CN110783668B - Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof - Google Patents
Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof Download PDFInfo
- Publication number
- CN110783668B CN110783668B CN201910970153.1A CN201910970153A CN110783668B CN 110783668 B CN110783668 B CN 110783668B CN 201910970153 A CN201910970153 A CN 201910970153A CN 110783668 B CN110783668 B CN 110783668B
- Authority
- CN
- China
- Prior art keywords
- hole
- coupling hole
- dielectric
- dielectric block
- capacitive coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention relates to a communication device, a dielectric waveguide filter and a capacitance coupling adjusting method thereof. One surface of the dielectric block is provided with a capacitive coupling hole and two frequency debugging holes at intervals. And an inductive coupling hole is also formed in the outer surface of the dielectric block, and the capacitive coupling hole and the inductive coupling hole are both located between the two frequency debugging holes. The size of capacitive coupling can be adjusted through the inductive coupling hole, the problem that the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block is too small can be solved, the grinding allowance reserved at the bottom of the dielectric block can be reduced when the dielectric block is formed, the grinding workload of the dielectric block is greatly reduced, and the processing efficiency is improved; in addition, the deformation of pressing and sintering is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, the long-term reliability is better, and the method is favorable for batch production and automatic debugging.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a communication device, a dielectric waveguide filter and a capacitance coupling adjusting method thereof.
Background
With the rapid development of a communication system entering the 5G era, the miniaturization of a device is the key for the development of communication equipment of the device, a miniaturized, high-performance and low-power-consumption filter is the key for the miniaturization of the 5G equipment, and the dielectric waveguide filter has all the characteristics of the miniaturization of the 5G equipment, so that the dielectric waveguide filter has a wide application prospect in the 5G communication equipment, and a design method of the dielectric waveguide filter becomes a hot point of research.
The dielectric waveguide filter improves the air filling form of the traditional waveguide filter into the filling of a high-dielectric-constant ceramic material, the ceramic dielectric material plays a role in transmitting signals and structurally supporting, and the metal material is attached to the surface of the ceramic dielectric material and serves as an electric wall to play a role in electromagnetic shielding. Among them, the traditional dielectric waveguide filter realizes several ways of capacitive coupling including: deep blind hole mode, through hole mode and blind groove mode. The dielectric waveguide filters adopting the capacitive coupling modes have the problems of high processing difficulty and inconvenient debugging, are poor in batch performance, and also increase the difficulty for subsequent automatic debugging.
Disclosure of Invention
Therefore, it is necessary to overcome the defects of the prior art, and provide a communication device, a dielectric waveguide filter and a capacitance coupling adjustment method thereof, which can reduce the processing difficulty, facilitate production and manufacture, facilitate debugging and realize mass production.
The technical scheme is as follows: a dielectric waveguide filter comprising: the frequency modulation device comprises a dielectric block, a capacitor coupling hole and two frequency modulation holes which are spaced are arranged on one surface of the dielectric block, one of the frequency modulation holes forms a dielectric resonator corresponding to one part of the dielectric block, the other frequency modulation hole forms another dielectric resonator corresponding to the other part of the dielectric block, an inductor coupling hole is further arranged on the outer surface of the dielectric block, the capacitor coupling hole and the inductor coupling hole are both positioned between the two frequency modulation holes, and the frequency modulation hole and the inductor coupling hole are both blind holes; and the metal layer covers the outer surface of the dielectric block and the hole walls of the capacitive coupling hole, the frequency debugging hole and the inductive coupling hole.
According to the dielectric waveguide filter, the capacitive coupling hole and the inductive coupling hole are formed between the two frequency debugging holes, the stronger the inductive coupling of the inductive coupling hole is, the weaker the capacitive coupling of the two dielectric resonators is, and the weaker the coupling of the inductive coupling hole is, the stronger the capacitive coupling of the two dielectric resonators is, so that the capacitive coupling can be adjusted by adjusting the diameter and the depth of the blind hole of the inductive coupling hole, the capacitive coupling can be reduced without increasing the depth of the deep blind hole in the traditional manner, the defect that the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block is too small can be well avoided, the grinding allowance reserved at the bottom of the dielectric block can be reduced during molding, the grinding workload of the dielectric block is greatly reduced, and the processing efficiency is improved; in addition, the gap between the bottom wall of the deep blind hole and the bottom surface of the dielectric block is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, and the long-term reliability is better; the adjustment is convenient, and the batch production and the automatic debugging are facilitated.
In one embodiment, the inductive coupling hole and the capacitive coupling hole are formed on the same surface of the dielectric block; or the inductive coupling hole and the capacitive coupling hole are formed on two opposite surfaces of the dielectric block; or the inductive coupling hole is formed on one surface of the dielectric block adjacent to the surface where the capacitive coupling hole is located.
In one embodiment, the aperture shape of the inductive coupling hole is square, polygonal, circular or elliptical; or, the inductive coupling hole is a tapered blind hole or a cylindrical blind hole.
In one embodiment, the capacitive coupling hole is a blind hole.
In one embodiment, a groove corresponding to the capacitive coupling hole is formed in the surface, back to the capacitive coupling hole, of the dielectric block, and the metal layer further covers the wall of the groove.
In one embodiment, the depth of the blind hole of the capacitive coupling hole is smaller than the depth of the blind hole of the frequency tuning hole.
In one embodiment, a gap between the bottom wall of the capacitive coupling hole and a surface of the dielectric block facing away from the capacitive coupling hole is 0.1mm to 3 mm.
In one embodiment, the capacitive coupling hole is a straight-through hole with a constant aperture, the straight-through hole penetrates through two opposite surfaces of the dielectric block, a metal layer on the surface of the dielectric block is provided with a non-closed annular notch, and the non-closed annular notch is arranged around the circumference of the straight-through hole.
In one embodiment, the capacitive coupling hole is a stepped through hole, the stepped through hole penetrates through two opposite surfaces of the dielectric block, the stepped through hole comprises a first through hole and a second through hole which are coaxially arranged and are communicated with each other, the diameter and the depth of the first through hole are both larger than those of the second through hole, a metal layer on the surface of the dielectric block is provided with a closed annular notch, and the closed annular notch is arranged around the circumference of the second through hole.
A capacitance coupling adjusting method of a dielectric waveguide filter comprises the following steps: when the capacitance coupling amount of the two dielectric resonators needs to be reduced, the inductance coupling amount of the inductance coupling hole is increased.
According to the method for adjusting the capacitive coupling of the dielectric waveguide filter, the capacitive coupling hole and the inductive coupling hole are arranged between the two frequency adjusting holes, the stronger the inductive coupling of the inductive coupling hole is, the weaker the capacitive coupling of the two dielectric resonators is, and the weaker the coupling of the inductive coupling hole is, the stronger the capacitive coupling of the two dielectric resonators is, so that the size of the capacitive coupling can be adjusted by adjusting the diameter of the blind hole of the inductive coupling hole and the depth of the blind hole, the capacitive coupling is not required to be reduced by increasing the depth of the deep blind hole in the traditional manner, the defect that the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block is too small can be well avoided, the grinding allowance reserved at the bottom of the dielectric block during forming can be reduced, the grinding workload of the dielectric block is greatly reduced, and the processing efficiency is improved; in addition, the gap between the bottom wall of the deep blind hole and the bottom surface of the dielectric block is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, and the long-term reliability is better; the adjustment is convenient, and the batch production and the automatic debugging are facilitated.
In one embodiment, the method for increasing the inductive coupling amount of the inductive coupling hole is as follows: increasing a distance between the inductive coupling hole and the capacitive coupling hole; and/or, increasing the diameter of the inductive coupling aperture; and/or increasing the hole depth of the inductive coupling hole.
A communication device comprises the dielectric waveguide filter.
The communication device comprises the dielectric waveguide filter, so that the technical effect of the communication device is brought by the dielectric waveguide filter, and the communication device has the same beneficial effect as the dielectric waveguide filter, and is not repeated.
Drawings
Fig. 1 is a front view of a dielectric waveguide filter according to an embodiment of the present invention;
fig. 2 is a top view of a dielectric waveguide filter according to an embodiment of the present invention;
3 FIG. 3 3 3 is 3 a 3 cross 3- 3 sectional 3 view 3 of 3 one 3 embodiment 3 of 3 FIG. 3 1 3 at 3 A 3- 3 A 3; 3
FIG. 4 is a cross-sectional view of the embodiment of FIG. 2 at B-B;
FIG. 5 is a cross-sectional view of the embodiment of FIG. 2 at C-C;
FIG. 6 is a cross-sectional view of another embodiment of FIG. 2 at B-B;
FIG. 7 is a cross-sectional view of another embodiment of FIG. 2 at C-C;
fig. 8 is a top view of a dielectric waveguide filter according to another embodiment of the present invention;
FIG. 9 is a cross-sectional view of the embodiment of FIG. 8 at C-C;
fig. 10 is a top view of a dielectric waveguide filter according to yet another embodiment of the present invention;
FIG. 11 is a cross-sectional view of the further embodiment of FIG. 2 at B-B;
fig. 12 is a top view of a dielectric waveguide filter according to yet another embodiment of the present invention;
FIG. 13 is a cross-sectional view of yet another embodiment of FIG. 2 at B-B;
fig. 14 is a simulation diagram showing the relationship between the amount of capacitive coupling and the depth of the capacitive coupling hole of the conventional dielectric filter without adding the inductive coupling hole;
fig. 15 is a simulation diagram of a relationship between the capacitive coupling amount of the dielectric filter and the depth of the capacitive coupling hole according to an embodiment of the present invention.
Reference numerals:
10. a dielectric block; 11. a capacitive coupling aperture; 111. a first through hole; 112. a second through hole; 12. a frequency tuning hole; 13. a dielectric resonator; 14. an inductive coupling aperture; 15. a groove; 151. a notch; 16. a non-closed annular gap; 17. a closed annular gap; 20. a metal layer.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description of the present invention, it should be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" to another element, there are no intervening elements present.
The capacitive coupling hole of the traditional dielectric waveguide filter is described by taking a deep blind hole as an example, the gap between the bottom wall of the deep blind hole and the bottom surface of a dielectric body is very small, and a plurality of gaps are smaller than 1mm, so that the difficulty of ceramic processing and forming is high, the ceramic is easy to deform during pressing and sintering, the ceramic has a risk of fragmentation in the debugging process, the debugging work is inconvenient to carry out, and the long-term reliability is difficult to ensure.
In one embodiment, referring to fig. 1 to 5, a dielectric waveguide filter includes a dielectric block 10 and a metal layer 20. One surface of the dielectric block 10 is provided with a capacitive coupling hole 11 and two spaced frequency tuning holes 12. One of the frequency tuning holes 12 forms one dielectric resonator 13 corresponding to one portion of the dielectric block 10, and the other frequency tuning hole 12 forms another dielectric resonator 13 corresponding to the other portion of the dielectric block 10. The outer surface of the dielectric block 10 is also provided with an inductive coupling hole 14. The capacitive coupling hole 11 and the inductive coupling hole 14 are both located between the two frequency debugging holes 12, and the frequency debugging holes 12 and the inductive coupling hole 14 are both blind holes. The metal layer 20 covers the outer surface of the dielectric block 10 and the hole walls of the capacitive coupling hole 11, the frequency tuning hole 12 and the inductive coupling hole 14.
In the dielectric waveguide filter, the capacitive coupling hole 11 and the inductive coupling hole 14 are arranged between the two frequency debugging holes 12, the stronger the inductive coupling of the inductive coupling hole 14 is, the weaker the capacitive coupling of the two dielectric resonators 13 is, and the weaker the coupling of the inductive coupling hole 14 is, the stronger the capacitive coupling of the two dielectric resonators 13 is, so that the size of the capacitive coupling can be adjusted by adjusting the diameter R1 of the blind hole of the inductive coupling hole 14 and the depth H1 of the blind hole, and the size of the capacitive coupling can be adjusted by adjusting the distance between the inductive coupling hole 14 and the capacitive coupling hole 11, so that the capacitive coupling is not required to be reduced by increasing the depth of the deep blind hole as in the conventional method, thereby the defect that the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block 10 is too small can be well avoided, the grinding allowance reserved at the bottom of the dielectric block 10 during molding can be reduced, and the grinding workload of the dielectric block 10 is, the processing efficiency is improved; in addition, the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block 10 is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, and the long-term reliability is better; the adjustment is convenient, and the batch production and the automatic debugging are facilitated.
Alternatively, the dielectric block 10 is, for example, a ceramic dielectric block 10; the metal layer 20 is a copper layer, a silver layer, a gold layer, an aluminum layer, or the like.
In an embodiment, referring to any one of fig. 2 to 7, the inductive coupling hole 14 and the capacitive coupling hole 11 are formed on the same surface of the dielectric block 10.
In another embodiment, referring to fig. 8 and 9, the inductive coupling hole 14 and the capacitive coupling hole 11 may also be formed on two opposite surfaces of the dielectric block 10.
As an optional solution, the inductive coupling hole 14 may be opened and formed on a surface of the dielectric block 10 adjacent to the surface where the capacitive coupling hole 11 is located.
In one embodiment, referring to fig. 2 to 10, the shape of the inductive coupling hole 14 is not limited, and may be any shape, for example, the aperture shape of the inductive coupling hole 14 is square, polygonal, circular or elliptical. As another example, the inductive coupling hole 14 is a tapered blind hole or a cylindrical blind hole.
In one embodiment, referring to fig. 2 to 10, the capacitive coupling hole 11 is a blind hole. Specifically, the blind via depth H3 of the capacitive coupling hole 11 is smaller than the blind via depth H4 of the frequency tuning hole 12. Therefore, the problem that the gap H2 between the bottom wall of the capacitive coupling hole 11 and the bottom surface of the dielectric block 10 is too small can be well solved, the grinding allowance reserved at the bottom of the dielectric block 10 during molding can be reduced, the grinding workload of the dielectric block 10 is greatly reduced, and the processing efficiency is improved; in addition, the gap H2 between the bottom wall of the capacitive coupling hole 11 and the bottom surface of the dielectric block 10 is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, and the long-term reliability is better; the adjustment is convenient, and the batch production and the automatic debugging are facilitated.
Further, referring to fig. 6 and 7, a groove 15 corresponding to the position of the capacitive coupling hole 11 is formed on a surface of the dielectric block 10 facing away from the capacitive coupling hole 11, and the metal layer 20 is further covered on a groove wall of the groove 15.
Specifically, the recess 15 is a recess 15 extending from one side surface of the dielectric block 10 toward the other side surface, and an end notch 151 may be formed in one side surface thereof, or end notches 151 may be formed in both opposite side surfaces of the dielectric block 10.
Further, a gap H2 between the bottom wall of the capacitive coupling hole 11 and the surface of the dielectric block 10 facing away from the capacitive coupling hole 11 is 0.1mm to 3 mm. Specifically, a gap H2 between the bottom wall of the capacitive coupling hole 11 and the surface of the dielectric block 10 facing away from the capacitive coupling hole 11 is 0.3mm to 3 mm. More specifically, a gap H2 between the bottom wall of the capacitive coupling hole 11 and the surface of the dielectric block 10 facing away from the capacitive coupling hole 11 is 1mm to 2 mm. Therefore, when the gap H2 is large enough, the problem that the gap H2 between the bottom wall of the capacitive coupling hole 11 and the bottom surface of the dielectric block 10 is too small can be well solved, the grinding allowance reserved at the bottom of the dielectric block 10 during molding can be reduced, the grinding workload of the dielectric block 10 is greatly reduced, and the processing efficiency is improved; in addition, the gap H2 between the bottom wall of the capacitive coupling hole 11 and the bottom surface of the dielectric block 10 is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified.
In another embodiment, referring to fig. 11, the capacitive coupling hole 11 is a through hole with a constant aperture, the through hole penetrates through two opposite surfaces of the dielectric block 10, the metal layer 20 on the surface of the dielectric block 10 is provided with a non-enclosed annular gap 1617, and the non-enclosed annular gap 1617 is arranged around the circumference of the through hole.
In another embodiment, referring to fig. 1, fig. 2, fig. 12 and fig. 13, the capacitive coupling hole 11 is a stepped through hole, the stepped through hole penetrates through two opposite surfaces of the dielectric block 10, the stepped through hole includes a first through hole 111 and a second through hole 112 that are coaxially disposed and are mutually communicated, a diameter and a depth of the first through hole 111 are both greater than those of the second through hole 112, a metal layer 20 on a surface of the dielectric block 10 is provided with a closed annular gap 17, and the closed annular gap 17 is disposed around a circumferential direction of the second through hole 112.
Here, it should be explained that both ends of the closed annular gap 17 communicate with each other to form, for example, a closed form circular ring shape, a closed form square ring shape, or a closed form oval ring shape. Instead of the closed annular gap 1617 having two opposite ends, the two opposite ends of the open annular gap 1617 are spaced apart from each other and are not communicated with each other, that is, the open annular gap 1617 is, for example, a non-closed circular ring, a non-closed square ring, or a non-closed elliptical ring. In addition, the metal layer 20 is not laid at the closed annular gap 17 and the non-closed annular gap 1617, and the wall surface of the dielectric block 10 is exposed. Specifically, the metal layer 20 at the closed annular notch 17 and the non-closed annular notch 1617 is exposed on the wall surface of the dielectric block 10 by removing, but of course, the metal layer 20 may not be plated or sprayed on the wall surface of the dielectric block 10 corresponding to the closed annular notch 17 and the non-closed annular notch 1617, so as to expose the wall surface of the dielectric block 10.
The number of the capacitive coupling holes 11 between the two dielectric resonators 13 is generally 1, and 1 transmission zero point is realized. The number of the capacitive coupling holes 11 on the dielectric filter may be 1 or more than 1, and the number and the positions of the capacitive coupling holes 11 may be determined according to the number and the frequency of the transmission zeros actually required. Specifically, the number of the capacitive coupling holes 11 is equal to the number of transmission zeros of the dielectric filter. The two dielectric resonators 13 connected with each other at the position of the capacitive coupling hole 11 are determined according to the frequency of the transmission zero point of the dielectric filter.
Referring to fig. 14 and 15, fig. 14 is a simulation diagram of a relationship between a capacitive coupling amount of a conventional dielectric filter without adding the inductive coupling hole 14 and a depth of the capacitive coupling hole 11, and fig. 15 is a simulation diagram of a relationship between a capacitive coupling amount of a dielectric filter and a depth of the capacitive coupling hole 11 according to an embodiment of the present invention. As can be seen from fig. 14 and 15, under the condition that the depth of the capacitive coupling hole 11 is kept unchanged, the coupling bandwidth before the inductive coupling hole 14 is not added is-32 MHz, the coupling bandwidth after the inductive coupling hole 14 is added is-9 MHz, and the negative coupling amount is obviously reduced. As described above, the capacitive coupling hole 11 and the inductive coupling hole 14 are provided between the two frequency tuning holes 12, and specifically, the greater the inductive coupling in the inductive coupling hole 14, the weaker the capacitive coupling amount in the two dielectric resonators 13, and the weaker the coupling in the inductive coupling hole 14, the stronger the capacitive coupling amount in the two dielectric resonators 13. Therefore, the size of the capacitive coupling can be adjusted by adjusting the blind hole diameter R1 and the blind hole depth H1 of the inductive coupling hole 14, and the size of the capacitive coupling can also be adjusted by adjusting the distance between the inductive coupling hole 14 and the capacitive coupling hole 11, so that the capacitive coupling amount is not required to be reduced in a traditional manner of increasing the depth of the deep blind hole, the defect that the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block 10 is too small can be well overcome, the grinding allowance reserved at the bottom of the dielectric block 10 during molding can be reduced, the grinding workload of the dielectric block 10 is greatly reduced, and the processing efficiency is improved; in addition, the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block 10 is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, and the long-term reliability is better; the adjustment is convenient, and the batch production and the automatic debugging are facilitated.
In one embodiment, a method for adjusting capacitive coupling of a dielectric waveguide filter according to any one of the above embodiments includes the steps of: when it is necessary to reduce the amount of capacitive coupling of the two dielectric resonators 13, the amount of inductive coupling is increased by increasing the inductive coupling hole 14.
According to the method for adjusting the capacitive coupling of the dielectric waveguide filter, the capacitive coupling hole 11 and the inductive coupling hole 14 are arranged between the two frequency adjusting holes 12, the stronger the inductive coupling of the inductive coupling hole 14 is, the weaker the capacitive coupling of the two dielectric resonators 13 is, and the weaker the coupling of the inductive coupling hole 14 is, the stronger the capacitive coupling of the two dielectric resonators 13 is, so that the size of the capacitive coupling can be adjusted by adjusting the diameter R1 of the blind hole of the inductive coupling hole 14 and the depth H1 of the blind hole, the problem that the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block 10 is too small can be well solved, the grinding allowance reserved at the bottom of the dielectric block 10 during molding can be reduced, the grinding workload of the dielectric block 10 is greatly reduced, and the processing efficiency is improved; in addition, the gap H2 between the bottom wall of the deep blind hole and the bottom surface of the dielectric block 10 is enlarged, the pressing and sintering deformation is easier to control, and the process difficulty is simplified; in addition, the debugging is more convenient, the risk of cracking of a ceramic piece can not occur in the debugging process, and the long-term reliability is better; the adjustment is convenient, and the batch production and the automatic debugging are facilitated.
Further, the method for increasing the inductive coupling amount of the inductive coupling hole 14 includes:
increasing the distance between the inductive coupling hole 14 and the capacitive coupling hole 11; and/or
Increasing the diameter R1 of the inductive coupling aperture 14; and/or
The hole depth H1 of the inductive coupling hole 14 is increased.
In one embodiment, the resonant frequency of the resonator-like structure formed by the capacitive coupling hole 11 and the body around the capacitive coupling hole 11 can be adjusted by removing a part of the metal layer 20 in the capacitive coupling hole 11, so as to adjust the coupling amount between the dielectric resonators 13 on both sides of the capacitive coupling hole. By adjusting the size of the area where the metal layer 20 is removed in the capacitive coupling hole 11, the size of the coupling amount of the capacitive coupling between the two dielectric resonators 13 can be changed. Specifically, the area of the portion of the capacitive coupling hole 11 where the metal layer 20 is removed may be adjusted by polishing, which is not limited in the embodiment. The removed portion of the metal layer 20 may be located at an inner bottom or an inner side portion in the capacitive coupling hole 11, and may be one place or a plurality of discrete places.
In one embodiment, a communication device comprises a dielectric waveguide filter as described in any of the above embodiments.
The communication device comprises the dielectric waveguide filter, so that the technical effect of the communication device is brought by the dielectric waveguide filter, and the communication device has the same beneficial effect as the dielectric waveguide filter, and is not repeated.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A dielectric waveguide filter, comprising:
the frequency modulation device comprises a dielectric block, a capacitor coupling hole and two frequency modulation holes which are spaced are arranged on one surface of the dielectric block, one of the frequency modulation holes forms a dielectric resonator corresponding to one part of the dielectric block, the other frequency modulation hole forms another dielectric resonator corresponding to the other part of the dielectric block, an inductor coupling hole is further arranged on the outer surface of the dielectric block, the capacitor coupling hole and the inductor coupling hole are both positioned between the two frequency modulation holes, and the frequency modulation hole and the inductor coupling hole are both blind holes;
and the metal layer covers the outer surface of the dielectric block and the hole walls of the capacitive coupling hole, the frequency debugging hole and the inductive coupling hole, and when the capacitive coupling amount of the two dielectric resonators needs to be reduced, the inductive coupling amount of the inductive coupling hole is increased.
2. The dielectric waveguide filter of claim 1, wherein the inductive coupling hole and the capacitive coupling hole are formed on the same surface of the dielectric block; or the inductive coupling hole and the capacitive coupling hole are formed on two opposite surfaces of the dielectric block; or the inductive coupling hole is formed on one surface of the dielectric block adjacent to the surface where the capacitive coupling hole is located.
3. The dielectric waveguide filter according to claim 1, wherein the aperture shape of the inductive coupling hole is a square, a polygon, a circle, or an ellipse; or, the inductive coupling hole is a tapered blind hole or a cylindrical blind hole.
4. A dielectric waveguide filter according to claim 1, wherein the capacitive coupling holes are blind holes.
5. The dielectric waveguide filter of claim 4, wherein a groove corresponding to the capacitive coupling hole is formed in a surface of the dielectric block facing away from the capacitive coupling hole, and the metal layer covers a wall of the groove.
6. A dielectric waveguide filter according to claim 4, wherein the depth of the blind hole of the capacitive coupling hole is smaller than the depth of the blind hole of the frequency tuning hole.
7. A dielectric waveguide filter according to any one of claims 4 to 6 wherein the gap between the bottom wall of the capacitive coupling hole and the surface of the dielectric block facing away from the capacitive coupling hole is in the range 0.1mm to 3 mm.
8. A dielectric waveguide filter according to any one of claims 1 to 3, wherein the capacitive coupling hole is a through hole having a constant aperture, the through hole penetrates through opposite surfaces of the dielectric block, and the metal layer on the surface of the dielectric block is provided with an unsealed annular gap disposed around the circumference of the through hole.
9. The dielectric waveguide filter according to any one of claims 1 to 3, wherein the capacitive coupling hole is a stepped through hole, the stepped through hole penetrates through two opposite surfaces of the dielectric block, the stepped through hole includes a first through hole and a second through hole which are coaxially arranged and are communicated with each other, a diameter and a depth of the first through hole are both larger than those of the second through hole, a metal layer on the surface of the dielectric block is provided with a closed annular notch, and the closed annular notch is arranged around a circumferential direction of the second through hole.
10. A capacitance coupling adjustment method of a dielectric waveguide filter according to any one of claims 1 to 9,
the method for increasing the inductive coupling amount of the inductive coupling hole comprises the following steps:
increasing a distance between the inductive coupling hole and the capacitive coupling hole; and/or the presence of a gas in the gas,
increasing the diameter of the inductive coupling aperture; and/or the presence of a gas in the gas,
increasing the hole depth of the inductive coupling hole.
11. A communication apparatus comprising a dielectric waveguide filter according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910970153.1A CN110783668B (en) | 2019-10-12 | 2019-10-12 | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910970153.1A CN110783668B (en) | 2019-10-12 | 2019-10-12 | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110783668A CN110783668A (en) | 2020-02-11 |
| CN110783668B true CN110783668B (en) | 2021-02-09 |
Family
ID=69385207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910970153.1A Active CN110783668B (en) | 2019-10-12 | 2019-10-12 | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110783668B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN210468049U (en) * | 2019-09-02 | 2020-05-05 | 深圳顺络电子股份有限公司 | Capacitive coupling structure, dielectric filter, communication antenna and base station |
| CN211062834U (en) * | 2019-12-31 | 2020-07-21 | 江苏灿勤科技股份有限公司 | Dielectric filter and radio transceiver |
| CN111403864A (en) * | 2020-04-03 | 2020-07-10 | 京信射频技术(广州)有限公司 | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof |
| CN111509339B (en) * | 2020-06-12 | 2024-03-12 | 中国电子科技集团公司第二十六研究所 | Medium filter coupling conversion structure and communication equipment |
| CN111600100A (en) * | 2020-06-30 | 2020-08-28 | 瑞声精密制造科技(常州)有限公司 | Capacitive and inductive cross coupling structure and dielectric waveguide filter |
| CN112164855B (en) * | 2020-08-28 | 2022-07-01 | 深圳顺络电子股份有限公司 | Automatic debugging method and system for dielectric filter |
| CN116154443A (en) * | 2021-11-23 | 2023-05-23 | 华为技术有限公司 | Dielectric resonance unit, dielectric filter and frequency selection characteristic debugging method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008019307A2 (en) * | 2006-08-04 | 2008-02-14 | Dielectric Laboratories, Inc. | Wideband dielectric waveguide filter |
| US9077062B2 (en) * | 2012-03-02 | 2015-07-07 | Lockheed Martin Corporation | System and method for providing an interchangeable dielectric filter within a waveguide |
| CN109309272A (en) * | 2018-11-14 | 2019-02-05 | 苏州波发特电子科技有限公司 | A kind of capacitive coupling structure for dielectric filter |
| CN109461995B (en) * | 2018-12-27 | 2024-08-09 | 华为技术有限公司 | Waveguide filter adopting ceramic dielectric |
| CN110137638B (en) * | 2019-04-26 | 2021-05-11 | 摩比科技（深圳）有限公司 | Ceramic waveguide filter |
| CN110112518B (en) * | 2019-06-14 | 2020-11-27 | 广东国华新材料科技股份有限公司 | Dual-mode dielectric waveguide filter |
| CN110148819B (en) * | 2019-06-20 | 2024-03-26 | 京信通信技术(广州)有限公司 | Capacitive coupling structure of dielectric waveguide filter and dielectric waveguide filter |
-
2019
- 2019-10-12 CN CN201910970153.1A patent/CN110783668B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110783668A (en) | 2020-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110783668B (en) | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof | |
| CN107534197B (en) | Dielectric filter, transceiver and base station | |
| US9190700B2 (en) | Reduced size cavity filter for PICO base stations | |
| KR101891332B1 (en) | Dielectric filter, transceiver and base station | |
| WO2009128053A1 (en) | Suspended dielectric combline cavity filter | |
| CN108987863A (en) | A kind of double zero crossings coupling ceramic filters | |
| CN211062834U (en) | Dielectric filter and radio transceiver | |
| EP3079200A1 (en) | Resonator, filter, duplexer, multiplexer and communication device | |
| CN109167129B (en) | Resonator, port coupling device of dielectric waveguide filter and adjusting method thereof | |
| CN110336104A (en) | It is a kind of to bear the ceramic waveguide device coupled and its implementation for increasing | |
| CN106129550A (en) | Local medium loaded medium waveguide filter | |
| CN111403863A (en) | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof | |
| CN112563693A (en) | Dielectric filter | |
| CN209843916U (en) | Dielectric waveguide filter | |
| CN112072239A (en) | Dielectric filter and manufacturing method thereof | |
| CN110416669B (en) | Dielectric filter, signal transceiver and base station | |
| CN115483522A (en) | Metal resonator | |
| CN211150736U (en) | Capacitive coupling filter | |
| CN210074111U (en) | Negative coupling structure and dielectric filter | |
| CN111403864A (en) | Communication device, dielectric waveguide filter and capacitance coupling adjusting method thereof | |
| CN210182542U (en) | Dielectric filter, signal transmitting/receiving device and base station | |
| CN111384551B (en) | Dielectric filter and communication equipment | |
| CN211879572U (en) | Communication device and dielectric waveguide filter | |
| CN111478003A (en) | Capacitance coupling structure of dielectric waveguide filter | |
| CN112635937A (en) | Filter input/output structure and dielectric duplexer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |