CN110739882B - Jet flow power generation device and method based on semiconductor temperature difference power generation - Google Patents
Jet flow power generation device and method based on semiconductor temperature difference power generation Download PDFInfo
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- CN110739882B CN110739882B CN201910923030.2A CN201910923030A CN110739882B CN 110739882 B CN110739882 B CN 110739882B CN 201910923030 A CN201910923030 A CN 201910923030A CN 110739882 B CN110739882 B CN 110739882B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
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Abstract
The invention relates to a jet flow generating device and method based on semiconductor temperature difference power generation, wherein the device comprises: the circulating channel comprises a water tank, a water inlet pipe, a water outlet pipe and a water guide pipe, wherein a filter is arranged on the water inlet pipe, one end of the water inlet pipe is connected into the water tank, the other end of the water inlet pipe is connected with the water guide pipe, one end of the water outlet pipe is connected into the water tank, and a column flow nozzle is arranged on the side surface of the other end of the water outlet pipe; the steam boiler is connected with the air outlet pipe and is provided with a column flow nozzle on the side surface of the air outlet pipe; the hydraulic unit comprises a motor and a water pump connected with the water tank; the thermoelectric generation module comprises a semiconductor thermoelectric generation piece, and the semiconductor thermoelectric generation piece is fixed between the water outlet pipe and the air outlet pipe through a metal rod. The method has the following beneficial effects: there is great difference in temperature all the time between the cold and hot terminal surface of semiconductor thermoelectric generation piece, when stable electricity generation, the pressure of giving the cold and hot terminal surface of semiconductor thermoelectric generation piece has further improved the generating capacity to the both ends efflux.
Description
Technical Field
The invention relates to a power generation device, in particular to a jet power generation device and a jet power generation method.
Technical Field
With the increasing severity of energy and environmental pollution, thermoelectric materials attract extensive attention because of their advantages of no pollution, no noise, small volume, long service life, and being capable of being accurately controlled. Thermoelectric materials have irreplaceable advantages in terms of power generation, environmental protection, no vibration, no noise, miniaturization, easy control, reliability, long life, and the like.
Thermoelectric devices operate based on the internal effects of thermoelectric materials, allowing for energy conversion. The Seebeck effect of the thermoelectric material, also called thermoelectric generation effect, means that in a loop formed by two different conductors, if the temperatures of two end faces of the conductors are different, electromotive force is generated in the loop, and when a load resistor is added, direct current is generated.
Thermoelectric power generation is a novel power generation mode, and heat energy is directly converted into electric energy by utilizing the Seebeck effect. The semiconductor temperature difference generator manufactured by the semiconductor temperature difference generating module can generate electricity as long as the temperature difference exists.
As known from the literature, the thermoelectric performance of the material is determined by nondimensional thermoelectric figure of merit ZT, ZT = S 2 Sigma T/K, wherein S is a Seebeck coefficient; σ is the electrical conductivity, T is the temperature difference, and κ is the thermal conductivity. The larger the thermoelectric figure of merit, the higher the thermoelectric conversion efficiency. The Seebeck coefficient S of the semiconductor material is increased by applying pressure on the semiconductor material, so that the thermoelectric figure of merit is increased, and the power generation capacity is improved. The invention is different from the principle that the power generation capacity is improved by applying pressure to a semiconductor material to reduce the contact thermal resistance in the literature; and is different from the method of pressing the semiconductor material by using a diamond anvil in the literature.
Disclosure of Invention
The invention aims to provide a jet flow generating device and method based on semiconductor thermoelectric generation.
In order to achieve the purpose, the invention adopts the following technical scheme:
a jet flow power generation device based on semiconductor temperature difference power generation comprises a circulation channel, a steam boiler and a hydraulic unit, wherein the circulation channel comprises a water tank, a water inlet pipe, a water outlet pipe and a water guide pipe, one end of the water inlet pipe is connected into the water tank, the other end of the water inlet pipe is connected with the water guide pipe, one end of the water outlet pipe is connected into the water tank, and a column flow nozzle is arranged on the side surface of the other end of the water outlet pipe; the steam boiler is connected with the air outlet pipe, the hydraulic unit comprises a motor and a water pump connected with the water tank, and the thermoelectric generation module comprises semiconductor thermoelectric generation pieces; the semiconductor thermoelectric generation piece is fixed between the water outlet pipe and the air outlet pipe through a metal rod and is positioned above the water guide pipe, and the semiconductor thermoelectric generation piece is connected with the storage battery.
Further, the semiconductor thermoelectric generation piece comprises a P-type semiconductor, an N-type semiconductor and a copper piece, wherein the P-type semiconductor and the N-type semiconductor are both arranged between the cold end face and the hot end face of the semiconductor thermoelectric generation piece.
Furthermore, a filter is arranged on the water inlet pipe.
A jet flow power generation method based on semiconductor temperature difference power generation comprises the following steps:
1) Cold water is injected into the water tank, the motor drives the water pump to convey the cold water in the water tank into the water outlet pipe, and the cold water in the water outlet pipe flows out of the columnar flow nozzle to form low-temperature water jet;
2) Steam in the steam boiler flows through the gas outlet pipe and flows out of the column flow nozzle to form high-temperature steam jet;
3) The semiconductor thermoelectric generation piece is installed in the middle of two water flows, and high temperature steam jet strikes the hot terminal surface of semiconductor thermoelectric generation piece makes the hot terminal surface of semiconductor thermoelectric generation piece heaies up, and low temperature water jet strikes simultaneously the cold terminal surface of semiconductor thermoelectric generation piece makes the cold terminal surface cooling of semiconductor thermoelectric generation piece, consequently there is great difference in temperature between the cold and hot terminal surface of semiconductor thermoelectric generation piece all the time, guarantees the semiconductor thermoelectric generation piece can generate electricity steadily.
4) The water guide pipe is arranged under the semiconductor thermoelectric generation sheet, and the flowing water flows back into the water tank through the filter for cyclic utilization, so that the utilization rate of the water flow is improved.
The technical scheme of the invention has the following beneficial effects:
the invention provides a jet flow power generation device and a power generation method based on semiconductor temperature difference power generation.A cold water flows in a water outlet pipe and forms a low-temperature water jet flow through a nozzle, a high-temperature steam flows in a gas outlet pipe and forms a high-temperature steam jet flow through the nozzle, the low-temperature water jet flow impacts a cold end surface of a semiconductor temperature difference power generation sheet, the high-temperature steam jet flow impacts a hot end surface of the semiconductor temperature difference power generation sheet, the temperature difference is generated at two ends of the semiconductor temperature difference power generation sheet, meanwhile, the pressure applied to the semiconductor temperature difference power generation sheet by the jet flows at the two ends further improves the power generation capacity, and a plurality of semiconductor temperature difference power generation sheets can be installed in a power generation module to generate power simultaneously, so that the power generation capacity is improved.
Drawings
FIG. 1 is a schematic diagram of a jet power generation device based on semiconductor thermoelectric power generation;
FIG. 2 is a schematic structural view of a portion of the semiconductor thermoelectric generation chip of FIG. 1;
in the figure: 1-water tank, 2-water inlet pipe, 3-filter, 4-water outlet pipe, 5-water pump, 6-motor, 7-column flow nozzle, 8-semiconductor thermoelectric power generation sheet, 9-water guide pipe, 10-storage battery, 11-steam boiler, 12-air outlet pipe, 13-metal rod, 14-copper sheet and 15-ceramic heat conducting sheet.
Detailed Description
In order to more clearly illustrate the present invention, embodiments of the present invention will be further described below with reference to the accompanying drawings.
Referring to fig. 1 and 2, a jet power generation device based on semiconductor thermoelectric power generation includes: a circulating channel, a steam boiler 11, a hydraulic unit and a thermoelectric generation module.
Circulation channel includes water tank 1, inlet tube 2, outlet pipe 4 and aqueduct 9, be equipped with filter 3 on the inlet tube 2, 2 one end of inlet tube inserts water tank 1, the other end is connected aqueduct 9, 4 one ends of outlet pipe insert water tank 1, the other end is located the top of aqueduct 9 is in the side spliced pole of outlet pipe 4 flows nozzle 7. The side surface of the outlet pipe 12 is connected with a column flow nozzle 7, and the steam in the steam boiler 11 flows out of the column flow nozzle 7 to form high-temperature steam jet.
The hydraulic unit comprises a motor 6 and a water pump 5 connected with the water tank 1. The water pump 5 is driven by the motor 6 to work.
The thermoelectric generation module comprises a water outlet pipe 4, an air outlet pipe 12 and a semiconductor thermoelectric generation piece 8, wherein the water outlet pipe 4 is connected with the water tank 1, the air outlet pipe 12 is connected with a steam boiler 11, and the semiconductor thermoelectric generation piece 8 is fixed between the water outlet pipe 4 and the air outlet pipe 12 through a metal rod 13. The semiconductor thermoelectric generation piece 8 is connected with a storage battery 10 to store the generated electric energy.
As shown in fig. 2, the semiconductor thermoelectric generation chip 8 includes a P-type semiconductor, an N-type semiconductor, and a copper sheet 14, and both the P-type semiconductor and the N-type semiconductor are disposed between the cold end surface B and the hot end surface a of the semiconductor thermoelectric generation chip 8.
The working principle of the jet flow power generation method based on semiconductor temperature difference power generation is as follows: cold water is injected into the water tank 1, the motor 6 drives the water pump 5 to convey the cold water in the water tank 1 to the water outlet pipe 4, and the cold water in the water outlet pipe 4 flows out from the columnar flow nozzle 7 to form low-temperature water jet;
the steam in the steam boiler 11 flows through the outlet pipe 12 and flows out of the column flow nozzle 7 to form high-temperature steam jet.
Semiconductor thermoelectric generation piece 8 is installed in the middle of two water flows, and high temperature steam efflux strikes semiconductor thermoelectric generation piece 8's hot terminal surface, makes semiconductor thermoelectric generation piece 8's hot terminal surface heat up, and low temperature water jet strikes semiconductor thermoelectric generation piece 8's cold terminal surface simultaneously, makes semiconductor thermoelectric generation piece 8's cold terminal surface cooling, therefore has great difference in temperature between semiconductor thermoelectric generation piece 8's the cold and hot terminal surface all the time, guarantees that semiconductor thermoelectric generation piece 8 can stable electricity generation.
When 8 both ends of semiconductor thermoelectric generation piece kept there is great difference in temperature, very big pressure can be applyed for 8 both ends of semiconductor thermoelectric generation piece to two strands of efflux, and this pressure can make the resistance of semiconductor thermoelectric generation piece 8 itself reduce, and Seebeck coefficient S increases to increase semiconductor thermoelectric generation piece 8' S thermoelectric figure of merit, further improve the generating capacity.
A water guide pipe 9 is arranged under the semiconductor thermoelectric generation sheet 8, and the water flowing down flows back to the water tank 1 through the filter 3, so that the water is recycled, and the utilization rate of water flow is improved.
Claims (4)
1. A jet flow power generation device based on semiconductor temperature difference power generation comprises a circulation channel, a steam boiler and a hydraulic unit, and is characterized in that the circulation channel comprises a water tank, a water inlet pipe, a water outlet pipe and a water guide pipe, wherein one end of the water inlet pipe is connected into the water tank, the other end of the water inlet pipe is connected with the water guide pipe, one end of the water outlet pipe is connected into the water tank, and a column flow nozzle is arranged on the side surface of the other end of the water outlet pipe; the steam boiler is connected with the air outlet pipe, the hydraulic unit comprises a motor and a water pump connected with the water tank, and the thermoelectric generation module comprises semiconductor thermoelectric generation pieces; the semiconductor thermoelectric generation piece is fixed between the water outlet pipe and the air outlet pipe through a metal rod and is positioned above the water guide pipe, and the semiconductor thermoelectric generation piece is connected with the storage battery; the side of outlet duct connects the post flow nozzle, cold water in the outlet duct flows out from the post flow nozzle on the outlet duct and forms the low temperature water jet, steam in the steam boiler flows through the outlet duct and flows out from the post flow nozzle on the outlet duct and forms the high temperature steam efflux, semiconductor thermoelectric generation piece is installed in the middle of two efflux, the hot terminal surface of semiconductor thermoelectric generation piece is strikeed in high temperature steam efflux, make the hot terminal surface of semiconductor thermoelectric generation piece heat up, the cold terminal surface of semiconductor thermoelectric generation piece is strikeed in low temperature water jet simultaneously, make the cold terminal surface cooling of semiconductor thermoelectric generation piece.
2. The jet flow power generation device based on semiconductor temperature difference power generation as claimed in claim 1, characterized in that: the semiconductor thermoelectric power generation piece comprises a P-type semiconductor, an N-type semiconductor and a copper piece, wherein the P-type semiconductor and the N-type semiconductor are arranged between the cold end face and the hot end face of the semiconductor thermoelectric power generation piece.
3. The jet flow power generation device based on semiconductor temperature difference power generation as claimed in claim 1, characterized in that: the water inlet pipe is provided with a filter.
4. A jet flow power generation method based on semiconductor temperature difference power generation, which adopts the jet flow power generation device based on semiconductor temperature difference power generation of any one of claims 1 to 3, and is characterized by comprising the following steps:
1) Cold water is injected into the water tank, the motor drives the water pump to convey the cold water in the water tank into the water outlet pipe, and the cold water in the water outlet pipe flows out from a columnar flow nozzle on the water outlet pipe to form low-temperature water jet;
2) Steam in the steam boiler flows through the air outlet pipe and flows out from the columnar flow nozzle on the air outlet pipe to form high-temperature steam jet;
3) The semiconductor thermoelectric power generation piece is arranged between the two jet flows, the high-temperature steam jet flow impacts the hot end face of the semiconductor thermoelectric power generation piece to heat the hot end face of the semiconductor thermoelectric power generation piece, and the low-temperature water jet flow impacts the cold end face of the semiconductor thermoelectric power generation piece to cool the cold end face of the semiconductor thermoelectric power generation piece, so that large temperature difference exists between the cold end face and the hot end face of the semiconductor thermoelectric power generation piece all the time, and the semiconductor thermoelectric power generation piece can generate power stably;
4) The water guide pipe is arranged under the semiconductor thermoelectric generation sheet, and the flowing water flows back into the water tank through the filter for cyclic utilization, so that the utilization rate of the water flow is improved.
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KR101495566B1 (en) * | 2014-05-07 | 2015-02-25 | 허상채 | Independent electric power method and device using steam and liquid pressure |
JP6851945B2 (en) * | 2017-09-19 | 2021-03-31 | 株式会社東芝 | Thermoelectric generation system |
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CN106402863A (en) * | 2016-11-30 | 2017-02-15 | 叶碧波 | Method for dissipating heat through fuel gas ejection |
CN106787952A (en) * | 2016-12-30 | 2017-05-31 | 中国科学院深海科学与工程研究所 | A kind of submarine hydrothermal solution temperature difference electricity generation device |
CN108832847A (en) * | 2018-07-16 | 2018-11-16 | 肇庆高新区国专科技有限公司 | A kind of thermo-electric generation system |
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