CN110797303B - Substrate, preparation method thereof and display device - Google Patents
Substrate, preparation method thereof and display device Download PDFInfo
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- CN110797303B CN110797303B CN201911090120.4A CN201911090120A CN110797303B CN 110797303 B CN110797303 B CN 110797303B CN 201911090120 A CN201911090120 A CN 201911090120A CN 110797303 B CN110797303 B CN 110797303B
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- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 153
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 239000003607 modifier Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 229920006268 silicone film Polymers 0.000 claims description 17
- 229910018557 Si O Inorganic materials 0.000 claims description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000005886 esterification reaction Methods 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 69
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 3
- 229910020388 SiO1/2 Inorganic materials 0.000 description 2
- 229910020447 SiO2/2 Inorganic materials 0.000 description 2
- 229910020485 SiO4/2 Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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Abstract
The embodiment of the invention provides a substrate, a preparation method thereof and a display device, and belongs to the technical field of display. A method of preparing a substrate, comprising: sequentially forming a first flat film and a second flat film on a substrate, wherein the hardness of the first flat film is greater than that of the second flat film; etching the second flat film and the first flat film by adopting a photoetching process to obtain a first flat layer and a second flat layer which are sequentially arranged on the substrate; the first flat layer comprises a first via hole, the second flat layer comprises a second via hole, and the orthographic projection of at least part of the second via hole on the substrate is overlapped with the orthographic projection of the first via hole on the substrate.
Description
Technical Field
The invention relates to the technical field of display, in particular to a substrate, a preparation method of the substrate and a display device.
Background
With the rapid development of display technology, in order to bring better experience to users, display devices such as mobile phones and the like are continuously updated and iterated.
The display device comprises a plurality of conductive film layers, insulating layers are arranged among the conductive film layers, partial conductive film layers are required to be electrically connected through via holes in the insulating layers, if the slope angle of each via hole is large (85-90 degrees), the conductive film layers passing through the via holes are easily broken in the via holes, and therefore the display effect of the display device is affected.
Disclosure of Invention
The embodiment of the invention provides a substrate, a preparation method thereof and a display device, which can reduce the gradient angle of a second through hole so as to improve the display effect of the display device.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, a method for manufacturing a substrate is provided, including: sequentially forming a first flat film and a second flat film on a substrate, wherein the hardness of the first flat film is greater than that of the second flat film; etching the second flat film and the first flat film by adopting a photoetching process to obtain a first flat layer and a second flat layer which are sequentially arranged on the substrate; the first flat layer comprises a first via hole, the second flat layer comprises a second via hole, and at least part of the orthographic projection of the second via hole on the substrate is overlapped with the orthographic projection of the first via hole on the substrate.
Optionally, forming the first and second flat films includes: forming a first organic silicon film on the substrate, wherein the material of the first organic silicon film comprises a terminal hydroxyl group; treating the first organic silicon film by using a double-bond modifier; the double bond modifier comprises carboxyl and double bonds, and the double bond modifier and the terminal hydroxyl in the first organic silicon film are subjected to esterification reaction to obtain a first flat film; and forming a second organic silicon film on the side of the first flat film, which is far away from the substrate, wherein the Si-O skeleton in the material of the second organic silicon film is the same as the Si-O skeleton in the material of the first organic silicon film.
Optionally, the material of the double bond modifier comprises one of acrylic acid and methacrylic acid.
Optionally, the second silicone film comprises hydroxyl groups; forming a second flat film, further comprising: treating the second organic silicon film by using a hydroxyl modifier; and the hydroxyl modifier and the hydroxyl in the second organic silicon film are subjected to chemical reaction to obtain the second flat film.
Etching the first flat film and the second flat film by adopting a photoetching process, wherein the etching process comprises the following steps: forming a photoresist pattern on the side of the second flat film, which faces away from the substrate, wherein the photoresist pattern comprises phenolic resin; and etching the second flat film and the first flat film to obtain a first flat layer and a second flat layer which are sequentially positioned on the substrate.
Optionally, the material of the hydroxyl modifier comprises one of formic acid, acetic acid and hexamethyldisilazane.
Optionally, after the second flat film and the first flat film are etched, the method for preparing the substrate further includes: and stripping the photoresist pattern.
Optionally, after the photoresist pattern is stripped, the method for preparing the substrate further includes: and forming a light-emitting device on the side of the second flat layer, which faces away from the substrate.
In a second aspect, a substrate is provided, which is prepared by the method for preparing a substrate according to the first aspect.
Optionally, the size of the first via is smaller than the size of the second via, and the edge of the second via close to the first via corresponding to the second via exceeds the edge of the first via close to the second via corresponding to the first via.
In a third aspect, a display device is provided, which comprises the substrate of the second aspect.
Compared with the case that the hardness of the first flat film is the same as that of the second flat film, the substrate and the manufacturing method thereof and the display device provided by the embodiment of the invention have the advantages that the hardness of the first flat film closer to the substrate is larger than that of the second flat film, and if the first through hole is formed in the first flat film, the total time length for etching the second flat film and the first flat film is increased inevitably. Therefore, the etching time of the second flat film with lower hardness is increased, the slope angle (the included angle between the side wall and the horizontal direction) of the finally formed second via hole is smaller than that of the prior art, and if the conductive film layers such as the routing lines are formed on the side, away from the substrate, of the second flat layer, the problem of line breakage of the conductive film layers in the second via hole can be improved, so that the display effect of the display device is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present invention;
FIG. 2 is a flow chart of a substrate fabrication process according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a process for fabricating a substrate according to an embodiment of the present invention;
FIG. 4a is a diagram illustrating a process of fabricating a substrate according to an embodiment of the present invention;
FIG. 4b is a diagram illustrating a process of fabricating a substrate according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a process for fabricating a substrate according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating a process for fabricating a substrate according to an embodiment of the present invention;
FIG. 7 is a flow chart illustrating a process for forming a first planar film according to an embodiment of the present invention;
FIG. 8 is a reaction scheme of a first organosilicon film with a double bond modifier according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a substrate according to an embodiment of the invention.
Reference numerals:
1-a frame; 2-a display panel; 3-a circuit board; 4-cover plate; 11-a first flat film; 12-a second flat film; 13-photoresist; 131-a photoresist pattern; 14-a thin film transistor; 15-a light emitting device; 151-first electrode; 152-a light emitting functional layer; 153-a second electrode; 21-a first planar layer; 22-second planar layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The display device may be used as a mobile phone, a tablet computer, a Personal Digital Assistant (PDA), a vehicle-mounted computer, etc., and the specific application of the display device is not particularly limited in the embodiments of the present invention.
As shown in fig. 1, the display device may include, for example, a frame 1, a display panel 2, a circuit board 3, a cover plate 4, and other electronic components including a camera and the like.
Taking the light emitting direction of the display panel 2 as top emission as an example, the frame 1 may be a U-shaped frame, and the display panel 2 and the circuit board 3 are disposed in the frame 1. The cover plate 4 is arranged on the light emitting side of the display panel 2, and the circuit board 3 is arranged on the side of the display panel 2 departing from the cover plate 4.
The display panel 2 may be, for example, an OLED display panel, a Light Emitting diode (Micro-LED) display panel, a Quantum Dot Light Emitting Diodes (QLED) display panel, or a liquid crystal display panel.
The display panel 2 includes an array substrate and a counter substrate.
The embodiment of the invention provides a preparation method of a substrate, which can be used for preparing the array substrate and the opposite substrate.
As shown in fig. 2, the method for manufacturing a substrate can be implemented by the following steps:
s11, as shown in fig. 3, a first flat film 11 and a second flat film 12 are formed on a substrate 10 in this order, and the hardness of the first flat film 11 is greater than that of the second flat film 12.
In some embodiments, the first flat film 11 is used to form the first flat layer in step S12, and the second flat film 12 is used to form the second flat layer in step S12.
The first and second planarization layers constitute a planarization layer that planarizes the substrate.
In some embodiments, the thicknesses of the first and second flat films 11 and 12 are not limited as long as the sum of the thicknesses of the first and second flat films 11 and 12 is within the above-described thickness range of the flat layer.
The thickness of the first flat film 11 and the thickness of the second flat film 12 may be the same or different.
In some embodiments, the material of the first flat film 11 and the second flat film 12 is not limited.
Alternatively, the material of the first and second flat films 11 and 12 may be, for example, resin to deposit a large thickness for the planarization.
S12, as shown in fig. 4a and 4b, etching the second flat film 12 and the first flat film 11 by using a photolithography process to obtain a first flat layer 21 and a second flat layer 22 sequentially disposed on the substrate 10; the first planarization layer 21 includes a first via, and the second planarization layer 22 includes a second via, and an orthographic projection of at least a portion of the second via on the substrate 10 overlaps with an orthographic projection of the first via on the substrate 10.
In some embodiments, the second via corresponds to the first via one to one, and the orthographic projection of the second via and the first via corresponding thereto on the substrate 10 overlaps; or, the number of the second vias is greater than that of the first vias, and the orthographic projection of a part of the second vias on the substrate 10 overlaps with the orthographic projection of the first vias on the substrate 10.
Here, if the second via holes correspond to the first via holes one to one, and the orthographic projections of the second via holes and the corresponding first via holes on the substrate 10 are overlapped, etching the second flat film 12 and the first flat film 11 by using a photolithography process may include: as shown in fig. 5 and 6, forming a photoresist 13 on the side of the second flat film 12 away from the substrate 10, and exposing and developing the photoresist 13 to form a photoresist pattern 131; then, the second flat film 12 and the first flat film 11 are etched.
If the orthographic projection of a portion of the second via on the substrate 10 overlaps the orthographic projection of the first via on the substrate 10, the first planarization layer 21 and the second planarization layer 22 may be formed using a half exposure process.
In some embodiments, as shown in fig. 4a, the edge of the second via near the first via exceeds the edge of the first via near the second via; alternatively, as shown in fig. 4b, the edge of the second via hole close to the first via hole is exactly coincident with the edge of the first via hole close to the second via hole.
The embodiment of the present invention provides a method for manufacturing a substrate, in which, compared with the case where the hardness of the first flat film 11 is the same as that of the second flat film 12, by making the hardness of the first flat film 11 closer to the substrate 10 greater than that of the second flat film 12, if the first via hole is to be formed in the first flat film 11, the total time period for etching the second flat film 12 and the first flat film 11 is inevitably increased. Therefore, the etching time of the second flat film 12 with smaller hardness is increased, the slope angle (the included angle between the side wall and the horizontal direction) of the finally formed second via hole is smaller than that of the prior art, and if the conductive film layers such as the routing lines are formed on the side of the second flat layer 22 away from the substrate 10, the problem of line breakage of the conductive film layers in the second via hole can be improved, so as to improve the display effect of the display device.
Alternatively, the first flat film 11 and the second flat film 12 may be formed, as shown in fig. 7, specifically by the following steps:
and S121, forming a first organic silicon film on the substrate 10, wherein the material of the first organic silicon film comprises terminal hydroxyl.
S122, processing the first organic silicon film by using a double-bond modifier; the double bond modifier comprises carboxyl and double bonds, and the double bond modifier and the terminal hydroxyl in the first organic silicon film are subjected to esterification reaction to obtain a first flat film 11.
Here, the material of the first silicone film may be, for example, (R)3SiO1/2)n、(R2SiO2/2)n、(RSiO3/2)n、(SiO4/2)nAt least one of (1).
Wherein (R)3SiO1/2)nWith a Si-O skeleton of
(R2SiO2/2)nWith a Si-O skeleton of
(RSiO3/2)nWith a Si-O skeleton of
(SiO4/2)nWith a Si-O skeleton of
For example, as shown in FIG. 8, the material of the first organic silicon film is (RSiO)3/2)nFor example, (RSiO)3/2)nEsterification reaction with double bond modifier, the group of the double bond is (RSiO)3/2)nThe terminal hydroxyl groups and double bonds are mutually linked, and a more compact grid structure is formed.
In some embodiments, the material of the double bond modifier may include, for example, one of acrylic acid, methacrylic acid.
And S123, forming a second organic silicon film on the side, away from the substrate 10, of the first flat film 11, wherein the Si-O skeleton in the material of the second organic silicon film is the same as the Si-O skeleton in the material of the first organic silicon film.
Here, the second silicone film may be used as the second flat film 12 directly, or may be used as the second flat film 12 after being treated with a subsequent hydroxyl modifier.
In some embodiments, the material of the second silicone film may or may not be the same as the material of the first silicone film.
In the embodiment of the invention, the double bond modifier is used for processing the first organic silicon film to obtain the first flat film 11, and compared with the first organic silicon film, the first flat film 11 is more compact and has hardness greater than that of the first organic silicon film. The second silicone film can be directly used as the second flat film 12, in which since the Si — O skeleton of the second silicone film is the same as that of the first silicone film, the hardness of the materials of both is substantially the same. In this way, the hardness of the first flat film 11 is greater than that of the second flat film 12, so that the slope angle of the second via hole in the second flat layer 22 is smaller than that of the prior art.
Optionally, the second silicone film comprises hydroxyl groups; forming a second flat film 12, further comprising: treating the second organic silicon film by adopting a hydroxyl modifier; the hydroxyl modifier chemically reacts with the hydroxyl groups in the second silicone film to obtain a second flat film 12.
Optionally, the material of the hydroxyl modifier comprises one of formic acid, acetic acid and hexamethyldisilazane.
Illustratively, the second silicone film comprises
The materials of the hydroxyl modifier include COOH for example, and the hydroxyl in the second silicone film reacts with COOH to form:
the hydroxyl groups in the second flat film 12 obtained after the reaction were reduced.
The etching of the first flat film 11 and the second flat film 12 by using the photolithography process includes: forming a photoresist pattern 131 on a side of the second flat film 12 facing away from the substrate 10, the photoresist pattern 131 comprising a phenolic resin; the second flat film 12 and the first flat film 11 are etched to obtain a first flat layer 21 and a second flat layer 22 which are sequentially located on the substrate 10.
Here, the photoresist pattern 131 is obtained by exposing and developing the photoresist 13, and is not described in detail herein.
Since most of the photoresist patterns 131 include the phenolic resin, which has a relatively strong hydrophobicity, and the second silicone film includes a large amount of hydrophilic group hydroxyl groups, the difference between the surface tensions of the two groups is relatively large, which causes a problem of mutual exclusion. If the photoresist pattern 131 is formed directly on the side of the second silicone film away from the substrate 10, there is a problem that the photoresist pattern 131 cannot spread uniformly on the second flat layer 22, and a gap (gap) exists between the photoresist pattern 131 and the second flat layer 22 in a partial region (especially, an edge region where the photoresist overlaps with the second flat layer), so that when the second flat film 12 and the first flat film 11 are etched, the photoresist pattern 131 cannot protect the second flat film 12, and thus, the portion of the second flat film 12 and the first flat film 11, which should not be etched, is etched by mistake.
Based on this, in the embodiment of the present invention, the second silicone film is treated with the hydroxyl modifier, so as to reduce the number of hydroxyl groups in the second silicone film, so as to weaken the hydrophilicity of the second flat film 12, thereby enhancing the adhesion between the second flat layer 22 and the photoresist pattern 131, and improving the problem that the portions, which should not be etched, of the second flat film 12 and the first flat film 11 are erroneously etched, so as to improve the flatness of the surface of the second flat layer 22 on the side away from the substrate 10.
Optionally, as shown in fig. 4a and 4b, after etching the second flat film 12 and the first flat film 11, the method for preparing the substrate further includes: the photoresist pattern 131 is stripped.
On this basis, the preparation method of the substrate further comprises the following steps: as shown in fig. 9, the light emitting device 15 is formed on the side of the second planarization layer 22 facing away from the substrate 10. That is, the substrate serves as an array substrate.
Among them, the light emitting device 15 includes a first electrode 151, a light emitting function layer 152, and a second electrode 153. The first electrode 151 is an anode, and the second electrode 153 is a cathode; alternatively, the first electrode 151 is a cathode and the second electrode 153 is an anode.
If the display panel 2 is an OLED display panel, the light-emitting functional layer 152 is an organic light-emitting functional layer; if the display panel 2 is a QLED display panel, the light-emitting functional layer 152 is a quantum dot light-emitting functional layer.
In addition, the substrate further includes a pixel circuit layer disposed between the first planarization layer 21 and the substrate 10. The pixel circuit layer includes a thin film transistor 14, a storage capacitor, and the like.
When self-luminous display panels such as OLED display panels and QLED display panels are manufactured, the requirement on the flatness of the flat layer (i.e., the second flat layer of the present invention) directly below the light emitting devices 15 is very high, and the flatness should be usually less than 0.1 μm, so as to avoid the problem that the lengths of the micro-cavities in the plurality of light emitting devices 15 are different due to the poor flatness of the flat layer, thereby affecting the light extraction efficiency of the self-luminous display panels.
In the embodiment of the invention, since the second planarization layer 22 is obtained by processing the hydroxyl modifier, compared with the prior art, the surface of the second planarization layer 22 away from the substrate 10 is flatter, and therefore, the light emitting device 15 is disposed on the second planarization layer 22 of the embodiment of the invention, which can improve the problem of poor light emitting efficiency of the self-luminous display panel.
Embodiments of the present invention provide a substrate, as shown in fig. 4a and 4b, prepared by the method for preparing a substrate according to any one of the foregoing embodiments.
The base plate comprises a substrate 10, a first flat layer 21 and a second flat layer 22 which are sequentially arranged on the substrate 10, wherein the hardness of the first flat layer 21 is greater than that of the second flat layer 22. The first planarization layer 21 includes a first via, and the second planarization layer 22 includes a second via, and an orthographic projection of at least a portion of the second via on the substrate 10 overlaps with an orthographic projection of the first via on the substrate 10.
In some embodiments, the thicknesses of the first and second planarization layers 21 and 22 are not limited as long as the sum of the thicknesses of the first and second planarization layers 21 and 22 is within the above-described thickness range of the planarization layer.
The thickness of the first planarization layer 21 and the thickness of the second planarization layer 22 may be the same or different.
In some embodiments, the material of the first and second flat layers 21 and 22 is not limited.
Alternatively, the material of the first and second planarization layers 21 and 22 may be, for example, resin, to be deposited with a large thickness for planarization.
In some embodiments, the second via corresponds to the first via one to one, and the orthographic projection of the second via and the first via corresponding thereto on the substrate 10 overlaps; or, the number of the second vias is greater than that of the first vias, and the orthographic projection of a part of the second vias on the substrate 10 overlaps with the orthographic projection of the first vias on the substrate 10.
In some embodiments, the edge of the second via hole near the first via hole exceeds the edge of the first via hole near the second via hole; or the edge of the second via hole close to the first via hole is just coincided with the edge of the first via hole close to the second via hole.
The embodiment of the present invention provides a substrate, which is prepared by the method for preparing a substrate according to any one of the foregoing embodiments, and compared with the case where the hardness of the first flat film 11 is the same as that of the second flat film 12, the embodiment of the present invention increases the total time period for etching the second flat film 12 and the first flat film 11 inevitably by making the hardness of the first flat film 11 closer to the substrate 10 greater than that of the second flat film 12 in order to form the first via hole in the first flat film 11. Therefore, the etching time of the second flat film 12 with smaller hardness is increased, the slope angle (the included angle between the side wall and the horizontal direction) of the finally formed second via hole is smaller than that of the prior art, and if the conductive film layers such as the routing lines are formed on the side of the second flat layer 22 away from the substrate 10, the problem of line breakage of the conductive film layers in the second via hole can be improved, so as to improve the display effect of the display device.
Optionally, as shown in fig. 4a, as shown, the size of the first via is smaller than the size of the second via, and an edge of the second via close to the first via corresponding to the second via exceeds an edge of the first via close to the second via corresponding to the first via.
In the embodiment of the invention, the step can be formed between the first via hole and the second via hole by enabling the edge of the second via hole close to the first via hole corresponding to the second via hole to exceed the edge of the first via hole close to the second via hole corresponding to the first via hole, so as to further buffer the conductive film layer and improve the problem of broken line of the conductive film layer in the second via hole.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A method of preparing a substrate, comprising:
sequentially forming a first flat film and a second flat film on a substrate, wherein the hardness of the first flat film is greater than that of the second flat film;
etching the second flat film and the first flat film by adopting a photoetching process to obtain a first flat layer and a second flat layer which are sequentially arranged on the substrate; the first flat layer comprises a first via hole, the second flat layer comprises a second via hole, and the orthographic projection of at least part of the second via hole on the substrate is overlapped with the orthographic projection of the first via hole on the substrate;
wherein forming the first and second flat films comprises:
forming a first organic silicon film on the substrate, wherein the material of the first organic silicon film comprises a terminal hydroxyl group;
treating the first organic silicon film by using a double-bond modifier; the double bond modifier comprises carboxyl and double bonds, and the double bond modifier and the terminal hydroxyl in the first organic silicon film are subjected to esterification reaction to obtain a first flat film;
and forming a second organic silicon film on the side of the first flat film, which is far away from the substrate, wherein the Si-O skeleton in the material of the second organic silicon film is the same as the Si-O skeleton in the material of the first organic silicon film.
2. The method of claim 1, wherein the material of the double bond modifier comprises one of acrylic acid and methacrylic acid.
3. The method for producing a substrate according to claim 1 or 2, wherein the second silicone film includes a hydroxyl group;
forming a second flat film, further comprising:
treating the second organic silicon film by using a hydroxyl modifier; the hydroxyl modifier and the hydroxyl in the second organic silicon film are subjected to chemical reaction to obtain a second flat film;
etching the first flat film and the second flat film by adopting a photoetching process, wherein the etching process comprises the following steps:
forming a photoresist pattern on the side of the second flat film, which faces away from the substrate, wherein the photoresist pattern comprises phenolic resin;
and etching the second flat film and the first flat film to obtain a first flat layer and a second flat layer which are sequentially positioned on the substrate.
4. The method according to claim 3, wherein a material of the hydroxyl modifier includes one of formic acid, acetic acid, and hexamethyldisilazane.
5. The method of claim 3, wherein after the etching of the second flat thin film and the first flat thin film, the method further comprises:
and stripping the photoresist pattern.
6. The method of claim 5, further comprising, after the stripping the photoresist pattern:
and forming a light-emitting device on the side of the second flat layer, which faces away from the substrate.
7. A substrate produced by the method for producing a substrate according to any one of claims 1 to 6.
8. The substrate of claim 7, wherein a size of a first via is smaller than a size of a second via, the second via being closer to an edge of the first via corresponding thereto beyond an edge of the first via closer to the second via corresponding thereto.
9. A display device comprising the substrate according to claim 7 or 8.
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| CN111341822B (en) * | 2020-03-16 | 2023-04-18 | 合肥鑫晟光电科技有限公司 | Display substrate, preparation method thereof, display panel and display device |
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| JP6165686B2 (en) * | 2014-07-31 | 2017-07-19 | 信越化学工業株式会社 | Sealing material with supporting substrate, post-sealing semiconductor element mounting substrate, post-sealing semiconductor element forming wafer, semiconductor device, and manufacturing method of semiconductor device |
| CN104218094B (en) * | 2014-08-28 | 2016-11-23 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), display base plate and display device |
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