CN110783486A - Display panel suitable for camera under screen - Google Patents
Display panel suitable for camera under screen Download PDFInfo
- Publication number
- CN110783486A CN110783486A CN201910959029.5A CN201910959029A CN110783486A CN 110783486 A CN110783486 A CN 110783486A CN 201910959029 A CN201910959029 A CN 201910959029A CN 110783486 A CN110783486 A CN 110783486A
- Authority
- CN
- China
- Prior art keywords
- display
- cathode
- display panel
- quantum dots
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
Abstract
The invention discloses a display panel suitable for an under-screen camera. The display panel comprises a driving back plate, an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode; the display panel is divided into a display area a and a display area b; the cathode of the display area a is a high-transmittance cathode, the luminescent layer is a quantum dot luminescent layer, and a lower screen camera is arranged below the display area a; the cathode of the display area b is a low-transmittance cathode, and the light-emitting layer is an OLED organic light-emitting layer. The invention provides a novel and suitable display device structure of a camera under a screen and a display panel design, which can simultaneously achieve the display performance of high color purity and the high permeability of a camera area and realize a 'true' full screen with excellent performance.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a display panel suitable for an off-screen camera.
Background
Because the spectrum of the intrinsic spectrum of the OLED is wide and the spectrum has a shoulder peak, the spectrum can not be narrowed, and the color purity is poor. Therefore, the AMOLED mobile phone and the wearing product both adopt a top emission AMOLED device structure, that is, light of the organic light emitting layer is emitted from the cathode side, the cathode has certain impermeability, so that an optical microcavity between the electrodes is formed, and the light is vibrated and coupled out of a narrowed spectrum in the microcavity, thereby meeting daily consumer product requirements of high color purity (fig. 1 and fig. 2).
Increasing the thickness of the cathode can result in a narrowed enhanced spectrum for specific design and production. Thus, the requirement for the cathode in actual production has a dilemma: if the cathode is too thin, the microcavity effect is too weak, the intrinsic relatively wide spectrum of the OLED is presented, and the spectrum has a shoulder peak, so that the spectrum cannot be narrowed, and the color purity is poor; if the cathode is too thick, the transmittance of the AMOLED screen is affected (FIG. 3). Therefore, the thickness and the process window of the cathode used in the prior art are very small, namely, the cathode is made into a semi-transparent nano-scale film, a certain transmittance is sacrificed, and a certain spectrum narrowing microcavity function is kept.
Under the circumstances, the screen occupation ratio of the smart phone screen is higher and higher, and how to make the camera screen down, thereby providing a higher screen occupation ratio, which becomes a technical difficulty of screen factories (fig. 4). Because different areas of the OLED display screen have different requirements on screen transmittance, the color purity caused by the thickness of the OLED cathode conflicts with the transmittance, the camera effect is poor, and a large amount of image processing and correction are needed (fig. 5).
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a novel and suitable display device structure of the camera under the screen and a display panel design, which simultaneously achieve the display performance of high color purity and the high permeability of the camera area and realize a 'true' full-face screen with excellent performance.
The technical scheme of the invention is specifically introduced as follows.
A display panel suitable for an under-screen camera comprises a driving backboard, an anode, a hole transport layer, a luminescent layer,
An electron transport layer and a cathode; the display panel is divided into a display area a and a display area b; the cathode of the display area a is a high-transmittance cathode, the luminescent layer is a quantum dot luminescent layer, and a lower screen camera is arranged below the display area a; the cathode of the display area b is a low-transmittance cathode, and the light-emitting layer is an OLED organic light-emitting layer.
In the invention, the cathodes of the display area a and the display area b are made of the same material, and the thickness of the cathode of the display area a is smaller than that of the cathode of the display area b
Cathode thickness in region b.
In the invention, the cathodes of the display area a and the display area b are made of different materials, and the transmissivity of the cathode material of the display area a
Greater than the transmittance of the cathode material in display b region.
In the invention, the transmittance of the high-transmittance cathode in the display area a is more than 70%, and the transmittance of the low-transmittance cathode in the display area b is between 35% and 55%.
In the invention, the diameter of the quantum dot light-emitting layer is between 2 and 20nm and is formed by IV, II-VI, IV-VI or III-V
Elemental composition; the quantum dots are selected from any one of silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots or perovskite quantum dots.
In the invention, the display area a and the display area b adopt the same driving backboard and anode, and the hole transport layer, the luminescent layer,
The electron transport layer and the cathode are separated, and the display panel with the same light color performance is matched by using the difference of the respective diode structures.
In the invention, the display area a and the display area b adopt the same driving back plate, an anode, a hole transport layer and an electron transport layer,
and the luminescent layer and the cathode are respectively separated, and the balance is compensated through the difference of driving signals of the display area a and the display area b, or the luminescent layer materials with similar photochromic performance are screened to match the display panel with the same photochromic performance.
In the present invention, one or two regions a are shown.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention can simultaneously achieve the display performance of high color purity and the high permeability of the camera area, meet the requirement of the camera on the high permeability of the display area and the requirement of the color purity of the whole display screen, and further realize a 'true' full-screen with excellent performance.
2. The present invention can be applied to different display fields by the deformation of the division shape, area, etc. of the display area a (high transmittance) and the display area b.
Drawings
FIG. 1 is a graph comparing the emission spectra of a conventional OLED structure with a microcavity OLED structure. The figure shows that: compared with the traditional OLED structure, the spectrum under the microcavity OLED structure is narrowed, and the color purity can be improved.
FIG. 2 is a detailed film stack diagram of a top-emitting microcavity OLED structure. The structure comprises a glass substrate, a driving tube unit, a reflecting electrode, a hole transport layer, a light-emitting layer, an electron transport layer, a semi-permeable cathode, a protective layer and a packaging glass layer from bottom to top in sequence.
FIG. 3 is a graph showing the dependence of the metal cathode transmittance on the metal cathode thickness. The figure shows that: the thicker the cathode film thickness, the greater the transmittance.
Fig. 4 is a trend graph of demand for a display screen in a smart phone market. The figure shows that the market has more and more requirements on the screen occupation ratio, a camera must be placed under the screen, and the trend is towards higher screen occupation ratio.
Fig. 5 is a diagram illustrating the technical characteristics of the under-screen technology of the camera to the cathode. It is illustrated that the cathode has a problem in that it is too thick or too thin, which is a current technical difficulty.
Fig. 6 is a solution explanatory diagram of the camera under-screen technology. The technical scheme of quantum dot light emission in the display area of the camera area under the screen is illustrated in the figure, and the solution can be obtained by matching OLED light emission technologies of other display areas.
Fig. 7 is a solution explanatory diagram of the camera under-screen technology. The technical scheme of quantum dot light emission in the display area of the under-screen camera area is illustrated in the figure, so that a thin cathode path of the area can be obtained, and high permeability of the area is realized.
Fig. 8 is an effect realization explanation of the display device adopting this solution. It is illustrated that this solution can achieve ultimately superior performance while taking into account various requirements considerations.
Fig. 9 is a specific structural diagram of embodiment 1 employing this solution. In the figure, only the anode E and the display driving back plate F in the display area a and the display area b are the same (the same process), and the hole transport layer, the light emitting layer, the electron transport layer and the cathode above the anode are respectively separated and are respectively matched with corresponding functional film layers according to the requirements of the same photochromic performance.
Fig. 10 is a specific structural view of embodiment 2 employing this solution. The electron transport layer B, the hole transport layer D, the anode E and the display driving back plate F in the display area a and the display area B are the same (the same process), the light emitting layer and the cathode are respectively separated, and because the quantum dot device in the area a and the OLED device in the area B have slight difference in voltage driving, the difference of driving signals in the area a and the area B is used for compensating balance.
Fig. 11 is a specific structural diagram of embodiment 3 employing this solution. The electron transport layer B, the hole transport layer D, the anode E and the display driving back plate F in the display area a and the display area B are the same (the same process), the light-emitting layer and the cathode are respectively separated, and because the quantum dot device in the area a and the OLED device in the area B have slightly different display to voltage driving, the light-emitting layer materials in the area a and the area B are used for preliminary experiment screening to obtain the mass-production light-emitting layer C1 and the OLED organic light-emitting layer C2 which have similar light and color properties.
Fig. 12 is another derivative structure, i.e., another embodiment, employing this solution. Such as the area deformation and the shape deformation of the areas a and b; or other structures are similar, but different structures are applied; or other application scenes or forms based on the mixed mode of the quantum dot light and the OLED organic layer light emitting.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the accompanying drawings and embodiments.
The OLED organic thin film and the quantum dot film layer can be constructed in the modes of vacuum evaporation, Ink jet printing, spin coating and the like, and the cathode adopts the process mode of vacuum evaporation.
It should be noted here that the cathodes in the region a and the region b are implemented by the respective processes to achieve different transmittances in the following ways:
1. the cathode of the area a is thinner, the cathode of the area b is thicker, and the cathodes are respectively evaporated by using respective shadow masks, but the materials are the same;
2. the cathode of the area a is high-transmittance, the cathode of the area b is not high-transmittance, evaporation is respectively carried out, materials are different, and optimization is carried out according to the dependence of transmittance;
3. and (3) evaporating a thin layer (the thickness of the area a) in the area a and the area b by using a shared shadow mask, and then evaporating only the area b in the area b by using a shadow mask only for the area b, which is equivalent to the secondary film formation of the area b.
The cathode of the present invention is a metal having a low work function, such as Mg, Ag, Al, or the above-mentioned multi-element composite metal.
The organic functional layer according to the present invention is a high-mobility organic small molecule (vapor deposition method) or a high-mobility polymer molecule (printing or spin coating method).
The luminescent layer related in the aspect, wherein the quantum dots have a diameter of 2-20nm, and are composed of IV, II-VI, IV-VI, or III-V elements, such as silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots, and the like; or perovskite quantum dots, etc.; the OLED organic light-emitting layer is made of various organic fluorescent and phosphorescent light-emitting materials.
The anode related in the invention is ITO with high work function or a metal/ITO composite mechanism, wherein the metal is Ag or Al.
Example 1
As shown in fig. 9, only the anode E and the display driving backplane F in the display area a and the display area b are the same (the same process), the hole transport layer, the light emitting layer, the electron transport layer, and the cathode above the anode are separated, and the corresponding functional film layers are respectively matched according to the requirements of the same photochromic performance, wherein the cathode a1 is an ultrathin structure (the transmittance is greater than 70%), and the cathode a2 is a semi-permeable structure (the transmittance is between 35% and 55%).
The scheme is characterized in that: the display back plate and the driving scheme of the area a and the area b are consistent with the tradition, and the display panel with the same light color performance is matched by utilizing the structural difference of respective diodes.
Example 2
As shown in fig. 10, the display a area is the same as the display B area electron transport layer B, the hole transport layer D, the anode E and the display driving backplane F (same process), the light emitting layer and the cathode are separated, since the quantum dot device in the a area and the OLED device in the B area display a slight difference to the voltage driving, the balance is compensated by the difference of the driving signals in the a area and the B area, the signals include power signals VDD and VEE, and also include data signals Vdata, etc.; the cathode A1 is an ultrathin structure (the transmittance is more than 70%), and the cathode A2 is a semi-permeable structure (the transmittance is between 35% and 55%).
The scheme is characterized in that: the power driving back plate, the anode and the functional film layer in the area a and the area b are the same, only the light emitting layer and the cathode are different, and the process is relatively simple; the driving scheme is used for carrying out signal compensation aiming at different areas, and the light color balancing effect is integrally realized.
Example 3
As shown in fig. 11, the electron transport layer B, the hole transport layer D, the anode E and the display driving backplane F in the display area a and the display area B are the same (same process), the light emitting layer and the cathode are respectively separated, and since the quantum dot device in the area a and the OLED device in the area B display slightly different voltage driving, the materials of the light emitting layer in the area a and the light emitting layer in the area B are used for preliminary experimental selection to obtain the materials of the quantum dot light emitting layer C1 and the OLED organic light emitting layer C2 with similar light color performance, and the organic functional layer B, D can also be selected through device preliminary experiments; the cathode A1 is an ultrathin structure (the transmittance is more than 70%), and the cathode A2 is a semi-permeable structure (the transmittance is between 35% and 55%).
The scheme is characterized in that: the power driving back plate, the anode and the functional film layer in the area a and the area b are the same, only the light emitting layer and the cathode are different, and the process is relatively simple; a large amount of device pre-experimental selection is required for the light-emitting layers C1 and C2, and a large amount of pre-work is required.
Derived structures based on the idea of the present invention, as shown in fig. 12, such as area deformation and shape deformation of regions a and b; or other structures are similar, but different structures are applied; or other application scenes or forms based on the mixed mode of the quantum dot light and the OLED organic layer light emitting.
Claims (8)
1. A display panel suitable for a camera under a screen is characterized in that the display panel comprises a driving back plate, an anode, a hole transport layer, a luminescent layer, an electron transport layer and a cathode; the display panel is divided into a display area a and a display area b; the cathode of the display area a is a high-transmittance cathode, the luminescent layer is a quantum dot luminescent layer, and a lower screen camera is arranged below the display area a; the cathode of the display area b is a low-transmittance cathode, and the light-emitting layer is an OLED organic light-emitting layer.
2. The display panel of claim 1, wherein the cathodes in display a and display b are made of the same material, and the thickness of the cathode in display a is smaller than that of the cathode in display b.
3. The display panel according to claim 1, wherein the cathodes in display a region and display b region are made of different materials, and the transmittance of the cathode material in display a region is greater than that of the cathode material in display b region.
4. The display panel of claim 1 wherein the high permeability cathode in display a has a permeability greater than 70% and the low permeability cathode in display b has a permeability between 35% and 55%.
5. The display panel of claim 1, wherein the quantum dot diameter of the quantum dot light emitting layer is 2-20nm
Consists of IV, II-VI, IV-VI or III-V elements; the quantum dots are selected from any one of silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots or perovskite quantum dots.
6. The display panel of claim 1, wherein the display a region and the display b region use the same driving back plate and anode, and the hole transport layer, the light emitting layer, the electron transport layer, and the cathode are separated from each other, and the display panel with the same light color performance is obtained by using the difference of the respective diode structures.
7. The display panel of claim 1, wherein the display a region and the display b region use the same driving back plate, anode, hole transport layer and electron transport layer, and the luminescent layer and cathode are separated from each other, and the display panel with the same light color performance is matched by compensating the balance of the difference of the driving signals of the display a region and the display b region or by screening luminescent layer materials with similar light color performance.
8. The display panel according to claim 1, wherein the display a region is one or two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910959029.5A CN110783486A (en) | 2019-10-10 | 2019-10-10 | Display panel suitable for camera under screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910959029.5A CN110783486A (en) | 2019-10-10 | 2019-10-10 | Display panel suitable for camera under screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110783486A true CN110783486A (en) | 2020-02-11 |
Family
ID=69384965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910959029.5A Pending CN110783486A (en) | 2019-10-10 | 2019-10-10 | Display panel suitable for camera under screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110783486A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969017A (en) * | 2020-08-21 | 2020-11-20 | 合肥维信诺科技有限公司 | Display panel and preparation method thereof |
| US11043636B2 (en) | 2017-05-17 | 2021-06-22 | Oti Lumionics Inc. | Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating |
| US11088327B2 (en) | 2015-10-26 | 2021-08-10 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| WO2021227197A1 (en) * | 2020-05-13 | 2021-11-18 | 武汉华星光电半导体显示技术有限公司 | Under-screen camera display panel and manufacturing method therefor |
| WO2021227205A1 (en) * | 2020-05-15 | 2021-11-18 | 武汉华星光电半导体显示技术有限公司 | Oled panel and manufacturing method therefor |
| US11581487B2 (en) | 2017-04-26 | 2023-02-14 | Oti Lumionics Inc. | Patterned conductive coating for surface of an opto-electronic device |
| US11700747B2 (en) | 2019-06-26 | 2023-07-11 | Oti Lumionics Inc. | Optoelectronic device including light transmissive regions, with light diffraction characteristics |
| US11730012B2 (en) | 2019-03-07 | 2023-08-15 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| US11744101B2 (en) | 2019-08-09 | 2023-08-29 | Oti Lumionics Inc. | Opto-electronic device including an auxiliary electrode and a partition |
| US11751415B2 (en) | 2018-02-02 | 2023-09-05 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| US11832473B2 (en) | 2019-06-26 | 2023-11-28 | Oti Lumionics Inc. | Optoelectronic device including light transmissive regions, with light diffraction characteristics |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013057873A1 (en) * | 2011-10-18 | 2013-04-25 | 凸版印刷株式会社 | Organic electroluminescent display panel and method for manufacturing same |
| CN109786582A (en) * | 2019-03-08 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of mask plate, display backboard, display panel and display device |
| CN110060578A (en) * | 2018-01-19 | 2019-07-26 | 华为技术有限公司 | Terminal device and display methods |
| CN110187742A (en) * | 2019-05-13 | 2019-08-30 | 昆山国显光电有限公司 | Display module and display terminal |
-
2019
- 2019-10-10 CN CN201910959029.5A patent/CN110783486A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013057873A1 (en) * | 2011-10-18 | 2013-04-25 | 凸版印刷株式会社 | Organic electroluminescent display panel and method for manufacturing same |
| CN110060578A (en) * | 2018-01-19 | 2019-07-26 | 华为技术有限公司 | Terminal device and display methods |
| CN109786582A (en) * | 2019-03-08 | 2019-05-21 | 京东方科技集团股份有限公司 | A kind of mask plate, display backboard, display panel and display device |
| CN110187742A (en) * | 2019-05-13 | 2019-08-30 | 昆山国显光电有限公司 | Display module and display terminal |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11335855B2 (en) | 2015-10-26 | 2022-05-17 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US11785831B2 (en) | 2015-10-26 | 2023-10-10 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US11088327B2 (en) | 2015-10-26 | 2021-08-10 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US11158803B2 (en) | 2015-10-26 | 2021-10-26 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US11158802B2 (en) | 2015-10-26 | 2021-10-26 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US11706969B2 (en) | 2015-10-26 | 2023-07-18 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US11581487B2 (en) | 2017-04-26 | 2023-02-14 | Oti Lumionics Inc. | Patterned conductive coating for surface of an opto-electronic device |
| US11730048B2 (en) | 2017-05-17 | 2023-08-15 | OTI Lumionic Inc. | Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating |
| US11043636B2 (en) | 2017-05-17 | 2021-06-22 | Oti Lumionics Inc. | Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating |
| US11751415B2 (en) | 2018-02-02 | 2023-09-05 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| US11730012B2 (en) | 2019-03-07 | 2023-08-15 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| US11700747B2 (en) | 2019-06-26 | 2023-07-11 | Oti Lumionics Inc. | Optoelectronic device including light transmissive regions, with light diffraction characteristics |
| US11832473B2 (en) | 2019-06-26 | 2023-11-28 | Oti Lumionics Inc. | Optoelectronic device including light transmissive regions, with light diffraction characteristics |
| US11744101B2 (en) | 2019-08-09 | 2023-08-29 | Oti Lumionics Inc. | Opto-electronic device including an auxiliary electrode and a partition |
| WO2021227197A1 (en) * | 2020-05-13 | 2021-11-18 | 武汉华星光电半导体显示技术有限公司 | Under-screen camera display panel and manufacturing method therefor |
| US11874999B2 (en) | 2020-05-13 | 2024-01-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel with under-screen camera and manufacturing method thereof |
| WO2021227205A1 (en) * | 2020-05-15 | 2021-11-18 | 武汉华星光电半导体显示技术有限公司 | Oled panel and manufacturing method therefor |
| US11751428B2 (en) | 2020-05-15 | 2023-09-05 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED panel and method of manufacturing the same |
| CN111969017A (en) * | 2020-08-21 | 2020-11-20 | 合肥维信诺科技有限公司 | Display panel and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110783486A (en) | Display panel suitable for camera under screen | |
| US8575603B2 (en) | Pixel structure of an electroluminescent display panel | |
| US9065079B2 (en) | Fabrication method of a pixel structure of an electroluminescent display panel | |
| US9166204B2 (en) | Organic light-emitting diode and method of fabricating the same | |
| CN107275503B (en) | OLED device and preparation method thereof | |
| US9312309B2 (en) | Organic light emitting diode display and method for manufacturing the same | |
| US20190296264A1 (en) | Quantum dot based pixel assembly | |
| US10529957B2 (en) | Organic light emitting diode display and manufacturing method thereof | |
| US8253324B2 (en) | Display apparatus | |
| US20190103588A1 (en) | Oled, method for manufacturing the same, display substrate and display device | |
| CN102110783A (en) | Low-voltage-driven hole injection layer serving as OLED device of luminescence adjustment layer | |
| US20060220008A1 (en) | Method of fabricating electroluminescent display | |
| CN110867524B (en) | Display panel, manufacturing method thereof and display device | |
| CN110335953A (en) | A kind of organic electroluminescence device and display panel | |
| US7545096B2 (en) | Trans-reflective organic electroluminescent panel and method of fabricating the same | |
| CN110048024B (en) | Display substrate, manufacturing method thereof and display device | |
| US11223031B2 (en) | Full color display module and manufacturing method of same | |
| US11404504B2 (en) | Display panel and method of manufacturing the same | |
| CN110797470A (en) | Display device, display panel, light emitting device and method of manufacturing the same | |
| CN100525567C (en) | Organic EL panel and method of forming the same | |
| WO2020041993A1 (en) | Display screen using hybrid light-emitting diode and manufacturing method therefor | |
| KR101786880B1 (en) | White organic light emitting device | |
| US20230157043A1 (en) | Display panel and manufacturing method of display panel | |
| US11889739B2 (en) | OLED with electron transport layer within insulating layer | |
| US10923673B2 (en) | Organic light emitting panel, manufacturing method thereof, and organic light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200211 |
|
| RJ01 | Rejection of invention patent application after publication |