CN110783670A

CN110783670A - Communication device, dielectric waveguide filter and capacitive coupling bandwidth adjusting method thereof

Info

Publication number: CN110783670A
Application number: CN201911024486.1A
Authority: CN
Inventors: 谢懿非; 丁海; 林显添
Original assignee: Comba Telecom Technology Guangzhou Ltd
Current assignee: Comba Telecom Technology Guangzhou Ltd
Priority date: 2019-10-25
Filing date: 2019-10-25
Publication date: 2020-02-11
Also published as: WO2021077505A1

Abstract

The invention relates to a communication device, a dielectric waveguide filter and a capacitive coupling bandwidth adjusting method thereof. One surface of the dielectric block is provided with a capacitive coupling through hole and two spaced frequency debugging holes. The capacitive coupling via is located between the two frequency tuning holes. The metal layer on the surface of the dielectric block is provided with a non-circular closed gap ring, the closed gap ring is arranged around the periphery of the capacitive coupling through hole, and the closed gap ring is a closed gap ring. Make the capacitive coupling bandwidth meet the demands through the girth of the closed breach ring of adjustment non-circular ring form, need not to reduce the coupling bandwidth through reducing the ring width D of the annular breach ring like tradition, the ring width D of the closed breach ring of non-closed can accomplish bigger size (for example more than 0.4mm or 0.6 mm), the equipment production and processing of being convenient for, production efficiency is higher, also can avoid because the short circuit defect when the ring width is less, the practicality is higher.

Description

Communication device, dielectric waveguide filter and capacitive coupling bandwidth adjusting method thereof

Technical Field

The invention relates to the technical field of filters, in particular to a communication device, a dielectric waveguide filter and a capacitive coupling bandwidth adjusting method thereof.

Background

The dielectric waveguide filter improves the air filling form of the traditional waveguide filter into the filling of a high-dielectric-constant ceramic material, the ceramic dielectric material plays a role in transmitting signals and structurally supporting, and the metal material is attached to the surface of the ceramic dielectric material and serves as an electric wall to play a role in electromagnetic shielding. The dielectric waveguide filter is a microwave filter which adopts a dielectric waveguide resonant cavity to obtain the frequency-selecting function through multi-stage coupling. The surface of the dielectric waveguide filter is covered with a metal layer, and the electromagnetic wave is confined in the dielectric body to form standing wave oscillation.

As shown in fig. 1, a conventional dielectric waveguide filter includes a dielectric body 40, two resonant cavities are disposed on the dielectric body 40, and a through hole 42 is disposed between the two resonant cavities. A metal layer 46 is disposed on the outer surface of the dielectric body 40, the walls of the resonant cavity, and the walls of the through holes 42. Generally, the metal layer 46 of the dielectric body 40 is provided with an annular gap 44 circumferentially disposed around the opening portion of the through hole 42, and the width D of the annular gap 44 is adjusted to adjust the capacitive coupling bandwidth accordingly. The smaller the width D of the annular gap 44, the smaller the capacitive coupling bandwidth. However, in practice, for example, when a capacitive coupling bandwidth of 30MHZ is realized, the width D of the annular gap 44 is only about 0.15mm, and the width D of the annular gap 44 is too small to be processed by the prior art. Even if the method can be realized, short circuit risk is easily caused, the practicability is almost completely avoided, the production difficulty is high, and the production efficiency is low.

Disclosure of Invention

Therefore, it is necessary to overcome the defects of the prior art, and provide a communication device, a dielectric waveguide filter and a method for adjusting a capacitive coupling bandwidth thereof, which can facilitate production and manufacturing when the capacitive coupling bandwidth of a product is small, reduce the production difficulty, increase the production efficiency, and increase the practicability.

The technical scheme is as follows: a dielectric waveguide filter comprising: the capacitive coupling device comprises a dielectric block, a first frequency modulation hole and a second frequency modulation hole, wherein a capacitive coupling through hole and the two spaced frequency modulation holes are formed in one surface of the dielectric block; the metal layer is arranged on the outer surface of the dielectric block and on the wall of the capacitive coupling through hole and the wall of the frequency debugging hole, a non-circular closed notch ring is arranged on the metal layer on the surface of the dielectric block, and the closed notch ring is arranged on the periphery of the capacitive coupling through hole in a surrounding mode.

Compared with the traditional circular notch ring wound around the periphery of the capacitive coupling through hole, the non-circular closed notch ring has a longer perimeter, and the longer the perimeter, the smaller the corresponding capacitive coupling bandwidth. Therefore, when the product design of the dielectric waveguide filter with the small capacitive coupling bandwidth is performed, the dielectric waveguide filter is adopted, the capacitive coupling bandwidth meets the requirement by adjusting the perimeter of the non-circular closed notch ring, the coupling bandwidth does not need to be reduced by reducing the ring width D of the circular notch ring as in the traditional method, the ring width D of the non-closed notch ring can be larger (for example, more than 0.4mm or 0.6 mm), the production and processing of equipment are facilitated, the production efficiency is high, the short circuit defect caused by the small ring width can be avoided, and the practicability is high.

In one embodiment, the closed notched ring includes two or more non-closed notched rings, and the ends of the non-closed notched rings are sequentially communicated to enclose the closed notched ring.

In one embodiment, the non-enclosing notched rings are all disposed around the capacitive coupling via.

In one embodiment, the non-enclosed notched rings include a first non-enclosed notched ring, a second non-enclosed notched ring, and a third non-enclosed notched ring, and the first non-enclosed notched ring, the second non-enclosed notched ring, and the third non-enclosed notched ring are sequentially spaced apart in a direction away from the coupling via.

In one embodiment, the number of the first non-closed notched rings is two, the number of the second non-closed notched rings is four, and the number of the third non-closed notched rings is two;

two ends of the first non-closed type notch ring are correspondingly communicated with one ends of two second non-closed type notch rings respectively, and the other ends of the two second non-closed type notch rings are correspondingly communicated with one ends of two third non-closed type notch rings respectively; the first, second, and third non-enclosed notched rings cooperate to form the enclosed notched ring.

In one embodiment, the first, second and third non-enclosed notched rings are all non-enclosed notched rings; the two first non-closed notch rings are symmetrically arranged about the axis of the capacitive coupling through hole, the four second non-closed notch rings are symmetrically arranged about the axis of the capacitive coupling through hole, and the two third non-closed notch rings are symmetrically arranged about the axis of the capacitive coupling through hole; the two first non-closed type gap rings are coaxially arranged, the four second non-closed type gap rings are coaxially arranged, and the two third non-closed type gap rings are coaxially arranged.

In one embodiment, the closed notched ring comprises a first closed notched ring and one or more fourth non-closed notched rings; the first closed type gap ring is communicated with the fourth non-closed type gap ring, and the first closed type gap is arranged around the circumference of the capacitive coupling through hole; the fourth non-closed type gap is arranged around the periphery of the first closed type gap ring; alternatively, the first and second electrodes may be,

the closed type notch ring comprises a second closed type notch ring and more than one fifth non-closed type notch ring; the second closed type gap ring is communicated with the fifth non-closed type gap ring, and the second closed type gap is arranged around the circumference of the capacitive coupling through hole; the fifth non-enclosed notched ring is disposed in a region between the second enclosed notched ring and the capacitive coupling via.

In one embodiment, the closed notched ring includes an elongated notched section and two or more sixth non-closed notched rings, and the two or more sixth non-closed notched rings are communicated through the elongated notched section and cooperate to form the closed notched ring.

In one embodiment, the number of the sixth non-closed type notched rings is two, two or more elongated notch sections arranged in series are connected between one end of one of the sixth non-closed type notched rings and one end of the other sixth non-closed type notched ring, and two or more elongated notch sections arranged in series are connected between the other end of one of the sixth non-closed type notched rings and the other end of the other sixth non-closed type notched ring; one of the frequency modulation holes forms a dielectric resonator corresponding to one part of the dielectric block, the other frequency modulation hole forms another dielectric resonator corresponding to the other part of the dielectric block, and the lengthened notch section is positioned between the two dielectric resonators.

In one embodiment, the number of the elongated notch sections is two or more, the elongated notch sections and the sixth non-closed notch rings are alternately arranged, and two adjacent sixth non-closed notch rings are connected through the elongated notch sections.

In one embodiment, the sixth non-closed notch ring is a non-closed notch ring, and the elongated notch section is a broken line shaped notch section, an arc shaped notch section or a wave shaped notch section.

In one embodiment, the capacitive coupling through hole is a straight through hole with a constant diameter; or, the capacitive coupling through hole is a tapered through hole; or, one part of the capacitive coupling through hole is a straight through hole with a constant diameter, and the other part of the capacitive coupling through hole is a tapered through hole; or, the area around the capacitive coupling through hole sinks on the surface of the dielectric block, and the closed notch ring is arranged in the sinking area on the surface of the dielectric block.

A capacitive coupling bandwidth adjusting method of a dielectric waveguide filter comprises the following steps: the circumference of the closed notch ring is adjusted to enable the capacitive coupling bandwidth to meet the requirement.

Compared with the traditional circular gap ring wound around the periphery of the capacitive coupling through hole, the capacitive coupling bandwidth adjusting method has the advantages that the non-circular closed gap ring has a longer perimeter, and the longer the perimeter, the smaller the corresponding capacitive coupling bandwidth. Therefore, when the product design of the dielectric waveguide filter with the small capacitive coupling bandwidth is performed, the dielectric waveguide filter is adopted, the capacitive coupling bandwidth meets the requirement by adjusting the perimeter of the non-circular closed notch ring, the coupling bandwidth does not need to be reduced by reducing the ring width D of the circular notch ring as in the traditional method, the ring width D of the non-closed notch ring can be larger (for example, more than 0.4mm or 0.6 mm), the production and processing of equipment are facilitated, the production efficiency is high, the short circuit defect caused by the small ring width can be avoided, and the practicability is high.

A communication device comprises the dielectric waveguide filter.

The communication device comprises the dielectric waveguide filter, so that the technical effect of the communication device is brought by the dielectric waveguide filter, and the beneficial effect of the communication device is the same as that of the dielectric waveguide filter, and is not repeated.

Drawings

Fig. 1 is a schematic top view of a conventional dielectric waveguide filter;

fig. 2 is a schematic bottom view of a dielectric waveguide filter according to an embodiment of the present invention;

FIG. 3 is a cross-sectional structural view of the embodiment of FIG. 2 at A-A;

FIG. 4 is a cross-sectional structural view of another embodiment of FIG. 2 at A-A;

FIG. 5 is a cross-sectional structural view of the further embodiment of FIG. 2 at A-A;

FIG. 6 is a schematic cross-sectional view of yet another embodiment of FIG. 2 at A-A;

fig. 7 is a schematic top view of a dielectric waveguide filter according to an embodiment of the present invention;

fig. 8 is a schematic top view of a dielectric waveguide filter according to an embodiment of the present invention;

fig. 9 is a schematic top view of a dielectric waveguide filter according to another embodiment of the present invention;

fig. 10 is a schematic top view of a dielectric waveguide filter according to another embodiment of the present invention;

fig. 11 is a schematic top view of a dielectric waveguide filter according to another embodiment of the present invention;

fig. 12 is a schematic top view of a dielectric waveguide filter according to another embodiment of the present invention;

fig. 13 is a schematic top view of a dielectric waveguide filter according to still another embodiment of the present invention;

fig. 14 is a schematic top view of a dielectric waveguide filter according to still another embodiment of the present invention;

fig. 15 is a schematic top view of a dielectric waveguide filter according to still another embodiment of the present invention;

fig. 16 is a schematic top view of a dielectric waveguide filter according to a conventional embodiment;

fig. 17 is a graph showing an S-parameter of a dielectric waveguide filter according to a conventional embodiment;

fig. 18 is a schematic top view of a dielectric waveguide filter according to an embodiment of the present invention;

FIG. 19 is a graph showing S-parameter curve when d is 0.3mm in a dielectric waveguide filter (8-cavity double zero) according to an embodiment of the present invention;

FIG. 20 is a graph showing S-parameter curve when d is 0.4mm in a dielectric waveguide filter (8-cavity double zero) according to an embodiment of the present invention;

fig. 21 is a graph showing an S-parameter curve of a dielectric waveguide filter (10-cavity double zero) according to an embodiment of the present invention;

fig. 22 is a graph showing an S-parameter curve of a dielectric waveguide filter (10-cavity double zero) according to an embodiment of the present invention.

Reference numerals:

10. a dielectric block; 11. a capacitive coupling via; 12. a frequency tuning hole; 13. a sinking area; 20. a metal layer; 21. a body layer; 211. an open area; 212. a recess; 22. a first metal strip; 23. a first connecting bar; 24. a second metal strip; 25. a second connecting strip; 251. a first boundary line; 252. a second boundary line; 26. a metal ring; 27. a third metal strip; 28. a third connecting strip; 29. a convex portion; 30. a closed type notch ring; 31. a first non-enclosing notched ring; 32. a second non-enclosing notched ring; 33. a third non-enclosed notched ring; 34. a first closed-type notch ring; 35. a fourth non-enclosing notched ring; 36. a second closed-type notch ring; 37. a fifth non-closed notched ring; 38. lengthening the notch section; 39. a sixth non-enclosing notched ring.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the description of the present invention, it should be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" to another element, there are no intervening elements present.

In one embodiment, referring to fig. 2 to 15, a dielectric waveguide filter includes a dielectric block 10 and a metal layer 20. One surface of the dielectric block 10 is provided with a capacitive coupling through hole 11 and two spaced frequency debugging holes 12. The capacitive coupling via 11 is located between two of the frequency tuning holes 12. The metal layer 20 is disposed on the outer surface of the dielectric block 10 and on the walls of the capacitive coupling through hole 11 and the frequency tuning hole 12. The metal layer 20 on the surface of the dielectric block 10 is provided with a non-circular closed notch ring 30. The closed notch ring 30 is disposed around the periphery of the capacitive coupling via 11.

The closed-type notch ring 30 includes an annular notch ring (for example, an annular notch 44 illustrated in fig. 1) and a non-annular notch ring. The non-circular ring-shaped notch ring refers to a pattern other than the circular ring-shaped notch ring in the closed notch ring 30, and includes, for example, the patterns illustrated in fig. 6 to 14, and also includes, for example, a polygonal ring (a triangular ring, a square ring, a pentagonal ring, and the like) and at least one non-closed notch ring additionally connected thereto, and also includes, for example, an irregular ring formed by sequentially connecting a plurality of notches (each notch may be arc-shaped, linear, wave-shaped, and the like) in fig. 12 to 14.

The metal layer 20 at the closed notch ring 30 is removed to expose the wall surface of the dielectric block 10, and of course, the metal layer 20 may not be plated or sprayed on the wall surface of the dielectric block 10 corresponding to the closed notch ring 30, so as to expose the wall surface of the dielectric block 10.

It should be explained that the two ends of the closed type notch ring 30 are connected to each other, and the metal layer 20 corresponding to the side wall of one end of the capacitive coupling through hole 11 and the metal layer 20 on the surface of the dielectric block 10 can be completely isolated from each other. On the contrary, the non-enclosed type notched ring has two opposite ends, and the two opposite ends of the non-enclosed type notched ring 30 have a space therebetween and are not communicated with each other, and the metal layer 20 at the space electrically connects the metal layer 20 corresponding to the sidewall of one end of the capacitive coupling via 11 with the metal layer 20 on the surface of the dielectric block 10.

It should be explained that the two ends of the closed type notch ring 30 are connected to each other, and the metal layer 20 corresponding to the side wall of one end of the capacitive coupling through hole 11 and the metal layer 20 on the surface of the dielectric block 10 can be completely isolated from each other. On the contrary, the non-closed type notch ring is provided with two opposite ends, and the two opposite ends of the non-closed type notch ring are spaced and are not communicated with each other.

It should be noted that the non-closed type notch ring refers to one section of a circular notch ring (such as the annular notch 44 illustrated in fig. 1).

Compared with the traditional circular notch ring wound around the periphery of the capacitive coupling through hole 11, the non-circular closed notch ring 30 of the dielectric waveguide filter has a longer circumference, and the longer the circumference, the smaller the corresponding capacitive coupling bandwidth. Therefore, when the product design of the dielectric waveguide filter with the small capacitive coupling bandwidth is performed, the dielectric waveguide filter is adopted, the capacitive coupling bandwidth meets the requirement by adjusting the perimeter of the non-circular closed notch ring 30, the coupling bandwidth does not need to be reduced by reducing the ring width D of the circular notch ring as in the traditional method, the ring width D of the non-closed notch ring 30 can be larger (for example, more than 0.4mm or 0.6 mm), the production and processing of equipment are facilitated, the production efficiency is high, the short circuit defect caused by the small ring width can be avoided, and the practicability is high.

In one embodiment, referring to fig. 7 and 8, the closed-type notched ring 30 includes more than two non-closed-type notched rings. The ends of the non-closed type notch rings are sequentially communicated to form the closed type notch ring 30.

Further, the non-closed notched rings are all disposed around the capacitive coupling via 11.

Further, the non-closed type notched rings include a first non-closed type notched ring 31, a second non-closed type notched ring 32, and a third non-closed type notched ring 33, and the first non-closed type notched ring 31, the second non-closed type notched ring 32, and the third non-closed type notched ring 33 are sequentially disposed at intervals in a direction away from the coupling via.

Therefore, the arrangement of the non-closed type gap rings is compact, the non-closed type gap rings can be arranged in a small area region, the non-closed type gap rings can be arranged at a position between two dielectric resonators, and a demetallization (silver removing layer) region is not placed in an effective cavity region as much as possible, so that the insertion loss damage can be reduced, and the influence on the insertion loss is small.

In one embodiment, referring to fig. 7 and 8, there are two first non-closed notched rings 31, four second non-closed notched rings 32, and two third non-closed notched rings 33. Both ends of the first non-closed type notched ring 31 are respectively and correspondingly communicated with one ends of two of the second non-closed type notched rings 32, and the other ends of the two second non-closed type notched rings 32 are respectively and correspondingly communicated with one ends of two third non-closed type notched rings 33; the first non-closed notched ring 31, the second non-closed notched ring 32, and the third non-closed notched ring 33 cooperate to form the closed notched ring 30.

In one embodiment, the first, second and third non-enclosing notched

rings

31, 32, 33 are all non-enclosing notched rings. Two of the first non-closed notch rings 31 are symmetrically disposed about the axis of the capacitive coupling through hole 11, four of the second non-closed notch rings 32 are symmetrically disposed about the axis of the capacitive coupling through hole 11, and two of the third non-closed notch rings 33 are symmetrically disposed about the axis of the capacitive coupling through hole 11. Two of the first non-closed notch rings 31 are coaxially disposed, four of the second non-closed notch rings 32 are coaxially disposed, and two of the third non-closed notch rings 33 are coaxially disposed.

Therefore, the closed type notch ring 30 is regular in shape, batch processing and production can be facilitated, production difficulty is reduced, and production efficiency is improved.

As a specific example, referring to fig. 7 and 8, the metal layer 20 on the surface of the dielectric block 10 includes a body layer 21, two first metal strips 22, two first connecting strips 23, two second metal strips 24, and two second connecting strips 25. The body layer 21 is provided with an open area 211 around the capacitive coupling via 11. The first metal strip 22, the first connecting strip 23, the second metal strip 24 and the second connecting strip 25 are located in the opening region 211.

The two first metal strips 22 are respectively wound on two opposite sides of the orifice of the capacitive coupling through hole 11, the end portions of the two first metal strips 22 are arranged at intervals, the two second metal strips 24 are respectively wound on two opposite sides of the orifice of the capacitive coupling through hole 11, and the end portions of the two second metal strips 24 are arranged at intervals.

The two first metal strips 22 and the two first connecting strips 23 are arranged correspondingly, and the middle part of the first metal strip 22 is connected with the main body layer 21 after the first connecting strip 23 passes through the interval between the end parts of the two second metal strips 24.

The two second metal strips 24 and the two second connecting strips 25 are arranged correspondingly, and the middle part of the second metal strip 24 is electrically connected with the metal layer 20 on the hole wall of the capacitive coupling through hole 11 after the second connecting strip 25 passes through the interval between the end parts of the two first metal strips 22.

The two second metal strips 24, the two first connecting strips 23 and the mouth wall of the opening area 211 cooperate to form two first non-closed notched rings 31. The two first metal strips 22, the two second metal strips 24, the two first connecting strips 23 and the two second connecting strips 25 cooperate to form four second non-closed notched rings 32. The two first metal strips 22, the two second connecting strips 25 and the mouth walls of the capacitive coupling through holes 11 cooperate to form two third non-closed notched rings 33.

Both ends of the first non-closed type notched ring 31 are respectively in corresponding communication with one ends of two of the second non-closed type notched rings 32, and the other ends of the two second non-closed type notched rings 32 are respectively in corresponding communication with one ends of two third non-closed type notched rings 33. The first non-closed notched ring 31, the second non-closed notched ring 32, and the third non-closed notched ring 33 cooperate to form the closed notched ring 30.

Further, referring to fig. 7 and 8, the first metal strip 22 and the second metal strip 24 are arc-shaped strips coaxially disposed with the capacitive coupling through hole 11, and an arc radius of the first metal strip 22 is smaller than that of the second metal strip 24. The two first metal strips 22 are symmetrically arranged about the axis of the capacitive coupling through hole 11, and the two second metal strips 24 are symmetrically arranged about the axis of the capacitive coupling through hole 11. Therefore, the closed notch ring 30 is symmetrical and regular in structure, batch processing and production can be facilitated, production difficulty is reduced, and production efficiency is improved.

Further, referring to fig. 8, the second connecting bar 25 is fan-shaped, a line connecting one side of the second connecting bar 25 to the axis of the capacitive coupling through hole 11 is a first boundary line 251, and a line connecting the other side of the second connecting bar 25 to the axis of the capacitive coupling through hole 11 is a second boundary line 252. The angle between the first boundary line 251 and the second boundary line 252 is a, and 0 ° < a <180 °. Thus, the lengths of the second non-closed notched ring 32 and the third non-closed notched ring 33 can be changed by adjusting the angle a between the first boundary line 251 and the second boundary line 252, and the circumference of the closed notched ring 30 can be correspondingly changed, so as to adjust the capacitive coupling bandwidth, wherein when the angle a changes, the width and the width of the capacitive coupling bandwidth change correspondingly. Specifically, as a increases, the perimeter of the closed notched ring 30 becomes smaller, and the corresponding capacitive coupling bandwidth becomes larger. Where a may be 30 °, 45 °, 60 °, 95 °, 120 °, or other angles for adjusting the capacitive coupling bandwidth.

Further, referring to fig. 7 and 8, the metal layer 20 on the surface of the dielectric block 10 further includes a metal ring 26 disposed circumferentially around the capacitive coupling via 11. The metal ring 26 is electrically connected to the metal layer 20 on the wall of the capacitive coupling via 11, and the metal ring 26 is further electrically connected to the second connecting bar 25. In this way, the metal ring 26 is disposed at the periphery of the capacitive coupling through hole 11, and is equivalent to a reference object, and the metal layer 20 in the region other than the reference object is etched with reference to the reference object during the processing, so that the metal layer 20 in the region inside the metal ring 26 (i.e. the hole wall of the capacitive coupling through hole 11) can be prevented from being etched during the processing, and thus, the production efficiency and the product quality can be ensured. Alternatively, the metal ring 26 may be completely removed.

In another embodiment, the closed notched ring 30 includes a first closed notched ring 34 and one or more fourth non-closed notched rings 35; the first closed type cutaway ring 34 is communicated with the fourth non-closed type cutaway ring 35, and the first closed type cutaway ring 34 is disposed around the circumference of the capacitive coupling through hole 11; the fourth non-closed type notch ring 35 is provided around the periphery of the first closed type notch ring 34.

Specifically, the first closed-type notch ring 34 is, for example, a closed-type notch ring, and the fourth open-type notch ring 35 is, for example, an open-type notch ring. Further, the fourth non-closing notched rings 35 are, for example, one, two, three, four, five, or other numbers.

As a specific example, referring to fig. 2, 9 and 10, the metal layer 20 on the surface of the dielectric block 10 includes a body layer 21, two or more third metal strips 27 and two or more third connecting strips 28. The main body layer 21 is provided with an opening region 211 surrounding the capacitive coupling via 11, and the third metal strip 27 and the third connection strip 28 are both located in the opening region 211.

More than two the third metal strip 27 is in proper order around the circumference setting of capacitive coupling through-hole 11 at interval, more than two the third metal strip 27 with more than two the third connecting strip 28 one-to-one sets up, the middle part position of third metal strip 27 pass through the third connecting strip 28 with the main part layer 21 links to each other.

The more than two third metal strips 27 are matched with the opening wall of the capacitive coupling through hole 11 to form a first closed type gap ring 34, the more than two third metal strips 27, the more than two third connecting strips 28 and the opening wall of the opening area 211 are matched to form more than two fourth non-closed type gap rings 35, and the fourth non-closed type gap rings 35 are communicated with the first closed type gap ring 34 and are matched to form the closed type gap rings.

Specifically, the metal layer 20 on the surface of the dielectric block 10 further includes a metal ring 26 circumferentially disposed around the capacitive coupling via 11, and two or more third metal strips 27 are sequentially disposed at intervals circumferentially around the metal ring 26. Thus, the metal ring 26 is disposed at the periphery of the capacitive coupling through hole 11, which is equivalent to a reference object, and the metal layer 20 in the area inside the metal ring 26 (i.e. the hole wall of the capacitive coupling through hole 11) is prevented from being etched away in the processing process, thereby ensuring the production efficiency and the product quality. Alternatively, the metal ring 26 may be completely removed.

In yet another embodiment, referring to fig. 2, 11 and 12, the closed notched ring 30 includes a second closed notched ring 36 and one or more fifth non-closed notched rings 37; the second closed-type notched ring 36 is in communication with the fifth non-closed-type notched ring 37, and the second closed-type notched ring 36 is disposed around the circumference of the capacitive coupling through-hole 11; the fifth non-closing notched ring 37 is provided in a region between the second closing notched ring 36 and the capacitive coupling via 11.

Specifically, the second closed-type notched ring 36 is, for example, a closed-type notched ring, and the fifth non-closed-type notched ring 37 is, for example, a non-closed-type notched ring. Further, the fifth non-closing notched rings 37 are, for example, one, two, three, four, five, or other numbers.

Specifically, the metal layer 20 on the surface of the dielectric block 10 includes a main body layer 21, two or more third metal strips 27, and two or more third connecting strips 28. The main body layer 21 is provided with an opening region 211 surrounding the capacitive coupling via 11, and the third metal strip 27 and the third connection strip 28 are both located in the opening region 211.

More than two the third metal strip 27 winds the circumference setting of capacitive coupling through-hole 11 at interval in proper order, more than two the third metal strip 27 with more than two the third connecting strip 28 one-to-one sets up, the middle part position of third metal strip 27 passes through the third connecting strip 28 with the metal level 20 of the pore wall of capacitive coupling through-hole 11 links to each other.

Two or more third metal strips 27 are matched with the opening wall of the opening region 211 to form a second closed type notched ring 36, and two or more third metal strips 27, two or more third connecting strips 28 and the opening wall of the capacitive coupling through hole 11 are matched to form two or more fifth non-closed type notched rings 37. The fifth non-closed type notched ring 37 communicates with the second closed type notched ring 36 and cooperates to form the closed type notched ring 30.

Specifically, also, the metal layer 20 of the surface of the dielectric block 10 further includes a metal ring 26 circumferentially disposed around the capacitive coupling via 11. The principle is similar to that of the above embodiments, and is not described in detail.

Further, referring to fig. 9 to 12, 3 third metal strips 27 illustrated in fig. 9 and 11 and 4 third metal strips 27 illustrated in fig. 10 and 12 are provided. The third metal strips 27 are arc-shaped strips coaxially arranged with the capacitive coupling through holes 11, and the number of the third metal strips 27 is two, three, four, five or other numbers.

In still another embodiment, referring to fig. 2, 13 to 15, the closed notched ring 30 includes an elongated notched section 38 and two or more sixth non-closed notched rings 39, and the two or more sixth non-closed notched rings 39 are communicated with each other through the elongated notched section 38 and cooperate to form the closed notched ring 30.

In one embodiment, there are two sixth non-closed notched rings 39, two or more elongated notch sections 38 arranged in series are connected between one end of one sixth non-closed notched ring 39 and one end of the other sixth non-closed notched ring 39, and two or more elongated notch sections 38 arranged in series are connected between the other end of one sixth non-closed notched ring 39 and the other end of the other sixth non-closed notched ring 39; one of the frequency tuning holes 12 forms a dielectric resonator corresponding to one portion of the dielectric block 10, the other frequency tuning hole 12 forms another dielectric resonator corresponding to the other portion of the dielectric block 10, and the elongated notch section 38 is located between the two dielectric resonators.

Further, the number of the elongated notch sections 38 is two or more, the elongated notch sections 38 and the sixth non-closed notch rings 39 are alternately arranged, and two adjacent sixth non-closed notch rings 39 are connected through the elongated notch sections 38.

Further, the sixth non-closed notch ring 39 is a non-closed notch ring, and the lengthened notch section 38 is a broken line shaped notch section, an arc shaped notch section or a wave shaped notch section.

As a specific example, the metal layer 20 on the surface of the dielectric block 10 includes a main body layer 21 and one or more protrusions 29. The main body layer 21 is provided with an opening region 211 surrounding the capacitive coupling through hole 11, and the convex part 29 is connected with the metal layer 20 on the wall of the capacitive coupling through hole 11. The opening wall of the opening region 211 is provided with a recess 212 for avoiding the protrusion 29. An elongated notch section 38 is formed between the convex portion 29 and the concave portion 212, and two or more sixth non-closed notch rings 39 are formed between the opening wall of the opening region 211 and the hole wall of the capacitive coupling through hole 11. The sixth non-closing notched ring 39 communicates with and cooperates with the elongated notched section 38 to form the closing notched ring 30.

In this manner, lengthening the notched segments 38 enables the perimeter of the closed notched ring 30 to be greater than the perimeter of the conventional annular notch 44, thereby enabling a reduction in the capacitive coupling bandwidth to some extent without reducing the capacitive coupling bandwidth by reducing the width d of the lengthened notched segments 38 and reducing the width d of the sixth non-closed notched ring 39. In addition, the length of the lengthened notch section 38 is adjusted by controlling the length of the convex part 29, so that the capacitive coupling bandwidth is adjusted. In addition, the circumference of the closed notched ring 30 can also be adjusted and controlled accordingly by controlling the number of the protrusions 29, and as the number of the protrusions 29 is larger, the length of the corresponding lengthened notch section 38 is longer, the circumference of the closed notched ring 30 is longer, and the capacitive coupling bandwidth is smaller.

Specifically, the metal layer 20 on the surface of the dielectric block 10 also includes a metal ring 26 circumferentially disposed around the capacitive coupling via 11, and the metal ring 26 is electrically connected to the protrusion 29. The principle is similar to that of the above embodiments, and is not described in detail.

Further, referring to fig. 14, one side of the hole wall of the capacitive coupling through hole 11 is provided with a plurality of protrusions 29 at intervals, and the other side of the hole wall of the capacitive coupling through hole 11 is provided with a plurality of protrusions 29 at intervals. One of the frequency tuning holes 12 forms one dielectric resonator corresponding to one portion of the dielectric block 10, the other frequency tuning hole 12 forms another dielectric resonator corresponding to the other portion of the dielectric block 10, and the convex portion 29 is located at a position between the two dielectric resonators. Therefore, on one hand, the closed notch ring 30 has a longer perimeter, which is beneficial to reducing the capacitive coupling bandwidth; on the other hand, the demetallization (silver removal layer) area is not placed in the effective cavity area as much as possible, so that the insertion loss damage can be reduced, and the influence on the insertion loss is small.

Further, referring to fig. 15, a plurality of protrusions 29 are disposed at equal intervals on the periphery of the hole wall of the capacitive coupling via 11. Thus, the larger the number of projections 29, the longer the circumference of the closed notched ring 30 can be achieved, which is advantageous in reducing the capacitive coupling bandwidth. For example, the convex portions 29 illustrated in fig. 14 are 9, and 9 convex portions 29 are provided at intervals, respectively located in 9 concave portions 212, and have a gear shape as a whole.

It should be noted that the closed-type notched ring 30 may be in a regular or irregular pattern, a symmetrical pattern, or an asymmetrical pattern.

In one embodiment, referring to fig. 2 to 6, the capacitive coupling via 11 is a through hole with a constant diameter; or, the capacitive coupling through hole 11 is a tapered through hole; or, one part of the capacitive coupling through hole 11 is a straight through hole with a constant diameter, and the other part of the capacitive coupling through hole is a tapered through hole; or, the area around the capacitive coupling through hole 11 on the surface of the dielectric block 10 sinks, and the closed notch ring 30 is disposed in the sinking area 13 on the surface of the dielectric block 10. The specific shape of the capacitive coupling via 11 is various, and may be varied arbitrarily, and is not limited to the shape shown in fig. 2 to 6, and may be other shapes, and is not limited herein.

In one embodiment, a method for adjusting a capacitive coupling bandwidth of a dielectric waveguide filter according to any one of the above embodiments includes the steps of: the capacitive coupling bandwidth is made satisfactory by adjusting the perimeter of the closed notched ring 30. Specifically, the longer the perimeter of the closed notched ring 30, the smaller the capacitive coupling bandwidth; the shorter the perimeter of the closed notched ring 30, the greater the capacitive coupling bandwidth.

Compared with the traditional circular notched ring wound around the periphery of the capacitive coupling through hole 11, the non-circular closed notched ring 30 has a longer perimeter, and the longer the perimeter, the smaller the corresponding capacitive coupling bandwidth. Therefore, when the product design of the dielectric waveguide filter with the small capacitive coupling bandwidth is performed, the dielectric waveguide filter is adopted, the capacitive coupling bandwidth meets the requirement by adjusting the perimeter of the non-circular closed notch ring 30, the coupling bandwidth does not need to be reduced by reducing the ring width D of the circular notch ring as in the traditional method, the ring width D of the non-closed notch ring 30 can be larger (for example, more than 0.4mm or 0.6 mm), the production and processing of equipment are facilitated, the production efficiency is high, the short circuit defect caused by the small ring width can be avoided, and the practicability is high.

In addition, the diameter of the capacitive coupling through hole 11 is also one of the ways to adjust the capacitive coupling bandwidth, and the larger the aperture of the capacitive coupling through hole 11 is, the wider the coupling bandwidth is. Further, the capacitive coupling bandwidth is improved by adjusting the aperture of the capacitive coupling via 11.

In one embodiment, a communication device comprises a dielectric waveguide filter as described in any of the above embodiments.

Referring to fig. 16 and 17, the dielectric waveguide filter illustrated in fig. 16 is an 8-cavity double-zero dielectric filter, and fig. 17 illustrates an S-parameter diagram of a conventional dielectric waveguide filter.

Firstly, under the original technical condition, the 3.5G index is realized, the specific frequency band is 3400 MHz-3600 MHz, and capacitive coupling is added between a cavity 1 and a cavity 4. The capacitive coupling between cavity 1 and cavity 4 is now-26 MHz, resulting in a parasitic coupling of-33 MHz from cavity 2 to cavity 4, while a harmonic frequency of 117dB is generated at 1814 MHz. As shown in fig. 17, the left and right zeros are quite unbalanced, differing by up to 47 dB. At this time, the annular width of the annular notch 44 is 0.15mm, and the annular notch can hardly be processed under practical process conditions and has a short circuit risk.

Referring to fig. 18 to 22 again, fig. 18 illustrates a structural diagram of the dielectric waveguide filter according to the present embodiment, fig. 19 illustrates an S-parameter graph when the ring width d of the closed notch ring 30 in the dielectric waveguide filter (8-cavity double zero) according to the present embodiment is controlled to be 0.3mm, and fig. 20 illustrates an S-parameter graph when the ring width d of the closed notch ring 30 in the dielectric waveguide filter (8-cavity double zero) according to the present embodiment is controlled to be 0.4 mm.

Two example products corresponding to figures 19 and 20 are compared to a conventional product corresponding to figure 17,

harmonic frequency points:

the harmonic frequency points at the near end in fig. 19 can be further away from the passband, and 1660MHz is 118 dB.

The harmonic frequency points at the near end in fig. 20 may be further away from the passband, 1548MHz 118 dB.

Whereas the conventional scheme, 1814MHz ═ 117 dB.

2 zero balance degree:

in fig. 19, the capacitive coupling between cavity 1 and cavity 4 is-27 MHz, resulting in a parasitic coupling of-26 MHz between cavity 2 and cavity 4, with a 32dB difference. In fig. 20, the capacitive coupling between cavity 1 and cavity 4 is-27 MHz, resulting in a parasitic coupling of-8 MHz between cavity 2 and cavity 4, with a 13dB difference.

Referring to fig. 21 and 22 again, fig. 21 shows the S-parameter of the capacitive coupling between the 1 cavity and the 4 cavity of the dielectric waveguide filter (10-cavity double zero), and fig. 22 shows the S-parameter of the capacitive coupling between the 7 cavity and the 8 cavity of the dielectric waveguide filter (10-cavity double zero).

Harmonic frequency points:

the harmonic frequency points at the near end in fig. 21 may be further away from the passband, 1520 MHz-147 dB.

The harmonic frequency points at the near end in fig. 22 can be further away from the passband, 136dB for 1952 MHz.

Zero balance degree:

the capacitive coupling between the 1 and 4 cavities of the dielectric waveguide filter is illustrated in fig. 21, and it can be seen from fig. 21 that the two zeros are 15dB apart from each other, in this case, high on the left and low on the right.

The capacitive coupling between the 7 and 8 cavities of the dielectric waveguide filter is illustrated in fig. 22, and it can be seen from fig. 22 that the two zeros are 11dB apart from each other, i.e., low on the left and high on the right.

In summary, compared with the conventional dielectric waveguide filter using the annular notch 44, the dielectric waveguide filter of the present embodiment has a significant advantage. When the product design of the dielectric waveguide filter with small capacitive coupling bandwidth is performed, the capacitive coupling bandwidth meets the requirement by adjusting the perimeter of the non-circular closed notch ring 30, the coupling bandwidth does not need to be reduced by reducing the ring width D of the circular notch ring as in the conventional method, the ring width D of the non-closed notch ring 30 can be larger (for example, more than 0.4mm or 0.6 mm), the production and processing of equipment are facilitated, the production efficiency is high, the short circuit defect caused by the small ring width can be avoided, and the practicability is high.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. A dielectric waveguide filter, comprising:

the capacitive coupling device comprises a dielectric block, a first frequency modulation hole and a second frequency modulation hole, wherein a capacitive coupling through hole and the two spaced frequency modulation holes are formed in one surface of the dielectric block;

the metal layer is arranged on the outer surface of the dielectric block and on the wall of the capacitive coupling through hole and the wall of the frequency debugging hole, a non-circular closed notch ring is arranged on the metal layer on the surface of the dielectric block, and the closed notch ring is arranged on the periphery of the capacitive coupling through hole in a surrounding mode.

2. The dielectric waveguide filter according to claim 1, wherein the closed-type notch ring includes two or more non-closed-type notch rings, and ends of the non-closed-type notch rings are sequentially connected to enclose the closed-type notch ring.

3. A dielectric waveguide filter according to claim 2, wherein the non-enclosing notched rings are each disposed around the capacitive coupling via.

4. The dielectric waveguide filter according to claim 3, wherein the open-ended notch rings include a first open-ended notch ring, a second open-ended notch ring, and a third open-ended notch ring, and the first open-ended notch ring, the second open-ended notch ring, and the third open-ended notch ring are sequentially disposed at intervals in a direction away from the coupling via.

5. The dielectric waveguide filter according to claim 4, wherein the first non-closed notched ring is two, the second non-closed notched ring is four, and the third non-closed notched ring is two;

6. The dielectric waveguide filter according to claim 4, wherein the first, second, and third non-enclosed notched rings are all non-enclosed notched rings; the two first non-closed notch rings are symmetrically arranged about the axis of the capacitive coupling through hole, the four second non-closed notch rings are symmetrically arranged about the axis of the capacitive coupling through hole, and the two third non-closed notch rings are symmetrically arranged about the axis of the capacitive coupling through hole; the two first non-closed type gap rings are coaxially arranged, the four second non-closed type gap rings are coaxially arranged, and the two third non-closed type gap rings are coaxially arranged.

7. The dielectric waveguide filter of claim 1, wherein the closed-ended gapped ring includes a first closed-ended gapped ring and one or more fourth open-ended gapped rings; the first closed type gap ring is communicated with the fourth non-closed type gap ring, and the first closed type gap is arranged around the circumference of the capacitive coupling through hole; the fourth non-closed type gap is arranged around the periphery of the first closed type gap ring; alternatively, the first and second electrodes may be,

8. The dielectric waveguide filter according to claim 1, wherein the closed-type notched ring includes an elongated notched section and two or more sixth non-closed-type notched rings, and the two or more sixth non-closed-type notched rings are connected by the elongated notched section and cooperate to form the closed-type notched ring.

9. The dielectric waveguide filter according to claim 8, wherein there are two sixth non-closed notched rings, and two or more elongated notch sections arranged in series are connected between one end of one of the sixth non-closed notched rings and one end of the other of the sixth non-closed notched rings, and two or more elongated notch sections arranged in series are connected between the other end of one of the sixth non-closed notched rings and the other end of the other of the sixth non-closed notched rings; one of the frequency modulation holes forms a dielectric resonator corresponding to one part of the dielectric block, the other frequency modulation hole forms another dielectric resonator corresponding to the other part of the dielectric block, and the lengthened notch section is positioned between the two dielectric resonators.

10. The dielectric waveguide filter according to claim 8, wherein the number of the elongated notch sections is two or more, the elongated notch sections and the sixth open-ended notch rings are alternately arranged, and adjacent two of the sixth open-ended notch rings are connected by the elongated notch sections.

11. A dielectric waveguide filter according to any one of claims 8 to 10, wherein the sixth open-ended notch ring is an open-ended notch ring, and the elongated notch section is a polygonal notch section, an arc-shaped notch section, or a wave-shaped notch section.

12. A dielectric waveguide filter according to any one of claims 1 to 10 wherein the capacitive coupling via is a through hole of constant diameter; or, the capacitive coupling through hole is a tapered through hole; or, one part of the capacitive coupling through hole is a straight through hole with a constant diameter, and the other part of the capacitive coupling through hole is a tapered through hole; or, the area around the capacitive coupling through hole sinks on the surface of the dielectric block, and the closed notch ring is arranged in the sinking area on the surface of the dielectric block.

13. A method for tuning the capacitive coupling bandwidth of a dielectric waveguide filter according to any one of claims 1 to 12, comprising the steps of: the circumference of the closed notch ring is adjusted to enable the capacitive coupling bandwidth to meet the requirement.

14. A communication apparatus comprising a dielectric waveguide filter according to any one of claims 1 to 12.