CN110707905A - Method for realizing control based on IGBT - Google Patents
Method for realizing control based on IGBT Download PDFInfo
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- CN110707905A CN110707905A CN201910909742.9A CN201910909742A CN110707905A CN 110707905 A CN110707905 A CN 110707905A CN 201910909742 A CN201910909742 A CN 201910909742A CN 110707905 A CN110707905 A CN 110707905A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0012—Control circuits using digital or numerical techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
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Abstract
The invention provides a method for realizing control based on an IGBT (insulated gate bipolar transistor), which belongs to the technical field of power semiconductor modules and comprises a DSP (digital signal processor) controller, an insulated gate bipolar transistor chip, a freewheeling diode chip and a current detector; the DSP controller is coupled to the current detector and is used for receiving the current signal and the control signal detected by the current detector; one end of the insulated gate bipolar transistor chip is also coupled with a frequency converter, and one end of the flow diode chip is also coupled with an uninterruptible power supply. For the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip, the current can be controlled to form a channel through the voltage of the grid electrode, the base current is provided for the PNP transistor, the IGBT is conducted, the channel is eliminated through the voltage of the grid electrode, the base current is cut off, and the damage of the element in the GBT is avoided.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a method for realizing control based on an IGBT.
Background
An IGBT (Insulated Gate Bipolar Transistor) is a composite power electronic device appearing in the middle of the 80 s, and structurally corresponds to a BJT (Bipolar Junction Transistor) with a thick base region driven by a MOSFET (Metal0 oxide semiconductor Field Effect Transistor), and the IGBT has the characteristics of fast response, high input impedance, good thermal stability of the MOSFET, simple driving circuit, high current density, low on-state voltage, and high withstand voltage of the BJT, and is widely used in power electronic devices.
The control method based on the IGBT is a modularized semiconductor product formed by bridge packaging of the IGBT (insulated gate bipolar transistor chip) and the FWD (freewheeling diode chip) through a specific circuit; the encapsulated IGBT-based control method is directly applied to equipment such as a frequency converter, a UPS (uninterrupted power supply) and the like;
however, the existing IGBT cannot detect in time when the control current forms a channel to the gate voltage, and provides a base current to a PNP (originally NPN) transistor, so that the IGBT is turned on, and when the channel is removed to the gate voltage, the base current is cut off, and thus, the damage to the components in the IGBT is easily caused.
Disclosure of Invention
The invention provides a method for realizing control based on an IGBT (insulated gate bipolar transistor), which is characterized in that the existing IGBT can not detect in time when a control current forms a channel to a gate voltage to provide a base current for a PNP (plug-and-play) transistor so as to enable the IGBT to be switched on, and when the channel is eliminated to the gate voltage to cut off the base current, so that the problem that elements in the IGBT are damaged easily occurs.
The technical purpose is realized by the following technical scheme that the IGBT-based control method comprises a DSP controller, an insulated gate bipolar transistor chip, a freewheeling diode chip and a current detector;
the DSP controller is coupled to the current detector and is used for receiving a current signal and a control signal detected by the current detector;
one end of the insulated gate bipolar transistor chip is also coupled with a frequency converter, and one end of the flow diode chip is also coupled with an uninterruptible power supply;
when the IGBT is in a power-on state and the DSP controller is in a power-off state, an N-channel insulated gate bipolar transistor is formed, is an N + region, namely a drain region, is attached to a corresponding motor and is an emitter E, a gate G is formed on the controller below the N-channel insulated gate bipolar transistor, and a channel is formed at the boundary of a gate region and is used for providing base current for a PNP (original NPN) transistor to enable the IGBT to be conducted;
a current detector for detecting whether the current is too high is connected to the channel outlet at the boundary of the gate region;
the current detector is provided with a motor + N pole and a motor-N pole, wherein the + N pole is coupled with the insulated gate bipolar transistor chip, the motor-N pole is coupled with the insulated gate bipolar transistor chip, and the motor-N pole is coupled with the freewheeling diode chip to detect the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip.
Further, in the above-mentioned case,
the LED further comprises a collector C, and a P-type region is formed between the collector C and the emitter E;
the P-type region comprises a P + region and a P-region, sub-channel regions are formed in the P + region and the P-region, the P + region on the other side of the drain region is a drain injection region, and a PNP bipolar transistor is formed together with the drain region and the sub-channel regions and used for injecting holes into the drain electrode by an emitter electrode to conduct modulation, and the on-state voltage of the device is reduced.
Further, in the above-mentioned case,
the insulated gate bipolar transistor chip eliminates a channel through reverse gate voltage when the current of the + N pole is too large, cuts off the current of the base electrode and turns off the IGBT;
the output drain current ratio is controlled by the gate-source voltage Ugs, and the higher the Ugs is, the larger the Id is.
Further, in the above-mentioned case,
the relation between the drain current and the drain-source voltage, when the IGBT is in the on state, the B value is extremely low because the PNP transistor is a wide base region transistor;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance, Id-output drain current.
Further, in the above-mentioned case,
the on-state current Ids can be represented by the following equation:
Ids＝(1+Bpnp)Imos
imos-current flowing through the MOSFET;
bpnp- -represents the on-state voltage;
because the N + region has a conductance modulation effect, the on-state voltage drop of the IGBT is small, and the on-state voltage drop of the IGBT with the withstand voltage of 1000V is 2-3V;
when the IGBT is in the off state, only a small leakage current exists.
Further, in the above-mentioned case,
the triggering and the turning-off of the IGBT need to add positive voltage and negative voltage between a grid electrode and a base electrode of the IGBT, and the grid electrode voltage can be generated by different driving circuits.
Further, in the above-mentioned case,
when the GBT is turned off, the waveform of the drain current is changed into two sections;
after the MOSFET is turned off, the stored charge of the PNP transistor is difficult to be quickly eliminated, resulting in a long tail time of the drain current, td (off) is the turn-off delay time, and trv is the rise time of the voltage uds (f).
Further, in the above-mentioned case,
the IGBT does not require a negative gate voltage to reduce turn-off time when turned off, but turn-off time increases with increasing gate and emitter parallel resistance.
The invention has the beneficial effects that: by arranging the current detector, the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip can be controlled to form a channel through the voltage of the grid electrode, the base current is provided for a PNP (originally NPN) transistor, the IGBT is conducted, the channel is eliminated through the voltage of the grid electrode, the base current is cut off, and further the damage of elements in the GBT is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an IGBT module according to the present embodiment;
in the figure: 1. a housing; 101. a waterproof layer; 2. a base plate; 3. a DCB plate; 4. thermal grease; 5. welding flux; 51. an IGBT chip; 6. a circuit board; 7. a gate electrode plate; 8. a first detector; 9. a second detector.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the case of the example 1, the following examples are given,
as shown in fig. 1, a control method based on an IGBT includes a DSP controller, an insulated gate bipolar transistor chip, a freewheeling diode chip, and a current detector;
the DSP controller is coupled to the current detector and is used for receiving the current signal and the control signal detected by the current detector;
one end of the insulated gate bipolar transistor chip is also coupled with a frequency converter, and one end of the flow diode chip is also coupled with an uninterruptible power supply;
when the IGBT is in a power-on state and the DSP controller is in a power-off state, an N-channel insulated gate bipolar transistor is formed, is an N + region, namely a drain region, is attached to a corresponding motor and is an emitter E, a gate G is formed on the controller below the N-channel insulated gate bipolar transistor, and a channel is formed at the boundary of a gate region and is used for providing base current for a PNP (original NPN) transistor to enable the IGBT to be conducted;
a current detector for detecting whether the current is too high is connected to the channel outlet at the boundary of the gate region;
the current detector is provided with a motor + N pole and a motor-N pole, wherein the + N pole is coupled with the insulated gate bipolar transistor chip, the motor-N pole is coupled with the insulated gate bipolar transistor chip, and the motor-N pole is coupled with the freewheeling diode chip to detect the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip.
In the case of the example 2, the following examples are given,
as shown in fig. 1, a method for implementing control based on an IGBT includes a DSP controller, an insulated gate bipolar transistor chip, a freewheeling diode chip, and a current detector;
the DSP controller is coupled to the current detector and is used for receiving the current signal and the control signal detected by the current detector;
one end of the insulated gate bipolar transistor chip is also coupled with a frequency converter, and one end of the flow diode chip is also coupled with an uninterrupted power supply and the like;
when the IGBT is in a power-on state and the DSP controller is in a power-off state, an N-channel insulated gate bipolar transistor is formed, is an N + region, namely a drain region, is attached to a corresponding motor and is an emitter E, a gate G is formed on the controller below the N-channel insulated gate bipolar transistor, and a channel is formed at the boundary of a gate region and is used for providing base current for a PNP (original NPN) transistor to enable the IGBT to be conducted;
a current detector for detecting whether the current is too high is connected to the channel outlet at the boundary of the gate region;
the current detector is provided with a motor + N pole and a motor-N pole, wherein the + N pole is coupled with the insulated gate bipolar transistor chip, the motor-N pole is coupled with the insulated gate bipolar transistor chip, and the motor-N pole is coupled with the freewheeling diode chip to detect the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip.
The collector C and the emitter E form a P-type region;
the P-type region comprises a P + region and a P-region, a sub-channel region is formed in the P + region and the P-region, the P + region on the other side of the drain region is a drain injection region, and a PNP bipolar transistor is formed together with the drain region and the sub-channel region and used for injecting holes into the drain electrode for conducting modulation and reducing the on-state voltage of the device.
When the current of the + N pole of the insulated gate bipolar transistor chip is too large, the reverse gate voltage eliminates a channel, the current of the base is cut off, and the IGBT is turned off;
the output drain current ratio is controlled by the gate-source voltage Ugs, and the higher the Ugs is, the larger the Id is.
In the case of the example 3, the following examples are given,
as shown in fig. 1, a control method based on an IGBT includes a DSP controller, an insulated gate bipolar transistor chip, a freewheeling diode chip, and a current detector;
the DSP controller is coupled to the current detector and is used for receiving the current signal and the control signal detected by the current detector;
one end of the insulated gate bipolar transistor chip is also coupled with a frequency converter, and one end of the flow diode chip is also coupled with an uninterrupted power supply and the like;
when the IGBT is in a power-on state and the DSP controller is in a power-off state, an N-channel insulated gate bipolar transistor is formed, is an N + region, namely a drain region, is attached to a corresponding motor and is an emitter E, a gate G is formed on the controller below the N-channel insulated gate bipolar transistor, and a channel is formed at the boundary of a gate region and is used for providing base current for a PNP (original NPN) transistor to enable the IGBT to be conducted;
a current detector for detecting whether the current is too high is connected to the channel outlet at the boundary of the gate region;
the current detector is provided with a motor + N pole and a motor-N pole, wherein the + N pole is coupled with the insulated gate bipolar transistor chip, the motor-N pole is coupled with the insulated gate bipolar transistor chip, and the motor-N pole is coupled with the freewheeling diode chip to detect the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip.
The collector C and the emitter E form a P-type region;
the P-type region comprises a P + region and a P-region, a sub-channel region is formed in the P + region and the P-region, the P + region on the other side of the drain region is a drain injection region, and a PNP bipolar transistor is formed together with the drain region and the sub-channel region and used for injecting holes into the drain electrode for conducting modulation and reducing the on-state voltage of the device.
When the current of the + N pole of the insulated gate bipolar transistor chip is too large, the reverse gate voltage eliminates a channel, the current of the base is cut off, and the IGBT is turned off;
the output drain current ratio is controlled by the gate-source voltage Ugs, and the higher the Ugs is, the larger the Id is.
The relation between drain current and drain-source voltage, when IGBT is in on-state, because its PNP transistor is wide base region transistor, its B value is extremely low;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance, Id-output drain current.
The on-state current Ids can be represented by the following equation:
Ids＝(1+Bpnp)Imos
imos-current flowing through the MOSFET;
bpnp- -represents the on-state voltage;
because the N + region has a conductance modulation effect, the on-state voltage drop of the IGBT is small, and the on-state voltage drop of the IGBT with the withstand voltage of 1000V is 2-3V;
when the IGBT is in the off state, only a small leakage current exists.
The triggering and the turning-off of the IGBT need to add positive voltage and negative voltage between a grid electrode and a base electrode of the IGBT, and the grid electrode voltage can be generated by different driving circuits.
When the GBT is turned off, the waveform of the drain current is changed into two sections;
after the MOSFET is turned off, the stored charge of the PNP transistor is difficult to be quickly eliminated, resulting in a long tail time of the drain current, td (off) is the turn-off delay time, and trv is the rise time of the voltage uds (f).
An IGBT does not require a negative gate voltage to reduce turn-off time when turned off, but turn-off time increases with increasing gate and emitter parallel resistance.
Dynamic characteristics
During the turn-on process of the IGBT, most of the time is used as the MOSFET to operate, only in the later period of the falling process of the drain-source voltage Uds, the PNP transistor is saturated from the amplifying region, a period of delay time is added, and td (on) is the turn-on delay time, and tri is the current rising time. The drain current on-time ton, which is usually given in practical applications, is the sum of td (on) tri. The fall time of the drain-source voltage consists of tfe1 and tfe 2.
The triggering and turning-off of an IGBT requires the application of positive and negative voltages between its gate and base, the gate voltages being generated by different driver circuits, which, when selected, must be based on the following parameters: device turn-off bias requirements, gate charge requirements, ruggedness requirements and power supply conditions, IGBT gate-emitter resistance is large and can be triggered using MOSFET drive technology, but because IGBT input capacitance is larger than MOSFET, the turn-off bias of IGBT should be higher than that provided by many MOSFET drive circuits.
In the turn-off process of the IGBT, the waveform of the drain current is changed into two segments, because after the MOSFET is turned off, the stored charge of the PNP transistor is difficult to be rapidly eliminated, resulting in a longer tail time of the drain current, td (off) is the turn-off delay time, trv is the rise time of the voltage uds (f), t (f1) and t (f2) of the fall time Tf of the drain current often given in practical application, and the turn-off time of the drain current
t(off)＝td(off)+trv+t(f)
In the formula, the sum of td (off) and trv is also called the storage time.
The switching speed of the IGBT is lower than that of the MOSFET, but is obviously higher than that of the GTR, negative gate voltage is not needed to reduce turn-off time when the IGBT is turned off, but the turn-off time is increased along with the increase of grid electrode and emitter electrode parallel resistance, the turn-on voltage of the IGBT is about 3-4V, the turn-on voltage is equivalent to that of the MOSFET, the saturation voltage drop when the IGBT is turned on is lower than that of the MOSFET and is close to that of the GTR, and the saturation voltage drop is reduced along with the increase.
In conclusion, the invention has the beneficial effects that: by arranging the current detector, the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip can be controlled to form a channel through the voltage of the grid electrode, the base current is provided for a PNP (originally NPN) transistor, the IGBT is conducted, the channel is eliminated through the voltage of the grid electrode, the base current is cut off, and further the damage of elements in the GBT is avoided.
In addition, the method for implementing control based on the IGBT provided by the embodiment of the present invention is described in detail above, and the principle and the embodiment of the present invention are explained in this document by applying specific examples, and the description of the above embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (8)
1. A method for realizing control based on IGBT is characterized in that: the device comprises a DSP controller, an insulated gate bipolar transistor chip, a freewheeling diode chip and a current detector;
the DSP controller is coupled to the current detector and is used for receiving a current signal and a control signal detected by the current detector;
one end of the insulated gate bipolar transistor chip is also coupled with a frequency converter, and one end of the flow diode chip is also coupled with an uninterruptible power supply;
when the IGBT is in a power-on state and the DSP controller is in a power-off state, an N-channel insulated gate bipolar transistor is formed, is an N + region, namely a drain region, is attached to a corresponding motor and is an emitter E, a gate G is formed on the controller below the N-channel insulated gate bipolar transistor, and a channel is formed at the boundary of a gate region and is used for providing base current for the PNP transistor to enable the IGBT to be conducted;
a current detector for detecting whether the current is too high is connected to the channel outlet at the boundary of the gate region;
the current detector is provided with a motor + N pole and a motor-N pole, wherein the + N pole is coupled with the insulated gate bipolar transistor chip, the motor-N pole is coupled with the insulated gate bipolar transistor chip, and the motor-N pole is coupled with the freewheeling diode chip to detect the current value flowing through the insulated gate bipolar transistor chip and the freewheeling diode chip.
2. The method for realizing control based on the IGBT according to claim 1, characterized in that:
the LED further comprises a collector C, and a P-type region is formed between the collector C and the emitter E;
the P-type region comprises a P + region and a P-region, sub-channel regions are formed in the P + region and the P-region, the P + region on the other side of the drain region is a drain injection region, and a PNP bipolar transistor is formed together with the drain region and the sub-channel regions and used for injecting holes into the drain electrode by an emitter electrode to conduct modulation, and the on-state voltage of the device is reduced.
3. The method for realizing control based on the IGBT according to claim 1, characterized in that:
the insulated gate bipolar transistor chip eliminates a channel through reverse gate voltage when the current of the + N pole is too large, cuts off the current of the base electrode and turns off the IGBT;
the output drain current ratio is controlled by the gate-source voltage Ugs, and the higher Ugs, the larger Id.
4. The IGBT-based control method of claim 3, characterized in that:
the relation between the drain current and the drain-source voltage, when the IGBT is in the on state, the B value is extremely low because the PNP transistor is a wide base region transistor;
the current flowing through the MOSFET becomes the main part of the total current of the IGBT;
the on-state voltage uds (on) can be represented by the following formula:
Uds(on)＝Uj1+Udr+IdRoh
in the formula, Uj1 is the forward voltage of JI junction, and the value is 0.7-1V; udr-voltage drop across spreading resistor Rdr; roh-channel resistance;
id- -output drain current.
5. The IGBT-based control method of claim 4, characterized in that:
the on-state current Ids can be represented by the following equation:
Ids＝(1+Bpnp)Imos
imos-current flowing through the MOSFET;
bpnp- -represents the on-state voltage;
because the N + region has a conductance modulation effect, the on-state voltage drop of the IGBT is small, and the on-state voltage drop of the IGBT with the withstand voltage of 1000V is 2-3V;
when the IGBT is in the off state, only a small leakage current exists.
6. The IGBT-based control method of claim 5, characterized in that:
the triggering and the turning-off of the IGBT need to add positive voltage and negative voltage between a grid electrode and a base electrode of the IGBT, and the grid electrode voltage can be generated by different driving circuits.
7. The IGBT-based control method of claim 6, characterized in that:
when the GBT is turned off, the waveform of the drain current is changed into two sections;
after the MOSFET is turned off, the stored charge of the PNP transistor is difficult to be quickly eliminated, resulting in a long tail time of the drain current, td (off) is the turn-off delay time, and trv is the rise time of the voltage uds (f).
8. The method for realizing control based on the IGBT according to claim 7, wherein:
the IGBT does not require a negative gate voltage to reduce turn-off time when turned off, but turn-off time increases with increasing gate and emitter parallel resistance.
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| CN204615634U (en) * | 2015-04-28 | 2015-09-02 | 深圳市禾望电气股份有限公司 | Insulated gate bipolar transistor is suppressed to turn off the circuit of spike |
| CN107026579A (en) * | 2016-01-29 | 2017-08-08 | 福特全球技术公司 | Dynamic I GBT gate drivers for reducing switching loss |
| CN207097830U (en) * | 2017-09-14 | 2018-03-13 | 四川广瑞半导体有限公司 | A kind of insulated gate bipolar transistor |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070279119A1 (en) * | 2006-04-20 | 2007-12-06 | C/O Fuji Electric Device Technology Co., Ltd. | Gate driving device for driving insulated gate bipolar transistor and method of driving the same |
| CN101393927A (en) * | 2008-10-31 | 2009-03-25 | 电子科技大学 | Accumulation layer controlled insulation gate type bipolar transistor |
| CN204615634U (en) * | 2015-04-28 | 2015-09-02 | 深圳市禾望电气股份有限公司 | Insulated gate bipolar transistor is suppressed to turn off the circuit of spike |
| CN107026579A (en) * | 2016-01-29 | 2017-08-08 | 福特全球技术公司 | Dynamic I GBT gate drivers for reducing switching loss |
| CN207097830U (en) * | 2017-09-14 | 2018-03-13 | 四川广瑞半导体有限公司 | A kind of insulated gate bipolar transistor |
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