CN110783424A - 一种提升局部背电场(lbsf)工艺稳定性的方法 - Google Patents

一种提升局部背电场(lbsf)工艺稳定性的方法 Download PDF

Info

Publication number
CN110783424A
CN110783424A CN201910923602.7A CN201910923602A CN110783424A CN 110783424 A CN110783424 A CN 110783424A CN 201910923602 A CN201910923602 A CN 201910923602A CN 110783424 A CN110783424 A CN 110783424A
Authority
CN
China
Prior art keywords
laser
finished product
semi
perc
adopting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910923602.7A
Other languages
English (en)
Inventor
吴俊旻
张鹏
王岚
尹丙伟
杨蕾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongwei Solar Chengdu Co Ltd
Original Assignee
Tongwei Solar Chengdu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongwei Solar Chengdu Co Ltd filed Critical Tongwei Solar Chengdu Co Ltd
Priority to CN201910923602.7A priority Critical patent/CN110783424A/zh
Publication of CN110783424A publication Critical patent/CN110783424A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868Passivation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种提升局部背电场(LBSF)工艺稳定性的方法,属于晶硅太阳能电池生产制造技术领域中的一种电池制造工艺,其目的在于提供一种提升局部背电场(LBSF)工艺,其技术方案为(1)PERC电池的半成品加工;(2)采用激光在步骤(1)中PERC电池的半成品的背面氧化铝及氮化硅膜进行激光开槽;(3)使用丝网印刷将硼源印刷至激光开槽区域;(4)采用激光在步骤(3)将硼源上的硼原子掺杂至PERC电池半成品中部的P型硅中;(5)采用HF溶液对磷源进行清洗;(6)采用丝网印刷形成PERC电池成品;本发明提供一种提升局部背电场(LBSF)工艺稳定性的方法,在局部背电场的工艺中额外添加一道激光工艺,就能有效提升效率以及产品的良率,进而提升产品的加工效率和质量。

Description

一种提升局部背电场(LBSF)工艺稳定性的方法
技术领域
本发明属于晶硅太阳能电池生产制造技术领域,具体涉及一种提升局部背电场(LBSF)工艺稳定性的方法。
背景技术
局部背电场技术(LBSF)是在PERC电池技术的基础上有效提升效率的一种方法,现有的主流技术是在背面钝化层(包含氧化铝及氮化硅膜)后进行硼源的印刷,之后将硼源干燥后进行激光掺杂工艺,在现有的技术上激光同时进行钝化层开槽以及掺杂硼源的工作现有的局部背电场技术(LBSF)技术中,主流的方式是采用一次激光,在背面钝化层后进行硼源的印刷,之后将硼源干燥后进行激光掺杂工艺,在现有的技术上激光同时进行钝化层开槽以及掺杂硼源的工作,此种方式会造成掺杂稳定性差进而影响效率以及良率,对于电池产品的可靠度亦会影响。本专利设计的方法只需在局部背电场的工艺中额外添加一道激光工艺,就能有效提升效率以及产品的良率,进而提升企业获利。同时本专利设计的方法实现途径简单、快捷、有效。对实际生产有很大益处。还有通过本专利提供的方案,可以减少不良产品的产生,提升太阳能电池生产效率,还可以有效提升产品良率。
发明内容
本发明的目的在于:为解决现有技术中,局部背电场技术(LBSF)的稳定性,提供一种提升局部背电场(LBSF)工艺稳定性的方法,在局部背电场的工艺中额外添加一道激光工艺,就能有效提升效率以及产品的良率,进而提升产品的加工效率和质量。
本发明采用的技术方案如下:
一种提升局部背电场(LBSF)工艺稳定性的方法,包括如下步骤:
(1)对PERC电池进行背面氧化铝膜及正面氮化硅膜加工,形成PERC电池的半成品;
(2)采用激光在步骤(1)中PERC电池的半成品的背面氧化铝膜进行激光开槽,所述激光开槽的具体位置为背面氧化铝膜中的AI2O3钝化层和SiNx减反射层中沿对称轴的两侧位置;
(3)使用丝网印刷的方式将硼源印刷至激光开槽区域,所述硼源以胶料的形式印刷至激光开槽区域;
(4)采用激光在步骤(3)硼源上的硼原子掺杂至PERC电池半成品中部的P型硅中,掺杂后的P型硅形成P型硅掺杂区,所述P型硅掺杂区的方块电阻为10~50ohm/sq;
(5)采用HF溶液,对步骤(4)中多余的磷源进行清洗,所述HF溶液的浓度为:5%~15%;
(6)采用丝网印刷将步骤(5)中的PERC电池的半成品进行印刷加工,形成PERC电池成品。
进一步的,所述激光为纳秒激光或皮秒激光,纳秒激光或皮秒激光的波长为532nm。
进一步的,所述步骤(6)形成的PERC电池成品中的背面电极为铝电极,所述铝电极的一端置于激光开槽中。
进一步的,适用于对电池的单面或双面进行加工。
综上所述,由于采用了上述技术方案,本发明的有益效果是:
本发明中,本专利设计的方法在局部背电场的工艺中额外添加一道激光工艺,就能有效提升效率以及产品的良率,进而提升企业的生产效率和质量。同时本专利设计的方法实现途径简单、快捷、有效。对实际生产有很大益处。还有通过本专利提供的方案,可以减少不良产品的产生,提升太阳能电池生产效率,还可以有效提升产品良率。
附图说明
图1为本发明形成P型掺杂区示意图。
图2为本发明双面成品电池示意图。
图3为本发明单面成品电池示意图。
图中标记:1-P型硅层、2-N型掺杂区、3-正面SiNx减反射层、4-N型重掺杂区、5-正面银电极、6-AI2O3钝化层、7-SiNx减反射层、8-P型掺杂区、9-激光开槽、10-背面铝电极。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。
一种PERC电池成品,包括设置在中部的P型硅层1、从下到上依次设置在P型硅层1上侧的N型掺杂区2、正面SiNx减反射层3,所述N型掺杂区2中设置有N型重掺杂区4,所述正面SiNx减反射层3中设置有正面银电极5;所述P型硅层1下侧面依次设置有AI2O3钝化层6、SiNx减反射层7,所述P型硅层1靠近AI2O3钝化层6的位置设置有P型掺杂区8,所述AI2O3钝化层6和SiNx减反射层7设置有激光开槽9,所述激光开槽9的一端靠近P型掺杂区8,所述激光开槽内部设置有背面铝电极10。
一种提升局部背电场(LBSF)工艺稳定性的方法,包括如下步骤:
(1)对PERC电池进行背面氧化铝膜及正面氮化硅膜加工,形成PERC电池的半成品;
(2)采用激光在步骤(1)中PERC电池的半成品的背面氧化铝膜进行激光开槽,所述激光开槽的具体位置为背面氧化铝膜中的AI2O3钝化层和SiNx减反射层中沿对称轴的两侧位置;
(3)使用丝网印刷的方式将硼源印刷至激光开槽区域,所述硼源以胶料的形式印刷至激光开槽区域;
(4)采用激光在步骤(3)硼源上的硼原子掺杂至PERC电池半成品中部的P型硅中,掺杂后的P型硅形成P型硅掺杂区,所述P型硅掺杂区的方块电阻为10~50ohm/sq;
(5)采用HF溶液,对步骤(4)中多余的磷源进行清洗,所述HF溶液的浓度为:5%~15%;
(6)采用丝网印刷将步骤(5)中的PERC电池的半成品进行印刷加工,形成PERC电池成品。
作为优选,所述激光为纳秒激光或皮秒激光,纳秒激光或皮秒激光的波长为532nm。
作为优选,所述步骤(6)形成的PERC电池成品中的背面电极为铝电极,所述铝电极的一端置于激光开槽中。
作为优选,适用于对电池的单面或双面进行加工;SiNx减反射层的下方设置有铝背场层,所述铝背场层采用铝材料并覆盖在SiNx减反射层的下方。
实施例1
一种PERC电池成品,包括设置在中部的P型硅层1、从下到上依次设置在P型硅层1上侧的N型掺杂区2、正面SiNx减反射层3,所述N型掺杂区2中设置有N型重掺杂区4,所述正面SiNx减反射层3中设置有正面银电极5;所述P型硅层1下侧面依次设置有AI2O3钝化层6、SiNx减反射层7,所述P型硅层1靠近AI2O3钝化层6的位置设置有P型掺杂区8,所述AI2O3钝化层6和SiNx减反射层7设置有激光开槽9,所述激光开槽9的一端靠近P型掺杂区8,所述激光开槽内部设置有背面铝电极10。
实施例2
在实施例1的基础上,一种提升局部背电场(LBSF)工艺稳定性的方法,其特征在于,包括如下步骤:
(1)对PERC电池进行背面氧化铝膜及正面氮化硅膜加工,形成PERC电池的半成品;
(2)采用激光在步骤(1)中PERC电池的半成品的背面氧化铝膜进行激光开槽,所述激光开槽的具体位置为背面氧化铝膜中的AI2O3钝化层和SiNx减反射层中沿对称轴的两侧位置;
(3)使用丝网印刷的方式将硼源印刷至激光开槽区域,所述硼源以胶料的形式印刷至激光开槽区域;
(4)采用激光在步骤(3)硼源上的硼原子掺杂至PERC电池半成品中部的P型硅中,掺杂后的P型硅形成P型硅掺杂区,所述P型硅掺杂区的方块电阻为30ohm/sq。
(5)采用HF溶液,对步骤(4)中多余的磷源进行清洗,所述HF溶液的浓度为8%。
(6)采用丝网印刷将步骤(5)中的PERC电池的半成品进行印刷加工,形成PERC电池成品。
实施例3
在实施例2的基础上,所述激光为纳秒激光或皮秒激光,纳秒激光或皮秒激光的波长为532nm。
实施例4
在实施例3的基础上,所述步骤(6)形成的PERC电池成品中的背面电极为铝电极,所述铝电极的一端置于激光开槽中。
实施例5
在上述实施例的基础上,适用于对电池的单面或双面进行加工;SiNx减反射层的下方设置有铝背场层,所述铝背场层采用铝材料并覆盖在SiNx减反射层的下方。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。

Claims (4)

1.一种提升局部背电场(LBSF)工艺稳定性的方法,其特征在于,包括如下步骤:
(1)对PERC电池进行背面氧化铝膜及正背面氮化硅膜进行镀膜加工,形成PERC电池的半成品;
(2)采用激光在步骤(1)中PERC电池的半成品的背面氧化铝及氮化硅膜膜进行激光开槽,所述激光开槽的具体位置为背面氧化铝膜中的AI2O3钝化层和SiNx减反射层中沿对称轴的两侧位置;
(3)使用丝网印刷的方式将硼源印刷至激光开槽区域,所述硼源以胶料的形式印刷至激光开槽区域;
(4)采用激光在步骤(3)硼源上的硼原子掺杂至PERC电池半成品中部的P型硅中,掺杂后的P型硅形成P型硅掺杂区,所述P型硅掺杂区的方块电阻为10~50ohm/sq;
(5)采用HF溶液,对步骤(4)中多余的磷源进行清洗,所述HF溶液的浓度为:5%~15%;
(6)采用丝网印刷将步骤(5)中的PERC电池的半成品进行印刷加工,形成PERC电池成品。
2.如权利要求1所述的一种提升局部背电场(LBSF)工艺稳定性的方法,其特征在于:所述激光为纳秒激光或皮秒激光,纳秒激光或皮秒激光的波长为532nm。
3.如权利要求1所述的一种提升局部背电场(LBSF)工艺稳定性的方法,其特征在于:所述步骤(6)形成的PERC电池成品中的背面电极为铝电极,所述铝电极的一端置于激光开槽中。
4.如权利要求1所述的一种提升局部背电场(LBSF)工艺稳定性的方法,其特征在于:适用于对电池的单面或双面进行加工。
CN201910923602.7A 2019-09-24 2019-09-24 一种提升局部背电场(lbsf)工艺稳定性的方法 Pending CN110783424A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910923602.7A CN110783424A (zh) 2019-09-24 2019-09-24 一种提升局部背电场(lbsf)工艺稳定性的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910923602.7A CN110783424A (zh) 2019-09-24 2019-09-24 一种提升局部背电场(lbsf)工艺稳定性的方法

Publications (1)

Publication Number Publication Date
CN110783424A true CN110783424A (zh) 2020-02-11

Family

ID=69384584

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910923602.7A Pending CN110783424A (zh) 2019-09-24 2019-09-24 一种提升局部背电场(lbsf)工艺稳定性的方法

Country Status (1)

Country Link
CN (1) CN110783424A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739985A (zh) * 2020-08-21 2020-10-02 浙江晶科能源有限公司 太阳能电池及其选择性发射极的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009107955A2 (en) * 2008-02-25 2009-09-03 Lg Electronics Inc. Solar cell and method for manufacturing the same
CN103367545A (zh) * 2013-07-08 2013-10-23 浙江晶科能源有限公司 一种在太阳电池背面利用激光同步实现局域接触和局域掺杂的方法
CN105225933A (zh) * 2014-05-28 2016-01-06 上海凯世通半导体有限公司 掺杂方法
CN106653895A (zh) * 2016-12-30 2017-05-10 苏州阿特斯阳光电力科技有限公司 一种局部掺杂晶体硅太阳能电池及其制备方法
CN107863419A (zh) * 2017-11-02 2018-03-30 国家电投集团西安太阳能电力有限公司 一种双面perc晶体硅太阳能电池的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009107955A2 (en) * 2008-02-25 2009-09-03 Lg Electronics Inc. Solar cell and method for manufacturing the same
CN103367545A (zh) * 2013-07-08 2013-10-23 浙江晶科能源有限公司 一种在太阳电池背面利用激光同步实现局域接触和局域掺杂的方法
CN105225933A (zh) * 2014-05-28 2016-01-06 上海凯世通半导体有限公司 掺杂方法
CN106653895A (zh) * 2016-12-30 2017-05-10 苏州阿特斯阳光电力科技有限公司 一种局部掺杂晶体硅太阳能电池及其制备方法
CN107863419A (zh) * 2017-11-02 2018-03-30 国家电投集团西安太阳能电力有限公司 一种双面perc晶体硅太阳能电池的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739985A (zh) * 2020-08-21 2020-10-02 浙江晶科能源有限公司 太阳能电池及其选择性发射极的制备方法
CN111739985B (zh) * 2020-08-21 2021-01-12 浙江晶科能源有限公司 太阳能电池及其选择性发射极的制备方法

Similar Documents

Publication Publication Date Title
US8426724B2 (en) Interdigitated back contact silicon solar cells with separating grooves
CN110707159A (zh) 一种正背面全面积接触钝化的p型晶硅太阳电池及其制备方法
CN102593248B (zh) 一种基于等离子刻蚀技术的背面接触晶体硅太阳电池的制备方法
WO2023093604A1 (zh) 太阳能电池以及太阳能电池的制备方法
CN115498057B (zh) 联合钝化背接触太阳能电池及其基于激光扩散的制备方法
CN102637767B (zh) 太阳能电池的制作方法以及太阳能电池
WO2019007188A1 (zh) 双面polo电池及其制备方法
CN102623517A (zh) 一种背接触型晶体硅太阳能电池及其制作方法
CN110610998A (zh) 一种正面局域钝化接触的晶硅太阳电池及其制备方法
CN102254963A (zh) 一种石墨烯/硅柱阵列肖特基结光伏电池及其制造方法
CN206148449U (zh) 一种适合薄片化的n型pert双面电池结构
CN103346205A (zh) 一种交叉垂直发射极结构晶体硅太阳能电池的制备方法
WO2023077772A1 (zh) 太阳能电池及其制备方法
EP3916813A1 (en) Double-sided power generation solar cell and fabricating method therefor
CN109638101A (zh) 双层非晶硅掺杂层太阳电池的发射极结构及其制备方法
CN103066135B (zh) 一种前电极主栅线与硅衬底隔离的选择性发射极太阳电池及其制备方法
CN110571299B (zh) 一种自对准式埋栅钝化接触晶硅太阳电池及其制备方法
CN101969082B (zh) 一种两次丝网印刷与刻槽结合的太阳能电池制造工艺
CN102487103B (zh) 太阳能电池及其制备方法
CN105702757B (zh) 一种晶体硅太阳能电池透明导电组合体及其制备方法
CN110783424A (zh) 一种提升局部背电场(lbsf)工艺稳定性的方法
CN103022174B (zh) 一种基于n型硅片的金属贯穿式背发射极晶硅太阳电池及其制备方法
CN107731940B (zh) 一种perc多晶硅太阳能电池及其制备方法
CN106653923B (zh) 一种适合薄片化的n型pert双面电池结构及其制备方法
CN105529380A (zh) 一种背面抛光的单晶硅太阳能电池片制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20200211