CN110649160B - Inorganic charge transport layer, preparation method thereof and application of perovskite solar cell - Google Patents
Inorganic charge transport layer, preparation method thereof and application of perovskite solar cell Download PDFInfo
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Abstract
The invention provides a preparation method of an inorganic charge transport layer, which comprises the following steps of taking nano particles, adding a surface modifier, obtaining monodisperse inorganic nano particles with uniform size and containing the surface modifier by adopting a solvothermal method or a hydrothermal reaction method, and then stably dispersing the monodisperse inorganic nano particles in a nonpolar solvent to obtain a preparation agent; depositing the obtained mixture on a perovskite absorption layer, and carrying out high-temperature annealing on the mixture under the protection of inert gas to obtain an inorganic charge transmission layer of the target perovskite solar cell; the invention also provides a perovskite solar cell comprising the inorganic charge transport layer; the method can avoid the formation of holes due to the agglomeration of nano-particles; and most of residual organic matter long chains on the surface of the inorganic nanocrystalline are removed while the perovskite is not damaged, and the rest is in an amorphous carbon form, so that the density and the conductivity of the charge transmission layer are improved, and the efficiency and the long-term stability of the perovskite solar cell are improved.
Description
Technical Field
The invention relates to the technical field of perovskite solar cells, in particular to an inorganic charge transport layer, a preparation method thereof and application of the perovskite solar cell.
Background
With the increasing shortage of energy sources, people pay more attention to the research on new energy sources, particularly solar cells. The traditional silicon cell has relatively high cost, large energy consumption and large pollution in the production and manufacturing process, and the new generation of dye-sensitized cell and organic solar cell has too low equivalent rate and poor stability, so that the silicon cell has a plurality of problems in industrialization.
Since the first report in 2009, perovskite solar cells are favored by researchers through ultra-low material cost and solution-soluble preparation process, and the energy conversion efficiency is improved to 22.1% from the initial 3.8%. With the continuous and deep research, the efficiency of the cell is more likely to exceed that of the single crystal silicon solar cell which is developed and matured at present. In the new generation of photovoltaic technology, perovskite solar cells are likely to be industrialized first.
In terms of photoelectric conversion efficiency, perovskite solar cells have crossed the threshold of industrialization, but the stability problem of devices constitutes the bottleneck of industrial application thereof. The stability of the battery device is directly related to the instability of the organic components of the device. For example, volatilization of organic components of organic-inorganic hybrid perovskite, crystallization of organic hole transport material Spiro-OMeTAD, temperature and humidity sensitivity and the like. The development of an all-inorganic perovskite material for replacing an organic-inorganic hybrid perovskite material, the development of an all-inorganic interface material for replacing an organic interface material, and the construction of an all-inorganic perovskite solar cell becomes an important development trend in the field at present. Among them, how to coat a layer of flat and compact inorganic charge transport layer film with strong charge extraction capability and high chemical stability on the surface of the perovskite film by using a solution is a great challenge.
The nano material prepared by the conventional method is easy to agglomerate and uneven in size, and cannot be stably dispersed in a solvent, the high-quality nanocrystalline thin film is difficult to prepare by using the material, the surface of the thin film is usually rough, a large number of cracks or holes exist in the thin film, and the short circuit of a battery device is easily caused. However, in order to prevent the agglomeration of the nanoparticles, a layer of long-chain organic matter needs to be modified on the surface of the nanoparticles, or a surfactant needs to be added into a dispersion liquid, so that a large amount of organic matter residues exist in the nanoparticle film obtained after the solution is coated, the conductivity of the film is poor, the extraction and transmission of charges are not facilitated, and the efficiency of a battery device is low. Therefore, a proper scheme is needed to prepare a high-quality inorganic charge transport layer on the surface of the perovskite, so that the holes and defects of the film are reduced, the conductivity of the film is improved, and the efficiency and the stability of the device are improved on the premise of not influencing the properties of the perovskite film.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an inorganic charge transport layer and a preparation method thereof, and the method solves the problems that a large amount of organic matter residues exist in a nano-particle film, the conductivity of the film is poor, the extraction and the transmission of charges are not facilitated, and the efficiency of a battery device is low. The inorganic charge transport layer reduces holes and defects of the film, improves the conductivity of the film, and improves the efficiency and stability of the device. The invention also provides a perovskite solar cell comprising the inorganic charge transport layer, which enables most of residual organic matter long chains on the surface of the inorganic nanocrystalline to be removed, and the rest is in an amorphous carbon form, so that the density and the conductivity of the charge transport layer are improved, and the efficiency and the stability of the perovskite are greatly improved.
The invention is realized by the following steps:
one of the purposes of the invention is to provide a preparation method of an inorganic charge transport layer, which comprises the following steps:
and 2, depositing the preparation obtained in the step 1 on the perovskite absorption layer, and carrying out high-temperature annealing on the perovskite absorption layer under the protection of inert gas to obtain the inorganic charge transmission layer of the target perovskite solar cell.
Specifically, when the inorganic charge transport layer is an electron transport layer, the nanoparticles are n-type semiconductors and their composite or doped compounds, including TiO2，SnO2，In2O3，ZnO，CeO2At least one of CdS, ZnS.
Specifically, when the inorganic charge transport layer is a hole transport layer, the nanoparticles are p-type semiconductors and composite or doped compounds thereof, including NiO and Cu2O，CuCrO2，CuGaO2，MoO3，WO3At least one of (1).
Preferably, the non-polar solvent comprises any one of toluene, chlorobenzene, dichlorobenzene, n-hexane and diethyl ether, and the concentration of the non-polar solvent is 5-200 mg/mL.
Preferably, the surface modifier comprises any one of oleic acid, stearic acid, oleylamine, dodecylamine, tetradecylamine, hexadecylamine and octadecylamine.
Preferably, the size of the nanoparticles is 1-50 nm.
Preferably, the inert gas comprises any one of argon and nitrogen;
preferably, the annealing temperature is 150-550 ℃, and the annealing time is 1 minute-10 hours.
The second purpose of the invention is to provide the inorganic charge transport layer prepared by the method.
The perovskite solar cell comprises the inorganic charge transport layer, and the perovskite solar cell comprises a substrate, a transparent conductive electrode, a first transport layer, a perovskite absorption layer, a second transport layer and a metal electrode which are sequentially arranged from bottom to top and connected, wherein the first transport layer and the second transport layer are respectively a hole transport layer and an electron transport layer, or the first transport layer and the second transport layer are respectively an electron transport layer and a hole transport layer, and the second transport layer is the inorganic charge transport layer.
Preferably, the first transport layer is also the inorganic charge transport layer, and the preparation method thereof is as follows: the preparation agent used in the preparation method of the inorganic charge transport layer is deposited on the transparent conductive electrode and annealed at high temperature to obtain the inorganic charge transport layer.
Preferably, the perovskite absorption layer is an inorganic perovskite having a chemical formula ABX3The A, B, X bit elements are all inorganic chemical elements, the A bit element is at least one of Cs, Rb and K, the B bit element is at least one of Pb, Sn, Bi, Sr, Ca and Ba, and the X bit element is at least one of Cl, Br and I.
The invention has the beneficial effects that:
1. the inorganic charge provided by the inventionCompared with the prior art, the preparation method of the transmission layer is simple and practical, and the inorganic charge transmission layer film with flatness, compactness and high conductivity is prepared by depositing monodisperse inorganic charge transmission material nano particles and annealing the inorganic charge transmission material nano particles in inert atmosphere; on one hand, the pores can not be caused by the agglomeration of the nano particles; on the other hand, most of the residual organic matter long chains on the surface of the inorganic nanocrystalline are removed while the perovskite is not damaged, and the rest is in an amorphous carbon form, so that the conductivity and the chemical stability of the charge transport layer are improved, and the efficiency and the long-term stability of the perovskite solar cell are greatly improved; the perovskite solar cell comprising the inorganic charge transport layer has an effective active area of 1cm2When Ag is used as a metal electrode, the photoelectric conversion efficiency of the Ag is over 12 percent, the thermal stability is greatly improved, and the photoelectric conversion efficiency of the Ag-Ag photoelectric conversion device can be kept over; the preparation method provided by the invention has the advantages of simple preparation process and low cost, and is suitable for wide popularization.
2. The preparation method of the inorganic charge transport layer provided by the invention has certain universality and can be used for various oxides (TiO)2，SnO2，In2O3，ZnO，CeO2) The method is suitable for various sulfides (CdS and ZnS) and doped or composite compounds thereof, and can improve the open-circuit voltage, the short-circuit current and the photoelectric conversion efficiency of the perovskite solar cell by selecting the inorganic interface charge transmission material matched with the perovskite layer in energy level.
3. The inorganic nano material adopted by the invention has low price, the solution coating process has low cost, and the factors greatly reduce the cost of the perovskite solar cell.
Drawings
FIG. 1 is a schematic structural diagram of a perovskite solar cell provided by an embodiment of the invention; wherein 1, a substrate; 2. a transparent conductive electrode; 3. a first transport layer; 4. a perovskite absorption layer; 5. a second transport layer; 6. a metal electrode;
FIG. 2 is an optical photograph and Transmission Electron Microscopy (TEM) of several solutions of monodisperse inorganic nanoparticles;
FIG. 3 is a Scanning Electron Micrograph (SEM) and X-ray diffraction pattern (XRD) of several inorganic nanoparticle films; wherein the image (A) is a Scanning Electron Microscope (SEM); (B) the pattern is an X-ray diffraction pattern (XRD);
FIG. 4 is TiO2X-ray photoelectron spectroscopy (XPS) of the amorphous carbon composite film;
FIG. 5 is a diagram of a TiO-based optical fiber according to example 5 of the present invention2The device section of the all-inorganic perovskite solar cell of the electron transport layer;
FIG. 6 is a diagram of a TiO-based optical fiber according to example 5 of the present invention2A curve chart of 'photocurrent density-voltage' output characteristic of the all-inorganic perovskite solar cell of the electron transport layer;
FIG. 7 shows the results of the light stability and thermal stability tests of perovskite solar cells provided in example 5 of the present invention; wherein, the graph a is a thermal stability test, and the test conditions are as follows: the device is not packaged, and the device is in a water-free and oxygen-free nitrogen environment at 85 ℃ and in a dark state; b, a graph is an illumination stability test, and the test conditions are as follows: the device is not packaged, and the device is continuously illuminated at room temperature and the maximum power point in an anhydrous and oxygen-free nitrogen environment.
Detailed Description
The preparation method of the inorganic charge transport layer specifically comprises the following steps:
wherein, when the inorganic charge transmission layer is an electron transmission layer, the nanoparticles are n-type semiconductors and compound or doped compounds thereof, including TiO2，SnO2，In2O3，ZnO，CeO2At least one of CdS, ZnS.
When the inorganic charge transport layer is a hole transport layer, the nanoparticles are p-type semiconductors and their composite or doped compounds, includingNiO, Cu2O，CuCrO2，CuGaO2，MoO3，WO3At least one of (1).
FIG. 2 is an optical photograph and Transmission Electron Microscopy (TEM) image of several solutions of monodisperse inorganic nanoparticles. As can be seen from FIG. 2, the solution of inorganic nanoparticles is a transparent monodisperse solution, and the crystal size is uniform, about 5-15 nm.
And 2, depositing the preparation obtained in the step 1 on the perovskite absorption layer, and annealing the perovskite absorption layer at a high temperature under the protection of inert gas argon, wherein the annealing temperature is 150-550 ℃, and the annealing time is 1 minute-10 hours, so as to obtain the inorganic charge transmission layer of the target perovskite solar cell.
Perovskite solar cell and preparation thereof
As shown in fig. 1, the perovskite solar cell includes a glass substrate 1, a transparent conductive electrode 2, a first transmission layer 3, a perovskite absorption layer 4, a second transmission layer 5 and a metal electrode 6, which are sequentially arranged from bottom to top and connected with each other, wherein the first transmission layer 3 and the second transmission layer 5 are respectively a hole transmission layer and an electron transmission layer, or the first transmission layer 3 and the second transmission layer 5 are respectively an electron transmission layer and a hole transmission layer, and the second transmission layer 5 is the inorganic charge transmission layer. The second transmission layer 5 is a smooth and compact inorganic charge transmission layer film prepared by depositing monodisperse inorganic charge transmission material nanoparticles and annealing the inorganic charge transmission material nanoparticles in an inert atmosphere, and on one hand, holes cannot be caused by nanoparticle agglomeration; on the other hand, most of the residual organic matter long chains on the surface of the inorganic nanocrystalline are removed while the perovskite is not damaged, and the rest is in an amorphous carbon form, so that the conductivity and the chemical stability of the charge transport layer are improved, and the efficiency and the long-term stability of the perovskite solar cell are greatly improved.
Namely, two cases are included:
example 1 (first case): the glass substrate 1, the transparent conductive electrode 2, the hole transport layer, the perovskite absorption layer 4, the inorganic electron transport layer and the metal electrode 6 are sequentially arranged from bottom to top and are connected; the electron transport layer is an inorganic transport layerThe nanoparticles used are n-type semiconductors and their composite or doped compounds, including TiO2，SnO2，In2O3，ZnO，CeO2At least one of CdS, ZnS.
Example 2 (second case): the glass substrate 1, the transparent conductive electrode 2, the inorganic electron transport layer, the perovskite absorption layer 4, the inorganic hole transport layer and the metal electrode 6 are sequentially arranged from bottom to top and are connected; the hole transport layer is an inorganic transport layer, and the adopted nanoparticles are p-type semiconductors and compound or doped compounds thereof, including NiO and Cu2O，CuCrO2，CuGaO2，MoO3，WO3At least one of (1).
Preferably, the first transport layer is further changed into an inorganic charge transport layer, and the preparation method comprises the following steps: the preparation agent in the preparation method of the inorganic charge transport layer is deposited on the transparent conductive electrode and annealed at high temperature (the specific annealing conditions are the same as above). I.e. the third and fourth cases occur:
example 3 (third case): the glass substrate 1, the transparent conductive electrode 2, the inorganic hole transport layer, the perovskite absorption layer 4, the inorganic electron transport layer and the metal electrode 6 are sequentially arranged from bottom to top and are connected;
example 4 (fourth case): the glass substrate 1, the transparent conductive electrode 2, the inorganic electron transport layer, the perovskite absorption layer 4, the inorganic hole transport layer and the metal electrode 6 are sequentially arranged from bottom to top and are connected;
preferably, the perovskite absorption layer is an inorganic perovskite having a chemical formula ABX3The A, B, X bit elements are all inorganic chemical elements, the A bit element is at least one of Cs, Rb and K, the B bit element is at least one of Pb, Sn, Bi, Sr, Ca and Ba, and the X bit element is at least one of Cl, Br and I. Because the inorganic perovskite has higher crystallization temperature, the thermal decomposition of the perovskite cannot be caused in the high-temperature annealing process, and the chemical change of the perovskite cannot be caused when the annealing process is carried out in an inert atmosphere. Because the nano particles have small particle size and high dispersion without any agglomeration, the piled film is uniformThe inorganic perovskite solar cell is compact and free of holes, and therefore efficiency and stability of the inorganic perovskite solar cell are improved.
Here we focus on the discussion of example 5 (fifth case), namely: the glass substrate 1, the transparent conductive electrode 2, the inorganic hole transport layer, the inorganic perovskite absorption layer 4, the inorganic electron transport layer and the metal electrode 6 are sequentially arranged from bottom to top and are connected; is an all-inorganic perovskite solar cell;
or example 6 (sixth case), the electron transport layer is swapped with the hole transport layer, i.e.: the glass substrate 1, the transparent conductive electrode 2, the inorganic electron transport layer, the inorganic perovskite absorption layer 4, the inorganic hole transport layer and the metal electrode 6 are sequentially arranged from bottom to top and are connected; is an all-inorganic perovskite solar cell;
the inorganic perovskite solar cell of example 5 (fifth case) was prepared as follows:
(1) an inorganic hole transport layer is arranged on the upper surface of a transparent conductive electrode 2 provided with a glass substrate 1, a monodisperse NiO nano-particle solution with the particle size of 1-50nm and the concentration of 5-200mg/mL is adopted, and the inorganic hole transport layer is deposited on the surface of the transparent conductive glass through spin coating, scraper coating, slit coating or the like. Then, annealing the film at high temperature in an inert atmosphere, such as argon or nitrogen, wherein the annealing temperature is 150-550 ℃, and the annealing time is 1min-10 h;
(2) the inorganic perovskite absorption layer 4 is arranged on the upper surface of the inorganic hole transport layer, and the preparation method can adopt the existing conventional film coating mode, such as spin coating, scraper coating or slit coating.
(3) On the inorganic perovskite layer, monodisperse TiO is adopted2The nano particle solution with the particle size of 1-50nm and the concentration of 5-200mg/mL is deposited on the surface of the transparent conductive glass/the charge transport layer/the inorganic perovskite by spin coating, blade coating, slit coating or the like. Then annealing the nano-particles at the high temperature of 550 ℃ in an inert atmosphere such as argon or nitrogen for 1min-10h at the annealing temperature of 150-2Amorphous carbon composite electron transport layer.
(4) In TiO2And a high-conductivity metal electrode 6 such as Au, Ag, Al and the like is evaporated on the amorphous carbon composite electron transport layer.
FIG. 5 is an inorganic perovskite solar cell (based on TiO) of example 5 (fifth case)2All inorganic perovskite solar cells of the electron transport layer). The TiO prepared can be seen from FIG. 52The electron transport layer is a uniform and compact film.
Experimental example 1 Performance measurement of inorganic Charge transport layer (i.e., inorganic nanoparticle thin film)
FIG. 3 is a Scanning Electron Micrograph (SEM) and X-ray diffraction pattern (XRD) of several inorganic nanoparticle thin films. From the Scanning Electron Microscope (SEM) of the graph (a) in fig. 3, it is known that the phase of the inorganic nanoparticles is pure and free of impurities, the surface of the thin film is flat, and the thin film is completely covered without holes. From the X-ray diffraction pattern (XRD) of the pattern (B) in FIG. 3, it is clear that crystalline carbon is not present, indicating that the cracked carbon is present in an amorphous form.
FIG. 4 is TiO2X-ray photoelectron spectrum (XPS) of amorphous carbon composite film. Wherein the carbon atom percentage was 36.72%, the film was confirmed to be TiO2A composite film with C; the result shows that the long-chain organic matter coated on the surface of the nano-particles is cracked into amorphous carbon after annealing, and forms an inorganic nano-crystal/amorphous carbon hybrid inorganic charge transport material with the inorganic nano-crystal.
Experimental example 2 detection of the "photocurrent density-voltage" output characteristic curve of the perovskite solar cell of example 5
FIG. 6 is based on TiO2The curve of the output characteristic curve of the 'photocurrent density-voltage' of the all-inorganic perovskite solar cell of the electron transport layer.
The short-circuit current of the battery was 14.1mA cm-2The open circuit voltage was 1.18V, the fill factor was 0.77, and the photoelectric conversion efficiency was 12.82%. The cell area was determined to be 1cm by the optical mask2And the output light intensity of the 3A-level solar simulator is 100mW/cm2。
TABLE 1
From the characteristic curve of fig. 6 and table 1, it can be seen that: the efficiency of the control, a conventional perovskite solar cell, was 9.84%, the other active layers of the control were identical to those of example 5, and only the electron transport layer was fullerene (C)60) Material substituted for TiO2(ii) a The perovskite solar cell of the embodiment 5 of the invention is 12.82%. The description shows that the all-inorganic perovskite solar cell prepared by the embodiment can remove most of the residual organic matter long chains on the surface of the inorganic nanocrystalline while not damaging the perovskite, and the rest is in the form of amorphous carbon, so that the conductivity of the charge transport layer is improved, and the efficiency of the perovskite solar cell is greatly improved.
Experimental example 3 perovskite solar cell illumination stability and thermal stability test of example 5
Fig. 7 is the results of the light stability and thermal stability tests of the all-inorganic perovskite solar cell. The full-inorganic perovskite solar cell adopts FTO/NiO/CsPbI2Br/TiO2a/Au structure. The illumination stability test conditions are as follows: the device is not packaged, and the device is continuously illuminated at room temperature and the maximum power point in an anhydrous and oxygen-free nitrogen environment. The thermal stability test conditions were: the device is not packaged, and the device is in a water-free and oxygen-free nitrogen environment, at 85 ℃ and in a dark state.
The experimental result shows that the all-inorganic perovskite solar cell provided in example 5 has good illumination stability and thermal stability, the device efficiency keeps 90% of the initial value after illumination aging for 500 hours, the device efficiency keeps 90% of the initial value after thermal aging for 500 hours, and the practicability is greatly improved. The preparation method of the inorganic charge transport layer provided by the invention has the advantages that most of the residual organic matter long chains on the surface of the inorganic nanocrystalline are removed while the perovskite is not damaged, the rest is in an amorphous carbon form, and the chemical stability of the charge transport layer is improved, so that the efficiency and the long-term stability of the perovskite solar cell are greatly improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. The preparation method of the inorganic charge transport layer is characterized by comprising the following steps:
step 1, adding a surface modifier into nanoparticles, obtaining monodisperse inorganic nanoparticles with uniform size and containing the surface modifier by adopting a solvothermal method or a hydrothermal reaction method, and then stably dispersing the monodisperse inorganic nanoparticles in a nonpolar solvent to obtain a preparation agent; wherein the surface modifier is long alkyl chain organic amine or organic acid;
step 2, depositing the compounding agent obtained in the step 1 on a perovskite absorption layer, and carrying out high-temperature annealing on the perovskite absorption layer under the protection of inert gas to obtain an inorganic charge transmission layer of the target perovskite solar cell, wherein the inorganic charge transmission layer is an inorganic nanocrystalline/amorphous carbon hybridized composite thin film layer; the annealing temperature is 150-550 ℃.
2. The method of claim 1, wherein in step 1, when the inorganic charge transport layer is an electron transport layer, the nanoparticles are n-type semiconductors and their composite or doped compounds, including TiO2，SnO2，In2O3，ZnO，CeO2At least one of CdS, ZnS.
3. The method for preparing an inorganic charge transport layer according to claim 1, wherein in the step 1, when the inorganic charge transport layer is a hole transport layer, the nanoparticles are p-type semiconductors and their composite or doped compounds, including NiO, Cu2O，CuCrO2，CuGaO2，MoO3，WO3At least one of (1).
4. The method of preparing an inorganic charge transport layer according to claim 1, wherein the nanoparticles have a size of 1 to 50 nm.
5. The method for preparing an inorganic charge transport layer according to claim 1, wherein the non-polar solvent in step 1 comprises any one of toluene, chlorobenzene, dichlorobenzene, n-hexane and diethyl ether, and the concentration of the non-polar solvent is 5-200 mg/mL; the surface modifier comprises any one of oleic acid, stearic acid, oleylamine, dodecylamine, tetradecylamine, hexadecylamine and octadecylamine.
6. The method for producing an inorganic charge transport layer according to claim 1, wherein the inert gas in the step 2 comprises any one of argon gas and nitrogen gas; the annealing time is 1 minute to 10 hours.
7. An inorganic charge transport layer prepared according to the method of any one of claims 1 to 6.
8. The perovskite solar cell comprising the inorganic charge transport layer of claim 7, which comprises a substrate, a transparent conductive electrode, a first transport layer, a perovskite absorption layer, a second transport layer and a metal electrode, wherein the substrate, the transparent conductive electrode, the first transport layer, the perovskite absorption layer, the second transport layer and the metal electrode are sequentially arranged from bottom to top and are connected, the first transport layer and the second transport layer are respectively a hole transport layer and an electron transport layer, or the first transport layer and the second transport layer are respectively an electron transport layer and a hole transport layer, and the second transport layer is the inorganic charge transport layer of claim 7.
9. The perovskite solar cell of claim 8, wherein the first transport layer is prepared by: a formulation for use in the production method according to any one of claims 1 to 6, which is deposited on a transparent conductive electrode and annealed at a high temperature.
10. The perovskite solar cell of claim 8, wherein the perovskite absorber layer is an inorganic perovskite having the chemical formula ABX3The A, B mentioned above,The X-bit elements are inorganic chemical elements, the A-bit element is at least one of Cs, Rb and K, the B-bit element is at least one of Pb, Sn, Bi, Sr, Ca and Ba, and the X-bit element is at least one of Cl, Br and I.
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| CN114388697A (en) * | 2021-11-04 | 2022-04-22 | 上海黎元新能源科技有限公司 | Hole transport layer precursor solution and preparation method and application thereof |
| CN114702066B (en) * | 2022-03-08 | 2024-03-29 | 华能新能源股份有限公司 | Modified titanium dioxide nano-particles, preparation method thereof and perovskite solar cell |
| CN115520915A (en) * | 2022-11-02 | 2022-12-27 | 合肥工业大学 | Monodisperse nickel oxide nanocrystal with surface ligand modification and preparation method and application of electrochromic film of monodisperse nickel oxide nanocrystal |
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| CN106809872A (en) * | 2017-01-19 | 2017-06-09 | 西安交通大学 | CsPbBr with quantum size effect3The preparation method of nanometer sheet |
| CN107316942A (en) * | 2017-06-07 | 2017-11-03 | 武汉理工大学 | A kind of perovskite solar cell and preparation method thereof |
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