CN110649455A - On-chip integrated graphene silicon dioxide optical waveguide saturable absorber and preparation method thereof - Google Patents
On-chip integrated graphene silicon dioxide optical waveguide saturable absorber and preparation method thereof Download PDFInfo
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- CN110649455A CN110649455A CN201910941092.6A CN201910941092A CN110649455A CN 110649455 A CN110649455 A CN 110649455A CN 201910941092 A CN201910941092 A CN 201910941092A CN 110649455 A CN110649455 A CN 110649455A
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- optical waveguide
- silicon dioxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
Abstract
The invention discloses an on-chip integrated graphene silicon dioxide optical waveguide saturable absorber and a preparation method thereof, wherein the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber comprises a substrate, a silicon dioxide optical waveguide and a graphene film, the length, width and height directions of the substrate are respectively defined as X, Y, Z directions, the upper surface of the substrate is provided with accommodating grooves, and the accommodating grooves extend to two ends of the substrate along the X direction; the silica optical waveguide is positioned in the containing groove, the bottom of the silica optical waveguide is not contacted with the bottom of the containing groove, the silica optical waveguide is connected to the side wall of the containing groove through a cantilever beam, and two ends of the silica optical waveguide are respectively used for being coupled with an input optical device and an output optical device; the graphene film covers the silicon dioxide optical waveguide, and along the Y direction, both sides of the graphene film at least partially cover the upper surface of the substrate. The invention not only can enhance the interaction force of the graphene film and the optical waveguide transmission mode, but also can improve the saturation absorption extinction ratio.
Description
Technical Field
The invention relates to the technical field of on-chip photonic integrated chips, in particular to an on-chip integrated graphene silicon dioxide optical waveguide saturable absorber and a preparation method thereof.
Background
The femtosecond pulse laser is used as an important optoelectronic device, can provide a femtosecond pulse light source, and has wide application. Based on the nonlinear saturation absorption effect of graphene, the realized passive mode-locked femtosecond laser is one of the current very popular technologies, and has great research value. At present, the main structure of a graphene saturated absorption optical device is that graphene covers the end face of a single mode fiber or the upper surface of a micro-nano fiber. The contact area between the evanescent field of the structured optical waveguide and the graphene is small, so that the interaction between the graphene and the optical field is not strong enough, the saturation absorption extinction ratio is low, and the femtosecond pulse width is not reduced favorably. In addition, the optical device has larger size, generally in the centimeter level, which is not beneficial to reducing the cavity length of the laser, and leads to lower repetition frequency of the laser.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an on-chip integrated graphene silicon dioxide optical waveguide saturable absorber and a preparation method thereof, which can not only enhance the interaction force of a graphene film and an optical waveguide transmission mode, but also improve the saturation absorption extinction ratio.
In order to achieve the above purposes, the technical scheme adopted by the invention is as follows:
an on-chip integrated graphene silica optical waveguide saturable absorber, comprising:
the length direction, the width direction and the height direction of the substrate are respectively defined as X, Y, Z directions, the upper surface of the substrate is provided with a containing groove, and the containing groove extends to two ends of the substrate along the X direction;
the silicon dioxide optical waveguide is positioned in the accommodating groove, the bottom of the silicon dioxide optical waveguide is not contacted with the bottom of the accommodating groove, the silicon dioxide optical waveguide is connected to the side wall of the accommodating groove through a cantilever beam, and two ends of the silicon dioxide optical waveguide are respectively used for being coupled with an input optical device and an output optical device;
and the graphene film covers the silicon dioxide optical waveguide, and both sides of the graphene film at least partially cover the upper surface of the substrate along the Y direction.
Furthermore, the cross section size of the silicon dioxide optical waveguide is 300-5000 nm in the Y direction and 3-10 μm in the Z direction.
Further, the size of the graphene film in the Z direction is 0.34-3.4 nm.
Furthermore, at least one of the two groove side walls of the accommodating groove is connected with the silicon dioxide optical waveguide side wall through a plurality of cantilever beams, and the plurality of cantilever beams are arranged at intervals along the X direction.
Furthermore, in the plurality of cantilever beams, the distance between two adjacent cantilever beams is 3-10 μm.
Furthermore, two groove side walls of the accommodating groove are respectively connected with two side walls of the silica optical waveguide through a plurality of cantilever beams, the plurality of cantilever beams between each groove side wall and the silica optical waveguide side wall are arranged at intervals along the X direction, and meanwhile, the cantilever beams positioned at two sides of the silica optical waveguide are symmetrically distributed relative to the silica optical waveguide.
Further, the device also comprises an input optical device and an output optical device, wherein the input optical device and the output optical device are respectively positioned at two ends of the substrate along the X direction.
Further, the dimension of the cantilever beam in the Z direction is smaller than or equal to the dimension of the silicon dioxide optical waveguide in the Z direction.
Further, along the X direction, the silica optical waveguide includes an input optical waveguide, a transmission optical waveguide, and an output optical waveguide, which are connected in sequence, and the input optical waveguide and the output optical waveguide are respectively used for coupling with an input optical device and an output optical device; the projection of the input optical waveguide and the projection of the output optical waveguide on the XY plane are trapezoidal, the upper bottom of the trapezoid is far away from the transmission optical waveguide, and the lower bottom of the trapezoid is connected with the transmission optical waveguide.
The invention also provides a preparation method of the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber, which comprises the following steps:
depositing silicon dioxide on a silicon-on-insulator (SOI) to form a substrate;
carrying out graphical processing on the substrate by utilizing photoetching or electron beam exposure technology;
removing silicon dioxide from the patterned substrate by using an inductive plasma etching technology to form a containing groove, a silicon dioxide optical waveguide and a cantilever beam;
removing silicon on the SOI by utilizing a deep etching technology;
and laying a graphene film to obtain the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber.
Compared with the prior art, the invention has the advantages that:
according to the invention, the silicon dioxide optical waveguide is arranged in the accommodating groove, the refractive index difference is small, the limiting effect on light is weak, so that the silicon dioxide optical waveguide has a evanescent field with very high dispersion degree, the contact area between the evanescent field and the graphene film is large, the graphene film is in full contact with an optical field, the interaction force between the graphene film and an optical waveguide transmission mode can be enhanced, and the saturation absorption extinction ratio can be improved.
Thanks to the evanescent field with very high dispersion degree of the silica optical waveguide, the silica optical waveguide can be better matched with the sizes of the mode fields in the input optical device and the output optical device, so that the loss when the input optical device is coupled into the optical waveguide and the optical waveguide is coupled into the output optical device is lower, the gain value of the amplifier can be reduced, and the reduction of the integral power consumption of the mode-locked femtosecond laser is facilitated.
By utilizing the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber provided by the invention, in combination with other photonic components such as a miniaturized on-chip integrated SOA gain medium (semiconductor optical amplifier), an isolator, a wavelength division multiplexer and the like, the length of an annular cavity of the mode-locked femtosecond laser can be reduced, and the system stability is improved.
Drawings
Fig. 1 is a schematic plan view of an on-chip integrated graphene-silica optical waveguide saturable absorber according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken at A-A in FIG. 1;
FIG. 3 is a cross-sectional view taken at B-B of FIG. 1;
FIG. 4 is a cross-sectional view taken at C-C of FIG. 1;
FIG. 5 is a cross-sectional view taken at D-D of FIG. 1;
FIG. 6 is a cross-sectional view taken at E-E of FIG. 1;
in the figure: 1. a substrate; 10. an accommodating groove; 2. an input optical device; 3. an output optical device; 4. a silica optical waveguide; 40. a transmission optical waveguide; 41. an input optical waveguide; 42. an output optical waveguide; 5. a cantilever beam; 6. a graphene film.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Referring to fig. 1, and as will be understood in conjunction with fig. 2 to 6, an embodiment of the present invention provides an on-chip integrated graphene-silica optical waveguide saturable absorber, which includes a substrate 1, a silica optical waveguide 4, and a graphene thin film 6; the length direction, the width direction and the height direction of the substrate 1 are respectively defined as X, Y, Z directions, the upper surface of the substrate 1 is provided with a containing groove 10, the containing groove 10 shown in fig. 1 is a square groove, of course, other shapes such as a cylindrical groove can be adopted, and the containing groove 10 extends to two ends of the substrate 1 along the X direction to form a through groove structure;
referring to fig. 2 to 5, the silica optical waveguide 4 is located in the receiving groove 10 and the bottom of the silica optical waveguide is not in contact with the bottom of the receiving groove 10, the silica optical waveguide 4 is connected to the side wall of the receiving groove 10 through the cantilever beams 5, the number of the cantilever beams 5 is set according to actual requirements, and the number of the cantilever beams 5 is set on one side wall or two side walls of the silica optical waveguide 4, so as to support the silica optical waveguide 4 to be suspended in the receiving groove 10, the cantilever beams 5 and the substrate 1 can be made of silica material or other materials, if both are made of silica material, the same material as the silica optical waveguide 4 is used, so the manufacturing is simpler; two ends of the silicon dioxide optical waveguide 4 are respectively coupled with the input optical device 2 and the output optical device 3;
referring to fig. 1, the graphene film 6 covers the silica optical waveguide 4, and both sides of the graphene film at least partially cover the upper surface of the substrate 1 along the Y direction.
As understood in connection with fig. 6, the principle of the present invention is: compared with the refractive index difference between the core silicon and the outer cladding air of the silicon optical waveguide, the silicon dioxide optical waveguide 4 is arranged in the accommodating groove 10, the refractive index difference between the core silicon and the outer cladding air is smaller, the limiting effect on light is weaker, and therefore the graphene film optical waveguide has an evanescent field with very high dispersion degree, the contact area between the evanescent field and the graphene film is larger, the graphene film is enabled to be more fully contacted with an optical field, the interaction force between the graphene film and an optical waveguide transmission mode can be enhanced, and the saturation absorption extinction ratio can be improved.
Thanks to the evanescent field with very high dispersion degree of the silica optical waveguide 4, the silica optical waveguide 4 can be better matched with the sizes of the mode fields in the input optical device and the output optical device, so that the loss when the input optical device is coupled into the optical waveguide and the optical waveguide is coupled into the output optical device is lower, the gain value of the amplifier can be reduced, and the reduction of the integral power consumption of the mode-locked femtosecond laser is facilitated.
By utilizing the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber provided by the invention and combining with other photonic components such as a miniaturized on-chip integrated SOA gain medium (semiconductor optical amplifier), an isolator, a wavelength division multiplexer and the like, the length of an annular cavity of the mode-locked femtosecond laser can be reduced, the system stability is improved, and the repetition frequency of the laser is higher.
Referring to fig. 6, in the present invention, the strength of the interaction force of the transmission mode of the graphene film 6 and the silica optical waveguide 4, that is, the coupling between the evanescent field and the graphene film 6, can be controlled by the cross-sectional dimension (Y/Z direction) of the silica optical waveguide 4 and the length design of the silica optical waveguide 4, in this embodiment, the cross-sectional dimension of the silica optical waveguide 4 is 300 to 5000nm in the Y direction and 3 to 10 μm in the Z direction. The silicon dioxide optical waveguide 4 is of a chip-level size and can be integrated with a miniaturized on-chip integrated SOA gain medium (a semiconductor optical amplifier) to form a chip integrated pulse femtosecond laser;
referring to fig. 4, the graphene film 6 may be a single layer or a stack of multiple graphene layers, and the size of the graphene film 6 in the Z direction is 0.34-3.4 nm. After the graphene film 6 is mechanically transferred to the silicon dioxide optical waveguide 4, the protective adhesive on the surface of the graphene layer does not need to be removed, so that the quality of the graphene film 6 is improved, the performance of a device is improved, and the graphene film 6 does not need to be subjected to graphical processing.
In the invention, at least one of the two groove side walls of the containing groove 10 is connected with the side wall of the silicon dioxide optical waveguide 4 through a plurality of cantilever beams 5, the plurality of cantilever beams 5 are arranged at intervals along the X direction, and the distance between two adjacent cantilever beams 5 in the plurality of cantilever beams 5 is 3-10 μm.
Referring to fig. 1, two groove sidewalls of the accommodating groove 10 are respectively connected to two sidewalls of the silica optical waveguide 4 through a plurality of cantilever beams 5, and the plurality of cantilever beams 5 between each groove sidewall and the silica optical waveguide 4 are arranged at intervals along the X direction, and meanwhile, the cantilever beams 5 located at two sides of the silica optical waveguide 4 are symmetrically distributed with respect to the silica optical waveguide 4.
The on-chip integrated graphene silicon dioxide optical waveguide saturable absorber provided by the embodiment further comprises an input optical device 2 and an output optical device 3, wherein the input optical device 2 and the output optical device 3 are respectively located at two ends of the substrate 1 along the X direction, and the input optical device 2 and the output optical device 3 can adopt single-mode, multi-mode optical fibers and other optical waveguide structures.
The dimension of the cantilever 5 in the Z direction is smaller than or equal to the dimension of the silica optical waveguide 4 in the Z direction.
Referring to fig. 1, in the X direction, the silica optical waveguide 4 includes an input optical waveguide 41, a transmission optical waveguide 40, and an output optical waveguide 42 connected in sequence, where the input optical waveguide 41 and the output optical waveguide 42 are respectively used for coupling with the input optical device 2 and the output optical device 3; the projections of the input optical waveguide 41 and the output optical waveguide 42 on the XY plane are trapezoidal, and the upper base of the trapezoid is away from the transmission optical waveguide 40, and the lower base thereof is connected to the transmission optical waveguide 40. In this embodiment, the projections of the input optical waveguide 41 and the output optical waveguide 42 on the XY plane are isosceles trapezoids.
The embodiment of the invention also provides a preparation method of the upper integrated graphene silicon dioxide optical waveguide saturable absorber, which comprises the following steps:
s1: depositing silicon dioxide on a silicon-on-insulator (SOI) to form a substrate 1;
s2: carrying out patterning processing on the substrate 1 by utilizing photoetching or electron beam exposure technology;
s3: removing silicon dioxide from the substrate 1 after the patterning treatment by using an inductive plasma etching technology to form a containing groove 10, a silicon dioxide optical waveguide 4 and a cantilever beam 5;
s4: removing silicon on the SOI by utilizing a deep etching technology;
s6: and laying a graphene film 6 to obtain the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber.
In the embodiment, the silicon dioxide is deposited and treated, so that the silicon dioxide optical waveguide 4 and the cantilever 5 are made of the same material as the substrate 1, and the preparation is simple.
Of course, the materials of the substrate 1, the silica optical waveguide 4 and the cantilever 5 may be different from each other, and there are many manufacturing processes.
In addition, for the silicon-on-insulator SOI, the silicon-on-insulator SOI comprises a silicon substrate layer, a silicon dioxide middle layer and a silicon top layer, so that the silicon top layer can be directly etched, and a silicon dioxide optical waveguide 4 and a cantilever 5 are etched on the silicon dioxide middle layer.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Those not described in detail in this specification are within the skill of the art.
Claims (10)
1. An on-chip integrated graphene silica optical waveguide saturable absorber, comprising:
the substrate (1), its length, width and direction of height define X, Y, Z directions respectively, the upper surface of the said substrate (1) offers the holding tank (10), the said holding tank (10) extends to the both ends of the substrate (1) along X direction;
the silicon dioxide optical waveguide (4) is positioned in the containing groove (10), the bottom of the silicon dioxide optical waveguide is not contacted with the bottom of the containing groove (10), the silicon dioxide optical waveguide (4) is connected to the side wall of the containing groove (10) through a cantilever beam (5), and two ends of the silicon dioxide optical waveguide (4) are respectively used for being coupled with the input optical device (2) and the output optical device (3);
and the graphene film (6) covers the silicon dioxide optical waveguide (4), and both sides of the graphene film at least partially cover the upper surface of the substrate (1) along the Y direction.
2. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, wherein: the size of the cross section of the silicon dioxide optical waveguide (4) is 300-5000 nm in the Y direction and 3-10 mu m in the Z direction.
3. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, wherein: the size of the graphene film (6) in the Z direction is 0.34-3.4 nm.
4. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, wherein: at least one of the two groove side walls of the containing groove (10) is connected with the side wall of the silicon dioxide optical waveguide (4) through a plurality of cantilever beams (5), and the plurality of cantilever beams (5) are arranged at intervals along the X direction.
5. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 4, wherein: in the plurality of cantilever beams (5), the distance between two adjacent cantilever beams (5) is 3-10 mu m.
6. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 4, wherein: the two groove side walls of the containing groove (10) are respectively connected with the two side walls of the silicon dioxide optical waveguide (4) through a plurality of cantilever beams (5), the plurality of cantilever beams (5) between each groove side wall and the side wall of the silicon dioxide optical waveguide (4) are arranged at intervals along the X direction, and meanwhile, the cantilever beams (5) positioned on the two sides of the silicon dioxide optical waveguide (4) are symmetrically distributed relative to the silicon dioxide optical waveguide (4).
7. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, wherein: the X-direction-oriented optical fiber laser device further comprises an input optical device (2) and an output optical device (3), wherein the input optical device (2) and the output optical device (3) are respectively located at two ends of the substrate (1) along the X direction.
8. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, wherein: the dimension of the cantilever beam (5) in the Z direction is less than or equal to the dimension of the silicon dioxide optical waveguide (4) in the Z direction.
9. The on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, wherein: along the X direction, the silicon dioxide optical waveguide (4) comprises an input optical waveguide (41), a transmission optical waveguide (40) and an output optical waveguide (42) which are sequentially connected, wherein the input optical waveguide (41) and the output optical waveguide (42) are respectively used for being coupled with an input optical device (2) and an output optical device (3); the projection of the input optical waveguide (41) and the projection of the output optical waveguide (42) on the XY plane are trapezoidal, the upper bottom of the trapezoid is far away from the transmission optical waveguide (40), and the lower bottom of the trapezoid is connected with the transmission optical waveguide (40).
10. The method of preparing the on-chip integrated graphene-silica optical waveguide saturable absorber of claim 1, comprising the steps of:
depositing silicon dioxide on a silicon-on-insulator (SOI) to form a substrate (1);
carrying out patterning treatment on the substrate (1) by utilizing photoetching or electron beam exposure technology;
removing silicon dioxide from the substrate (1) after the patterning treatment by using an inductive plasma etching technology to form a containing groove (10), a silicon dioxide optical waveguide (4) and a cantilever beam (5);
removing silicon on the SOI by utilizing a deep etching technology;
and laying a graphene film (6) to obtain the on-chip integrated graphene silicon dioxide optical waveguide saturable absorber.
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