CN110767780A - Ultraviolet light emitting diode module and manufacturing method of light guide element - Google Patents

Ultraviolet light emitting diode module and manufacturing method of light guide element Download PDF

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Publication number
CN110767780A
CN110767780A CN201810838380.4A CN201810838380A CN110767780A CN 110767780 A CN110767780 A CN 110767780A CN 201810838380 A CN201810838380 A CN 201810838380A CN 110767780 A CN110767780 A CN 110767780A
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CN
China
Prior art keywords
light guide
guide element
face
light
section
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Pending
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CN201810838380.4A
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Chinese (zh)
Inventor
张延瑜
李瑞评
郭哲伟
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CRYSTALWISE Tech Inc
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CRYSTALWISE Tech Inc
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Priority to CN201810838380.4A priority Critical patent/CN110767780A/en
Publication of CN110767780A publication Critical patent/CN110767780A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

An ultraviolet light-emitting diode module comprises an ultraviolet light-emitting diode chip and a light guide element, wherein the light guide element is conical and is provided with a first end face and a second end face which are parallel, the area of the first end face is smaller than that of the second end face, and the first end face is connected with a light-emitting face. The manufacturing method of the light guide element comprises the following steps: selecting a region on the first surface of a substrate, removing material around the region until the region penetrates through the substrate, forming a rough device blank on the substrate in the region, and annealing the rough device blank to form the light guide device. Therefore, the LED lamp has good light-emitting gain, simple structure and easy manufacturing method.

Description

Ultraviolet light emitting diode module and manufacturing method of light guide element
Technical Field
The present invention relates to ultraviolet light emitting diodes; in particular, to an ultraviolet light emitting diode module having a light guide element and a method for manufacturing the light guide element.
Background
The ultraviolet light emitting diode can be applied to the fields of medical treatment, biomedical cosmetology, sterilization, biological identification and the like, and has the advantage of small size compared with the traditional ultraviolet light lamp tube. Please refer to fig. 1, which shows a conventional uv led module 1, which includes a uv led 10 and a quartz or resin lens 12, wherein the uv led 10 is a surface light source and has a light emitting surface 102, and the quartz or resin lens 12 is connected to the light emitting surface 102. The curvature change of the quartz or resin lens 12 reduces the incident angle of the ultraviolet light emitted by the ultraviolet light emitting diode 10 to the air interface so as to reduce the interface reflection amount, thereby achieving the light-emitting gain effect.
The quartz or resin lens 12 has the effect of light gain, but has the problem of poor heat conduction or material aging, for example, the use of sapphire material can reduce the problem of poor heat conduction and material aging. However, the size of the sapphire lens 12 is small (about 2-5 mm in diameter), the outer surface 122 is a curved surface, and the hardness of sapphire is high, so the process of forming the sapphire lens 12 from a sapphire substrate is difficult, the yield cannot be increased, and the process cost is high. The sapphire lens 12 can reduce the problem of poor heat conduction or material aging of the material, but the manufacturing cost of the uv led module 1 cannot be reduced.
Disclosure of Invention
In view of the above, the present invention provides an ultraviolet light emitting diode module and a method for manufacturing a light guide element, which have good light extraction gain and effectively reduce the manufacturing cost.
In order to achieve the above object, the present invention provides an ultraviolet light emitting diode module, which includes an ultraviolet light emitting diode chip and a light guide element, wherein the ultraviolet light emitting diode chip has a light emitting surface for emitting ultraviolet light; the light guide element is conical and is provided with a first end face and a second end face which are parallel, and a side face is connected between the first end face and the second end face; the first end face is connected with the light emitting face.
The invention provides a manufacturing method of a light guide element, which comprises the following steps: providing a substrate, wherein the substrate can be penetrated by ultraviolet light and is provided with a first surface and a second surface which are opposite; selecting a region on the first surface of the substrate, and removing the material around the region to remove the substrate part around the region until penetrating through the first surface and the second surface, forming a conical element rough blank on the substrate part in the region, wherein the element rough blank has a first end surface, a second end surface and a side surface, and the side surface is connected between the first end surface and the second end surface; annealing the element rough blank at 1650-2000 ℃ for more than 2 hours; after the annealing operation, the element rough blank forms the light guide element.
The invention has the advantages that the light of the ultraviolet light-emitting diode can be effectively transmitted in a centralized way through the light guide element, and the light guide element has good light-emitting gain.
Drawings
Fig. 1 is a schematic diagram of a conventional led-uv module.
Fig. 2 is a schematic view of an ultraviolet light emitting diode module according to a first preferred embodiment of the invention.
Fig. 3 is a perspective view of the light guide element of the above preferred embodiment.
Fig. 4 is a graph showing the relationship between the height of the light guide element and the light extraction gain.
Fig. 5 is a graph comparing the light extraction gain of light guide elements with different half-cone angles with a conventional sapphire lens.
FIG. 6 is a flow chart of a method for manufacturing the light guide element according to the above preferred embodiment.
FIG. 7 is a schematic view illustrating a laser beam being used to remove material from a substrate layer by layer.
FIG. 8 is a schematic view illustrating a first layer of material removal from a substrate with a laser beam using a plurality of streets.
FIG. 9 is a microscopic partial enlargement of the side of the green body of the preferred embodiment component prior to annealing.
FIG. 10 is a microscopic partial magnified view of the side of the rough blank of the preferred embodiment element after annealing.
Fig. 11 is a partially enlarged view of fig. 9.
Fig. 12 is a schematic view of a method for manufacturing a light guide element according to a second preferred embodiment of the present invention, which discloses a machining tool for removing material from a substrate.
Fig. 13 is a schematic view of the method for manufacturing the light guide element according to the preferred embodiment, and shows that the processing tool penetrates through the substrate.
Fig. 14 is a perspective view of a light guide element according to a third preferred embodiment of the present invention.
Fig. 15 is a perspective view of a light guide element according to a fourth preferred embodiment of the present invention.
Fig. 16 is a perspective view of a light guide element according to a fifth preferred embodiment of the present invention.
Fig. 17 is a schematic view of the light guide element of the above preferred embodiment.
Fig. 18 is a schematic view of a light guide element according to a sixth preferred embodiment of the present invention.
Fig. 19 is a schematic view of a light guide element according to a seventh preferred embodiment of the present invention.
[ notation ] to show
[ conventional ]
1 ultraviolet light-emitting diode module
10 ultraviolet light emitting diode
102 light-emitting surface
12 sapphire lens
122 outside surface
[ invention ]
2 ultraviolet light-emitting diode module
20 ultraviolet light emitting diode chip
202 light emitting surface
22 light guide element
222 first end surface 224 second end surface 226 side surface
24 base plate
242 first side 244 second side 24a layer
24b cutting path
26 element blank
30 machining tool
302 space 32 first side of substrate 322
324 second side 34 element blank
36 light guide element
38 light guide element
40 light guide element
402a first section 402a first end 404 second section
404a second end face
42 light guide element
422 first section 422a first end face 424 second section
424a second end face
44 light guide element
442 first end face 444 and second end face 446
Region A
Height H
L laser beam
α, α 1, α 2 half cone angle
Detailed Description
In order to more clearly illustrate the present invention, preferred embodiments are described in detail below with reference to the accompanying drawings. Referring to fig. 2 and fig. 3, an ultraviolet light emitting diode module 2 according to a first preferred embodiment of the present invention includes an ultraviolet light emitting diode chip 20 and a light guide element 22, wherein:
the led chip 20 is a surface light source, and has a light emitting surface 202, where the light emitting surface 202 emits ultraviolet light, which is in the present embodiment, ultraviolet light in the UV-C band. The led chip 20 is rectangular and has a maximum length (i.e. length of diagonal line of rectangle), in this embodiment, the maximum length is 1.4mm as an example.
The light guide element 22 is in a truncated cone shape and has a first end face 222, a second end face 224 and a side face 226, which are parallel to each other, and the side face 226 is connected between the first end face 222 and the second end face 224. The area of the first end surface 222 is smaller than that of the second end surface 224, and the cross-sectional area of the light guide element 22 is gradually enlarged from the first end surface 222 to the second end surface 224 to form a taper shape. The first end face 222 is connected to the light emitting surface 202 of the led chip 20, and the first end face 222 and the light emitting surface 202 can be connected by gluing or directly bonded by plasma activation. The distance between the first end surface 222 and the second end surface 224 of the light guide element 22 is the height H of the light guide element 22, and the height H of the light guide element 22 is at least twice, preferably more than twice, the maximum length of the uv led chip 20. The centerline average roughness (Ra., arithmetric mean) of the side 226 is not more than 0.1 μm.
In the present embodiment, the light guide element 22 is made of sapphire, but not limited thereto, single crystal aluminum nitride, quartz or calcium fluoride (CaF) may be used2) The light guide element 22 is a flat-top cone with a half cone angle α, the half cone angle α is less than 45 degrees, preferably 5-35 degrees, the light guide element 22 is made of sapphire, the refractive index of sapphire in the UV-C band is about 1.82, and the total reflection angle is 33.3 degrees, so that the half cone angle α is less than 33.3 degrees, and therefore, the light collecting effect and the light extraction gain are better.
Fig. 4 is a graph showing the relationship between the height H of the light guide element 22 and the light extraction gain when the half cone angle is α 30 degrees, as is apparent from fig. 4, when the height H of the light guide element 22 is twice the maximum length of the uv led chip 20, the light extraction gain exceeds 150%, and when the height H is more than twice the maximum length, the light extraction gain reaches more than 200%.
Fig. 5 shows a comparison of the light-emitting gains of the light guide element 22 with different half cone angles α and the conventional sapphire lens (curvature 1.5mm) when the height H is 6mm, and it can be seen from fig. 5 that the light guide element 22 of the present invention can increase the light-emitting gain at the half cone angles 3-45 degrees, the light-emitting gain at the half cone angles 5-35 degrees has reached a level equivalent to that of the conventional sapphire lens, and the light-emitting gain at the half cone angles 10-25 degrees is even better than that of the conventional sapphire lens.
Referring to fig. 6 to 8, a method for manufacturing the light guide element 22 of the present embodiment is described, which includes the following steps shown in fig. 6:
a substrate 24 capable of transmitting ultraviolet light is provided, the substrate 24 has a first surface 242 and a second surface 244 opposite to each other, the substrate is a sapphire substrate in this embodiment, the first surface 242 and the second surface 244 are polished surfaces, in practice, at least the first surface 242 needs to be polished to form the flat first end surface 222 of the light guide element 22, which is favorable for ultraviolet light incidence.
A region a is selected on the first side 242 of the substrate 24 and a material removal process is performed around the region a to remove a portion of the substrate 24 around the region a. In this embodiment, the material removing process includes dividing the periphery of the region a into a plurality of layers 24a in a direction from the first surface 242 to the second surface 244 by the laser beam L of the picosecond laser, and removing the portion of the substrate 24 around the region a layer by layer (see fig. 7). When removing the substrate 24 portion of each layer 24a, a plurality of cuts 24b are formed by the laser beam L to remove the substrate 24 portion around the area a, and fig. 8 is a schematic diagram of the first layer material removal.
After removing to the lowest layer and penetrating through the first surface 242 and the second surface 244 of the substrate 24, a tapered rough device 26 is formed in the portion of the substrate 24 in the region a, where the rough device 26 has a first end surface 222, a second end surface 224, and a side surface 226.
Then, annealing operation is performed on the element rough blank 26, wherein the annealing temperature is 1650-2000 ℃, the annealing time is more than 2 hours, and the annealing temperature is 1750 ℃ in the embodiment.
After the annealing operation, the light guide element 22 is formed from the element blank 26.
FIG. 9 is a microscopic partial enlarged view of the side surface 226 of the device blank 26 before annealing, wherein the side surface has a centerline roughness average of 0.2-0.4 μm. Fig. 10 and 11 are partial enlarged views of the side surface 226 of the rough device blank 26 under a microscope after annealing, in which the average roughness of the center line of the side surface 226 is reduced to less than 0.1 μm, thereby increasing the light-extraction gain of the light guide device 22.
Fig. 12 and 13 show a method for manufacturing a light guide element according to a second preferred embodiment of the present invention, which is substantially the same as the method for manufacturing the light guide element according to the first embodiment, except that the step of removing material includes:
a machining tool 30 is provided, the machining tool 30 has a conical space 302, and the conical space 302 corresponds to the shape of the element blank 34. The machining tool 30 is preferably made of a material having a hardness higher than that of the substrate 32.
The machining tool 30 is rotated and the machining tool 30 is driven to remove material from the first side 322 toward the second side 324 of the substrate 32 until the material penetrates the second side 324.
Thus, the rough device blank 34 is located in the conical space 302, and the light guide device is formed after the rough device blank 34 is subjected to the subsequent annealing operation.
In addition to the conical light guide elements of the above embodiments, the light guide elements may be processed into a polygonal cone shape (a shape of a triangle or more) or an elliptical cone shape (i.e., an elliptical shape in a transverse cross section).
Fig. 14 shows a light guide element 36 of a third preferred embodiment, wherein the light guide element 36 has a flat-topped triangular pyramid shape.
Fig. 15 shows a fourth preferred embodiment of a light directing element 38, the light directing element 38 being in the shape of a flattened quadrangular pyramid.
Fig. 16 and 17 show a light guide element 40 according to a fifth preferred embodiment, in which the light guide element 40 includes a first section 402 and a second section 404, the first section 402 has a first end face 402a, the second section 404 has a second end face 404a, the first section 402 and the second section 404 are both conical, and the half taper angle α 1 of the first section 402 is greater than the half taper angle α 2 of the second section 404.
FIG. 18 shows a sixth preferred embodiment of a light guiding element 42. the light guiding element 42 comprises a first segment 422 and a second segment 424, the first segment 422 has a first end face 422a, the second segment 424 has a second end face 424 a. the half taper angle α 1 of the first segment is smaller than the half taper angle α 2 of the second segment.
Fig. 19 shows a light guide element 44 according to the seventh preferred embodiment, wherein a side surface 446 of the light guide element 44 extends in an arc in a direction from the first end surface 442 to the second end surface 444.
As described above, the light guide element of the uv light emitting diode module of the present invention can change the incident angle to the second end surface through the total reflection of the side surface, so as to effectively achieve the purpose of concentrating the light of the uv light emitting diode and transmitting the light out, and has a good light output gain.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications to the present invention as described in the specification and claims should be included in the scope of the present invention.

Claims (16)

1. An ultraviolet LED module comprises
An ultraviolet light emitting diode chip having a light-emitting surface for emitting ultraviolet light;
the light guide element is conical and provided with a first end face and a second end face which are parallel, and a side face is connected between the first end face and the second end face; the first end face is connected with the light emitting face.
2. The led module of claim 1, wherein the light guide element is made of sapphire, single crystal aluminum nitride, quartz or calcium fluoride.
3. The led module of claim 1, wherein the first end surface and the light-emitting surface are bonded together.
4. The led module of claim 1, wherein the first end surface is directly bonded to the light-emitting surface.
5. The led module of claim 1, wherein the light guide element has a half-cone angle, the half-cone angle being less than 45 degrees.
6. The UV LED module of claim 5, wherein the half-cone angle is between 5-35 degrees.
7. The led module of claim 1, wherein the light guide element is cone-shaped, polygonal cone-shaped, or elliptical cone-shaped.
8. The led module of claim 1, wherein the light guide element comprises a first section and a second section, the first section has the first end surface, the second section has the second end surface, and the half cone angle of the first section is larger than that of the second section.
9. The led module of claim 1, wherein the light guide element comprises a first section and a second section, the first section has the first end surface, the second section has the second end surface, and the half cone angle of the first section is smaller than that of the second section.
10. The led module of claim 1, wherein the side surface of the light guide element extends in an arc in a direction from the first end surface to the second end surface.
11. The led uv module of claim 1, wherein the led uv chip has a maximum length; the distance between the first end face and the second end face of the light guide element is more than two times of the maximum length.
12. The led module of claim 1, wherein the side surface has a centerline roughness average of no more than 0.1 μm.
13. A method for manufacturing a light guide element comprises the following steps:
providing a substrate, wherein the substrate can be penetrated by ultraviolet light and is provided with a first surface and a second surface which are opposite;
selecting a region on the first surface of the substrate, and removing the material around the region to remove the substrate part around the region until penetrating through the first surface and the second surface, forming a conical element rough blank on the substrate part in the region, wherein the element rough blank has a first end surface, a second end surface and a side surface, and the side surface is connected between the first end surface and the second end surface;
annealing the element rough blank at 1650-2000 ℃ for more than 2 hours;
after the annealing operation, the element rough blank forms the light guide element.
14. The method of claim 13, wherein the step of removing material comprises removing the portion of the substrate around the region layer by layer in a layered manner around the region with a laser beam.
15. The method according to claim 14, wherein the removing material is formed by laser beam during the removing of the portion of each layer of the substrate.
16. The method of claim 13, wherein the step of removing material comprises:
providing a processing cutter, wherein the processing cutter is provided with a conical space, and the conical space corresponds to the shape of the element rough blank;
and rotating the processing cutter and driving the processing cutter to remove materials from the first surface to the second surface until the material penetrates through the second surface.
CN201810838380.4A 2018-07-26 2018-07-26 Ultraviolet light emitting diode module and manufacturing method of light guide element Pending CN110767780A (en)

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Application Number Priority Date Filing Date Title
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101438201A (en) * 2006-05-03 2009-05-20 3M创新有限公司 LED extractor composed of high index glass
CN101449098A (en) * 2006-01-11 2009-06-03 光处方革新有限公司 Optical manifold for light-emitting diodes
CN101598292A (en) * 2008-06-06 2009-12-09 鸿富锦精密工业（深圳）有限公司 LED light source module
CN201852044U (en) * 2010-10-25 2011-06-01 苏州向隆塑胶有限公司 Light guide component
CN104733570A (en) * 2013-12-18 2015-06-24 丰田合成株式会社 Planar Light Source and Method for Producing Light-Emitting Device
CN105388558A (en) * 2015-12-17 2016-03-09 华南理工大学 Concentric-circular-arc-curve-arrangement micro-lens array light-equalization plate and manufacturing method thereof
CN206098452U (en) * 2016-04-22 2017-04-12 广州市熠芯节能服务有限公司 Leaded light post and light emitting module
TW201807854A (en) * 2016-06-03 2018-03-01 康寧公司 Light extraction apparatus and methods for OLED displays and OLED displays using same
CN108137382A (en) * 2016-05-03 2018-06-08 株式会社Lg化学 Borosilicate glass, the light guide plate and its manufacturing method for including it

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101449098A (en) * 2006-01-11 2009-06-03 光处方革新有限公司 Optical manifold for light-emitting diodes
CN101438201A (en) * 2006-05-03 2009-05-20 3M创新有限公司 LED extractor composed of high index glass
CN101598292A (en) * 2008-06-06 2009-12-09 鸿富锦精密工业（深圳）有限公司 LED light source module
CN201852044U (en) * 2010-10-25 2011-06-01 苏州向隆塑胶有限公司 Light guide component
CN104733570A (en) * 2013-12-18 2015-06-24 丰田合成株式会社 Planar Light Source and Method for Producing Light-Emitting Device
CN105388558A (en) * 2015-12-17 2016-03-09 华南理工大学 Concentric-circular-arc-curve-arrangement micro-lens array light-equalization plate and manufacturing method thereof
CN206098452U (en) * 2016-04-22 2017-04-12 广州市熠芯节能服务有限公司 Leaded light post and light emitting module
CN108137382A (en) * 2016-05-03 2018-06-08 株式会社Lg化学 Borosilicate glass, the light guide plate and its manufacturing method for including it
TW201807854A (en) * 2016-06-03 2018-03-01 康寧公司 Light extraction apparatus and methods for OLED displays and OLED displays using same

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