CN110690693A - High-voltage integrated chip, intelligent power module and air conditioner - Google Patents

High-voltage integrated chip, intelligent power module and air conditioner Download PDF

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Publication number
CN110690693A
CN110690693A CN201911171248.3A CN201911171248A CN110690693A CN 110690693 A CN110690693 A CN 110690693A CN 201911171248 A CN201911171248 A CN 201911171248A CN 110690693 A CN110690693 A CN 110690693A
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China
Prior art keywords
circuit
resistor
integrated chip
control signal
input
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CN201911171248.3A
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Chinese (zh)
Inventor
冯宇翔
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Midea Group Co Ltd
GD Midea Air Conditioning Equipment Co Ltd
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Midea Group Co Ltd
Guangdong Midea Refrigeration Equipment Co Ltd
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Priority to CN201911171248.3A priority Critical patent/CN110690693A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention discloses a high-voltage integrated chip, an intelligent power module and an air conditioner, wherein the high-voltage integrated chip comprises: a control signal input terminal, a power supply terminal and a ground terminal; a power driving circuit; the input end of the front-end input circuit is connected with the control signal input end, and the front-end input circuit is adaptively connected with the control signal/electrostatic voltage of the control signal input end; the input end of the static leakage circuit is connected with the front-end input circuit, one static leakage end of the static leakage circuit is connected with the power end, the other static leakage end of the static leakage circuit is connected with the grounding end, and the output end of the static leakage circuit is connected with the power driving circuit; the electrostatic discharge circuit discharges the electrostatic voltage when the front-end input circuit is the electrostatic voltage.

Description

High-voltage integrated chip, intelligent power module and air conditioner
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a high-voltage integrated chip, an intelligent power module and an air conditioner.
Background
The smart power modules usually work in a relatively 'harsh' environment (such as high voltage, large current, strong electromagnetic interference, frequent plugging and unplugging, high and low temperature working environment, etc.), so that the electrostatic protection design of the smart power modules needs to consider more factors. Static electricity can enter from the power supply end and the grounding end of the high-voltage integrated chip, and can also enter the chip through the signal pin of the high-voltage integrated chip. However, the area of the front-end circuit of the signal pin occupied by the chip is proportional to the high voltage resistance, and the requirements of the existing high voltage integrated chip on the electrostatic protection and the area of the chip cannot be met.
Disclosure of Invention
The invention mainly aims to provide a high-voltage integrated chip and electronic equipment, and aims to solve the problem that the area of the chip is larger due to the fact that the size of a front-end circuit of a control signal input end is in direct proportion to high-voltage resistance.
In order to achieve the above object, the present invention provides a high voltage integrated chip, which includes:
a control signal input terminal, a power supply terminal and a ground terminal;
a power driving circuit;
the input end of the front-end input circuit is connected with the control signal input end, and the front-end input circuit is adaptively connected with a control signal/electrostatic voltage of the control signal input end;
the input end of the electrostatic discharge circuit is connected with the front-end input circuit, one electrostatic discharge end of the electrostatic discharge circuit is connected with the power supply end, the other electrostatic discharge end of the electrostatic discharge circuit is connected with the grounding end, and the output end of the electrostatic discharge circuit is connected with the power driving circuit; the electrostatic discharge circuit discharges the electrostatic voltage when the front-end input circuit is the electrostatic voltage.
Optionally, the front-end input circuit includes a negative temperature coefficient resistor and a positive temperature coefficient resistor, and the negative temperature coefficient resistor and the positive temperature coefficient resistor are sequentially and serially connected between the control signal input end and the input end of the static electricity leakage circuit.
Optionally, the negative temperature coefficient resistance and the positive temperature coefficient resistance have similar temperature coefficients.
Optionally, the negative temperature coefficient resistor is a poly resistor;
the positive temperature coefficient resistor is a base resistor.
Optionally, the high voltage integrated chip further comprises a substrate;
the poly resistor is arranged on one surface of the substrate;
the base resistor is embedded in the substrate, and the position of the base resistor corresponds to the position of the poly resistor.
Optionally, the electrostatic discharge circuit includes a first diode and a first resistor, an anode of the first diode is interconnected with the front-end input circuit and one end of the first resistor, a cathode of the first diode is connected with the power supply terminal, and the other end of the first resistor is connected with the power driving circuit.
Optionally, the input electrostatic protection unit further includes a second diode, a cathode of the second diode is connected to the first resistor and a common terminal of the power driving circuit, and an anode of the second diode is grounded.
Optionally, the number of the control signal input terminals is multiple;
each control signal input end is correspondingly provided with one front end input circuit and one static leakage circuit.
The invention also provides an intelligent power module, which comprises an inverter power circuit and the high-voltage integrated chip;
and a power driving circuit in the high-voltage integrated chip is connected with the inverter power circuit.
The invention also provides an air conditioner, which comprises the high-voltage integrated chip;
and/or, include a smart power module as described above.
The high-voltage integrated chip of the invention self-adapts to the static voltage and the control signal through the front-end input circuit, and outputs the static voltage to the static leakage circuit for leakage when the static voltage is accessed; and when the high-voltage integrated chip works, the front-end input circuit works normally so that the front-end input circuit is connected with a control signal, and the control signal is output to the power driving circuit through the front-end input circuit and the static leakage circuit so as to drive the corresponding power device to work. The invention provides a circulation channel for static electricity by arranging the front-end input circuit, thereby solving the problem that the requirements of the existing high-voltage integrated chip on static protection and chip area cannot be met because the volume of the front-end circuit of the control signal input end is in direct proportion to the high-voltage resistance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a functional block diagram of an embodiment of a high voltage integrated chip according to the present invention;
FIG. 2 is a schematic circuit diagram of a high voltage integrated chip according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of an embodiment of a high voltage integrated chip applied to an intelligent power module according to the invention.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
10 Power driving circuit R22 Positive temperature coefficient resistor
20 Front-end input circuit D1 First diode
30 Electrostatic discharge circuit D2 Second diode
R21 Negative temperature coefficient resistor R1 A first resistor
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a high-voltage integrated chip.
The high-voltage integrated chip is a power driving circuit with under-voltage protection, logic control and other functions, combines power electronics and semiconductor technology, gradually replaces traditional discrete elements, and is increasingly applied to the driving field of IGBT and high-power MOSFET. Electrostatic discharge (ESD) phenomenon is one of the most major reliability issues that cause integrated circuit products to fail. Various levels of electrostatic discharge events occur during the manufacture, packaging, testing, shipping, etc. of integrated circuit chips. When the integrated circuit is discharged, an equivalent high voltage of hundreds of even thousands of volts is generated, which can break down a gate oxide layer of an input stage in the integrated circuit, so that the integrated circuit is damaged. Particularly, with the scaling down of the transistor size in an integrated circuit, the thickness of a gate oxide layer of an input stage is thinner and thinner, the area scale of a chip is larger and larger, and the current and the voltage which can be borne by an MOS transistor are smaller and smaller, so that the MOS transistor is more easily damaged by the influence of external electrostatic charges. Therefore, improving the reliability of the integrated circuit against the electrostatic discharge protection is an important step to be considered in the design of the high-voltage integrated chip.
Since many power integrated circuits often work in a "harsh" environment (such as high voltage, large current, strong electromagnetic interference, frequent plugging and unplugging, and high and low temperature working environments), more factors need to be considered in their esd protection design. Static electricity can enter from the power supply end and the grounding end of the high-voltage integrated chip, and can also enter the chip through the signal pin of the high-voltage integrated chip. However, the area of the front-end circuit of the control signal input end in the chip is proportional to the high voltage resistance, and the requirements of the existing high voltage integrated chip on the electrostatic protection and the area of the chip cannot be met.
Referring to fig. 1, in an embodiment of the present invention, the high voltage integrated chip includes:
a control signal input terminal Vin;
a power drive circuit 10;
the input end of the front-end input circuit 20 is connected with the control signal input end Vin, and the front-end input circuit 20 is adaptively connected to the control signal/electrostatic voltage of the control signal input end Vin;
an electrostatic discharge circuit 30, an input end of the electrostatic discharge circuit 30 is connected to the front-end input circuit 20, two electrostatic discharge ends of the electrostatic discharge circuit 30 are connected to the power end and the ground end in a one-to-one manner, and an output end of the electrostatic discharge circuit 30 is connected to the power driving circuit 10; the electrostatic discharge circuit 30 discharges the electrostatic voltage when the front-end input circuit 20 is the electrostatic voltage.
In this embodiment, the power driving circuit 10 may integrate four or six driving circuits of power devices, and may be specifically configured integrally according to the number of driving devices. The power driving circuit 10 includes a high-voltage side driving circuit and a low-voltage side driving circuit, and in practical application, a three-phase high-voltage side driving unit of the high-voltage side driving circuit may be integrated in a high-voltage integrated chip HVIC. Or, the three-phase high-voltage side driving unit of the high-voltage side driving circuit and the three-phase low-voltage side driving circuit of the low-voltage side driving circuit are integrated on the HVIC. Or, each phase high-voltage side driving unit in the three-phase high-voltage side driving units and one phase high-voltage side driving unit in the three-phase low-voltage side driving units are integrated in an HVIC, for example, the U-phase high-voltage side driving unit and the U-phase high-voltage side driving unit are integrated in an HVIC, and the specific arrangement mode may be different according to the internal structure mode of the intelligent power module, and is not limited herein.
The high-voltage integrated chip also comprises a power supply end and a grounding end; the electrostatic discharge circuit 30 has two electrostatic discharge ends, one of which is connected to the power end, and the other of which is connected to the ground end. The electrostatic discharge circuit 30 is provided with two discharge flow paths, and two discharge ends of the electrostatic discharge circuit 30 are connected between the power end and the ground end to provide a discharge path for the electrostatic current when detecting the electrostatic voltage. That is, when the input control signal input terminal Vin is connected with the electrostatic voltage, the electrostatic discharge circuit 30 outputs the electrostatic voltage to the electrostatic discharge circuit 30 through the front-end input circuit 20, and then outputs the electrostatic voltage to the power supply or the ground, so as to discharge the electrostatic voltage. When the high voltage ic chip operates normally, when it is detected that the control signal is input, the electrostatic discharge circuit 30 outputs the control signal to the power driving circuit 10.
The front-end input Circuit 20 and the electrostatic discharge Circuit 30 may form an electrostatic protection Circuit to protect a main Circuit module in an HVIC (high voltage Integrated Circuit), where the main Circuit module in the HVIC, i.e. a Circuit unit to be protected, generally includes a power driving Circuit 10 with functions of under-voltage protection, logic control, and the like. When the circuit unit to be protected is subjected to high voltage, large current, strong electromagnetic interference, frequent plugging and unplugging and high and low temperature working environments, static electricity is easily generated. At this time, by adding the front-end input circuit 20 and the electrostatic discharge circuit 30 to the input terminal VIN of the power driving circuit 10, the surge impact generated by the circuit to be protected by the static electricity can be effectively resisted.
Specifically, when the high voltage ic is not in operation, such as during manufacturing, packaging, standby or testing, if an electrostatic voltage is applied to the output terminal of the high voltage ic at this time, the front-end input circuit 20 adapts to the electrostatic current, and the electrostatic current is absorbed by the power line of the power source terminal or the ground line of the ground terminal after flowing through the front-end input circuit 20 and the electrostatic discharge circuit 30, and does not flow into the power driving circuit 10. When the high voltage ic chip is in normal operation, the front end input circuit 20 is in normal operation, and when the control signal input terminal Vin receives a control signal, the control signal is output to the power driving circuit 10 through the control signal input circuit and the electrostatic discharge circuit 30.
The high-voltage integrated chip of the invention self-adapts to the static voltage and the control signal through the front-end input circuit 20, and outputs the static voltage to the static leakage circuit 30 for leakage when the static voltage is accessed; and when the high-voltage integrated chip works, the front-end input circuit 20 works normally, so that the front-end input circuit 20 is connected with a control signal, and the control signal is output to the power driving circuit 10 through the front-end input circuit 20 and the electrostatic discharge circuit 30 to drive the corresponding power device to work. The invention provides a circulation channel for static electricity by arranging the front-end input circuit 20, thereby solving the problem that the requirements of the existing high-voltage integrated chip on static protection and chip area cannot be met because the volume of the front-end circuit of the control signal input end Vin is in direct proportion to the high-voltage resistance.
In an embodiment, the front-end input circuit 20 includes a negative temperature coefficient resistor R21 and a positive temperature coefficient resistor R22, and the negative temperature coefficient resistor R21 and the positive temperature coefficient resistor R22 are sequentially and serially disposed between the control signal input terminal Vin and the input terminal of the electrostatic discharge circuit 30.
The negative temperature coefficient resistor R21 and the positive temperature coefficient resistor R22 have similar temperature coefficients.
The negative temperature coefficient resistor R21 is a poly resistor;
the positive temperature coefficient resistor R22 is a base resistor.
In this embodiment, according to the relationship between the thermistor and the temperature, the resistance RT at the temperature T is:
Figure BDA0002287820900000061
wherein RN is the resistance value at the rated temperature TN; TN is the specified temperature; b is the heat sensitivity index. The temperature coefficients of the various different Poly resistors differ, with lightly doped Poly resistors exhibiting a negative temperature coefficient and heavily doped Poly resistors assuming a positive temperature coefficient. Poly resistance is a negative temperature coefficient, with resistance decreasing with increasing temperature; the base resistance is a positive temperature coefficient, and as the temperature increases, the resistance becomes larger. That is, in the present embodiment, the negative temperature coefficient resistor R21 is a poly resistor, and the positive temperature coefficient resistor R22 is a base resistor. By adjusting the doping concentration, the absolute values of the temperature coefficients of the poly resistor and the base resistor are close, one is positive and the other is negative. When the high-voltage integrated chip works, the temperature of the chip rises, the temperature changes of the two resistors are just offset with each other, the total resistance is constant, and the problem of temperature drift of the high-voltage integrated chip can be solved. The poly resistor and the base resistor can be used for voltage stabilization and filtering, and meanwhile, the poly resistor and the base resistor are arranged in series, so that the resistance of the front-end circuit can be increased, and the static resistance of the poly resistor is improved. According to the resistance characteristics, in order to satisfy the requirement of passing a large current when ESD occurs, the poly resistor has a sufficient width (length), which inevitably occupies a large area on the layout of the high-voltage integrated chip. When each control signal input end Vin of the HVIC is provided with the electrostatic protection circuit, a plurality of electrostatic protection circuits exist in the HVIC, and the multiple resistors are added to make the layout larger, so that the development of the high-voltage integrated chip towards light weight and miniaturization is not facilitated, and the manufacturing cost of the high-voltage integrated chip is easily increased due to the large layout. Therefore, in the embodiment, the base resistor is arranged in series on the front-end circuit of the poly resistor, so that the electrostatic current can be output from the poly resistor and the base resistor, voltage division is performed through the base resistor and the poly resistor, the area of the poly resistor is not required to be increased due to high voltage resistance, the electrostatic protection capability can be ensured, the area of the HVIC layout is reduced, and the power density of the intelligent power module is improved. When the static current exists, the static current can flow out from the poly resistor and the base resistor without increasing the poly resistor, so the area of the poly resistor is not required to be increased. When the high-voltage integrated chip normally works, the poly resistor has better stability, so that the working stability of the module can be ensured, and the generation of interference is avoided.
In one embodiment, the high voltage integrated chip further comprises a substrate (not shown);
the poly resistor is arranged on one surface of the substrate;
the base resistor is embedded in the substrate, and the position of the base resistor corresponds to the position of the poly resistor.
In this embodiment, in the manufacturing process of the high voltage integrated chip, the poly resistor may be disposed on a surface of the substrate of the high voltage integrated chip, and the base resistor may be embedded in the substrate. In layout design, the base resistor is arranged on the substrate layer and is positioned below the poly resistor, and the base resistor and the poly resistor are connected in series, so that the area of the poly resistor can be greatly reduced. By the arrangement, the area of the poly resistor does not need to be increased, and the base resistor does not occupy the surface area of the substrate, so that the area of the substrate increased by increasing the area of the poly resistor can be reduced.
In one embodiment, the electrostatic discharge circuit 30 includes a first diode D1 and a first resistor R1, an anode of the first diode D1 is interconnected with the front-end input circuit 20 and one end of the first resistor R1, a cathode of the first diode D1 is connected with the power source terminal, and the other end of the first resistor R1 is connected with the power driving circuit 10.
The input esd protection unit further includes a second diode D2, a cathode of the second diode D2 is connected to the first resistor R1 and the common terminal of the power driving circuit 10, and an anode of the second diode D2 is grounded.
In this embodiment, the first diode D1 and the second diode D2 form two electrostatic discharge paths, wherein the second diode D2 may be implemented by a zener diode, and the second diode D2 may clamp the input electrostatic voltage, so as to prevent the electrostatic current from flowing into the power driving circuit 10. When there is no electrostatic surge, the cathode voltage of the first diode D1 is higher than the anode voltage, and the second diode D2 is lower than the reverse breakdown voltage thereof, so that the first diode D1 and the second diode D2 are both in the cut-off state, when the static electricity enters the control signal input circuit from the control signal input terminal Vin, the static current in the forward direction is discharged through the first diode D1, and the static current in the reverse direction is discharged through the second diode D2; thereby preventing electrostatic current from entering the circuit to be protected. The second diode D2 can clamp the signal input end better, so that the electrostatic protection performance of the circuit to be protected is improved; the probability of LATCH-UP (LATCH-UP) phenomenon of the circuit to be protected is reduced, and the electrostatic protection capability of the whole circuit is improved.
Of course, in other embodiments, the first diode D1 and the second diode D2 may be implemented by a discharge tube such as a triode, a MOS transistor, or a thyristor, and when the control signal input terminal Vin generates static electricity, one of the voltage/current is turned on by the suddenly increased voltage/current, so as to form a discharge path to ground. It will be appreciated by those skilled in the art that the circuit connections will be different when the vent tube is a different device as described above.
In one embodiment, the number of the control signal input terminals Vin is plural;
each of the control signal input terminals Vin is provided with one of the front-end input circuits 20 and one of the electrostatic discharge circuits 30.
It can be understood that, in the high voltage integrated chip, there are a plurality of control signal input terminals Vin, and for each control signal input terminal Vin, one front end switch circuit 20 and one electrostatic discharge circuit 30 may be correspondingly disposed, in this embodiment, six control signal input terminals are taken as an example for explanation, correspondingly, six front end input circuits 20 and six electrostatic discharge circuits 30 constitute flow path electrostatic protection circuits (ESD 1-ESD 6), so that when any one control signal input terminal Vin has static electricity, the front end input circuit 20 provides a flow path for the static electricity, thereby solving the problem that the volume of the front end circuit of the control signal input terminal Vin is directly proportional to the high voltage resistance, and the requirement of the existing high voltage integrated chip on the electrostatic protection and the area of the chip cannot be met.
In another embodiment, the esd protection circuit formed by the front-end input circuit 20 and the esd relief circuit 30 may be cascaded in sequence, or may be connected in series or in parallel with an integrated circuit of another function. Because each control signal input end Vin of the circuit with the electrostatic protection function in the scheme has the electrostatic protection function, when the circuit with the electrostatic protection function is subjected to irreversible electrostatic damage, electrostatic protection can be formed on the next stage of circuit.
The invention further provides an intelligent power module, which includes the high-voltage integrated chip with the electrostatic protection function, and the specific structure of the high-voltage integrated chip with the electrostatic protection function refers to the above embodiments. And the power supply end and the grounding end of the high-voltage integrated chip correspond to the power supply end and the grounding end of the intelligent power module. Therefore, the high-voltage integrated chip with the electrostatic protection function can effectively protect the static electricity from the power supply end and the grounding end of the intelligent power module, thereby providing global protection for the intelligent power module.
The intelligent power module comprises an HVIC (high voltage integrated circuit) 101 and a three-phase inverter circuit, and the three-phase inverter bridge circuit 10 comprises a three-phase upper bridge arm power tube and a three-phase lower bridge arm power tube. The three-phase upper bridge arm power tube and the three-phase lower bridge arm power tube can be realized by selectively adopting switching tubes such as MOS tubes, IGBT tubes and the like.
A VCC end of the HVIC tube 101 is used as a positive end VDD of a low-voltage power supply of the intelligent power module 100, and the VDD is generally 15V; the HIN1 end of the HVIC pipe 101 is used as the U-phase upper bridge arm input end UHIN of the intelligent power module 100; the HIN2 end of the HVIC pipe 101 is used as the V-phase upper bridge arm input end VHIN of the intelligent power module 100; the HIN3 end of the HVIC pipe 101 is used as the W-phase upper bridge arm input end WHIN of the intelligent power module 100; the LIN1 end of the HVIC tube 101 is used as the U-phase lower bridge arm input end ULIN of the intelligent power module 100; the LIN2 end of the HVIC tube 101 is used as the V-phase lower bridge arm input end VLIN of the intelligent power module 100; the LIN3 end of the HVIC tube 101 is used as the W-phase lower bridge arm input end WLIN of the intelligent power module 100; here, the U, V, W three-phase six-path input of the intelligent power module 100 receives 0-5V input signals; the GND terminal of the HVIC tube 101 is used as the negative terminal COM of the low-voltage power supply of the intelligent power module 100; the VB1 end of the HVIC pipe 101 is used as a U-phase high-voltage area power supply positive end UVB of the intelligent power module 100; the HO1 end of the HVIC tube 101 is connected with the grid electrode of the U-phase upper bridge arm IGBT tube 121; the VS1 end of the HVIC 101 is connected with the emitter of the IGBT tube 121, the anode of the FRD tube 111, the collector of the U-phase lower bridge arm IGBT tube 124 and the cathode of the FRD tube 114, and serves as the negative end UVS of the U-phase high-voltage area power supply of the intelligent power module 100; the VB2 end of the HVIC pipe 101 is used as a power supply positive end VVB of a U-phase high-voltage area power supply of the intelligent power module 100; the HO3 end of the HVIC tube 101 is connected with the grid of the V-phase upper bridge arm IGBT tube 123; the VS2 end of the HVIC tube 101 is connected to the emitter of the IGBT tube 122, the anode of the FRD tube 112, the collector of the V-phase lower bridge arm IGBT tube 125, and the cathode of the FRD tube 115, and serves as the negative end VVS of the W-phase high voltage area power supply of the intelligent power module 100; the VB3 end of the HVIC pipe 101 is used as a W-phase high-voltage area power supply positive end WVB of the intelligent power module 100; the HO3 end of the HVIC tube 101 is connected with the grid of the W-phase upper bridge arm IGBT tube 123;
the VS3 end of the HVIC 101 is connected with the emitter of the IGBT tube 123, the anode of the FRD tube 113, the collector of the W-phase lower bridge arm IGBT tube 126 and the cathode of the FRD tube 116, and is used as the negative end WVS of the W-phase high-voltage area power supply of the intelligent power module 100;
the LO1 end of the HVIC tube 101 is connected with the grid electrode of the IGBT tube 124;
the LO2 end of the HVIC tube 101 is connected with the grid electrode of the IGBT tube 125;
the LO3 end of the HVIC tube 101 is connected with the grid electrode of the IGBT tube 126;
the emitter of the IGBT tube 124 is connected to the anode of the FRD tube 114, and serves as a U-phase low-voltage reference end UN of the smart power module 100;
the emitter of the IGBT tube 125 is connected to the anode of the FRD tube 115, and serves as a V-phase low-voltage reference terminal VN of the intelligent power module 100;
the emitter of the IGBT tube 126 is connected to the anode of the FRD tube 116, and serves as a W-phase low-voltage reference terminal WN of the intelligent power module 100;
the collector of the IGBT tube 121, the cathode of the FRD tube 111, the collector of the IGBT tube 122, the cathode of the FRD tube 112, the collector of the IGBT tube 123, and the cathode of the FRD tube 113 are connected to each other, and serve as a high voltage input terminal P of the smart power module 100, where P is generally connected to 300V.
The HVIC tube 101 functions to:
and respectively transmitting the 0-5V logic signals of input terminals HIN1, HIN2, HIN3, LIN1, LIN2 and LIN3 to output terminals HO1, HO2, HO3, LO1, LO2 and LO3, wherein HO1, HO2 and HO3 are logic signals of VS-VS +15V, and LO1, LO2 and LO3 are logic signals of 0-15V.
The invention also provides an air conditioner which comprises the high-voltage integrated chip with the electrostatic protection function and/or the intelligent power module. The specific structures of the high-voltage integrated chip with the electrostatic protection function and the intelligent power module refer to the above embodiments, and the air conditioner adopts all the technical schemes of all the above embodiments, so that the air conditioner at least has all the beneficial effects brought by the technical schemes of the above embodiments, and details are not repeated herein. The high-voltage integrated chip with the electrostatic protection function and/or the intelligent power module can be used for a main control board, a display board and other functional circuit boards of the air conditioner, and are not particularly limited herein; the air conditioner can be an air conditioner hanging machine, a cabinet air conditioner and the like. The high-voltage integrated chip with the electrostatic protection function and/or the intelligent power module can improve the electrostatic protection capability of the circuit board, so that the running safety of the air conditioner can be improved.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A high voltage integrated chip, comprising:
a control signal input terminal, a power supply terminal and a ground terminal;
a power driving circuit;
the input end of the front-end input circuit is connected with the control signal input end, and the front-end input circuit is adaptively connected with a control signal/electrostatic voltage of the control signal input end;
the input end of the electrostatic discharge circuit is connected with the front-end input circuit, one electrostatic discharge end of the electrostatic discharge circuit is connected with the power supply end, the other electrostatic discharge end of the electrostatic discharge circuit is connected with the grounding end, and the output end of the electrostatic discharge circuit is connected with the power driving circuit; the electrostatic discharge circuit discharges the electrostatic voltage when the front-end input circuit is the electrostatic voltage.
2. The high voltage integrated chip according to claim 1, wherein the front-end input circuit comprises a negative temperature coefficient resistor and a positive temperature coefficient resistor, and the negative temperature coefficient resistor and the positive temperature coefficient resistor are sequentially and serially arranged between the control signal input terminal and the input terminal of the electrostatic discharge circuit.
3. The HVIC of claim 2, wherein the negative temperature coefficient resistor and the positive temperature coefficient resistor have similar temperature coefficients.
4. The high voltage integrated chip of claim 2, wherein the negative temperature coefficient resistor is a poly resistor;
the positive temperature coefficient resistor is a base resistor.
5. The high voltage integrated chip of claim 4, wherein the high voltage integrated chip further comprises a substrate;
the poly resistor is arranged on one surface of the substrate;
the base resistor is embedded in the substrate, and the position of the base resistor corresponds to the position of the poly resistor.
6. The high voltage integrated chip according to claim 1, wherein the electrostatic discharge circuit comprises a first diode and a first resistor, an anode of the first diode is interconnected with the front-end input circuit and one end of the first resistor, a cathode of the first diode is connected with the power supply terminal, and the other end of the first resistor is connected with the power driving circuit.
7. The high voltage integrated chip of claim 6, wherein the input ESD unit further comprises a second diode, a cathode of the second diode is connected to the first resistor and a common terminal of the power driving circuit, and an anode of the second diode is grounded.
8. The HVIC of any one of claims 1-7, wherein the number of the control signal input terminals is plural;
each control signal input end is correspondingly provided with one front end input circuit and one static leakage circuit.
9. An intelligent power module, characterized in that the intelligent power module comprises an inverter power circuit and a high-voltage integrated chip according to any one of claims 1 to 8;
and a power driving circuit in the high-voltage integrated chip is connected with the inverter power circuit.
10. An air conditioner, characterized by comprising a high voltage integrated chip according to any one of claims 1 to 8;
and/or, comprising a smart power module according to claim 9.
CN201911171248.3A 2019-11-25 2019-11-25 High-voltage integrated chip, intelligent power module and air conditioner Pending CN110690693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911171248.3A CN110690693A (en) 2019-11-25 2019-11-25 High-voltage integrated chip, intelligent power module and air conditioner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911171248.3A CN110690693A (en) 2019-11-25 2019-11-25 High-voltage integrated chip, intelligent power module and air conditioner

Publications (1)

Publication Number Publication Date
CN110690693A true CN110690693A (en) 2020-01-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911171248.3A Pending CN110690693A (en) 2019-11-25 2019-11-25 High-voltage integrated chip, intelligent power module and air conditioner

Country Status (1)

Country Link
CN (1) CN110690693A (en)

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