CN101572517A - Generating device - Google Patents
Generating device Download PDFInfo
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- CN101572517A CN101572517A CNA2009100856266A CN200910085626A CN101572517A CN 101572517 A CN101572517 A CN 101572517A CN A2009100856266 A CNA2009100856266 A CN A2009100856266A CN 200910085626 A CN200910085626 A CN 200910085626A CN 101572517 A CN101572517 A CN 101572517A
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Abstract
The invention relates to a generating device, comprising a collector used for collecting heat energy, a heat interchanger used for heat exchange and a generating chip equipped with a hot end and a cold end, wherein the interior of the heat interchanger is provided with a liquid flowing channel, the hot end is jointed with the collector, the cold end is jointed with the heat interchanger, and temperature difference between the hot end and the cold end is utilized to generate electrical energy. The generating chip comprises a cold end ceramic substrate jointed with the heat interchanger, a first stream guide strip jointed on the cold end ceramic substrate, a semiconductor material particle of which one end is jointed with the first stream guide strip and a second stream guide strip of which one surface is jointed with the other end of the semiconductor material particle while the other surface is jointed with the collector. The heat absorbed by the hot end of the generating chip of the generating device can be waste heat energy, the cold end of the generating chip is connected with the heat interchanger cooled by liquid, the temperature difference between the cold end and the hot end is used for generating electrical energy. The invention enjoys not only convenient and economy but also large cold/hot temperature difference; the invention also has high generating efficiency and output power, and long service life.
Description
Technical field
The present invention relates to a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT), especially a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of utilizing semiconductor temperature differential generating.
Background technology
The semiconductor temperature differential generating technology is to utilize the temperature difference that forms at semiconductor power-generating chip two ends, and the Sai Beike of semiconductor chip electricity generation material (seebeck) effect, thereby produces electric energy.
The semiconductor power-generating chip has cold junction and hot junction, and the temperature difference at cold and hot two ends is big more, and the electric energy that the semiconductor power-generating chip produces is just many more.
But the generating efficiency of conventional semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) is low, and power output is little, and thermal stress release is insufficient, causes useful life short.
Summary of the invention
The objective of the invention is defective, a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) is provided at existing Blast Furnace Top Gas Recovery Turbine Unit (TRT), the generating efficiency height, power output is big, and long service life.
For achieving the above object, the invention provides a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT), comprising:
Heat collector is used to collect heat energy;
Heat exchanger, inside have flow of liquid through passage, are used for heat exchange;
Power-generating chip has hot junction and cold junction, and described hot junction engages described heat collector, and described cold junction engages described heat exchanger, utilizes the temperature difference between cold junction and the hot junction to produce electric energy.
Also comprise: heat transfer device, be connected with described heat collector, be used for the heat of thermal source is conducted to described heat collector.Described heat transfer device is the heat pipe that includes gas/liquid or solid-liquid two-phase working substance; The material of described heat transfer device is a metal.Described power-generating chip comprises: the cold junction ceramic substrate engages with described heat exchanger; First flow guide bar is bonded on the described cold junction ceramic substrate; The semi-conducting material particle, an end and described first flow guide bar connect; Second flow guide bar, the one side of the other end of described semi-conducting material particle and described second flow guide bar connects, and the another side of described second flow guide bar engages described heat collector.One end of described semi-conducting material particle connects by weld layer and described first flow guide bar and establishes, and the other end of described semi-conducting material particle connects by weld layer and described second flow guide bar and establishes.Described power-generating chip also comprises: the hot junction ceramic substrate, described second flow guide bar is bonded on the ceramic substrate of described hot junction, and the another side of described second flow guide bar engages described heat collector by described hot junction ceramic substrate.The area of described hot junction ceramic substrate is less than the area of described cold junction ceramic substrate.Described hot junction ceramic substrate is a several piece.Also comprise: hot resilient coating, described heat collector engages the hot junction of described power-generating chip by hot resilient coating, is used to reduce the temperature fluctuation in described power-generating chip hot junction.Described hot resilient coating is Graphite pad or thermal conductive silicon film.
The hot junction of the power-generating chip of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention absorbs the heat of heat collector, can be to utilize used heat heat energy, for example the waste heat that produces in the fuel combustion process; The cold junction of temperature difference power-generating chip and the heat exchanger of liquid cools join, and the temperature difference that forms with the chip hot junction produces electric energy, and be not only convenient but also economical and to form the hot and cold temperature difference big, and generating efficiency height, power output are big, long service life.
Description of drawings
Fig. 1 is the structural representation of Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 1 of the present invention;
Fig. 2 is the structural representation of Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 1 heat exchanger of the present invention
Fig. 3 is the structural representation of Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 2 of the present invention;
Fig. 4 is the structural representation of Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 3 of the present invention;
Fig. 5 is the structural representation of the power-generating chip embodiment 1 of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention;
Fig. 6 is the structural representation of the power-generating chip embodiment 2 of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention;
Fig. 7 is the structural representation of the power-generating chip embodiment 3 of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
As shown in Figure 1, be the structural representation of Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 1 of the present invention, the Blast Furnace Top Gas Recovery Turbine Unit (TRT) of present embodiment comprises: heat collector 1, heat exchanger 2 and power-generating chip 3, power-generating chip 3, have hot junction 31 and cold junction 32, hot junction 31 engages heat collector 1, and cold junction 32 engages heat exchanger 2.
Because heat exchanger 2 uses the mode of liquid cools, therefore can high efficiencyly take away the heat of power-generating chip 3 cold junctions, reduce the temperature of power-generating chip 3 cold junctions 32, enlarge the hot junction 31 of power-generating chip 3 and the temperature difference between the cold junction 32 efficiently, thereby improve the generating efficiency of power-generating chip 3.
As shown in Figure 3, structural representation for Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 2 of the present invention, the Blast Furnace Top Gas Recovery Turbine Unit (TRT) of present embodiment 2 has increased a heat transfer device 4 than the Blast Furnace Top Gas Recovery Turbine Unit (TRT) among the embodiment 1, be connected with heat collector 1, heat transfer device can be for including the heat pipe of gas/liquid or solid-liquid two-phase working substance, and its material can be metal.Heat transfer device 4 can be connected with thermal source, so just the heat of thermal source can be conducted to heat collector 1 rapidly.Improve the temperature of heat collector 1, through with the heat exchange in the hot junction 31 of power-generating chip 3, improve the temperature in power-generating chip 3 hot junctions 31, thereby increase the temperature difference between euthermic chip 3 hot junctions 31 and the cold junction 32, so also just improve the generating efficiency of power-generating chip 3, and realized the generation mode of stow away from heat.
As shown in Figure 4, structural representation for Blast Furnace Top Gas Recovery Turbine Unit (TRT) embodiment 3 of the present invention, the Blast Furnace Top Gas Recovery Turbine Unit (TRT) of present embodiment 2 has increased a hot resilient coating 5 than the Blast Furnace Top Gas Recovery Turbine Unit (TRT) among the embodiment 1, heat collector 1 engages the hot junction 31 of power-generating chip 3 by hot resilient coating 5, be used to reduce the temperature fluctuation in power-generating chip 3 hot junctions 31.
The purpose of the hot resilient coating 5 that increases between the composition plane of power-generating chip 3 hot junctions 31 and heat collector 1 is, cause damage for power-generating chip 3 in order to prevent excessive temperature fluctuation, engage simultaneously under a plurality of power-generating chip 3 situations between power-generating chip 3 hot junctions 31 and heat collector 1 composition plane for guaranteeing simultaneously, because causing, power-generating chip 3 variable thickness cause every power-generating chip 3 hot junctions 31 inconsistent, influence generating output with heat collector 1 plane engagement degree.
Hot resilient coating 5 can be Graphite pad or thermal conductive silicon film etc.
When between power-generating chip 3 hot junctions 31 and heat collector 1, hot resilient coating 5 not being set, because power-generating chip 3 hot junctions 31 directly engage with heat collector 1, therefore the temperature fluctuation meeting of heat collector 1 is passed to the hot junction 31 of power-generating chip 3 rapidly, so conversion efficiency of thermoelectric meeting height a bit.But when the temperature fluctuation of power-generating chip 3 is excessive; easily cause the damage of power-generating chip 3; so between power-generating chip 3 hot junctions 31 and heat collector 1, hot resilient coating 5 is set; reduce the temperature fluctuation in power-generating chip 3 hot junctions 31; carrying out thermal stress simultaneously discharges; protection power-generating chip 3 has prolonged the useful life of power-generating chip 3.
As shown in Figure 5, be the structural representation of the power-generating chip embodiment 1 of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention, the power-generating chip of present embodiment comprises: cold junction ceramic substrate 302, first flow guide bar 312, semi-conducting material particle 300 and second flow guide bar 311.Cold junction ceramic substrate 302 engages with heat exchanger, and the one side of first flow guide bar 312 is bonded on the cold junction ceramic substrate 302; One end of semi-conducting material particle 300 and first flow guide bar 312 connect, and the other end of semi-conducting material particle 300 and second flow guide bar 311 connect; Second flow guide bar 311 engages heat collector 1.Also be connected with output lead 330 on the cold junction ceramic substrate 302.
First flow guide bar 312 and second flow guide bar 311 couple together semi-conducting material particle 300 by certain series and parallel syndeton.For guaranteeing the maximum output of generated output, height, cross-sectional area, the series-parallel system of the semi-conducting material particle 300 of semiconductor temperature differential generating chip 3 inside, or adopt total internal resistance of the semiconductor power-generating chip 3 that the series parallel structure etc. of a plurality of semiconductor power-generating chip 3 finally causes to need be complementary with the load resistance.
Power-generating chip only be provided with a ceramic substrate (cold junction ceramic substrate) be because, during thermo-electric generation, bear the bigger temperature difference between the hot junction of semiconductor temperature differential generating chip and the cold junction, and the working temperature in hot junction is higher, the thermal stress that power-generating chip is born is bigger, so Open architecture can be adopted in the hot junction.
As shown in Figure 6, structural representation for the power-generating chip embodiment 2 of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention, the power-generating chip of present embodiment is except the structure that comprises power-generating chip embodiment 1, also comprise hot junction ceramic substrate 301, the another side of the second flow guide bar (not shown) is bonded on the hot junction ceramic substrate 301, and described second flow guide bar engages heat collector by hot junction ceramic substrate 301.
And an end of semi-conducting material particle 300 can connect by the weld layer and first flow guide bar 312 and establish, and the other end of semi-conducting material particle 300 connects by the weld layer and second flow guide bar 311 and establishes.
Because power-generating chip 3 cold junctions 32 temperature are low than hot junction 31 during the work generating, so the reliability height, so the lead-in wire 300 of semiconductor power-generating chip 3 generally is welded on the cold junction 32 of power-generating chip 3.The big I difference of the ceramic substrate on semiconductor power-generating chip 3 two sides, the area of general cold junction ceramic substrate 302 are beneficial to welding external lead wire 300 greater than hot junction ceramic substrate 301.
As shown in Figure 7, structural representation for the power-generating chip embodiment 3 of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention, the difference of the power-generating chip of present embodiment and power-generating chip embodiment 2 is, hot junction ceramic substrate 301 is a multi-disc, because during thermo-electric generation, bear the bigger temperature difference between the hot junction of semiconductor temperature differential generating chip and the cold junction, and the working temperature in hot junction is higher, the thermal stress that power-generating chip is born is bigger, so use the multi-disc hot junction ceramic substrate 301 of small size to discharge thermal stress.
The hot junction of the power-generating chip of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention absorbs the heat of heat collector, can be to utilize used heat heat energy, for example the waste heat that produces in the fuel combustion process; The cold junction of power-generating chip and the heat exchanger of liquid cools join, and the temperature difference that forms with the chip hot junction produces electric energy, and be not only convenient but also economical and to form the hot and cold temperature difference big, and generating efficiency height, power output are big, long service life.
Therefore Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention can be used for gas heater, makes full use of the combustion heat and the required temperature difference that forms between the hot water that adds is generated electricity, and efficiently solves the required supply of electric power of gas heater system, realizes the effect of energy-saving and environmental protection.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (10)
1, a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) is characterized in that comprising:
Heat collector is used to collect heat energy;
Heat exchanger, inside have flow of liquid through passage, are used for heat exchange;
Power-generating chip has hot junction and cold junction, and described hot junction engages described heat collector, and described cold junction engages described heat exchanger, utilizes the temperature difference between cold junction and the hot junction to produce electric energy.
2, Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 1 is characterized in that also comprising: heat transfer device, be connected with described heat collector, and be used for the heat of thermal source is conducted to described heat collector.
3, Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 2 is characterized in that described heat transfer device is the heat pipe that includes gas/liquid or solid-liquid two-phase working substance; The material of described heat transfer device is a metal.
4,, it is characterized in that described power-generating chip comprises according to claim 1,2 or 3 described Blast Furnace Top Gas Recovery Turbine Unit (TRT):
The cold junction ceramic substrate engages with described heat exchanger;
First flow guide bar is bonded on the described cold junction ceramic substrate;
The semi-conducting material particle, an end and described first flow guide bar connect;
Second flow guide bar, the one side of the other end of described semi-conducting material particle and described second flow guide bar connects, and the another side of described second flow guide bar engages described heat collector.
5, Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 4, an end that it is characterized in that described semi-conducting material particle connects by weld layer and described first flow guide bar to be established, and the other end of described semi-conducting material particle connects by weld layer and described second flow guide bar and establishes.
6, Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 4, it is characterized in that described power-generating chip also comprises: the hot junction ceramic substrate, described second flow guide bar is bonded on the ceramic substrate of described hot junction, and the another side of described second flow guide bar engages described heat collector by described hot junction ceramic substrate.
7, Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 6 is characterized in that the area of the area of described hot junction ceramic substrate less than described cold junction ceramic substrate.
8,, it is characterized in that described hot junction ceramic substrate is a several piece according to claim 6 or 7 described Blast Furnace Top Gas Recovery Turbine Unit (TRT).
9, according to claim 1,2 or 3 described Blast Furnace Top Gas Recovery Turbine Unit (TRT), it is characterized in that also comprising: hot resilient coating, described heat collector engages the hot junction of described power-generating chip by hot resilient coating, is used to reduce the temperature fluctuation in described power-generating chip hot junction.
10, Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 9 is characterized in that described hot resilient coating is Graphite pad or thermal conductive silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100856266A CN101572517A (en) | 2009-05-26 | 2009-05-26 | Generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100856266A CN101572517A (en) | 2009-05-26 | 2009-05-26 | Generating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101572517A true CN101572517A (en) | 2009-11-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100856266A Pending CN101572517A (en) | 2009-05-26 | 2009-05-26 | Generating device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107612424A (en) * | 2017-09-30 | 2018-01-19 | 广东美的厨房电器制造有限公司 | Electricity generation system and electrical equipment |
| CN113291125A (en) * | 2021-05-12 | 2021-08-24 | 张智高 | Transmission oil pump for hybrid electric vehicle |
-
2009
- 2009-05-26 CN CNA2009100856266A patent/CN101572517A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107612424A (en) * | 2017-09-30 | 2018-01-19 | 广东美的厨房电器制造有限公司 | Electricity generation system and electrical equipment |
| CN107612424B (en) * | 2017-09-30 | 2020-04-21 | 广东美的厨房电器制造有限公司 | Power generation system and electric appliance |
| CN113291125A (en) * | 2021-05-12 | 2021-08-24 | 张智高 | Transmission oil pump for hybrid electric vehicle |
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Open date: 20091104 |