CN110767569A - Reaction chamber and semiconductor heat treatment equipment - Google Patents
Reaction chamber and semiconductor heat treatment equipment Download PDFInfo
- Publication number
- CN110767569A CN110767569A CN201810834696.6A CN201810834696A CN110767569A CN 110767569 A CN110767569 A CN 110767569A CN 201810834696 A CN201810834696 A CN 201810834696A CN 110767569 A CN110767569 A CN 110767569A
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- pipe
- tube
- hole
- reaction chamber
- furnace
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention provides a reaction chamber and semiconductor heat treatment equipment, which comprises an inner furnace tube, an outer furnace tube sleeved on the periphery of the inner furnace tube and an air inlet tube, wherein the air inlet tube comprises a first tube part, a second tube part and a third tube part which are sequentially connected in series and communicated; the air outlet end of the first pipe part extends into a first through hole arranged on the inner furnace pipe, and the first pipe part is communicated with the interior of the inner furnace pipe through the first through hole; the second pipe part is arranged between the inner furnace pipe and the outer furnace pipe, and the gas inlet end of the third pipe part extends to the outside of the outer furnace pipe through a second through hole arranged on the outer furnace pipe; the first pipe part is matched with the first through hole, and the third pipe part is fixed at the second through hole, so that the air inlet pipe is integrally fixed. The gas inlet pipe fixing device can improve the fixing stability of the gas inlet pipe, can prevent the gas inlet pipe from colliding with a substrate, reduces loss, prevents process gas from being influenced by the structure of the gas inlet pipe, improves the distribution uniformity of the process gas in a reaction chamber, and improves the process effect of semiconductor heat treatment.
Description
Technical Field
The invention relates to the technical field of semiconductor heat treatment equipment, in particular to a reaction chamber and semiconductor heat treatment equipment.
Background
At present, semiconductor heat treatment equipment is important process equipment for manufacturing integrated circuits, and mainly comprises a reaction chamber and a quartz gas inlet pipe, wherein process gas enters the reaction chamber through the quartz gas inlet pipe. The gas outlet position of the quartz gas inlet pipe and the structure of the quartz gas inlet pipe can influence the distribution of the process gas in the reaction chamber, and further influence the process effect of semiconductor heat treatment, so that the installation position and the stability of the quartz gas inlet pipe are very important for semiconductor heat treatment equipment.
As shown in fig. 1, in a conventional semiconductor thermal processing apparatus, a gas supply pipe 11 includes a horizontal portion and a vertical portion, wherein the vertical portion is located in a reaction chamber, one end of the horizontal portion is connected to the vertical portion, and the other end passes through a wall 12 of the reaction chamber and extends outward. The process gas enters the reaction chamber through the horizontal portion and the vertical portion in sequence. In addition, a bracket 13 is further provided in the reaction chamber below the vertical portion, the bracket 13 has a screw hole 13, a bolt 14 is installed in the screw hole 13, the upper end of the bolt 14 abuts against the horizontal portion of the intake pipe 11 to support the intake pipe 11, and the position of the intake pipe 11 can be adjusted by rotating the bolt 14.
In the prior art shown in fig. 1, the gas inlet pipe 11 is only supported by the bolt 14, the gas inlet pipe 11 is easily inclined, the position of the gas outlet of the gas inlet pipe 11 is changed, the distribution of the process gas in the reaction chamber is affected, the bolt 14 directly abuts against the bottom of the gas inlet pipe 11, the bottom wall of the gas inlet pipe 11 is easily broken, and the gas inlet pipe 11 is arranged inside the reaction chamber, the structure of the gas inlet pipe 11 can affect the uniformity of the gas flow and the temperature of the process gas, if the gas inlet pipe 11 is fixed to fail, the gas inlet pipe 11 can be inclined and collide with a substrate in the reaction chamber, so that serious loss is caused, and the temperature in the reaction chamber is high, the bolt 14 and the threaded hole 13 are easily clamped or loosened to affect the normal use of the gas.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a reaction chamber and semiconductor heat treatment equipment, which can improve the fixing stability of an air inlet pipe, prevent the air inlet pipe from colliding with a substrate, reduce loss, prevent process gas from being influenced by the structure of the air inlet pipe, improve the distribution uniformity of the process gas in the reaction chamber, and further improve the process effect of semiconductor heat treatment.
The reaction chamber comprises an inner furnace tube, an outer furnace tube sleeved on the periphery of the inner furnace tube, and an air inlet tube, wherein the air inlet tube comprises a first tube part, a second tube part and a third tube part which are sequentially connected in series and communicated, wherein,
the inner furnace tube is provided with a first through hole; the air outlet end of the first pipe part extends into the first through hole, and the first pipe part is communicated with the interior of the inner furnace pipe through the first through hole;
the second pipe part is arranged between the inner furnace pipe and the outer furnace pipe;
the outer furnace tube is provided with a second through hole; the gas inlet end of the third pipe part extends to the outside of the outer furnace pipe through the second through hole;
the first pipe part is matched with the first through hole, and the third pipe part is fixed at the second through hole, so that the air inlet pipe is integrally fixed.
Preferably, the diameter of the first through hole is greater than or equal to the outer diameter of the first pipe part; and, when the diameter of the first through hole is larger than the outer diameter of the first pipe part, the first pipe part contacts the first through hole to define the position of the first pipe part.
Preferably, the second pipe portion is attached to the inner side wall of the outer furnace pipe.
Preferably, the first through hole is formed in the pipe wall of the inner furnace pipe in a penetrating manner along the thickness direction of the pipe wall; the pipe wall of the outer furnace pipe penetrates along the thickness direction of the pipe wall to form the second through hole;
the first pipe part is horizontally arranged;
the third pipe part is horizontally arranged.
Preferably, the third pipe portion has an outer diameter larger than an outer diameter of the second pipe portion; and, the intake pipe still includes transition pipe portion, transition pipe portion concatenates between third pipe portion and second pipe portion, and the external diameter at the both ends of transition pipe portion respectively with third pipe portion equals with the second pipe portion, and the external diameter of transition pipe portion from the second pipe portion to the third pipe portion gradually increases.
Preferably, the outer furnace tube further comprises a fixed joint, the fixed joint is arranged on the outer peripheral wall of the outer furnace tube, a fixed hole is formed in the fixed joint, and the third tube part is arranged in the fixed hole and used for fixing the third tube part in the second through hole.
Preferably, a seal ring is provided between the fixing hole and the third pipe portion.
Preferably, the number of the sealing rings is at least two, and the sealing rings are arranged at intervals along the axial direction of the third pipe part.
Preferably, the reaction chamber further comprises a connecting pipe, a part of the connecting pipe is positioned in the fixing hole and is sleeved on the third pipe part; the rest part of the connecting pipe is positioned outside the fixed joint and is used for connecting an air source; and a seal ring is provided between the connection pipe and the third pipe portion.
A semiconductor heat treatment device comprises the reaction chamber.
The invention has the following beneficial effects:
according to the reaction chamber provided by the invention, the gas outlet end of the first pipe part of the gas inlet pipe extends into the first through hole of the inner furnace pipe, the third pipe part of the gas inlet pipe is fixed in the second through hole and does not move, so that the gas inlet pipe can be prevented from inclining and rotating, the first pipe part is matched with the first through hole, the gas inlet pipe can be integrally fixed and does not move under the combined action of the first pipe part and the third pipe part fixed in the second through hole, meanwhile, the gas inlet pipe is positioned at the outer side of the inner furnace pipe, the gas inlet pipe can be prevented from colliding with a substrate, and the gas distribution in the inner furnace pipe is not influenced by the structure of the gas inlet pipe, so that the gas distribution uniformity in the reaction chamber can be improved, and the.
According to the semiconductor heat treatment equipment provided by the invention, by adopting the reaction chamber provided by the invention, the fixing stability of the gas inlet pipe can be improved, the gas inlet pipe can be prevented from colliding with a substrate, the loss is reduced, the process gas is not influenced by the structure of the gas inlet pipe, the distribution uniformity of the process gas in the reaction chamber is improved, and the process effect of semiconductor heat treatment is improved.
Drawings
FIG. 1 is a schematic diagram of a reaction chamber in the prior art;
FIG. 2 is a schematic structural view of a reaction chamber and a semiconductor thermal processing apparatus according to the present invention;
FIG. 3 is a schematic structural view of an air inlet tube provided in the present invention;
FIG. 4 is a schematic structural view of the first tube and the second tube in the reaction chamber according to the present invention;
FIG. 5 is a schematic structural view of a first via in the present invention;
FIG. 6 is a schematic structural view of the second tube and the third tube in the reaction chamber according to the present invention;
description of reference numerals:
11-an air inlet pipe; 12-the reaction chamber wall; 13-a threaded hole; 14-a bolt; 2-inner furnace tube; 21-a first via; 3-outer furnace tube; 4, an air inlet pipe; 41-a first tube part; 42-a second tube portion; 43-a third tube portion; 44-a transition duct portion; 5-fixing the joint; 51-a sealing ring; 6-connecting pipe.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber provided by the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 2-6, the present embodiment provides a reaction chamber, which includes an inner furnace tube 2, an outer furnace tube 3 sleeved on the outer periphery of the inner furnace tube 2, and an air inlet tube 4, wherein the air inlet tube 4 includes a first tube portion 41, a second tube portion 42, and a third tube portion 43 connected in series and in communication with each other, and a first through hole 21 is formed on the inner furnace tube 2; a second through hole is arranged on the outer furnace tube 3; the air outlet end of the first pipe part 41 extends into the first through hole 21, the first pipe part 41 is communicated with the inside of the inner furnace tube 2 through the first through hole 21, and the other end is connected with the second pipe part 42; the second pipe portion 42 is provided between the inner furnace pipe 2 and the outer furnace pipe 3, and is connected to the third pipe portion 43; the air inlet end of the third pipe part 43 extends to the outside of the outer furnace tube 3 through the second through hole; the first pipe portion 41 is fitted to the first through hole 21, and the third pipe portion 43 is fixed to the second through hole, so that the air inlet pipe 4 is integrally fixed.
It is through stretching into the first through-hole 21 of interior stove pipe 2 with the end of giving vent to anger of the first pipe portion 41 of intake pipe 4, fix the third pipe portion 43 of intake pipe 4 in the second through-hole motionless simultaneously, can avoid intake pipe 4 to take place slope and rotation, and first pipe portion 41 cooperatees with first through-hole 21, in order can make intake pipe 4 whole fixed motionless with the third pipe portion 43 combined action of fixing in the second through-hole, and simultaneously, because intake pipe 4 is located interior stove pipe 2's the outside, can prevent intake pipe 4 and substrate collision, and the gas distribution in interior stove pipe 2 can not receive the influence of intake pipe 4 self structure, thereby can improve the gas distribution homogeneity in the reaction chamber, thereby can improve technology homogeneity.
Specifically, the first through hole 21 restricts the position of the first pipe portion 41, and the third pipe portion 43 is fixed to the second through hole, and the first pipe portion 41 may be fixed, that is, the position of the third pipe portion 43 may be restricted, and the first pipe portion 41 may be fixed by fitting the first pipe portion 41 to the first through hole 21. In this way, the entire intake pipe 4 can be fixed by the principle that the first pipe portion 41 and the third pipe portion 43 define a straight line between the two points, with the first and third pipe portions 41 and 43 being the first and second fixed points.
In practical applications, the entire gas inlet tube 4 may be made of a corrosion-resistant material such as quartz, ceramic, etc. to prevent the substrate from being contaminated by the process gas corroding the gas inlet tube 4. Alternatively, only the first pipe portion 41 may be made of a corrosion-resistant material, and the second pipe portion 42 and the third pipe portion 43 located outside the inner furnace tube 2 may be made of any other material. Optionally, the second tube portion 42 and the third tube portion 43 may be made of a material with high strength to improve the bearing capacity to external force, and especially for the third tube portion 43, the strength of the third tube portion 43 is improved to improve the stability of the third tube portion 43 fixed in the second through hole.
In the present embodiment, the outer wall of the first pipe portion 41 contacts the inner wall of the first through hole 21 to define the position of the first pipe portion 41, wherein the diameter of the first through hole 21 is slightly larger than the outer diameter of the first pipe portion 41, and a gap of one millimeter is provided therebetween, which is designed to facilitate the installation and adjustment of the first pipe portion 41, however, the gap between the first through hole 21 and the first pipe portion 41 is not limited thereto, and may be smaller than one millimeter or larger than one millimeter, and in addition, the diameter of the first through hole 21 may be equal to the outer diameter of the first pipe portion 41.
In this embodiment, the second pipe portion 42 is attached to the inner sidewall of the outer furnace pipe 3, so that when the inner furnace pipe 2 is backfilled in vacuum, the second pipe portion 42 can lean against the inner sidewall of the outer furnace pipe 3, thereby avoiding the influence of the airflow between the outer furnace pipe 3 and the inner furnace pipe 2, and the air inlet pipe 4 is deformed or collided.
In this embodiment, the inner furnace tube 2 has a first through hole 21 formed on the wall thereof along the thickness direction thereof, the outer furnace tube 3 has a second through hole formed on the wall thereof along the thickness direction thereof, the first through hole 21 is higher than the second through hole, and the process gas flows into the inner furnace tube 2 from the third tube portion 43, the second tube portion 42 and the first tube portion 41 in sequence. However, the positions of the first through hole 21 and the second through hole are not limited to this, and in practical applications, the first through hole 21 may be lower than the second through hole, or the positions of the first through hole 21 and the second through hole may be flush, and the structures of the third pipe portion 43, the second pipe portion 42, and the first pipe portion 41 may be designed adaptively according to the positions of the first through hole 21 and the second through hole.
In the present embodiment, the first pipe portion 41 is horizontally disposed in the first through hole 21, so that the process product in the inner furnace tube 2 can be prevented from blocking the air inlet of the first pipe portion 41 when depositing downward, and in addition, the first pipe portion 41 can also be disposed obliquely downward and toward the inside of the inner furnace tube 2, and the product can be prevented from falling at the air inlet to block the air inlet; the third pipe portion 43 is horizontally disposed in the second through hole; the second pipe part 42 is vertically arranged between the inner furnace pipe 2 and the outer furnace pipe 3, and the vertically arranged second pipe part 42 can be completely attached to the circular inner wall of the outer furnace pipe 3.
In the present embodiment, the outer diameter of the third pipe portion 43 is larger than the outer diameter of the second pipe portion 42, and the intake pipe 4 further includes a transition pipe portion 44, the transition pipe portion 44 is connected in series between the third pipe portion 43 and the second pipe portion 42, the outer diameters of both ends of the transition pipe portion 44 are equal to the third pipe portion 43 and the second pipe portion 42, respectively, and the outer diameter of the transition pipe portion 44 gradually increases from the second pipe portion 42 to the third pipe portion 43. With the transition pipe portion 44, the outer diameter of the third pipe portion 43 can be increased while ensuring that the outer diameter of the second pipe portion 42 does not change. Since the third pipe portion 43 is a main fixing portion and receives a large external force, the third pipe portion 43 needs to have a high strength, and therefore, the strength of the third pipe portion 43 can be increased by increasing the outer diameter of the third pipe portion 43, so that the external force receiving capacity can be increased, the stability of fixing the third pipe portion 43 in the second through hole can be increased, and the possibility of deformation and inclination of the air pipe 4 due to the external force can be reduced.
In the present embodiment, the reaction chamber further includes a fixing joint 5, the fixing joint 5 is disposed on the outer circumferential wall of the outer furnace tube 3, and a fixing hole is disposed in the fixing joint 5, an end face of the fixing hole is connected with an outer end face of the second through hole, and the third tube portion 43 is disposed in the fixing hole for fixing the third tube portion 43 in the second through hole.
In the present embodiment, the sealing ring 51 is disposed between the fixing hole and the third pipe portion 43, and the friction force between the sealing ring 51 and the third pipe portion 43 prevents the third pipe portion 43 from being separated from the fixing joint 5 during evacuation, thereby improving the fixing effect of the fixing joint 5 on the third pipe portion 43, improving the sealing effect between the third pipe portion 43 and the fixing joint 5, and particularly ensuring the sealing effect during vacuum backfill.
In this embodiment, the number of the sealing rings 51 is at least two, and the sealing rings 51 are arranged at intervals along the axial direction of the third pipe portion 43, so that the fixing effect and the sealing effect between the fixing joint 5 and the third pipe portion 43 can be increased by the plurality of the sealing rings 51, and the normal operation of the process can be ensured even when one sealing ring 51 fails.
In this embodiment, the reaction chamber further includes a connecting pipe 6, a part of the connecting pipe 6 is located in the fixing hole and is sleeved on the third pipe portion 43, the rest of the connecting pipe 6 is located outside the fixing joint 5 and is used for connecting with a gas source, a process gas flows out of the gas source and flows into the third pipe portion 43 through the connecting pipe 6, and a sealing ring 51 is arranged between the connecting pipe 6 and the third pipe portion 43, so that not only is the vacuum pumping prevented, but also the third pipe portion 43 is separated from the connecting pipe 6, and the process gas is prevented from leaking out from between the connecting pipe 6 and the third pipe portion 43, thereby improving the fixing effect and the sealing effect of the connecting pipe 6 and the third pipe portion 43.
As another technical solution, the present invention further provides a semiconductor thermal processing apparatus, which can improve the fixing stability of the gas inlet pipe 4, prevent the gas inlet pipe 4 from colliding with a substrate, reduce loss, prevent the process gas from being affected by the structure of the gas inlet pipe 4, and improve the uniformity of the distribution of the process gas in the reaction chamber, thereby improving the process effect of semiconductor thermal processing.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A reaction chamber comprises an inner furnace tube and an outer furnace tube sleeved on the periphery of the inner furnace tube, and is characterized by also comprising an air inlet tube, wherein the air inlet tube comprises a first tube part, a second tube part and a third tube part which are sequentially connected in series and communicated with each other,
the inner furnace tube is provided with a first through hole; the air outlet end of the first pipe part extends into the first through hole, and the first pipe part is communicated with the interior of the inner furnace pipe through the first through hole;
the second pipe part is arranged between the inner furnace pipe and the outer furnace pipe;
the outer furnace tube is provided with a second through hole; the gas inlet end of the third pipe part extends to the outside of the outer furnace pipe through the second through hole;
the first pipe part is matched with the first through hole, and the third pipe part is fixed at the second through hole, so that the air inlet pipe is integrally fixed.
2. The reaction chamber of claim 1, wherein the diameter of the first through hole is greater than or equal to the outer diameter of the first tube portion; and, when the diameter of the first through hole is larger than the outer diameter of the first pipe part, the first pipe part contacts the first through hole to define the position of the first pipe part.
3. The reaction chamber of claim 1, wherein the second tube portion is attached to an inner sidewall of the outer furnace tube.
4. The reaction chamber according to any one of claims 1 to 3, wherein the first through hole is formed on the tube wall of the inner furnace tube in a penetrating manner along the thickness direction of the tube wall; the pipe wall of the outer furnace pipe penetrates along the thickness direction of the pipe wall to form the second through hole;
the first pipe part is horizontally arranged;
the third pipe part is horizontally arranged.
5. The reaction chamber according to any one of claims 1 to 3 wherein the third tube portion has an outer diameter greater than the outer diameter of the second tube portion; and, the intake pipe still includes transition pipe portion, transition pipe portion concatenates between third pipe portion and second pipe portion, and the external diameter at the both ends of transition pipe portion respectively with third pipe portion equals with the second pipe portion, and the external diameter of transition pipe portion from the second pipe portion to the third pipe portion gradually increases.
6. The reaction chamber according to any one of claims 1 to 3, further comprising a fixing joint provided on an outer peripheral wall of the outer furnace tube and having a fixing hole provided therein, wherein the third tube portion is provided in the fixing hole for immobilizing the third tube portion in the second through hole.
7. The reaction chamber of claim 6 wherein a sealing ring is disposed between the securing hole and the third tube portion.
8. The reaction chamber of claim 7 wherein the number of seals is at least two and is spaced axially along the third tube portion.
9. The reaction chamber of claim 8, further comprising a connecting tube, a portion of the connecting tube being located in the fixing hole and being sleeved on the third tube portion; the rest part of the connecting pipe is positioned outside the fixed joint and is used for connecting an air source; and a seal ring is provided between the connection pipe and the third pipe portion.
10. A semiconductor thermal processing apparatus comprising the reaction chamber of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810834696.6A CN110767569A (en) | 2018-07-26 | 2018-07-26 | Reaction chamber and semiconductor heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810834696.6A CN110767569A (en) | 2018-07-26 | 2018-07-26 | Reaction chamber and semiconductor heat treatment equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110767569A true CN110767569A (en) | 2020-02-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810834696.6A Pending CN110767569A (en) | 2018-07-26 | 2018-07-26 | Reaction chamber and semiconductor heat treatment equipment |
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| Country | Link |
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| CN (1) | CN110767569A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281575A (en) * | 2003-03-13 | 2004-10-07 | Seiko Epson Corp | Thermal treatment furnace, and method of manufacturing thermal treatment device and semiconductor device |
| CN1949458A (en) * | 2005-10-13 | 2007-04-18 | 应用材料股份有限公司 | Reaction chamber with opposing pockets for gas injection and exhaust |
| KR20130048520A (en) * | 2011-11-02 | 2013-05-10 | 우범제 | Gas distribution system of vertical diffusion furnace for manufacturing semiconductor |
-
2018
- 2018-07-26 CN CN201810834696.6A patent/CN110767569A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281575A (en) * | 2003-03-13 | 2004-10-07 | Seiko Epson Corp | Thermal treatment furnace, and method of manufacturing thermal treatment device and semiconductor device |
| CN1949458A (en) * | 2005-10-13 | 2007-04-18 | 应用材料股份有限公司 | Reaction chamber with opposing pockets for gas injection and exhaust |
| KR20130048520A (en) * | 2011-11-02 | 2013-05-10 | 우범제 | Gas distribution system of vertical diffusion furnace for manufacturing semiconductor |
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Application publication date: 20200207 |
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