CN110797376A - Double-sided display device - Google Patents

Double-sided display device Download PDF

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Publication number
CN110797376A
CN110797376A CN201910959332.5A CN201910959332A CN110797376A CN 110797376 A CN110797376 A CN 110797376A CN 201910959332 A CN201910959332 A CN 201910959332A CN 110797376 A CN110797376 A CN 110797376A
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light emitting
organic light
emitting diode
sub
pixels
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熊志勇
文卓奇
代汗清
解凤贤
张万路
郭睿倩
张国旗
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Fudan University
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Fudan University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a double-sided display device. The transparent display screen structure with the mixed OLED organic light-emitting diodes and the QLED quantum dot light-emitting diodes is adopted; one pixel in the display area comprises R, G, B sub-pixels, wherein R simultaneously comprises two sub-pixels of R1 and R2, G simultaneously comprises two sub-pixels of G1 and G2, B simultaneously comprises two sub-pixels of B1 and B2, R1, G1 and B1 are OLED organic light emitting diodes, R2, G2 and B2 are QLED quantum dot light emitting diodes, and the like, and the display area of the whole array matrix is formed. According to the invention, the QLED device is applied to the display pixel point, so that the narrow spectrum of the pixel point in the region is realized, and a double-sided display scheme with excellent performance is further provided; the double-sided display scheme of the invention can realize the adjustability of wide color gamut and narrow color gamut.

Description

Double-sided display device
Technical Field
The invention belongs to the technical field of display, and particularly relates to a double-sided display device.
Background
Because the spectrum of the intrinsic spectrum of the OLED is wide and the spectrum has a shoulder peak, the spectrum can not be narrowed, and the color purity is poor. Therefore, the AMOLED mobile phone and the wearing product both adopt a top emission AMOLED device structure, that is, light of the organic light emitting layer is emitted from the cathode side, the cathode has certain impermeability, so that an optical microcavity between the electrodes is formed, and the light is vibrated and coupled out of a narrowed spectrum in the microcavity, thereby meeting daily consumer product requirements of high color purity (fig. 1).
In the conventional method for manufacturing the OLED transparent display, only the film layer with high emission characteristic is required to be changed into the film layer with semi-permeability or high permeability, so that when the light of the light emitting layer meets the anode, the light is not totally reflected (fig. 2) like the conventional display, but partially reflected, and partially directly emitted from the back plate side, so that the light is the transparent display (fig. 3) in view of the whole display effect.
As shown in fig. 4, the spectrum of the transparent OLED display panel is low in the emission rates of the cathode and the anode, so that the microcavity effect between the cathode and the anode is greatly reduced, and thus the emission spectrum of the transparent panel no longer has a narrowing effect, which is close to the intrinsic PL spectrum, and the color purity is greatly reduced compared to the conventional OLED panel having a narrowed spectrum.
It has been proposed to add R, G, B filters to R, G, B pixels to improve color purity by filtering, but this is not very profitable, and the increase in filters greatly reduces the transmittance of the transparent panel, which affects the transparent display effect.
Therefore, the innovation is advanced in the following points: 1) double-sided display is realized, but the color purity is improved; 2) double-sided display can realize color gamut adjustment; 3) double-sided display, synchronous control or independent control.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a device for realizing double-sided display by transparent or sub-pixel separation. The device can select the front-side display and the back-side display or the double-side display through the drive control, can improve the color purity of the double-side display screen, and can adjust the color gamut display mode. The technical scheme of the invention is specifically introduced as follows.
The invention provides a double-sided display device which adopts OLED organic light-emitting diodes and QLED quantum dots to emit light
The diode mixed transparent display screen structure realizes double-sided display; one pixel in the display area comprises R, G, B sub-pixels, wherein R simultaneously comprises two sub-pixels of R1 and R2, G simultaneously comprises two sub-pixels of G1 and G2, B simultaneously comprises two sub-pixels of B1 and B2, R1, G1 and B1 are OLED organic light emitting diodes, R2, G2 and B2 are QLED quantum dot light emitting diodes, and the like, and the display area of the whole array matrix is formed.
In the invention, functional layers, cathodes and anodes in the OLED organic light-emitting diode and the QLED quantum dot light-emitting diode are set by the same process, the same material and the same thickness; the anode is semi-permeable or transparent.
In the invention, the power line corresponding to the OLED organic light emitting array is PVDD1, and the QLED quantum dot light emitting array pair
The corresponding power line is PVDD2, and the PVDD1 line and the PVDD2 line are respectively controlled separately; while the data signal between the two sub-pixels of each cell is common.
In the invention, the cathodes and the anodes of the OLED organic light-emitting diode and the QLED quantum dot light-emitting diode are set oppositely, the cathode of the OLED organic light-emitting diode is semi-transparent, and light is emitted from the top; the anode in the QLED quantum dot light-emitting diode is transparent, and light is emitted from the bottom.
In the invention, a thin layer of metal is evaporated on a cathode in an OLED organic light-emitting diode, and the thickness of the metal is 10-20 nm; thicker metal is evaporated on a cathode in the QLED quantum dot light-emitting diode, and the thickness is between 40nm and 150 nm.
According to the invention, a composite layer of ITO and a metal reflecting electrode is evaporated on an anode in an OLED organic light-emitting diode, and a single layer of ITO is evaporated in a QLED quantum dot light-emitting diode; the ITO film layer is shared by two units, and has the same thickness and the same process.
In the invention, power lines corresponding to R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; the data signals between the two subpixels of each cell are controlled separately.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the QLED device is applied to the display pixel point, so that the narrow spectrum of the pixel point in the region is realized, and a double-sided display scheme with excellent performance is further provided;
2. the double-sided display scheme of the invention can realize the adjustability of wide color gamut and narrow color gamut.
3. The invention can realize the selection of front and back single-sided display or double-sided display through drive control.
4. The invention provides a plurality of driving connection schemes for the display panel structure that each pixel unit comprises two sub-pixels, and can realize corresponding display operation.
5. Each pixel unit of the display panel structure comprises two sub-pixels, so that the display panel structure can be compatible and shared in the aspects of an organic functional layer and a cathode and an anode, the process cost is saved, the optimized utilization on the structure is realized, and meanwhile, the display panel structure also obtains beneficial contribution in the aspect of product resolution specification.
Drawings
FIG. 1 is a graph comparing the emission spectra of a conventional OLED structure with a microcavity OLED structure. The figure shows that: compared with the traditional OLED structure, the spectrum under the microcavity OLED structure is narrowed, and the color purity can be improved.
FIG. 2 is a detailed film stack diagram of a top-emitting microcavity OLED structure. The structure comprises a glass substrate, a driving tube unit, a reflecting electrode, a hole transport layer, a light-emitting layer, an electron transport layer, a semi-permeable cathode, a protective layer and a packaging glass layer from bottom to top in sequence.
Fig. 3 is a detailed film stack diagram of an anode transparent dual-sided display OLED structure. The structure comprises a glass substrate, a driving tube unit, a semi-permeable electrode, a hole transport layer, a light emitting layer, an electron transport layer, a semi-permeable cathode, a protective layer and a packaging glass layer from bottom to top in sequence.
FIG. 4 is a graph comparing emission spectra of a conventional OLED display screen and a transparent OLED display screen. The figure shows that: the spectrum of the transparent OLED display becomes wider and the color purity becomes lower than that of the conventional OLED display.
Fig. 5 is a plan layout of subpixels where OLED display technology is mixed with quantum dot display technology. Each sub-pixel unit comprises two small units, one unit is in OLED light-emitting technology, and the other unit is in quantum dot light-emitting technology.
Fig. 6 is a cross-sectional layout of subpixels that mixes OLED display technology with quantum dot display technology. Each sub-pixel unit comprises two small units, one unit is in OLED light-emitting technology, and the other unit is in quantum dot light-emitting technology.
Fig. 7 is an intrinsic spectrum of quantum dot light display. The spectrum of R, G and B used for conventional display is contained in the figure, and the half-wave width of the spectrum is very narrow and the color purity is high. In fact, the quantum dot light emission can obtain more spectrums with different spectrum center peaks.
Fig. 8 is a panel pixel architecture and corresponding driving architecture diagram for this solution. Illustrated in the figure are: the power lines corresponding to the R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; while the data signal between the two sub-pixels of each cell is common. Thus, when in operation, the displayed pictures can be ensured to be the same and synchronous when the input PVDD1, or PVDD2, or PVDD1 and PVDD2 are input simultaneously.
Fig. 9 is a pixel driving circuit diagram of this solution. The power lines corresponding to the R1, G1, B1OLED organic light emitting arrays are shown as PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; while the data signal between the two sub-pixels of each cell is common. The relevant connection relationship of the corresponding scan line, Cst storage capacitor, led and supply voltages PVDD and PVEE is given.
Fig. 10 is a diagram of the gamut rendering effect of an implementation of this solution. In the figure, when the power line PVDD1 is turned on in actual operation, the OLED in the transparent screen is turned on, and the color of the low color gamut is displayed; when the power line PVDD2 is turned on, the color of the QLED high gamut is displayed; when the power lines PVDD1 and PVDD2 are simultaneously on, the OLED pixels and QLEDs operate simultaneously and synchronously with a display gamut intermediate between the right.
Fig. 11 is a panel pixel array architecture diagram of this solution with sub-pixel separation. Each unit pixel is shown to include two sub-pixel units, namely R, G, B unit pixels specifically including R1, R2; g1, G2; b1, B2.
Fig. 12 is a sectional structural view of a display device of such a solution of sub-pixel separation. R1, G1 and B1 are OLED organic light emitting diodes, and R2, G2 and B2 are quantum dot light emitting diodes. And so on, forming the display area of the whole array matrix. The OLED organic light-emitting diode and the quantum dot light-emitting diode are made of different light-emitting materials, the setting of the cathode and the setting of the anode are just opposite, namely the OLED display cathode is semi-transparent, and light is emitted from the top; the QLED shows the anode transparent and light exits the bottom. And the whole framework realizes that both sides can be displayed.
Fig. 13 is a diagram illustrating a specific film layer overlap and process scheme for this sub-pixel separation solution. The figure shows that: for the difference of the cathodes, evaporating by a slit-shaped shadow mask, wherein the cathode of the OLED unit is evaporated with metal in a thin layer of 10-20 nm; the cathode of the QLED unit is evaporated with thicker metal between 40nm and 150 nm; for the difference of the anodes, the anode corresponding to the OLED unit is a composite layer of ITO and a metal reflecting electrode, and the QLED is single-layer ITO; the ITO film layer is shared by two units, and has the same thickness and the same process.
Fig. 14 is an explanatory diagram of a specific driving scheme of such a sub-pixel division solution. The figure shows that: the power lines corresponding to the R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; and the data signal between the two sub-pixels of each cell is common, as shown. Thus, when in operation, the displayed picture can be ensured to be synchronous when the input PVDD1, or PVDD2, or PVDD1 and PVDD2 are input simultaneously.
Fig. 15 is a second illustration of a specific driving scheme of this sub-pixel separation solution. The figure shows that: the signal lines corresponding to the R1, G1 and B1OLED organic light-emitting arrays are Data 1; the signal lines corresponding to the R2, G2 and B2 OLED organic light-emitting arrays are Data 2, and the two signal lines are respectively controlled separately; and the PVDD, PVEE power supply lines between the two sub-pixels of each cell are common, as shown. Thus, when Data 1 or Data 2 is input or Data 1 and Data 2 are input simultaneously, the displayed picture is ensured to be synchronous.
Fig. 16 is a third explanatory view of a specific driving scheme of such a sub-pixel division solution. The figure shows that: the power lines corresponding to the R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; and the data signals between the two sub-pixels of each cell are separately controlled, as shown. In this way, during operation, the contents displayed on the two sides can be independently controlled, and the respective definitions of the patterns on the two sides can be realized.
Detailed Description
The technical scheme of the invention is explained in detail in the following by combining the drawings and the embodiment.
Example 1
The structure of the scheme is a transparent display screen structure with a mixed OLED organic light emitting diode and quantum dot light emitting diode to realize double-sided display. As shown in fig. 5, a pixel includes R, G, and B sub-pixels, where R has two sub-pixels of R1 and R2, G has two sub-pixels of G1 and G2, and B has two sub-pixels of B1 and B2. Wherein, R1, G1 and B1 are OLED organic light emitting diodes, and R2, G2 and B2 are quantum dot light emitting diodes. And so on, forming the display area of the whole array matrix.
The organic light emitting diode of the OLED and the quantum dot light emitting diode have different light emitting materials, and other functional layers, a cathode and an anode can be set by the same process, the same material and the same thickness (figure 6).
Due to the intrinsic narrow-spectrum effect of the quantum dot material, a narrow spectrum is still emitted in the case of the transparent or semi-transparent electrode (fig. 7). Thus, a transparent display panel with high color purity even in the case of transparent electrodes is ensured.
The power lines corresponding to the R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 QLED organic light-emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately (figure 8); while the data signal between the two sub-pixels of each cell is common, as shown in fig. 9. Thus, when in operation, the displayed pictures can be ensured to be the same and synchronous when the input PVDD1, or PVDD2, or PVDD1 and PVDD2 are input simultaneously.
In actual work, when the power line PVDD1 is opened, the OLED in the transparent screen is opened, and the color of the low color gamut is displayed; when the power line PVDD2 is turned on, the color of the QLED high gamut is displayed; when the power lines PVDD1 and PVDD2 are simultaneously turned on, the OLED pixels and QLEDs operate simultaneously and synchronously, and the display gamut is in between.
Therefore, the proper power line on mode can be selected according to the actual preference of the consumer for color and tone (fig. 10).
Example 2
The structure of the scheme is a transparent display screen structure with a mixed OLED organic light emitting diode and quantum dot light emitting diode to realize double-sided display. As shown in fig. 11, a pixel includes R, G, and B sub-pixels, where R has two sub-pixels of R1 and R2, G has two sub-pixels of G1 and G2, and B has two sub-pixels of B1 and B2. Wherein, R1, G1 and B1 are OLED organic light emitting diodes, and R2, G2 and B2 are quantum dot light emitting diodes. And so on, forming the display area of the whole array matrix.
The OLED organic light-emitting diode and the quantum dot light-emitting diode are made of different light-emitting materials, the setting of the cathode and the setting of the anode are just opposite, namely the OLED display cathode is semi-transparent, and light is emitted from the top; the QLED shows the anode transparent and light exits the bottom. And the realization of double-sided display (fig. 12) is possible with respect to the whole architecture.
After a proper driving circuit is matched, front display can be controlled; or realizing reverse display; or both the front and back sides.
The specific film matching and process forming method comprises the following steps:
as shown in fig. 13, for the difference of the cathode, evaporation is performed through a slit-shaped shadow mask, wherein the cathode of the OLED unit is evaporated with a thin layer of metal, between 10 nm and 20 nm; the cathode of the QLED unit is evaporated with thicker metal between 40nm and 150 nm; for the difference of the anodes, the anode corresponding to the OLED unit is a composite layer of ITO and a metal reflecting electrode, and the QLED is single-layer ITO; the ITO film layer is shared by two units, and has the same thickness and the same process.
The power lines corresponding to the R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; while the data signal between the two sub-pixels of each cell is common, as in fig. 14. Thus, when in operation, the displayed pictures can be ensured to be the same and synchronous when the input PVDD1, or PVDD2, or PVDD1 and PVDD2 are input simultaneously.
The signal lines corresponding to the R1, G1 and B1OLED organic light-emitting arrays are Data 1; the signal lines corresponding to the R2, G2 and B2 QLED organic light-emitting arrays are Data 2, and the two signal lines are respectively controlled separately; while the PVDD, PVEE power supply lines between the two sub-pixels of each cell are common, as in fig. 15. Thus, when Data 1 or Data 2 is input or Data 1 and Data 2 are input simultaneously, the displayed picture is ensured to be synchronous.
The power lines corresponding to the R1, G1 and B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; while the data signals between the two sub-pixels of each cell are separately controlled, as in fig. 16. Therefore, during operation, the content of double-sided display can be independently controlled, and the situation that the recorded patterns are reversed as possible in the above embodiment is avoided.

Claims (7)

1. A double-sided display device is characterized in that a transparent display screen structure formed by mixing an OLED organic light-emitting diode and a QLED quantum dot light-emitting diode is adopted; one pixel in the display area comprises R, G, B sub-pixels, wherein R simultaneously comprises two sub-pixels of R1 and R2, G simultaneously comprises two sub-pixels of G1 and G2, B simultaneously comprises two sub-pixels of B1 and B2, R1, G1 and B1 are OLED organic light emitting diodes, R2, G2 and B2 are QLED quantum dot light emitting diodes, and the like, and the display area of the whole array matrix is formed.
2. The dual-sided display device of claim 1, wherein the functional layers in the OLED organic light emitting diode and the QLED quantum dot light emitting diode are set with the same process, the same material, and the same thickness as the cathode and the anode; the anode is semi-permeable or transparent.
3. The dual-sided display device of claim 2, wherein the power line corresponding to the OLED organic light emitting array is PVDD1, the power line corresponding to the QLED quantum dot light emitting array is PVDD2, and the PVDD1 line and the PVDD2 line are separately controlled; while the data signal between the two sub-pixels of each cell is common.
4. The dual-sided display device of claim 1, wherein the cathodes and anodes of the OLED organic light emitting diode and the QLED qd-led are oppositely set, the cathode of the OLED organic light emitting diode is semi-transparent, and light is emitted from the top; the anode in the QLED quantum dot light-emitting diode is transparent, and light is emitted from the bottom.
5. The dual sided display device of claim 4, wherein the cathode in the OLED organic light emitting diode is evaporated with a thin layer of metal between 10-20nm thick; thicker metal is evaporated on a cathode in the QLED quantum dot light-emitting diode, and the thickness is between 40nm and 150 nm.
6. The dual-sided display device of claim 4, wherein a composite layer of ITO and metal reflective electrode is evaporated on the anode of the OLED organic light emitting diode, and a single layer of ITO is evaporated in the QLED quantum dot light emitting diode; the ITO film layer is shared by two units, and has the same thickness and the same process.
7. The dual-sided display device of claim 4, wherein the power lines corresponding to the R1, G1, B1OLED organic light emitting arrays are PVDD 1; the power lines corresponding to the R2, G2 and B2 OLED organic light emitting arrays are PVDD2, and the two PVDD lines are respectively controlled separately; the data signals between the two subpixels of each cell are controlled separately.
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CN107958961A (en) * 2017-11-20 2018-04-24 深圳市华星光电半导体显示技术有限公司 Series connection quantum dot light emitting device, panel, that is, display
CN108598121A (en) * 2018-04-27 2018-09-28 京东方科技集团股份有限公司 A kind of double-sided display substrate and preparation method thereof, driving circuit and its driving method
CN109300968A (en) * 2018-11-22 2019-02-01 合肥鑫晟光电科技有限公司 A kind of display base plate, display device and display control method

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Publication number Priority date Publication date Assignee Title
CN104900682A (en) * 2015-06-10 2015-09-09 昆山国显光电有限公司 Transparent display device, display structure and pixel unit structure thereof
CN107958961A (en) * 2017-11-20 2018-04-24 深圳市华星光电半导体显示技术有限公司 Series connection quantum dot light emitting device, panel, that is, display
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230063949A1 (en) * 2020-01-27 2023-03-02 Sharp Kabushiki Kaisha Display device
US11804182B2 (en) * 2020-01-27 2023-10-31 Sharp Kabushiki Kaisha Display device with pixel structure capable of extracting light from quantum-dot light-emitting layer and organic light-emitting layer of pixel structure

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