CN110728097A - Process quality evaluation method and system for inverted trapezoid or T-shaped structure - Google Patents
Process quality evaluation method and system for inverted trapezoid or T-shaped structure Download PDFInfo
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Abstract
The invention discloses a process quality evaluation method and a system of an inverted trapezoid or T-shaped structure.A front diffraction overlay structure aligned with a target layer and a diffraction overlay structure of the target layer are designed, and the diffraction overlay structure of the target layer deviates the same overlay offset along a direction parallel to the front diffraction overlay structure; photoetching and etching to obtain an inverted trapezoidal structure or a T-shaped structure required by a target; measuring an overlay mark based on diffraction, recording the light intensity difference of positive and negative first-order diffraction under the overlay offset, and calculating the slope between the light intensity difference and the overlay offset; and calculating the rule between the size change of the structure to be measured and the light intensity difference, and calculating to obtain the width deviation of the inverted trapezoid or T-shaped structure caused by the process. The invention can effectively avoid the damage of measurement methods such as slicing and the like to the micro-nano structure, makes up the defect that the overlooking electron beam imaging measurement method cannot accurately present the bottom characteristics, improves the overall measurement performance of the existing system, and improves the cost and yield control.
Description
Technical Field
The invention relates to the field of integrated circuit processes, in particular to a process quality evaluation method and system for an inverted trapezoid or T-shaped structure.
Background
The inverted trapezoidal structure or the T-shaped structure is a difficult point for the process manufacturing of integrated circuits, and is mainly used for the process of MEMS structures and special chip structures. The measurement of the inverted trapezoid or T-shaped structure is a difficult point of the current measurement, especially the bottom information is difficult to be observed by the traditional electron beam overlooking imaging technology, and the electron beam imaging technology, especially the CDSEM technology, needs a strong electron beam current and controls the electron beam imaging focus to be able to penetrate the top layer structure and observe the bottom layer structure. The information and the size of the side wall of the inverted trapezoid or T-shaped structure can be measured by observing the size of the cross section by means of slicing and the like. However, this dicing technique is an irreversible technique and causes damage to the device structure.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides a process quality evaluation method and a system of an inverted trapezoid or T-shaped structure aiming at the defects.
The technical scheme is as follows:
the process quality evaluation method of the inverted trapezoid or T-shaped structure comprises the following steps:
step S01, designing a front layer diffraction overlay structure which is aligned with the target layer: the front layer diffraction alignment structure comprises at least two groups of equal period grating structures arranged in the horizontal direction and at least two groups of equal period grating structures arranged in the vertical direction;
designing a diffraction overlay structure of a target layer: the diffraction alignment structure of the target layer is completely the same as the inverted trapezoid or T-shaped structure design of the target layer; the diffraction alignment structure of the target layer comprises a first diffraction structure and a second diffraction structure, wherein the period of the first diffraction structure is a first period, the period of the second diffraction structure is a second period, the first period is the same as the period of an equal-period grating structure of the front-layer diffraction alignment structure, and the second period is the period of an inverted trapezoid or T-shaped structure to be detected;
step S02, comparing the center coordinates of the diffraction alignment structure of the target layer with the front layer diffraction alignment structure, and respectively offsetting the same alignment offset along the periodic arrangement direction of each group of equal periodic grating structures parallel to the front layer diffraction alignment structure;
step S03, carrying out photoetching and etching processes on all the graph structures of the target graph layer to obtain an inverted trapezoidal structure or a T-shaped structure required by the target;
step S04, the overlay mark measurement based on diffraction is carried out on the whole structure composed of the diffraction overlay structure of the front layer and the diffraction overlay structure of the target layer, the positive and negative first-order diffraction light intensity difference under the overlay offset is recorded, and the slope between the light intensity difference and the overlay offset is calculated;
step S05, according to the photoetching film structure information of the front layer diffraction alignment structure and the target layer diffraction alignment structure, including the thickness, the refractive index and the light absorption coefficient of each film, then according to the slope between the light intensity difference and the alignment offset obtained in the step S04, an optical simulation model is established, the rule between the size change of the structure to be measured and the light intensity difference is calculated, the size distribution profile of the inverted trapezoid or T-shaped structure is drawn, and the width deviation of the inverted trapezoid or T-shaped structure caused by the process is obtained through calculation.
Further, in step S01, the period of the isoperiod grating structure in the front-layer diffraction overlay structure is 500 nm to 100 μm.
Further, in step S01, the equal-period grating structures include two pattern structures, i.e., grating structures periodically arranged in the horizontal direction and grating structures periodically arranged in the vertical direction.
Further, in step S01, the front layer diffractive overlay structure is interlaced with two kinds of equal grating pattern structures.
Further, in step S01, the front diffraction overlay structure includes two sets of grating structures periodically arranged in the horizontal direction and two sets of grating structures periodically arranged in the vertical direction, and the grating structures are symmetrically arranged in opposite angles, that is, the two sets of grating structures periodically arranged in the horizontal direction are respectively located in the first quadrant and the third quadrant, and the two sets of grating structures periodically arranged in the vertical direction are respectively located in the second quadrant and the fourth quadrant.
Further, in step S01, if the second period is 1 to 10 micrometers, the first period is the same as the second period, and is used as the period of the medium-period grating structure in the front-layer diffraction overlay structure;
if the second period is 10 nm to 1 μm, the first diffraction structure is designed as follows: the inverted trapezoid or T-shaped structure is arranged according to the second period, and a group of 5 to 20 second periods is used as an approximate half period of the first period, which is 10 to 40 periods of the second period.
Further, in step S04, using at least 1 detection wavelength, the light intensity difference of the positive and negative first order diffraction at each detection wavelength is recorded, and the slope of the light intensity and the overlay offset is calculated.
A process quality assessment of an inverted trapezoid or T-shaped structure comprises a photoetching machine, a photoetching film structure, an alignment measurement module and a process quality assessment module;
the photoetching film structure comprises a mask plate and an alignment mark structure, wherein the mask plate covers a wafer, and the alignment mark structure comprises the front diffraction alignment structure and the diffraction alignment structure of the target image layer; compared with the front-layer diffraction alignment structure, the central coordinate of the diffraction alignment structure of the target layer is respectively offset by the same alignment offset amount along the periodic arrangement direction of each group of equal-period grating structures parallel to the front-layer diffraction alignment structure;
the photoetching machine is used for photoetching and etching a wafer target layer to obtain an inverted trapezoid or T-shaped structure required by a target;
the alignment measuring module adopts a light sensor and is used for measuring the alignment mark based on diffraction on the whole photoetching film structure;
the process quality evaluation module is a computer and is used for recording the positive and negative first-order diffraction light intensity difference under the fixed alignment offset value obtained by the alignment measurement module based on the alignment mark measurement of diffraction, and calculating the light intensity difference-alignment slope according to the positive and negative first-order diffraction light intensity difference; and then establishing an optical simulation model according to the photoetching film structure information including the thickness, the refractive index and the light absorption coefficient of each film, calculating the rule between the size change of the structure to be detected and the light intensity difference, and drawing a size distribution profile diagram of the inverted trapezoid or T-shaped structure, thereby calculating the width deviation of the inverted trapezoid or T-shaped structure caused by the process.
Has the advantages that: according to the invention, an evaluation method and a measurement system are established for the bottom width and the size uniformity of the inverted trapezoid or T-shaped structure with the micro-nano size, so that the damage of measurement methods such as slicing and the like to the micro-nano structure can be effectively avoided, and the defect that the overlooking electron beam imaging measurement method cannot accurately present the bottom characteristics is overcome. The invention is based on the existing integrated circuit measurement characterization system, and improves the overall measurement performance of the existing system by adding a new algorithm module, and improves the cost and yield control.
Drawings
FIG. 1 is a flow chart of the method of the present invention.
FIG. 2 is a schematic diagram of a front layer diffractive overlay structure in accordance with an embodiment of the present invention.
FIG. 3 is a schematic diagram of the diffraction overlay marks and the overlay offsets of the front layer and the current layer according to the present invention.
FIG. 4 is a diagram illustrating a target layer diffraction overlay structure with a period of ten nanometers in an embodiment of the present invention.
FIG. 5 is a fine diagram of a second diffractive structure of the target layer diffractive overlay structure having a period of ten nanometers in an embodiment of the present invention.
FIG. 6 is a graph of diffracted light intensity difference versus overlay offset for different widths of interlayer structures.
FIG. 7 is a graph of overlay slope versus T-shaped intermediate structure width for diffracted + -1 order intensity differences.
Detailed Description
The invention is further elucidated with reference to the drawings and the embodiments.
FIG. 1 is a flow chart of the method of the present invention. As shown in fig. 1, the method for evaluating the process quality of the inverted trapezoid or T-shaped structure of the present invention comprises the following steps:
step S01, designing a front layer diffraction alignment structure and a diffraction alignment structure of a target layer which are aligned with the target layer;
designing a front diffraction overlay structure aligned with a target layer:
the front layer diffraction alignment structure comprises at least two groups of equal period grating structures arranged in the horizontal direction and at least two groups of equal period grating structures arranged in the vertical direction.
FIG. 2 is a schematic diagram of a front layer diffractive overlay structure in accordance with an embodiment of the present invention. As shown in fig. 2, the period of the equal-period grating structure in the front-layer diffraction overlay structure is 500 nm to 100 μm, the equal-period grating structure includes two pattern structures, namely a grating structure periodically arranged in the horizontal direction and a grating structure periodically arranged in the vertical direction, wherein at least two groups of pattern structures are placed along the horizontal direction to determine the process quality of the target structure to be measured in the horizontal direction; and placing at least two groups of graphic structures along the vertical direction to determine the process quality of the target structure to be tested in the vertical direction.
In the invention, the front layer diffraction overlay structure adopts two equal grating pattern structures which are arranged in a staggered mode.
In this embodiment, the front diffraction overlay structure includes two sets of grating structures periodically arranged in the horizontal direction and two sets of grating structures periodically arranged in the vertical direction, and the grating structures are symmetrically arranged in the diagonal direction, that is, the two sets of grating structures periodically arranged in the horizontal direction are respectively located in the first quadrant and the third quadrant, and the two sets of grating structures periodically arranged in the vertical direction are respectively located in the second quadrant and the fourth quadrant.
Optionally, two or more groups of equal-period grating structures, or more than two groups of 1 or at least two equal-period grating structures are placed in each direction according to the number of the grating structures periodically arranged in the horizontal direction and the grating structures periodically arranged in the vertical direction in the front-layer diffraction overlay structure.
Designing a diffraction overlay structure of a target layer:
the diffraction alignment structure of the target layer is completely the same as the T-shaped structure or the inverted trapezoid structure of the target layer in design.
The diffraction alignment structure of the target layer comprises a first diffraction structure and a second diffraction structure, wherein the period of the first diffraction structure is a first period, the period of the second diffraction structure is a second period, the first period is the same as the period of an equal-period grating structure of the front-layer diffraction alignment structure, and the second period is the period of an inverted trapezoid or T-shaped structure to be detected.
And if the second period is 1-10 microns, the first period is the same as the second period, and the first period is used as the period of the medium-period grating structure in the front-layer diffraction alignment structure.
If the second period is 10 nm to 1 μm, the first diffraction structure is designed as follows: the inverted trapezoid or T-shaped structure is arranged according to the second period, and a group of 5 to 20 second periods is used as an approximate half period of the first period, which is 10 to 40 periods of the second period. As shown in fig. 4 and 5, it is shown that in one first diffraction structure, the inverted trapezoidal structure is the second diffraction structure, and 20 inverted trapezoidal structures in total constitute the first diffraction structure, so that the designed period of the first diffraction structure is 40 second periods.
Step S02, in order to ensure overlay measurement, the center coordinates of the diffraction overlay structure of the target layer are shifted by the same overlay shift amount along the periodic arrangement direction of each group of equal periodic grating structures parallel to the diffraction overlay structure of the front layer, as compared with the diffraction overlay structure of the front layer, as shown in fig. 3.
Further, in this embodiment, the center coordinates of the diffractive overlay structure of the target layer are shifted by the same offset in the + Y and-Y directions in the first and third quadrants, respectively, as compared with the front layer diffractive overlay structure; the second and fourth quadrants are shifted in the + X and-X directions by the same offset as previously described.
And step S03, carrying out photoetching and etching processes on all the graph structures of the target graph layer to obtain the inverted trapezoid or T-shaped structure required by the target.
Step S04, the overlay mark measurement based on diffraction is carried out on the whole structure composed of the diffraction overlay structure of the front layer and the diffraction overlay structure of the target layer; and recording the light intensity difference of the positive and negative first-order diffraction under the alignment offset, and calculating the light intensity difference-alignment slope.
Optionally, at least 1 detection wavelength is used, the light intensity difference of the positive and negative first-order diffraction under each detection wavelength is respectively recorded, the slope of the light intensity and the alignment offset is calculated, and the measurement error is eliminated.
And step S05, establishing an optical simulation model according to the photoetching film structure information of the front-layer diffraction alignment structure and the target layer diffraction alignment structure, including the thickness, the refractive index and the light absorption coefficient of each film, and calculating the rule between the size change and the light intensity difference of the structure to be measured, thereby calculating the width deviation of the inverted trapezoidal structure or the T-shaped structure caused by the process.
In this embodiment, a simulated curve of the positive and negative first-order light intensity difference along with the overlay offset is shown in fig. 6. The invention firstly needs to reasonably select a proper period of the front layer diffraction structure to ensure that the light intensity curve in the alignment deviation range presents a linear relation. Secondly, the bottom width of the T-shaped structure was varied at equal intervals, and the slope was found to vary linearly, as shown in FIG. 7.
The invention also provides a process quality evaluation system of the inverted trapezoid or T-shaped structure, which comprises a photoetching machine, a photoetching film structure, an alignment measurement module and a process quality evaluation module.
The photoetching film structure comprises a mask plate and an alignment mark structure, wherein the mask plate covers a wafer, and the alignment mark structure comprises the front diffraction alignment structure and the diffraction alignment structure of the target image layer; compared with the front-layer diffraction alignment structure, the central coordinate of the diffraction alignment structure of the target layer is respectively offset by the same alignment offset amount along the periodic arrangement direction of each group of equal-period grating structures parallel to the front-layer diffraction alignment structure;
the photoetching machine is used for photoetching and etching a wafer target layer to obtain an inverted trapezoid or T-shaped structure required by a target;
the alignment measuring module adopts a light sensor and is used for measuring the alignment mark based on diffraction on the whole photoetching film structure;
the process quality evaluation module is a computer and is used for recording the positive and negative first-order diffraction light intensity difference under the fixed alignment offset value obtained by the alignment measurement module based on the alignment mark measurement of diffraction, and calculating the light intensity difference-alignment slope according to the positive and negative first-order diffraction light intensity difference; and then establishing an optical simulation model according to the photoetching film structure information including the thickness, the refractive index and the light absorption coefficient of each film, calculating the rule between the size change of the structure to be detected and the light intensity difference, and drawing a size distribution profile diagram of the inverted trapezoid or T-shaped structure, thereby calculating the width deviation of the inverted trapezoid or T-shaped structure caused by the process.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the foregoing embodiments, and various equivalent changes (such as number, shape, position, etc.) may be made to the technical solution of the present invention within the technical spirit of the present invention, and the equivalents are protected by the present invention.
Claims (8)
1. The process quality evaluation method of the inverted trapezoid or T-shaped structure is characterized in that: the method comprises the following steps:
step S01, designing a front layer diffraction overlay structure which is aligned with the target layer: the front layer diffraction alignment structure comprises at least two groups of equal period grating structures arranged in the horizontal direction and at least two groups of equal period grating structures arranged in the vertical direction;
designing a diffraction overlay structure of a target layer: the diffraction alignment structure of the target layer is completely the same as the inverted trapezoid or T-shaped structure design of the target layer; the diffraction alignment structure of the target layer comprises a first diffraction structure and a second diffraction structure, wherein the period of the first diffraction structure is a first period, the period of the second diffraction structure is a second period, the first period is the same as the period of an equal-period grating structure of the front-layer diffraction alignment structure, and the second period is the period of an inverted trapezoid or T-shaped structure to be detected;
step S02, comparing the center coordinates of the diffraction alignment structure of the target layer with the front layer diffraction alignment structure, and respectively offsetting the same alignment offset along the periodic arrangement direction of each group of equal periodic grating structures parallel to the front layer diffraction alignment structure;
step S03, carrying out photoetching and etching processes on all the graph structures of the target graph layer to obtain an inverted trapezoidal structure or a T-shaped structure required by the target;
step S04, the overlay mark measurement based on diffraction is carried out on the whole structure composed of the diffraction overlay structure of the front layer and the diffraction overlay structure of the target layer, the positive and negative first-order diffraction light intensity difference under the overlay offset is recorded, and the slope between the light intensity difference and the overlay offset is calculated;
step S05, according to the photoetching film structure information of the front layer diffraction alignment structure and the target layer diffraction alignment structure, including the thickness, the refractive index and the light absorption coefficient of each film, then according to the slope between the light intensity difference and the alignment offset obtained in the step S04, an optical simulation model is established, the rule between the size change of the structure to be measured and the light intensity difference is calculated, the size distribution profile of the inverted trapezoid or T-shaped structure is drawn, and the width deviation of the inverted trapezoid or T-shaped structure caused by the process is obtained through calculation.
2. The method of claim 1, wherein the evaluation method comprises: in step S01, the period of the equal period grating structure in the front layer diffraction overlay structure is 500 nm to 100 μm.
3. The method of claim 1, wherein the evaluation method comprises: in step S01, the equal-period grating structures include two pattern structures, i.e., a grating structure periodically arranged in the horizontal direction and a grating structure periodically arranged in the vertical direction.
4. The method of claim 3, wherein the step of evaluating the process quality comprises: in step S01, the front layer diffraction overlay structure is arranged in a staggered manner by using two equal grating pattern structures.
5. The method of claim 3, wherein the step of evaluating the process quality comprises: in step S01, the front diffraction overlay structure includes two sets of grating structures periodically arranged in the horizontal direction and two sets of grating structures periodically arranged in the vertical direction, and the grating structures are symmetrically arranged in the diagonal direction, that is, the two sets of grating structures periodically arranged in the horizontal direction are respectively located in the first quadrant and the third quadrant, and the two sets of grating structures periodically arranged in the vertical direction are respectively located in the second quadrant and the fourth quadrant.
6. The method of claim 1, wherein the evaluation method comprises: in step S01, if the second period is 1 to 10 micrometers, the first period is the same as the second period, and is used as the period of the medium-period grating structure in the front-layer diffraction overlay structure;
if the second period is 10 nm to 1 μm, the first diffraction structure is designed as follows: the inverted trapezoid or T-shaped structure is arranged according to the second period, and a group of 5 to 20 second periods is used as an approximate half period of the first period, which is 10 to 40 periods of the second period.
7. The method of claim 1, wherein the evaluation method comprises: in step S04, at least 1 detection wavelength is used, the positive and negative first-order diffraction light intensity differences at the respective detection wavelength are recorded, and the slope of the light intensity and the overlay offset is calculated.
8. A process quality evaluation system using the process quality evaluation method of an inverted trapezoid or T-shaped structure according to any one of claims 1 to 7, characterized in that: the device comprises a photoetching machine, a photoetching film structure, an alignment measuring module and a process quality evaluation module;
the photoetching film structure comprises a mask plate and an alignment mark structure, wherein the mask plate covers a wafer, and the alignment mark structure comprises the front diffraction alignment structure and the diffraction alignment structure of the target image layer; compared with the front-layer diffraction alignment structure, the central coordinate of the diffraction alignment structure of the target layer is respectively offset by the same alignment offset amount along the periodic arrangement direction of each group of equal-period grating structures parallel to the front-layer diffraction alignment structure;
the photoetching machine is used for photoetching and etching a wafer target layer to obtain an inverted trapezoid or T-shaped structure required by a target;
the alignment measuring module adopts a light sensor and is used for measuring the alignment mark based on diffraction on the whole photoetching film structure;
the process quality evaluation module is a computer and is used for recording the positive and negative first-order diffraction light intensity difference under the fixed alignment offset value obtained by the alignment measurement module based on the alignment mark measurement of diffraction, and calculating the light intensity difference-alignment slope according to the positive and negative first-order diffraction light intensity difference; and then establishing an optical simulation model according to the photoetching film structure information including the thickness, the refractive index and the light absorption coefficient of each film, calculating the rule between the size change of the structure to be detected and the light intensity difference, and drawing a size distribution profile diagram of the inverted trapezoid or T-shaped structure, thereby calculating the width deviation of the inverted trapezoid or T-shaped structure caused by the process.
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| PCT/CN2019/113211 WO2021072794A1 (en) | 2019-10-18 | 2019-10-25 | Method and system for evaluating process quality of inverted trapezoidal or t-shaped structure |
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| CN117289562A (en) * | 2023-11-22 | 2023-12-26 | 全芯智造技术有限公司 | Method, apparatus and medium for simulating overlay marks |
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