CN110676689A - Vertical cavity surface emitting semiconductor laser and preparation method thereof - Google Patents

Vertical cavity surface emitting semiconductor laser and preparation method thereof Download PDF

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Publication number
CN110676689A
CN110676689A CN201910968503.0A CN201910968503A CN110676689A CN 110676689 A CN110676689 A CN 110676689A CN 201910968503 A CN201910968503 A CN 201910968503A CN 110676689 A CN110676689 A CN 110676689A
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vertical cavity
surface emitting
cavity surface
semiconductor laser
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郝永芹
罗妍
郝誉
李博
李晓雪
张乃予
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Changchun University of Science and Technology
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Changchun University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Abstract

The application provides a vertical cavity surface emitting semiconductor laser and preparation method thereof, vertical cavity surface emitting semiconductor laser is including relative N face electrode and the P face electrode that sets up, N face electrode with be provided with the functional layer between the P face electrode, in the first direction, the functional layer is including the substrate that sets gradually, N type distributed Bragg reflector, active gain district, first oxide layer and P type heavily mix the layer, the second oxide layer, stress buffer layer and high refractive index subwavelength grating layer, the first direction be by N face electrode points to the direction of P face electrode. The vertical cavity surface emitting semiconductor laser can greatly improve the photoelectric characteristics of devices and is beneficial to manufacturing miniaturized low-cost devices.

Description

Vertical cavity surface emitting semiconductor laser and preparation method thereof
Technical Field
The application belongs to the technical field of semiconductor lasers, and particularly relates to a vertical cavity surface emitting semiconductor laser and a preparation method thereof.
Background
Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as the working substance. Due to the difference in material structure, the specific process of generating laser light in different types is more specific. The VCSEL is named as Vertical Cavity Surface Emitting Laser (Vertical Cavity Emitting Laser), is different from other light sources such as LED (light Emitting diode) and LD (Laser diode), has the advantages of small volume, circular output light spot, single longitudinal mode output, small threshold current, low price, easy integration into a large-area array, and the like, is widely applied to optical communication, optical interconnection, optical storage, and especially in the fields of iPhone3D sensing technology, automatic driving, unmanned aerial vehicle, AR/VR, and the like which are rapidly developed in recent years.
At present, the development and application of the GaAs-based VCSEL are the most extensive, for example, the 850nm VCSEL is widely used for optical communication and smart phones, and the 808nm VCSEL is an ideal light source for pumping solid lasers and fiber lasers. A typical device structure of a GaAs-based VCSEL mainly includes P, N-type Distributed Bragg Reflectors (DBRs) and an intermediate Multiple Quantum Well (MQW) active layer with an oxide layer between the active region and the P-DBRs. The resonant cavity is composed of N-type and P-type DBRs, wherein the DBRs are formed by alternately growing two high-refractive-index layers and low-refractive-index layers of GaAs/AlGaAs with optical thickness of lambda/4. To achieve extremely high reflectivity (typically greater than 99.5%), the logarithm of DBRs is typically 20-40 pairs.
With the increase of the logarithm of the DBRs, the series resistance in the device is increased, especially for P-type DBRs, because the effective mass of the hole is larger and the mobility thereof is smaller, the formed homotype heterojunction has a larger potential barrier at the interface, which results in higher series resistance, thereby causing the internal temperature of the VCSEL to rise, changing the refractive index and forbidden bandwidth of the semiconductor material, and seriously affecting the device performance.
Content of application
1. Technical problem to be solved
With the increase of the logarithm of the DBRs, on one hand, the series resistance in the device is increased, especially for P-type DBRs, because the effective mass of a hole is larger and the mobility thereof is smaller, a formed homotype heterojunction has a larger potential barrier at an interface, and higher series resistance is caused, so that the internal temperature of the VCSEL is increased, the refractive index and forbidden bandwidth of a semiconductor material are changed, and the performance of the device is seriously affected. The application provides a vertical cavity surface emitting semiconductor laser and a preparation method thereof.
2. Technical scheme
In order to solve the technical problem, the present application provides a vertical cavity surface emitting semiconductor laser, including an N-plane electrode and a P-plane electrode which are oppositely arranged, wherein a functional layer is arranged between the N-plane electrode and the P-plane electrode, the functional layer includes a substrate, an N-type distributed bragg reflector, an active gain region, a first oxide layer and a P-type heavily doped layer which are sequentially arranged in a first direction, and the first direction is a direction from the N-plane electrode to the P-plane electrode;
the P-surface electrodes are arranged on two sides of the P-surface reflector; the P-surface reflector comprises a second oxidation layer, a stress buffer layer and a high-refractive-index sub-wavelength grating layer which are sequentially arranged, the second oxidation layer, the stress buffer layer and the high-refractive-index sub-wavelength grating layer are sequentially arranged in the first direction, and the P-type heavily-doped layer is arranged between the first oxidation layer and the second oxidation layer.
Another embodiment provided by the present application is: the thickness of the P-surface reflector is 400 nm-600 nm.
Another embodiment provided by the present application is: the stress buffer layer is made of the same material as the high-refractive-index sub-wavelength grating layer.
Another embodiment provided by the present application is: the P-type heavily doped layer is disposed above the first oxide layer.
Another embodiment provided by the present application is: the first oxide layer is a partial oxide layer, and the second oxide layer is a complete oxide layer.
Another embodiment provided by the present application is: the stress buffer layer is made of GaAs materials, and the high-refractive-index sub-wavelength grating layer is made of GaAs materials.
Another embodiment provided by the present application is: the second oxide layer and the high-refractive-index sub-wavelength grating layer form high refractive-index contrast.
Another embodiment provided by the present application is: the thickness of the stress buffer layer is 100-200 nm.
Another embodiment provided by the present application is: the thickness of the high-refractive-index sub-wavelength grating layer is 200-350 nm.
Another embodiment provided by the present application is: the P-surface electrodes are arranged on two sides of the P-surface reflector.
The application also provides a preparation method of the vertical cavity surface emitting laser, which comprises the following steps:
step 1: the epitaxial structure of the vertical cavity surface emitting laser is completed on the GaAs substrate by molecular beam epitaxial growth or metal organic chemical vapor deposition through a one-step growth technology;
step 2: etching, namely shallow etching is performed to just reach the P-type heavily doped layer, and after the second oxide layer is just completely exposed, complete oxidation is performed;
and step 3: continuously etching until the first oxide layer is just completely exposed, and performing partial oxidation according to the size of the oxidation aperture;
and 4, step 4: and partially etching the high-refractive-index layer, wherein the etching depth is less than the thickness of the high-refractive-index layer, and a stress buffer layer and a high-refractive-index sub-wavelength grating layer are formed.
Another embodiment provided by the present application is: the shallow etching in the step 2 comprises photoetching and chemical etching.
Another embodiment provided by the present application is: the partial etching on the high refractive index layer includes electron beam exposure and inductively coupled plasma etching.
Another embodiment provided by the present application is: the etching depth of the step 2 is less than that of the step 3, but the width of the groove etched in the step 2 is greater than that of the groove etched in the step 3.
3. Advantageous effects
Compared with the prior art, the vertical cavity surface emitting semiconductor laser provided by the application has the beneficial effects that:
the vertical cavity surface emitting semiconductor laser improves the performance of the vertical cavity surface emitting semiconductor laser by optimizing the structure of the device.
The vertical cavity surface emitting semiconductor laser comprises a dual-oxide layer structure, good electro-optical limitation can be provided for a device by utilizing a first oxide layer, a P-surface reflector of the vertical cavity surface emitting semiconductor laser is formed by utilizing a high-refractive-index sub-wavelength grating layer, a stress buffer layer and a second oxide layer, the reflection characteristic equivalent to or better than that of P-type DBRs is provided, the vertical cavity surface emitting semiconductor laser has the characteristics of high reflectivity and wide bandwidth, the series resistance and the power consumption of the device are reduced, and the photoelectric characteristic of the device is improved.
The vertical cavity surface emitting semiconductor laser provided by the application has the advantages that the P-surface reflector composed of the high-refractive-index sub-wavelength grating layer, the stress buffer layer and the second oxide layer plays a good role in polarization control of output light, mode hopping is inhibited, and the beam quality of a VCSEL (vertical cavity surface emitting laser) can be effectively improved.
The application provides a vertical cavity surface emitting semiconductor laser, device overall structure are the GaAs material system, can accomplish the preparation of whole epitaxial wafer through once epitaxial growth, have avoided the stress problem that different material systems easily lead to, and the design of stress buffer layer in addition has also increased substantially the thermal stability when the second oxidation layer oxidizes.
The application provides a vertical cavity surface emitting semiconductor laser, the P face speculum thickness that constitutes by high refracting index sub-wavelength grating layer, stress buffer layer, second oxide layer is only 400 ~ 600nm, and this makes the vertical size of speculum obviously reduce on the device, is favorable to the device miniaturization.
The application provides a vertical cavity surface emitting semiconductor laser, by the P face speculum that high refractive index sub-wavelength grating layer, stress buffer layer, second oxide layer constitute, greatly reduced epitaxial growth's the number of piles, reduced the preparation degree of difficulty and the cost of device.
Drawings
FIG. 1 is a schematic diagram of a VCSEL laser structure of the present application;
FIG. 2 is a schematic view of a P-plane mirror structure of the present application;
FIG. 3 is a graph of reflection characteristics of a TM polarized P-plane mirror of the present application;
in the figure: the light-emitting diode comprises a 1-N surface electrode, a 2-substrate, a 3-N type distributed Bragg reflector, a 4-active gain region, a 5-first oxide layer, a 6-P type heavily doped layer, a 7-P surface electrode, an 8-second oxide layer, a 9-stress buffer layer, a 10-high-refractive-index sub-wavelength grating layer and a 11-high-refractive-index layer.
Detailed Description
Hereinafter, specific embodiments of the present application will be described in detail with reference to the accompanying drawings, and it will be apparent to those skilled in the art from this detailed description that the present application can be practiced. Features from different embodiments may be combined to yield new embodiments, or certain features may be substituted for certain embodiments to yield yet further preferred embodiments, without departing from the principles of the present application.
The oxidation technology is the main technical means for realizing photoelectric limitation in the manufacturing process of the prior VCSEL device, and the introduction of the technology reduces the threshold current of the device and improves the photoelectric conversion efficiency. The oxidation technique is to use Al-rich AlGaAs or AlAs layer between VCSEL active area and DBRs or in DBRs to generate AlxOy oxide layer with stable chemical property as electric insulation layer after oxidation, because the oxidation of AlGaAs or AlAs layer is performed along the transverse direction of the layer, the oxidized area in the layer forms high resistance area by controlling the oxidation process, and the central unoxidized area becomes current injection area. Currently, the oxidation technology has become the most important key technology in the preparation of GaAs-based VCSEL chips.
The TM mode has an electric field component in the direction of propagation and no magnetic field component, called a transverse magnetic wave. In a planar optical waveguide (closed cavity structure), electromagnetic field components have Hy, Ex and Ez, and the propagation direction is the z direction.
The TE mode is a mode having a magnetic field component and no electric field component in the propagation direction of an electromagnetic wave, and is called a transverse electric wave. In a planar optical waveguide (closed cavity structure), the electromagnetic field component has Ey, Hx, Hz, and the propagation direction is the z direction.
Referring to fig. 1 to 3, the present application provides a vertical cavity surface emitting semiconductor laser, including an N-plane electrode 1 and a P-plane electrode 7 which are oppositely disposed, where a functional layer is disposed between the N-plane electrode 1 and the P-plane electrode 7, and in a first direction, the functional layer includes a substrate 2, an N-type distributed bragg reflector 3, an active gain region 4, a first oxide layer 5, and a P-type heavily doped layer 6 which are sequentially disposed, and the first direction is a direction from the N-plane electrode 1 to the P-plane electrode 7;
the P-surface electrodes are arranged on two sides of the P-surface reflector; the P-surface reflector comprises a second oxide layer 8, a stress buffer layer 9 and a high-refractive-index sub-wavelength grating layer 10 which are sequentially arranged, the second oxide layer 8, the stress buffer layer 9 and the high-refractive-index sub-wavelength grating layer 10 are sequentially arranged in the first direction, and a P-type heavily-doped layer 6 is arranged between the first oxide layer 5 and the second oxide layer 8.
The vertical cavity surface emitting semiconductor laser is a GaAs-based VCSEL. The first oxide layer 5 provides a good electro-optical confinement for the device. The stress buffer layer 9 is located between the high refractive index sub-wavelength grating layer 10 and the second oxidation layer 8, and is used for relieving the influence of stress caused by a contraction effect on the stability of the high refractive index sub-wavelength grating layer 10 in the oxidation process of the second oxidation layer 8, and meanwhile, the high reflection bandwidth of the high refractive index sub-wavelength grating can be adjusted.
Furthermore, the thickness of the P-surface reflector is 400 nm-600 nm.
Further, the stress buffer layer 9 is made of the same material as the high refractive index sub-wavelength grating layer 10.
Further, the P-type heavily doped layer 6 is disposed above the first oxide layer 5.
Further, the first oxide layer 5 is a partial oxide layer, and the second oxide layer 8 is a complete oxide layer.
Further, the stress buffer layer 9 is made of GaAs material, and the high refractive index sub-wavelength grating layer 10 is made of GaAs material.
Further, the second oxide layer 8 and the high refractive index sub-wavelength grating layer 10 form a high refractive index contrast, which can significantly improve the reflectivity and high reflection bandwidth of the high refractive index sub-wavelength grating.
Further, the thickness of the stress buffer layer 9 is 100-200 nm.
Further, the thickness of the high refractive index sub-wavelength grating layer 10 is 200-350 nm.
Further, the P-side electrodes 7 are disposed on both sides of the P-side mirror.
The application also provides a preparation method of the vertical cavity surface emitting laser, which comprises the following steps:
step 1: the epitaxial structure of the vertical cavity surface emitting laser is completed on the GaAs substrate by a molecular beam epitaxy growth (MBE) technology or a Metal Organic Chemical Vapor Deposition (MOCVD) technology through a one-step growth technology;
step 2: etching is carried out, shallow etching is carried out until the P-type heavily doped layer 6 is formed, and complete oxidation is carried out after the second oxide layer 8 is exposed completely;
and step 3: continuously etching until the first oxidation layer 5 is just completely exposed, and carrying out partial oxidation according to the size of the oxidation aperture;
and 4, step 4: partial etching is carried out on the high-refractive-index layer 11, the etching depth is smaller than the thickness of the high-refractive-index layer 11, and a stress buffer layer 9 and a high-refractive-index sub-wavelength grating layer 10 are formed.
Further, the shallow etching in step 2 includes photolithography and chemical etching.
Furthermore, the P-surface electrode 7 is manufactured on the surface of the P-type heavily doped layer 6;
further, the partial etching on the high refractive index layer 11 includes electron beam exposure and inductively coupled plasma etching.
Further, the etching depth of the step 2 is smaller than the etching depth of the step 3, but the width of the etched groove of the step 2 is larger than the width of the etched groove of the step 3.
On the other hand, growing 100 layers of DBRs also increases the process difficulty and the manufacturing cost of the device, and is not favorable for the miniaturization of the device. The vertical cavity surface emitting semiconductor laser provided by the application has the advantages that the thickness of a P-surface reflector formed by the high-refractive-index sub-wavelength grating layer 10, the stress buffer layer 9 and the second oxide layer 8 is only 400-600 nm, so that the longitudinal size of the reflector on a device is obviously reduced, and the miniaturization of the device is facilitated.
In the application, the high-refractive-index sub-wavelength grating layer 10, the stress buffer layer 9 and the second oxide layer 8 are utilized to form the P-surface reflector of the vertical-cavity surface-emitting semiconductor laser, so that the reflection characteristic equivalent to or better than that of P-type DBRs is provided, the high-reflectivity and wide-bandwidth characteristics are achieved, the series resistance and power consumption of the device are reduced, and the photoelectric characteristic of the device is improved. And the P-surface reflector composed of the high-refractive-index sub-wavelength grating layer 10, the stress buffer layer 9 and the second oxide layer 8 has good polarization control on output light, inhibits mode hopping and can effectively improve the beam quality of the VCSEL.
Stress buffer layer 9 in this application is the homogeneous material with high refracting index sub-wavelength grating layer 10, and its existence has both alleviated stress and stress that the shrink leads to when second oxidation layer 8 oxidizes and the influence to device stability, can adjust the high reflection bandwidth simultaneously, and through rationally setting up its value, the high reflection bandwidth can obviously improve.
The existence of the second oxide layer 8 in the present application significantly widens the high-reflectivity bandwidth, and the change in the thickness thereof has a non-negligible effect on the polarization, and the polarization selectivity of the mirror can be improved by reasonably setting the thickness thereof.
Examples
The application is applicable to all GaAs-based VCSELs, and the wavelength of the VCSEL is 850nm for example, so that the application is further elaborated.
GaAs substrate 2 was grown in sequence with a doping concentration of 3X 10 by C18cm～340 pairs of optical thicknesses are all quarter-wave Al0.1Ga0.9As/Al0.9Ga0.1n-DBR mirror 3 composed of As, GaAs and Al0.3Ga0.7Active gain region 4 composed of As, Al of 30nm0.98Ga0.02A first oxidation layer 5 of As and a heavily doped P-type layer 6 of GaAs material, a second oxidation layer 8 of AlAs material, a high refractive index layer 11 of GaAs material. Then, the3 times of etching is needed for the table-board, the second oxidation layer is just completely exposed through photoetching and chemical corrosion, and the layer is completely oxidized; continuing to etch until the first oxidation layer 5 is just completely exposed, and carrying out partial oxidation according to the size of the oxidation aperture; then, the stress buffer layer 9 (the remaining portion after etching) and the high refractive index sub-wavelength grating layer 10 are formed by partially etching on the high refractive index layer 11 by Electron Beam Lithography (EBL) and inductively coupled ion etching (ICP), respectively.
The high-refractive-index sub-wavelength grating layer 10 is made of GaAs, the film thickness is 200-350 nm, and the refractive index to 850nm wavelength is 3.521; the stress buffer layer is made of GaAs, the film thickness is 100-200 nm, and the refractive index to 850nm wavelength is 3.521. And then, etching the part on the high-refractive-index layer 11 by using an Electron Beam Lithography (EBL) and an inductively coupled ion etching (ICP) technology to respectively form a stress buffer layer 9 (the rest part after etching) and a high-refractive-index sub-wavelength grating layer 10, wherein the duty ratio is 0.5-0.6, and the period is 0.3-0.45 mu m. The etching depth of the first shallow etching is less than the second etching depth, but the width of the etched groove is greater than that of the second etching, so that a P-surface electrode 7 is manufactured on the upper surface of the P-type heavily doped layer 6, as shown in fig. 1. The upper reflector of the vertical cavity surface emitting semiconductor laser resonant cavity is composed of the second oxide layer 8, the stress buffer layer 9 and the high-refractive index sub-wavelength grating layer 10, and is a high-refractive index contrast sub-wavelength grating reflector with the same material system as the VCSEL.
As can be seen from the reflection characteristic map of the P-plane mirror with TM polarization in the same material system as that of the VCSEL in fig. 3, the TM mode exhibits high reflectance and a wide broadband at normal incidence, and the TE mode reflectance peak is 90% near the center wavelength, which has good polarization selectivity.
Although the present application has been described above with reference to specific embodiments, those skilled in the art will recognize that many changes may be made in the configuration and details of the present application within the principles and scope of the present application. The scope of protection of the application is determined by the appended claims, and all changes that come within the meaning and range of equivalency of the technical features are intended to be embraced therein.

Claims (10)

1. A vertical cavity surface emitting semiconductor laser characterized by: the N-face electrode structure comprises an N-face electrode (1) and a P-face electrode (7) which are arranged oppositely, a functional layer is arranged between the N-face electrode (1) and the P-face electrode (7), the functional layer comprises a substrate (2), an N-type distributed Bragg reflector (3), an active gain region (4), a first oxidation layer (5) and a P-type heavily-doped layer (6) which are sequentially arranged in a first direction, and the first direction is the direction from the N-face electrode (1) to the P-face electrode (7);
the P-surface electrodes are arranged on two sides of the P-surface reflector; the P-surface reflector comprises a second oxidation layer (8), a stress buffer layer (9) and a high-refractive-index sub-wavelength grating layer (10) which are sequentially arranged, the second oxidation layer (8), the stress buffer layer (9) and the high-refractive-index sub-wavelength grating layer (10) are sequentially arranged in the first direction, and a P-type heavily-doped layer (6) is arranged between the first oxidation layer (5) and the second oxidation layer (8).
2. A vertical cavity surface emitting semiconductor laser as claimed in claim 1 wherein: the thickness of the P-surface reflector is 400 nm-600 nm.
3. A vertical cavity surface emitting semiconductor laser as claimed in claim 1 wherein: the stress buffer layer (9) and the high-refractive-index sub-wavelength grating layer (10) are made of the same material.
4. A vertical cavity surface emitting semiconductor laser according to any one of claims 1 to 3, wherein: the P-type heavily doped layer (6) is arranged above the first oxide layer (5).
5. A vertical cavity surface emitting semiconductor laser according to claim 4, wherein: the first oxide layer (5) is a partial oxide layer, and the second oxide layer (8) is a complete oxide layer.
6. A vertical cavity surface emitting semiconductor laser according to claim 4, wherein: the stress buffer layer (9) is made of GaAs materials, and the high-refractive-index sub-wavelength grating layer (10) is made of GaAs materials.
7. A vertical cavity surface emitting semiconductor laser according to claim 4, wherein: the thickness of the stress buffer layer (9) is 100-200 nm, and the thickness of the high-refractive-index sub-wavelength grating layer (10) is 200-350 nm.
8. A method for preparing a vertical cavity surface emitting laser is characterized in that: the method comprises the following steps:
step 1: the epitaxial structure of the vertical cavity surface emitting laser is completed on the GaAs substrate by molecular beam epitaxial growth or metal organic chemical vapor deposition through a one-step growth technology;
step 2: etching the upper surface of the epitaxial wafer, performing shallow etching to just reach the P-type heavily-doped layer, and performing complete oxidation after the second oxide layer is just completely exposed;
and step 3: continuously etching until the first oxide layer is just completely exposed, and performing partial oxidation according to the size of the oxidation aperture;
and 4, step 4: and partially etching the high-refractive-index layer, wherein the etching depth is less than the thickness of the high-refractive-index layer, and a stress buffer layer and a high-refractive-index sub-wavelength grating layer are formed.
9. A vertical cavity surface emitting semiconductor laser according to claim 8, wherein: the etching depth of the step 2 is less than that of the step 3, but the width of the groove etched in the step 2 is greater than that of the groove etched in the step 3.
10. A vertical cavity surface emitting semiconductor laser according to claim 8, wherein: the shallow etching in the step 2 comprises photoetching and chemical etching.
CN201910968503.0A 2019-10-12 2019-10-12 Vertical cavity surface emitting semiconductor laser and preparation method thereof Pending CN110676689A (en)

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