CN110670128B - Automatic equipment for epitaxial treatment of wafer and operation method thereof - Google Patents
Automatic equipment for epitaxial treatment of wafer and operation method thereof Download PDFInfo
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- CN110670128B CN110670128B CN201910769316.XA CN201910769316A CN110670128B CN 110670128 B CN110670128 B CN 110670128B CN 201910769316 A CN201910769316 A CN 201910769316A CN 110670128 B CN110670128 B CN 110670128B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67775—Docking arrangements
Abstract
The invention relates to automatic equipment for epitaxial treatment of wafers and an operation method thereof. The invention effectively reduces the film thickness and resistivity fluctuation of the wafer, and solves the problems of product failure and the like caused by overlarge position deviation of the wafer on the support.
Description
Technical Field
The invention relates to the technical field of wafer epitaxial processing, in particular to automatic equipment for wafer epitaxial processing and an operation method thereof.
Background
Epitaxial wafers are important as a substrate material in the fabrication of semiconductor chips and discrete devices. Silicon epitaxy is the deposition of a layer of monocrystalline silicon film on a monocrystalline silicon substrate by a physical or chemical method, and the main parameters for representing the quality of an epitaxial wafer comprise thickness and resistivity. In actual industrial production, Chemical Vapor Deposition (CVD) technology is widely applied, and a multi-plate epitaxial furnace for producing high-power devices has stable parameters and high production efficiency. Plays an important role in Chemical Vapor Deposition (CVD) equipment.
In the actual production process, the fluctuation of the thickness of the epitaxial layer of the wafer can cause the abnormal failure of the subsequent process, the thickness of the film is thick, the on-Resistance (RDSON) of a power device can be caused to be high, the heating of the device in the later use process of a tube core is high, the effective life is short, the defect is easy to occur in the durable life test, the thickness of the film is thin, the breakdown (VDS) is not enough, and the tube core directly fails.
In the traditional method, a photoelectric sensor is used for identification and judgment, and the surface of a Chemical Vapor Deposition (CVD) supporter is subjected to chemical reaction at the high temperature of 1000 ℃. The measured surface characteristics (color, roughness, gloss, surface curvature and inclination angle) change at any time, the measurement result is less than 0.5mm, the position of the wafer placed in the groove of the support is not fixed, the thickness of the product film fluctuates greatly, the wafer with the measurement error larger than 1mm cannot be accurately placed in the groove of the support, and the product fails.
In order to conveniently and externally control the quality of the epitaxial wafer in the production process, it is necessary to design a conveying table with a high-precision detection structure.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an automatic device for wafer epitaxial treatment, which effectively reduces the film thickness and resistivity fluctuation of wafers, solves the problem of product failure caused by overlarge position deviation of the wafers on a support, and simultaneously improves the efficiency of wafer epitaxial treatment and ensures the product quality.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides an automation equipment for epitaxial processing of wafer, examine test table, wafer reaction platform and first manipulator including the outline, the outline examine test table right side and install the wafer reaction platform, wafer reaction bench end rotates and installs the revolving stage, the outline examine test table on rotate and install the second manipulator that corresponds with the revolving stage, the outline examine test table and wafer reaction table's upper end and install the sealed cowling, the sealed cowling left end install the replacement chamber platform with the sealed cowling intercommunication, replacement chamber platform in install first high resolution image recognition device, the left side of replacement chamber platform rotate and install the first manipulator rather than corresponding, the front and back side of first manipulator install pay-off platform and unloading platform respectively, be full of nitrogen gas in the sealed cowling.
The middle part of the lower end of the rotary table is connected with a main shaft of a vertical servo motor in the wafer reaction table, a plurality of wafer placing grooves are uniformly distributed on the upper end surface of the rotary table around the circle center, a positioning U-shaped notch is arranged at the leftmost end of the rotary table, and a second high-resolution image recognition device is arranged above the positioning U-shaped notch.
Replacement chamber platform include platform body, place the platform and replace the chamber sealed cowling, platform body up end mid-mounting have place the platform, the standing groove has been arranged at place the platform up end middle part, the platform body on install and replace the chamber sealed cowling, replace chamber sealed cowling left and right sides middle part and install the import door and the export door that reciprocate respectively, import door and export door lower extreme all link to each other with the main shaft of opening the cylinder, the left end intercommunication of opening and sealed cowling of export door department.
And the second manipulator and the first manipulator both adopt a sucker type manipulator structure.
The specific operation of the technical scheme is as follows:
(a) firstly, transferring the wafer from the feeding table to an inlet of a replacement cavity platform through a first mechanical arm; (b) opening an inlet door by opening an air cylinder, then placing the wafer in a placing groove of a placing platform by a first mechanical arm, detecting the whole wafer by a first high-resolution image recognition device, taking out the wafer by the first mechanical arm when the wafer is damaged, and replacing the wafer with a new wafer, otherwise, carrying out the next step; (c) closing the inlet door, filling nitrogen into the cavity through a nitrogen filling system in the displacement cavity platform, and discharging the entered air; (d) then opening an outlet door, transferring the wafer into a first wafer placing groove of the turntable, then closing the outlet door, and starting a vertical servo motor to rotate a station clockwise; (e) repeating the steps a, b, c and d, feeding the wafer into each wafer placing groove of the turntable, filling hydrogen and trichlorosilane into the sealing cover, and carrying out epitaxial treatment on the upper surface of the wafer; (f) and after the completion, filling nitrogen gas into the sealing cover again, opening the replacement cavity platform, and conveying the wafer subjected to epitaxial treatment to the position of the blanking table according to the original path through the second mechanical arm and the first mechanical arm.
Has the advantages that: the invention relates to an automatic device for epitaxial treatment of wafers, which has the following specific advantages:
(1) the replacement cavity platform is arranged to prevent external air from entering the whole reaction cavity equipment to cause potential safety hazards;
(2) the first high-resolution image recognition device and the placing platform are arranged on the replacement cavity platform to detect whether the wafer is damaged or not;
(3) and the positioning U-shaped notch and the second high-resolution image recognition device are arranged on the rotary table to realize automatic positioning of the rotary table and simultaneously monitor the condition of the reaction chamber in real time.
Drawings
FIG. 1 is a structural view of the present invention;
FIG. 2 is a top view of a turntable according to the present invention;
FIG. 3 is an enlarged view of the invention at A of FIG. 2;
FIG. 4 is a structural view of a displacement chamber platform according to the present invention;
FIG. 5 is a top view of a displacement chamber platform according to the present invention.
The figure is as follows: 1. the outer contour detection platform, 2, a wafer reaction platform, 3, a first mechanical arm, 4, a replacement cavity platform, 5, a first high-resolution image recognition device, 6, a second mechanical arm, 7, a second high-resolution image recognition device, 8, a rotary table, 9, a positioning U-shaped notch, 10, a wafer placing groove, 11, a platform body, 12, the placing platform, 13, an opening cylinder, 14, the placing groove, 15, a replacement cavity sealing cover, 16, an inlet door, 17, an outlet door, 18, a feeding platform, 19, a discharging platform, 20 and a sealing cover.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
The embodiment of the invention relates to an automatic device for epitaxial treatment of wafers, which comprises an outer contour detection table 1, a wafer reaction table 2 and a first mechanical arm 3, wherein the wafer reaction table 2 is installed on the right side of the outer contour detection table 1, a rotary table 8 is installed at the upper end of the wafer reaction table 2 in a rotating way, a second mechanical arm 6 corresponding to the rotary table 8 is installed on the outer contour detection table 1 in a rotating way, a sealing cover 20 is installed at the upper ends of the outer contour detection table 1 and the wafer reaction table 2, a replacement cavity platform 4 communicated with the sealing cover 20 is installed at the left end of the sealing cover 20, a first high-resolution image recognition device 5 is installed in the replacement cavity platform 4, a first mechanical arm 3 corresponding to the replacement cavity platform 4 is installed at the left side in a rotating way, a feeding table 18 and a blanking table 19 are respectively installed at the front side and the rear side of the first mechanical arm 3, the sealing cap 20 is filled with nitrogen gas.
The main mention of this technical scheme is automatic carry the wafer, and carry out the equipment of epitaxial processing to the wafer, be used for sealing up in the epitaxial processing process through installing sealed cowling 20 in this technical scheme, avoid oxygen to mix with hydrogen and explode, replacement chamber platform 4 has been installed on the equipment simultaneously, replacement chamber platform 4 plays a transition effect to wafer input and delivery outlet, when inputing the wafer, the wafer can be detained earlier in replacement chamber platform 4, later close the opening of input, the nitrogen filling system in replacement chamber platform 4, to filling nitrogen in the replacement chamber platform 4, arrange unnecessary air, install first high resolution image recognition device 5 on the replacement chamber platform 4 simultaneously, first high resolution image recognition device 5 can detect the wafer outline, judge whether the wafer is worn and torn.
Preferably, 8 lower extreme middle parts of revolving stage link to each other with the main shaft of the vertical servo motor in the wafer reaction platform 2, 8 up end of revolving stage evenly arranged a plurality of wafer standing grooves 10 around the centre of a circle, 8 leftmost ends of revolving stage arranged location U type breach 9, location U type breach 9 top install second high resolution image recognition device 7, because arrange jaggedly on the wafer, each wafer standing groove 10 all must align with the wafer, so in order to ensure that the wafer is not damaged, be provided with location U type breach 9 on revolving stage 8, the wafer that is fragile can be accurate enter into in the wafer standing groove 10.
Preferably, replacement chamber platform 4 include platform body 11, place the platform 12 and replace chamber sealed cowling 15, 11 up end mid-mounting of platform body have place the platform 12, place the platform 12 up end mid-arrangement has standing groove 14, platform body 11 on install replacement chamber sealed cowling 15, replace chamber sealed cowling 15 left and right sides middle part and install respectively the entrance door 16 and the export door 17 that reciprocate, entrance door 16 and export door 17 lower extreme all link to each other with the main shaft of opening cylinder 13, the left end intercommunication of opening and sealed cowling 20 of export door 17 department, designed entrance door 16 and export door 17, conveniently arrange the air through filling nitrogen system to replacement chamber platform 4 and handle, avoid the air to enter into the reaction chamber along with wafer transport, when greatly reduced the potential safety hazard, also reduced the cost of transportation.
Preferably, the second manipulator 6 and the first manipulator 3 both adopt a sucker type manipulator structure, when the wafer is subjected to epitaxial treatment, the wafer needs to be aligned with the first manipulator 3 through the second manipulator 6 to be overturned, when the wafer is positioned on the rotary table 8, the outer extension surface of the wafer is positioned above the rotary table, when the first manipulator 3 is transported, the sucker of the first manipulator 3 sucks the lower end surface of the wafer placed on the feeding table 18, then the wafer is overturned, and the wafer is reversely transported into the replacement cavity platform 4, the sucker of the second manipulator 6 sucks the front surface of the wafer on the replacement cavity platform 4, and transports the wafer onto the rotary table 8, at the moment, the outer exposure of the lower end surface of the wafer is subjected to epitaxial treatment, and the treated wafer is transported to the position of the discharging table 19 through the second manipulator 6 and the first manipulator 3.
The specific operation of the technical scheme is as follows:
(a) firstly, the wafer is transferred from the feeding table 18 to the inlet of the replacement cavity platform 4 through the first mechanical arm 3; (b) the inlet door 16 is opened by opening the cylinder 13, then the first mechanical arm 3 places the wafer in the placing groove 14 of the placing platform 12, then the whole wafer is detected by the first high-resolution image recognition device 5, when the wafer is damaged, the wafer is taken out by the first mechanical arm 3 and is replaced by a new wafer, otherwise, the next step is carried out; (c) closing the inlet door 16, filling nitrogen into the cavity through a nitrogen filling system in the displacement cavity platform 4, and discharging the entered air; (d) then opening the exit door 17, transferring the wafer into the first wafer placing groove 10 of the turntable 8, then closing the exit door 17, and starting the vertical servo motor to rotate a station clockwise; (e) repeating the steps a, b, c and d, feeding the wafer into each wafer placing groove 10 of the turntable 8, filling hydrogen and trichlorosilane into the sealing cover 20, and performing epitaxial treatment on the upper surface of the wafer; (f) and after the completion, filling nitrogen gas into the sealing cover 20 again, opening the replacement cavity platform 4, and sending the wafer subjected to epitaxial treatment to the position of the blanking table 19 according to the original path through the second mechanical arm 6 and the first mechanical arm 3.
Claims (3)
1. The utility model provides an automation equipment for wafer epitaxial treatment, includes that the outline detects platform (1), wafer reaction platform (2) and first manipulator (3), its characterized in that: the outer contour detection platform comprises an outer contour detection platform (1), a wafer reaction platform (2) is installed on the right side of the outer contour detection platform (1), a rotary table (8) is installed on the upper end of the wafer reaction platform (2) in a rotating mode, a second mechanical arm (6) corresponding to the rotary table (8) is installed on the outer contour detection platform (1) in a rotating mode, a sealing cover (20) is installed at the upper end of the outer contour detection platform (1) and the upper end of the wafer reaction platform (2), a replacement cavity platform (4) communicated with the sealing cover (20) is installed at the left end of the sealing cover (20), a first high-resolution image recognition device (5) is installed in the replacement cavity platform (4), a first mechanical arm (3) corresponding to the replacement cavity platform is installed in a rotating mode on the left side of the replacement cavity platform (4), a feeding platform (18) and a blanking platform (19) are installed on the front side and the rear, the middle part of the lower end of the rotary table (8) is connected with a main shaft of a vertical servo motor in the wafer reaction table (2), a plurality of wafer placing grooves (10) are uniformly arranged on the upper end surface of the rotary table (8) around the circle center, a positioning U-shaped notch (9) is arranged at the leftmost end of the rotary table (8), a second high-resolution image recognition device (7) is arranged above the positioning U-shaped notch (9), the replacement cavity platform (4) comprises a platform body (11), a placing platform (12) and a replacement cavity sealing cover (15), the middle part of the upper end surface of the platform body (11) is provided with the placing platform (12), the middle part of the upper end surface of the placing platform (12) is provided with a placing groove (14), the platform body (11) is provided with the replacement cavity sealing cover (15), and the middle parts of the left side and the right side of the replacement cavity sealing cover (15) are respectively provided with an inlet door (, the lower ends of the inlet door (16) and the outlet door (17) are connected with a main shaft of the opening cylinder (13), and an opening at the outlet door (17) is communicated with the left end of the sealing cover (20).
2. An automated apparatus for wafer epitaxy processing as claimed in claim 1, wherein: and the second manipulator (6) and the first manipulator (3) both adopt a sucker type manipulator structure.
3. A method of operating an automated apparatus for wafer epitaxy processing as claimed in claim 2, comprising the steps of:
(a) firstly, transferring the wafer from a feeding table (18) to an inlet of a replacement cavity platform (4) through a first mechanical arm (3);
(b) the inlet door (16) is opened by opening the cylinder (13), then the wafer is placed in the placing groove (14) of the placing platform (12) by the first mechanical arm (3), then the whole wafer is detected by the first high-resolution image recognition device (5), when the wafer is damaged, the wafer is taken out by the first mechanical arm (3) and is replaced by a new wafer, otherwise, the next step is carried out;
(c) closing the inlet door (16), filling nitrogen into the cavity through a nitrogen filling system in the displacement cavity platform (4), and discharging the entered air;
(d) then opening an outlet door (17), transferring the wafer into a first wafer placing groove (10) of the turntable (8), then closing the outlet door (17), and starting a vertical servo motor to rotate a station clockwise;
(e) repeating the steps a, b, c and d, sending the wafer into each wafer placing groove (10) of the turntable (8), filling hydrogen and trichlorosilane into the sealing cover (20), and carrying out epitaxial treatment on the upper surface of the wafer;
(f) and after the completion, filling nitrogen gas into the sealing cover (20) again, opening the replacement cavity platform (4), and conveying the wafer subjected to epitaxial treatment to the position of the discharging table (19) according to the original path through the second mechanical arm (6) and the first mechanical arm (3).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910769316.XA CN110670128B (en) | 2019-08-20 | 2019-08-20 | Automatic equipment for epitaxial treatment of wafer and operation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910769316.XA CN110670128B (en) | 2019-08-20 | 2019-08-20 | Automatic equipment for epitaxial treatment of wafer and operation method thereof |
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| CN110670128A CN110670128A (en) | 2020-01-10 |
| CN110670128B true CN110670128B (en) | 2021-04-30 |
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| CN115635380B (en) * | 2022-12-26 | 2023-03-17 | 华芯半导体研究院(北京)有限公司 | Vapor phase epitaxial growth auxiliary device |
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| JPH05291383A (en) * | 1992-04-13 | 1993-11-05 | Mitsubishi Electric Corp | Mechanism and method for semiconductor wafer arrangement |
| CN107731722B (en) * | 2016-08-11 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Method and device for taking and placing film by mechanical arm |
| CN107993963B (en) * | 2017-11-21 | 2020-07-10 | 长江存储科技有限责任公司 | Mechanical arm for wafer detection |
| CN208903985U (en) * | 2018-09-08 | 2019-05-24 | 浙江求是半导体设备有限公司 | Wafer transfer device |
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