CN110690245B - 基于异形纳米led晶粒的发光显示器件 - Google Patents

基于异形纳米led晶粒的发光显示器件 Download PDF

Info

Publication number
CN110690245B
CN110690245B CN201910982273.3A CN201910982273A CN110690245B CN 110690245 B CN110690245 B CN 110690245B CN 201910982273 A CN201910982273 A CN 201910982273A CN 110690245 B CN110690245 B CN 110690245B
Authority
CN
China
Prior art keywords
led crystal
driving electrode
special
crystal grain
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910982273.3A
Other languages
English (en)
Other versions
CN110690245A (zh
Inventor
郭太良
翁雅恋
周雄图
张永爱
吴朝兴
林志贤
严群
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuzhou University
Original Assignee
Fuzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuzhou University filed Critical Fuzhou University
Priority to CN201910982273.3A priority Critical patent/CN110690245B/zh
Publication of CN110690245A publication Critical patent/CN110690245A/zh
Priority to PCT/CN2020/112396 priority patent/WO2021073284A1/zh
Priority to EP20877827.4A priority patent/EP4044238A4/en
Application granted granted Critical
Publication of CN110690245B publication Critical patent/CN110690245B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明涉及一种基于异形纳米LED晶粒的发光显示器件，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮。本发明采用异形纳米LED晶粒，使得晶粒片放置于电极基板之间时，每个nLED晶粒的发光层总有一部分平行于电极基板，垂直于电场，大大提高电学耦合效率和发光效率。

Description

基于异形纳米LED晶粒的发光显示器件
技术领域
本发明本发明涉及集成半导体发光与显示领域，特别涉及了一种基于异形纳米LED晶粒的发光显示器件。
背景技术
LED显示具有自发光、高亮度和发光效率、低功耗、高稳定性等优点，被广泛应用于各种场合。随着LED芯片尺寸和像素间距减小，LED显示有望实现柔性、高透明、可交互、可模块化拼接的显示，被认为是具备全功能和全应用领域的革命性显示技术。其中，μLED显示是一种由微米级LED发光像素组成阵列的新型显示技术，nLED（纳米LED）显示是一种由纳米级LED发光像素组成阵列的新型显示技术。目前，国内外主要LED芯片、显示面板和显示应用厂商都已积极地投入超高密度、小间距LED（μLED和nLED）显示的开发。当LED芯片尺寸小到一定程度，对芯片的操作变得越来越困难，尤其对于nLED晶粒，如何通过各类机械工具将具有不同发光颜色的晶粒有序转移到电路基板上，且需要通过精确对准和键合实现μLED晶粒与驱动电极的精准电学接触成为一个重要的技术挑战。
发明内容
有鉴于此，本发明的目的在于提供一种基于异形纳米LED晶粒的发光显示器件，采用异形纳米LED晶粒，使得晶粒片放置于电极基板之间时，每个 nLED晶粒的发光层总有一部分平行于电极基板，垂直于电场，大大提高电学耦合效率和发光效率。
为实现上述目的，本发明采用如下技术方案：
一种基于异形纳米LED晶粒的发光显示器件，其特征在于，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒，均匀放置于电极基板间时，无论何种朝向，均会出现发光层与电场方向垂直的情况；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮。
进一步的，所述异形纳米LED晶粒形状包括球状纳米LED晶粒、多边体状纳米LED晶粒和棒状纳米LED晶粒。
进一步的，所述异形纳米LED晶粒包括单个发光层或多个平行堆叠的发光层；所述球状纳米LED晶粒和多边体状纳米LED晶粒尺寸为1纳米~1微米，棒状纳米LED晶粒的直径为1纳米~1微米，长度尺寸为1微米~10微米。
进一步的，所述棒状纳米LED晶粒在器件中的取向为其长轴方向与电场方向垂直。
进一步的，所述上驱动电极和下驱动电极至少一个是透明电极，两电极之间具有一定的间隔，形成一个独立的空间。
进一步的，所述绝缘介质层设置于两个驱动电极表面或设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触。
进一步的，所述交流控制模块提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形包括正弦波、三角波、方波、脉冲及其复合波形；所述交变电压的频率为1Hz-1000MHz，且占空比可调。
进一步的，所述驱动电极基板采用刚性基板材料或柔性基板材料，每个像素电极之间包含若干个异形纳米LED晶粒片。
一种基于异形纳米LED晶粒的发光显示器件，包括一驱动电极基板以及设置于驱动电极基板上平行排列的第一、第二和第三驱动电极；电极之间具有一定的间隔，并均匀分散设置有异形纳米LED晶粒；还设置有一交流驱动控制模块，所述交流驱动控制模块一端连接第二驱动电极，另一端分别连接第一和第三驱动电极。
进一步的，当所述绝缘介质层设置于两个驱动电极表面时，异形纳米LED晶粒之间有直接的电学接触，或由隧穿效应引起的载流子之间的交换。
本发明与现有技术相比具有以下有益效果：
本发明采用异形纳米LED晶粒，使得晶粒片放置于电极基板之间时，每个 nLED晶粒的发光层总有一部分平行于电极基板，垂直于电场，大大提高电学耦合效率和发光效率。
附图说明
图1为本发明一实施例中的一种基于异形纳米LED晶粒的nLED发光显示器件结构图示意图。
图2为本发明一实施例中的异形纳米LED晶粒的结构示意图。
图3为本发明一实施例中的一种基于异形纳米LED晶粒的nLED发光显示器件结构图示意图。
图4为本发明一实施例中的异形纳米LED晶粒结构示意图。
图中，11-上驱动电极基板、12-上驱动电极、13-异形纳米LED晶粒、15-下驱动电极、14-下驱动电极基板、131-绝缘层、132-n型半导体层、133-发光层、134-p型半导体层、21-驱动电极基板，22-第一驱动电极，23-异形纳米LED晶粒，24-第二驱动电极，25第三驱动电极。
具体实施方式
下面结合附图及实施例对本发明做进一步说明。
请参照图1，本发明提供一种基于异形纳米LED晶粒的发光显示器件，其特征在于，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒，均匀放置于电极基板间时，无论何种朝向，均会出现发光层与电场方向垂直的情况；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮。
在本实施例中，所述异形纳米LED晶粒形状包括球状纳米LED晶粒、多边体状纳米LED晶粒和棒状纳米LED晶粒。所述异形纳米LED晶粒为通过外延方法所形成的GaN基LED，包括：p掺杂型GaN层134、多重量子阱发光层133、n型掺杂GaN层132，并在外延芯片表面沉积200纳米厚的二氧化硅作为绝缘介质层131。
优选的驱动电极基板为沉积在玻璃基板的氧化铟锡（ITO），厚度约为150纳米，方阻约为20 Ω/sq。
优选的，交变电压的波形采用正弦波，频率为100 KHz，电压峰值为100 V，驱动电极和所述纳米LED晶粒之间通过介质层隔离，在交变驱动信号下，通过电学耦合实现对所述纳米LED晶粒的点亮。
在本实施例中，所述异形纳米LED晶粒包括单个发光层或多个平行堆叠的发光层；所述球状纳米LED晶粒和多边体状纳米LED晶粒尺寸为1纳米~1微米，棒状纳米LED晶粒的直径为1纳米~1微米，长度尺寸为1微米~10微米。
在本实施例中，所述棒状纳米LED晶粒在器件中的取向为其长轴方向与电场方向垂直。
在本实施例中，所述上驱动电极和下驱动电极至少一个是透明电极，两电极之间具有一定的间隔，形成一个独立的空间。
在本实施例中，所述绝缘介质层设置于两个驱动电极表面或设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触。
在本实施例中，所述交流控制模块提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形包括正弦波、三角波、方波、脉冲及其复合波形；所述交变电压的频率为1Hz-1000MHz，且占空比可调。
如图2和3所示，在另一实施例中，一种基于异形纳米LED晶粒的发光显示器件，包括一驱动电极基板以及设置于驱动电极基板上平行排列的N个电极；电极之间具有一定的间隔，并均匀分散设置有异形纳米LED晶粒；还设置有一交流驱动控制模块，所述交流驱动控制模块的两端间隔连接对应的电极；如图3所示，N=3时，交流驱动控制模块一端连接第二电极，另一端连接第一和第三电极。
在本实施例中，采用球形纳米LED晶粒，球形纳米LED晶粒的直径为100纳米，所述绝缘介质层设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触，将晶粒片通过喷墨打印的方式放置于电极基板间。
如图4所示，在本实施例中还可采用柱形纳米LED晶粒，圆柱形纳米LED晶粒的直径为100纳米，长度为1微米，所述绝缘介质层设置于圆柱形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触，将晶粒片通过喷墨打印的方式放置于电极基板间。
优选的，驱动电极基板为沉积在玻璃基板的氧化铟锡（ITO），厚度约为150纳米，方阻约为20 Ω/sq。
优选的，交变电压的波形采用正弦波，频率为100 KHz，电压峰值为100 V，驱动电极和所述纳米LED晶粒之间通过介质层隔离，在交变驱动信号下，通过电学耦合实现对所述纳米LED晶粒的点亮。
以上所述仅为本发明的较佳实施例，凡依本发明申请专利范围所做的均等变化与修饰，皆应属本发明的涵盖范围。

Claims (8)

1.一种基于异形纳米LED晶粒的发光显示器件，其特征在于，包括从上到下依次设置的上驱动电极基板，上驱动电极、异形纳米LED晶粒、下驱动电极和下驱动电极基板；还设置有交流驱动控制模块，所述交流驱动控制模块两端分别连接上驱动电极和下驱动电极；所述异形纳米LED晶粒为包含非平面形状发光层的纳米LED晶粒，均匀放置于电极基板间时，无论何种朝向，均会出现发光层与电场方向垂直的情况；所述驱动电极和纳米LED晶粒之间通过绝缘介质层隔离，在交变驱动信号下，通过电磁耦合实现对所述纳米LED晶粒的点亮；所述异形纳米LED晶粒形状包括球状纳米LED晶粒和棒状纳米LED晶粒；所述异形纳米LED晶粒包括单个发光层或多个平行堆叠的发光层；所述球状纳米LED晶粒尺寸为1纳米~1微米，棒状纳米LED晶粒的直径为1纳米~1微米，长度尺寸为1微米~10微米。
2.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述棒状纳米LED晶粒在器件中的取向为其长轴方向与电场方向垂直。
3.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述上驱动电极和下驱动电极至少一个是透明电极，两电极之间具有一定的间隔，形成一个独立的空间。
4.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述绝缘介质层设置于两个驱动电极表面或设置于异形纳米LED晶粒的外表面，保证纳米LED晶粒与电极无直接电接触。
5.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述交流控制模块提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形包括正弦波、三角波、方波、脉冲及其复合波形；所述交变电压的频率为1Hz-1000MHz，且占空比可调。
6.根据权利要求1所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：所述驱动电极基板采用刚性基板材料或柔性基板材料，每个像素电极之间包含若干个异形纳米LED晶粒。
7.一种基于异形纳米LED晶粒的发光显示器件，其特征在于：包括一驱动电极基板以及设置于驱动电极基板上平行排列的N个电极；电极之间具有一定的间隔，并均匀分散设置有异形纳米LED晶粒；还设置有一交流驱动控制模块，所述交流驱动控制模块的两端间隔连接对应的电极。
8.根据权利要求7所述的一种基于异形纳米LED晶粒的发光显示器件，其特征在于：将绝缘介质层设置于两个驱动电极表面，异形纳米LED晶粒之间有直接的电学接触，或由隧穿效应引起的载流子之间的交换。
CN201910982273.3A 2019-10-16 2019-10-16 基于异形纳米led晶粒的发光显示器件 Active CN110690245B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201910982273.3A CN110690245B (zh) 2019-10-16 2019-10-16 基于异形纳米led晶粒的发光显示器件
PCT/CN2020/112396 WO2021073284A1 (zh) 2019-10-16 2020-08-31 基于异形纳米led晶粒的发光显示器件
EP20877827.4A EP4044238A4 (en) 2019-10-16 2020-08-31 SPECIAL SHAPED NANO-LED CRYSTALLINE GRAIN ELECTROLUMINESCENT DISPLAY DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910982273.3A CN110690245B (zh) 2019-10-16 2019-10-16 基于异形纳米led晶粒的发光显示器件

Publications (2)

Publication Number Publication Date
CN110690245A CN110690245A (zh) 2020-01-14
CN110690245B true CN110690245B (zh) 2022-03-25

Family

ID=69112906

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910982273.3A Active CN110690245B (zh) 2019-10-16 2019-10-16 基于异形纳米led晶粒的发光显示器件

Country Status (3)

Country Link
EP (1) EP4044238A4 (zh)
CN (1) CN110690245B (zh)
WO (1) WO2021073284A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690245B (zh) * 2019-10-16 2022-03-25 福州大学 基于异形纳米led晶粒的发光显示器件
CN111724699B (zh) * 2020-06-12 2021-07-06 福州大学 一种nled像素设置及修复方法
WO2023070434A1 (zh) * 2021-10-28 2023-05-04 华为技术有限公司 电极组件及其制备方法和显示装置
CN114141805A (zh) * 2021-11-24 2022-03-04 福州大学 无侧壁损伤的nano-LED阵列及其制作方法
CN114300503A (zh) * 2021-12-28 2022-04-08 福州大学 包覆式多量子阱nled阵列结构及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1988186A (zh) * 2005-12-21 2007-06-27 群康科技(深圳)有限公司 发光二极管及其制作方法
CN107681033A (zh) * 2017-10-26 2018-02-09 业成科技（成都）有限公司 微型led器件及制备方法、显示装置
CN109326548A (zh) * 2018-08-29 2019-02-12 华映科技（集团）股份有限公司 一种实现垂直结构mLED或uLED巨量转移的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4912448B2 (ja) * 2009-10-22 2012-04-11 シャープ株式会社 発光装置およびその製造方法
CN103296048B (zh) * 2013-05-22 2016-05-25 安徽唯象光电技术有限公司 一种基于电致发光原理的发光结构及显示器件
WO2017062116A1 (en) * 2015-10-07 2017-04-13 Koninklijke Philips N.V. Reflective coating for flip-chip chip-scale package leds improved package efficiency
KR102608419B1 (ko) * 2016-07-12 2023-12-01 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
CN106229394B (zh) * 2016-10-19 2019-06-07 武汉华星光电技术有限公司 微发光二极管及其制造方法和显示器
CN106992232A (zh) * 2017-03-13 2017-07-28 中国科学院半导体研究所 无衬底GaN基LED单颗晶粒及其制备方法
US11600743B2 (en) * 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
CN108123050B (zh) * 2017-12-04 2020-05-12 武汉华美晨曦光电有限责任公司 一种以交流驱动的白光oled器件
KR102448104B1 (ko) * 2018-02-08 2022-09-29 삼성디스플레이 주식회사 발광 장치 및 그의 제조 방법
CN109256455B (zh) * 2018-09-19 2020-06-12 福州大学 一种光效提取和无像素干扰的全彩化Micro-LED显示结构及其制造方法
CN109407406A (zh) * 2018-12-24 2019-03-01 厦门天马微电子有限公司 显示模组和显示装置
CN110690245B (zh) * 2019-10-16 2022-03-25 福州大学 基于异形纳米led晶粒的发光显示器件
CN110556459B (zh) * 2019-10-16 2021-06-22 福州大学 一种彩色μLED发光显示器件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1988186A (zh) * 2005-12-21 2007-06-27 群康科技(深圳)有限公司 发光二极管及其制作方法
CN107681033A (zh) * 2017-10-26 2018-02-09 业成科技（成都）有限公司 微型led器件及制备方法、显示装置
CN109326548A (zh) * 2018-08-29 2019-02-12 华映科技（集团）股份有限公司 一种实现垂直结构mLED或uLED巨量转移的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Novel Approach for Alternating Current (AC)-Driven Organic light-emitting devices;Ajay Perumal, et al.;《Advanced Functional Materials》;20111107;第22卷;page 210-217 *

Also Published As

Publication number Publication date
CN110690245A (zh) 2020-01-14
EP4044238A1 (en) 2022-08-17
WO2021073284A1 (zh) 2021-04-22
EP4044238A4 (en) 2022-12-28

Similar Documents

Publication Publication Date Title
CN110690245B (zh) 基于异形纳米led晶粒的发光显示器件
CN110690246B (zh) 一种非直接电学接触取向有序nLED发光显示器件
CN110556459B (zh) 一种彩色μLED发光显示器件
EP3079171B1 (en) Transfer system comprising a transfer head of semiconductor light emitting device, and method of transferring semiconductor light emitting device
CN102782892B (zh) 发光装置的制造方法、发光装置、照明装置、背光灯、液晶面板、显示装置、显示装置的制造方法、显示装置的驱动方法及液晶显示装置
US20230059135A1 (en) Display device related to micro-led and manufacturing method therefor
US20220367774A1 (en) Display device using micro led, and manufacturing method therefor
CN107210350A (zh) 用于水平排列组件的超小型发光二极管元件、其制造方法及包括其的水平排列组件
CN110676284B (zh) 一种非电学接触、无外部载流子注入的μLED发光与显示器件
US20220399313A1 (en) Display device using micro led and method of manufacturing same
US20220320371A1 (en) Display device using micro-leds and method for manufacturing same
CN114946024A (zh) 利用发光元件的显示器的制造装置及其制造方法
CN110690328B (zh) 一种基于波长下转换的无电学接触μLED发光器件
CN110676250B (zh) 一种无电学接触无巨量转移的全彩化μLED显示器件
CN103383981A (zh) 发光二极管元件
EP4005802A1 (en) Inkjet printing device, method for aligning bipolar element, and method for manufacturing display device
CN110690329B (zh) 一种单端电学接触、单端载流子注入的μLED发光与显示器件及其制备方法
EP3993048A1 (en) Substrate for manufacturing display device and method for manufacturing display device
JP2011198697A (ja) 発光装置、発光装置の製造方法、照明装置およびバックライト
KR102375861B1 (ko) 백투백 구조의 초소형 이중 ｌｅｄ 소자 및 그 제조 방법과 백투백 구조의 초소형 이중 ｌｅｄ 의 전극 어셈블리 및 그 제조방법
US11845276B2 (en) Inkjet head and method of ejecting ink using the same
CN113409721B (zh) 一种发光器件电场驱动调制装置
CN115810700A (zh) 发光元件及电极基板
KR20220153728A (ko) 표시 장치의 제조 방법 및 제조 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant