CN110661066B - Communication device, dielectric waveguide filter and capacitive coupling bandwidth adjusting method thereof - Google Patents
Communication device, dielectric waveguide filter and capacitive coupling bandwidth adjusting method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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Abstract
The invention relates to a communication device, a dielectric waveguide filter and a capacitive coupling bandwidth adjusting method thereof. The dielectric waveguide filter comprises a dielectric block, a connecting block and a metal layer. The metal layer on the top surface or the bottom surface of the combined block is provided with hollowed-out openings, and the two first hollowed-out openings are respectively and correspondingly arranged on the metal layers of the two medium blocks. The hollowed-out opening generates negative coupling by cutting surface current on the surface of the waveguide resonant cavity, so that an attenuation pole outside a frequency response passband is generated, and the frequency selection performance of the dielectric waveguide filter can be improved; the hollow structure is flexible to apply and is not limited by a cavity arrangement structure; the process is easy to control, the processing process is simple, and the processing efficiency is improved; the design range of the capacitive coupling bandwidth is larger, the design flexibility is higher, the design efficiency is improved, the debugging is convenient and simple, the debugging efficiency is improved, and the cost is reduced. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
Description
Technical Field
The present invention relates to the technical field of communication devices, and in particular, to a communication device, a dielectric waveguide filter, and a method for adjusting a capacitive coupling bandwidth thereof.
Background
As the requirements for the filter performance become higher, the application prospect of the filter with high frequency selection characteristic becomes wider. Meanwhile, the dielectric waveguide filter with high frequency selection characteristic has wide application prospect in 5G communication equipment. Therefore, a method for designing a high-frequency selective characteristic of a dielectric waveguide filter has been a hot spot of research.
In order to improve the frequency selective characteristics of dielectric waveguide filters, there are two general implementations in existing dielectric waveguide filter technologies: firstly, the attenuation pole outside the frequency response passband is formed by adopting the zero cavity structure, and the number of the attenuation poles is consistent with the number of the zero cavities, so that the size of the dielectric waveguide filter is increased by increasing the zero cavity structure in the mode, meanwhile, the weight and the cost are increased, and the design difficulty is increased due to the increase of the number of the dielectric waveguide resonators, so that the miniaturization of products is not facilitated. Secondly, the deep blind hole structure is adopted to generate capacitive coupling, and then an attenuation pole outside a frequency response passband is generated.
Disclosure of Invention
Based on the above, it is necessary to overcome the defects of the prior art, and to provide a communication device, a dielectric waveguide filter and a method for adjusting the capacitive coupling bandwidth thereof, which can simplify the structure, reduce the production difficulty, facilitate mass production, and increase the design flexibility due to a larger design range of the capacitive coupling bandwidth.
The technical scheme is as follows: a dielectric waveguide filter comprising: the device comprises two medium blocks and two connecting blocks, wherein the two medium blocks are connected through the connecting blocks to form a combined block, and grooves positioned on the side surfaces of the combined block are formed by matching the two medium blocks with the connecting blocks;
the metal layers are arranged on the surfaces of the combined blocks, and each dielectric block and the metal layer on the surface of the dielectric block are equivalent to form a dielectric waveguide resonant cavity;
the metal layer on the top surface or the bottom surface of the combined block is provided with a hollowed-out opening, the hollowed-out opening comprises two first hollowed-out openings and a second hollowed-out opening arranged between the two first hollowed-out openings, the first hollowed-out openings are communicated with the second hollowed-out openings, the two first hollowed-out openings are respectively correspondingly arranged on the two metal layers of the medium block, and the second hollowed-out openings are arranged on the metal layers of the connecting blocks.
According to the dielectric waveguide filter, firstly, the hollowed-out opening generates negative coupling by cutting surface current on the surface of the waveguide resonant cavity, so that an attenuation pole outside a frequency response passband is generated, and the frequency selection performance of the dielectric waveguide filter can be improved; secondly, the hollowed-out openings are positioned on the surfaces of two adjacent waveguide resonant cavities on the same layer, so that the hollowed-out structure is flexible to apply and is not limited by a cavity arrangement structure; thirdly, the hollowed-out opening part is of a metal removing structure with a certain shape, so that the process is easy to control, the processing process is simple, and the processing efficiency is improved; fourth, change the width (corresponding to the degree of depth D of recess) of inductance diaphragm, the width and the length of fretwork mouth position all can control the size of capacitive coupling bandwidth, consequently, the design scope of capacitive coupling bandwidth is great, and design flexibility is higher, improves design efficiency, and the debugging is convenient simple, improves debugging efficiency, reduce cost. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
In one embodiment, two tuning holes corresponding to the two dielectric blocks are formed in one of the top surface and the bottom surface of the combined block, and the metal layer is further arranged on the wall of the tuning holes;
the tuning hole and the hollowed-out opening are positioned on the same surface of the combined block, and the first hollowed-out opening is arranged beside the tuning hole; or the tuning hole and the hollowed-out opening are respectively positioned on the top surface and the bottom surface of the combined block, and the first hollowed-out opening is arranged beside the edge of the dielectric block.
In one embodiment, the tuning hole and the hollowed-out opening are positioned on the same surface of the combined block, and the first hollowed-out opening is arranged around the tuning hole; or the tuning hole and the hollowed-out opening are respectively positioned on the top surface and the bottom surface of the combined block, and the first hollowed-out opening is arranged along the edge of the dielectric block.
In one embodiment, one of the top surface and the bottom surface of the combined block is provided with a tuning hole corresponding to one of the dielectric blocks, and the metal layer is also arranged on the wall of the tuning hole;
the tuning hole and the hollowed-out opening are positioned on the same surface of the combined block, and the first hollowed-out opening is arranged beside the tuning hole; or the tuning hole and the hollowed-out opening are respectively positioned on the top surface and the bottom surface of the combined block, and the first hollowed-out opening is arranged beside the edge of the dielectric block.
In one embodiment, tuning holes are not formed in the top surface and the bottom surface of the combination block, and the first hollowed-out opening is formed along the edge of the dielectric block.
In one embodiment, the number of the grooves is two, and the two grooves are respectively positioned on two opposite sides of the combined block.
In one embodiment, the dielectric block and the connection block are both ceramic dielectric blocks.
In one embodiment, the two medium blocks and the connecting block are of an integrated structure; the top surface of the medium block and the top surface of the connecting block are located on the same plane, and the bottom surface of the medium block and the bottom surface of the connecting block are located on the same plane.
A method for adjusting the capacitive coupling bandwidth of a dielectric waveguide filter comprises the following steps: and adjusting the width and the length of the hollowed-out opening to adjust the size of the capacitive coupling bandwidth between the two dielectric resonant cavities.
According to the capacitive coupling bandwidth adjusting method, firstly, the hollowed-out opening generates negative coupling by cutting surface current on the surface of the waveguide resonant cavity, so that an attenuation pole outside a frequency response passband is generated, and the frequency selection performance of the dielectric waveguide filter can be improved; secondly, the hollowed-out openings are positioned on the surfaces of two adjacent waveguide resonant cavities on the same layer, so that the hollowed-out structure is flexible to apply and is not limited by a cavity arrangement structure; thirdly, the hollowed-out opening part is of a metal removing structure with a certain shape, so that the process is easy to control, the processing process is simple, and the processing efficiency is improved; fourth, the width and the length of the hollowed-out opening part are changed to control the size of the capacitive coupling bandwidth, so that the design range of the capacitive coupling bandwidth is larger, the design flexibility is higher, the design efficiency is improved, the debugging is convenient and simple, the debugging efficiency is improved, and the cost is reduced. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
A communication device comprising said dielectric waveguide filter.
According to the communication device, firstly, the hollowed-out opening generates negative coupling by cutting the surface current on the surface of the waveguide resonant cavity, so that an attenuation pole outside a frequency response passband is generated, and the frequency selection performance of the dielectric waveguide filter can be improved; secondly, the hollowed-out openings are positioned on the surfaces of two adjacent waveguide resonant cavities on the same layer, so that the hollowed-out structure is flexible to apply and is not limited by a cavity arrangement structure; thirdly, the hollowed-out opening part is of a metal removing structure with a certain shape, so that the process is easy to control, the processing process is simple, and the processing efficiency is improved; fourth, change the width (corresponding to the degree of depth D of recess) of inductance diaphragm, the width and the length of fretwork mouth position all can control the size of capacitive coupling bandwidth, consequently, the design scope of capacitive coupling bandwidth is great, and design flexibility is higher, improves design efficiency, and the debugging is convenient simple, improves debugging efficiency, reduce cost. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
Drawings
FIG. 1 is a schematic diagram of a dielectric waveguide filter according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a dielectric waveguide filter according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a dielectric waveguide filter according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a dielectric waveguide filter according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a dielectric waveguide filter according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a dielectric waveguide filter according to an embodiment of the present invention.
Reference numerals:
10. a combination block; 11. a dielectric block; 111. edges; 12. a connecting block; 13. a metal layer; 14. a groove; 15. a tuning hole; 20. a hollowed-out opening; 21. a first hollowed-out opening; 22. a second hollow opening; 23. and a third hollowed-out opening.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
In the description of the present invention, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the description of the present invention, it will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" to another element, there are no intervening elements present.
In one embodiment, referring to fig. 1 to 6, a dielectric waveguide filter includes a dielectric block 11, a connection block 12, and a metal layer 13. The number of the medium blocks 11 is two, the two medium blocks 11 are connected through the connecting block 12 to form the combined block 10, and grooves 14 positioned on the side face of the combined block 10 are formed by the two medium blocks 11 and the connecting block 12 in a matching mode. The metal layer 13 is provided on the surface of the block 10. Each dielectric block 11 and the metal layer 13 on the surface of the dielectric block 11 are equivalent to constitute a dielectric waveguide resonant cavity. The metal layer 13 on the top surface or the bottom surface of the combined block 10 is provided with a hollowed-out opening 20, and the hollowed-out opening 20 comprises two first hollowed-out openings 21 and a second hollowed-out opening 22 arranged between the two first hollowed-out openings 21. The first hollowed-out openings 21 are communicated with the second hollowed-out openings 22, the two first hollowed-out openings 21 are respectively and correspondingly arranged on the metal layers 13 of the two medium blocks 11, and the second hollowed-out openings 22 are arranged on the metal layers 13 of the connecting blocks 12.
The metal layer 13 is not covered at the hollow opening 20 and the wall surface of the combined block 10 is exposed. Specifically, the metal layer 13 at the hollowed-out opening 20 exposes the wall surface by removing. Of course, the wall surface of the combined block 10 corresponding to the hollowed-out opening 20 may not be electroplated or sprayed with the metal layer 13, so that the wall surface of the dielectric block 11 is exposed.
The "side", "top" and "bottom" refer to the expression that the surface above the dielectric waveguide filter is the "top", the surface below the dielectric waveguide filter is the "bottom", and the remaining surface of the dielectric waveguide filter is the "side", that is, the "top", "bottom" and "side" are relative expressions, and are not to be construed as limiting the embodiments of the present invention.
In the dielectric waveguide filter, firstly, the hollowed-out opening 20 generates negative coupling by cutting the surface current on the surface of the waveguide resonant cavity, so that an attenuation pole outside a frequency response passband is generated, and the frequency selection performance of the dielectric waveguide filter can be improved; secondly, the hollowed-out openings 20 are positioned on the surfaces of two adjacent waveguide resonant cavities on the same layer, so that the hollowed-out structure is flexible to apply and is not limited by a cavity arrangement structure; thirdly, the hollowed-out opening 20 is of a metal removing structure with a certain shape, so that the process is easy to control, the processing process is simple, and the processing efficiency is improved; fourth, change the width (corresponding to the degree of depth D of recess 14) of inductance diaphragm, the width and the length of fretwork mouth 20 position all can control the size of capacitive coupling bandwidth, therefore, the design scope of capacitive coupling bandwidth is great, and design flexibility is higher, improves design efficiency, and the debugging is convenient simple, improves debug efficiency, reduce cost. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
Further, referring to fig. 1 to 6, two tuning holes 15 corresponding to the two dielectric blocks 11 are formed on one of the top and bottom surfaces of the combined block 10, and the metal layer 13 is further disposed on the wall of the tuning holes 15.
The tuning hole 15 and the hollowed-out opening 20 are positioned on the same surface of the combined block 10, and the first hollowed-out opening 21 is arranged beside the tuning hole 15. Alternatively, the tuning hole 15 and the hollowed-out opening 20 are respectively located on the top surface and the bottom surface of the combined block 10, and the first hollowed-out opening 21 is disposed beside the edge 111 of the dielectric block 11.
Specifically, referring to fig. 1 or 2, two tuning holes 15 corresponding to the two dielectric blocks 11 are provided on the top surface of the combined block 10, and the metal layer 13 is further provided on the wall of the tuning holes 15. The tuning hole 15 and the hollowed-out opening 20 are both positioned on the top surface of the combined block 10, and the first hollowed-out opening 21 is arranged beside the tuning hole 15.
Or, two tuning holes 15 corresponding to the two dielectric blocks 11 are provided on the top surface of the combined block 10, and the metal layer 13 is also provided on the wall of the tuning hole 15. The hollow opening 20 is located at the bottom surface of the combined block 10, and the first hollow opening 21 is disposed beside the edge 111 of the dielectric block 11.
Or, two tuning holes 15 corresponding to the two dielectric blocks 11 are provided on the bottom surface of the combined block 10, and the metal layer 13 is further provided on the wall of the tuning hole 15. The hollow opening 20 is located at the bottom surface of the combined block 10, and the first hollow opening 21 is disposed at the side of the tuning hole 15.
Or, two tuning holes 15 corresponding to the two dielectric blocks 11 are provided on the bottom surface of the combined block 10, and the metal layer 13 is further provided on the wall of the tuning hole 15. The hollow opening 20 is located on the top surface of the combined block 10, and the first hollow opening 21 is disposed beside the edge 111 of the dielectric block 11.
Thus, when the tuning hole 15 and the hollowed-out opening 20 are positioned on the same surface of the combined block 10, as the first hollowed-out opening 21 is arranged beside the tuning hole 15, a better capacitive coupling effect can be realized, and when the distance between the first hollowed-out opening 21 and the tuning hole 15 is closer, the capacitive coupling bandwidth is larger; when the tuning hole 15 and the hollowed-out opening 20 are respectively positioned on the top surface and the bottom surface of the combined block 10, as the first hollowed-out opening 21 is arranged beside the edge 111 of the dielectric block 11, a better capacitive coupling effect can be realized, and when the distance between the first hollowed-out opening 21 and the edge 111 of the dielectric block 11 is closer, the capacitive coupling bandwidth is larger.
Further, the tuning hole 15 and the hollowed-out opening 20 are located on the same surface of the combined block 10, and the first hollowed-out opening 21 is disposed around the tuning hole 15. Or, the tuning hole 15 and the hollowed-out opening 20 are respectively located on the top surface and the bottom surface of the combined block 10, and the first hollowed-out opening 21 is disposed along the edge 111 of the dielectric block 11. In this way, when the first hollow opening 21 is disposed around the tuning hole 15, specifically, for example, the first hollow opening 21 is an arc-shaped opening, a wavy line-shaped opening, or a fold line-shaped opening, which is disposed around the periphery of the tuning hole 15, so as to have a better capacitive coupling effect. Of course, the first hollowed-out opening 21 may be a straight strip-shaped opening arranged at one side of the tuning hole 15, and has a better capacitive coupling effect.
Further, referring to any one of fig. 1, fig. 2, fig. 4 and fig. 5, the size of the capacitive coupling bandwidth can be adjusted by changing the length of the hollow opening 20. For example, the hollow opening 20 further includes a third hollow opening 23 in communication with the first hollow opening 21, and the third hollow opening 23 is disposed around the tuning hole 15.
Similarly, when the first hollowed-out opening 21 is disposed along the edge 111 of the dielectric block 11, for example, the first hollowed-out opening 21 is a straight strip-shaped opening, and the first hollowed-out opening 21 and the edge 111 of the dielectric block 11 are disposed in parallel, so that a better capacitive coupling effect is achieved. Of course, the first hollowed-out opening 21 may be an arc-shaped opening, a wavy line opening, a zigzag line opening, or the like, which are disposed along the edge 111 of the dielectric block 11, and also has an effect of improving the size of the capacitive coupling bandwidth.
The shape, width and length of the first hollow opening 21 corresponding to one of the dielectric blocks 11 may be the same as or different from the shape, width and length of the first hollow opening 21 corresponding to the other dielectric block 11, and the present invention is not limited thereto.
The hole diameter and the hole depth of the tuning hole 15 provided in one of the dielectric blocks 11 may be the same as or different from the hole depth of the tuning hole 15 provided in the other dielectric block 11, and the present invention is not limited thereto.
As an alternative, one of the top and bottom surfaces of the combined block 10 is provided with a tuning hole 15 corresponding to one of the dielectric blocks 11, and the metal layer 13 is further disposed on a wall of the tuning hole 15.
The tuning hole 15 and the hollowed-out opening 20 are positioned on the same surface of the combined block 10, and the first hollowed-out opening 21 is arranged beside the tuning hole 15; alternatively, the tuning hole 15 and the hollowed-out opening 20 are respectively located on the top surface and the bottom surface of the combined block 10, and the first hollowed-out opening 21 is disposed beside the edge 111 of the dielectric block 11.
Specifically, the top surface of one dielectric block 11 is provided with a tuning hole 15, the tuning hole 15 is not provided on the other dielectric block 11 (i.e. the hole depth of the tuning hole 15 is 0), and the metal layer 13 is also provided on the wall of the tuning hole 15. The hollowed-out opening 20 is located on the top surface of the combined block 10, and the first hollowed-out opening 21 is disposed at the side of the tuning hole 15.
Or, the top surface of one dielectric block 11 is provided with a tuning hole 15, the tuning hole 15 is not arranged on the other dielectric block 11 (i.e. the hole depth of the tuning hole 15 is 0), and the metal layer 13 is also arranged on the wall of the tuning hole 15. The hollow opening 20 is located at the bottom surface of the combined block 10, and the first hollow opening 21 is disposed beside the edge 111 of the dielectric block 11.
Or, tuning holes 15 are formed in the bottom surface of one dielectric block 11, tuning holes 15 are not formed in the other dielectric block 11 (i.e. the hole depth of the tuning holes 15 is 0), and the metal layer 13 is further formed on the wall of the tuning holes 15. The hollow opening 20 is located at the bottom surface of the combined block 10, and the first hollow opening 21 is disposed at the side of the tuning hole 15.
Or, tuning holes 15 are formed in the bottom surface of one dielectric block 11, tuning holes 15 are not formed in the other dielectric block 11 (i.e. the hole depth of the tuning holes 15 is 0), and the metal layer 13 is further formed on the wall of the tuning holes 15. The hollow opening 20 is located on the top surface of the combined block 10, and the first hollow opening 21 is disposed beside the edge 111 of the dielectric block 11.
Similarly, similar to the principle of two tuning holes 15, when the tuning holes 15 and the hollowed-out openings 20 are positioned on the same surface of the combined block 10, as the first hollowed-out openings 21 are arranged beside the tuning holes 15, a better capacitive coupling effect can be realized, and when the distance between the first hollowed-out openings 21 and the tuning holes 15 is closer, the larger the capacitive coupling bandwidth is; when the tuning hole 15 and the hollowed-out opening 20 are respectively positioned on the top surface and the bottom surface of the combined block 10, as the first hollowed-out opening 21 is arranged beside the edge 111 of the dielectric block 11, a better capacitive coupling effect can be realized, and when the distance between the first hollowed-out opening 21 and the edge 111 of the dielectric block 11 is closer, the capacitive coupling bandwidth is larger.
In yet another embodiment, referring to fig. 5, tuning holes 15 are not formed on the top surface and the bottom surface of the combined block 10, and the first hollowed-out opening 21 is formed along the edge 111 of the dielectric block 11. In this way, since the first hollow opening 21 is disposed beside the edge 111 of the dielectric block 11, a better capacitive coupling effect can be achieved, and when the distance between the first hollow opening 21 and the edge 111 of the dielectric block 11 is closer, the capacitive coupling bandwidth is larger.
In yet another embodiment, the metal layers 13 on the top and bottom surfaces of the combined block 10 are provided with hollowed-out openings 20. When the tuning holes 15 and the hollowed-out openings 20 are all formed on the same surface of the combined block 10, the first hollowed-out openings 21 are formed at the sides of the tuning holes 15. Thus, since the first hollow opening 21 is disposed at the side of the tuning hole 15, a better capacitive coupling effect can be achieved, and when the distance between the first hollow opening 21 and the tuning hole 15 is closer, the capacitive coupling bandwidth is larger.
When only the hollowed-out opening 20 is provided on the top surface or the bottom surface of the combined block 10, the first hollowed-out opening 21 is disposed beside the edge 111 of the dielectric block 11. Because the first hollowed-out opening 21 is arranged beside the edge 111 of the dielectric block 11, a better capacitive coupling effect can be realized, and when the distance between the first hollowed-out opening 21 and the edge 111 of the dielectric block 11 is closer, the capacitive coupling bandwidth is larger.
In one embodiment, referring to fig. 2 to 5, the number of the grooves 14 is two, and the two grooves 14 are respectively located on two opposite sides of the combined block 10. Thus, adjusting the distance between the bottom walls of the two recesses 14 can correspondingly adjust the size of the capacitive coupling bandwidth between the two dielectric resonators.
As an alternative, referring again to fig. 1, the recess 14 may be only one, and the recess 14 is located on one side of the combined block 10. Thus, the depth D of the recess 14 can be adjusted to correspondingly adjust the bandwidth of the capacitive coupling between the two dielectric resonators.
In one embodiment, the dielectric block 11 and the connection block 12 are both ceramic dielectric blocks.
In one embodiment, the two dielectric blocks 11 and the connecting block 12 are of an integrated structure; the top surface of the dielectric block 11 and the top surface of the connecting block 12 are located on the same plane, and the bottom surface of the dielectric block 11 and the bottom surface of the connecting block 12 are located on the same plane.
In one embodiment, referring to fig. 1 or fig. 2, a method for adjusting a capacitive coupling bandwidth of a dielectric waveguide filter includes the steps of: the width and length of the hollowed-out opening 20 are adjusted to adjust the size of the capacitive coupling bandwidth between the two dielectric resonant cavities.
In the above-mentioned method for adjusting the bandwidth of capacitive coupling, firstly, the hollowed-out opening 20 generates negative coupling by cutting the surface current on the surface of the waveguide resonant cavity, so as to generate an attenuation pole outside the frequency response passband, thereby improving the frequency selectivity performance of the dielectric waveguide filter; secondly, the hollowed-out openings 20 are positioned on the surfaces of two adjacent waveguide resonant cavities on the same layer, so that the hollowed-out structure is flexible to apply and is not limited by a cavity arrangement structure; thirdly, the hollowed-out opening 20 is of a metal removing structure with a certain shape, so that the process is easy to control, the processing process is simple, and the processing efficiency is improved; fourth, the width and the length of the hollow opening 20 can be changed to control the size of the capacitive coupling bandwidth, so that the design range of the capacitive coupling bandwidth is larger, the design flexibility is higher, the design efficiency is improved, the debugging is convenient and simple, the debugging efficiency is improved, and the cost is reduced. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
Further, referring to fig. 1 or 2, by controlling the depth D of the groove 14, that is, controlling the width of the inductive diaphragm, the size of the capacitive coupling bandwidth between the two dielectric resonators can be adjusted accordingly. Thus, the intensity of the attenuation pole outside the frequency response passband is further controlled, and the frequency selection performance of the dielectric waveguide filter can be improved.
In one embodiment, a communication device includes a dielectric waveguide filter as in any of the embodiments above.
In the communication device, firstly, the hollowed-out opening 20 generates negative coupling by cutting the surface current on the surface of the waveguide resonant cavity, so that an attenuation pole outside the frequency response passband is generated, and the frequency selection performance of the dielectric waveguide filter can be improved; secondly, the hollowed-out openings 20 are positioned on the surfaces of two adjacent waveguide resonant cavities on the same layer, so that the hollowed-out structure is flexible to apply and is not limited by a cavity arrangement structure; thirdly, the hollowed-out opening 20 is of a metal removing structure with a certain shape, so that the process is easy to control, the processing process is simple, and the processing efficiency is improved; fourth, change the width (corresponding to the degree of depth D of recess 14) of inductance diaphragm, the width and the length of fretwork mouth 20 position all can control the size of capacitive coupling bandwidth, therefore, the design scope of capacitive coupling bandwidth is great, and design flexibility is higher, improves design efficiency, and the debugging is convenient simple, improves debug efficiency, reduce cost. Meanwhile, the structure can be simplified, the production difficulty is reduced, and the mass production is facilitated.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. A dielectric waveguide filter, comprising:
the device comprises two medium blocks and two connecting blocks, wherein the two medium blocks are connected through the connecting blocks to form a combined block, grooves positioned on the side surfaces of the combined block are formed by the two medium blocks and the connecting blocks in a matched mode, and the two grooves are respectively positioned on two opposite side surfaces of the combined block;
the metal layers are arranged on the surfaces of the combined blocks, and each dielectric block and the metal layer on the surface of the dielectric block are equivalent to form a dielectric waveguide resonant cavity;
the metal layer on the top surface or the bottom surface of the combined block is provided with a hollowed-out opening, the hollowed-out opening is of a metal removing structure with a certain shape, the width and the length of the hollowed-out opening can control the size of the capacitive coupling bandwidth, the hollowed-out opening comprises two first hollowed-out openings and a second hollowed-out opening arranged between the two first hollowed-out openings, the first hollowed-out openings are communicated with the second hollowed-out openings, the two first hollowed-out openings are respectively and correspondingly arranged on the metal layers of the two medium blocks, and the second hollowed-out opening is arranged on the metal layer of the connecting block; wherein, two tuning holes corresponding to the two dielectric blocks are arranged on one of the top surface and the bottom surface of the combined block, and the metal layer is also arranged on the wall of the tuning hole;
the tuning hole and the hollowed-out opening are positioned on the same surface of the combined block, and the first hollowed-out opening is arranged beside the tuning hole; or the tuning hole and the hollowed-out opening are respectively positioned on the top surface and the bottom surface of the combined block, and the first hollowed-out opening is arranged beside the edge of the dielectric block.
2. The dielectric waveguide filter of claim 1, wherein the tuning hole and the hollowed-out opening are located on a same surface of the combining block, and the first hollowed-out opening is disposed around the tuning hole.
3. The dielectric waveguide filter according to claim 2, wherein the first hollowed-out opening is an arc-shaped opening, a wavy line-shaped opening or a broken line-shaped opening around the periphery of the tuning hole.
4. The dielectric waveguide filter of claim 2, wherein the hollowed-out port further comprises a third hollowed-out port in communication with the first hollowed-out port, the third hollowed-out port being disposed around the tuning hole.
5. The dielectric waveguide filter of claim 1, wherein the tuning hole and the hollowed-out opening are located on a top surface and a bottom surface of the combined block, respectively, and the first hollowed-out opening is located along an edge of the dielectric block.
6. The dielectric waveguide filter of claim 5, wherein the first hollowed-out opening is a straight stripe opening; the first hollowed-out opening is arranged in parallel with the edge of the medium block.
7. The dielectric waveguide filter of claim 1, wherein the dielectric block and the connection block are both ceramic dielectric blocks.
8. The dielectric waveguide filter according to any one of claims 1 to 7, wherein two of the dielectric blocks are of integral construction with the connection block; the top surface of the medium block and the top surface of the connecting block are located on the same plane, and the bottom surface of the medium block and the bottom surface of the connecting block are located on the same plane.
9. A method of adjusting the bandwidth of a capacitive coupling of a dielectric waveguide filter according to any one of claims 1 to 8, comprising the steps of: and adjusting the width and the length of the hollowed-out opening to adjust the size of the capacitive coupling bandwidth between the two dielectric waveguide resonant cavities.
10. A communication device comprising a dielectric waveguide filter according to any one of claims 1 to 8.
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