CN110739410A - Packaging structure, manufacturing method thereof and OLED display device comprising packaging structure - Google Patents

Packaging structure, manufacturing method thereof and OLED display device comprising packaging structure Download PDF

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Publication number
CN110739410A
CN110739410A CN201911096903.3A CN201911096903A CN110739410A CN 110739410 A CN110739410 A CN 110739410A CN 201911096903 A CN201911096903 A CN 201911096903A CN 110739410 A CN110739410 A CN 110739410A
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China
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layer
barrier layer
light emitting
color filter
display device
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CN201911096903.3A
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Chinese (zh)
Inventor
陈鼎国
徐湘伦
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Huancaixing Technology (Ningbo) Co.,Ltd.
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Wuhan Meixun Semiconductor Co Ltd
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Publication of CN110739410A publication Critical patent/CN110739410A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention discloses a packaging structure for an OLED (organic light emitting diode) display device and a manufacturing method thereof, and the OLED display device, wherein the packaging structure comprises a th barrier layer, a color filter layer and a second barrier layer, the th barrier layer is arranged on the second electrode, the color filter layer is arranged on the th barrier layer, and the second barrier layer is arranged above the color filter layer.

Description

Packaging structure, manufacturing method thereof and OLED display device comprising packaging structure
Technical Field
The present invention relates to the field of Display technologies, and in particular, to packaging structures for active matrix Organic Light-Emitting Diode (AMOLED) Display devices, a method for manufacturing the packaging structures, and an OLED Display device including the packaging structures.
Background
In a micro Display device, an OLED (organic Light-Emitting Diode) can be directly manufactured into a Display device with ultrahigh resolution on a silicon-based CMOS (Complementary Metal Oxide Semiconductor) wafer substrate, which is a huge advantage specific to miniaturization of the OLED.
However, for OLED display devices, invasion of moisture and oxygen existing in the external environment may cause fatal damage to the light emitting device and cause loss of function, so for thin film packaging technology, the most important role is to improve the water and oxygen blocking performance of the thin film packaging technology.
In the related art, TFE encapsulation structures are proposed, which include two inorganic silicon oxynitride films and an organic buffer layer of an organic resin layer sandwiched between the two inorganic silicon oxynitride films, wherein a color filter layer is disposed on the upper inorganic silicon oxynitride film or on the surface of the protective cover plate near the TFE encapsulation side, thereby increasing the overall thickness of the OLED display device or increasing the distance between the filter film and the light emitting device.
Disclosure of Invention
The invention aims to solve the problems of the blocking function of the packaging technology in the existing OLED (organic light emitting diode) display technology and the light leakage and color mixing easily generated when a color filter layer and a light emitting layer in a display are too far away.
The invention also provides a manufacturing method of packaging structures.
The invention also provides OLED display devices with the packaging structure.
According to the packaging structure for the OLED display device, the packaging structure is arranged on the second electrode of the OLED display device and comprises an th barrier layer, a th barrier layer, a color filter layer and a second barrier layer, wherein the th barrier layer is arranged on the second electrode, the color filter layer is arranged on the th barrier layer, and the second barrier layer is arranged above the color filter layer.
According to the packaging structure for the OLED display device, the color filter layer is arranged between the th barrier layer and the second barrier layer, the color filter layer can replace the function of an organic buffer layer in the traditional packaging structure, the th barrier layer and the second barrier layer can completely wrap the color filter layer in the aspect, so that effective thin film packaging structures are formed, the water and oxygen resistance performance can be improved, the distance between the color filter layer and the light emitting layer is shortened in the aspect, the color mixing problem easily caused by long distance in the traditional structure is reduced, and the color display quality and the effect of the OLED display device are improved.
In examples of the present invention, the package structure further includes a third barrier layer disposed between the barrier layer and the color filter layer.
In examples of the present invention, the th barrier layer, the second barrier layer and the third barrier layer are separate barrier layers.
In examples of the present invention, the thickness of the barrier layer is d1, the thickness of the second barrier layer is d2, the thickness of the third barrier layer is d3, and the thickness of the color filter layer is d4, where d1 is greater than or equal to 0.1um and less than or equal to 3um, d2 is greater than or equal to 0.1um and less than or equal to 10um, d3 is greater than or equal to 0.1um and less than or equal to 3um, and d4 is greater than or equal to 1um and less than or equal to 20 um.
According to examples of the present invention, the package structure further includes a third barrier layer disposed between the barrier layer and the color filter layer.
In examples of the present invention, the barrier layer may be a thin film layer formed by Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD), and the third barrier layer may be a thin film layer formed by CVD or ALD.
In of the present invention, the barrier layer is a thin film layer formed by a chemical vapor deposition method, and the third barrier layer is a thin film layer formed by an atomic layer deposition method.
According to embodiments of the present invention, the color filter layer is or more of a red filter, a green filter, a blue filter, and a transparent filter.
According to embodiments of the present invention, the film package structure further includes a protective cover attached over the second barrier layer by glue.
According to the manufacturing method of the packaging structure for the OLED display device, the packaging structure is the packaging structure for the OLED display device, the manufacturing method comprises the steps of manufacturing th barrier layers on the second electrodes in an atomic layer deposition mode or a chemical vapor deposition mode, manufacturing third barrier layers on the th barrier layers in the atomic layer deposition mode or the chemical vapor deposition mode, preparing the color filter layers on the corresponding sub-pixels on the third barrier layers, and manufacturing the second barrier layers on the color filter layers in the atomic layer deposition mode or the chemical vapor deposition mode.
According to the manufacturing method of the packaging structure for the OLED display device, provided by the embodiment of the invention, two to three inorganic barrier layers are contained, so that the water and oxygen resistance of the packaging structure can be greatly improved.
The OLED display device comprises a substrate, a flat layer, a pixel defining layer, a white light emitting device layer, a second electrode and a packaging structure, wherein the substrate is provided with a plurality of thin film transistors arranged at intervals, each thin film transistor is provided with an th electrode, the flat layer is arranged on the thin film transistor to form a flat assembly layer, the pixel defining layer is arranged on the flat layer and separates sub-pixels so that the thin film transistors can independently control organic diode light emitting devices of the sub-pixels, the white light emitting device layer is arranged on the th electrode, the second electrode is arranged on the white light emitting device layer, the packaging structure is the packaging structure for the OLED display device, the packaging structure is arranged on the second electrode, and a color filter layer is arranged opposite to the white light emitting device layer.
According to the OLED display device provided by the embodiment of the invention, by arranging the packaging structure, the water and oxygen resistance of the OLED display device can be improved, the service life of the OLED display device can be prolonged, and the display effect of the OLED display device can be improved.
In examples of the present invention, the white light emitting device layer comprises at least two light emitting device units stacked on top of each other, the light emitting device unit comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, the electron injection layer of the uppermost light emitting device unit is provided with a second electrode, and a cover layer and a second buffer layer are formed thereon.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural diagram of exemplary thin film encapsulation structures according to the present invention;
FIG. 2 is a flow chart of a method for fabricating thin film encapsulation structures according to an embodiment of the invention;
fig. 3 is a schematic structural view of white OLED display devices according to embodiments of the present invention.
Reference numerals:
100. the white light OLED display device comprises a white light OLED display device body, a thin film packaging structure 200, a substrate 1, a substrate 2, an buffer layer 3, an insulating layer 4, a conducting layer 5, a second insulating layer 6, a gate electrode 7, a flat layer 8, a electrode 9, a pixel defining layer 10, an OLED unit 11, an OLED second unit 12, a second electrode 13, a covering layer 14, a second buffer layer 15, a blocking layer 16, a third blocking layer 17, a color filter layer 17, a red filter film 17a, a green filter film 17b, a blue filter film 17c, a transparent filter film 17d, a second blocking layer 18, an optical glue 19, an optical glue 20 and a protective cover plate.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
Referring to fig. 1-3, the package structure, the manufacturing method of the package structure and the OLED display device for the OLED display device according to the present invention are described, taking a white OLED display device (white organic light emitting diode, WOLED) and a thin film package structure (thin film encapsulation, TFE) of the white OLED display device (white organic light emitting diode, WOLED) as an example, in this embodiment, the thin film package structure (thin film encapsulation, TFE)200 of the white OLED display device (white organic light emitting diode, WOLED)100 may include a substrate 1, a Thin Film Transistor (TFT)2, a flat layer 7, OLED light emitting devices 8-14 (a th electrode 8, a pixel defining layer 9, an OLED unit 10, an OLED second covering layer 11, a second electrode 12, a second electrode 13, a buffer layer 14, and a buffer layer 15, and the OLED display device may include a thin film buffer layer 100, a buffer layer 14, and a buffer layer 15.
As shown in fig. 1, the thin film encapsulation structure 200 for the white OLED display device 100 according to the embodiment of the invention includes an th barrier layer 15, a color filter layer 17, and a second barrier layer 18.
The barrier layer 15 may be disposed on the second electrode 12, the color filter layer 17 may be disposed on the barrier layer 15, and the second barrier layer 18 may be disposed above the color filter layer 17. that is, the color filter layer 17 is sandwiched between the barrier layer 15 and the second barrier layer 18, the barrier layer 15 and the second barrier layer 18 may completely wrap the color filter layer 17, and the color filter layer 17 may replace the function of an organic buffer layer in a conventional package structure.
Therefore, through the above arrangement, in the aspect of , the barrier layer 15 and the second barrier layer 18 can completely wrap the color filter layer 17, so as to form effective thin film packaging structures, and therefore, the water and oxygen resistance can be improved, furthermore, step, because the color filter layer 17 is clamped in the thin film packaging structure 200, the distance between the light emitting layer in the OLED display device 100 and the color filter layer 17 can be shortened, thereby reducing the color mixing problem easily caused by a long distance in the conventional structure, and therefore, the color display quality and effect of the white OLED display device 100 can be improved.
As shown in fig. 1, according to embodiments of the present invention, the thin film package structure 200 may further include a third barrier layer 16, and the third barrier layer 16 may be disposed between the th barrier layer 15 and the color filter layer 17. specifically, layers of the third barrier layer 16 may be disposed on the th barrier layer 15, then the color filter layer 17 may be disposed on the third barrier layer 16, and finally layers of the second barrier layer 18 may be fabricated on the color filter layer 17, so that the water and oxygen blocking performance of the thin film package structure 200 may be further improved by due to the above-mentioned arrangement.
As shown in fig. 1, in embodiments of the present invention, the barrier layer 15 may be an atomic layer deposition layer, the third barrier layer 16 may be a chemical vapor deposition layer, or the barrier layer 15 may be a chemical vapor deposition layer, and the third barrier layer 16 may be an atomic layer deposition layer.
The thickness of the th barrier layer 15 is d1, the thickness of the second barrier layer 18 is d2, the thickness of the third barrier layer 16 is d3, the thickness of the color filter layer 17 is d4, wherein d1 is not less than 0.1um and not more than 3um, d2 is not less than 0.1um and not more than 10um, d3 is not less than 0.1um and not more than 3um, d4 is not less than 1um and not more than 20 um., so that the packaging performance of the thin film package structure 200 can be improved, and the blocking performance of the thin film package structure 200 can be ensured.
Further , the atomic layer deposition layer can be made of silicon nitride, aluminum oxide, zirconium oxide, magnesium oxide or other materials that can be used for atomic layer deposition, and the chemical vapor deposition layer can be made of materials that can be made by chemical vapor deposition, such as an inorganic barrier layer (inorganicbarrier layer) of silicon nitride, silicon oxide, silicon oxynitride, or a mixed barrier layer (hybrid barrier layer) of inorganic and organic compositions.
As shown in fig. 1, according to embodiments of the present invention, the film package structure 200 may further include a protective cover 20, the protective cover 20 may be disposed on the second barrier layer 18, the protective cover 20 has good waterproof performance, so as to improve the water and oxygen resistance of the film package structure 200, as shown in fig. 3, an optical glue 19 is further disposed on a lower surface of the protective cover 20, and the optical glue 19 plays a role of adhering and fixing the protective cover 20, so as to ensure the reliability of the protective cover 20.
As shown in fig. 1, according to embodiments of the present invention, the color filter layer 17 may be or more of a red filter 17a, a green filter 17b, a blue filter 17c, and a transparent filter 17d, that is, the color filter layer 17 may be a monochromatic filter, and the color filter layer 17 may also be a multicolor filter, according to the principle of optical three primary colors, the three colors of red, green, and blue may be formed into different colors by adjusting the matching ratio, so as to meet the display requirement of the full-color white OLED display device 100, wherein the transparent filter 17d may increase the transmittance of the light emitted by the OLED device, so as to increase the display brightness of the whole white OLED display device 100.
The thin film encapsulation structure 200 for the white OLED display device 100 according to the present invention is described in detail with specific embodiments with reference to fig. 1.
As shown in fig. 1, the thin film encapsulation structure 200 includes an th barrier layer 15, a color filter layer 17, a second barrier layer 18, and a third barrier layer 16, and is protected by a protective cover 20.
The barrier layer 15 may be disposed on the second buffer layer 14 of the uppermost stacked light emitting unit of the white OLED display device 100, the barrier layer 15 may be a thin film layer manufactured by an atomic layer deposition method, the barrier layer 15 may be formed with a third barrier layer 16, the third barrier layer 16 may be a thin film layer manufactured by a chemical vapor deposition method, the color filter layer 17 may be disposed on the third barrier layer 16, the color filter layer 17 includes a red filter film 17a, a green filter film 17b, a blue filter film 17c, and a transparent filter film, which are sequentially arranged, the second barrier layer 18 may be disposed above the color filter layer 17, that is, the color filter layer 17 is sandwiched between the second barrier layer 18 and the third barrier layer 16, the color filter layer 17 is completely wrapped by the second barrier layer 18 and the third barrier layer 16, and finally, the protective cover plate 20 may be attached above the second barrier layer 18 by an adhesive.
It can be understood that the color filter layer 17 is disposed between the barrier layer 15 and the second barrier layer 18, the barrier layer 15 and the second barrier layer 18 can completely wrap the color filter layer 17 in the aspect of , and the thickness of the package is increased, so that a package structure for effectively blocking moisture and air from invading is formed, thereby greatly improving the moisture and oxygen blocking performance of the film package structure 200, and the distance between the color filter layer 17 and the light emitting layer is shortened in the aspect of , so that the display effect of the white OLED display device 100 is improved.
As shown in fig. 2, the method for manufacturing the thin film encapsulation structure 200 for the white OLED display device 100 according to the above embodiment of the present invention may include:
the th barrier layer 15 is formed on the second electrode 12 by using an atomic layer deposition method or a chemical vapor deposition method, and the third barrier layer 16 is formed on the th barrier layer 15 by using an atomic layer deposition method and a chemical vapor deposition method, that is, the th barrier layer 15 and the third barrier layer 16 may be formed in different deposition methods.
The atomic layer manufactured by the atomic layer deposition method has high tightness and covering performance, so that the reliability of the formed barrier layer is higher than that of the barrier layer manufactured by the chemical vapor deposition method, but the film forming and plating rate of the atomic layer manufactured by the atomic layer deposition method is lower than that of the film manufactured by the chemical vapor deposition method.
After the third barrier layer 16 is manufactured, the red filter film 17a, the green filter film 17b, the blue filter film 17c and the transparent filter film 17d may be prepared on corresponding sub-pixels of the third barrier layer 16 to form the color filter layer 17, and then the second barrier layer 18 may be manufactured on the color filter layer 17 by using an atomic layer deposition method or a chemical vapor deposition method, so that the color filter layer 17 may be tightly wrapped at by the barrier layer 15, the second barrier layer 18 and the third barrier layer 16, thereby the intrusion speed of water and oxygen may be increased, the intrusion difficulty of water and oxygen may be increased, and the performance of the thin film package structure 200 for blocking water and oxygen may be greatly improved.
According to the manufacturing method of the film packaging structure 200 for the white OLED display device 100, the high-efficiency barrier function can be manufactured through a simple structure, and the water and oxygen resistance of the film packaging structure 200 is greatly improved.
As shown in FIG. 3, the white OLED display device 100 according to the embodiment of the present invention may include a substrate 1, Thin Film Transistors (TFTs) 2 to 6, a planarization layer 7, an th electrode 8, a pixel defining layer 9, white light emitting device layers 10 to 14 including at least an OLED th cell 10 and an OLED second cell 11, and the thin film encapsulation structure 200 according to the above-described embodiment of the present invention.
An th buffer layer 2 can be formed on the substrate 1, a plurality of Thin Film Transistors (TFT) can be formed thereon, the TFT includes a th insulating layer 3, a second insulating layer 5, a gate electrode 6 and a conducting layer 4, a th electrode 8 is respectively arranged on each Thin Film Transistor (TFT), the conducting layer 4 is controlled by the gate electrode 6 to charge the th electrode, a flat layer 7 is arranged between the TFT and the th electrode to form a flat assembly layer, a pixel defining layer 9 is arranged on the flat layer 7 and separates the sub-pixels, a white light emitting device layer of each sub-pixel can be formed on the th electrode 19, and a second electrode 12 is arranged on the white light emitting device layer.
The th electrode 4 may be deposited with organic light emitting material to form a white light emitting device layer, and the white light emitting device layer is disposed opposite to and adjacent to the color filter layer 17 in the thin film encapsulation structure 200 according to the above embodiment of the present invention, so as to shorten the light transmission distance between the white light emitting device layer and the color filter layer 17, thereby reducing the light leakage and color mixing problem that may occur in the conventional structure with a large distance, and particularly in the AMOLED display with high resolution, thereby improving the display quality and effect of the white OLED display device 100.
According to embodiments of the present invention , the white light emitting device layer includes at least the th and the second OLED units 10 and 11, i.e., at least two OLED units, each of which is light emitting device units, each of which may be composed of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an emission layer (EML), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL), the second electrode 12 is disposed on the electron injection layer of the uppermost light emitting device unit, and a capping layer (CPL)13 and a second Buffer layer (Buffer)14 are further formed thereon, the second electrode 12 is disposed on the electron injection layer of the uppermost layer of the stack of light emitting device units, and thus, the white light emitting device layer may emit white light due to the function of transporting electrons between the th and second electrodes 8 and 12 to obtain the light emitting effect of the white OLED display device 100, and in case of a special light emitting device design, the white light may also be formed of OLED light emitting units.
According to the white light OLED display device 100 provided by the embodiment of the invention, by arranging the film packaging structure 200, the water and oxygen blocking performance of the white light OLED display device 100 can be improved, the service life of the white light OLED display device 100 can be prolonged, and the color display effect of the white light OLED display device 100 with high resolution can be improved.
The thin film encapsulation structure 200 is disposed on the second electrode 12, and the red filter 17a, the green filter 17b, the blue filter 17c, and the transparent filter 17d on the color filter layer 17 are disposed opposite to the corresponding white light emitting device layers.
According to embodiments of the present invention, the color filter layer 17 can be of red filter film 17a, green filter film 17b, blue filter film 17c and transparent filter film 17d, that is, the color filter layer 17 can be a single color filter film, and the color filter layer 17 can also be a multi-color filter film, when the color filter layer 17 is a multi-color filter film, the red, green and blue colors can be matched to form different colors according to the principle of optical three primary colors, thereby meeting the light emission requirements of the full-color white OLED display device 100.
Optionally, the white OLED display device 100 and the package structure 200 of the embodiment of the invention may be used for a micro display in a wearable device, such as a Virtual Reality (VR), an Augmented Reality (AR), a Mixed Reality (MR), and an electronic skin; the white OLED display device 100 may also be used for mobile phones, smart phones, electronic books, electronic newspapers, televisions, laptop computers, vehicle-mounted displays, and the like.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, as used herein, refer to orientations and positional relationships illustrated in the drawings, which are for convenience only and to simplify the description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus are not to be construed as limiting the present invention.
In the description of the present invention, it should be noted that unless otherwise specifically stated or limited, the terms "mounted," "connected," and "connected" are used to mean, for example, either fixedly or removably connected or physically connected, mechanically or electrically connected, directly or indirectly connected through an intermediary, or communicating between two elements.
In the description herein, reference to the terms " embodiments," " embodiments," "exemplary embodiments," "examples," "specific examples," or " examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least embodiments or examples of the invention.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (9)

1, A package structure for OLED display device, wherein the package structure is disposed on the second electrode of the OLED display device, the package structure comprises:
an th barrier layer, the th barrier layer being disposed on the second electrode;
a color filter layer disposed on the th barrier layer;
and the second barrier layer is arranged above the color filter layer.
2. The package structure of claim 1, further comprising a third barrier layer disposed between the th barrier layer and the color filter layer.
3. The encapsulation structure of claim 2, wherein the th barrier layer, the second barrier layer and the third barrier layer are independent barrier layers.
4. The packaging structure of claim 2, wherein the thickness of the th barrier layer is d1, the thickness of the second barrier layer is d2, the thickness of the third barrier layer is d3, the thickness of the color filter layer is d4, wherein d1 is greater than or equal to 0.1um and less than or equal to 3um, d2 is greater than or equal to 0.1um and less than or equal to 10um, d3 is greater than or equal to 0um and less than or equal to 3um, and d4 is greater than or equal to 1um and less than or equal to 20 um.
5. The encapsulation structure for the OLED display device according to claim 1, wherein the color filter layer is or more of a red filter, a green filter, a blue filter and a transparent filter.
6. The packaging structure of any of claims 1-5 and , further comprising a protective cover sheet attached over the second barrier layer by glue.
7, A method for manufacturing the packaging structure of OLED display device, wherein the packaging structure is the packaging structure of claim 3, the method comprises:
manufacturing the th barrier layer on the second electrode by adopting an atomic layer deposition mode or a chemical vapor deposition mode;
manufacturing the third barrier layer on the th barrier layer by adopting an atomic layer deposition mode or a chemical vapor deposition mode;
preparing the color filter layer on the corresponding sub-pixel on the third barrier layer;
and manufacturing the second barrier layer on the color filter layer by adopting an atomic layer deposition mode or a chemical vapor deposition mode.
An OLED display device, comprising:
the thin film transistor array substrate comprises a substrate, wherein a plurality of thin film transistors are arranged at intervals on the substrate, and th electrodes are respectively arranged on each thin film transistor;
a planarization layer disposed over the thin film transistor to form a planarized assembly layer;
a pixel defining layer disposed on the planarization layer and separating the sub-pixels so that the thin film transistors independently control the organic diode light emitting devices of the respective sub-pixels;
a white light emitting device layer disposed on the th electrode;
a second electrode disposed on the white light emitting device layer;
an encapsulation structure for an OLED display device according to any of claims 1-6, wherein the encapsulation structure is disposed on the second electrode, and the color filter layer is disposed opposite to the white light emitting device layer in the individual sub-pixel region.
9. The OLED display device according to claim 8, wherein the white light emitting device layer comprises at least two light emitting device units stacked one on another, the light emitting device units are composed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, the electron injection layer of the uppermost light emitting device unit is provided with a second electrode on which a cover layer and a second buffer layer are further formed, and the encapsulation structure is disposed on the buffer layer of the uppermost light emitting device unit stack.
CN201911096903.3A 2018-11-12 2019-11-11 Packaging structure, manufacturing method thereof and OLED display device comprising packaging structure Pending CN110739410A (en)

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WO2022027721A1 (en) * 2020-08-06 2022-02-10 武汉华星光电半导体显示技术有限公司 Flexible display panel, display device and preparation method therefor

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