CN110690245B - 基于异形纳米led晶粒的发光显示器件 - Google Patents

基于异形纳米led晶粒的发光显示器件 Download PDF

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CN110690245B
CN110690245B CN201910982273.3A CN201910982273A CN110690245B CN 110690245 B CN110690245 B CN 110690245B CN 201910982273 A CN201910982273 A CN 201910982273A CN 110690245 B CN110690245 B CN 110690245B
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郭太良
翁雅恋
周雄图
张永爱
吴朝兴
林志贤
严群
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Fuzhou University
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Abstract

本发明涉及一种基于异形纳米LED晶粒的发光显示器件，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮。本发明采用异形纳米LED晶粒，使得晶粒片放置于电极基板之间时，每个nLED晶粒的发光层总有一部分平行于电极基板，垂直于电场，大大提高电学耦合效率和发光效率。

Description

基于异形纳米LED晶粒的发光显示器件
技术领域
本发明本发明涉及集成半导体发光与显示领域，特别涉及了一种基于异形纳米LED晶粒的发光显示器件。
背景技术
LED显示具有自发光、高亮度和发光效率、低功耗、高稳定性等优点，被广泛应用于各种场合。随着LED芯片尺寸和像素间距减小，LED显示有望实现柔性、高透明、可交互、可模块化拼接的显示，被认为是具备全功能和全应用领域的革命性显示技术。其中，μLED显示是一种由微米级LED发光像素组成阵列的新型显示技术，nLED（纳米LED）显示是一种由纳米级LED发光像素组成阵列的新型显示技术。目前，国内外主要LED芯片、显示面板和显示应用厂商都已积极地投入超高密度、小间距LED（μLED和nLED）显示的开发。当LED芯片尺寸小到一定程度，对芯片的操作变得越来越困难，尤其对于nLED晶粒，如何通过各类机械工具将具有不同发光颜色的晶粒有序转移到电路基板上，且需要通过精确对准和键合实现μLED晶粒与驱动电极的精准电学接触成为一个重要的技术挑战。
发明内容
有鉴于此，本发明的目的在于提供一种基于异形纳米LED晶粒的发光显示器件，采用异形纳米LED晶粒，使得晶粒片放置于电极基板之间时，每个 nLED晶粒的发光层总有一部分平行于电极基板，垂直于电场，大大提高电学耦合效率和发光效率。
为实现上述目的，本发明采用如下技术方案：
一种基于异形纳米LED晶粒的发光显示器件，其特征在于，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒，均匀放置于电极基板间时，无论何种朝向，均会出现发光层与电场方向垂直的情况；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮。
进一步的，所述异形纳米LED晶粒形状包括球状纳米LED晶粒、多边体状纳米LED晶粒和棒状纳米LED晶粒。
进一步的，所述异形纳米LED晶粒包括单个发光层或多个平行堆叠的发光层；所述球状纳米LED晶粒和多边体状纳米LED晶粒尺寸为1纳米~1微米，棒状纳米LED晶粒的直径为1纳米~1微米，长度尺寸为1微米~10微米。
进一步的，所述棒状纳米LED晶粒在器件中的取向为其长轴方向与电场方向垂直。
进一步的，所述上驱动电极和下驱动电极至少一个是透明电极，两电极之间具有一定的间隔，形成一个独立的空间。
进一步的，所述绝缘介质层设置于两个驱动电极表面或设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触。
进一步的，所述交流控制模块提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形包括正弦波、三角波、方波、脉冲及其复合波形；所述交变电压的频率为1Hz-1000MHz，且占空比可调。
进一步的，所述驱动电极基板采用刚性基板材料或柔性基板材料，每个像素电极之间包含若干个异形纳米LED晶粒片。
一种基于异形纳米LED晶粒的发光显示器件，包括一驱动电极基板以及设置于驱动电极基板上平行排列的第一、第二和第三驱动电极；电极之间具有一定的间隔，并均匀分散设置有异形纳米LED晶粒；还设置有一交流驱动控制模块，所述交流驱动控制模块一端连接第二驱动电极，另一端分别连接第一和第三驱动电极。
进一步的，当所述绝缘介质层设置于两个驱动电极表面时，异形纳米LED晶粒之间有直接的电学接触，或由隧穿效应引起的载流子之间的交换。
本发明与现有技术相比具有以下有益效果：
本发明采用异形纳米LED晶粒，使得晶粒片放置于电极基板之间时，每个 nLED晶粒的发光层总有一部分平行于电极基板，垂直于电场，大大提高电学耦合效率和发光效率。
附图说明
图1为本发明一实施例中的一种基于异形纳米LED晶粒的nLED发光显示器件结构图示意图。
图2为本发明一实施例中的异形纳米LED晶粒的结构示意图。
图3为本发明一实施例中的一种基于异形纳米LED晶粒的nLED发光显示器件结构图示意图。
图4为本发明一实施例中的异形纳米LED晶粒结构示意图。
图中，11-上驱动电极基板、12-上驱动电极、13-异形纳米LED晶粒、15-下驱动电极、14-下驱动电极基板、131-绝缘层、132-n型半导体层、133-发光层、134-p型半导体层、21-驱动电极基板，22-第一驱动电极，23-异形纳米LED晶粒，24-第二驱动电极，25第三驱动电极。
具体实施方式
下面结合附图及实施例对本发明做进一步说明。
请参照图1，本发明提供一种基于异形纳米LED晶粒的发光显示器件，其特征在于，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒，均匀放置于电极基板间时，无论何种朝向，均会出现发光层与电场方向垂直的情况；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮。
在本实施例中，所述异形纳米LED晶粒形状包括球状纳米LED晶粒、多边体状纳米LED晶粒和棒状纳米LED晶粒。所述异形纳米LED晶粒为通过外延方法所形成的GaN基LED，包括：p掺杂型GaN层134、多重量子阱发光层133、n型掺杂GaN层132，并在外延芯片表面沉积200纳米厚的二氧化硅作为绝缘介质层131。
优选的驱动电极基板为沉积在玻璃基板的氧化铟锡（ITO），厚度约为150纳米，方阻约为20 Ω/sq。
优选的，交变电压的波形采用正弦波，频率为100 KHz，电压峰值为100 V，驱动电极和所述纳米LED晶粒之间通过介质层隔离，在交变驱动信号下，通过电学耦合实现对所述纳米LED晶粒的点亮。
在本实施例中，所述异形纳米LED晶粒包括单个发光层或多个平行堆叠的发光层；所述球状纳米LED晶粒和多边体状纳米LED晶粒尺寸为1纳米~1微米，棒状纳米LED晶粒的直径为1纳米~1微米，长度尺寸为1微米~10微米。
在本实施例中，所述棒状纳米LED晶粒在器件中的取向为其长轴方向与电场方向垂直。
在本实施例中，所述上驱动电极和下驱动电极至少一个是透明电极，两电极之间具有一定的间隔，形成一个独立的空间。
在本实施例中，所述绝缘介质层设置于两个驱动电极表面或设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触。
在本实施例中，所述交流控制模块提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形包括正弦波、三角波、方波、脉冲及其复合波形；所述交变电压的频率为1Hz-1000MHz，且占空比可调。
如图2和3所示，在另一实施例中，一种基于异形纳米LED晶粒的发光显示器件，包括一驱动电极基板以及设置于驱动电极基板上平行排列的N个电极；电极之间具有一定的间隔，并均匀分散设置有异形纳米LED晶粒；还设置有一交流驱动控制模块，所述交流驱动控制模块的两端间隔连接对应的电极；如图3所示，N=3时，交流驱动控制模块一端连接第二电极，另一端连接第一和第三电极。
在本实施例中，采用球形纳米LED晶粒，球形纳米LED晶粒的直径为100纳米，所述绝缘介质层设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触，将晶粒片通过喷墨打印的方式放置于电极基板间。
如图4所示，在本实施例中还可采用柱形纳米LED晶粒，圆柱形纳米LED晶粒的直径为100纳米，长度为1微米，所述绝缘介质层设置于圆柱形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触，将晶粒片通过喷墨打印的方式放置于电极基板间。
优选的，驱动电极基板为沉积在玻璃基板的氧化铟锡（ITO），厚度约为150纳米，方阻约为20 Ω/sq。
优选的，交变电压的波形采用正弦波，频率为100 KHz，电压峰值为100 V，驱动电极和所述纳米LED晶粒之间通过介质层隔离，在交变驱动信号下，通过电学耦合实现对所述纳米LED晶粒的点亮。
以上所述仅为本发明的较佳实施例，凡依本发明申请专利范围所做的均等变化与修饰，皆应属本发明的涵盖范围。

Claims (8)

1.一种基于异形纳米LED晶粒的发光显示器件，其特征在于，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒，均匀放置于电极基板间时，无论何种朝向，均会出现发光层与电场方向垂直的情况；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮；所述异形纳米LED晶粒形状包括球状纳米LED晶粒和棒状纳米LED晶粒；所述异形纳米LED晶粒包括单个发光层或多个平行堆叠的发光层；所述球状纳米LED晶粒尺寸为1纳米~1微米，棒状纳米LED晶粒的直径为1纳米~1微米，长度尺寸为1微米~10微米。
2.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述棒状纳米LED晶粒在器件中的取向为其长轴方向与电场方向垂直。
3.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述上驱动电极和下驱动电极至少一个是透明电极，两电极之间具有一定的间隔，形成一个独立的空间。
4.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述绝缘介质层设置于两个驱动电极表面或设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触。
5.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述交流控制模块提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形包括正弦波、三角波、方波、脉冲及其复合波形；所述交变电压的频率为1Hz-1000MHz，且占空比可调。
6.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述驱动电极基板采用刚性基板材料或柔性基板材料，每个像素电极之间包含若干个异形纳米LED晶粒。
7.一种基于异形纳米LED晶粒的发光显示器件，其特征在于：包括一驱动电极基板以及设置于驱动电极基板上平行排列的N个电极；电极之间具有一定的间隔，并均匀分散设置有异形纳米LED晶粒；还设置有一交流驱动控制模块，所述交流驱动控制模块的两端间隔连接对应的电极。
8.根据权利要求7所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：将绝缘介质层设置于两个驱动电极表面，异形纳米LED晶粒之间有直接的电学接触，或由隧穿效应引起的载流子之间的交换。
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