CN110694639A - Preparation method of multi-interface magnetic heterojunction - Google Patents

Preparation method of multi-interface magnetic heterojunction Download PDF

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CN110694639A
CN110694639A CN201910982465.4A CN201910982465A CN110694639A CN 110694639 A CN110694639 A CN 110694639A CN 201910982465 A CN201910982465 A CN 201910982465A CN 110694639 A CN110694639 A CN 110694639A
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tin
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CN110694639B (en
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李宁
陈冠益
李�瑞
梁澜
余洋
颜蓓蓓
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Tianjin University
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    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
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    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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Abstract

The invention relates to a preparation method of a multi-interface magnetic heterojunction, in particular to a method for preparing a multi-interface magnetic heterojunction by utilizing an atomic layer deposition technology. The technical problem of easy recombination of photon-generated electron-hole pairs is solved by reasonably designing multiple interfaces in the heterojunction and increasing a charge carrier transfer way, and the problem of difficult recycling of the catalyst in the water treatment process is solved by depositing the magnetic shell photocatalyst. Subsequently, two catalysts, a and B, at least one of which has magnetic properties, are alternately deposited on the surface of the nano-core substrate using ALD technique and annealed. The prepared multi-interface magnetic heterojunction promotes the efficient separation and transfer of photon-generated carriers, is easy to recycle under the action of an external magnetic field, has remarkably enhanced photocatalytic activity, and has a ciprofloxacin pollutant solution (the initial concentration is 15mg/L) removal rate of more than 90% under the condition of 150W visible light for 30 min. After 5 times of cyclic catalytic degradation, the multi-interface heterojunction still shows higher catalytic stability.

Description

Preparation method of multi-interface magnetic heterojunction
Technical Field
The invention relates to a method for preparing a multi-interface magnetic heterojunction by utilizing an atomic layer deposition technology. In particular to a preparation method of a multi-interface magnetic heterojunction.
Background
In recent years, some emerging micropollutants (such as antibiotics, pesticides and endocrine disruptors) are frequently detected in water, and cause great risks to human health. The photocatalytic oxidation technology is considered as a green, environment-friendly and efficient water treatment technology and is widely concerned by students.
The research and development of the high-activity photocatalyst are the premise and the key for improving the photocatalytic degradation efficiency, and the photocatalyst is developed from an initial single component to a double-component and multi-component doping body at present, so that the catalytic efficiency under visible light is obviously improved. The traditional catalyst preparation method mainly comprises a hydrothermal method, an impregnation method and a sintering method, and researches show that the composite catalyst prepared by the method has the problems of uneven component distribution, poor stability and uncontrollable preparation process, is easy to form an electron-hole recombination center, and becomes a main bottleneck for limiting the further improvement of the photocatalytic efficiency.
The Atomic Layer Deposition (ALD) technique can uniformly deposit an active functional layer on the surface of a substrate with a high aspect ratio through alternating pulse reaction between gas precursors, and can accurately control the thickness of the active functional layer on a nanometer scale, thereby being a high-precision catalyst preparation technique. At present, ALD has been used for assisting in the construction of single interface heterojunctions, and the catalytic activity under visible light is obviously improved. Kim et al in g-C by ALD3N4ZnS quantum dot deposited on surface and preparation of ZnS/g-C3N4The type II heterojunction has higher photocatalytic degradation efficiency on methylene blue than that of g-C3N4Increased by 1.6 times (appl. surf. Sci.,2017,419, 159-164). Wang et al on TiO by ALD2Pt nano particles and TiO are uniformly deposited on the surface of the nano wire2The degradation efficiency of a Pt single interface heterojunction on rhodamine B is improved to 2.12 times before deposition (Nanotechnology,2015,26, 254002). However, only a single interface present in the catalyst is facing the photo-generated electronsThe efficiency of hole pair separation is to be further improved, the transfer path of the charge carriers is relatively single, and this is not favorable for the rapid formation of active species and the improvement of photocatalytic efficiency. In addition, most of the reported ALD shell layer photocatalysts are not easy to recycle, and the recycling cost is high.
Disclosure of Invention
The invention uses ALD technology to alternatively deposit two components A and B on the surface of a nanometer core substrate, at least one of which has magnetism, and the magnetic multi-interface heterojunction is obtained through annealing treatment; the specific preparation steps are as follows:
1) dispersing the nano-core substrate material in an ethanol solution to prepare a suspension with the concentration range of 6-30g/L, uniformly dripping the suspension in a clean glass ware, and drying in a vacuum drying oven at the low temperature of less than or equal to 60 ℃;
2) placing the dried nano manganese oxide substrate material into an ALD (atomic layer deposition) cavity, wherein the pressure of the cavity is set to be 10-300Pa, the temperature of the cavity is set to be 150-400 ℃, the heating temperature of the precursor is set to be 30-150 ℃, and the temperature of a pipeline for transporting the precursor is set to be 100-300 ℃;
3) the iron source or the tin source precursor is pulsed to the reaction cavity, after the iron source or the tin source precursor and the substrate sample are subjected to chemical adsorption reaction fully, nitrogen or argon is introduced into the reaction cavity, and the unadsorbed iron source or tin source precursor is discharged out of the cavity; then, an oxygen source precursor is pulsed to the deposition cavity, after the oxygen source precursor and an iron source or tin source precursor are fully reacted, nitrogen or argon is introduced into the reaction cavity, and unreacted oxygen source precursor and reaction byproducts are discharged out of the cavity through cleaning;
4) repeating the step 3) for 1-10 times to obtain an iron oxide or tin oxide deposition layer;
5) after the tin source or the iron source precursor and the substrate sample are subjected to chemical adsorption reaction fully, introducing nitrogen or argon into the reaction cavity, and discharging the unadsorbed tin source or iron source precursor out of the cavity; the method comprises the steps of (1) pulsing an oxygen source precursor to a deposition cavity, introducing nitrogen or argon into the reaction cavity after the oxygen source precursor is fully reacted with a tin source or an iron source precursor, and discharging unreacted oxygen source precursor and reaction byproducts out of the cavity through cleaning;
6) repeating the step 5) for 1-10 times to obtain a tin oxide or iron oxide deposition layer;
7) and (3) sequentially completing the steps 4) and 6) for 1 deposition cycle calculation, and repeating the steps 4) and 6) for 10-1000 times to obtain the multi-interface heterojunction with the core-shell structure.
In the step 3), an iron source or tin source precursor is pulsed to the reaction cavity, and the pulse and the waiting time are respectively set to be 20-80ms and 10-20 s.
In the step 3), the oxygen source precursor is pulsed to the deposition cavity, and the pulse and the waiting time are respectively set to be 20-80ms and 10-20 s.
In the step 5), a precursor of the tin source or the iron source is pulsed to the reaction cavity, and the pulse time and the waiting time are respectively set to be 20-80ms and 10-20 s.
In the step 5), the oxygen source precursor is pulsed to the deposition cavity, and the pulse and the waiting time are respectively set to be 20-80ms and 10-20 s.
The time for introducing nitrogen or argon into the reaction cavity is preferably 10-20 s.
The nano-core substrate material is preferably manganese oxide.
The metal source precursor is preferably an iron source or a tin source.
The invention has the advantages that: according to the multi-interface magnetic heterojunction, the atomic layer deposition technology is utilized to accurately design the multi-interface formed by different components, and efficient separation and transfer of photon-generated carriers are promoted. Secondly, the prepared multi-interface heterojunction is easy to recycle under the action of an external magnetic field by depositing the heterojunction component with the adjustable magnetic effect. The photocatalytic activity of the multi-interface magnetic heterojunction prepared by the method is remarkably enhanced, and the removal rate of ciprofloxacin pollutant solution (the initial concentration is 15mg/L) reaches over 90 percent under the condition of 150W visible light for 30 min. After 5 times of cyclic catalytic degradation, the multi-interface heterojunction still shows higher catalytic stability.
Drawings
FIG. 1 is a schematic structural diagram of a multi-interface heterojunction;
FIG. 2 is an SEM picture of a multi-interface heterojunction of embodiment 1;
FIG. 3 is the concentration change of the multi-interface heterojunction in the process of photocatalytic degradation of ciprofloxacin in example 1;
FIG. 4 is the change of the removal rate of ciprofloxacin catalytically degraded by the multi-interface heterojunction cycle in example 1.
Detailed Description
Example 1: the preparation method of the multi-interface magnetic heterojunction of the embodiment is carried out by the following steps:
1) mn is added3O4Dispersing the nano particles in an ethanol solution to prepare a suspension with the concentration of 6g/L, uniformly dripping the suspension in a clean glass ware, and drying in a vacuum drying oven at 50 ℃ to obtain uniformly dispersed Mn3O4A nanoparticle;
2) and drying the Mn3O4Placing nanoparticles into an ALD (atomic layer deposition) cavity, setting the pressure of the cavity to be 60-300Pa, the temperature of the cavity to be 150 ℃, the temperature of an oxygen source precursor to be 30 ℃, the temperature of an iron source precursor to be 120 ℃, the temperature of a tin source precursor to be 100 ℃ and the temperature of a pipeline for transporting the precursor to be 100 ℃;
3) and the iron source precursor is pulsed for 20ms and enters the ALD reaction cavity, and the waiting time is set to 10s, so that the full chemical adsorption reaction between the precursor and the substrate sample is ensured. Then introducing nitrogen into the reaction cavity for cleaning for 10s, and discharging the residual iron source precursor out of the cavity; the ozone oxygen source precursor is pulsed for 20ms, enters an ALD reaction cavity, reacts with a sample which is saturated with the adsorbed iron source precursor for 10s, then nitrogen is introduced into the reaction cavity again for cleaning for 10s, and the residual ozone oxygen source precursor and reaction byproducts are discharged from the cavity, so that the first layer of Fe is finished2O3Depositing;
4) repeating the step 3) for 1 time to obtain Fe2O3Depositing a layer;
5) and the precursor of the tin source is pulsed for 20ms and enters an ALD reaction cavity, and the waiting time is set to 10s, so that the chemical adsorption reaction between the precursor and the substrate sample is fully generated. Followed byIntroducing nitrogen into the reaction cavity for cleaning for 10s, and discharging the residual tin source precursor out of the cavity; the method comprises the steps of enabling a deionized water oxygen source precursor to enter an ALD reaction cavity after 20ms of pulse, enabling the deionized water oxygen source precursor to react with a sample which adsorbs tin source precursor to be saturated for 10s, then introducing nitrogen into the reaction cavity again to clean for 10s, discharging the rest of the deionized water oxygen source precursor and reaction byproducts out of the cavity, and thus finishing the first layer of SnO2Depositing;
6) repeating the step 5) for 1 time to obtain SnO2Depositing a layer;
7) and (3) carrying out deposition cycle calculation for 1 time by sequentially finishing the steps 4) and 6), and repeating the steps 4) and 6) for 500 times to obtain the multi-interface heterojunction with the core-shell structure.
The embodiment has the following beneficial effects:
first, Mn obtained in the present embodiment3O4@Fe2O3/SnO2The schematic structure of the multi-interface heterojunction is shown in fig. 1, and can provide more transfer paths for electrons and holes, thereby facilitating the efficient separation of electron-hole pairs;
second, Mn obtained in the present embodiment3O4@Fe2O3/SnO2The SEM picture of the multi-interface heterojunction is shown in figure 2, and the catalyst nanoparticles have no obvious accumulation phenomenon due to Fe2O3The multi-interface heterojunction is easy to recycle under the action of a magnetic field due to the existence of the magnetic component;
third, Mn obtained in the present embodiment3O4@Fe2O3/SnO2The multi-interface heterojunction has stronger photocatalytic activity. As shown in figure 3, after 30min of visible light irradiation of a 150W xenon lamp, the removal rate of the ciprofloxacin pollutant solution with the initial concentration of 15mg/L reaches 92 percent;
fourth, Mn obtained in the present embodiment3O4@Fe2O3/SnO2The multi-interface heterojunction has stronger catalytic stability. As shown in fig. 4, after 5 cycles of degradation experiments (same conditions as three), the removal rate of ciprofloxacin by the multi-interface heterojunction is reduced by only 3.6%.
Example 2: the preparation method of the multi-interface magnetic heterojunction of the embodiment is carried out by the following steps:
1) MnO prepared by a hydrothermal method in advance2Dispersing the nano particles in an ethanol solution, preparing a suspension with the concentration range of 30g/L, uniformly dripping the suspension in a clean glass ware, and drying in a vacuum drying oven at 40 ℃;
2) putting the dried sample into an ALD (atomic layer deposition) cavity, setting the pressure of the cavity to be 10-200Pa, the temperature of the cavity to be 400 ℃, the temperature of an oxygen source precursor to be 50 ℃, the temperature of an iron source precursor to be 120 ℃, the temperature of a tin source precursor to be 150 ℃ and the temperature of a pipeline for transporting the precursor to be 300 ℃;
3) and the precursor of the tin source is pulsed for 80ms and enters the ALD reaction cavity, and the waiting time is set to be 20s, so that the chemical adsorption reaction between the precursor and the substrate sample is fully generated. Then introducing argon gas into the reaction cavity for cleaning for 20s, and discharging the residual tin source precursor out of the cavity; the ozone precursor is pulsed for 80ms, enters an ALD reaction cavity, reacts with a sample which is saturated by absorbing the tin source precursor for 20s, then argon is introduced into the reaction cavity again to clean for 20s, the residual ozone precursor and reaction byproducts are discharged from the cavity, and thus the first layer of SnO is finished2Depositing;
4) repeating the step 3) for 10 times to obtain SnO2Depositing a layer;
5) and the iron source precursor is pulsed for 80ms and enters the ALD reaction cavity, and the waiting time is set to be 20s, so that the chemical adsorption reaction between the precursor and the substrate sample is fully generated. Then introducing argon gas into the reaction cavity for cleaning for 20s, and discharging the residual iron source precursor out of the cavity; the method comprises the steps of enabling a deionized water oxygen source precursor to enter an ALD reaction cavity after 80ms of pulse, enabling the deionized water oxygen source precursor to react with a sample which is saturated with an adsorbed iron source precursor for 20s, then introducing argon into the reaction cavity again to clean the reaction cavity for 20s, discharging the rest deionized water oxygen source precursor and reaction byproducts out of the cavity, and thus finishing the first layer of Fe2O3Depositing;
6) repeating the step 5) for 10 times to obtain Fe2O3Depositing a layer;
7) and (3) carrying out deposition cycle calculation for 1 time by sequentially finishing the steps 4) and 6), and repeating the steps 4) and 6) for 1000 times to obtain the multi-interface heterojunction with the core-shell structure.
The embodiment has the following beneficial effects:
first, MnO obtained in the present embodiment2@SnO2/Fe2O3The multi-interface heterojunction can provide more transfer paths for electrons and holes, is favorable for promoting the high-efficiency separation of electron-hole pairs and improves the photocatalytic activity. After 30min of visible light illumination by a 150W xenon lamp, the removal rate of ciprofloxacin pollutant solution with the initial concentration of 15mg/L reaches 95 percent;
second, MnO obtained in the present embodiment2@SnO2/Fe2O3The multi-interface heterojunction nano particles have no obvious accumulation phenomenon due to Fe2O3The multi-interface heterojunction is easy to recycle under the action of a magnetic field due to the existence of the magnetic component;
MnO obtained in the present embodiment2@SnO2/Fe2O3The multi-interface heterojunction has stronger catalytic stability. After 5 times of cyclic degradation experiments (the same condition), the removal rate of ciprofloxacin by the multi-interface heterojunction is only reduced by 2.8%.
Example 3: the preparation method of the multi-interface magnetic heterojunction of the embodiment is carried out by the following steps:
1) mn prepared by hydrothermal method in advance3O4Dispersing the nano particles in an ethanol solution, preparing a suspension with the concentration range of 10g/L, uniformly dripping the suspension in a clean glass ware, and drying in a vacuum drying oven at 45 ℃;
2) putting the dried sample into an ALD (atomic layer deposition) cavity, setting the pressure of the cavity to be 60-300Pa, the temperature of the cavity to be 300 ℃, the temperature of an oxygen source precursor to be 60 ℃, the temperature of an iron source precursor to be 120 ℃, the temperature of a tin source precursor to be 130 ℃, and the temperature of a pipeline for transporting the precursor to be 200 ℃;
3) the precursor of the tin source is pulsed for 60ms and enters an ALD reaction cavity, the waiting time is set to 15s, and the sufficient chemical generation between the precursor and the substrate sample is ensuredAnd (5) carrying out adsorption reaction. Then introducing nitrogen into the reaction cavity for cleaning for 15s, and discharging the residual tin source precursor out of the cavity; the ozone oxygen source precursor is pulsed for 60ms, enters an ALD reaction cavity, reacts with a sample which adsorbs the tin source precursor to saturation for 15s, then nitrogen is introduced into the reaction cavity again to clean for 15s, the residual ozone oxygen source precursor and reaction byproducts are discharged from the cavity, and thus the first layer of SnO is finished2Depositing;
4) repeating the step 3) for 5 times to obtain SnO2Depositing a layer;
5) and the iron source precursor is pulsed for 60ms and enters the ALD reaction cavity, and the waiting time is set to 15s, so that the full chemisorption reaction between the precursor and the substrate sample is ensured. Then introducing nitrogen into the reaction cavity for cleaning for 15s, and discharging the residual iron source precursor out of the cavity; the method comprises the steps of enabling a deionized water oxygen source precursor to enter an ALD reaction cavity after 60ms of pulse, enabling the deionized water oxygen source precursor to react with a sample which is saturated with an iron source precursor for 15s, then introducing nitrogen into the reaction cavity again to clean the reaction cavity for 15s, discharging the rest deionized water oxygen source precursor and reaction byproducts out of the cavity, and thus finishing the first layer of Fe2O3Depositing;
6) repeating the step 5) for 5 times to obtain Fe2O3Depositing a layer;
7) and (3) carrying out deposition cycle calculation for 1 time by sequentially finishing the steps 4) and 6), and repeating the steps 4) and 6) for 10 times to obtain the multi-interface heterojunction with the core-shell structure.
The embodiment has the following beneficial effects:
first, Mn obtained in the present embodiment3O4@SnO2/Fe2O3The multi-interface heterojunction can provide more transfer paths for electrons and holes, is favorable for promoting the high-efficiency separation of electron-hole pairs and improves the photocatalytic activity. After 30min of visible light illumination by a 150W xenon lamp, the removal rate of the ciprofloxacin pollutant solution with the initial concentration of 15mg/L reaches 93 percent;
second, Mn obtained in the present embodiment3O4@SnO2/Fe2O3The multi-interface heterojunction nano particles have no obvious accumulation phenomenon due to Fe2O3The multi-interface heterojunction is easy to recycle under the action of a magnetic field due to the existence of the magnetic component;
third, Mn obtained in the present embodiment3O4@SnO2/Fe2O3The multi-interface heterojunction has stronger catalytic stability. After 5 times of cyclic degradation experiments (the same condition), the removal rate of ciprofloxacin by the multi-interface heterojunction is only reduced by 3.1%.
While the methods and techniques of the present invention have been described in terms of preferred embodiments, it will be apparent to those of ordinary skill in the art that variations and/or modifications of the methods and techniques described herein may be made without departing from the spirit and scope of the invention. It is expressly intended that all such similar substitutes and modifications apparent to those skilled in the art are deemed to be within the spirit, scope and content of the invention.

Claims (8)

1. A preparation method of a multi-interface magnetic heterojunction is characterized by comprising the following steps:
1) dispersing the nano-core substrate material in an ethanol solution to prepare a suspension with the concentration range of 6-30g/L, uniformly dripping the suspension in a clean glass ware, and drying in a vacuum drying oven at the temperature of less than or equal to 60 ℃;
2) placing the dried nano manganese oxide substrate material into an ALD (atomic layer deposition) cavity, wherein the pressure of the cavity is set to be 10-300Pa, the temperature of the cavity is set to be 150-400 ℃, the heating temperature of the precursor is set to be 30-150 ℃, and the temperature of a pipeline for transporting the precursor is set to be 100-300 ℃;
3) the iron source or the tin source precursor is pulsed to the reaction cavity, after the iron source or the tin source precursor and the substrate sample are subjected to chemical adsorption reaction fully, nitrogen or argon is introduced into the reaction cavity, and the unadsorbed iron source or tin source precursor is discharged out of the cavity; then, an oxygen source precursor is pulsed to the deposition cavity, after the oxygen source precursor and an iron source or tin source precursor are fully reacted, nitrogen or argon is introduced into the reaction cavity, and unreacted oxygen source precursor and reaction byproducts are discharged out of the cavity through cleaning;
4) repeating the step 3) for 1-10 times to obtain an iron oxide or tin oxide deposition layer;
5) after the tin source or the iron source precursor and the substrate sample are subjected to chemical adsorption reaction fully, introducing nitrogen or argon into the reaction cavity, and discharging the unadsorbed tin source or iron source precursor out of the cavity; the method comprises the steps of (1) pulsing an oxygen source precursor to a deposition cavity, introducing nitrogen or argon into the reaction cavity after the oxygen source precursor is fully reacted with a tin source or an iron source precursor, and discharging unreacted oxygen source precursor and reaction byproducts out of the cavity through cleaning;
6) repeating the step 5) for 1-10 times to obtain a tin oxide or iron oxide deposition layer;
7) and (3) sequentially completing the steps 4) and 6) for 1 deposition cycle calculation, and repeating the steps 4) and 6) for 10-1000 times to obtain the multi-interface heterojunction with the core-shell structure.
2. The method as set forth in claim 1, wherein the iron source or tin source precursor is pulsed into the reaction chamber in the step 3), and the pulse and the waiting time are set to 20-80ms and 10-20s, respectively.
3. The method of claim 1, wherein in step 3) the oxygen source precursor is pulsed into the deposition chamber with pulse and wait times set to 20-80ms and 10-20s, respectively.
4. The method as set forth in claim 1, wherein the tin source or iron source precursor is pulsed into the reaction chamber in the step 5), and the pulse and the waiting time are set to 20-80ms and 10-20s, respectively.
5. The method according to claim 1, wherein the oxygen source precursor is pulsed into the deposition chamber in step 5), the pulse and the waiting time being set to 20-80ms and 10-20s, respectively.
6. The method of claim 1, wherein nitrogen or argon is introduced into the reaction chamber for 10-20 s.
7. The method of claim 1, wherein the nano-core substrate material is manganese oxide.
8. The method of claim 1, wherein the metal source precursor is an iron source or a tin source.
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