CN110702744A - Special treatment device and sensing system for ship tail gas - Google Patents
Special treatment device and sensing system for ship tail gas Download PDFInfo
- Publication number
- CN110702744A CN110702744A CN201910986919.5A CN201910986919A CN110702744A CN 110702744 A CN110702744 A CN 110702744A CN 201910986919 A CN201910986919 A CN 201910986919A CN 110702744 A CN110702744 A CN 110702744A
- Authority
- CN
- China
- Prior art keywords
- gas
- tail gas
- ship
- treatment device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/21—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G30/00—Compounds of antimony
- C01G30/002—Compounds containing, besides antimony, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
- C03C17/256—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/661—Chalcogenides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
- C09K11/751—Chalcogenides
Abstract
The existing ship tail gas purification sensing device has the problems of high economic cost, poor reliability, difficult later maintenance and the like to a certain extent. The gas electrical property measurement is carried out by growing lead sulfide and lead antimony sulfur quantum dots on anatase titanium dioxide, the structure is simple, the occupied area of a diesel engine tail gas purification sensing system is greatly reduced, and the installation, later maintenance and replacement on a ship are more convenient. The manufacturing cost is low, the effect is obviously enhanced, and the overall efficiency and the operation reliability are greatly improved.
Description
Technical Field
The invention relates to the field of ship environmental protection, in particular to a special ship tail gas treatment device and a sensing system thereof.
Background
With the rapid growth of the marine industry, serious regional environmental air pollution is experienced at present, the health of coastal residents is influenced by the environmental pollution, and the air pollution problem becomes an urgent problem. If the healthy and durable development of the shipping industry in China is to be realized, the problem of air pollution caused by the shipping industry must be solved as soon as possible.
The ship emission is a main source of air pollution in port cities and inland river regions, the regional air quality is seriously influenced, and the serious negative influence is brought to the global air, the living environment of people and the body health. For the more adopted marine diesel engines, the commonly used fuel oil is poor fuel oil with high viscosity, high sulfur content and high carbon residue, and the tail gas discharged by ships contains various atmospheric pollutants harmful to human health, such as CO and SO2Hydrocarbons, oxygen compounds, particulates, and the like. However, the ship tail gas treatment device is complex and high in cost, so that a special treatment device for ship tail gas and a sensing system thereof are urgently needed to meet the actual needs.
Disclosure of Invention
Accordingly, in view of the disadvantages in the related art, examples of the present invention are provided to substantially solve one or more problems due to limitations and disadvantages of the related art, to substantially improve safety and reliability, and to effectively protect equipment.
According to the technical scheme provided by the invention, the invention discloses a special treatment device for ship tail gas, which comprises a Pb-S material product or a Pb-Sb-S material product, wherein the Pb-S material product or the Pb-Sb-S material product is prepared by the following preparation process:
firstly, cutting a substrate into required size, plating the interdigital electrode after cleaning and blow-drying, annealing the plated interdigital electrode at 150 ℃,
second, spin coating 30nm TiO2Annealing at 500 ℃ after twice;
thirdly, growing lead sulfide quantum dots or lead antimony sulfur quantum dots on titanium dioxide by using a continuous ion layer adsorption method;
fourthly, annealing at 300 ℃.
Further, the substrate is a glass slide, and is cleaned by cleaning solution, deionized water, acetone and ethanol, then is dried by a nitrogen gun, and the interdigital electrode is plated on the substrate by using a sputtering system.
Further, 0.1g of 30nm TiO was taken2And preparing TiO with absolute ethyl alcohol in a 1:1 mode2Spin coating the solution, uniformly stirring and shaking the solution, spin-coating the solution on a substrate at the rotation speed of 1700rpm for 10 seconds and 2000rpm for 20 seconds, repeating the steps twice, and annealing at 500 ℃.
Further, 0.05M Pb (NO3)2 and 0.1M Na2S ∙ 9H2O were prepared using deionized water and absolute methanol, stirred with a magnet, poured into a glass petri dish, and the spin-coated and annealed TiO was added2Soaking the substrate in Pb (NO3)2 solution for 30 seconds, taking out, cleaning with deionized water, baking on a heating plate, soaking in Na2S ∙ 9H2O solution for 30 seconds, taking out, cleaning with methanol, baking, soaking the substrate in the required layers, and annealing at 300 ℃ under nitrogen.
Further, 0.1M SbCl3 is prepared by using absolute ethyl alcohol, the mixture is stirred uniformly by using a magnet and poured into a glass culture dish, a spin-coated and annealed TiO2 substrate is soaked into a Pb (NO3)2 and Na2S ∙ 9H2O solution to synthesize PbS quantum dots, then the PbS quantum dots are soaked into 0.1M SbCl315 seconds, taken out, washed and baked by absolute ethyl alcohol, then soaked into a Na2S ∙ 9H2O60 second, taken out, washed and baked by absolute methyl alcohol, and finally soaked back into a SbCl3 solution, and then the solution is taken out, washed and baked, and then annealed at 300 ℃ under nitrogen.
Furthermore, the special treatment device for the tail gas of the ship body also comprises a copper base, the prepared Pb-S material product or Pb-Sb-S material product is adhered to a base plate of the copper base, an enameled wire is used as a bridge for connecting two ends, silver glue is used for fixing, and finally the base is adhered to a measuring area of the ship body.
The invention also discloses a gas sensing system, which comprises a gas measuring box, wherein a base and a gas detector are arranged in the gas measuring box, a sensing device is arranged on the base, the sensing device is the special processing device for the ship tail gas, the gas measuring box is powered by a power supply, the gas measuring box is also connected with a first ammeter and a second ammeter, the first ammeter is used for electrical measurement of the sensing device, the second ammeter is used for recording the dynamic concentration of the gas measuring box by using voltage, the gas measuring box is provided with a gas inlet and a gas outlet, the gas inlet is connected with a flow controller and an air pump, the flow controller is connected with a gas steel cylinder, and the gas sensing system also comprises a computer which can observe and record the change of numerical values.
The invention also discloses a ship body mechanism which is provided with the tail gas sensing equipment, wherein the tail gas sensing equipment comprises the special ship body tail gas treatment device.
The existing tail gas purification sensing device has the problems of high economic cost, poor reliability, difficult later maintenance and the like to a certain extent. The gas electrical property measurement is carried out by growing lead sulfide and lead antimony sulfur quantum dots on anatase titanium dioxide, the structure is simple, the occupied area of a diesel engine tail gas purification sensing system is greatly reduced, and the installation, later maintenance and replacement on a ship are more convenient. The manufacturing cost is low, the effect is obviously enhanced, and the overall efficiency and the operation reliability are greatly improved.
Drawings
FIG. 1 is a schematic view of the preparation process of the material of the present invention.
FIG. 2 shows TiO of the present invention2Schematic diagram of annealing parameters.
FIG. 3 is a schematic diagram of the synthesis of PbS according to the present invention.
FIG. 4 is a schematic diagram of the synthesis of PbSbs according to the present invention.
FIG. 5 is a schematic view of a substrate pedestal according to the present invention.
FIG. 6 is a schematic view of a gas sensing system according to the present invention.
FIG. 7 shows the carbon monoxide introduction to 30nm TiO in a dark room according to the present invention2The change of the resistance value is shown schematically.
FIG. 8 shows the introduction of carbon monoxide to TiO in a dark room according to the present invention2-a graph of the variation of PbS resistance.
FIG. 9 shows the introduction of carbon monoxide to TiO in a dark room according to the present invention2-Pb5Sb8S17The change of the resistance value is shown schematically.
Detailed Description
The present invention will be further described with reference to the following specific examples.
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
The application of the principles of the present invention will be further described with reference to the accompanying drawings and specific embodiments. In life, a lot of colorless and tasteless gases exist, and along with the rapid development of the ship industry, besides the gases in the original living environment, more gases harmful to human bodies are added. These harmful gases are not necessarily judged to be present by smell, and may cause some damage to the body when the human body is left in such an environment for a long time. The gas sensor is used for replacing human smell sense, so that the existence of harmful gas can be sensed at lower concentration, and the harmful gas is processed in real time, so that larger disasters are avoided.
Gas sensors have the ability to convert specific gases in the air into current, voltage and resistance, and are dynamically monitored and determined from received electrical signals, and are currently classified into a variety of types, such as electrochemical gas sensors, semiconductor gas sensors and contact combustion gas sensors. Sufficient stability, selectivity for different gases, rapid detection in a short time, and high sensitivity for different concentrations are all desirable for an ideal gas sensor.
As is well known, a semiconductor is a material with a conductivity between a conductor and an insulator, which is classified into p-type and n-type. The gases can be roughly divided into two types, namely oxidizing gases and reducing gases, and the absorption and desorption of materials can have different resistance changes according to the gases with different properties.
For p-type semiconductors, the main carriers are holes, and the oxidizing gas will take away electrons on the surface, so that the resistance is reduced when the hole concentration rises, in other words, the reducing gas gives more free electrons to the surface, so that the electron hole pairs are recombined, the hole concentration is reduced, and the resistance is increased. On the other hand, in an n-type semiconductor in which the main carriers are electrons, when surface free electrons are taken away by an oxidizing gas, the electron concentration decreases and the resistance value increases, and when more electrons are given by a reducing gas, the electron concentration increases and the resistance value decreases.
For better illustration, in the present invention, the main gas to be measured is the reducing gas carbon monoxide. Using a material to sense carbon monoxide, when carbon monoxide gas molecules adsorb to the surface of the material and give more electrons to the surface, the following formula is shown:
2CO + O2 -→2CO2+ e-
CO + O-→ CO + e-
CO + O2 -→ CO2+ 2e-
for n-type TiO2-Pb5Sb8S17When the desorption rate of the carbon monoxide molecules on the surface of the material is greater than the adsorption rate, the electron concentration is decreased, and the resistance value is increased to the initial background value.
O2+ e-→ O2 -
Under the condition of just letting in gas, the adsorption rate of the material to the gas can be greater than the desorption rate, and the resistance value at this moment can be rapidly reduced, but along with the increase of the gas letting in amount, the gas adsorption capacity on the surface of the material gradually reaches saturation, the adsorption rate tends to be slow, the resistance value also slowly reduces, and when the adsorption and desorption rates on the surface of the material are relative, the resistance value can reach a balanced state. In other words, after the gas is turned off, the gas concentration in the chamber begins to rise, the desorption rate is greater than the adsorption rate, and the resistance value will rise rapidly until the gas returns to the initial background value, and the resistance value will reach equilibrium.
The continuous ion layer adsorption reaction method (SILAR) has the characteristic of rapid synthesis, firstly, anion and cation solutions are respectively prepared, because the annealed titanium dioxide has negative polarity, the titanium dioxide is soaked in the cation solution to be combined with cations, then the redundant cations are cleaned, then the titanium dioxide is soaked in the anion solution, the cations attached to the surface of the titanium dioxide and the anions are reacted to obtain the required material, and the required material is taken out and then is cleaned in the same way to be more than the anions. In addition, different materials can be obtained by replacing different anion and cation solutions, and the expected number and size of the quantum dots can be obtained by controlling the soaking time and times.
The Pb-S material product or the Pb-Sb-S material product related by the invention is prepared by the following preparation process:
as shown in fig. 1, a substrate is cut into a proper size, cleaned and dried, then plated with an interdigital electrode, the plated interdigital electrode is annealed at 150 ℃ to make the atoms on the electrode more orderly arranged, and secondly, 30nm TiO2 is spin-coated twice and then annealed at 500 ℃ to make titanium dioxide into an anatase structure. And thirdly, growing lead sulfide or lead antimony sulfide quantum dots on titanium dioxide by using a continuous ion-sheath adsorption method (SILAR), and finally, annealing at 300 ℃ to complete the whole process.
Manufacturing interdigital electrode
The present invention uses a glass slide as the substrate because the TiO2 layer needs to be annealed at 500 c, which can cause substrate deformation if a thinner glass substrate is used. Cutting the substrate into proper size, cleaning with cleaning solution, deionized water, acetone and ethanol, and blow-drying with nitrogen gun. And finally, plating the interdigital electrode on the substrate by using a sputtering system. The sputtered electrode needs to be annealed to make the electrode contact with the substrate better.
Layer of TiO2
0.1g of TiO was taken2And preparing TiO with absolute ethyl alcohol in a 1:1 mode2Spin coating the solution, uniformly stirring and shaking the solution, spin-coating the solution on the substrate at a rotation speed of 1700rpm for 10 seconds and 2000rpm for 20 seconds, repeating the steps twice, and performing annealing at 500 ℃ (the annealing parameters are shown in fig. 2).
PbS quantum dot synthesis
As shown in FIG. 3, 0.05M Pb (NO3)2 and 0.1M Na2S ∙ 9H2O were prepared using deionized water and absolute methanol, stirred with a magnet, poured into a glass petri dish, and the spin-coated and annealed TiO was2Soaking the substrate in Pb (NO3)2 solution for 30 seconds, taking out, cleaning with deionized water, baking on a heating plate, soaking in Na2S ∙ 9H2O solution for 30 seconds, taking out, cleaning with methanol, baking, soaking the substrate in the required layers, and annealing at 300 ℃ under nitrogen.
PbSbS quantum dot synthesis
As shown in fig. 4, 0.1M SbCl3 was prepared using absolute ethanol, stirred uniformly with a magnet, poured into a glass petri dish, the spin-coated and annealed TiO2 substrate was soaked in a Pb (NO3)2 and Na2S ∙ 9H2O solution to synthesize PbS quantum dots, then soaked in 0.1M SbCl315 seconds, taken out, washed with absolute ethanol, baked, soaked in Na2S ∙ 9H2O60 seconds, taken out, washed with absolute methanol and baked to a desired number of layers, finally soaked back in SbCl3 solution, taken out, washed, baked, and then annealed at 300 ℃ under nitrogen.
Device forming
The prepared product is adhered to a copper base, an enameled wire is used as a bridge for connecting two ends, and then the enameled wire is fixed by silver colloid, as shown in the following figure 5, and finally the base is adhered to a measurement area.
Gas sensing system
The invention also discloses a gas sensing system, as shown in fig. 6, the gas sensing system comprises a gas measuring box, a base and a gas detector are arranged in the gas measuring box, a sensing device is arranged on the base, the sensing device is the processing device special for the ship tail gas, the gas measuring box is powered by a power supply, the gas measuring box is also connected with a first electric meter and a second electric meter, the first electric meter is used for electric measurement of the sensing device, the second electric meter records the dynamic concentration of the gas measuring box by using voltage, the gas measuring box is provided with a gas inlet and a gas outlet, the gas inlet is connected with a flow controller and an air pump, the flow controller is connected with a gas steel cylinder, the gas sensing system also comprises a computer, the computer is capable of observing changes in the recorded values.
Specifically, the use method of the gas sensing system is as follows:
the method comprises the steps of placing a special treatment device for the tail gas of the ship body on a base, driving a gas measurement box by using a power supply, opening the gas measurement box, heating the gas measurement box, simultaneously opening a flow controller, a first electric meter, a second electric meter and an air pump, taking the air pump as carrier air, discharging the carrier air flowing in the gas measurement box through an air outlet valve, opening a gas steel cylinder and controlling the flow of the gas by using the flow controller when the resistance value of the special treatment device for the tail gas of the ship body is stable under the flowing of the carrier air, sending the gas into the gas measurement box through an air inlet valve, carrying out dynamic gas concentration detection through a gas detector, sensing electric signals generated when the special treatment device for the tail gas of the ship body senses gases with different concentrations, observing and recording the electric signals through the electric meters and a computer, and closing gas inlets and outlets at two ends when the gas concentration does not rise, the inlet and the outlet are opened again until the electrical measurement of the special treatment device for the ship tail gas reaches a stable value, and the gas is sent out of the gas measurement box by using the carrier gas.
The following discussion discusses the electrical change of carbon monoxide detected by three materials in a darkroom, and the prepared materials are placed in the same space to be detected synchronously with the carbon monoxide detector, so as to achieve the purpose of dynamic monitoring. Different quantum dots are doped on titanium dioxide of an n-type semiconductor, and carbon monoxide is reduced gas to provide electrons on the surface of a sample, so that the main carrier is the electrons and the electrons given by the introduced gas, and the resistance value is reduced.
Fig. 7-9 show the change of resistance before and after carbon monoxide is introduced under the condition of 1V bias voltage in a dark room, respectively, and it is found that the resistance of n-type titanium dioxide starts to decrease until the saturated state resistance is leveled after carbon monoxide concentration is sensed, and the resistance gradually returns to the state before introduction as the concentration decreases due to carbon monoxide in the measurement region carried away by carrier air. FIG. 7 shows the resistance change of 30nmTiO2 before and after carbon monoxide introduction, the resistance value was 66 M.OMEGA.before introduction, the resistance value gradually decreased to 61.5 M.OMEGA.when the gas was saturated, and the resistance change rate of undoped titanium dioxide was 4.5 M.OMEGA.at a concentration of 200 ppm. Fig. 8 shows that when the lead sulfide quantum dots are doped, the resistance value is reduced from 175M Ω to 155M Ω under the environment of carbon monoxide concentration 55ppm, and the electrical property is significantly changed at a low concentration compared with the former. Fig. 9 shows that the resistance value of the doped Pb5Sb8S17 quantum dots decreased from 44M Ω to 35M Ω in an environment of 60ppm carbon monoxide, but the change was slightly worse than that of the doped PbS, but was about two times higher than that of the 250ppm undoped titanium dioxide at a low concentration.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (9)
1. The special treatment device for the tail gas of the ship body comprises a Pb-S material product or a Pb-Sb-S material product, and is characterized in that the Pb-S material product or the Pb-Sb-S material product is prepared by the following preparation process:
firstly, cutting a substrate into required size, plating the interdigital electrode after cleaning and blow-drying, annealing the plated interdigital electrode at 150 ℃,
second, spin coating 30nm TiO2Annealing at 500 ℃ after twice;
thirdly, growing lead sulfide quantum dots or lead antimony sulfur quantum dots on titanium dioxide by using a continuous ion layer adsorption method;
fourthly, annealing at 300 ℃.
2. The special treatment system for the tail gas of the ship body according to claim 1, wherein the substrate is a glass slide, and is dried by a nitrogen gun after being cleaned by cleaning solution, deionized water, acetone and ethanol, and the interdigital electrode is plated on the substrate by a sputtering system.
3. The device for treating the tail gas of the ship hull specially used according to the claim 1 or 2, characterized in that 0.1g of 30nm TiO is taken2And preparing TiO with absolute ethyl alcohol in a 1:1 mode2And spin-coating the solution on the substrate after uniformly stirring and shaking the solution, repeating the steps twice at the rotation speed of 1700rpm for 10 seconds and 2000rpm for 20 seconds, and annealing at 500 ℃.
4. The special ship tail gas treatment device as claimed in claim 1, wherein deionized water is usedMixing with anhydrous methanol to obtain 0.05M Pb (NO3)2 and 0.1M Na2S ∙ 9H2O, stirring with magnet, pouring into glass petri dish, and spin-coating and annealing TiO2The substrate was immersed in a Pb (NO3)2 solution for 30 seconds, taken out and washed with deionized water, baked on a hot plate, immersed in a Na2S ∙ 9H2O solution for 30 seconds, taken out and washed with methanol, baked, immersed in the desired number of layers, and then annealed at 300 ℃.
5. The device for treating tail gas of ship hull according to claim 1, wherein 0.1M SbCl3 is prepared by absolute ethyl alcohol, the mixture is stirred uniformly by a magnet and poured into a glass culture dish, the spun and annealed TiO2 substrate is soaked in a solution of Pb (NO3)2 and Na2S ∙ 9H2O to synthesize PbS quantum dots, then the PbS quantum dots are soaked in 0.1M SbCl315 seconds, taken out, washed by absolute ethyl alcohol, baked to dryness, then soaked in Na2S ∙ 9H2O60 seconds, taken out, washed by absolute methyl alcohol and baked to a required number of layers, finally soaked back in a SbCl3 solution, taken out, washed, baked to dryness, and then annealed at 300 ℃ under nitrogen.
6. The device for treating the tail gas of the ship hull according to claim 1, wherein the device for treating the tail gas of the ship hull further comprises a copper base, the prepared Pb-S material product or Pb-Sb-S material product is adhered to a base plate of the copper base, enameled wires are used as bridges for connecting two ends, the enameled wires are fixed by silver adhesive, and finally the base is adhered to a measuring area of the ship hull.
7. A gas sensing system, the gas sensing system includes the gas measuring box, the gas measuring box is equipped with the base and the gas detector, the base is equipped with the sensing device, the sensing device is the processing unit of any claim 1-6 specially used for the hull tail gas, the gas measuring box is provided with the power supply, the gas measuring box is also connected with the first ammeter and the second ammeter, wherein the first ammeter is used for the electrical measurement of the sensing device, the second ammeter uses the voltage to record the dynamic concentration of the gas measuring box, the gas measuring box is provided with the gas inlet and the gas outlet, the gas inlet is connected with the flow controller and the air pump, the flow controller is connected with the gas steel bottle, the gas sensing system also includes the computer, the computer is capable of observing changes in the recorded values.
8. A method of using a sensing system comprising the gas sensing system of claim 7, the method comprising:
the method comprises the steps of placing the special ship tail gas treatment device of any one of claims 1 to 6 on a base, driving the gas measurement box by using a power supply, starting the gas measurement box and performing heat engine, simultaneously starting the flow controller, the first electric meter, the second electric meter and the air pump, using the air pump as carrier air, enabling the carrier air to flow in the gas measurement box and then discharging the carrier air through the air outlet valve, starting the gas steel cylinder and controlling the inflow flow of gas by using the flow controller when the resistance value of the special ship tail gas treatment device of any one of claims 1 to 6 is stable under the flowing of the carrier air, sending the gas into the gas measurement box through the air inlet valve, performing dynamic gas concentration detection through the gas detector, and generating an electrical signal when the special ship tail gas treatment device of any one of claims 1 to 6 senses gases with different concentrations, observing and recording through an ammeter and a computer, when the gas concentration does not rise any more, closing the gas inlets and outlets at two ends simultaneously, keeping a fixed concentration in the gas measuring box until the electrical measurement of the device special for treating the tail gas of the ship body as claimed in any one of claims 1 to 6 reaches a stable value, opening the inlets and outlets again, and sending the gas out of the gas measuring box by using the carrier gas.
9. A ship hull structure, which is provided with an exhaust gas sensing device, characterized in that the exhaust gas sensing device comprises the special ship hull exhaust gas treatment device of any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910986919.5A CN110702744B (en) | 2019-10-17 | 2019-10-17 | Special treatment device and sensing system for ship tail gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910986919.5A CN110702744B (en) | 2019-10-17 | 2019-10-17 | Special treatment device and sensing system for ship tail gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110702744A true CN110702744A (en) | 2020-01-17 |
| CN110702744B CN110702744B (en) | 2020-06-19 |
Family
ID=69201281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910986919.5A Active CN110702744B (en) | 2019-10-17 | 2019-10-17 | Special treatment device and sensing system for ship tail gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110702744B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101429679A (en) * | 2008-11-25 | 2009-05-13 | 陕西科技大学 | Nano PbS film production method |
| RU2522735C1 (en) * | 2012-11-26 | 2014-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" | Electric sensor for hydrazine vapours |
| CN105981149A (en) * | 2014-02-06 | 2016-09-28 | 丰田自动车欧洲股份有限公司 | Process For Preparing Quantum Dot Array And Quantum Dot Superlattice |
| CN106442640A (en) * | 2015-08-06 | 2017-02-22 | 宏达国际电子股份有限公司 | Gas detection apparatus and gas detection method using gas detection apparatus |
| CN106814110A (en) * | 2017-01-05 | 2017-06-09 | 华中科技大学 | A kind of stretchable semiconductor resistance-type flexible gas sensor and preparation method thereof |
| CN107132254A (en) * | 2017-06-22 | 2017-09-05 | 云南大学 | A kind of high sensitivity CO gas sensitive material and preparation method and application |
| CN107402242A (en) * | 2017-08-01 | 2017-11-28 | 南京航空航天大学 | Surface modification titanium deoxid film gas sensor and preparation method thereof |
| CN107799316A (en) * | 2017-11-09 | 2018-03-13 | 合肥工业大学 | A kind of PbS quantum is sensitized TiO2The preparation method and applications of film |
| US9970914B1 (en) * | 2014-04-04 | 2018-05-15 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Gas sensors with contact pads |
| CN108269923A (en) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | A kind of quantum point probe and preparation method thereof |
| KR20190092046A (en) * | 2018-01-30 | 2019-08-07 | 연세대학교 산학협력단 | Zinc oxide quantumdot based gas detecting sensor and method for manufacturing the same and gas detecting system comprising the same |
-
2019
- 2019-10-17 CN CN201910986919.5A patent/CN110702744B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101429679A (en) * | 2008-11-25 | 2009-05-13 | 陕西科技大学 | Nano PbS film production method |
| RU2522735C1 (en) * | 2012-11-26 | 2014-07-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" | Electric sensor for hydrazine vapours |
| CN105981149A (en) * | 2014-02-06 | 2016-09-28 | 丰田自动车欧洲股份有限公司 | Process For Preparing Quantum Dot Array And Quantum Dot Superlattice |
| US9970914B1 (en) * | 2014-04-04 | 2018-05-15 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Gas sensors with contact pads |
| CN106442640A (en) * | 2015-08-06 | 2017-02-22 | 宏达国际电子股份有限公司 | Gas detection apparatus and gas detection method using gas detection apparatus |
| CN108269923A (en) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | A kind of quantum point probe and preparation method thereof |
| CN106814110A (en) * | 2017-01-05 | 2017-06-09 | 华中科技大学 | A kind of stretchable semiconductor resistance-type flexible gas sensor and preparation method thereof |
| CN107132254A (en) * | 2017-06-22 | 2017-09-05 | 云南大学 | A kind of high sensitivity CO gas sensitive material and preparation method and application |
| CN107402242A (en) * | 2017-08-01 | 2017-11-28 | 南京航空航天大学 | Surface modification titanium deoxid film gas sensor and preparation method thereof |
| CN107799316A (en) * | 2017-11-09 | 2018-03-13 | 合肥工业大学 | A kind of PbS quantum is sensitized TiO2The preparation method and applications of film |
| KR20190092046A (en) * | 2018-01-30 | 2019-08-07 | 연세대학교 산학협력단 | Zinc oxide quantumdot based gas detecting sensor and method for manufacturing the same and gas detecting system comprising the same |
Non-Patent Citations (2)
| Title |
|---|
| MUHAMMAD ABDUL BASIT, ET AL.: "Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer deposited ZnS interfacial layer for quantum dot-sensitized solar cells", 《MATERIALS CHEMISTRY AND PHYSICS》 * |
| YUELI LIU, ET AL: "Highly sensitive and selective ammonia gas sensors based on PbS quantum dots/TiO2 nanotube arrays at room temperature", 《SENSORS AND ACTUATORS B》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110702744B (en) | 2020-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yuan et al. | Detection and identification of volatile organic compounds based on temperature-modulated ZnO sensors | |
| WO2020093638A1 (en) | Preparation method for vanillin ratiometric electrochemical aptasensor based on nano-composite modified electrode | |
| Sun et al. | Novel Zn–M–O (M= Sn, Co) sensing electrodes for selective mixed potential CO/C3H8 sensors | |
| CN110412087B (en) | Isopropanol gas sensor based on nanocube material and preparation method thereof | |
| RU2464554C1 (en) | Gas sensor for detecting nitrogen and carbon oxides | |
| CN109828009B (en) | H based on metal oxide semiconductor thin film material2S gas sensor and preparation method thereof | |
| US6843900B2 (en) | Potentiometric NOx sensors based on yttria-stabilized zirconia with zeolite modified electrode | |
| US5670949A (en) | Carbon monoxide/hydrocarbon thin film sensor | |
| Galioglu et al. | Zeolite A coated Zn 1− X Cu XO MOS sensors for NO gas detection | |
| CN114839231B (en) | Anti-interference gas-sensitive coating for semiconductor combustible gas sensor and preparation method and application thereof | |
| CN110702744B (en) | Special treatment device and sensing system for ship tail gas | |
| CN106018549A (en) | Environment monitoring device capable of detecting gas at high reliability | |
| Kondratev et al. | Technologically feasible ZnO nanostructures for carbon monoxide gas sensing | |
| CN105842287B (en) | For detecting the nano material and gas sensor element of nitrogen dioxide | |
| JP4108990B2 (en) | Diagnostic system for ozonolysis catalyst and its operating method | |
| EA034557B1 (en) | Method of manufacturing chemoresistor based on nanostructures of zinc oxide by electrochemical method | |
| CN113049646A (en) | Based on Cu7S4Hydrogen sulfide sensor made of-CuO graded structure micro-flower sensitive material and preparation method thereof | |
| Moschogiannaki et al. | Effect of the deposition method and substrate on an ultra-stable CoV2O6 hydrogen gas sensor, operating at room temperature | |
| Spetz et al. | Technology and application opportunities for SiC-FET gas sensors | |
| CN205562457U (en) | Take electrochemistry gas concentration detection apparatus in wind channel | |
| CN207248668U (en) | Measure the chip of mercury vapour and be equipped with the sensor of the chip | |
| CN109183104B (en) | Cu @ CuO @ rGO @ PPy composite metal wire for mercury ion detection and preparation method thereof | |
| JP3124371B2 (en) | Hydrocarbon concentration measurement device | |
| CA2353759A1 (en) | Oxidizing catalysts, carbon monoxide sensor, and hydrogen sensor | |
| Song et al. | Facile synthesis of hierarchical CuO microspheres and their gas sensing properties for NOx at room temperature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |