CN110649171A - High-efficiency perovskite blue light-emitting diode with stable light-emitting color - Google Patents

High-efficiency perovskite blue light-emitting diode with stable light-emitting color Download PDF

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CN110649171A
CN110649171A CN201910922390.0A CN201910922390A CN110649171A CN 110649171 A CN110649171 A CN 110649171A CN 201910922390 A CN201910922390 A CN 201910922390A CN 110649171 A CN110649171 A CN 110649171A
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谢志元
王海龙
吴江
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Changchun Institute of Applied Chemistry of CAS
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Changchun Institute of Applied Chemistry of CAS
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    • H—ELECTRICITY
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

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Abstract

The invention relates to a perovskite blue light emitting diode with high efficiency and stable light emitting color, and belongs to the technical field of light emitting diodes. The technical problems of low luminous efficiency and unstable luminous color of the blue light emitting diode in the prior art are solved. The blue light-emitting diode is of an upright structure and comprises an anode, a hole injection layer, a light-emitting layer, an electron injection layer and a cathode which are sequentially arranged from bottom to top, and an interface modification layer can be arranged between the hole injection layer and the light-emitting layer; the material of the light emitting layer is a blue-light perovskite material processed by isopropanol, the material of the interface modification layer is AB, A is an alkali metal element, and B is a halogen element. The blue light emitting diode has high brightness and high electroluminescent external quantum efficiency, and the electroluminescent spectrum can show better stability under the drive of different voltages and time.

Description

High-efficiency perovskite blue light-emitting diode with stable light-emitting color
Technical Field
The invention belongs to the technical field of light-emitting diodes, and particularly relates to a perovskite blue light-emitting diode with high efficiency and stable light-emitting color.
Background
Perovskite electroluminescent diodes (PeLEDs) have made rapid progress in a short period of years, have the advantages of economy, easy adjustment of luminescent color, high color purity, solution processibility, and the like, and are expected to show great potential in low-cost, high-quality, large-size, flexible display and lighting applications in the future.
The structure of the PeLEDs is the same as that of an organic electroluminescent diode and a quantum dot electroluminescent diode except for a luminescent layer material, and the PeLEDs are divided into an upright structure and an inverted structure. The positive structure generally adopts an anode/a hole injection layer/a light-emitting layer/an electron injection layer/a cathode, and the inverted structure generally adopts a sandwich structure of the cathode/the electron injection layer/the light-emitting layer/the hole injection layer/the anode. The electrode material is usually tin dioxide conductive glass (ITO), aluminum (Al), silver (Ag), gold (Au) and the like doped with indium. The hole injection layer is usually poly (3, 4-ethylenedioxythiophene), poly (styrenesulfonate) (PEDOT: PSS), nickel oxide (NiO)x) Molybdenum oxide (MoO)x) And the like. As the electron injection layer, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi), 1,3, 5-tris [ (3-pyridyl) -3-phenyl ] is generally used]Benzene (TmPyPb), zinc oxide, and the like.
In the prior art, the electroluminescent external quantum efficiency of red and green pelds has broken through 20%, and the performance gap between pelds and organic electroluminescent diodes and quantum dot electroluminescent diodes has been greatly shortened (Nature,562,245,2018; Nature,562,249,2018; adv. mater.1901517, 2019.). Blue light is one of the three primary colors and has irreplaceable effect on future Pelens in flat panel display and white light illumination applications. However, the performance of blue pelds is far behind that of red pelds and green pelds, and the problems of low luminous efficiency, poor luminous stability, short service life of devices and the like exist.
In view of this, the development of efficient and stable blue-light PeLEDs has important scientific significance and practical application value.
Disclosure of Invention
The invention provides a perovskite blue light emitting diode with high efficiency and stable light emitting color, aiming at solving the technical problems of low light emitting efficiency and unstable light emitting color of blue light Pelens in the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows:
the invention provides a perovskite blue light emitting diode with high efficiency and stable light emitting color, which is of a positive structure and comprises an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode which are sequentially arranged from bottom to top;
the material of the light emitting layer is a blue light perovskite material treated by isopropanol.
Further, an interface modification layer is arranged between the hole injection layer and the light-emitting layer, the material of the interface modification layer is AB, A is an alkali metal element, and B is a halogen element.
Furthermore, the material of the interface modification layer is rubidium chloride (RbCl).
Furthermore, the preparation method of the interface modification layer comprises the following steps: and dissolving the AB in a solvent, uniformly stirring to obtain a solution containing the AB, spin-coating the solution containing the AB on the hole injection layer, and drying to obtain the interface modification layer.
Further, the solvent is dimethyl sulfoxide (DMSO); the AB concentration in the solution containing AB is 4 mg/mL; the spin speed was 3000 rpm for 30 seconds.
Further, the blue perovskite material is RbCl, CsBr and PbBr2Mixture of (1), RbCl, CsBr and PbBr2Is 2.9:1.1: 2.
Further, the preparation method of the light-emitting layer comprises the following steps: dissolving a blue-light perovskite material in a solvent, stirring and mixing uniformly to obtain a blue-light perovskite precursor solution, spin-coating the blue-light perovskite precursor solution on a hole injection layer or an interface modification layer, in the whole spin-coating process, after spin-coating for a period of time, dropwise adding isopropanol to a spin-coating surface, continuing spin-coating for a period of time, and after the spin-coating is finished, annealing to obtain a light-emitting layer.
Further, the solvent is dimethyl sulfoxide (DMSO); the concentration of the blue-light perovskite material in the blue-light perovskite precursor solution is 0.2 mol/L; the spin-coating speed is 4000 rpm, the spin-coating process is 1 minute totally, after the spin-coating instrument works for 40 seconds, 250 mu l of isopropanol is dripped on the spin-coating surface, and the spin-coating is continued for 20 seconds.
Further, the thickness of the light emitting layer is 40 nm.
Further, in the above-mentioned case,
the anode is made of ITO (indium tin oxide), the square resistance of the ITO is less than or equal to 15 omega/□, the transmittance is greater than or equal to 86%, and the thickness of the anode is 135 nm;
the hole injection layer is made of PEDOT and PSS, the mass ratio of PEDOT to PSS is 1:6, and the thickness of the hole injection layer is 30 nm;
the material of the electron injection layer is TmPyPb, and the thickness of the electron injection layer is 60 nm;
the cathode is made of LiF/Al, the thickness of LiF is 1nm, and the thickness of Al is 100 nm.
Further, in the above-mentioned case,
the anode is cleaned by alkali liquor, deionized water, blow-dried, dried and cleaned by ultraviolet ozone before use;
the hole injection layer is prepared by spin coating PEDOT, PSS aqueous solution and drying;
the electron injection layer and the cathode are prepared by vacuum evaporation.
Compared with the prior art, the invention has the following beneficial effects:
according to the perovskite blue light emitting diode with high efficiency and stable light emitting color, isopropanol is introduced for treatment in the process of processing the light emitting layer by using solution, so that the brightness and electroluminescent external quantum efficiency of the device are improved, and the brightness and electroluminescent external quantum efficiency are improved by about 4 times compared with those of an untreated device.
According to the perovskite blue light emitting diode with high efficiency and stable light emitting color, the interface modification layer is further arranged between the hole injection layer and the light emitting layer, so that the brightness and electroluminescent external quantum efficiency of the device are greatly improved, and the brightness and electroluminescent external quantum efficiency are improved by about 14 times compared with those of an untreated device.
The high-efficiency perovskite blue light emitting diode with stable light emitting color has good stability under the drive of different voltages and time.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a high-efficiency, stable-emission color perovskite blue light-emitting diode according to the present invention.
Fig. 2 is a schematic structural diagram of the perovskite blue light emitting diode with high efficiency and stable light emitting color of the invention.
Fig. 3 is a graph of current density-voltage-luminance characteristics of the light emitting devices in comparative example 1, example 1 and example 2 of the present invention.
Fig. 4 is a graph of current efficiency-voltage characteristics of the light emitting devices in comparative example 1, example 1 and example 2 of the present invention.
Fig. 5 is an external quantum efficiency-luminance characteristic diagram of electroluminescence of the light emitting devices in comparative example 1, example 1 and example 2 of the present invention.
FIG. 6 is a graph showing normalized electroluminescence spectra of light-emitting devices in comparative example 1, example 1 and example 2 of the present invention.
FIG. 7 is a graph showing electroluminescence spectra of light-emitting devices in comparative example 1, example 1 and example 2 of the present invention under different voltage driving.
Fig. 8 is a graph showing electroluminescence spectra of the light emitting devices in comparative example 1, example 1 and example 2 of the present invention at different driving times.
In the figure, 1, an anode, 2, a hole injection layer, 3, a light-emitting layer, 4, an electron injection layer, 5, a cathode, 6 and an interface modification layer.
Detailed Description
For a further understanding of the invention, preferred embodiments of the invention are described below in conjunction with the detailed description, but it is to be understood that the description is intended to further illustrate features and advantages of the invention, and not to limit the claims of the invention.
The perovskite blue light emitting diode with high efficiency and stable light emitting color has two structures.
A hole injection layer is processed based on isopropanol to improve the brightness of a device and the external quantum efficiency of electroluminescence, as shown in figure 1, the light-emitting diode is of a positive structure and comprises an anode 1, a hole injection layer 2, a light-emitting layer 3, an electron injection layer 4 and a cathode 5 which are sequentially arranged from bottom to top, wherein the light-emitting layer 3 is made of a blue-light perovskite material processed by the isopropanol.
Another mode is that the hole injection layer is processed based on isopropanol and an interface modification layer is added in combination, so that the brightness and the external quantum efficiency of electroluminescence of the device are further improved, as shown in fig. 2, the light-emitting diode is of a front-mounted structure and comprises an anode 1, a hole injection layer 2, an interface modification layer 6, a light-emitting layer 3, an electron injection layer 4 and a cathode 5 which are sequentially arranged from bottom to top, wherein the light-emitting layer 3 is made of a blue-light perovskite material processed by the isopropanol, the interface modification layer is made of a compound AB, a is an alkali metal element, and B is a halogen element.
In both of the above-mentioned embodiments, the thickness of the light-emitting layer 3 is 40 nm. The preparation method of the luminescent layer 3 comprises the following steps: the preparation method comprises the steps of dissolving a blue-light perovskite material in a solvent, stirring and mixing uniformly to obtain a blue-light perovskite precursor solution, spin-coating the blue-light perovskite precursor solution on a hole injection layer 2 or an interface modification layer 3 (if the interface modification layer 6 is not contained, the blue-light perovskite precursor solution is spin-coated on the hole injection layer 2, if the interface modification layer 6 is contained, the blue-light perovskite precursor solution is spin-coated on the interface modification layer 6), in the whole spin-coating process, after spin-coating for a period of time, dropwise adding isopropanol on a spin-coated surface, continuing to spin-coat for a period of time, and after the. The solvent can be common spin coating solvent such as DMSO; the concentration of the blue-light perovskite material in the blue-light perovskite precursor solution is 0.2 mol/L; if the spin coating process is 1 minute in total, after the spin coater works for 40 seconds, 250 mu l of isopropanol is dripped on the spin coating surface, and the spin coating is continued for 20 seconds; the spin coating speed is 4000 revolutions per minute; the blue perovskite material is RbCl, CsBr and PbBr2Mixture of (1), RbCl, CsBr and PbBr2In a molar ratio of 2.9:1.1: 2; the annealing temperature is generally 70 ℃ and the annealing time is 30 minutes.
In the two technical schemes, the preparation method of the interface modification layer 6 comprises the following steps: and dissolving the AB in a solvent, uniformly stirring to obtain a solution containing the AB, spin-coating the solution containing the AB on the hole injection layer, and drying to obtain the interface modification layer 6. The solvent can be common spin coating solvent such as DMSO; the AB concentration in the solution containing AB is 4 mg/mL; the spin-coating speed is 3000 r/min, and the time is 30 seconds; the interface modification layer 6 is made of RbCl; the drying conditions were 70 ℃ for 5 minutes.
In the two technical schemes, the anode 1, the hole injection layer 2, the electron injection layer 4 and the cathode 5 are all of the conventional structures of the light-emitting diode. The invention preferably comprises the following components: the anode 1 is made of ITO (indium tin oxide), the ITO sheet resistance is less than or equal to 15 omega, the transmittance is greater than or equal to 86 percent, and the thickness of the anode 1 is 135 nm; the hole injection layer 2 is made of PEDOT/PSS with the mass ratio of 1:6, and the thickness of the hole injection layer 2 is 30 nm; the material of the electron injection layer 4 is TmPyPb, and the thickness of the electron injection layer 4 is 60 nm; the cathode 5 is made of LiF/Al, LiF and Al are arranged from bottom to top, the thickness of LiF is 1nm, and the thickness of Al is 100 nm. The anode 1, the hole injection layer 2, the electron injection layer 4 and the cathode 5 can be prepared by methods known to those skilled in the art, without any special limitation, such as the anode is commercially available and is cleaned by alkali liquor, deionized water, blow-drying, drying (120 ℃, 30 minutes) and ultraviolet ozone before use; the hole injection layer is prepared by spin coating a PEDOT (Poly ethylene glycol ether ketone) PSS aqueous solution and then drying, wherein the spin coating rotation speed is preferably 5000 r/min, and the time is preferably 1 min; the electron injection layer 4 and the cathode 5 were vacuum-evaporated (vacuum degree less than 1X 10)-4Pascal).
The blue PeLEDs used in this embodiment have an effective light emitting area of 3.5 × 4 square millimeters, but are not limited thereto.
In order to make the technical solutions of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to the following embodiments and the accompanying drawings.
In the following examples, various procedures and methods not described in detail are conventional methods well known in the art. Materials, reagents, devices, instruments, apparatuses and the like used in the following examples are commercially available unless otherwise specified.
Comparative example 1
Step one, cleaning the patterned ITO anode 1 with alkali liquor and deionized water in sequence, drying the patterned ITO anode with nitrogen, drying the patterned ITO anode in an oven at 130 ℃, and cooling the patterned ITO anode to room temperature. After being cleaned by ultraviolet ozone for 40 minutes, the glass is placed on a bracket of a spin coater. Uniformly coating the filtered PEDOT/PSS (mass ratio of 1:6) aqueous solution on the ITO, spin-coating for 1 minute at 5000 r/min, placing in an oven at 120 ℃ for 30 minutes, and cooling to room temperature to obtain a 30 nm-thick hole injection layer 2.
Step two, stirring and filtering the well-stirred RbCl, CsBr and PbBr2Uniformly coating a DMSO solution (0.2mol/L) on the hole injection layer 2, spin-coating for 1 minute at 4000 rpm, and annealing at 70 ℃ for 20 minutes to obtain a perovskite blue light emitting layer 3 with the thickness of 40 nm; the RbCl, CsBr and PbBr2The molar ratio of (A) to (B) was 2.9:1.1:2, and stirring was carried out at 45 ℃ overnight.
And step three, placing the substrate with the luminous layer 3 in a vacuum coating machine. When the vacuum degree is lower than 1 x 10-4In Pascal, TmPyPb with a thickness of 60nm is deposited on the light-emitting layer 3 as the electron injection layer 4, and then the temperature is reduced to 100 ℃.
And step four, sequentially carrying out vacuum evaporation on LiF with the thickness of 1nm and Al with the thickness of 100nm on the electron injection layer 4 to serve as a cathode 5, and finally obtaining the blue-light PelLEDs with the structure of ITO/PEDOT, PSS/perovskite blue-light luminescent layer/TmPyPb/LiF/Al, which are recorded as the device 1. In the process of using the evaporated metal aluminum (Al) as the cathode, the mask plate is used for controlling the area of the cathode, so that the effective light emitting area of the blue light Pelens is 3.5 multiplied by 4 square millimeters.
The performance indexes of the blue PeLEDs prepared in comparative example 1 are shown in table 1, and the associated current density-voltage-luminance characteristic diagram, current efficiency-voltage characteristic diagram, external quantum efficiency-luminance characteristic diagram of electroluminescence, normalized electroluminescence spectrum diagram, and electroluminescence spectrum diagrams at different driving voltages and times are respectively shown in the device 1 curves of fig. 3 to 8.
Example 1
Step one, cleaning the patterned ITO anode 1 with alkali liquor and deionized water in sequence, drying the patterned ITO anode with nitrogen, drying the patterned ITO anode in an oven at 130 ℃, and cooling the patterned ITO anode to room temperature. After being cleaned by ultraviolet ozone for 40 minutes, the glass is placed on a bracket of a spin coater. Uniformly coating the filtered PEDOT/PSS (mass ratio of 1:6) aqueous solution on the ITO, spin-coating for 1 minute at 5000 r/min, placing in an oven at 120 ℃ for 30 minutes, and cooling to room temperature to obtain a 30 nm-thick hole injection layer 2.
Step two, stirring and filtering the well-stirred RbCl, CsBr and PbBr2The DMSO solution (0.2mol/L) was uniformly coated on the hole injection layer 2 at a rotation speed of 4000 rpm for 1 minute for the entire spin coating process, and after the spin coater was operated for 40 seconds, 250 μ L of isopropyl alcohol was dropped on the hole injection layer 2 which was still rotating, and the spin coating was continued for 20 seconds. After the spin coating is finished, placing the film on a hot bench at 70 ℃ for annealing for 20 minutes to obtain a perovskite blue light emitting layer 3 with the thickness of 40 nm; the RbCl, CsBr and PbBr2The molar ratio of (A) to (B) was 2.9:1.1:2, and stirring was carried out at 45 ℃ overnight.
Thirdly, placing the substrate with the luminous layer 3 in a vacuum coating machine, and when the vacuum degree is lower than 1 multiplied by 10-4In Pascal, TmPyPb with a thickness of 60nm is deposited on the light-emitting layer 3 as the electron injection layer 4, and then the temperature is reduced to 100 ℃.
And step four, sequentially carrying out vacuum evaporation on LiF with the thickness of 1nm and Al with the thickness of 100nm on the electron injection layer 4 to be used as a cathode 5, and obtaining the blue-light PelLEDs with the structure of ITO/PEDOT, PSS/perovskite blue-light luminescent layer/TmPyPb/LiF/Al, which are recorded as the device 2. In the process of using the evaporated metal aluminum (Al) as the cathode, the mask plate is used for controlling the area of the cathode, so that the effective light emitting area of the blue light Pelens is 3.5 multiplied by 4 square millimeters.
The performance indexes of the blue PeLEDs prepared in example 1 are shown in table 1, and the associated current density-voltage-luminance characteristic diagram, current efficiency-voltage characteristic diagram, external quantum efficiency-luminance characteristic diagram of electroluminescence, normalized electroluminescence spectrum diagram, and electroluminescence spectrum diagrams at different driving voltages and times are respectively shown in device 2 curves of fig. 3 to 8.
EXAMPLE 2
Step one, cleaning the patterned ITO anode 1 with alkali liquor and deionized water in sequence, drying the patterned ITO anode with nitrogen, drying the patterned ITO anode in an oven at 130 ℃, and cooling the patterned ITO anode to room temperature. After being cleaned by ultraviolet ozone for 40 minutes, the glass is placed on a bracket of a spin coater. Uniformly coating the filtered PEDOT/PSS (mass ratio of 1:6) aqueous solution on the ITO, spin-coating for 1 minute at 5000 r/min, placing in an oven at 120 ℃ for 30 minutes, and cooling to room temperature to obtain a 30 nm-thick hole injection layer 2.
Step two, uniformly coating the stirred DMSO solution of RbCl on the hole injection layer 2, and spin-coating at 3000 rpm for 30 seconds to obtain an interface modification layer 6; the concentration of the DMSO solution of RbCl is 4 mg/mL.
Step three, mixing the well-stirred and filtered RbCl, CsBr and PbBr2The DMSO solution (0.2mol/L) is uniformly coated on the interface modification layer 6, the spin-coating speed is 4000 revolutions per minute, the whole spin-coating process is 1 minute, after the spin-coating instrument works for 40 seconds, 250 mu L of isopropanol is dripped on the interface modification layer 6 which is still rotating, and the spin-coating is continued for 20 seconds. After the spin coating is finished, placing the film on a hot bench at 70 ℃ for annealing for 20 minutes to obtain a perovskite blue light emitting layer 3 with the thickness of 40 nm; the RbCl, CsBr and PbBr2The molar ratio of (A) to (B) was 2.9:1.1:2, and stirring was carried out at 45 ℃ overnight.
Fourthly, the substrate with the luminous layer 3 is placed in a vacuum coating machine, and when the vacuum degree is lower than 1 multiplied by 10-4In Pascal, TmPyPb with a thickness of 60nm is deposited on the light-emitting layer 3 as the electron injection layer 4, and then the temperature is reduced to 100 ℃.
And fifthly, sequentially performing vacuum evaporation on the electron injection layer 4 to form LiF with the thickness of 1nm and Al with the thickness of 100nm as a cathode 5, and obtaining the blue-light PelLEDs with the device structures of ITO/PEDOT, PSS/RbCl/perovskite blue-light luminescent layer/TmPyPb/LiF/Al, wherein the blue-light PelLEDs are recorded as the device 3. In the process of using the evaporated metal aluminum (Al) as the cathode, the mask plate is used for controlling the area of the cathode, so that the effective light emitting area of the blue light Pelens is 3.5 multiplied by 4 square millimeters.
The performance indexes of the blue PeLEDs prepared in example 2 are shown in table 1, and the associated current density-voltage-luminance characteristic diagram, current efficiency-voltage characteristic diagram, external quantum efficiency-luminance characteristic diagram of electroluminescence, normalized electroluminescence spectrum diagram, and electroluminescence spectrum diagrams at different driving voltages and times are respectively shown in device 3 curves of fig. 3 to 8.
Table 1 shows various performance indexes of the blue PeLEDs of comparative example 1, example 1 and example 2, including device turn-on voltage, maximum luminance, maximum current efficiency, maximum electroluminescence external quantum efficiency, electroluminescence spectrum peak position and half-peak width, and color coordinate 1931.
TABLE 1
Figure BDA0002217948860000091
As can be seen from table 1, the high-efficiency, stable-color-emitting perovskite blue light emitting diode of the present invention improves the luminance, current efficiency and external electroluminescent quantum efficiency of the device (example 1) by performing the isopropyl alcohol treatment on the light emitting layer 2, and improves the luminance, current efficiency and external electroluminescent quantum efficiency by about 4 times compared with the untreated device (comparative example 1); further, by arranging the interface modification layer 6 between the hole injection layer 2 and the light-emitting layer 3, the brightness, the current efficiency and the external quantum efficiency of electroluminescence of the device are greatly improved (embodiment 2), and are improved by about 14 times compared with an untreated device (comparative example 1). In addition, by introducing isopropanol treatment or arranging the interface modification layer 6, the electroluminescence spectrum of the device still shows better stability under different voltage and time driving.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. The perovskite blue light emitting diode with high efficiency and stable light emitting color is characterized in that the light emitting diode is of a positive structure and comprises an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode which are sequentially arranged from bottom to top;
the material of the light emitting layer is a blue light perovskite material treated by isopropanol.
2. A high efficiency, color stable, luminescent perovskite blue light emitting diode as claimed in claim 1 wherein an interface modification layer is provided between the hole injection layer and the luminescent layer, the interface modification layer is made of AB, a is an alkali metal element, and B is a halogen element.
3. A high efficiency, color stable luminescent perovskite blue light emitting diode as claimed in claim 2 wherein the interface modification layer is made of rubidium chloride.
4. A high efficiency, color stable, luminescent perovskite blue light emitting diode as claimed in claim 2 wherein the interface modification layer is prepared by the method comprising: and dissolving the AB in a solvent, uniformly stirring to obtain a solution containing the AB, spin-coating the solution containing the AB on the hole injection layer, and drying to obtain the interface modification layer.
5. A high efficiency, light-emitting color stable, perovskite blue light-emitting diode as claimed in claim 4 wherein the solvent is dimethyl sulfoxide; the AB concentration in the solution containing AB is 4 mg/mL; the spin speed was 3000 rpm for 30 seconds.
6. A high efficiency, luminescent color-stable perovskite blue light-emitting diode as claimed in any one of claims 1 to 5 wherein the blue perovskite material is RbCl, CsBr and PbBr2Mixture of (1), RbCl, CsBr and PbBr2Is 2.9:1.1: 2.
7. A high efficiency, color stable luminescent perovskite blue light emitting diode as claimed in any of claims 1 to 5 wherein the luminescent layer is prepared by: dissolving a blue-light perovskite material in a solvent, stirring and mixing uniformly to obtain a blue-light perovskite precursor solution, spin-coating the blue-light perovskite precursor solution on a hole injection layer or an interface modification layer, in the whole spin-coating process, after spin-coating for a period of time, dropwise adding isopropanol to a spin-coating surface, continuing spin-coating for a period of time, and after the spin-coating is finished, annealing to obtain a light-emitting layer.
8. A high efficiency, light-emitting color-stable, perovskite blue light-emitting diode as claimed in claim 7 wherein the solvent is dimethyl sulfoxide; the concentration of the blue-light perovskite material in the blue-light perovskite precursor solution is 0.2 mol/L; the spin-coating speed is 4000 revolutions per minute, the spin-coating process is 1 minute totally, 250 mu l of isopropanol is dripped on the spin-coating surface after the spin-coating instrument works for 40 seconds, and the spin-coating is continued for 20 seconds; the thickness of the light-emitting layer was 40 nm.
9. A high efficiency, color stable, light emitting perovskite blue light emitting diode as claimed in any one of claims 1 to 5 wherein the anode material is ITO with sheet resistance of 15 Ω/□ or less, transmittance of 86% or more, and anode thickness of 135 nm;
the hole injection layer is made of PEDOT and PSS, the mass ratio of PEDOT to PSS is 1:6, and the thickness of the hole injection layer is 30 nm;
the material of the electron injection layer is TmPyPb, and the thickness of the electron injection layer is 60 nm;
the cathode is made of LiF/Al, the thickness of LiF is 1nm, and the thickness of Al is 100 nm.
10. A high efficiency, light-emitting, color-stable, perovskite blue light-emitting diode as claimed in any one of claims 1 to 5 wherein the anode is washed with lye, deionized water, blow dried, oven dried and UV ozone prior to use;
the hole injection layer is prepared by spin coating PEDOT, PSS aqueous solution and drying;
the electron injection layer and the cathode are prepared by vacuum evaporation.
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Application publication date: 20200103