CN110676392A - Spin organic electroluminescent device and manufacturing method thereof - Google Patents

Spin organic electroluminescent device and manufacturing method thereof Download PDF

Info

Publication number
CN110676392A
CN110676392A CN201910966922.0A CN201910966922A CN110676392A CN 110676392 A CN110676392 A CN 110676392A CN 201910966922 A CN201910966922 A CN 201910966922A CN 110676392 A CN110676392 A CN 110676392A
Authority
CN
China
Prior art keywords
spin
layer
electron
hole
vacuum heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910966922.0A
Other languages
Chinese (zh)
Inventor
牛连斌
关云霞
陈丽佳
杨明军
文林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing Normal University
Original Assignee
Chongqing Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing Normal University filed Critical Chongqing Normal University
Priority to CN201910966922.0A priority Critical patent/CN110676392A/en
Publication of CN110676392A publication Critical patent/CN110676392A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a spin organic electroluminescent device, which sequentially comprises a substrate, an anode, a hole buffer layer, a hole spin polarization injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron spin polarization injection layer, an electron buffer layer and a cathode. The invention synchronously changes the luminous brightness and the device efficiency according to the change of the magnetic field intensity, and can be applied to the detection of the magnetic field intensity by utilizing the synchronous change effect.

Description

Spin organic electroluminescent device and manufacturing method thereof
Technical Field
The invention relates to the technical field of organic semiconductor photoelectron, in particular to a spinning organic electroluminescent device and a manufacturing method of the spinning organic electroluminescent device.
Background
Theory and experimental research of organic electronics and development of organic electronics industry are the hot spots of much interest internationally. The first two-hundred century prize of nobel chemistry awarded blackger et al, rewarding them for significant contributions in conductive polymers and organic electronics. In the same year, the journal of Science also classified the progress of organic semiconductors as one of l0 scientific achievements in the current year. Particularly, the phenomenon that spontaneous spin polarization and carrier mobility of injected carriers in the organic semiconductor are regulated and controlled by a magnetic field and the like is found, and the organic semiconductor carriers are proved to have peculiar charge and spin characteristics.
The physical mechanism of the idea of Spin-controlled organic electroluminescent devices (Spin-OLEDs) is based on the bimolecular exciton luminescence theory: for conventional OLEDs, electroluminescence is the injection of electrons and holes from electrodes of opposite polarity, respectively, i.e. unpaired carrier injection (as opposed to photoexcitation directly producing singlet excitons), which form excitons followed by recombination radiative transitions. In this case, triplet and singlet excitons are generated simultaneously. According to the spin statistical theory analysis and experimental research, in the small molecule OLED, the ratio of singlet excitons to triplet excitons is about 1: 3. Combining the theories of a.h.davis and m.yunus, the physical mechanism is expressed as follows,
inside the conventional OLED light emitting layer, electrons (e ↓ ) and holes (p ↓, p ℃) may form four different exciton states,
e↓p↓+e↓p↑+e↑p↓+e↑p↑
＝T+1+(S+T0)*1/2+(S+T0)*1/2+T-1
＝S+T+1+T0+T-1
i.e., the ratio of singlet excitons S to triplet excitons T is 1: 3.
Since the transition from the triplet excited state to the ground state is spin forbidden, the triplet exciton of most organic small molecules has low luminous efficiency, and the maximum efficiency of the small molecule OLED is limited to 25% (relative to the photoluminescence efficiency of 100%).
However, if the spin directions of electrons and holes injected into the light emitting layer of the conventional small molecule organic electroluminescent device are all polarized, the exciton formation process is as follows,
e↑p↓
＝(S+T0)*1/2
＝S*1/2+T0*1/2
i.e., the ratio of singlet excitons S to triplet excitons T is 1: 1.
Therefore, if the spin state of the carrier injected into the light emitting layer of the device can be controlled by some method, the ratio between singlet excitons and triplet excitons can be increased, which is of great significance for improving the performance of the light emitting device.
Disclosure of Invention
The invention aims to provide a spin organic electroluminescent device to improve the current efficiency of the light-emitting device.
The invention provides a spin organic electroluminescent device, which sequentially comprises a substrate, an anode, a hole buffer layer, a hole spin polarization injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron spin polarization injection layer, an electron buffer layer and a cathode.
Preferably, the substrate is one of glass and flexible plastic transparent film, and the hole buffer layer is MnO3And V2O5One of the films.
Preferably, the hole spin-polarized injection layer is one of Cr, Fe, Co, Ni and alloy thin films thereof.
Preferably, the hole transport layer is one of NPB, TPD, and PVK films.
Preferably, the light-emitting layer is Alq3Liq, C545T, MEH-PPV, PFO film.
Preferably, the electron transport layer is C60、BCP、Alq3And Liq thin films.
Preferably, the electron spin-polarized injection layer is one of Fe, Co, Ni, Cr and alloy thin films thereof.
Preferably, the electron buffer layer is CsCl, NaCl, LiF, CsF, Cs2CO3One of the films.
Preferably, the cathode is one of aluminum and magnesium-silver alloy thin films.
The invention also discloses a manufacturing method of the spin organic electroluminescent device, which comprises the following steps:
step 1, providing a substrate;
step 2, sequentially forming an anode/a hole buffer layer/a hole spin polarization injection layer/a hole transport layer/a light emitting layer/an electron transport layer/an electron spin polarization injection layer/an electron buffer layer/a cathode on the substrate;
the hole buffer layer is deposited on the device anode by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.01-0.2 angstrom/second, and the deposition thickness is 5-30 nanometers; the hole spin polarization injection layer is deposited on the device hole buffer layer by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.01-0.1 angstrom/second, and the deposition thickness is 0.5-5 nanometers; the hole transport layer is deposited on the spin polarization injection layer by a vacuum heating evaporation method or a solution spin coating method, wherein the deposition speed of the vacuum heating evaporation method is 0.4-2 angstroms/second, the deposition thickness is 30-90 nanometers, the spin coating speed of the solution spin coating method is 800-3500 revolutions/minute, the deposition thickness is 8-65 nanometers, the luminescent layer is deposited on the hole transport layer by the vacuum heating evaporation method or the solution spin coating method, the deposition speed of the vacuum heating evaporation method is 0.2-0.9 angstroms/second, the deposition thickness is 25-95 nanometers, the spin coating speed of the solution spin coating method is 1200-3300 revolutions/minute, the deposition thickness is 30-85 nanometers, and the electron transport layer is deposited on the luminescent layer by the vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.3-2.2 angstroms/second, and the deposition thickness is 15-40 nanometers; the electron spin polarization injection layer is deposited on the electron transmission layer of the device by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.02-0.08 angstrom/second, and the deposition thickness is 0.6-4 nanometers; the electron buffer layer is deposited on the electron spin polarization injection layer of the device by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.3-1.5 angstroms/second, and the deposition thickness is 0.2-3 nanometers.
The invention has the beneficial effects that: holes of a hole buffer layer of the device are polarized through a hole spin polarization injection layer, most of the hole spin directions are polarized to be spin-up directions, and then the polarized holes reach a light-emitting layer of the device through a hole transport layer; at the same time, the electrons of the electron buffer layer of the device are polarized by the electron spin polarization injection layer, most of the electron spin direction is polarized to the spin downward direction, and then, the polarized electrons reach the light emitting layer of the device through the electron transport layer. These electrons and holes meet inside the light emitting material of the device, and the proportion of singlet excitons formed exceeds 25%, and the efficiency of the corresponding device increases. In addition, the luminous brightness and the device efficiency of the device are synchronously changed according to the change of the magnetic field intensity, and the device can be applied to the detection of the magnetic field intensity by utilizing the synchronous change effect.
Drawings
Fig. 1 is a schematic structural diagram of a spin organic electroluminescent device according to an embodiment of the present invention;
FIG. 2 is a graph of voltage versus current density for a spin organic electroluminescent device according to an embodiment of the present invention;
FIG. 3 is a graph of voltage versus luminance for a spin organic electroluminescent device according to an embodiment of the present invention;
FIG. 4 is a normalized electroluminescence spectrum of a spin organic electroluminescent device at a voltage of 9V according to an embodiment of the present invention;
FIG. 5 is a normalized electroluminescence spectrum of a spin organic electroluminescent device at a voltage of 10V according to an embodiment of the present invention;
FIG. 6 is a normalized electroluminescence spectrum of a spin organic electroluminescent device at a voltage of 11V according to an embodiment of the present invention;
FIG. 7 is a normalized electroluminescence spectrum of a spin organic electroluminescent device at a voltage of 12V according to an embodiment of the present invention;
FIG. 8 is a comparison of the coordinate systems of FIGS. 4, 5, 6 and 7 provided by embodiments of the present invention;
fig. 9 is a schematic diagram of the change of the luminous current efficiency of a spin organic electroluminescent device with the magnetic field under the bias voltages of 9V, 10V, 11V and 12V according to the embodiment of the present invention.
Detailed Description
The following is further detailed by the specific embodiments:
reference numerals in the drawings of the specification include: the light-emitting diode comprises a substrate 1, an anode 2, a hole buffer layer 3, a hole spin polarization injection layer 4, a hole transport layer 5, a light-emitting layer 6, an electron transport layer 7, an electron spin polarization injection layer 8, an electron buffer layer 9 and a cathode 10.
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment is basically as shown in the attached figure 1:
a spin organic electroluminescent device comprises a substrate 1, an anode 2, a hole buffer layer 3, a hole spin polarization injection layer 4, a hole transport layer 5, a luminescent layer 6, an electron transport layer 7, an electron spin polarization injection layer 8, an electron buffer layer 9 and a cathode 10 from bottom to top.
In at least one embodiment, the substrate 1 is one of glass and a flexible plastic transparent film.
In at least one embodiment, the anode 2 is an indium tin oxide thin film (ITO thin film) transparent electrode.
In at least one embodiment, the hole buffer layer 3 is MnO3And V2O5One of the films.
In at least one embodiment, the hole spin-polarization injection layer 4 is one of chromium (Cr), iron (Fe), cobalt (Co), and nickel (Ni), and an alloy thin film thereof.
In at least one embodiment, the hole transport layer 5 is one of NPB, TPD, and PVK film.
In at least one embodiment, light emitting layer 6 is Alq3Liq, C545T, MEH-PPV and PFO film.
In at least one implementationIn the example, the electron transport layer 7 is C60、BCP、Alq3And a Liq thin film.
In at least one embodiment, the electron spin-polarized injection layer 8 is one of iron (Fe), cobalt (Co), nickel (Ni), and chromium (Cr), and alloy thin films thereof.
In at least one embodiment, the electron buffer layer 9 is CsCl, NaCl, LiF, CsF, and Cs2CO3One of the films.
In at least one embodiment, the cathode 10 is one of aluminum, magnesium silver alloy thin films.
In at least one embodiment, the substrate 1 may be K9 glass.
In at least one embodiment, the anode 2 is an indium tin oxide thin film (ITO thin film) transparent electrode.
In at least one embodiment, the hole buffer layer 3 is MnO3A film.
In at least one embodiment, the hole spin-polarized injection layer 4 is an iron (Fe) thin film.
In at least one embodiment, the hole transport layer 5 is an NPB film.
In at least one embodiment, light emitting layer 6 is Alq3A film.
In at least one embodiment, the electron transport layer 7 is Alq3A film.
In at least one embodiment, the electron spin-polarized injection layer 8 is a cobalt (Co) thin film.
In at least one embodiment, the electron buffer layer 9 is a CsCl thin film.
In at least one embodiment, cathode 10 is an aluminum (Al) film.
It is understood that the present invention polarizes holes of the device hole buffer layer 3 by the hole spin polarization injection layer 4, and most of the hole spin direction is polarized to the spin up direction. These polarized holes then reach the device light-emitting layer via the hole transport layer 5; at the same time, the electrons of the device electron buffer layer 9 are polarized by the electron spin polarization injection layer 8, most of the electron spin direction is polarized to the spin downward direction, and then, these polarized electrons reach the device light emitting layer 6 through the electron transport layer. These electrons and holes meet inside the light emitting material of the device, and the proportion of singlet excitons formed exceeds 25%, and the efficiency of the corresponding device increases.
The method specifically comprises the following steps:
as shown in FIG. 2, the spin organic electroluminescent device shows good diode rectification characteristics under the bias voltage of 12V-24V. The current density of the device is 5.006mA/cm at 13V2(ii) a The current density of the device is 34.25mA/cm at 20V2。
As shown in fig. 3, the device luminance shows an exponential trend with increasing voltage under the bias of 12V-23V. The device reached a maximum brightness at 23V and then the device brightness began to decay.
Fig. 4, 5, 6 and 7 are normalized electroluminescence spectra of the devices at voltages of 9V, 10V, 11V and 12V, respectively. Fig. 8 is a comparison of fig. 4, 5, 6 and 7 placed in the same coordinate system. As can be seen from fig. 8, fig. 4, 5, 6 and 7 are completely coincident, and the peak wavelength of the spectrum is 520 nm. It can be seen that the electroluminescence spectrum of the device does not change with changes in bias voltage.
Fig. 9 is a graph showing the variation of the luminous current efficiency of the device with magnetic field at bias voltages of 9V, 10V, 11V and 12V. It can be seen from the figure that at the same voltage, at 0-120mT, the luminous efficiency of the device is also continuously increased with the increase of the magnetic field. The device efficiency slowly shows signs of saturation after the magnetic field exceeds 120 mT. For example, at the bias voltage of 9V and at 120mT, the current efficiency of the device is increased by 3.88%. Under the same magnetic field, the increase value of the current efficiency of the device is reduced along with the increase of the voltage. The current efficiency of the device increases by 3.59%, 3.02%, 2.56% and 2.07% at bias voltages of 9V, 10V, 11V and 12V, as at 90 mT.
The embodiment also provides a manufacturing method for manufacturing the spin organic electroluminescent device, which comprises the following steps:
step 1: providing a substrate;
step 2: and sequentially forming an anode, a hole buffer layer, a hole spin polarization injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron spin polarization injection layer, an electron buffer layer and a cathode on the substrate by a vacuum heating evaporation method.
In at least one embodiment, the hole buffer layer is deposited on the device anode by a vacuum thermal evaporation method: wherein the deposition speed of the vacuum heating evaporation method is 0.01-0.2 angstrom/second, and the deposition thickness is 5-30 nanometers.
In at least one embodiment, the hole spin-polarized injection layer is deposited on the device hole buffer layer by a vacuum thermal evaporation method: wherein the deposition speed of vacuum heating evaporation is 0.01-0.1 angstrom/s, and the deposition thickness is 0.5-5 nm.
In at least one embodiment, the hole transport layer is deposited on the spin-polarized injection layer by a vacuum thermal evaporation method or solution spin coating: wherein the deposition speed of the vacuum heating evaporation method is 0.4-2 angstrom/s, the deposition thickness is 30-90 nm, the spin coating speed of the solution spin coating method is 800-.
In at least one embodiment, the light emitting layer is deposited on the hole transport layer by vacuum thermal evaporation method or solution spin coating: wherein the deposition speed of the vacuum heating evaporation method is 0.2-0.9 angstrom/second, the deposition thickness is 25-95 nanometers, the spin coating speed of the solution spin coating method is 1200 and 3300 revolutions per minute, and the deposition thickness is 30-85 nanometers.
In at least one embodiment, the electron transport layer is deposited on the light emitting layer by a vacuum thermal evaporation method: wherein the deposition speed of the vacuum heating evaporation method is 0.3-2.2 angstroms/second, and the deposition thickness is 15-40 nanometers.
In at least one embodiment, the electron spin-polarized injection layer is deposited on the device electron transport layer by a vacuum thermal evaporation method: wherein the deposition speed of the vacuum heating evaporation method is 0.02-0.08 angstrom/second, and the deposition thickness is 0.6-4 nanometers.
In at least one embodiment, the electron buffer layer is deposited on the device electron spin polarization injection layer by a vacuum thermal evaporation method: wherein the deposition speed of the vacuum heating evaporation method is 0.3-1.5 angstrom/second, and the deposition thickness is 0.2-3 nm.
The spin organic electroluminescent device manufactured by the manufacturing method of the spin organic electroluminescent device provided by the invention polarizes holes of a hole buffer layer of the device through a hole spin polarization injection layer, most of the hole spin directions are polarized into spin-up directions, and then the polarized holes reach a light emitting layer of the device through a hole transport layer; at the same time, the electrons of the electron buffer layer of the device are polarized by the electron spin polarization injection layer, most of the electron spin direction is polarized to the spin downward direction, and then, the polarized electrons reach the light emitting layer of the device through the electron transport layer. These electrons and holes meet inside the light emitting material of the device, the ratio of singlet excitons formed is higher, and the efficiency of the corresponding device is increased. In addition, the luminous brightness and the device efficiency of the device are synchronously changed relative to the change of the magnetic field intensity, and the synchronous change effect can be used for detecting the magnetic field intensity.
The foregoing is merely an example of the present invention, and common general knowledge in the field of known specific structures and characteristics is not described herein in any greater extent than that known in the art at the filing date or prior to the priority date of the application, so that those skilled in the art can now appreciate that all of the above-described techniques in this field and have the ability to apply routine experimentation before this date can be combined with one or more of the present teachings to complete and implement the present invention, and that certain typical known structures or known methods do not pose any impediments to the implementation of the present invention by those skilled in the art. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several changes and modifications can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicability of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.

Claims (10)

1. A spin organic electroluminescent device characterized by: the device structure sequentially comprises a substrate, an anode, a hole buffer layer, a hole spin polarization injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron spin polarization injection layer, an electron buffer layer and a cathode.
2. A spin organic electroluminescent device according to claim 1, wherein: the substrate is one of glass and flexible plastic transparent film, and the hole buffer layer is MnO3And V2O5One of the films.
3. A spin organic electroluminescent device according to claim 1 or 2, wherein: the hole spin-polarized injection layer is one of Cr, Fe, Co, Ni and alloy films thereof.
4. A spin organic electroluminescent device according to claim 3, wherein: the hole transport layer is one of NPB, TPD and PVK films.
5. A spin organic electroluminescent device according to any one of claims 1, 2 or 4, wherein: the luminescent layer is Alq3Liq, C545T, MEH-PPV, PFO film.
6. A spin organic electroluminescent device according to claim 5, wherein: the electron transport layer is C60、BCP、Alq3And Liq thin films.
7. A spin organic electroluminescent device according to any one of claims 1, 2, 4 or 6, wherein: the electron spin polarization injection layer is one of Fe, Co, Ni, Cr and alloy films thereof.
8. A spin organic electroluminescent device according to claim 7, wherein: the electronic buffer layer is CsCl, NaCl, LiF, CsF and Cs2CO3One of the films.
9. A spin organic electroluminescent device according to any one of claims 1, 2, 4, 6 or 8, wherein: the cathode is one of aluminum and magnesium-silver alloy films.
10. A method of fabricating a spin organic electroluminescent device as claimed in claims 1 to 9, wherein: the method comprises the following steps:
step 1, providing a substrate;
step 2, sequentially forming an anode/a hole buffer layer/a hole spin polarization injection layer/a hole transport layer/a light emitting layer/an electron transport layer/an electron spin polarization injection layer/an electron buffer layer/a cathode on the substrate;
the hole buffer layer is deposited on the device anode by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.01-0.2 angstrom/second, and the deposition thickness is 5-30 nanometers; the hole spin polarization injection layer is deposited on the device hole buffer layer by a vacuum heating evaporation and evaporation method, wherein the deposition speed of the vacuum heating evaporation and evaporation is 0.01-0.1 angstrom/second, and the deposition thickness is 0.5-5 nanometers; the hole transport layer is deposited on the spin polarization injection layer by a vacuum heating evaporation method or solution spin coating, wherein the deposition speed of the vacuum heating evaporation method is 0.4-2 angstroms/second, the deposition thickness is 30-90 nanometers, the spin coating speed of the solution spin coating method is 800-3500 revolutions/minute, the deposition thickness is 8-65 nanometers, the luminescent layer is deposited on the hole transport layer by the vacuum heating evaporation method or solution spin coating, the deposition speed of the vacuum heating evaporation method is 0.2-0.9 angstroms/second, the deposition thickness is 25-95 nanometers, the spin coating speed of the solution spin coating method is 1200-3300 revolutions/minute, the deposition thickness is 30-85 nanometers, the electron transport layer is deposited on the luminescent layer by the vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.3-2.2 angstroms/second, and the deposition thickness is 15-40 nanometers; the electron spin polarization injection layer is deposited on the electron transmission layer of the device by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.02-0.08 angstrom/second, and the deposition thickness is 0.6-4 nanometers; the electron buffer layer is deposited on the electron spin polarization injection layer of the device by a vacuum heating evaporation method, wherein the deposition speed of the vacuum heating evaporation method is 0.3-1.5 angstroms/second, and the deposition thickness is 0.2-3 nanometers.
CN201910966922.0A 2019-10-12 2019-10-12 Spin organic electroluminescent device and manufacturing method thereof Pending CN110676392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910966922.0A CN110676392A (en) 2019-10-12 2019-10-12 Spin organic electroluminescent device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910966922.0A CN110676392A (en) 2019-10-12 2019-10-12 Spin organic electroluminescent device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN110676392A true CN110676392A (en) 2020-01-10

Family

ID=69081876

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910966922.0A Pending CN110676392A (en) 2019-10-12 2019-10-12 Spin organic electroluminescent device and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN110676392A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296224A (en) * 2003-03-26 2004-10-21 National Institute Of Advanced Industrial & Technology Light emitting element
JP2008166034A (en) * 2006-12-27 2008-07-17 Nippon Hoso Kyokai <Nhk> Light-emitting element and display device
CN101661995A (en) * 2009-09-29 2010-03-03 吉林大学 Organic electroluminescent device capable of forming spin-polarized injection
US20150162557A1 (en) * 2012-07-05 2015-06-11 The University Of Utah Research Foundation Spin-polarized light-emitting diodes based on organic bipolar spin valves
CN109411616A (en) * 2018-11-02 2019-03-01 京东方科技集团股份有限公司 Display panel and display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296224A (en) * 2003-03-26 2004-10-21 National Institute Of Advanced Industrial & Technology Light emitting element
JP2008166034A (en) * 2006-12-27 2008-07-17 Nippon Hoso Kyokai <Nhk> Light-emitting element and display device
CN101661995A (en) * 2009-09-29 2010-03-03 吉林大学 Organic electroluminescent device capable of forming spin-polarized injection
US20150162557A1 (en) * 2012-07-05 2015-06-11 The University Of Utah Research Foundation Spin-polarized light-emitting diodes based on organic bipolar spin valves
CN109411616A (en) * 2018-11-02 2019-03-01 京东方科技集团股份有限公司 Display panel and display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
杨光: ""控制载流子自旋态改善有机电致发光器件性能的研究 "", 《中国优秀博硕士学位论文全文数据库(硕士)基础科学辑》 *

Similar Documents

Publication Publication Date Title
Kido et al. Bright red light‐emitting organic electroluminescent devices having a europium complex as an emitter
JP2701738B2 (en) Organic thin film EL device
JP3249297B2 (en) Organic electroluminescent device
KR101149703B1 (en) Organic light emitting diode with nano-dots and fabrication method thereof
CN101305071A (en) Organic electroluminescent device and method for preparing the same
Qiu et al. Dependence of the current and power efficiencies of organic light-emitting diode on the thickness of the constituent organic layers
JP4764328B2 (en) Light emitting element and display device
TW200810111A (en) Transistor element and its fabrication process, light emitting element, and display
Kalyani et al. Fabrication of red organic light emitting diodes (OLEDs) using EuxY (1-x)(TTA) 3Phen organic complexes for solid state lighting
CN100470877C (en) Organic electro phosphorescent device and its preparation method
CN100440576C (en) Organic electroluminescence device
JP2666428B2 (en) Organic thin film EL device
CN206293474U (en) The enhanced blue light organic emissive diode of plasma resonance
JPH02305886A (en) Organic thin-film el element
Ohta et al. Active matrix driving organic light-emitting diode panel using organic thin-film transistors
CN110676392A (en) Spin organic electroluminescent device and manufacturing method thereof
JP3482446B2 (en) EL device
Lam et al. Selective doping of multilayer organic light emitting devices
US8384067B2 (en) Hybrid organic/nanoparticle devices
JP5282045B2 (en) Transistor element, electronic device, light emitting element, and display
KR101007653B1 (en) Organic Light Emitting Diode Device
Wang et al. Efficient white organic light-emitting devices using a thin 4, 4′-bis (2, 2′-diphenylvinyl)-1, 1′-diphenyl layer
JP3664069B2 (en) Organic electroluminescence device
JP3736881B2 (en) Organic thin film EL device
JPH1126164A (en) Organic electroluminescent element

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination