CN110718427A - Coaxial high-efficiency high-power microwave device - Google Patents
Coaxial high-efficiency high-power microwave device Download PDFInfo
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- CN110718427A CN110718427A CN201910923575.3A CN201910923575A CN110718427A CN 110718427 A CN110718427 A CN 110718427A CN 201910923575 A CN201910923575 A CN 201910923575A CN 110718427 A CN110718427 A CN 110718427A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
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Abstract
The invention discloses a coaxial high-efficiency high-power microwave device, which comprises an outer sleeve and an inner conductor coaxial with the outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve; an electron beam transmission channel with the inner diameter of 22mm and the outer diameter of 34mm is formed between the inner conductor and the outer sleeve; the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of the electron beam; the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections; a guide magnetic field is arranged outside the outer sleeve, and the annular electron beam strikes the tail part of the beam wave interaction region through the guide magnetic field; the voltage is 280kV, the current is 1.5kA, the annular electron beam with the diameter of 30mm is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.6T, high-power microwaves with the frequency of 10.3GHz are generated, and the beam conversion efficiency is 60%. The coaxial high-efficiency high-power microwave device can generate high-power microwave and has high microwave output efficiency.
Description
Technical Field
The invention relates to a coaxial high-efficiency high-power microwave device, and belongs to the technical field of high-power microwave devices.
Background
The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the research and application requirements of high-power microwave technology, a high-efficiency microwave source is an important direction for the development of high-power microwaves. The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. The high power microwave conversion efficiency of the device is about 30% generally, so how to improve the efficiency is the key point of the development of the device.
Disclosure of Invention
The invention aims to: aiming at the existing problems, the invention provides a coaxial high-efficiency high-power microwave device which can generate high-power microwave and has high microwave output efficiency.
The technical scheme adopted by the invention is as follows:
a coaxial high-efficiency high-power microwave device comprises an outer sleeve and an inner conductor coaxial with the outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve;
an electron beam transmission channel with the inner diameter of 22mm and the outer diameter of 34mm is formed between the inner conductor and the outer sleeve;
the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of the electron beam;
the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections;
a guide magnetic field is arranged outside the outer sleeve, and the annular electron beam strikes the tail part of the beam wave interaction region through the guide magnetic field;
the voltage is 280kV, the current is 1.5kA, the annular electron beam with the diameter of 30mm is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.6T, high-power microwaves with the frequency of 10.3GHz are generated, and the beam conversion efficiency is 60%.
In the scheme, two ends of an outer sleeve are closed, the inside of the outer sleeve is vacuumized to millipascal level, a cathode emitting an annular electron beam is arranged at one end in the outer sleeve, an inner conductor is connected with the other end opposite to the outer sleeve, a guide magnetic field outside a guide sleeve cylinder extends from the cathode to the tail of a beam wave interaction area, and the annular electron beam is transmitted in a transmission channel and strikes the tail of the beam wave interaction area.
The phase adjusting area can adjust and control the pre-clustering phase of the electron beams to be consistent with the phase of the microwaves, so that the optimal effect of pre-clustering of the electron beams is achieved, and preparation is made for the electron beams to enter the beam wave mutual left and right areas to convert energy into the microwaves; in the beam wave interaction region, the electron beam interacts with the microwave to generate energy conversion, and the electric energy is converted into microwave energy, so that high-power microwave is generated; the microwave reflecting area can reflect the microwaves transmitted to the downstream to the beam wave interaction area, so that the interaction between the electron beam and the microwaves is further improved, and the microwave power output is enhanced.
Preferably, the phase adjusting area comprises a first phase adjusting cavity and a second phase adjusting cavity, the diameter of the first phase adjusting cavity is 40mm, and the axial length of the first phase adjusting cavity is 35 mm; the diameter of the second phase adjusting cavity is 44mm, the axial length is 20mm, and the interval between the two phase adjusting cavities is 20 mm.
Preferably, the beam interaction region comprises 5 beam interaction chambers, the diameters of the beam interaction chambers are 38mm, 38mm, 40mm, 42mm and 42mm in sequence along the transmission direction of the electron beam, and the period of the beam interaction chambers is 30 mm.
Preferably, the microwave reflection area comprises 3 microwave reflection cavities, the diameters of the microwave reflection cavities are 42mm, 42mm and 40mm in sequence along the transmission direction of the electron beam, and the period of the microwave reflection cavities is 30 mm.
Preferably, the phase adjustment region is axially spaced from the beam interaction region by 106mm, and the beam interaction region is axially spaced from the microwave reflection region by 87 mm.
Preferably, the inner conductor has a diameter of 22 mm.
In the above scheme, the beam interaction region and the microwave reflection region are annular groove-shaped cavities with trapezoidal sections, and the right-angled trapezoids at the two ends are used for enhancing impedance abrupt change, so that the energy of the electron beam is rapidly converted, and the oscillation starting time of the microwave is prolonged.
The invention relates to a high-efficiency high-power microwave device which comprises a phase adjusting structure, a beam wave interaction structure and a microwave reflection structure. Wherein, the transmission end of the annular electron beam hits the tail part of the beam wave interaction structure through the guiding magnetic field, and the microwave reflection structure is completely separated from the electron beam, which is the key difference between the invention and the conventional device.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the high-efficiency high-power microwave output is realized by adopting an axial three-section form containing an inner conductor; the microwave reflection structure is designed into a microwave transmission waveguide, interaction between microwave reproduction reflection and electron beams is realized through the slow wave structure, and the coaxial inner channel body further improves the microwave output efficiency, so that the microwave output efficiency reaches 60%.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 is a schematic cross-sectional structure diagram of a high-efficiency high-power microwave device.
The labels in the figure are: 1-phase adjusting area, 2-beam wave interaction area, 3-microwave reflecting area, 4-annular electron beam, 5-guiding magnetic field, 6-outer sleeve, 7-inner conductor, 11-first phase adjusting cavity, 12-second phase adjusting cavity, 21-beam wave interaction cavity and 31-microwave reflecting cavity.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
As shown in fig. 1, the coaxial high-efficiency high-power microwave device of the present embodiment includes an outer sleeve and an inner conductor coaxial with the outer sleeve, wherein a high-frequency structure is disposed in the outer sleeve, and an electron beam transmission channel with an inner diameter of 22mm and an outer diameter of 34mm is formed between the inner conductor and the outer sleeve; the two ends of the outer sleeve are closed, the interior of the outer sleeve is vacuumized to millipascal level, a cathode for emitting annular electron beams is arranged at one end in the outer sleeve, the diameter of the inner conductor is 22mm, and a high-frequency structure is arranged in the outer sleeve;
the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of the electron beam; the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections;
the phase adjusting cavity is an annular groove with a rectangular section, and the beam interaction cavity and the microwave reflecting cavity are both annular grooves with a trapezoidal section; the phase adjusting area comprises a first phase adjusting cavity and a second phase adjusting cavity, the diameter of the first phase adjusting cavity is 40mm, the axial length of the first phase adjusting cavity is 35mm, the diameter of the second phase adjusting cavity is 44mm, the axial length of the second phase adjusting cavity is 20mm, and the interval between the first phase adjusting cavity and the second phase adjusting cavity is 20 mm; the beam interaction area comprises 5 beam interaction cavities, the diameters of the beam interaction cavities are 38mm, 38mm, 40mm, 42mm and 42mm in sequence along the transmission direction of the electron beams, and the period of each beam interaction cavity is 30 mm; the microwave reflection area comprises 3 microwave reflection cavities, the diameters of the microwave reflection cavities are 42mm, 42mm and 40mm in sequence along the transmission direction of the electron beam, and the period of the microwave reflection cavities is 30 mm; the axial spacing between the phase adjustment zone and the beam interaction zone is 106mm, and the axial spacing between the beam interaction zone and the microwave reflection zone is 87 mm.
A guiding magnetic field is arranged outside the outer sleeve, so that the annular electron beam is irradiated on the tail part of the beam wave interaction region;
the voltage 280kV is applied between the cathode and the anode, the cathode emits and generates an annular electron beam with the diameter of 30mm and the beam current intensity of 1.5kA, the annular electron beam is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.6T, the energy of the annular electron beam is transferred to a microwave field, high-power microwave with the frequency of 10.3GHz is generated, and the beam wave conversion efficiency is 60%.
In conclusion, the coaxial high-efficiency high-power microwave device disclosed by the invention realizes high-efficiency high-power microwave output by adopting an axial three-section form containing an inner conductor; the microwave reflection structure is designed into a microwave transmission waveguide, interaction between microwave reproduction reflection and electron beams is realized through the slow wave structure, and the coaxial inner channel body further improves the microwave output efficiency, so that the microwave output efficiency reaches 60%.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (6)
1. A coaxial high-efficiency high-power microwave device is characterized in that: the high-frequency coaxial cable comprises an outer sleeve and an inner conductor coaxial with the outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve;
an electron beam transmission channel with the inner diameter of 22mm and the outer diameter of 34mm is formed between the inner conductor and the outer sleeve;
the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of the electron beam;
the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections;
a guide magnetic field is arranged outside the outer sleeve, and the annular electron beam strikes the tail part of the beam wave interaction region through the guide magnetic field;
the voltage is 280kV, the current is 1.5kA, the annular electron beam with the diameter of 30mm is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.6T, high-power microwaves with the frequency of 10.3GHz are generated, and the beam conversion efficiency is 60%.
2. A coaxial high efficiency high power microwave device according to claim 1 wherein: the phase adjusting area comprises a first phase adjusting cavity and a second phase adjusting cavity, the diameter of the first phase adjusting cavity is 40mm, and the axial length of the first phase adjusting cavity is 35 mm; the diameter of the second phase adjusting cavity is 44mm, the axial length is 20mm, and the interval between the two phase adjusting cavities is 20 mm.
3. A coaxial high efficiency high power microwave device according to claim 1 wherein: the beam interaction area comprises 5 beam interaction cavities, the diameters of the beam interaction cavities are 38mm, 38mm, 40mm, 42mm and 42mm in sequence along the transmission direction of the electron beams, and the period of each beam interaction cavity is 30 mm.
4. A coaxial high efficiency high power microwave device according to claim 1 wherein: the microwave reflecting area comprises 3 microwave reflecting cavities, the diameters of the microwave reflecting cavities are 42mm, 42mm and 40mm in sequence along the transmission direction of the electron beams, and the period of the microwave reflecting cavities is 30 mm.
5. A coaxial high efficiency high power microwave device according to claim 1 wherein: the axial interval between the phase adjusting area and the beam wave interaction area is 106mm, and the axial interval between the beam wave interaction area and the microwave reflecting area is 87 mm.
6. A coaxial high efficiency high power microwave device according to claim 1 wherein: the diameter of the inner conductor is 22 mm.
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| CN201910923575.3A CN110718427B (en) | 2019-09-27 | 2019-09-27 | Coaxial high-power microwave device |
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| CN201910923575.3A CN110718427B (en) | 2019-09-27 | 2019-09-27 | Coaxial high-power microwave device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540656A (en) * | 2020-04-02 | 2020-08-14 | 中国工程物理研究院应用电子学研究所 | S and C waveband double-frequency controllable high-power microwave device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111540656A (en) * | 2020-04-02 | 2020-08-14 | 中国工程物理研究院应用电子学研究所 | S and C waveband double-frequency controllable high-power microwave device |
| CN111540656B (en) * | 2020-04-02 | 2023-03-31 | 中国工程物理研究院应用电子学研究所 | S and C waveband double-frequency controllable high-power microwave device |
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| CN110718427B (en) | 2021-10-26 |
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