CN110767544A - 一种薄膜电极及其液相自攀爬制备方法与应用 - Google Patents
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Abstract
本发明公开了一种薄膜电极及其液相自攀爬制备方法与应用,所述制备方法包括以下步骤:(1)制备超亲水表面与超疏水层;(2)制备亲/疏水阵列图形;(3)制备薄膜电极。将纳米导电颗粒分散在不互溶的水油界面上,使得其在表面张力的作用下,沿着所述带有亲/疏水阵列图形的衬底的亲水性区域爬升并均匀吸附成膜,生成图形电极。本发明所提供的图形电极制备工艺流程简单高效,避免了对光刻机及其附属设备,以及传统高能耗薄膜电极沉积设备的依赖,极大地降低了器件制备成本,尤其适用于多功能半导体和微纳传感器件的制作。
Description
技术领域
本发明属于电子技术领域,涉及一种薄膜电极及其液相自攀爬制备方法与应用。
背景技术
在半导体和微纳电子器件中,电极往往需要特定的结构,即电极是具有一定图案的图形电极。图形电极的制备一般包括图形转移和电极制备两个环节。
在图形转移的方法中,传统工艺主要采用光刻技术。光刻技术是指在光照作用下,借助光致抗蚀剂(又名光刻胶)将掩膜版上的图形转移到衬底上的技术。其主要过程为:首先,将紫外光(或者电子束、X射线、微离子束、激光等)通过掩膜版辐照到涂布有一层光刻胶薄膜的衬底表面,引起曝光区域的光刻胶发生化学反应;再通过显影液溶解去除曝光区域或未曝光区域的光刻胶(前者称正性光刻胶,后者称负性光刻胶),使掩膜版上的图形被复制到光刻胶薄膜上。光刻技术需要昂贵的设备,特征尺寸越小,投资越大,且工艺制程复杂,所需环境苛刻,需要在洁净环境下进行。
近年来,纳米压印技术也获得了广泛应用。与光刻技术不同的是,纳米压印中图案的形成采用机械转移的方法。该方法中,首先采用电子束刻蚀等手段,在硅或其他衬底上加工出所需要的结构作为模板,然后将模板与涂布有热塑胶、光固化胶等柔性高分子物质的衬底贴合,施加压力,使模板上的图案挤压入衬底,之后通过热、紫外光辐照等手段,使图形固化,之后冷却脱模。移开模板后,用刻蚀液将上一步未完全去除的光刻胶刻蚀掉,露出待加工材料表面,然后使用刻蚀的方法进行加工,完成后移除掩膜,完成图案转移。
按工艺流程的不同,常用的图形电极制备工艺主要包括抬离工艺和刻蚀工艺。
抬离工艺中,将图案转移到衬底上后,采用电子束蒸镀、蒸镀、磁控溅射等薄膜沉积技术,在带有掩膜图案的衬底上沉积电极薄膜,最后利用光刻胶在有机溶剂中的溶解性将其剥离,留下电极图案,完成图形电极制作。
与抬离工艺不同的是,刻蚀工艺首先在洁净衬底上沉积电极薄膜,之后通过光刻技术形成光刻胶掩膜图案,然后采用湿法或干法刻蚀技术选择性腐蚀未被掩膜遮盖部分,最后去掉光刻胶,完成图形电极制作。
无论采用抬离或刻蚀方法制备图形电极,电极薄膜的沉积均需使用真空设备,并采用高能耗的工艺过程蒸发或溅射生长源,使其沉积到目标衬底上。因此,这些工艺制程对高精度设备的依赖较高,造成其工艺复杂,成本高。
鉴于上述问题,本发明提供一种简单高效的低成本薄膜图形电极制备技术,避免了对高成本设备的依赖,尤其适用于多功能半导体和微纳传感器件的制作。
发明内容
为了克服现有技术的缺陷,本发明的目的在于提供一种薄膜电极及其液相自攀爬制备方法与应用,弥补了传统半导体制程设备投资昂贵、工艺复杂的缺陷。本发明的图案转移通过调控衬底表面的亲/疏水性实现,薄膜电极通过液相自攀爬法生长。
本发明的目的是通过以下技术方案之一实现的。
本发明提供了一种薄膜电极的液相自攀爬制备方法,包括以下步骤:
(1)制备超亲水表面与超疏水层:
取衬底,并清洗衬底表面有机物和杂质,对衬底进行羟基化处理,在衬底表面引入羟基,形成超亲水表面;然后生长疏水单分子层,羟基为生长疏水单分子层提供成键位点,疏水单分子层与所述羟基中的氧原子结合,形成超疏水层;
(2)制备亲/疏水阵列图形:
在超疏水层上放置掩膜板,所述掩膜板包括透光部分和不透光部分,用紫外光通过透光部分辐照到超疏水层上,超疏水层分解形成超亲水表面,得带有亲/疏水阵列图形的衬底;
(3)制备薄膜电极:
取生长容器,加入油相、水相和纳米导电颗粒,超声震荡,将带有亲/疏水阵列图形的衬底插入生长容器中,纳米导电颗粒沿着超亲水层爬升,从而形成薄膜电极。
优选地,所述疏水单分子层为带有疏水长链的硅烷或硫醇。
优选地,所述紫外光的波长为UVC波段,辐照时间为30-60 min。
优选地,油相和水相的体积比为1:1~3;所述油相为有机相。
优选地,所述纳米导电颗粒在生长容器中的浓度不高于10 mmol/L。
优选地,所述纳米导电颗粒选自有机导电材料或无机导电材料。
优选地,疏水单分子层为带有疏水长链的全氟十二烷基三氯硅烷。
优选地,超声震荡的时间为5-10 min。
本发明提供了一种所述的液相自攀爬制备方法制备的薄膜电极。
本发明还提供了所述的薄膜电极在半导体及微纳电子器件制备中的应用。
和现有技术相比,本发明具有以下有益效果和优点:
(1)本发明提供的液相自攀爬法不采用光刻流程,不需使用光刻机及其辅助设备,工艺过程复杂性降低,设备成本降低;
(2)本发明提供的液相自攀爬法不采用传统的真空蒸发、电子束蒸镀及射频/直流溅射等薄膜沉积方法,工艺过程节能环保;
(3)本发明提供的液相自攀爬法在一般的化学实验室内即可完成,不依赖于洁净室等无尘环境,灵活性较高;
(4)本发明提供的液相自攀爬法有利于纳米颗粒保持高活性表面,可应用在传感器的制备中。
附图说明
图1为亲/疏水阵列图形制备流程图;
图2为液相自攀爬法电极生长工艺示意图;
附图中:1-衬底;2-超亲水表面;3-超疏水层;4-掩膜板;5-超亲/疏水图形;6-油相;7-纳米导电颗粒;8-水相。
具体实施方式
以下结合具体实施例和附图对本发明的具体实施作进一步说明,但本发明的实施不限于此。
实施例
本实施例提供了一种薄膜电极的液相自攀爬制备方法,包括以下步骤:
(1)制备超亲水层与超疏水层:
取衬底1,并清洗衬底表面有机物和杂质,如图1所示,对衬底1进行表面修饰,首先对衬底1进行羟基化处理,在衬底表面引入羟基,形成超亲水表面2;然后生长疏水单分子层(SAM),所述疏水单分子层SAM为带有疏水长链的全氟十二烷基三氯硅烷。羟基为生长疏水单分子层提供成键位点,在生长过程中,硅烷的烷氧键醇解或水解,与所述羟基中的氧原子结合,疏水长链朝外,形成超疏水层3;
(2)制备亲/疏水阵列图形:
在超疏水层上放置掩膜板4,所述掩膜板4包括透光部分和不透光部分,用紫外光(UV)通过透光部分辐照到超疏水层上,超疏水层分解形成超亲水表面2,得带有亲/疏水阵列图形5的衬底;
(3)制备薄膜电极:
取生长容器,加入油相6、水相8和纳米导电颗粒7,超声震荡5-10 min,将带有亲/疏水图案的衬底插入生长容器中,纳米导电颗粒7沿着超亲水层爬升,从而形成薄膜电极,如图2所示。
所述紫外光的波长为254 nm,辐照30 min。
油相6和水相8的体积比为1:2,Au纳米颗粒的浓度为2.7 mmol/L。本实施例还提供了一种由所述的液相自攀爬制备方法制备的薄膜电极。
所述的薄膜电极可应用在半导体及微纳电子器件制备中,尤其是多功能半导体和微纳传感器件的制作。
以上所述,仅为本发明的较佳实施例而已,并非对本发明做任何形式上的限定。凡本领域的技术人员利用本发明的技术方案对上述实施例作出的任何等同的变动、修饰或演变等,均仍属于本发明技术方案的范围内。
Claims (10)
1.一种薄膜电极的液相自攀爬制备方法,其特征在于,包括以下步骤:
(1)制备超亲水表面与超疏水层:
取衬底,并清洗衬底表面有机物和杂质,对衬底进行羟基化处理,在衬底表面引入羟基,形成超亲水表面;然后生长疏水单分子层,羟基为生长疏水单分子层提供成键位点,疏水单分子层与所述羟基中的氧原子结合,形成超疏水层;
(2)制备亲/疏水阵列图形:
在超疏水层上放置掩膜板,所述掩膜板包括透光部分和不透光部分,用紫外光通过透光部分辐照到超疏水层上,超疏水层分解形成超亲水表面,得带有亲/疏水阵列图形的衬底;
(3)制备薄膜电极:
取生长容器,加入油相、水相和纳米导电颗粒,超声震荡,将带有亲/疏水阵列图形的衬底插入生长容器中,纳米导电颗粒沿着超亲水层爬升,从而形成薄膜电极。
2.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,所述疏水单分子层为带有疏水长链的硅烷或硫醇。
3.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,所述紫外光的波长为UVC波段,辐照时间为30-60 min。
4.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,油相和水相的体积比为1:1~3;所述油相为有机相。
5.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,所述纳米导电颗粒在生长容器中的浓度不高于10 mmol/L。
6.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,所述纳米导电颗粒选自有机导电材料或无机导电材料。
7.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,疏水单分子层为带有疏水长链的全氟十二烷基三氯硅烷。
8.根据权利要求1所述的薄膜电极的液相自攀爬制备方法,其特征在于,超声震荡的时间为5-10 min。
9.一种由权利要求1至8所述的液相自攀爬制备方法制备的薄膜电极。
10.权利要求9所述的薄膜电极在半导体及微纳电子器件制备中的应用。
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