CN110038548A - A kind of preparation method of n-p-n type sandwich heterojunction nanometer material and products thereof and application - Google Patents
A kind of preparation method of n-p-n type sandwich heterojunction nanometer material and products thereof and application Download PDFInfo
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- CN110038548A CN110038548A CN201910389529.XA CN201910389529A CN110038548A CN 110038548 A CN110038548 A CN 110038548A CN 201910389529 A CN201910389529 A CN 201910389529A CN 110038548 A CN110038548 A CN 110038548A
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- 239000000463 material Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000002086 nanomaterial Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000009977 dual effect Effects 0.000 claims abstract description 7
- 238000007146 photocatalysis Methods 0.000 claims abstract description 4
- 230000001699 photocatalysis Effects 0.000 claims abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 14
- KVKFRMCSXWQSNT-UHFFFAOYSA-N n,n'-dimethylethane-1,2-diamine Chemical compound CNCCNC KVKFRMCSXWQSNT-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 5
- 230000006641 stabilisation Effects 0.000 abstract description 2
- 238000011105 stabilization Methods 0.000 abstract description 2
- 239000002070 nanowire Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000012621 metal-organic framework Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/14—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of germanium, tin or lead
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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Abstract
The present invention provides preparation method of a kind of n-p-n type sandwich heterojunction nanometer material and products thereof and application, utilizes technique for atomic layer deposition depositing p-type SnO nanometer layer on the n-type semiconductor surface nano material MOx, on this basis one layer of N-shaped SnO of redeposition2Shell structure, forms the dual hetero-junctions sandwich nanostructure of n-p-n type, and the dual heterojunction material of the n-p-n can be greatly improved the photoelectric properties and Photoelectrochemical stabilization of MOx sill, have a wide range of applications in the fields such as photocatalysis and air-sensitive.
Description
Technical field
The invention belongs to photoelectric semiconductor material fields, are related to a kind of n-p-n type sandwich heterojunction nanometer material, especially
It is to be related to the preparation and application of a kind of dual heterogeneous nano material of n-p-n, using technique for atomic layer deposition in n-type semiconductor nanometer
The surface material MOx deposits SnO and SnO2, to construct the excellent MOx/SnO/SnO of photoelectric properties2Sandwich heterojunction material.
Background technique
In optical electro-chemistry and catalytic field, with ZnO, TiO2And Ga2O3For representative N-shaped oxide semiconductor material because steady
Qualitative high, green non-poisonous, micro-structure is enriched, photoelectric properties are controllable etc., is widely used in the neck such as photocatalysis and air-sensitive, is always half
Hot spot in conducting oxide research.
In previous research, people regulate and control to adulterate the performance of the above-mentioned oxide semiconductor of different structure, are compound
Based on, by adulterating the element of different valence state, regulate and control its carrier concentration to regulate and control its photoelectric characteristic.But in its application process
In, the low separative efficiency of photo-generated carrier significantly impacts above-mentioned material and applies in fields such as photoelectricity, air-sensitives.Z-scheme is proposed
The separative efficiency of carrier is improved by hetero-junctions and enhances light absorption, this has important meaning to the promotion of photoelectrochemical behaviour
Justice, and emerged many work.By taking ZnO as an example, " Cellular heterojunctions fabricated through
the sulfurization of MOFs onto ZnO for high-efficient photoelectrochemical
In water oxidation ", proposes and hetero-junctions building is completed by the different MOF sulfide material of different loads,
(Applied Catalysis B:Environmental, 2018,
226(15), 421-428), “Au@CdS core-shell nanoparticles-modified ZnO
Nanowires photoanode for efficient Photoelectrochemical water Splitting " (Adv.
Sci. 2015,2,1500135) the middle cadmium sulfide particle completion hetero-junctions proposed by load containing noble metal constructs.
But in existing report still based on substance hetero-junctions, photoelectric properties are promoted limited.Especially preparing Schottky
The problems such as when hetero-junctions, needing to use the noble metals such as gold, palladium, while being faced with harsh preparation condition, repeatability difference, Wu Fayong
In large-scale production.
Hieu etc. prepares the dual hetero-junctions of n-p-n using carbon nanotube (can be divided into metallic character and characteristic of semiconductor), obtains
Obtaining being capable of significant increase NO2Gas-sensitive property structure, can realize lower than under 100 °C to low concentration of NO2Effective inspection
It surveys, but the repeatability of the mixing of carbon pipe and spraying process is very poor, greatly improves control difficulty."Superior enhancement
of NO2 gas response using n-p-n transition of carbon nanotubes/SnO2 nanowires
Heterojunctions " (Sensor Actuate B-Chem, 2016,238,1120-1127)
It is based on, the present invention provides a kind of preparation method of general n-p-n heterojunction nanometer material, utilizes atomic layer deposition skill
It is different to construct continuous p-n junction by way of regulating and controlling oxygen forerunner source using same metal front source in n-type semiconductor for art
Matter knot, to complete the preparation of n-p-n sandwich structure.Preparation process of the present invention is simple, and cost is controllable, and versatile, can
It is repeated high, it is suitable for scale and processes.It is constructed by n-p-n type hetero-junctions, N-shaped MO can be obviously improvedxThe light of semiconductor
Chemical property and stability.
Summary of the invention
For current material photoelectrochemical behaviour and the deficiency of stability, it is an object of that present invention to provide a kind of n-p-n types
The preparation method of sandwich heterojunction nanometer material.
Another object of the present invention is: providing a kind of n-p-n type sandwich hetero-junctions nanometer material of above method preparation
Expect product.
Another object of the present invention is to: a kind of application of the said goods is provided.
The object of the invention is realized by following proposal: a kind of preparation method of n-p-n type sandwich heterojunction nanometer material,
It is characterized in that, utilizing technique for atomic layer deposition depositing p-type SnO nanometer layer on the n-type semiconductor surface nano material MOx, herein
On the basis of one layer of N-shaped SnO of redeposition2Shell structure forms the dual hetero-junctions sandwich nanostructure of n-p-n type.
The MOx nano material includes but is not limited to ZnO, TiO2、Ga2O3 N-type semiconductor nano material.
Described utilizes technique for atomic layer deposition depositing p-type SnO nanometer layer, and forerunner source used is N, N'- dimethyl second
Diamines stannous and water, depositing temperature are controlled at 120-160 DEG C, and deposition thickness should be controlled in 10-50nm.
Described utilizes technique for atomic layer deposition depositing n-type SnO2Shell structure, forerunner source used are N, N'- dimethyl second
Diamines stannous and ozone, depositing temperature should be controlled at 120-160 DEG C, and deposition thickness is controlled in 5-20nm.
On the basis of above scheme, comprising the following steps:
(1) on the surface n-type semiconductor nano material MOx, with N, N'- dimethyl-ethylenediamine stannous and water are utilized as forerunner source
Technique for atomic layer deposition deposits 10-40nm p-type SnO nanometer layer at 120-160 DEG C；
(2) on the basis of the above, N is further used, N'- dimethyl-ethylenediamine stannous and ozone utilize atomic layer as forerunner source
Deposition technique deposits 5-20nm N-shaped SnO in 120-160 DEG C of section2Shell obtains required product.
The present invention provides a kind of n-p-n type sandwich heterojunction nanometer materials, are prepared according to any of the above-described the method
It obtains.
The present invention also provides a kind of n-p-n type sandwich heterojunction nanometer material answering in photocatalysis and air-sensitive field
With.
The present invention is on the surface n-type semiconductor nano material MOx, using technique for atomic layer deposition depositing p-type SnO nanometer layer,
One layer of N-shaped SnO of redeposition on this basis2Shell structure forms sandwich nanostructure, is conducive to improve carrier separation efficiency
And promote light absorption.
Detailed description of the invention
Fig. 1 is ZnO nano-wire/SnO/SnO in embodiment 12Heterojunction material is as photocathode in 0.6 VRHEBias and mould
I-t curve graph under quasi- sunlight intermittence illumination.
Specific embodiment
Embodiment 1
A kind of preparation method of n-p-n type sandwich heterojunction nanometer material utilizes on the n-type semiconductor surface nano material MOx
Technique for atomic layer deposition depositing p-type SnO nanometer layer, on this basis one layer of N-shaped SnO of redeposition2Shell structure forms n-p-n type
Dual hetero-junctions sandwich nanostructure, prepares according to the following steps:
(1) on ZnO nano-wire surface, with N, N'- dimethyl-ethylenediamine stannous and water utilize atomic layer deposition skill as forerunner source
Art deposits 20 nm p-type SnO nanometer layers at 150 DEG C；
(2) with N, N'- dimethyl-ethylenediamine stannous and ozone as forerunner source, using technique for atomic layer deposition, in 150 DEG C of sections
It is interior, deposit 5nm N-shaped SnO2Shell, form ZnO/SnO/SnO2Sandwich heterojunction nano-wire.
Fig. 1 is ZnO nano-wire/SnO/SnO in embodiment 12Heterojunction material is as photocathode in 0.6 VRHEBias and mould
I-t curve graph under quasi- sunlight intermittence illumination.
As seen from Figure 1, ZnO nano-wire/SnO/SnO2 hetero-junctions photocathode density of photocurrent is in simulated solar irradiation
According to lower highest close to 1.5mA/cm2, repeatedly rear stationary value is still greater than 1.1mA/ cm2, also do not decay after 300s, it was demonstrated that
Illustrate that prepared ZnO nano-wire/SnO/SnO2 heterojunction material has excellent Photoelectrochemical stabilization.
Embodiment 2
A kind of preparation method of n-p-n type sandwich heterojunction nanometer material, according to the following steps:
(1) in TiO2Nanotube surface, with N, N'- dimethyl-ethylenediamine stannous and water utilize atomic layer deposition as forerunner source
Technology deposits 10 nm p-type SnO nanometer layers at 160 DEG C；
(2) it with N, N'- dimethyl-ethylenediamine stannous and ozone as forerunner source, using technique for atomic layer deposition, at 160 DEG C, sinks
10 nm N-shaped SnO of product2Shell forms TiO2/SnO/SnO2Sandwich hetero-junctions nanotube.
Embodiment 3
A kind of preparation method of n-p-n type sandwich heterojunction nanometer material, comprising the following steps:
(1) in Ga2O3Nano grain surface, with N, N'- dimethyl-ethylenediamine stannous and water utilize atomic layer deposition as forerunner source
Product technology, in 120 DEG C of 40 nm p-type SnO nanometer layers of deposition；
(2) it is deposited using technique for atomic layer deposition at 120 DEG C with N, N'- dimethyl-ethylenediamine stannous and ozone as forerunner source
The N-shaped SnO of 10 nm2Shell forms Ga2O3/SnO/SnO2Sandwich hetero-junctions nano particle.
This hair can be understood and applied the above description of the embodiments is intended to facilitate those skilled in the art
It is bright.Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein
General Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to implementations here
Example, those skilled in the art's announcement according to the present invention, the improvement made for the present invention and modification all should be of the invention
Within protection scope.
Claims (6)
1. a kind of preparation method of n-p-n type sandwich heterojunction nanometer material, which is characterized in that in n-type semiconductor nanometer material
Expect that the surface MOx utilizes technique for atomic layer deposition depositing p-type SnO nanometer layer, on this basis one layer of N-shaped SnO of redeposition2Shell knot
Structure, formed the dual hetero-junctions sandwich nanostructure of n-p-n type, wherein the MOx nano material include but is not limited to ZnO,
TiO2、Ga2O3 N-type semiconductor nano material.
2. a kind of preparation method of n-p-n type sandwich heterojunction nanometer material according to claim 1, which is characterized in that
Described utilizes technique for atomic layer deposition depositing p-type SnO nanometer layer, and forerunner source used is N, N'- dimethyl-ethylenediamine stannous
And water, depositing temperature are controlled at 120-160 DEG C, deposition thickness should be controlled in 10-50nm.
3. a kind of preparation method of n-p-n type sandwich heterojunction nanometer material according to claim 1 or claim 2, feature exist
In described utilizes technique for atomic layer deposition depositing n-type SnO2Shell structure, forerunner source used are N, N'- dimethyl-ethylenediamine
Stannous and ozone, depositing temperature should be controlled at 120-160 DEG C, and deposition thickness is controlled in 5-20nm.
4. a kind of preparation method of n-p-n type sandwich heterojunction nanometer material according to claim 1 or claim 2, feature exist
In, comprising the following steps:
(1) on the surface n-type semiconductor nano material MOx, with N, N'- dimethyl-ethylenediamine stannous and water are utilized as forerunner source
Technique for atomic layer deposition deposits 10-40nm p-type SnO nanometer layer at 120-160 DEG C；
(2) with N, N'- dimethyl-ethylenediamine stannous and ozone as forerunner source, using technique for atomic layer deposition, at 120-160 DEG C
In section, 5-20nm N-shaped SnO is deposited2Shell obtains required product.
5. a kind of n-p-n type sandwich heterojunction nanometer material, it is characterised in that -4 any the method system according to claim 1
It is standby to obtain.
6. a kind of n-p-n type sandwich heterojunction nanometer material according to claim 5 is answered photocatalysis and air-sensitive field
With.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110694639A (en) * | 2019-10-16 | 2020-01-17 | 天津大学 | Preparation method of multi-interface magnetic heterojunction |
| CN112234110A (en) * | 2020-10-16 | 2021-01-15 | 重庆大学 | Sandwich-shaped PN junction and accurate construction method thereof |
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| CN110694639A (en) * | 2019-10-16 | 2020-01-17 | 天津大学 | Preparation method of multi-interface magnetic heterojunction |
| CN110694639B (en) * | 2019-10-16 | 2022-07-29 | 天津大学 | Preparation method of multi-interface magnetic heterojunction |
| CN112234110A (en) * | 2020-10-16 | 2021-01-15 | 重庆大学 | Sandwich-shaped PN junction and accurate construction method thereof |
| CN112234110B (en) * | 2020-10-16 | 2022-07-19 | 重庆大学 | Sandwich-shaped PN junction and accurate construction method thereof |
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