves the phase shifting precision of 22.5-degree and 45-degree phase shifting states at the edge of a frequency band; the broadband orthogonal signal generator replaces the traditional switch type phase shifter structure, realizes the 90-degree phase shift of the broadband, and reduces the insertion loss.
Drawings
Fig. 1 is a block diagram of the overall structure of a hybrid wideband high-precision phase shifter integrated circuit according to the present invention.
Fig. 2(a) and 2(b) are schematic circuit diagrams of the pi-type L-C phase shift unit and 2-bit tunable capacitor array of the hybrid wideband high-precision phase shifter integrated circuit of the present invention.
Fig. 3 is a schematic circuit diagram of a 45 ° switch-mode phase shifter element of a hybrid wideband high-precision phase shifter integrated circuit of the present invention.
Fig. 4 is a schematic circuit diagram of a 90 ° switch-type phase shifter element of the hybrid wideband high-precision phase shifter integrated circuit of the present invention.
Fig. 5 is a schematic circuit diagram of a quadrature signal generator of the hybrid wideband high-precision phase shifter integrated circuit of the present invention.
Fig. 6(a) and 6(b) are a schematic circuit diagram of a quadrant selection unit and a schematic circuit diagram of a transformer of a hybrid wideband high-precision phase shifter integrated circuit according to the present invention.
Fig. 7(a) and 7(b) are phase shift results and amplitude response results for hybrid wideband high precision phase shifter integrated circuits of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments, and the objects and effects of the invention will become more apparent. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the hybrid wideband high-precision phase shifter integrated circuit provided by the invention is formed by sequentially cascading a pi-type L-C phase shifting unit, a 22.5-degree switch-type phase shifting unit, a 45-degree switch-type phase shifting unit, a wideband orthogonal signal generator, a quadrant selection unit and a transformer; the phase shifting unit comprises a pi-type L-C phase shifting unit, a 22.5-degree and 45-degree switch-type phase shifting unit, an orthogonal signal generator, a quadrant selection unit and a transformer, wherein the pi-type L-C phase shifting unit generates two phase shifting states of 5.625 degrees and 11.25 degrees by controlling a 2-bit capacitor array, the 22.5-degree and 45-degree switch-type phase shifting units are respectively used for generating 22.5-degree and 45-degree phase shifting states, the orthogonal signal generator is used for synthesizing a pair of orthogonal differential signals, the quadrant selection unit realizes a 360-degree phase shifting range by switching the positive polarity and the negative polarity of the orthogonal signals, and the transformer with a center tap couples the signals to output ends OP and ON.
As shown IN FIG. 2(a), the proposed pi-type L-C phase shift unit of the present invention comprises IP, IN, OP1、ON1Four ports, L1、L2Two inductances and Ca1、Ca2Two capacitor arrays; IP end connection capacitor array Ca1PLUS terminal and inductor L1One terminal of (1), inductance L1The other end of the capacitor is connected with a capacitor array Ca2PLUS terminal and output terminal OP1. The IN terminal is connected with a capacitor array Ca1MINUS terminal and inductor L2One terminal of (1), inductance L2The other end of the capacitor is connected with a capacitor array Ca2MINUS terminal and output terminal ON1。
As shown in FIG. 2(b), the present invention provides a pi-type L-C phase shift unit Ca1、Ca2The two capacitor arrays are 2-bit adjustable capacitor arrays which comprise PLUS, MINUS and Vca1、Vca2Four ports, Mca1、Mca2Two switching transistors, Cca1～Cca5Five capacitors and Rca1、Rca2、Rb1、Rb2、Rb3、Rb4Six resistors; PLUS termination capacitor Cca1、Cca3、Cca5One terminal of (C), a capacitorca1Is connected to the other terminal transistor MCa1Drain electrode of (2) and resistor Rb1One terminal of (C), a capacitorca3Another end of (M)ca2Drain electrode of (2) and resistor Rb3One end of (a); MINUS termination capacitor Cca2、Cca4ToTerminal and capacitor Cca5Another terminal of (1), a capacitor Cca2Is connected to the other terminal transistor Mca1Source and resistor R ofb2One terminal of (C), a capacitorca4Is connected to the other terminal transistor Mca2Source and resistor R ofb4One end of (a); resistance Rb1、Rb2、Rb3、Rb4The other end of the first and second terminals is grounded; port Vca1To Rca1One end of (A) Rca1Is connected to the other terminal transistor Mca1Gate of (2), port Vca2To Rca2One end of (A) Rca2Is connected to the other terminal transistor Mca2A gate electrode of (1).
As one embodiment, in the pi-type L-C phase shift unit, the inductor L1、L2The values are the same, marked as L, and the capacitance array Ca1、Ca2The values are the same, and the theoretical value calculation formula marked as C, L and C is as follows:
Figure BDA0002234463970000051
Figure BDA0002234463970000052
wherein Z is0The characteristic impedance of the system, typically 50 ohms,
Figure BDA0002234463970000053
is the amount of phase shift, ω0＝2πf0，f0Is the center frequency of the operating band.
As shown in FIG. 3, the 22.5 degree switch type phase shift unit proposed by the present invention comprises IP2、IN2、OP2、ON2、VC1、VC2、VC3Seven ports, M1、M2、M3Three switching transistors, CP1、CP2、CP3、CP4Four capacitors, LS1、LS2、LP1Three inductors, RC1、RC2、RC3Three resistors, Port IP2Connecting inductor LS1One terminal of (1), transistor M1Source electrode and capacitor CP1One end of (1), port OP2Connecting inductor LS1Another terminal of (1), transistor M1Drain electrode of (1), capacitor CP2One end of (a); capacitor CP1Another terminal of the capacitor CP2Another end of (1), inductance LP1One terminal of (1), transistor M2A source electrode of (a); port IN2Connecting inductor LS2One terminal of (1), transistor M3Source electrode and capacitor CP3One end of (1), port ON2Connecting inductor LS2Another terminal of (1), transistor M3Drain electrode of (1), capacitor CP4One end of (a); capacitor CP3Another terminal of the capacitor CP4Another end of (1), inductance LP1Another terminal of (1), transistor M2A drain electrode of (1); port VC1Connecting resistor RC1One end of (A) RC1Is connected to the other terminal transistor M1Gate of (2), port VC2Connecting resistor RC2One end of (A) RC2Is connected to the other terminal transistor M2Gate of (2), port VC3Connecting resistor RC3One end of (A) RC3Is connected to the other terminal transistor M3A gate electrode of (1).
In a 22.5 DEG switch-type phase shifter element, as one example, an inductor LS1、LS2The same value is marked as LSParallel inductance LP1The value is recorded as LPCapacitor CP1～CP4The same value is marked as CPTransistor M1、M2、M3The capacitance at turn-off is denoted COFF，LS、CP、LRThe theoretical calculation formula is
Figure BDA0002234463970000061
Figure BDA0002234463970000062
Figure BDA0002234463970000063
As shown in FIG. 4, the 45-degree switch type phase shift unit proposed by the present invention comprises IP3、IN3、OP3、ON3、VC4、VC5、VC6Seven ports, M4、M5、M6Three switching transistors, CP5、CP6、CP7、CP8Four capacitors, LS3、LS4、LP2Three inductors, RC4、RC5、RC6Three resistors;
port IP3Connecting inductor LS3One terminal of (1), transistor M4Source electrode and capacitor CP5One end of (1), port OP3Connecting inductor LS3Another terminal of (1), transistor M4Drain electrode of (1), capacitor CP6One end of (a); capacitor CP5Another terminal of the capacitor CP6Another end of (1), inductance LP2One terminal of (1), transistor M5A source electrode of (a);
port IN3Connecting inductor LS4One terminal of (1), transistor M6Source electrode and capacitor CP7One end of (1), port ON3Connecting inductor LS4Another terminal of (1), transistor M6Drain electrode of (1), capacitor CP8One end of (a); capacitor CP7Another terminal of the capacitor CP8Another end of (1), inductance LP2Another terminal of (1), transistor M5A drain electrode of (1); port VC4Connecting resistor RC4One end of (A) RC4Is connected to the other terminal transistor M4A gate electrode of (1); port VC5Connecting resistor RC5One end of (A) RC5Is connected to the other terminal transistor M5A gate electrode of (1); port VC6Connecting resistor RC6One end of (A) RC6Is connected to the other terminal transistor M6A gate electrode of (1).
As shown in FIG. 5, the wideband quadrature signal generator proposed by the present invention includes IP4、IN4、VIP、VIN、VQP、VQNSix ports, LS5、LS6Two inductors, CS1、CS2Two capacitors and RS1、RS2、RP1、RP2Four resistors;
port IP4Connecting resistor RS1One terminal of (1), a capacitor CS1One end of (V), port VIPA capacitor CS1Another terminal of (1), a resistor RP1One end of (a); port IN4Connecting resistor RS2One terminal of (1), a capacitor CS2One end of (V), port VINA capacitor CS2Another terminal of (1), a resistor RP2One end of (a); port VQNConnecting inductor LS6One terminal of (1), resistance RP1The other end of (V), port VQPConnecting inductor LS5One terminal of (1), resistance RP2The other end of (a); resistance RS1Another end of the inductor L is connected withS5The other end of (1), the resistance RS2Another end of the inductor L is connected withS6And the other end of the same.
As shown in FIG. 6(a), the quadrant selection unit proposed by the present invention includes VIP、VIN、VQP、VQN、VOP、VONSix radio frequency ports, VSIP、VSIN、VSQP、VSQNFour control ports, one offset port VB、MI1～MI6And MQ1～MQ6Twelve transistors in total, C1～C4Four blocking capacitors and RIP、RIN、RQP、RQNFour bias resistors;
port VBConnected with four bias resistors RIP、RIN、RQP、RQNOne end of (V), port VIPDirect current connection and blocking capacitor C1One end of (A), C1Is connected to the other terminal transistor MI1Gate and bias resistor RIPThe other end of (V), port VINDirect current connection and blocking capacitor C2One end of (A), C2Is connected to the other terminal transistor MI2Gate and bias resistor RINThe other end of (a); transistor MI1Source and transistor MI2The source of (2) is grounded; transistor MI1Drain electrode of (2) is connected with the transistor MI3、MI4Source of (1), transistor MI2Drain electrode of (2) is connected with the transistor MI5、MI6A source electrode of (a); port VSIPTransistor MI3、MI6Gate of (2), port VSINTransistor MI4、MI5A gate electrode of (1); port VQPDirect current connection and blocking capacitor C3One end of (A), C3Is connected to the other terminal transistor MQ1Gate and bias resistor RQPThe other end of (V), port VQNDirect current connection and blocking capacitor C4One end of (A), C4Is connected to the other terminal transistor MQ2Gate and bias resistor RQNThe other end of (a); transistor MQ1Source and transistor MQ2The source of (2) is grounded; transistor MQ1Drain electrode of (2) is connected with the transistor MQ3、MQ4Source of (1), transistor MQ2Drain electrode of (2) is connected with the transistor MQ5、MQ6Source of (2), port VSQPTransistor MQ3、MQ6Gate of (2), port VSQNTransistor MQ4、MQ5A gate electrode of (1); port VOPTransistor MI3、MI5、MQ3、MQ5Drain electrode of (1), port VONTransistor MI4、MI6、MQ4、MQ6Of the substrate.
As shown in FIG. 6(b), the transformer of the present invention comprises a VOP、VONOP, ON four RF ports and a DC port VDD, port VOPIs connected with one end of the primary coil of the transformer, a port VONAnd the other end of the primary coil of the transformer is connected, a center tap of the primary coil is connected with a direct current port VDD, a port OP is connected with one end of the secondary coil of the transformer, and a port ON is connected with the other end of the secondary coil of the transformer.
The phase shift result of the hybrid broadband high-precision phase shifter provided by the invention is shown in fig. 7(a), and simulation results show that the phase shift precision of each phase shift state of the hybrid broadband high-precision phase shifter is ideal in the frequency range of 24G-34G. The amplitude response result of the hybrid broadband high-precision phase shifter provided by the invention is shown in fig. 7(b), and the simulation result shows that the amplitude fluctuation of the phase shifter of the structure is-0.9 dB to +0.9dB, and the average insertion loss is-7.2 dB, which shows that the insertion loss introduced by the phase shifter is very small.

Claims (9)

1. A mixed broadband high-precision phase shifter integrated circuit is characterized in that the integrated circuit is composed of a pi-shaped L-C phase shift unit, a 22.5-degree switch-type phase shift unit, a 45-degree switch-type phase shift unit, a broadband orthogonal signal generator, a quadrant selection unit and a transformer, wherein the pi-shaped L-C phase shift unit, the 22.5-degree switch-type phase shift unit and the 45-degree switch-type phase shift unit are sequentially cascaded, two output ports of the 45-degree switch-type phase shift unit are connected with two input ports of the broadband orthogonal signal generator, four output ports of the broadband orthogonal signal generator are correspondingly connected with four input ports of the quadrant selection unit one by one, and two output ports of the quadrant selection unit are connected with two input ports of the transformer; the phase shifting device comprises a pi-type L-C phase shifting unit, a 22.5-degree and 45-degree switch-type phase shifting unit, an orthogonal signal generator, a quadrant selection unit and a transformer, wherein the pi-type L-C phase shifting unit generates two phase shifting states of 5.625 degrees and 11.25 degrees by controlling a 2-bit capacitor array, the 22.5-degree and 45-degree switch-type phase shifting units are respectively used for generating 22.5-degree and 45-degree phase shifting states, the orthogonal signal generator is used for synthesizing a pair of orthogonal signals, the quadrant selection unit switches the positive polarity and the negative polarity of the orthogonal signals through a switch to achieve a 360-degree phase shifting range, and the transformer with a center tap couples the phase-shifted signals to output ends OP and ON.
2. The hybrid wideband high precision phase shifter integrated circuit as claimed IN claim 1, wherein the pi L-C phase shifting unit comprises IP, IN, OP1、ON1Four ports, L1、L2Two inductances and Ca1、Ca2Two capacitor arrays; IP end connection capacitor array Ca1PLUS terminal and inductor L1One terminal of (1), inductance L1The other end of the capacitor is connected with a capacitor array Ca2PLUS terminal and output terminal OP1(ii) a The IN terminal is connected with a capacitor array Ca1MINUS terminal and inductor L2One terminal of (1), inductance L2The other end of the capacitor is connected with a capacitor array Ca2MINUS terminal and output terminal ON1；
Said Ca1、Ca2Both capacitor arrays are2-bit tunable capacitor array comprising PLUS, MINUS, Vca1、Vca2Four ports, Mca1、Mca2Two switching transistors, Cca1～Cca5Five capacitors and Rca1、Rca2、Rb1、Rb2、Rb3、Rb4Six resistors; PLUS termination capacitor Cca1、Cca3、Cca5One terminal of (C), a capacitorca1Is connected to the other terminal transistor MCa1Drain electrode of (2) and resistor Rb1One terminal of (C), a capacitorca3Is connected to the other terminal transistor Mca2Drain electrode of (2) and resistor Rb3One end of (a); MINUS termination capacitor Cca2、Cca4One terminal of and a capacitor Cca5Another terminal of (1), a capacitor Cca2Is connected to the other terminal transistor Mca1Source and resistor R ofb2One terminal of (C), a capacitorca4Is connected to the other terminal transistor Mca2Source and resistor R ofb4One end of (a); resistance Rb1、Rb2、Rb3、Rb4The other end of the first and second terminals is grounded; port Vca1To Rca1One end of (A) Rca1Is connected to the other terminal transistor Mca1Gate of (2), port Vca2To Rca2One end of (A) Rca2Is connected to the other terminal transistor Mca2A gate electrode of (1).
3. The hybrid wideband high-precision phase shifter integrated circuit as claimed in claim 2, wherein the pi-type L-C phase shift unit comprises an inductor L1、L2The values are the same, marked as L, and the capacitance array Ca1、Ca2The values are the same, and the theoretical value calculation formula marked as C, L and C is as follows:
Figure FDA0003115032320000011
Figure FDA0003115032320000021
wherein Z is0The characteristic impedance of the system, typically 50 ohms,
Figure FDA0003115032320000022
is the amount of phase shift, ω0＝2πf0，f0Is the center frequency of the operating band.
4. The hybrid wideband high precision phase shifter integrated circuit of claim 1 wherein the 22.5 ° switch phase shift unit comprises IP2、IN2、OP2、ON2、VC1、VC2、VC3Seven ports, M1、M2、M3Three switching transistors, CP1、CP2、CP3、CP4Four capacitors, LS1、LS2、LP1Three inductors, RC1、RC2、RC3Three resistors, Port IP2Connecting inductor LS1One terminal of (1), transistor M1Source electrode and capacitor CP1One end of (1), port OP2Connecting inductor LS1Another terminal of (1), transistor M1Drain electrode of (1), capacitor CP2One end of (a); capacitor CP1Another terminal of the capacitor CP2Another end of (1), inductance LP1One terminal of (1), transistor M2A source electrode of (a); port IN2Connecting inductor LS2One terminal of (1), transistor M3Source electrode and capacitor CP3One end of (1), port ON2Connecting inductor LS2Another terminal of (1), transistor M3Drain electrode of (1), capacitor CP4One end of (a); capacitor CP3Another terminal of the capacitor CP4Another end of (1), inductance LP1Another terminal of (1), transistor M2A drain electrode of (1); port VC1Connecting resistor RC1One end of (A) RC1Is connected to the other terminal transistor M1Gate of (2), port VC2Connecting resistor RC2One end of (A) RC2Is connected to the other terminal transistor M2Gate of (2), port VC3Connecting resistor RC3One end of (A) RC3In addition toA terminal transistor M3A gate electrode of (1).
5. A hybrid wideband high-precision phase shifter integrated circuit as in claim 4 wherein the 22.5 ° switch phase shifter element has an inductor LS1、LS2The same value is marked as LSParallel inductance LP1The value is recorded as LPCapacitor CP1～CP4The same value is marked as CPTransistor M1、M2、M3The capacitance at turn-off is denoted COFF，LS、CP、LRThe theoretical calculation formula is
Figure FDA0003115032320000023
Figure FDA0003115032320000024
Figure FDA0003115032320000025
Wherein Z is0The characteristic impedance of the system, typically 50 ohms,
Figure FDA0003115032320000026
is the amount of phase shift, ω0＝2πf0，f0Is the center frequency of the operating band.
6. The hybrid wideband high precision phase shifter integrated circuit of claim 1 wherein the 45 ° switch phase shift unit comprises IP3、IN3、OP3、ON3、VC4、VC5、VC6Seven ports, M4、M5、M6Three switching transistors, CP5、CP6、CP7、CP8Four capacitors, LS3、LS4、LP2Three inductors, RC4、RC5、RC6Three resistors;
port IP3Connecting inductor LS3One terminal of (1), transistor M4Source electrode and capacitor CP5One end of (1), port OP3Connecting inductor LS3Another terminal of (1), transistor M4Drain electrode of (1), capacitor CP6One end of (a); capacitor CP5Another terminal of the capacitor CP6Another end of (1), inductance LP2One terminal of (1), transistor M5A source electrode of (a);
port IN3Connecting inductor LS4One terminal of (1), transistor M6Source electrode and capacitor CP7One end of (1), port ON3Connecting inductor LS4Another terminal of (1), transistor M6Drain electrode of (1), capacitor CP8One end of (a); capacitor CP7Another terminal of the capacitor CP8Another end of (1), inductance LP2Another terminal of (1), transistor M5A drain electrode of (1); port VC4Connecting resistor RC4One end of (A) RC4Is connected to the other terminal transistor M4A gate electrode of (1); port VC5Connecting resistor RC5One end of (A) RC5Is connected to the other terminal transistor M5A gate electrode of (1); port VC6Connecting resistor RC6One end of (A) RC6Is connected to the other terminal transistor M6A gate electrode of (1).
7. A hybrid wideband high-precision phase shifter integrated circuit as in claim 1 wherein the wideband quadrature signal generator comprises IP4、IN4、VIP、VIN、VQP、VQNSix ports, LS5、LS6Two inductors, CS1、CS2Two capacitors and RS1、RS2、RP1、RP2Four resistors;
port IP4Connecting resistor RS1One terminal of (1), a capacitor CS1One end of (V), port VIPA capacitor CS1In addition toOne terminal, resistor RP1One end of (a); port IN4Connecting resistor RS2One terminal of (1), a capacitor CS2One end of (V), port VINA capacitor CS2Another terminal of (1), a resistor RP2One end of (a); port VQNConnecting inductor LS6One terminal of (1), resistance RP1The other end of (V), port VQPConnecting inductor LS5One terminal of (1), resistance RP2The other end of (a); resistance RS1Another end of the inductor L is connected withS5The other end of (1), the resistance RS2Another end of the inductor L is connected withS6And the other end of the same.
8. The hybrid wideband high precision phase shifter integrated circuit of claim 1, wherein the quadrant selection unit comprises VIP、VIN、VQP、VQN、VOP、VONSix radio frequency ports, VSIP、VSIN、VSQP、VSQNFour control ports, one offset port VB、MI1～MI6And MQ1～MQ6Twelve transistors in total, C1～C4Four blocking capacitors and RIP、RIN、RQP、RQNFour bias resistors;
port VBConnected with four bias resistors RIP、RIN、RQP、RQNOne end of (V), port VIPDirect current connection and blocking capacitor C1One end of (A), C1Is connected to the other terminal transistor MI1Gate and bias resistor RIPThe other end of (V), port VINDirect current connection and blocking capacitor C2One end of (A), C2Is connected to the other terminal transistor MI2Gate and bias resistor RINThe other end of (a); transistor MI1Source and transistor MI2The source of (2) is grounded; transistor MI1Drain electrode of (2) is connected with the transistor MI3、MI4Source of (1), transistor MI2Drain electrode of (2) is connected with the transistor MI5、MI6A source electrode of (a); port VSIPTransistor MI3、MI6Gate of (2), port VSINTransistor MI4、MI5A gate electrode of (1); port VQPDirect current connection and blocking capacitor C3One end of (A), C3Is connected to the other terminal transistor MQ1Gate and bias resistor RQPThe other end of (V), port VQNDirect current connection and blocking capacitor C4One end of (A), C4Is connected to the other terminal transistor MQ2Gate and bias resistor RQNThe other end of (a); transistor MQ1Source and transistor MQ2The source of (2) is grounded; transistor MQ1Drain electrode of (2) is connected with the transistor MQ3、MQ4Source of (1), transistor MQ2Drain electrode of (2) is connected with the transistor MQ5、MQ6Source of (2), port VSQPTransistor MQ3、MQ6Gate of (2), port VSQNTransistor MQ4、MQ5A gate electrode of (1); port VOPTransistor MI3、MI5、MQ3、MQ5Drain electrode of (1), port VONTransistor MI4、MI6、MQ4、MQ6Of the substrate.
9. A hybrid wideband high precision phase shifter integrated circuit as in claim 1 wherein the transformer comprises VOP、VONOP, ON four RF ports and a DC port VDD, port VOPIs connected with one end of the primary coil of the transformer, a port VONAnd the other end of the primary coil of the transformer is connected, a center tap of the primary coil is connected with a direct current port VDD, a port OP is connected with one end of the secondary coil of the transformer, and a port ON is connected with the other end of the secondary coil of the transformer.
CN201910978618.8A 2019-10-15 2019-10-15 Hybrid broadband high-precision phase shifter integrated circuit Active CN110798171B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910978618.8A CN110798171B (en) 2019-10-15 2019-10-15 Hybrid broadband high-precision phase shifter integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910978618.8A CN110798171B (en) 2019-10-15 2019-10-15 Hybrid broadband high-precision phase shifter integrated circuit

Publications (2)

Publication Number Publication Date
CN110798171A CN110798171A (en) 2020-02-14
CN110798171B true CN110798171B (en) 2021-08-24

Family

ID=69439161

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910978618.8A Active CN110798171B (en) 2019-10-15 2019-10-15 Hybrid broadband high-precision phase shifter integrated circuit

Country Status (1)

Country Link
CN (1) CN110798171B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112787628A (en) * 2020-12-15 2021-05-11 西安电子科技大学 Ultra-wideband reconfigurable active phase shifter
CN113783550B (en) * 2021-11-12 2022-01-28 成都明夷电子科技有限公司 High-precision numerical control phase shifter for K wave band and phase shifting method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647789A (en) * 1984-09-14 1987-03-03 Rca Corporation Active element microwave phase shifter
JPH02179019A (en) * 1988-12-28 1990-07-12 Sharp Corp Phase shift circuit
CN101297479A (en) * 2005-11-03 2008-10-29 诺基亚公司 Method and arrangement for performing analog signal processing and measuring between a signal source and a load
CN103986439A (en) * 2014-05-13 2014-08-13 西安电子科技大学 Ultra-wide-band five-digit active phase shifter based on orthogonal vector modulation
CN104767501A (en) * 2015-05-06 2015-07-08 中国科学技术大学 Six-bit 360-degree active phase shifter based on ultrahigh frequency RFID application
CN106160737A (en) * 2014-06-02 2016-11-23 联发科技股份有限公司 A kind of Method of Phase-Shift Controlling and device
CN108989143A (en) * 2018-05-25 2018-12-11 上海华岭集成电路技术股份有限公司 General semiconductor high-speed serial signals automatic test approach
CN109586682A (en) * 2018-09-30 2019-04-05 天津大学 A kind of millimeter wave active orthogonal signal generator

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101741339B (en) * 2009-12-01 2012-05-30 北京东方信联无线通信有限公司 Broadband quadrature phase shifter
JP6166608B2 (en) * 2013-07-18 2017-07-19 太陽誘電株式会社 Switch device and module
CN103746670B (en) * 2014-01-13 2017-01-11 复旦大学 X-wave band 5-digit active local oscillation phase shifter
US10033349B2 (en) * 2016-02-05 2018-07-24 Psemi Corporation Low loss multi-state phase shifter

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647789A (en) * 1984-09-14 1987-03-03 Rca Corporation Active element microwave phase shifter
JPH02179019A (en) * 1988-12-28 1990-07-12 Sharp Corp Phase shift circuit
CN101297479A (en) * 2005-11-03 2008-10-29 诺基亚公司 Method and arrangement for performing analog signal processing and measuring between a signal source and a load
CN103986439A (en) * 2014-05-13 2014-08-13 西安电子科技大学 Ultra-wide-band five-digit active phase shifter based on orthogonal vector modulation
CN106160737A (en) * 2014-06-02 2016-11-23 联发科技股份有限公司 A kind of Method of Phase-Shift Controlling and device
CN104767501A (en) * 2015-05-06 2015-07-08 中国科学技术大学 Six-bit 360-degree active phase shifter based on ultrahigh frequency RFID application
CN108989143A (en) * 2018-05-25 2018-12-11 上海华岭集成电路技术股份有限公司 General semiconductor high-speed serial signals automatic test approach
CN109586682A (en) * 2018-09-30 2019-04-05 天津大学 A kind of millimeter wave active orthogonal signal generator

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
K波段CMOS反射负载型无源移相器;齐全文等;《北京理工大学学报》;20171115;第37卷(第11期);第1190-1194页 *
Robin Garg等.A 28-GHz Low-Power Phased-Array Receiver Front-End With 360° RTPS Phase Shift Range.《IEEE Transactions on Microwave Theory and Techniques 》.2017,第65卷(第11期),第4703-4714页. *
用于海洋监测的宽带数字相控阵关键技术;徐志伟等;《科技导报》;20171028;第35卷(第20期);第119-125页 *

Also Published As

Publication number Publication date
CN110798171A (en) 2020-02-14

Similar Documents

Publication Publication Date Title
CN110212887B (en) Radio frequency active phase shifter structure
JP4373954B2 (en) 90 degree hybrid circuit
CN110798171B (en) Hybrid broadband high-precision phase shifter integrated circuit
CN109802652B (en) Phase shifter of 5G phased array
CN107863949B (en) X-band 5-phase shifter based on combination of active phase shifter and passive phase shifter
CN110380707A (en) A kind of on piece Vector Modulation phase shifter
JP3387931B2 (en) Compensated ring mixer
CN108649922A (en) A kind of temperature compensating type phase shifter
CN114039559A (en) Push-pull power amplifying circuit and radio frequency front end module
CN114070261A (en) High-precision low-insertion-loss low-additional-phase-shift numerical control attenuator for W wave band
US5144266A (en) Broadband high frequency active MMIC circulator
CN112688664A (en) Broadband six-bit MMIC numerical control phase shifter
CN112838852A (en) Fully differential single-pole single-throw switch with high isolation and low insertion loss
CN111082773B (en) X/Ku wave band amplitude-phase control transceiver chip
US8362835B2 (en) Decade bandwidth planar MMIC four port transformer
US6664870B2 (en) Compact 180 degree phase shifter
CN115967369A (en) Ultra-wideband phase shifter based on band-pass filter network
US5309124A (en) Analog variable phase shifter with active matching circuits
CN115765669A (en) 120 to 160GHz broadband compact 6-bit passive vector modulation type phase shifter
CN112271419B (en) Ultra-wideband digital phase shifter with all-pass filter structure
CN114499454A (en) Silicon-based millimeter wave differential reflection type phase shifter with novel structure
Yang et al. A Dual-Band Vector-Sum Phase Shifter for 28-GHz and 60-GHz Phased Arrays in 65-nm CMOS
CN117155291B (en) Broadband single-side-band up-converter capable of calibrating local oscillator leakage
CN217770043U (en) High-balance active balun circuit
CN117767913A (en) Broadband active phase shifter circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Xu Zhiwei

Inventor after: Wang Shaogang

Inventor after: Li Nayu

Inventor after: Li Min

Inventor after: Gao Huiyan

Inventor after: Zhang Zijiang

Inventor after: Song Chunyi

Inventor before: Xu Zhiwei

Inventor before: Wang Shaogang

Inventor before: Li Nayu

Inventor before: Li Min

Inventor before: Gao Huiyan

Inventor before: Zhang Zijiang

GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230327

Address after: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office)

Patentee after: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD.

Address before: 310058 Yuhang Tang Road, Xihu District, Hangzhou, Zhejiang 866

Patentee before: ZHEJIANG University

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230703

Address after: Plant 1, No. 13, Guiyang Avenue, Yantai Economic and Technological Development Zone, Shandong Province, 264000

Patentee after: Yantai Xin Yang Ju Array Microelectronics Co.,Ltd.

Address before: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office)

Patentee before: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD.