CN110674609B - Simulation acquisition method for depth of etched groove in each region of layout - Google Patents
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Abstract
The invention discloses a simulation acquisition method of etching groove depth in each region of a layout, which comprises the following steps: dividing the layout by taking the independent polygons as units; calculating the weight line width of each independent polygon; substituting the weight line width of each independent polygon into an etching model to calculate a first etching groove depth corresponding to each independent polygon; dividing the layout by a pane dividing method; calculating the etching groove depth of each pane, which comprises the following steps: taking the depth of the sub-graph etching groove corresponding to each sub-graph in the pane as the depth of the first etching groove of the independent polygon; and taking the area of each sub-graph as a weight, and carrying out weighted average on the etched groove depth of the sub-graph corresponding to each sub-graph in the pane to obtain the etched groove depth of the pane. The method can avoid the deviation between the etched groove depth and the actual groove depth which are directly calculated by taking the pane as a unit; the accuracy of the chemical mechanical polishing process model can be improved.
Description
Technical Field
The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for obtaining the simulation of the depth of an etched groove in each region of a layout.
Background
In the process of Chemical Mechanical Polishing (CMP) process Model establishment, in order to accurately reflect the longitudinal etching load effect of patterns with different sizes, namely the change of the etching groove depth along with the line width of the patterns, an etching Model (Etch Model) is generally introduced in the process of Model establishment to obtain the etching groove depths corresponding to patterns with different line widths. The etching model can reflect the change relation between the depth of the etching groove and the line width of the pattern, as shown in fig. 1, and is an etching model curve, the etching model corresponds to etching processes, each etching process corresponds to one etching model, curve 101 corresponds to an etching model curve of one etching process, and as can be seen from fig. 1, the curve 101 has a region in which the depth of the etching groove linearly changes along with the line width of the pattern in a region between the dashed line AA and the dashed line BB, i.e. between the line width of the pattern and 0.02 μm and 2 μm, and the depth of the etching groove tends to be saturated and unchanged when the line width of the pattern is smaller than 0.02 μm or larger than 2 μm.
The depth of the etched groove in the existing chemical mechanical polishing process simulation is obtained by extracting line width values in units of panes and then introducing an etching model, and as shown in fig. 2, the method is a flow chart of a simulation obtaining method of the depth of the etched groove in each region of the existing layout; the simulation acquisition method of the depth of the etched groove in each area of the existing layout comprises the following steps:
and step one, dividing the layout by adopting a pane dividing method.
FIG. 3A is a schematic diagram of a conventional method for performing pane segmentation on a graph of a layout; one graphic 201 of the layout is shown in FIG. 3A, and two panes are shown in pane splitting graphic 202, separated by a dashed line DD and represented by pane A and pane B, respectively.
It can be seen that the graphic 201 is split into two sub-graphics, sub-graphic 201a and sub-graphic 201B, respectively, by pane a and pane B. The line width of the sub-pattern 201a is w201, and the line width of the sub-pattern 201b is w202.
Step two, calculating the weight line width of each pane, wherein the calculating method comprises the following steps: taking the area of each sub-graph in the pane as a weight, and carrying out weighted average on the line width corresponding to each sub-graph included in the pane to obtain a weighted line width, wherein the formula of the weighted average is as follows:
wherein LW weighted Representing the weighted line width of the pane, x representing the number of the sub-graphics, y representing the number of sub-graphics within the pane, LW x For the line width of the sub-graph corresponding to the number x, S x And the area of the sub-graph corresponding to the number x is represented.
Also taking fig. 3A as an example, the pane a includes only one sub-graph 201a, so the weighted line width of the pane a is w201; likewise, the weighted linewidth of pane B is w202.
Substituting the weight line width of each pane into the etching model to calculate the pane etching groove depth of the pane.
The above-described prior art methods have drawbacks, and are now described as follows:
in general, a polygon of a layout is cut by different panes, and the line width of the cut graph is changed. The example shown in fig. 3A is an example with a defect, and it can be seen that the line width of the pattern 201 is actually w201, and after the pane segmentation is performed, the line width of the sub-pattern 201a remains w201, but the line width of the sub-pattern 201b changes to w202. Therefore, the existing method has the situation that the line width of the sub-graph is different from that before the graph is segmented.
And extracting line width which is not in accordance with the actual situation by taking the pane as a unit, and finally or causing the calculated depth of the etched groove to be different from the actual situation. FIG. 3B is a schematic view of a trench profile and etched trench depth along the line CC in FIG. 3A obtained by the prior art method; as can be seen from fig. 3B, after the calculation in the step three of the prior method, the depth of the etched groove of the pane in the pane a is d201, and d201 is obtained by combining the line width w201 of the sub-graph 201a with the etching model; the depth of the etching groove of the pane B is d202, and d202 is obtained by combining the line width w202 of the sub-graph 201B with an etching model. It can be seen that d202 will be greater than d201. In some cases, d202 is very different from d201 when w201 and w202 satisfy the relationship of the first linewidth value and the second linewidth value of the linear region in the etch model. However, in the actual etching process, the etched groove depths of the sub-patterns 201a and 201b are the same, so that the conventional method has the technical problem that the simulated pane etched groove depth and the actual etched groove depth have differences, and the differences can further cause inaccurate chemical mechanical polishing model.
Disclosure of Invention
The invention aims to provide a simulation acquisition method for the depth of an etched groove in each region of a layout, which can avoid deviation between the depth of the etched groove and the actual depth of the groove calculated by directly taking a pane as a unit; the accuracy of the cmp process model can also be improved when applied to the cmp process model modeling.
In order to solve the technical problems, the simulation acquisition method for the depth of the etched groove in each region of the layout provided by the invention comprises the following steps:
the first step, a layout is composed of a plurality of graphs, the contour line of each graph is a corresponding independent polygon, and each independent polygon is used as a corresponding unit to divide the layout.
And step two, calculating the weight line width of each independent polygon.
Substituting the weight line width of each independent polygon into an etching model to calculate the first etching groove depth corresponding to each independent polygon.
And fourthly, dividing the layout into a plurality of panes with the same size by adopting a pane dividing method, wherein the graph corresponding to each independent polygon is divided into more than one sub-graph positioned in the corresponding pane.
Calculating the depth of the etching groove of each pane, wherein the method comprises the following sub-steps:
and 51, taking the etched groove depth of the sub-graph corresponding to each sub-graph included in the pane as the first etched groove depth of the independent polygon to which each sub-graph belongs.
And 52, taking the area of each sub-graph as a weight, and carrying out weighted average on the etched groove depth of each sub-graph corresponding to each sub-graph included in the pane to obtain the etched groove depth of the pane.
The further improvement is that the step two comprises the following sub-steps:
and step 21, segmenting the corresponding independent polygon into a plurality of segmentation rectangles according to the principle of area maximization.
And 22, taking the area of each cut rectangle in the independent polygon as weight, and carrying out weighted average on the line width of each cut rectangle to obtain the weight line width of the independent polygon.
A further improvement is that the weighted average formula of step 22 is:
wherein LW weighted Representing the independent multipleThe weighted line width of the polygon, i represents the number of the split rectangle, n represents the number of the split rectangle in the independent polygon, LW i Line width S of the segmentation rectangle corresponding to the number i i And the area of the segmentation rectangle corresponding to the number i is represented.
A further improvement is that the weighted average formula of step 52 is:
wherein TD represents the depth of the etched groove of the pane, j represents the number of the sub-graphics in the pane, m represents the number of the sub-graphics in the pane, TD j Etching the depth of the groove for the sub-pattern of the sub-pattern corresponding to the number j, S j And the area of the sub-graph corresponding to the number j is represented.
The further improvement is that the etched groove depth of each pane forms etched groove depth distribution in each area of the layout, and the etched groove depth distribution is used for modeling of a chemical mechanical polishing process model.
The further improvement is that the etching model is a pattern etching groove depth changing model along with the line width of the pattern.
A further improvement is that the etching model comprises a first saturation region, a linear region and a second saturation region; the line width value of the linear region is between a first line width value and a second line width value, the line width value of the first saturation region is smaller than the first line width value, and the line width value of the second saturation region is larger than the second line width value.
In the linear region, the depth of the etched groove linearly changes along with the line width of the graph; and the depth of the etched groove in the first saturation region and the second saturation region tends to 0 along with the change of the line width of the graph, namely the depth of the etched groove is basically unchanged.
A further improvement is that the etching model corresponds to etching processes, each of the etching processes corresponds to one of the etching models.
The further improvement is that the etching model is obtained by measuring the depth of the etching groove corresponding to each line width after the wafer is actually etched by adopting the etching process.
Compared with the prior art that the weight line width in the pane is formed by directly taking the actual line width of the sub-graph in each pane when the pane is cut into the layout, the method increases the calculation error generated by taking the independent polygons corresponding to the contour lines of the graphs as units in the prior art to divide the layout and calculate the weight line width of each independent polygon, then calculates the etching groove depth corresponding to each independent polygon, namely the first etching groove depth, on the basis of the weight line width of each independent polygon, then cuts the pane of the layout, and calculates the etching groove depth in each pane, namely the pane etching groove depth, on the basis of the first etching groove depth, and because the calculation of the weight line width of each independent polygon and the first etching groove depth is placed before the pane cutting, the method can eliminate the calculation error generated by the line width of each graph when the pane is cut into the prior art, thereby avoiding the deviation between the etching groove depth and the actual groove depth, which are directly calculated by taking the units, and improving the accuracy of the simulation of the pane etching groove depth; the accuracy of the chemical mechanical polishing process model can also be improved when the invention is applied to the modeling of the chemical mechanical polishing process model.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is an etch model curve;
FIG. 2 is a flow chart of a method for simulated acquisition of etched trench depth in regions of a prior art layout;
FIG. 3A is a schematic diagram of a prior art method for pane segmentation of a layout graphic;
FIG. 3B is a schematic diagram of a trench cross-section and etched trench depth taken along line CC in FIG. 3A using a prior art method;
FIG. 4 is a flow chart of a method for simulated acquisition of etched trench depth in regions of a layout in accordance with an embodiment of the present invention;
fig. 5A-5D are schematic diagrams of layouts in various steps of embodiments of the present invention.
Detailed Description
FIG. 4 is a flow chart of a method for obtaining the depth of etched trenches in each region of a layout according to an embodiment of the present invention; 5A-5D, which are schematic diagrams of layouts in various steps of embodiments of the present invention; the simulation acquisition method of the depth of the etched groove in each region of the layout comprises the following steps:
the first step, a layout is composed of a plurality of graphs, the contour line of each graph is a corresponding independent polygon, and each independent polygon is used as a corresponding unit to divide the layout. As shown in fig. 5A, two of the independent polygons are shown in fig. 5A, labeled with references 1a and 1b, respectively.
Step two, calculating the weight line width of each independent polygon, which comprises the following sub-steps:
and step 21, segmenting the corresponding independent polygon into a plurality of segmentation rectangles according to the principle of area maximization.
For example: in fig. 5B, the independent polygon 1a is a rectangle, so that no further segmentation is required. The independent polygon 1b is then split into 3 split rectangles, labeled 1b1, 1b2 and 1b3, respectively.
And 22, taking the area of each cut rectangle in the independent polygon as weight, and carrying out weighted average on the line width of each cut rectangle to obtain the weight line width of the independent polygon. The weighted average formula of step 22 is:
wherein LW weighted Weight line width of the independent polygon, i represents the number of the split rectangle, n represents the number of the split rectangle in the independent polygon, LW i Line width S of the segmentation rectangle corresponding to the number i i Representing the cut rectangle corresponding to the number iArea.
Taking two of the independent polygons shown in fig. 5B as an example:
since the independent polygon 1a is rectangular, it is not required to be segmented, and the weight line width is as follows:
wherein LW 1a LW representing the independent polygon 1a weighted ，w 4 Representing the line width, S, of the independent polygon 1a 4 Representing the area of the independent polygon 1 a.
For the independent polygon 1b, since it is segmented into the segmented rectangles 1b1, 1b2 and 1b3 according to the area maximization principle in step 21, it can be calculated according to the above weight line width calculation formula:
wherein LW 1b LW representing the independent polygon 1b weighted ，w 1 Represents the line width S of the split rectangle 1b1 1 The area divided into the cut rectangles 1b1, w 2 Representing the line width S of the split rectangle 1b2 2 The area divided into the cut rectangles 1b2, w 3 Representing the line width S of the split rectangle 1b3 3 The area divided into the cut rectangles 1b3 is shown.
Substituting the weight line width of each independent polygon into an etching model to calculate the first etching groove depth corresponding to each independent polygon.
The etching model is a model of the change of the depth of the etching groove of the graph along with the line width of the graph.
The etching model comprises a first saturation region, a linear region and a second saturation region; the line width value of the linear region is between a first line width value and a second line width value, the line width value of the first saturation region is smaller than the first line width value, and the line width value of the second saturation region is larger than the second line width value.
In the linear region, the depth of the etched groove linearly changes along with the line width of the graph; and the variation of the depth of the etched groove along with the line width of the pattern in the first saturation region and the second saturation region tends to 0, namely the depth of the etched groove is basically kept unchanged along with the line width of the pattern.
The etching model corresponds to etching processes, and each etching process corresponds to one etching model.
And the etching model is obtained by measuring the depth of the etched groove corresponding to each line width after the wafer is actually etched by adopting the etching process.
As shown in fig. 1, there is an etching model curve, the etching model and the etching process correspond, each of the etching processes corresponds to one of the etching models, the curve 101 corresponds to an etching model curve of one of the etching processes, and as can be seen from fig. 1, there is a region where the depth of the etched trench linearly varies with the line width of the pattern in a region between the broken line AA to the broken line BB, i.e., the line width of the pattern is between 0.02 μm and 2 μm, and the depth of the etched trench tends to be saturated when the line width of the pattern is smaller than 0.02 μm or larger than 2 μm. The linear region corresponds to the linear region between the broken line AA and the broken line BB, the region on the left of the broken line AA corresponds to the first saturation region, and the region on the right of the broken line BB corresponds to the second saturation region.
A specific function can be obtained through an etching model curve, and the etching groove depths of the independent polygons 1a and 1b, namely the first etching groove depths, are respectively:
TD A ＝E(LW 1a )；
TD B ＝E(LW 1b )。
TD A representing the depth of the first etched trench of the independent polygon 1a, TD B Representing the first etched trench depth of the individual polygon 1b.
And fourthly, dividing the layout into a plurality of panes with the same size by adopting a pane dividing method, wherein the graph corresponding to each independent polygon is divided into more than one sub-graph, namely one or more sub-graphs positioned in the corresponding pane.
As shown in fig. 5C, 9 panes are displayed in pane cut graphic 2, each separated by a dashed line and represented by pane a, pane B, pane C, pane D, pane E, pane F, pane G, pane H, and pane I, respectively.
It can be seen that the independent polygon 1a is divided into four sub-graphics and is located in pane D, pane E, pane G and pane H, respectively; the sub-graphics into which the independent polygon 1B is divided are located in pane a, pane B, pane C, pane D, pane E, pane F, pane H, and pane I, respectively.
Calculating the depth of the etching groove of each pane, wherein the method comprises the following sub-steps:
and 51, taking the etched groove depth of the sub-graph corresponding to each sub-graph included in the pane as the first etched groove depth of the independent polygon to which each sub-graph belongs.
Taking fig. 5D as an example, the pane H corresponding to the mark 2H includes two sub-graphics, and the two sub-graphics are respectively marked by marks 2H1 and 2H 2; it can be seen that the sub-graph 2h1 belongs to the independent polygon 1a, and the sub-graph 2h2 belongs to the independent polygon 1b; so the depth of the etched groove of the sub-pattern corresponding to the sub-pattern 2h1 is taken as TD A The depth of the etched groove of the sub-pattern corresponding to the sub-pattern 2h2 is taken as TD B 。
And 52, taking the area of each sub-graph as a weight, and carrying out weighted average on the etched groove depth of each sub-graph corresponding to each sub-graph included in the pane to obtain the etched groove depth of the pane.
The weighted average formula of step 52 is:
wherein TD represents the depth of the etched groove of the pane, j represents the number of the sub-graphics in the pane, and m represents the number of the sub-graphics in the pane，TD j Etching the depth of the groove for the sub-pattern of the sub-pattern corresponding to the number j, S j And the area of the sub-graph corresponding to the number j is represented.
Taking pane H in fig. 5D as an example, the window H includes sub-patterns 2H1 and 2H2, and the corresponding sub-pattern etched groove depths are TD respectively A And TD (time division) B The weighted average formula substituted into step 52 may be:
wherein TD H A pane etched groove depth representing the pane H, S a Representing the area of the sub-graph corresponding to the sub-graph 2h1, S b And representing the area of the sub-graph corresponding to the sub-graph 2h 2.
Finally, the pane etched trench depth of each pane forms an etched trench depth profile within each region of the layout, which is typically used for modeling of a chemical mechanical polishing process model.
Compared with the prior art that the weight line width in the pane is formed by directly taking the actual line width of the sub-graph in each pane when the pane is cut into the layout, the embodiment of the invention increases the independent polygons corresponding to the contour lines of the graph before the pane is cut into the layout, divides the layout and calculates the weight line width of each independent polygon, then calculates the etching groove depth corresponding to each independent polygon, namely the first etching groove depth, on the basis of the weight line width of each independent polygon, then cuts the pane of the layout, and calculates the etching groove depth in each pane, namely the pane etching groove depth, on the basis of the first etching groove depth, and because the weight line width of each independent polygon and the calculation of the first etching groove depth are placed before the pane is cut into the pane, the calculation error of the line width of each graph when the pane is cut into the prior art can be eliminated, so the embodiment of the invention can avoid the deviation between the etching groove depth and the actual groove depth, which are directly calculated by the pane as units, and the simulation accuracy of the pane etching groove depth can be improved; the accuracy of the chemical mechanical polishing process model can also be improved when the embodiment of the invention is applied to modeling of the chemical mechanical polishing process model.
The present invention has been described in detail by way of specific examples, but these should not be construed as limiting the invention. Many variations and modifications may be made by one skilled in the art without departing from the principles of the invention, which is also considered to be within the scope of the invention.
Claims (6)
1. A simulation acquisition method for the depth of an etched groove in each region of a layout is characterized by comprising the following steps:
the method comprises the steps that firstly, a layout is composed of a plurality of graphs, the contour line of each graph is a corresponding independent polygon, and the layout is divided by taking each independent polygon as a corresponding unit;
step two, calculating the weight line width of each independent polygon;
the second step comprises the following sub-steps:
step 21, dividing the corresponding independent polygon into a plurality of divided rectangles according to the principle of area maximization;
step 22, taking the area of each cut rectangle in the independent polygon as weight, and carrying out weighted average on the line width of each cut rectangle to obtain the weight line width of the independent polygon;
the weighted average formula of step 22 is:
wherein LW weighted Weight line width of the independent polygon, i represents the number of the split rectangle, n represents the number of the split rectangle in the independent polygon, LW i Line width S of the segmentation rectangle corresponding to the number i i Representing the area of the segmentation rectangle corresponding to the number i;
substituting the weight line width of each independent polygon into an etching model to calculate a first etching groove depth corresponding to each independent polygon;
the etching model is a model of the change of the depth of the etching groove of the graph along with the line width of the graph;
dividing the layout into a plurality of panes with the same size by adopting a pane dividing method, wherein the graph corresponding to each independent polygon is divided into more than one sub-graph positioned in the corresponding pane;
calculating the depth of the etching groove of each pane, wherein the method comprises the following sub-steps:
step 51, taking the etched groove depth of the sub-graph corresponding to each sub-graph included in the pane as the first etched groove depth of the independent polygon to which each sub-graph belongs;
step 52, taking the area of each sub-graph as a weight, and carrying out weighted average on the etched groove depth of each sub-graph corresponding to each sub-graph included in the pane to obtain the etched groove depth of the pane;
the weighted average formula of step 52 is:
wherein TD represents the depth of the etched groove of the pane, j represents the number of the sub-graphics in the pane, m represents the number of the sub-graphics in the pane, TD j Etching the depth of the groove for the sub-pattern of the sub-pattern corresponding to the number j, S j And the area of the sub-graph corresponding to the number j is represented.
2. The simulated acquisition method of the depth of the etched trench in each region of the layout according to claim 1, wherein: the pane etched groove depth of each pane forms etched groove depth distribution in each region of the layout, and the etched groove depth distribution is used for modeling of a chemical mechanical polishing process model.
3. The simulated acquisition method of the depth of the etched trench in each region of the layout according to claim 1, wherein: the etching model comprises a first saturation region, a linear region and a second saturation region; the line width value of the linear region is between a first line width value and a second line width value, the line width value of the first saturation region is smaller than the first line width value, and the line width value of the second saturation region is larger than the second line width value.
4. A method for simulated acquisition of etched trench depth in regions of a layout as claimed in claim 3, wherein: in the linear region, the depth of the etched groove linearly changes along with the line width of the graph; the depth of the etched groove in the first saturation region and the second saturation region changes along with the line width of the graph to be 0.
5. A method for simulated acquisition of etched trench depth in regions of a layout as claimed in claim 3, wherein: the etching model corresponds to etching processes, and each etching process corresponds to one etching model.
6. The method for obtaining the simulation of the depth of the etched groove in each region of the layout according to claim 5, wherein: and the etching model is obtained by measuring the depth of the etched groove corresponding to each line width after the wafer is actually etched by adopting the etching process.
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