CN110747436A - Indium-aluminum co-doped zinc sulfide film and preparation method thereof - Google Patents
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Abstract
The invention relates to an indium-aluminum co-doped zinc sulfide film and a preparation method thereof, wherein the preparation method comprises the following steps: cleaning a substrate: cleaning the glass substrate by ultrasonic repeated oscillation, and then drying the glass substrate; first evaporation of intrinsic ZnS material: evaporating ZnS material on a glass substrate by electron beams in a vacuum environment to form a first layer of film; doping indium and aluminum: after a first layer of film is formed, firstly, evaporating an elemental In on the first layer of film In vacuum, and evaporating a ZnS material through an electron beam again after the elemental In is evaporated to form a second layer of film; evaporating an Al simple substance on the second layer of film in vacuum; evaporating intrinsic ZnS material for the third time: evaporating an Al simple substance, evaporating a ZnS material by electron beams again to form a third layer of film, and obtaining a doped zinc sulfide film; and (3) rapid annealing: the resulting doped zinc sulfide film was annealed in argon. The indium-aluminum doped zinc sulfide film prepared by vacuum electron beam evaporation has the advantages of easily controllable components, low cost and excellent product performance.
Description
Technical Field
The invention relates to the technical field of zinc sulfide film preparation, in particular to an indium-aluminum co-doped zinc sulfide film and a preparation method thereof.
Background
ZnS is a direct wide band gap semiconductor material of II-VI main group, and the optical band gap is about 3.7eV at room temperature. The ZnS on the earth is rich in raw materials, has excellent photoelectric property, good piezoelectric property and gas sensitivity, and has the characteristics of easy doping and control, so the ZnS has important application in reality.
Since the 90 s of the 20 th century, many groups at home and abroad modify the ZnS thin film by doping, the doping elements mainly studied at present are Ag, Al, Mn, Fe, Cu, etc., for example, in 2008, p.prathap group prepared ZnS: Al thin film by using a near space evaporation method and studied the performance, the electrical rate of the thin film prepared by the group can be as low as 24 Ω · cm, but the optical performance is poor, and the transmittance in the visible light region fluctuates sharply within the range of 65% -91%. In the same year, the k.nagamani group has made more intensive studies on the problem, and a relatively inexpensive chemical method is adopted to prepare a ZnS thin film with an optical transmittance of 85%, and the forbidden band width variation range is 3.54-3.76eV, but the electrical performance is poor.
The existing ZnS film preparation methods, such as Chemical Vapor Deposition (CVD), have the advantages of high film growth rate, good film performance and easy control of impurity level, but the required matrix temperature is high and easy to self-dope, so that the quality reduction problem is inevitable; chemical water bath (CBD) has the advantages that the chemical reaction and the complexation of the deposition liquid can be controlled under the conditions of normal pressure, low temperature (30-90 ℃) and simple and easy control, so that a film is deposited on a substrate, and the defects that the film quality is poor, and especially the adjustable range of the electrical property is narrow; the magnetron sputtering method has the advantages of good film quality and the disadvantages of long preparation period and high cost.
Disclosure of Invention
Therefore, the indium-aluminum co-doped zinc sulfide thin film and the preparation method thereof are needed to be provided, and the problems of low quality, narrow adjustable range of electrical properties and long period and high cost of the zinc sulfide thin film prepared by the conventional zinc sulfide thin film preparation method are solved.
In order to achieve the purpose, the inventor provides a preparation method of an indium-aluminum co-doped zinc sulfide thin film, which comprises the following steps:
cleaning a substrate: cleaning the glass substrate by ultrasonic repeated oscillation, and then drying the glass substrate;
first evaporation of intrinsic ZnS material: evaporating ZnS material on a glass substrate by electron beams in a vacuum environment to form a first layer of film;
doping indium and aluminum: after a first layer of film is formed, firstly, evaporating an elemental In on the first layer of film In vacuum, and evaporating a ZnS material through an electron beam again after the elemental In is evaporated to form a second layer of film; evaporating an Al simple substance on the second layer of film in vacuum;
evaporating intrinsic ZnS material for the third time: evaporating an Al simple substance, evaporating a ZnS material by electron beams again to form a third layer of film, and obtaining a doped zinc sulfide film;
and (3) rapid annealing: the resulting doped zinc sulfide film was annealed in argon.
Further preferably, the substrate cleaning specifically comprises the following steps:
the glass substrate is subjected to ultrasonic cleaning for 15 minutes by deionized water, ultrasonic cleaning for 15 minutes by acetone, ultrasonic cleaning for 15 minutes by ethanol and ultrasonic cleaning for 15 minutes by deionized water, and then is dried in an oven for 30 minutes.
Further preferably, the thicknesses of the first layer film and the third layer film are both 100nm, the thickness of the second layer film is 40nm, the evaporation thickness of the In simple substance is 2.5nm, and the evaporation thickness of the Al simple substance is 3.7 nm.
Further optimized, the evaporation rate of the electron beam evaporation Zns material is
The evaporation rate of the In simple substance is
The evaporation rate of the Al simple substance is
Further preferably, the indium-aluminum doping step is performed for multiple times, and the method further comprises the following steps:
evaporating a ZnS material through an electron beam after evaporating an Al simple substance in the previous indium-aluminum doping step;
and after the ZnS material is evaporated, performing the next In elementary substance evaporation of indium-aluminum doping.
Further optimizing, the doping amount of the In simple substance is 0.5 at.% to 1.5 at.% of the ZnS material.
Further optimizing, the doping amount of the Al simple substance is 4.5 at.% to 5.5 at.% of the ZnS material.
Further optimization, the rapid annealing specifically comprises the following steps:
placing the doped zinc sulfide film which is naturally cooled for 1 hour into a quartz tube sealed by a rubber plug, wherein the rubber plug is provided with two quartz gas guide tubes inserted into the quartz tube, one quartz gas guide tube is used for pouring inert gas into the quartz tube, and the other quartz gas guide tube is used for discharging the gas in the quartz tube outwards;
pouring inert gas into the quartz tube, and discharging air in the quartz tube;
heating a vulcanizing furnace to a preset annealing temperature, and then putting a quartz tube into the vulcanizing furnace;
after keeping the temperature for 10 minutes, taking the quartz tube out of the vulcanizing furnace, and cooling;
and stopping introducing the inert gas into the quartz tube after the quartz tube is cooled, and taking out the doped zinc sulfide film.
Further preferably, the annealing temperature is 450 ℃.
The inventor also provides another technical scheme that: the indium-aluminum co-doped zinc sulfide thin film is prepared by the preparation method of the indium-aluminum co-doped zinc sulfide thin film.
Different from the prior art, the technical scheme is that a glass substrate is cleaned, then a ZnS material is evaporated through an electron beam, an In elementary substance and an Al elementary substance are evaporated In vacuum, and then an indium-aluminum-doped zinc sulfide film is prepared through rapid thermal annealing treatment.
Drawings
FIG. 1 is a schematic flow chart of a method for preparing an indium-aluminum co-doped zinc sulfide thin film according to an embodiment;
FIG. 2 is a schematic representation of an XRD pattern of an indium aluminum co-doped zinc sulfide thin film according to an embodiment;
FIG. 3 is a schematic diagram of a transmittance spectrum of an indium aluminum co-doped zinc sulfide thin film according to an embodiment;
FIG. 4 is a schematic diagram of a resistivity map of an indium aluminum co-doped zinc sulfide thin film annealed at different temperatures according to an embodiment.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1, the present embodiment provides a method for preparing an indium-aluminum co-doped zinc sulfide thin film, including the following steps:
S110: cleaning the glass substrate by ultrasonic repeated oscillation, and then drying the glass substrate; wherein, the glass substrate adopts float glass substrate, shakes the glass substrate through KQ2200E type ultrasonic cleaning sound wave repetition, specifically, includes the following steps: to glass substrates respectivelyUltrasonic cleaning with deionized water for 15 minutes, ultrasonic cleaning with acetone for 15 minutes, ultrasonic cleaning with ethanol for 15 minutes, and ultrasonic cleaning with deionized water for 15 minutes, and then drying in an oven for 30 minutes. And the influence of impurities on the preparation of the film on the glass substrate is avoided.
First evaporation of intrinsic ZnS materialS120: evaporating ZnS material on a glass substrate by electron beams in a vacuum environment to form a first layer of film; evaporating by using WTX500/600-ISD-3 type box type vacuum film plating machine, firstly, evaporating at vacuum degree of 5 multiplied by 10-4The first thin film was formed on the glass substrate by electron beam evaporation of ZnS material at a voltage of 75V and a temperature of 150 c for 1 hour. Wherein the deposition rate for ZnS material is set to be such that the surface of the film deposited is not uniform enough and the stress is not good enough due to too high evaporation rate and the adhesion of the film is not good enough due to too low evaporation rate
The thickness of the evaporation is 100nm, and the evaporation speed of ZnS material is adopted
The problems of insufficient uniformity of the surface of the film deposition, insufficient stress, insufficient adhesion and the like caused by too high or too low evaporation rate can be avoided.
Indium aluminum doping S130: after a first layer of film is formed, firstly, evaporating an elemental In on the first layer of film In vacuum, and evaporating a ZnS material through an electron beam again after the elemental In is evaporated to form a second layer of film; evaporating an Al simple substance on the second layer of film in vacuum; after the first layer of film is evaporated, indium and aluminum doping is carried out, firstly, an In simple substance is evaporated on the first layer of film In vacuum, wherein the evaporation thickness of the In simple substance is 2.5nm, and the evaporation speed is
After the In simple substance is evaporated, a layer of ZnS material is evaporated to form a second layerThe second thin film has a thickness of 40nm and a deposition rate of Zns materialThen carrying out Al simple substance evaporation, and carrying out vacuum evaporation on the second layer of film to obtain the Al simple substance, wherein the evaporation thickness of the Al simple substance is 3.7nm, and the evaporation rate is
Wherein, respectively adopt
In simple substance is evaporated at a rate of (1) and
evaporating the Al simple substance at the speed of the second film, wherein the thickness of the second film is 40nm, the evaporation thickness of the In simple substance is 2.5nm, and the evaporation thickness of the Al simple substance is 3.7 nm; the method can realize that the In simple substance and the Al simple substance can be uniformly doped into the ZnS material In the process of evaporating the In simple substance and the Al simple substance. In the process of evaporating the In simple substance and the Al simple substance, the In simple substance and the Al simple substance are respectively doped into the Zns film.
Evaporating the intrinsic ZnS material for the third time S140: evaporating an Al simple substance, evaporating a ZnS material by electron beams again to form a third layer of film, and obtaining a doped zinc sulfide film; after the Al simple substance is evaporated, evaporating ZnS material again, wherein the thickness of the third layer film is 100nm, and the evaporation speed of Zns material is
So that the In simple substance and the Al simple substance can be uniformly permeated to carry out ZnS material evaporation to form a film.
And (4) rapid annealing S150: the resulting doped zinc sulfide film was annealed in argon.
The indium-aluminum-doped zinc sulfide thin film prepared by vacuum electron beam evaporation has the advantages of easily controllable components, low cost and excellent product performance, is suitable for engineering application, particularly has the performances of high transmittance, low resistance state, no impurity phase and the like, and is very suitable for a window layer of a novel thin film solar cell and an N-type conducting layer of a novel semiconductor device, a novel display device and a photoelectric device.
In this embodiment, in order to further improve the performance of the prepared zinc sulfide thin film, the indium-aluminum doping step is performed multiple times, and the method further includes the following steps:
evaporating a ZnS material through an electron beam after evaporating an Al simple substance in the previous indium-aluminum doping step;
and after the ZnS material is evaporated, performing the next In elementary substance evaporation of indium-aluminum doping.
Through multiple indium and aluminum doping steps, the In simple substance and the Al simple substance are doped for multiple times to carry out the ZnS film, and the performance of the ZnS film is further improved. In order to avoid the situation that the performance of the prepared indium-aluminum-doped zinc sulfide film is guaranteed while the thickness of the prepared indium-aluminum-doped zinc sulfide film is too thick, the indium-aluminum doping steps are performed twice, and the two indium-aluminum-doping steps ensure the excellent characteristics of the prepared indium-aluminum-doped zinc sulfide film, such as high transmittance, low resistance and the like, and meanwhile, the thickness of the indium-aluminum-doped zinc sulfide film is not too thick.
In this embodiment, In order to make the prepared indium-aluminum doped zinc sulfide thin film have an optimal thickness ratio, the doping amount of the In simple substance is 0.5 at.% to 1.5 at.% of the ZnS material. The indium-aluminum-doped zinc sulfide thin film prepared by setting the doping amount of the In simple substance to be 0.5 at.% to 1.5 at.% of the ZnS material can be compatible with the optimal transmittance and resistivity, so that the indium-aluminum-doped zinc sulfide thin film prepared by the method has the optimal thickness ratio.
In this embodiment, the stress of the indium-aluminum-doped zinc sulfide thin film is further improved, and the confidentiality of the indium-aluminum-doped zinc sulfide thin film is improved, and the doping amount of the simple substance Al is 4.5 at.% to 5.5 at.% of the material ZnS. According to the property of atoms of the Al simple substance and the bonding effect of the Al simple substance, the doping amount of the Al simple substance is 4.5 at.% to 5.5 at.% of the ZnS material, so that the stress of the indium-aluminum-doped zinc sulfide thin film can be improved.
In this embodiment, the rapid annealing specifically includes the following steps:
placing the doped zinc sulfide film which is naturally cooled for 1 hour into a quartz tube sealed by a rubber plug, wherein the rubber plug is provided with two quartz gas guide tubes inserted into the quartz tube, one quartz gas guide tube is used for pouring inert gas into the quartz tube, and the other quartz gas guide tube is used for discharging the gas in the quartz tube outwards;
pouring inert gas into the quartz tube, and discharging air in the quartz tube;
heating a vulcanizing furnace to a preset annealing temperature, and then putting a quartz tube into the vulcanizing furnace;
after keeping the temperature for 10 minutes, taking the quartz tube out of the vulcanizing furnace, and cooling;
and stopping introducing the inert gas into the quartz tube after the quartz tube is cooled, and taking out the doped zinc sulfide film.
After the third film evaporation is finished, naturally cooling the prepared indium-aluminum-doped zinc sulfide film in a cavity of a vacuum coating machine for 1 hour, taking out the film, then placing the indium-aluminum-doped zinc sulfide film into a quartz tube sealed by a rubber plug, wherein the rubber plug is provided with two quartz gas guide tubes, one quartz gas guide tube is inserted into the bottom of the quartz tube and serves as a gas inlet tube for pouring inert gas into the quartz tube, the inert gas in the embodiment is argon, and other inert gases can be adopted in other embodiments; the other quartz gas guide tube is arranged at the tube opening part of the quartz tube and is used as a gas discharge tube for discharging gas in the quartz tube; after the prepared zinc sulfide film is placed into a quartz tube and sealed, a gas inlet tube is connected to an argon bottle through a flowmeter, argon gas is introduced into the quartz tube for 30 minutes, the flow of the argon gas is 30sccm, air in the quartz tube is expelled, and meanwhile, the tubular vulcanizing furnace is operated, so that the temperature of the vulcanizing furnace is raised to the preset annealing temperature required by annealing. And after the quartz tube is cooled, turning off argon, and taking out the annealed indium-aluminum-doped zinc sulfide film.
As shown in fig. 2, the prepared indium-aluminum-doped zinc sulfide thin film has three diffraction peaks (111), (220) and (311), wherein the peak value of the diffraction peak (111) is strongest, so that the diffraction peaks (220) and (311) are relatively gentler than the diffraction peak (111); as shown in fig. 3, the average transmittance of the prepared indium-aluminum-doped zinc sulfide thin film in a visible light region is more than 80%, as shown in fig. 4, the resistivity of the prepared indium-aluminum-doped zinc sulfide thin film is as low as 0.0139 Ω & cm under the annealing condition of 450 ℃, and the indium-aluminum-doped zinc sulfide thin film prepared by the method has excellent performances of high transmittance, low resistance state, no impurity phase and the like, and is very suitable for a window layer of a novel thin-film solar cell and an N-type conducting layer of a novel semiconductor device, a novel display device and a photoelectric device.
In another embodiment, an indium-aluminum-doped zinc sulfide thin film is prepared by the indium-aluminum-doped zinc sulfide thin film preparation method described in the above embodiment, and the indium-aluminum-doped zinc sulfide thin film prepared by vacuum electron beam evaporation has easily controllable components, low cost, excellent product performance, suitability for engineering applications, especially high transmittance, low resistance and no impurity phase, and is very suitable for a window layer of a novel thin film solar cell and an N-type conducting layer of a novel semiconductor device, a novel display device and a photoelectric device.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (10)
1. The preparation method of the indium-aluminum co-doped zinc sulfide film is characterized by comprising the following steps of:
cleaning a substrate: cleaning the glass substrate by ultrasonic repeated oscillation, and then drying the glass substrate;
first evaporation of intrinsic ZnS material: evaporating ZnS material on a glass substrate by electron beams in a vacuum environment to form a first layer of film;
doping indium and aluminum: after a first layer of film is formed, firstly, evaporating an elemental In on the first layer of film In vacuum, and evaporating a ZnS material through an electron beam again after the elemental In is evaporated to form a second layer of film; evaporating an Al simple substance on the second layer of film in vacuum;
evaporating intrinsic ZnS material for the third time: evaporating an Al simple substance, evaporating a ZnS material by electron beams again to form a third layer of film, and obtaining a doped zinc sulfide film;
and (3) rapid annealing: the resulting doped zinc sulfide film was annealed in argon.
2. The method for preparing the indium-aluminum co-doped zinc sulfide thin film according to claim 1, wherein the substrate cleaning specifically comprises the following steps:
the glass substrate is subjected to ultrasonic cleaning for 15 minutes by deionized water, ultrasonic cleaning for 15 minutes by acetone, ultrasonic cleaning for 15 minutes by ethanol and ultrasonic cleaning for 15 minutes by deionized water, and then is dried in an oven for 30 minutes.
3. The method for preparing the indium-aluminum co-doped zinc sulfide thin film according to claim 1, wherein the thickness of the first layer thin film and the thickness of the third layer thin film are both 100nm, the thickness of the second layer thin film is 40nm, the evaporation thickness of the In simple substance is 2.5nm, and the evaporation thickness of the Al simple substance is 3.7 nm.
4. The method for preparing the indium-aluminum co-doped zinc sulfide thin film as claimed in claim 1, wherein the evaporation rate of the electron beam evaporation Zns material is
The evaporation rate of the In simple substance is
The evaporation rate of the Al simple substance is
5. The method for preparing the indium-aluminum co-doped zinc sulfide thin film according to claim 1, wherein the indium-aluminum doping step is performed for a plurality of times, and further comprising the following steps:
evaporating a ZnS material through an electron beam after evaporating an Al simple substance in the previous indium-aluminum doping step;
and after the ZnS material is evaporated, performing the next In elementary substance evaporation of indium-aluminum doping.
6. The method for preparing an indium-aluminum co-doped zinc sulfide thin film according to claim 1, wherein the doping amount of the In simple substance is 0.5 at.% to 1.5 at.% of the ZnS material.
7. The method for preparing the indium-aluminum co-doped zinc sulfide thin film according to claim 1, wherein the doping amount of the Al is 4.5 at.% to 5.5 at.% of the ZnS material.
8. The method for preparing the indium-aluminum co-doped zinc sulfide thin film according to claim 1, wherein the rapid annealing specifically comprises the following steps:
placing the doped zinc sulfide film which is naturally cooled for 1 hour into a quartz tube sealed by a rubber plug, wherein the rubber plug is provided with two quartz gas guide tubes inserted into the quartz tube, one quartz gas guide tube is used for pouring inert gas into the quartz tube, and the other quartz gas guide tube is used for discharging the gas in the quartz tube outwards;
pouring inert gas into the quartz tube, and discharging air in the quartz tube;
heating a vulcanizing furnace to a preset annealing temperature, and then putting a quartz tube into the vulcanizing furnace;
after keeping the temperature for 10 minutes, taking the quartz tube out of the vulcanizing furnace, and cooling;
and stopping introducing the inert gas into the quartz tube after the quartz tube is cooled, and taking out the doped zinc sulfide film.
9. The method for preparing the indium-aluminum co-doped zinc sulfide thin film according to claim 8, wherein the annealing temperature is 450 ℃.
10. An indium-aluminum co-doped zinc sulfide thin film, which is prepared by the preparation method of the indium-aluminum co-doped zinc sulfide thin film according to any one of claims 1 to 9.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531660A (en) * | 2013-10-17 | 2014-01-22 | 福州大学 | In-doped zinc sulfide thin film and preparation method and application thereof |
| US20140261668A1 (en) * | 2013-03-15 | 2014-09-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of cigs thin films on flexible glass substrates |
| CN104885205A (en) * | 2012-06-20 | 2015-09-02 | 法国圣戈班玻璃厂 | Layer system for thin-film solar cells |
| CN105206690A (en) * | 2014-06-10 | 2015-12-30 | Sk新技术株式会社 | Solar cell including multiple buffer layer formed by atomic layer deposition and method of fabricating the same |
| CN105428217A (en) * | 2015-11-23 | 2016-03-23 | 福州大学 | Cu-doped indium sulfide film preparation method |
| CN105789353A (en) * | 2014-10-03 | 2016-07-20 | 台积太阳能股份有限公司 | Solar cell having doped buffer layer and method of fabricating the solar cell |
| CN107393979A (en) * | 2017-06-09 | 2017-11-24 | 中国科学院宁波材料技术与工程研究所 | A kind of transparency electrode based on ultrathin metallic film and its preparation method and application |
| US10199634B2 (en) * | 2013-06-20 | 2019-02-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for preparing an amorphous film made from lithiated metal sulfide or oxysulfide |
-
2019
- 2019-12-02 CN CN201911214221.8A patent/CN110747436A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104885205A (en) * | 2012-06-20 | 2015-09-02 | 法国圣戈班玻璃厂 | Layer system for thin-film solar cells |
| US20140261668A1 (en) * | 2013-03-15 | 2014-09-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of cigs thin films on flexible glass substrates |
| US10199634B2 (en) * | 2013-06-20 | 2019-02-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for preparing an amorphous film made from lithiated metal sulfide or oxysulfide |
| CN103531660A (en) * | 2013-10-17 | 2014-01-22 | 福州大学 | In-doped zinc sulfide thin film and preparation method and application thereof |
| CN105206690A (en) * | 2014-06-10 | 2015-12-30 | Sk新技术株式会社 | Solar cell including multiple buffer layer formed by atomic layer deposition and method of fabricating the same |
| CN105789353A (en) * | 2014-10-03 | 2016-07-20 | 台积太阳能股份有限公司 | Solar cell having doped buffer layer and method of fabricating the solar cell |
| CN105428217A (en) * | 2015-11-23 | 2016-03-23 | 福州大学 | Cu-doped indium sulfide film preparation method |
| CN107393979A (en) * | 2017-06-09 | 2017-11-24 | 中国科学院宁波材料技术与工程研究所 | A kind of transparency electrode based on ultrathin metallic film and its preparation method and application |
Non-Patent Citations (3)
| Title |
|---|
| B. SOTILLO等: "Growth by thermal evaporation of Al doped ZnS elongated micro- and nanostructures and their cathodoluminescence properties", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
| H. DARING等: "Photoelectrochemical Investigations on A1 and In Co-doped ZnS Thin Film Electrodes", 《BER. BUNSENYES. PHYS. CHEM.》 * |
| 李文剑: "真空蒸发掺杂ZnS薄膜的制备及其光电性能研究", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
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