CN110678002B

CN110678002B - Circuit copper foil processing method, circuit copper foil and circuit board

Info

Publication number: CN110678002B
Application number: CN201910962418.3A
Authority: CN
Inventors: 杨洁; 沈洪; 孙彬; 吴骏; 李晓华
Original assignee: Jiangsu Shangda Electronics Co Ltd
Current assignee: Jiangsu SHANGDA Semiconductor Co.,Ltd.
Priority date: 2019-10-11
Filing date: 2019-10-11
Publication date: 2020-12-22
Anticipated expiration: 2039-10-11
Also published as: CN110678002A

Abstract

The invention relates to the technical field of circuit board processing, and discloses a circuit copper foil processing method, a circuit copper foil and a circuit board. The processing method of the circuit copper foil comprises the following steps: s1, preparing a nano silicon hybrid polyimide film; s2, passivating the part of the obtained polyimide film which does not need to form a copper circuit; s3, depositing a conductive medium layer on the surface of the polyimide film by using a PTH method; s4, electroplating a copper layer on the surface of the conductive medium layer; and S5, removing the copper layer in the passivation area of the polyimide film. The invention also provides a circuit copper foil which is manufactured by the circuit copper foil processing method. The invention also provides a circuit board which comprises the circuit copper foil manufactured by the circuit copper foil processing method. The processing method of the circuit copper foil has the advantages of simple process, low cost and environmental friendliness.

Description

Circuit copper foil processing method, circuit copper foil and circuit board

Technical Field

The invention relates to the technical field of circuit board processing, in particular to a circuit copper foil processing method, a circuit copper foil and a circuit board.

Background

At present, the production process of the circuit board needs to use copper foil raw materials, a circuit is obtained by a subtractive etching method, or a required copper wire pattern is obtained by further addition in a pattern electroplating mode or a semi-addition mode, then the copper foil at the bottom layer is etched by an etching method, and a circuit part is reserved.

Generally, the processing method of copper foil is divided into three types: pressing, sputtering, and coating.

The method is the most common copper foil processing method at present, but the obtained copper foil has limited thickness and can meet the requirement of 9um copper foil processing at the lowest, the manufactured copper foil is unstable in expansion and shrinkage, continuous left expansion and shrinkage compensation is required in the FPC production process, and the copper foil can only be used as a common circuit, and a refined circuit cannot meet the requirement.

The coating method generally coats a layer of liquid TPI on the surface of the copper foil to be used as an adhesive, and then the roller is used for pressing the Cu and the Cu together.

The current method is to sputter a conductive seed layer on the PI film and then electroplate a copper foil with the thickness of about 2um on the surface of the copper foil in an electroplating way.

Therefore, the existing processing method of the circuit copper foil generally has the defects of complex process, high cost and poor environmental friendliness.

Disclosure of Invention

In order to overcome the defects of the prior art, the invention provides the circuit copper foil processing method which is simple in process, low in cost and environment-friendly.

In order to overcome the defects of the prior art, the invention also provides the copper foil manufactured by the circuit copper foil processing method, which has the advantages of simple process, low cost and environmental friendliness.

In order to overcome the defects of the prior art, the invention also provides a circuit board which comprises the copper foil manufactured by the circuit copper foil processing method and has the advantages of simple process, low cost and environmental friendliness.

The technical scheme adopted by the invention for solving the technical problems is as follows: providing a processing method of a circuit copper foil, comprising the following steps of S1, preparing a nano silicon hybrid polyimide film; s2, passivating the part of the obtained polyimide film which does not need to form a copper circuit; s3, depositing a conductive medium layer on the surface of the polyimide film by using a PTH method; s4, electroplating a copper layer on the surface of the conductive medium layer; and S5, removing the copper layer in the passivation area of the polyimide film.

As a further improvement of the above technical solution, in S2, a negative film is disposed on the polyimide film, the negative film is provided with a blocking area and a light-transmitting area, and the negative film is provided with an excitation source, and the excitation source passes through the light-transmitting area and irradiates an area of the polyimide film where no copper line is required to be formed, so that the area is excited and passivated.

As a further improvement of the above technical means, in S2, a barrier sheet is covered on the polyimide film in the region where the copper wiring is to be formed, and an excitation source is provided to excite the polyimide film, so that the region where the copper wiring is not to be formed on the surface of the polyimide film is excited and passivated.

As a further improvement of the above technical solution, in S1, the nano-silicon hybrid polyimide film is prepared by a sol-gel method.

The invention also provides a circuit copper foil which is manufactured by adopting the circuit copper foil processing method.

The invention also provides a circuit board which comprises the copper foil, wherein the copper foil is manufactured by the circuit copper foil processing method.

The invention has the beneficial effects that:

the processing method of the circuit copper foil comprises the steps of firstly preparing a nano-silicon hybrid polyimide film, changing the characteristics of the polyimide by nano-silicon hybridization, enabling the polyimide film to be directly subjected to electroplating treatment, then passivating the part, which does not need to be provided with circuit copper, on the surface of the polyimide film to enable the part to be converted into common polyimide, remarkably reducing the copper adhesion of the passivated area on the surface of the polyimide film, then depositing a conductive dielectric layer on the surface of the polyimide film, then electroplating a copper layer on the conductive dielectric layer, and finally removing the copper layer, which does not need to form the circuit copper area, on the polyimide film to form the circuit copper foil. The processing method of the circuit copper foil directly makes the copper circuit on the polyimide film, simplifies the production flow of the circuit board, reduces the discharge of waste water and waste gas in the production process, and has the advantages of low cost and environmental protection.

Drawings

The invention is further illustrated with reference to the following figures and examples.

FIG. 1 is a flow chart of a method of processing a circuit copper foil according to an embodiment of the present invention;

fig. 2 is a process diagram of selective passivation in one embodiment of the invention.

Detailed Description

The conception, the specific structure and the technical effects of the present invention will be clearly and completely described in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the schemes and the effects of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.

It should be noted that, unless otherwise specified, when a feature is referred to as being "fixed" or "connected" to another feature, it may be directly fixed or connected to the other feature or indirectly fixed or connected to the other feature. Furthermore, the descriptions of up, down, left, right, front, rear, etc. used in the present invention are only relative to the positional relationship of the respective components of the present invention with respect to each other in the drawings.

Furthermore, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any combination of one or more of the associated listed items.

Referring to fig. 1, a flow chart of a method for processing a circuit copper foil according to an embodiment of the present invention is shown. A processing method of a circuit copper foil comprises the following steps:

and S1, preparing the nano silicon hybridized polyimide film (PI film). In this embodiment, it is preferable to prepare the nano-silicon hybrid polyimide film by a sol-gel method, and the nano-silicon hybrid polyimide film changes the characteristics of polyimide and enables the polyimide film to be directly subjected to electroplating treatment.

And S2, performing selective passivation treatment on the nano-silicon hybrid polyimide film, namely performing passivation treatment on the part of the nano-silicon hybrid polyimide film which does not need to form the circuit copper, and avoiding performing passivation treatment on the part of the nano-silicon hybrid polyimide film which needs to form the circuit copper.

In one embodiment of the present invention, the selective passivation process is: as shown in fig. 2, a base sheet 200 is disposed on the nano-silicon hybrid polyimide film 100, the base sheet 200 includes a blocking region 210 and a light-transmitting region 220, an excitation source 300 is further disposed on the base sheet 200, the excitation source 300 emits an excitable light beam onto the nano-silicon hybrid polyimide film 100, when the light beam acts on the nano-silicon hybrid polyimide film 100, the nano-silicon hybrid polyimide film 100 is excited to be transformed into a common polyimide film, the adhesion force to copper is significantly reduced compared with the nano-silicon hybrid polyimide film 100, in this embodiment, the blocking region 210 is located exactly on a path of the excitation source 300 capable of irradiating a light beam to be formed on the nano-silicon hybrid polyimide film 100, so as to prevent the light beam of the excitation source 300 from irradiating a region of the nano-silicon hybrid polyimide film 100 where the formation of the circuit copper is required, and a part of light beams of the excitation source 300 pass through the light-transmitting region 220 and irradiate a region on the nano-silicon hybrid polyimide film 100 where no circuit copper is required to be formed, so that the region is excited and converted into a common polyimide film.

In another embodiment of the present invention, a plurality of barrier plates may be disposed on the nano-silicon hybrid polyimide film, the barrier plates just cover the areas of the nano-silicon hybrid polyimide film where the copper lines need to be formed, and then the excitation source is disposed on the nano-silicon hybrid polyimide film to excite the entire nano-silicon hybrid polyimide film, at this time, the areas of the nano-silicon hybrid polyimide film where the copper lines need to be formed are protected by the barrier plates and are not excited by the excitation source, and other areas are excited by the excitation source to be converted into the common polyimide film.

And S3, depositing a conductive medium layer on the polyimide film after the treatment. In this embodiment, a conductive dielectric layer is preferably deposited on the polyimide film by a PTH method.

And S4, plating a copper layer on the conductive medium layer.

And S5, removing the copper layer on the passivation area of the polyimide film to obtain the selected circuit copper foil. The copper layer removal may include conventional physical removal methods.

The invention also provides a copper foil which is manufactured by the processing method of the circuit copper foil.

The invention also provides a circuit board which comprises the copper foil, wherein the copper foil is manufactured by the processing method of the circuit copper foil.

While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A processing method of a circuit copper foil is characterized by comprising the following steps:

s1, preparing a nano silicon hybrid polyimide film;

s2, passivating the part of the obtained polyimide film which does not need to form a copper circuit;

s3, depositing a conductive medium layer on the surface of the polyimide film by using a PTH method;

s4, electroplating a copper layer on the surface of the conductive medium layer;

and S5, removing the copper layer in the passivation area of the polyimide film.

2. The method for processing a wiring copper foil as recited in claim 1, wherein in S2, a base sheet is provided on the polyimide film, the base sheet is provided with the blocking area and the light transmitting area, and the base sheet is provided with the excitation source, and the excitation source passes through the light transmitting area and irradiates an area of the polyimide film where the copper wiring is not to be formed, so that the area is excited and passivated.

3. The method of processing a copper foil for a circuit of claim 1, wherein in step S2, the polyimide film is coated with the barrier sheet in the areas where the copper wiring is to be formed, and an excitation source is provided to excite the polyimide film, thereby inactivating the areas where the copper wiring is not to be formed on the surface of the polyimide film.

4. The method for processing a circuit copper foil according to claim 1, wherein in S1, the nano-silicon hybrid polyimide film is prepared by a sol-gel method.

5. A circuit copper foil produced by the circuit copper foil processing method according to any one of claims 1 to 4.

6. A circuit board comprising copper foil, wherein the copper foil is produced by the circuit copper foil processing method according to any one of claims 1 to 4.