CN110767565A - Method for measuring anti-sputtering rate - Google Patents
Method for measuring anti-sputtering rate Download PDFInfo
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- CN110767565A CN110767565A CN201911052501.3A CN201911052501A CN110767565A CN 110767565 A CN110767565 A CN 110767565A CN 201911052501 A CN201911052501 A CN 201911052501A CN 110767565 A CN110767565 A CN 110767565A
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- thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The application discloses a method for measuring a reverse sputtering rate, which comprises the following steps: forming a first thin film layer on the wafer through a sputtering process; forming a second thin film layer on the first thin film layer by a sputtering process and a reverse sputtering process, wherein the first thin film layer and the second thin film layer comprise the same material; and calculating the sputtering rate according to the thickness difference of the first thin film layer and the second thin film layer and the time for forming the second thin film layer. This application is through sputtering deposit first thin layer on the wafer, form the second thin layer through sputtering and anti-sputtering technology on first thin layer, through the thickness of first thin layer and second thin layer, the time calculation that forms the second thin layer obtains the anti-sputtering rate, because first thin layer and second thin layer all form on same wafer, consequently only need use a slice wafer can measure and obtain the anti-sputtering rate in the measurement process, reduced the measuring time when having improved the rate of utilization of wafer, improved measurement of efficiency.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a method for measuring a sputtering rate in a semiconductor manufacturing process.
Background
The Physical Vapor Deposition (PVD) technique is a technique of physically vaporizing the surface of a material source (solid or liquid) into gaseous atoms, molecules, or partially ionizing the gaseous atoms into ions under vacuum, and depositing a thin film on the surface of a substrate by low-pressure gas (or plasma). The main methods of physical vapor deposition include vacuum evaporation, sputtering, arc plasma, ion plating, and molecular beam epitaxy.
Referring to fig. 1, which shows a schematic diagram of a sputter coating process, as shown in fig. 1, a chamber 110 of a PVD apparatus is fixed with a target (also referred to as a material source or a sputtered object, and illustrated as a copper target in fig. 1) 101 and a substrate 102, the target 101 is connected with a cathode, the substrate 102 is connected with an anode, and a copper thin film 103 is grown on the surface of the substrate 102 by bombarding the target 101 with sputtered particles generated from a sputtering gas.
Reverse sputtering refers to etching a thin film deposited on a substrate by plasma in a sputter coating process. Referring to fig. 2, which shows a schematic diagram of reverse sputtering, as shown in fig. 2, a chamber 110 of a PVD apparatus is fixed with a target 101 and a substrate 102, and a copper thin film 103 grown on the substrate 102 can be etched by bombarding the copper thin film 103 with increased copper ions (Cu +).
The sputtering rate is a parameter reflecting the etching speed in the sputtering process, and in the related technology, the measuring method of the sputtering rate is as follows: forming a thickness H on the wafer 1 by sputtering1The film is reversely sputtered while depositing the film on the wafer 2 by the sputtering process, and finally the thickness H is formed2Is calculated to obtain the thickness of the etched film, i.e., (H)1-H2) Then dividing the time of the back sputtering to obtain the back sputtering rate.
Disclosure of Invention
The application provides a method for measuring a sputtering rate, which can solve the problem that the manufacturing cost is high due to the fact that the wafer utilization rate is low in a method for measuring the sputtering rate in the related technology.
In one aspect, an embodiment of the present application provides a method for measuring a sputtering rate, including:
forming a first thin film layer on the wafer through a sputtering process;
forming a second thin film layer on the first thin film layer by the sputtering process and the reverse sputtering process at the same time, wherein the first thin film layer and the second thin film layer comprise the same material;
and calculating the sputtering rate according to the first thickness of the first thin film layer, the sum of the thicknesses of the first thin film layer and the second thin film layer and the time for forming the second thin film layer.
Optionally, the first thin film layer and the second thin film layer are metal thin film layers.
Optionally, the metal thin film layer is a copper thin film layer.
Optionally, the forming a first thin film layer by a sputtering process includes:
and bombarding a copper target by argon ions, and depositing and forming the first thin film layer on the wafer.
Optionally, forming a second thin film layer on the first thin film layer by the sputtering process and the reverse sputtering process, including:
and bombarding the copper target material by argon ions, depositing a copper layer on the first thin film layer, bombarding the copper layer deposited on the first thin film layer by copper ions, etching the copper layer deposited on the first thin film layer, and forming a second thin film layer on the first thin film layer.
Optionally, the obtaining of the sputtering rate through calculating the sum of the first thickness of the first thin film layer, the thickness of the first thin film layer and the thickness of the second thin film layer, and the time for forming the second thin film layer includes:
calculating the sputtering rate according to the following formula by using the sum of the first thickness and the time for forming the second thin film layer:
the sputtering rate (A H)1-H)/t
Wherein A is the rate ratio coefficient of copper element in different sputtering environments, and H1H is the sum of the first thickness, and t is the time for forming the second thin film layer.
Optionally, before forming the second thin film layer on the first thin film layer by the sputtering process and the reverse sputtering process, the method further includes:
measuring the first thickness through the first thin film layer;
before calculating the sputter rate through the first thickness of the first thin film layer, the second thickness of the second thin film layer and the time for forming the second thin film layer, the method further comprises the following steps:
measuring the sum of said thicknesses through said first film layer and said second film layer.
Optionally, the measuring the first thickness through the first thin film layer includes:
measuring a first bulk resistance of the first thin film layer;
and calculating to obtain the first thickness according to the first block resistance and the resistivity of the copper.
Optionally, said measuring the sum of said thicknesses through said first thin film layer and said second thin film layer comprises:
measuring a second sheet resistance of the first and second films;
and calculating to obtain the sum of the thicknesses according to the second sheet resistance and the conductivity of the copper.
The technical scheme at least comprises the following advantages:
through sputtering deposit first thin layer on the wafer, form the second thin layer through sputtering and anti-sputtering technology on first thin layer, through the thickness of first thin layer and second thin layer, the time calculation that forms the second thin layer obtains the anti-sputtering rate, because first thin layer and second thin layer all form on same wafer, consequently only need use a slice wafer can measure and obtain the anti-sputtering rate in the measurement process, reduced the measuring time when having improved the rate of utilization of wafer, improved measurement of efficiency.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a sputter coating process;
FIG. 2 is a schematic diagram of a reverse sputtering process;
FIG. 3 is a flow chart of a method of measuring the sputter rate provided by an exemplary embodiment of the present application;
FIG. 4 is a schematic illustration of a thin film layer formed based on a method of measuring a sputter rate provided by an exemplary embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be configured in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Example 1:
referring to fig. 3, a flow chart of a method for measuring a sputtering rate provided by an exemplary embodiment of the present application is shown, the method including:
For example, referring to fig. 1, a wafer may be placed in a PVD chamber, and after the PVD chamber is evacuated, a target disposed in the PVD chamber is bombarded by sputtering particles to deposit a first thin film layer on the wafer. Referring to fig. 4, a first thin film layer 410 is formed on a wafer 400 through a sputtering process, the first thin film layer 410 having a first thickness H1。
For example, referring to fig. 2, a wafer with a first thin film layer formed thereon may be placed in a PVD chamber, the PVD chamber is evacuated, the same target is bombarded by sputtering particles, a thin film is deposited on the first thin film layer, and a second thin film layer is formed after reverse sputtering the thin film deposited on the first thin film layer. Referring to fig. 4, the second thin film layer 420 formed on the first thin film layer 410 has a second thickness H2。
Optionally, the first thin film layer and the second thin film layer are metal thin film layers, and the metal thin film layers may be copper thin film layers.
Optionally, the target in this embodiment is a copper target, and the step 301 of "forming the first thin film layer on the wafer by a sputtering process" includes: and bombarding the copper target by argon ions, and depositing and forming the first thin film layer on the target wafer.
Optionally, the step 302 of forming a second thin film layer on the first thin film layer by a sputtering process and a reverse sputtering process simultaneously, wherein the first thin film layer and the second thin film layer comprise the same material, includes: and bombarding the copper target material by argon ions, depositing a copper layer on the first thin film layer, bombarding the copper layer deposited on the first thin film layer by copper ions, etching the copper layer deposited on the first thin film layer, and forming a second thin film layer on the first thin film layer.
And step 303, calculating the sputtering rate according to the first thickness of the first thin film layer, the sum of the thicknesses of the first thin film and the second thin film layer and the time for forming the second thin film layer.
Optionally, the sputtering rate is calculated by the following formula according to the sum of the first thickness and the thicknesses of the first thin film and the second thin film, and the time for forming the second thin film layer:
the sputtering rate (A H)2-H)/t
Wherein A is the rate ratio coefficient of copper element in different sputtering environments, and H1H is the sum of the thicknesses of the first thin film and the second thin film, and t is the time for forming the second thin film.
In the embodiment, the first thin film layer is sputtered and deposited on the wafer, the second thin film layer is formed on the first thin film layer through sputtering and anti-sputtering processes, the anti-sputtering rate is obtained through time calculation of forming the second thin film layer through the thicknesses of the first thin film layer and the second thin film layer, and the anti-sputtering rate can be measured only by using one wafer in the measuring process because the first thin film layer and the second thin film layer are formed on the same wafer, so that the measuring time is shortened while the utilization rate of the wafer is improved, and the measuring efficiency is improved.
Example 2:
referring to example 1, example 2 differs from example 1 in that: before the step 302 of forming the second thin film layer by the sputtering process and the reverse sputtering process simultaneously, the method further includes: measuring a first thickness through the first thin film layer; before "calculating the sputtering rate according to the sum of the first thickness of the first thin film layer, the thicknesses of the first thin film layer and the second thin film layer, and the time for forming the second thin film layer" in step 303, the method further includes: the sum of the thicknesses is measured through the first film layer and the second film layer.
Optionally, in this embodiment, the "measuring the first thickness through the first thin film layer" includes but is not limited to: measuring a first bulk resistance of the first thin film layer; and calculating to obtain a first thickness according to the first block resistance and the resistivity of the copper.
Illustratively, after forming the first thin film layer, a first bulk resistance R of the first thin film layer is measured1According to the first block resistance R1And a resistivity p of copper, the first thickness being calculated based on the following formula:
H1＝ρ/R1
optionally, in this embodiment, the phrase "sum of thicknesses measured through the first thin film layer and the second thin film layer" includes but is not limited to: measuring a second sheet resistance of the first film and the second film; and calculating to obtain the sum of the thicknesses of the first thin film layer and the second thin film layer according to the second square resistance and the conductivity of the copper.
Illustratively, after forming the second thin film layer, a second sheet resistance R of the first thin film layer and the second thin film layer is measured2(the second sheet resistance is the combined sheet resistance of the first thin film layer and the second thin film layer) according to the second sheet resistance R2And the resistivity p of copper, the sum of thicknesses H being calculated on the basis of the following formula:
H＝ρ/R2
it should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A method for measuring a reverse sputtering rate, comprising:
forming a first thin film layer on the wafer through a sputtering process;
forming a second thin film layer on the first thin film layer by the sputtering process and the reverse sputtering process at the same time, wherein the first thin film layer and the second thin film layer comprise the same material;
and calculating the sputtering rate according to the first thickness of the first thin film layer, the sum of the thicknesses of the first thin film layer and the second thin film layer and the time for forming the second thin film layer.
2. The method of claim 1, wherein the first thin film layer and the second thin film layer are metal thin film layers.
3. The method of claim 2, wherein the metal thin film layer is a copper thin film layer.
4. The method of claim 3, wherein forming the first thin film layer by a sputtering process comprises:
and bombarding a copper target by argon ions, and depositing and forming the first thin film layer on the wafer.
5. The method of claim 4, wherein forming a second thin film layer on the first thin film layer by the sputtering process and the reverse sputtering process simultaneously comprises:
and bombarding the copper target material by argon ions, depositing a copper layer on the first thin film layer, bombarding the copper layer deposited on the first thin film layer by copper ions, etching the copper layer deposited on the first thin film layer, and forming a second thin film layer on the first thin film layer.
6. The method of any of claims 1 to 5, wherein calculating the sputter rate from a sum of a first thickness of the first thin film layer, a thickness of the first thin film layer and the second thin film layer, and a time to form the second thin film layer comprises:
calculating the sputtering rate according to the following formula by using the sum of the first thickness and the time for forming the second thin film layer:
the sputtering rate (A H)1-H)/t
Wherein A is the rate ratio coefficient of copper element in different sputtering environments, and H1H is the sum of the first thickness, and t is the time for forming the second thin film layer.
7. The method of claim 6, wherein prior to forming a second thin film layer on the first thin film layer by the sputtering process and the reverse sputtering process simultaneously, further comprising:
measuring the first thickness through the first thin film layer;
before calculating the sputter rate through the first thickness of the first thin film layer, the second thickness of the second thin film layer and the time for forming the second thin film layer, the method further comprises the following steps:
measuring the sum of said thicknesses through said first film layer and said second film layer.
8. The method of claim 7, wherein said measuring said first thickness through said first thin film layer comprises:
measuring a first bulk resistance of the first thin film layer;
and calculating to obtain the first thickness according to the first block resistance and the resistivity of the copper.
9. The method of claim 8, wherein said measuring a sum of said thicknesses through said first film layer and said second film layer comprises:
measuring a second sheet resistance of the first and second films;
and calculating to obtain the sum of the thicknesses according to the second sheet resistance and the conductivity of the copper.
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Application publication date: 20200207 |